JP2013058729A5 - - Google Patents

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Publication number
JP2013058729A5
JP2013058729A5 JP2012103969A JP2012103969A JP2013058729A5 JP 2013058729 A5 JP2013058729 A5 JP 2013058729A5 JP 2012103969 A JP2012103969 A JP 2012103969A JP 2012103969 A JP2012103969 A JP 2012103969A JP 2013058729 A5 JP2013058729 A5 JP 2013058729A5
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JP
Japan
Prior art keywords
semiconductor layer
layer
light emitting
semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2012103969A
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English (en)
Japanese (ja)
Other versions
JP6000625B2 (ja
JP2013058729A (ja
Filing date
Publication date
Priority claimed from KR1020110090803A external-priority patent/KR101877396B1/ko
Priority claimed from KR1020110102995A external-priority patent/KR20130039353A/ko
Priority claimed from KR1020110104728A external-priority patent/KR20130040009A/ko
Priority claimed from KR1020110107683A external-priority patent/KR20130043708A/ko
Priority claimed from KR1020110123139A external-priority patent/KR101903776B1/ko
Priority claimed from KR1020110129856A external-priority patent/KR101895925B1/ko
Application filed filed Critical
Publication of JP2013058729A publication Critical patent/JP2013058729A/ja
Publication of JP2013058729A5 publication Critical patent/JP2013058729A5/ja
Publication of JP6000625B2 publication Critical patent/JP6000625B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2012103969A 2011-09-07 2012-04-27 発光素子 Active JP6000625B2 (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
KR10-2011-0090803 2011-09-07
KR1020110090803A KR101877396B1 (ko) 2011-09-07 2011-09-07 발광소자
KR10-2011-0102995 2011-10-10
KR1020110102995A KR20130039353A (ko) 2011-10-10 2011-10-10 발광소자
KR10-2011-0104728 2011-10-13
KR1020110104728A KR20130040009A (ko) 2011-10-13 2011-10-13 발광소자 패키지
KR10-2011-0107683 2011-10-20
KR1020110107683A KR20130043708A (ko) 2011-10-20 2011-10-20 발광소자
KR10-2011-0123139 2011-11-23
KR1020110123139A KR101903776B1 (ko) 2011-11-23 2011-11-23 발광소자
KR1020110129856A KR101895925B1 (ko) 2011-12-06 2011-12-06 발광소자
KR10-2011-0129856 2011-12-06

Publications (3)

Publication Number Publication Date
JP2013058729A JP2013058729A (ja) 2013-03-28
JP2013058729A5 true JP2013058729A5 (OSRAM) 2015-06-18
JP6000625B2 JP6000625B2 (ja) 2016-10-05

Family

ID=45936988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012103969A Active JP6000625B2 (ja) 2011-09-07 2012-04-27 発光素子

Country Status (5)

Country Link
US (1) US9070613B2 (OSRAM)
EP (1) EP2568503B1 (OSRAM)
JP (1) JP6000625B2 (OSRAM)
CN (1) CN102983129B (OSRAM)
TW (1) TWI543393B (OSRAM)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716723B2 (en) 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
TW201312799A (zh) * 2011-09-02 2013-03-16 李學旻 發光二極體元件
KR101925915B1 (ko) * 2011-10-24 2018-12-06 엘지이노텍 주식회사 발광소자
US8890114B2 (en) * 2012-10-16 2014-11-18 Epistar Corporation Light-emitting device
KR102087935B1 (ko) * 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
KR102024295B1 (ko) * 2013-02-05 2019-09-23 엘지이노텍 주식회사 발광 모듈
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
US9923119B2 (en) * 2013-10-01 2018-03-20 Opto Tech Corporation White LED chip and white LED packaging device
JP2015188048A (ja) * 2014-03-10 2015-10-29 株式会社東芝 窒化物半導体積層体および半導体発光素子
KR101452801B1 (ko) * 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
US20150279671A1 (en) * 2014-03-28 2015-10-01 Industry-Academic Cooperation Foundation, Yonsei University Method for forming oxide thin film and method for fabricating oxide thin film transistor employing germanium doping
KR20160033815A (ko) * 2014-09-18 2016-03-29 삼성전자주식회사 반도체 발광소자
JP6617401B2 (ja) * 2014-09-30 2019-12-11 日亜化学工業株式会社 半導体発光素子
CN104465921B (zh) * 2014-12-24 2017-06-20 中国科学院半导体研究所 电容式结构的发光二极管集成芯片及其制备方法
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
WO2016197062A1 (en) 2015-06-05 2016-12-08 Ostendo Technologies, Inc. Light emitting structures with selective carrier injection into multiple active layers
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
JP6663668B2 (ja) * 2015-09-10 2020-03-13 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
WO2017150160A1 (ja) * 2016-02-29 2017-09-08 国立大学法人京都大学 熱輻射光源
KR102528300B1 (ko) * 2016-03-10 2023-05-04 삼성디스플레이 주식회사 디스플레이 장치
TWI783385B (zh) * 2016-08-18 2022-11-11 新世紀光電股份有限公司 微型發光二極體及其製造方法
US11241678B2 (en) * 2017-05-01 2022-02-08 Iowa State University Research Foundation, Inc. Metal oxide materials made using self-assembled coordination polymers
JP6986697B2 (ja) * 2017-06-28 2021-12-22 パナソニックＩｐマネジメント株式会社 紫外線発光素子
KR101977233B1 (ko) * 2017-09-29 2019-08-28 엘지디스플레이 주식회사 반사 전극, 그 제조 방법 및 반사 전극을 포함하는 유기발광 다이오드 표시장치
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US10892296B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US10892297B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US12100696B2 (en) 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US10748881B2 (en) * 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886327B2 (en) * 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552061B2 (en) 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
CN109037291B (zh) * 2018-08-01 2020-09-01 南京大学 全色型Micro-LED器件及其制备方法
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
JP7481363B2 (ja) * 2019-05-14 2024-05-10 ソウル バイオシス カンパニー リミテッド 表示装置
US11049992B2 (en) * 2019-07-11 2021-06-29 Pix Art Imaging Inc. Dual wavelength light emitting device, dual wavelength light transceiving device and display
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
CN113764553A (zh) * 2020-06-04 2021-12-07 乂馆信息科技(上海)有限公司 一种半导体器件结构
CN115479226B (zh) * 2021-06-16 2025-08-05 重庆海尔制冷电器有限公司 用于制冷设备的显示组件
CN114744086B (zh) * 2021-12-31 2025-08-26 厦门乾照光电股份有限公司 一种发光外延结构及发光二极管芯片
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
TWI827271B (zh) * 2022-09-23 2023-12-21 國立清華大學 光電元件
KR20240141079A (ko) * 2023-03-17 2024-09-25 삼성디스플레이 주식회사 발광 소자 및 이를 구비한 표시 장치
US20240395847A1 (en) * 2023-05-26 2024-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Optoelectronic device having a photodiode including a quantum dot material
KR20250021168A (ko) * 2023-08-02 2025-02-12 삼성디스플레이 주식회사 발광 소자 및 표시 장치
CN116799618B (zh) * 2023-08-24 2023-10-31 武汉鑫威源电子科技有限公司 一种电调节垂直面发射氮化镓激光器
KR20250114762A (ko) * 2024-01-22 2025-07-29 주성엔지니어링(주) 수광 소자 및 발광소자를 포함하는 전자 소자, 및 이를 포함하는 표시 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JP3494841B2 (ja) * 1994-03-22 2004-02-09 豊田合成株式会社 ３族窒化物半導体発光素子
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
US20050127374A1 (en) * 2003-12-16 2005-06-16 Chao-Huang Lin Light-emitting device and forming method thereof
US7271420B2 (en) * 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
TWI255055B (en) * 2005-06-29 2006-05-11 Chunghwa Picture Tubes Ltd Light emitting diode and method for improving luminescence efficiency thereof
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
KR100610639B1 (ko) * 2005-07-22 2006-08-09 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
JP2007095844A (ja) * 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
JP2007149791A (ja) * 2005-11-24 2007-06-14 Univ Meijo 半導体発光素子および半導体発光素子の作成方法
DE102006046038A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
US8058663B2 (en) * 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
KR100891761B1 (ko) * 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
KR101332794B1 (ko) * 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
KR101114782B1 (ko) * 2009-12-10 2012-02-27 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
DE102009060747B4 (de) * 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
KR101925915B1 (ko) * 2011-10-24 2018-12-06 엘지이노텍 주식회사 발광소자

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