JP2013004779A - Semiconductor device and semiconductor device manufacturing method - Google Patents

Semiconductor device and semiconductor device manufacturing method Download PDF

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JP2013004779A
JP2013004779A JP2011135111A JP2011135111A JP2013004779A JP 2013004779 A JP2013004779 A JP 2013004779A JP 2011135111 A JP2011135111 A JP 2011135111A JP 2011135111 A JP2011135111 A JP 2011135111A JP 2013004779 A JP2013004779 A JP 2013004779A
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electrode pad
semiconductor device
metal layer
aluminum
bonding
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Masanobu Sueishi
政信 末石
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method which avoids damages on a semiconductor element below an electrode pad at the time of bonding by a Cu wire.SOLUTION: A semiconductor device which can be electrically connected by a bonding wire consisting primarily of copper, comprises: a semiconductor element 10; an electrode pad 20 arranged on the semiconductor element 10 and composed of a metal harder than aluminum; and a metal layer 30 arranged on the electrode pad 20 and composed of an aluminum film to which the bonding wire is connected.

Description

本発明は、ボンディングワイヤが接続される電極パッドを有する半導体装置及び半導体装置の製造方法に関する。   The present invention relates to a semiconductor device having an electrode pad to which a bonding wire is connected and a method for manufacturing the semiconductor device.

半導体装置の電気的接続を行う接続部材として、銅（Ｃｕ）を主成分とするボンディングワイヤ（以下において「Ｃｕワイヤ」という。）が用いられている。Ｃｕワイヤは、金（Ａｕ）を主成分とするＡｕワイヤに比べて安価であるという利点がある。   A bonding wire (hereinafter referred to as “Cu wire”) containing copper (Cu) as a main component is used as a connection member for electrical connection of a semiconductor device. The Cu wire is advantageous in that it is cheaper than the Au wire mainly composed of gold (Au).

このため、Ｃｕワイヤによるボンディング技術として種々の提案がなされている。例えば、硬いＣｕワイヤに対応するために、アルミニウム（Ａｌ）を主成分とする電極パッドに比較的高い割合でＣｕを添加する方法などが提案されている（例えば、特許文献１参照。）。Ａｌを主成分とする電極パッドにＣｕを添加することにより、電極パッドの硬度が高まる。これにより、電極パッドにＣｕワイヤをボンディングした時の衝撃や振動のエネルギーを効果的に受けることができる。   For this reason, various proposals have been made as bonding techniques using Cu wires. For example, in order to cope with a hard Cu wire, a method of adding Cu at a relatively high rate to an electrode pad mainly composed of aluminum (Al) has been proposed (for example, see Patent Document 1). By adding Cu to the electrode pad mainly composed of Al, the hardness of the electrode pad is increased. Thereby, it is possible to effectively receive the energy of impact and vibration when the Cu wire is bonded to the electrode pad.

特開平１−１８７８３２号公報Japanese Patent Laid-Open No. 1-187832

しかしながら、Ａｌを主成分とする電極パッドのＣｕの含有率を上げることによって、電極パッド表面のＣｕの酸化が進む。このため、ワイヤーボンディング時に新生面が出づらくなり、電極パッドとＣｕワイヤとの接合強度の低下を防ぐために接合時のパワーを上げる必要がある。その結果、硬いＣｕワイヤーによるボンディング時に、電極パッド下の半導体素子に損傷を与えるという問題があった。   However, by increasing the Cu content of the electrode pad mainly composed of Al, the oxidation of Cu on the electrode pad surface proceeds. For this reason, it becomes difficult for a new surface to appear at the time of wire bonding, and it is necessary to increase the power at the time of bonding in order to prevent a decrease in bonding strength between the electrode pad and the Cu wire. As a result, there is a problem that the semiconductor element under the electrode pad is damaged at the time of bonding with a hard Cu wire.

上記問題点に鑑み、本発明は、Ｃｕワイヤーによるボンディング時に電極パッド下の半導体素子に損傷が生じない半導体装置及び半導体装置の製造方法を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device, in which a semiconductor element under an electrode pad is not damaged during bonding with a Cu wire.

本発明の一態様によれば、銅を主成分とするボンディングワイヤによる電気的接続が可能な半導体装置であって、半導体素子と、半導体素子上に配置されたアルミニウムよりも硬い金属からなる電極パッドと、電極パッド上に配置された、ボンディングワイヤが接続されるアルミニウム膜からなる金属層とを備える半導体装置が提供される。   According to one aspect of the present invention, a semiconductor device capable of electrical connection using a bonding wire containing copper as a main component, the electrode pad comprising a semiconductor element and a metal harder than aluminum disposed on the semiconductor element And a metal layer formed on the electrode pad and made of an aluminum film to which a bonding wire is connected.

本発明の他の態様によれば、半導体素子と、記半導体素子上に配置され、アルミニウムよりも硬い金属からなる電極パッドと、電極パッド上に配置された、アルミニウムからなる金属層と、金属層の上部に形成された、銅とアルミニウムの合金層と、合金層に接続された、銅を主成分とするボンディングワイヤとを備える半導体装置が提供される。   According to another aspect of the present invention, a semiconductor element, an electrode pad disposed on the semiconductor element and made of a metal harder than aluminum, a metal layer made of aluminum and disposed on the electrode pad, and a metal layer There is provided a semiconductor device including an alloy layer of copper and aluminum formed on an upper portion of the substrate and a bonding wire mainly composed of copper connected to the alloy layer.

本発明の更に他の態様によれば、アルミニウムよりも硬い金属からなる電極パッドが表面に配置された半導体素子を準備するステップと、電極パッド上にアルミニウム膜からなる金属層を形成するステップと、金属層に銅を主成分とするボンディングワイヤを接合するステップとを含む半導体装置の製造方法が提供される。   According to still another aspect of the present invention, preparing a semiconductor element having an electrode pad made of a metal harder than aluminum disposed on the surface, forming a metal layer made of an aluminum film on the electrode pad, There is provided a method of manufacturing a semiconductor device including a step of bonding a bonding wire containing copper as a main component to a metal layer.

本発明によれば、Ｃｕワイヤーによるボンディング時に電極パッド下の半導体素子に損傷が生じない半導体装置及び半導体装置の製造方法を提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which does not damage a semiconductor element under an electrode pad at the time of bonding by Cu wire, and the manufacturing method of a semiconductor device can be provided.

本発明の実施形態に係る半導体装置の構造を示す模式図である。It is a mimetic diagram showing the structure of the semiconductor device concerning the embodiment of the present invention. 本発明の実施形態に係る半導体装置のボンディング後の構造を示す模式図である。It is a mimetic diagram showing structure after bonding of a semiconductor device concerning an embodiment of the present invention.

次に、図面を参照して、本発明の実施形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであり、各部の厚みの比率等は現実のものとは異なることに留意すべきである。したがって、具体的な厚みや寸法は以下の説明を参酌して判断すべきものである。又、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることはもちろんである。   Next, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of thicknesses of the respective parts are different from actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

又、以下に示す実施形態は、この発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の実施形態は、構成部品の材質、形状、構造、配置等を下記のものに特定するものでない。この発明の実施形態は、特許請求の範囲において、種々の変更を加えることができる。   Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, arrangement, etc. of the component parts. Is not specified as follows. The embodiment of the present invention can be variously modified within the scope of the claims.

本発明の実施形態に係る半導体装置１は、Ｃｕを主成分とするボンディングワイヤによる電気的接続が可能な半導体装置である。半導体装置１は、図１に示すように、半導体素子１０と、半導体素子１０上に配置された、Ａｌよりも硬い金属からなる電極パッド２０と、電極パッド２０上に配置された、ボンディングワイヤが接続されるＡｌ膜からなる金属層３０とを備える。   A semiconductor device 1 according to an embodiment of the present invention is a semiconductor device that can be electrically connected by a bonding wire containing Cu as a main component. As shown in FIG. 1, the semiconductor device 1 includes a semiconductor element 10, an electrode pad 20 made of a metal harder than Al, disposed on the semiconductor element 10, and a bonding wire disposed on the electrode pad 20. And a metal layer 30 made of an Al film to be connected.

半導体素子１０は、半導体基板上に各種の半導体層や絶縁膜を積層した積層体１１からなり、図示を省略する電極や配線層を有する。積層体１１の上面には、絶縁膜１２が配置されている。電極パッド２０は、絶縁膜１２に設けられた開口部（図示略）において、半導体素子１０の電極や配線層と電気的に接続している。絶縁膜１２は、例えば酸化シリコン（ＳｉＯ2）膜、窒化シリコン（ＳｉＮ）膜、ポリミド膜などである。 The semiconductor element 10 includes a stacked body 11 in which various semiconductor layers and insulating films are stacked on a semiconductor substrate, and includes an electrode and a wiring layer (not shown). An insulating film 12 is disposed on the upper surface of the stacked body 11. The electrode pad 20 is electrically connected to an electrode and a wiring layer of the semiconductor element 10 in an opening (not shown) provided in the insulating film 12. The insulating film 12 is, for example, a silicon oxide (SiO 2 ) film, a silicon nitride (SiN) film, a polyimide film, or the like.

電極パッド２０は、例えば、Ａｌを主成分とし且つＣｕを含有する金属からなる。このとき、電極パッド２０における銅の含有率は、例えば０．３〜５．０重量％程度である。電極パッド２０の膜厚は、例えば１μｍ〜２μｍ程度である。   The electrode pad 20 is made of, for example, a metal containing Al as a main component and Cu. At this time, the copper content in the electrode pad 20 is, for example, about 0.3 to 5.0% by weight. The film thickness of the electrode pad 20 is, for example, about 1 μm to 2 μm.

金属層３０は、９９．９９重量％以上のＡｌ膜である。金属層３０の膜厚は、１μｍ〜５μｍ程度、好ましくは３μｍ〜５μｍ程度である。金属層３０の膜厚が３μｍ以上であれば、通常、金属層３０にＣｕワイヤをボンディングした後も電極パッド２０上に金属層３０が残った状態になる。   The metal layer 30 is an Al film of 99.99% by weight or more. The film thickness of the metal layer 30 is about 1 μm to 5 μm, preferably about 3 μm to 5 μm. If the film thickness of the metal layer 30 is 3 μm or more, the metal layer 30 usually remains on the electrode pad 20 even after the Cu wire is bonded to the metal layer 30.

図１に示した半導体装置１にボンディングワイヤ４０を接合した例を、図２に示す。ボンディングワイヤ４０は、Ｃｕを主成分とするＣｕワイヤである。   An example in which the bonding wire 40 is bonded to the semiconductor device 1 shown in FIG. 1 is shown in FIG. The bonding wire 40 is a Cu wire containing Cu as a main component.

ボンディングワイヤ４０は、例えば超音波ボンディングによって金属層３０に接合される。超音波によってボンディングワイヤ４０と金属層３０の表面が擦り合わされて、新生面がそれぞれ生成される。これらの新生面同士が密着することによって異種金属間の凝着が進行し、ボンディングワイヤ４０と金属層３０が接合される。このとき、金属層３０の上部のＡｌがボンディングワイヤ４０のＣｕと反応して、ＡｌとＣｕの合金層３５が形成される。   The bonding wire 40 is bonded to the metal layer 30 by, for example, ultrasonic bonding. The surfaces of the bonding wire 40 and the metal layer 30 are rubbed with each other by ultrasonic waves, and new surfaces are generated. When these new surfaces are brought into close contact with each other, adhesion between dissimilar metals proceeds, and the bonding wire 40 and the metal layer 30 are joined. At this time, Al on the upper part of the metal layer 30 reacts with Cu of the bonding wire 40 to form an alloy layer 35 of Al and Cu.

その結果、図２に示すように、ボンディングワイヤ４０が接合された半導体装置１は、半導体素子１０、電極パッド２０、Ａｌ膜からなる金属層３０、及びＡｌとＣｕの合金層３５が積層された構造である。合金層３５にボンディングワイヤ４０が接続されている。   As a result, as shown in FIG. 2, the semiconductor device 1 to which the bonding wire 40 is bonded has the semiconductor element 10, the electrode pad 20, the metal layer 30 made of an Al film, and the alloy layer 35 of Al and Cu laminated. Structure. A bonding wire 40 is connected to the alloy layer 35.

ボンディングワイヤ４０は、電極パッド２０と半導体装置１のインナーリードとを電気的に接続するワイヤとしても、電極パッド２０と半導体装置１を搭載するプリント基板上の配線パターンとを電気的に接続するワイヤとしても使用される。   The bonding wire 40 is a wire that electrically connects the electrode pad 20 and the inner lead of the semiconductor device 1 or a wire that electrically connects the electrode pad 20 and the wiring pattern on the printed circuit board on which the semiconductor device 1 is mounted. Also used as

半導体装置１では、電極パッド２０上に金属層３０を配置することにより、電極パッド２０の表面が露出しない。このため、電極パッド２０表面のＣｕの酸化を防止できる。   In the semiconductor device 1, the surface of the electrode pad 20 is not exposed by disposing the metal layer 30 on the electrode pad 20. For this reason, oxidation of Cu on the surface of the electrode pad 20 can be prevented.

Ｃｕワイヤであるボンディングワイヤ４０は硬いため、ボンディングワイヤ４０を電極パッド２０に接合するときに、電極パッド２０下の半導体素子１０に損傷を与えるおそれがある。   Since the bonding wire 40 which is a Cu wire is hard, there is a possibility that the semiconductor element 10 under the electrode pad 20 may be damaged when the bonding wire 40 is bonded to the electrode pad 20.

しかし、半導体装置１では、電極パッド２０上に配置された金属層３０が電極パッド２０よりも柔らかい。このため、金属層３０によってボンディング時の衝撃が緩衝され、ボンディング時における電極パッド２０下方の絶縁膜１２の損傷を抑制できる。   However, in the semiconductor device 1, the metal layer 30 disposed on the electrode pad 20 is softer than the electrode pad 20. For this reason, the impact at the time of bonding is buffered by the metal layer 30, and damage to the insulating film 12 below the electrode pad 20 at the time of bonding can be suppressed.

また、電極パッド２０のＣｕ含有率が高いと、ダイス工程時に水と反応して電極パッド２０にピンホールが発生するコロージョンによって接合面積が減少し、ワイヤーボンディングの接合強度が低下する問題がある。しかし、半導体装置１では、電極パッド２０上に金属層３０が配置されているため、電極パッド２０表面でのピンホール発生が防止される。このため、接合強度を高く維持できる。   In addition, when the Cu content of the electrode pad 20 is high, there is a problem that the bonding area is reduced due to the corrosion that reacts with water during the dicing process and pinholes are generated in the electrode pad 20, and the bonding strength of wire bonding is reduced. However, in the semiconductor device 1, since the metal layer 30 is disposed on the electrode pad 20, generation of pin holes on the surface of the electrode pad 20 is prevented. For this reason, the bonding strength can be maintained high.

したがって、半導体装置１では、電極パッド２０上にＡｌ膜からなる金属層３０を配置することにより、電極パッド２０にＣｕワイヤを直接接合する場合と比べて、ワイヤーボンディング条件を緩和することができる。例えば、ボンディング時の加重を大きくし、超音波のエネルギーを小さくできる。これにより、半導体素子１０の受けるダメージを小さくできる。   Therefore, in the semiconductor device 1, by arranging the metal layer 30 made of the Al film on the electrode pad 20, the wire bonding conditions can be relaxed compared to the case where the Cu wire is directly bonded to the electrode pad 20. For example, it is possible to increase the weight during bonding and reduce the energy of ultrasonic waves. Thereby, the damage which the semiconductor element 10 receives can be made small.

上記のようにワイヤーボンディング条件を緩和することができるため、半導体装置１の製造が容易になる。   Since the wire bonding conditions can be relaxed as described above, the semiconductor device 1 can be easily manufactured.

以上に説明したように、本発明の実施形態に係る半導体装置１では、Ａｌよりも硬い金属からなる電極パッド２０上にＡｌ膜からなる金属層３０が配置され、金属層３０にＣｕワイヤであるボンディングワイヤ４０が接合される。金属層３０によってボンディング時の衝撃が緩衝されるため、半導体装置１によれば、ボンディング時に電極パッド２０下方の半導体素子１０に損傷が生じない半導体装置を提供することができる。   As described above, in the semiconductor device 1 according to the embodiment of the present invention, the metal layer 30 made of an Al film is disposed on the electrode pad 20 made of a metal harder than Al, and the metal layer 30 is a Cu wire. Bonding wire 40 is joined. Since the impact during bonding is buffered by the metal layer 30, the semiconductor device 1 can provide a semiconductor device in which the semiconductor element 10 below the electrode pad 20 is not damaged during bonding.

（その他の実施形態）
上記のように本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As described above, the present invention has been described according to the embodiments. However, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

既に述べた実施形態の説明においては、電極パッド２０の材料がＡｌとＣｕである場合を例示的に説明したが、Ａｌを主成分とし且つＣｕを含有するのであれば、電極パッド２０の材料はこれに限られない。例えば、Ａｌを主成分とし、Ｃｕの含有率が０．３〜５．０重量％であり、且つシリコン（Ｓｉ）を含有させた電極パッド２０であってもよい。   In the description of the embodiment already described, the case where the material of the electrode pad 20 is Al and Cu has been described as an example. However, if the material is mainly composed of Al and contains Cu, the material of the electrode pad 20 is It is not limited to this. For example, the electrode pad 20 which has Al as a main component, Cu content of 0.3 to 5.0 wt%, and silicon (Si) may be used.

また、本発明の実施形態は、半導体素子（半導体素子の電極パッドと半導体素子の金属層を含む）とワイヤを樹脂で覆った樹脂封止型半導体装置として適応することができる。例えば、樹脂はエポキシ樹脂、ハロゲンフリー樹脂を使用することができる。   The embodiment of the present invention can be applied as a resin-encapsulated semiconductor device in which a semiconductor element (including an electrode pad of a semiconductor element and a metal layer of the semiconductor element) and a wire are covered with a resin. For example, an epoxy resin or a halogen-free resin can be used as the resin.

また、ボンディングワイヤ４０に、酸化防止のために金属めっきを被覆したワイヤも採用可能である。例えば、ボンディングワイヤ４０にパラジウム（Ｐｄ）めっきＣｕワイヤを使用することができる。   Moreover, the wire which coat | covered the metal plating for the oxidation prevention to the bonding wire 40 is also employable. For example, palladium (Pd) plated Cu wire can be used for the bonding wire 40.

このように、本発明はここでは記載していない様々な実施形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。   As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

１…半導体装置
１０…半導体素子
１１…積層体
１２…絶縁膜
２０…電極パッド
３０…金属層
３５…合金層
４０…ボンディングワイヤ DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 10 ... Semiconductor element 11 ... Laminated body 12 ... Insulating film 20 ... Electrode pad 30 ... Metal layer 35 ... Alloy layer 40 ... Bonding wire

Claims (7)

銅を主成分とするボンディングワイヤによる電気的接続が可能な半導体装置であって、
半導体素子と、
前記半導体素子上に配置された、アルミニウムよりも硬い金属からなる電極パッドと、
前記電極パッド上に配置された、前記ボンディングワイヤが接続されるアルミニウム膜からなる金属層と
を備えることを特徴とする半導体装置。 A semiconductor device capable of electrical connection by a bonding wire mainly composed of copper,
A semiconductor element;
An electrode pad made of a metal harder than aluminum, disposed on the semiconductor element;
And a metal layer made of an aluminum film disposed on the electrode pad and connected to the bonding wire. 半導体素子と、
前記半導体素子上に配置され、アルミニウムよりも硬い金属からなる電極パッドと、
前記電極パッド上に配置された、アルミニウムからなる金属層と、
前記金属層の上部に形成された、銅とアルミニウムの合金層と、
前記合金層に接続された、銅を主成分とするボンディングワイヤと
を備えることを特徴とする半導体装置。 A semiconductor element;
An electrode pad disposed on the semiconductor element and made of a metal harder than aluminum;
A metal layer made of aluminum and disposed on the electrode pad;
An alloy layer of copper and aluminum formed on the metal layer;
A semiconductor device comprising: a bonding wire mainly composed of copper connected to the alloy layer. 前記電極パッドが、アルミニウムを主成分とし且つ銅を含有することを特徴とする請求項１又は２に記載の半導体装置。   The semiconductor device according to claim 1, wherein the electrode pad contains aluminum as a main component and copper. 前記電極パッドにおける銅の含有率が０．３〜５．０重量％であることを特徴とする請求項３に記載の半導体装置。   4. The semiconductor device according to claim 3, wherein the copper content in the electrode pad is 0.3 to 5.0% by weight. アルミニウムよりも硬い金属からなる電極パッドが表面に配置された半導体素子を準備するステップと、
前記電極パッド上にアルミニウム膜からなる金属層を形成するステップと、
前記金属層に銅を主成分とするボンディングワイヤを接合するステップと
を含むことを特徴とする半導体装置の製造方法。 Preparing a semiconductor element having an electrode pad made of a metal harder than aluminum disposed on the surface;
Forming a metal layer made of an aluminum film on the electrode pad;
Bonding a bonding wire containing copper as a main component to the metal layer. A method for manufacturing a semiconductor device, comprising: 前記金属層の上部のアルミニウムと前記ボンディングワイヤに含まれる銅とを反応させて、銅とアルミニウムの合金層を形成することを特徴とする請求項５に記載の半導体装置の製造方法。   6. The method of manufacturing a semiconductor device according to claim 5, wherein an aluminum layer above the metal layer is reacted with copper contained in the bonding wire to form an alloy layer of copper and aluminum. 超音波ボンディングによって前記金属層に前記ボンディングワイヤを接合することを特徴とする請求項５又は６に記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to claim 5, wherein the bonding wire is bonded to the metal layer by ultrasonic bonding.
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