JP2014157868A - Method of manufacturing semiconductor device by using bonding tool - Google Patents

Method of manufacturing semiconductor device by using bonding tool Download PDF

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JP2014157868A
JP2014157868A JP2013026769A JP2013026769A JP2014157868A JP 2014157868 A JP2014157868 A JP 2014157868A JP 2013026769 A JP2013026769 A JP 2013026769A JP 2013026769 A JP2013026769 A JP 2013026769A JP 2014157868 A JP2014157868 A JP 2014157868A
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copper wire
tool
bonding
aluminum
electrode
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JP6121741B2 (en
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Yoshio Fujii
芳雄 藤井
Shinji Hara
慎治 原
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To enable such manufacture that a sufficient ultrasonic energy is applied to a junction part while preventing a tool front end from being contacted with an electrode surface of a semiconductor element.SOLUTION: For example, in the case that a copper wire is bonded to an electrode configured by forming an aluminum layer on a titanium layer by a bonding tool 10 while giving ultrasonic vibration, grooves 11b and 12b extending in an ultrasonic vibration direction are provided at central parts of tool front ends 11 and 12, and one central convex part 14 or recessed part 15 is formed in each of these grooves 11b and 12b. By using a bonding tool 10 obtained by making upper surfaces of the central convex part 14 or convex part 16 flat, bonding by ultrasonic vibration is performed while making the tool front end 11, 12 bite the copper wire. Thereby, pure aluminum is raked out from the junction part to form a copper-aluminum compound between the electrode, the titanium layer, and the copper wire.

Description

本発明は半導体装置の製造方法、特に銅太線をボンディングツールにより半導体素子の電極に接合するための半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device for bonding a copper thick wire to an electrode of a semiconductor element using a bonding tool.

従来から、半導体装置における半導体素子とリード線や回路基板との間の配線は、アルミニウム線を用いたワイヤボンディングで行われており、半導体素子の電極表面に形成されたアルミニウムや金の材料に対してアルミニウム線が接合・接続される。   Conventionally, wiring between a semiconductor element and a lead wire or a circuit board in a semiconductor device has been performed by wire bonding using an aluminum wire, and the aluminum or gold material formed on the electrode surface of the semiconductor element is used. Aluminum wires are joined and connected.

一方、近年では、熱伝導率、電気伝導率等において有利となる銅線を用いてワイヤボンディングすることが提案され、半導体素子の電極表面に形成されたアルミニウム材や銅材に対して銅線を接続することが行われる。一般に、この銅線には径（直径）７５μｍ以下の細径線と径７５μｍ以上の太径線があり、細径線の場合はボールボンディング技術によって配線され、太径線の場合はウエッジボンディング技術によって接合される。   On the other hand, in recent years, it has been proposed that wire bonding is performed using a copper wire that is advantageous in terms of thermal conductivity, electrical conductivity, etc., and the copper wire is attached to the aluminum material or copper material formed on the electrode surface of the semiconductor element. Connecting is done. In general, this copper wire has a thin wire having a diameter (diameter) of 75 μm or less and a thick wire having a diameter of 75 μm or more. Joined by.

このウエッジボンディングに使用されるツールはウエッジツールと言われ、一般的にツール先端は、図２（Ｂ）のように９０度前後の角度の開口を持つ形状（ツール先端１）となっている。そして、ワイヤボンディングでは、このツール先端で銅線を電極に圧接しかつ超音波振動を与えることで、銅線が半導体素子の電極に接合され、結線される。   A tool used for the wedge bonding is called a wedge tool, and generally, the tool tip has a shape having an opening of about 90 degrees (tool tip 1) as shown in FIG. 2B. In wire bonding, the copper wire is bonded to and connected to the electrode of the semiconductor element by pressing the copper wire to the electrode at the tool tip and applying ultrasonic vibration.

特開２０１２−１５２６３号公報JP 2012-15263 A

しかしながら、超音波振動を利用した製造方法で径７５μｍ以上の銅線をウエッジボンディングする場合、銅線の材料特性とワイヤボンディング条件によっては、ツール先端が半導体素子の電極表面に接触し、接合部への超音波エネルギーを阻害することとなり、未接合を発生させるという問題点があった。   However, when a copper wire having a diameter of 75 μm or more is wedge-bonded by a manufacturing method using ultrasonic vibration, depending on the material characteristics of the copper wire and the wire bonding conditions, the tip of the tool comes into contact with the electrode surface of the semiconductor element and goes to the joint. In this case, the ultrasonic energy is hindered and unbonded.

一般的に使用されているアルミニウム線のウエッジボンディングの場合は、接合部に超音波エネルギーを印加した際、アルミニウム線が接合部から広がりツール先端下にアルミニウムが配置されるので、ツール先端がアルミニウム線に接触することはなかった。ところが、銅線のウエッジボンディングの場合、接合部に超音波エネルギーを印加しても銅線は接合部から広がらず、ツール先端下に銅が適切に配置されない。この結果、ツール先端が半導体素子の電極表面に接触し、超音波（振動）エネルギーによる接合が良好に行われなかった。   In the case of wedge bonding of commonly used aluminum wire, when ultrasonic energy is applied to the joint, the aluminum wire spreads from the joint and aluminum is placed under the tool tip. There was no contact. However, in the case of wedge bonding of a copper wire, even if ultrasonic energy is applied to the joint portion, the copper wire does not spread from the joint portion, and copper is not properly disposed below the tool tip. As a result, the tip of the tool was in contact with the electrode surface of the semiconductor element, and bonding with ultrasonic (vibration) energy was not performed well.

この問題点の対策として、例えばツール先端を削ったり、図２（Ｂ）のツール先端１の開口角度を広げたりすることで、半導体素子電極面とツールの距離を広げ、ツール先端と電極表面との接触を防ぐ方法が行われるが、この場合には、接合部に十分な超音波エネルギーを印加することができないという問題がある。   As a countermeasure for this problem, for example, by cutting the tool tip or widening the opening angle of the tool tip 1 in FIG. 2B, the distance between the semiconductor element electrode surface and the tool is increased, and the tool tip and electrode surface In this case, there is a problem that sufficient ultrasonic energy cannot be applied to the joint.

一方、銅線の硬度を上げることで、銅線の変形を最小限とし、ツール先端と電極表面との接触を防ぐ方法もあるが、この場合、半導体素子へのダメージの懸念が大きくなる。   On the other hand, there is a method of increasing the hardness of the copper wire to minimize the deformation of the copper wire and preventing the contact between the tool tip and the electrode surface. In this case, however, the risk of damage to the semiconductor element increases.

また、本出願人は、銅太線のワイヤボンディングにおいて、半導体素子の電極として例えばチタン層の上にアルミニウム層を形成し、チタン層と銅線（ワイヤ）との間に、銅−アルミニウム化合物を形成することで、強固な接合強度、高耐熱化を図ることを提案している。しかし、この場合でも、超音波エネルギーが十分に与えられない結果、銅線とチタン層（アルミニウム下層）との間にピュアなアルミニウムが残り、良好な接合状態が得られないという不都合があった。   In addition, the present applicant forms, for example, an aluminum layer on a titanium layer as an electrode of a semiconductor element in copper thick wire bonding, and forms a copper-aluminum compound between the titanium layer and the copper wire (wire). By doing so, it has been proposed to achieve strong bonding strength and high heat resistance. However, even in this case, the ultrasonic energy is not sufficiently applied, and as a result, pure aluminum remains between the copper wire and the titanium layer (aluminum lower layer), and there is a disadvantage that a good bonded state cannot be obtained.

本発明は上記問題点に鑑みてなされたものであり、その目的は、ツール先端が半導体素子の電極表面に接触することなく、接合部に十分な超音波エネルギーを印加した製造が可能となり、銅太線においても強固な接合ができるボンディングツールを用いた半導体装置の製造方法を提供することにある。   The present invention has been made in view of the above-mentioned problems, and the object thereof is to enable manufacture in which a sufficient ultrasonic energy is applied to the joint without the tool tip being in contact with the electrode surface of the semiconductor element. An object of the present invention is to provide a method of manufacturing a semiconductor device using a bonding tool capable of strong bonding even with a thick line.

上記目的を達成するために、請求項１に係る発明は、表面に所定の金属層を形成した電極に対し、超音波振動を与えながら銅線をボンディングツールにより接合する半導体装置の製造方法において、上記ツール先端の中央部に超音波振動方向に長くなる溝を設けたボンディングツールを用い、このボンディングツールの溝を上記銅線に食い付かせながらこの溝の長手方向に沿って超音波振動を与えることを特徴とする。
請求項２に係る発明は、上記電極表面の金属層をアルミニウム層とし、このアルミニウム層中のアルミニウムを接合部外へ掻き出しながら上記銅線と上記電極のアルミニウム下層の金属との間に、銅−アルミニウム化合物を形成したことを特徴とする。 In order to achieve the above object, an invention according to claim 1 is a method of manufacturing a semiconductor device in which a copper wire is bonded by a bonding tool while applying ultrasonic vibration to an electrode having a predetermined metal layer formed on a surface thereof. A bonding tool having a groove extending in the ultrasonic vibration direction at the center of the tool tip is used, and ultrasonic vibration is applied along the longitudinal direction of the groove while the groove of the bonding tool bites the copper wire. It is characterized by that.
According to a second aspect of the present invention, an aluminum layer is used as the metal layer on the surface of the electrode, and a copper- An aluminum compound is formed.

本発明の構成によれば、超音波振動方向に沿った溝を持つツール先端が銅線に食い付くように圧接され、この状態で超音波振動を与えることで、溝部分から接合部に超音波エネルギーが十分に印加されることになり、例えば電極上面のピュアなアルミニュウムが溝の長手方向の両端から接合部外へ掻き出され、銅−アルミニウム化合物が形成されることで、銅線（ワイヤ）は半導体素子電極に強固に接合される。   According to the configuration of the present invention, the tool tip having a groove along the ultrasonic vibration direction is pressed so as to bite into the copper wire, and in this state, ultrasonic vibration is applied from the groove portion to the joint. Enough energy is applied, for example, pure aluminum on the upper surface of the electrode is scraped out of the joint from both ends in the longitudinal direction of the groove to form a copper-aluminum compound, thereby forming a copper wire (wire) Is firmly bonded to the semiconductor element electrode.

本発明のボンディングツールを用いた半導体装置の製造方法によれば、ツール先端が半導体素子の電極表面に接触することなく、接合部に十分な超音波エネルギーを印加した製造ができ、特に径７５μｍ以上の太線において、強固な接合、結線が可能となる。また、銅線の材料特性によらず、ボンディングできることから、半導体素子へのダメージのリスクも減らすことができ、銅線材料硬度の選定の必要がない。   According to the method for manufacturing a semiconductor device using the bonding tool of the present invention, it is possible to manufacture the semiconductor device by applying sufficient ultrasonic energy to the joint without contacting the tip of the tool to the electrode surface of the semiconductor element. In this thick line, strong bonding and connection are possible. Further, since bonding can be performed regardless of the material characteristics of the copper wire, the risk of damage to the semiconductor element can be reduced, and there is no need to select the copper wire material hardness.

請求項２の発明のように、表面にアルミニウム層を有する電極に銅線を接合する場合では、径７５μｍ以上の銅太線であっても、接合領域にピュアなアルミニウムを残すことなく、銅線とアルミニウム下層金属との間に、アルミニウムと銅の金属間化合物が良好に形成され、強固な接合強度、高耐熱化が得られるという利点がある。   In the case of joining a copper wire to an electrode having an aluminum layer on the surface as in the invention of claim 2, even if the copper wire has a diameter of 75 μm or more, the copper wire and the copper wire are not left in the joining region. There is an advantage that an intermetallic compound of aluminum and copper is formed favorably between the aluminum lower layer metal and strong bonding strength and high heat resistance can be obtained.

本発明の実施例に係る半導体装置の製造方法で用いられるボンディングツールの構成を示し、図（Ａ）はツール先端の第１例の構成図［（ａ）は先端面、（ｂ）は側面］、図（Ｂ）はツール先端の第２例の構成図［（ａ）は先端面、（ｂ）は側面］、図（Ｃ）はボンディングツールの先端側の一部を示す斜視図である。The structure of the bonding tool used with the manufacturing method of the semiconductor device which concerns on the Example of this invention is shown, FIG. (A) is a block diagram of the 1st example of a tool front-end | tip ((a) is a front end surface, (b) is a side surface). (B) is a block diagram of a second example of the tool tip [(a) is the tip surface, (b) is a side surface], and FIG. (C) is a perspective view showing a part of the tip side of the bonding tool. 実施例と従来のツール先端の相違を説明するもので、図（Ａ）は、図１（Ｂ）の第２例におけるツール先端の断面を示す図、図（Ｂ）は、従来のツール先端の断面図である。The difference between the embodiment and the conventional tool tip will be described. FIG. (A) is a diagram showing a cross section of the tool tip in the second example of FIG. 1 (B), and FIG. It is sectional drawing. 実施例のボンディングツールで銅線を電極に接合する時のイメージを示し、図（Ａ）は、ツール先端の第１例を用いた場合の図、図（Ｂ）は、ツール先端の第２例を用いた場合の図である。The image at the time of joining a copper wire to an electrode with the bonding tool of an example is shown, Drawing (A) is a figure at the time of using the 1st example of a tool tip, and Drawing (B) is the 2nd example of a tool tip. It is a figure at the time of using. 実施例の半導体装置の製造方法における接合部の断面構成を示す図である。It is a figure which shows the cross-sectional structure of the junction part in the manufacturing method of the semiconductor device of an Example. ツール先端がワッフルタイプとなるボンディングツールを用いた場合を説明したもので、図（Ａ）はツール先端の構成図、図（Ｂ）は接合時のイメージ図、図（Ｃ）は接合部の断面構成図である。Explains the case where a bonding tool with a waffle tip is used. FIG. (A) is a configuration diagram of the tool tip, FIG. (B) is an image diagram at the time of bonding, and FIG. (C) is a sectional configuration of the bonding portion. FIG.

図１は、実施例で用いられるボンディングツールの構成であり、図１（Ａ），（Ｂ）には、図１（Ｃ）のボンディングツール（ウエッジツール）１０のツール先端（面）１１（第１例），１２（第２例）が示されている。図１（Ａ）の第１例のツール先端１１は、両端（縁）に端側凸部（土手部）１１ａが設けられることで、その中央部に超音波印加による振動方向５０に沿って長くなる溝１１ｂが形成される。また、この溝１１ｂの中には、上面が平面となる１つの凸部１４（その他は凹部となる）が設けられる。即ち、ツール先端１１は、両端の端側凸部１１ａが最も隆起し、超音波振動方向５０に沿った溝１１ｂ内には中央凸部１４を有し、この溝１１ｂの長手方向の端部は開放される。上記溝１１ｂは、ボンディングされる銅線（金属ワイヤ）に食い付いてこの銅線をしっかり把持、固定する役目をし、また中央凸部１４も、銅線への食い付きを補強し向上させる役目をする。   FIG. 1 shows a configuration of a bonding tool used in the embodiment. FIGS. 1A and 1B show a tool tip (surface) 11 (first) of a bonding tool (wedge tool) 10 in FIG. 1 example) and 12 (second example) are shown. The tool tip 11 of the first example shown in FIG. 1A is provided with end-side convex portions (bank portions) 11a at both ends (edges), so that the central portion is elongated along the vibration direction 50 by applying ultrasonic waves. A groove 11b is formed. Further, in the groove 11b, one convex portion 14 (the other is a concave portion) whose upper surface is a flat surface is provided. That is, the tool tip 11 has the most protruding end-side convex portions 11a at both ends, and has a central convex portion 14 in the groove 11b along the ultrasonic vibration direction 50. The longitudinal end portion of the groove 11b is Opened. The groove 11b bites into a copper wire (metal wire) to be bonded and firmly holds and fixes the copper wire, and the central protrusion 14 also serves to reinforce and improve the biting of the copper wire. do.

図１（Ｂ）の第２例のツール先端１２でも、両端に端側凸部（土手部）１２ａが設けられることで、その中央部に超音波振動方向５０に沿って長くなる溝１２ｂが形成され、この溝１１ｂの中には、凹部１５が形成されることで、上面が平面となる２つの凸部１６が設けられる。即ち、ツール先端１２は、両端の端側凸部１２ａが最も隆起し、超音波振動方向５０に沿った溝１２ｂ内には２つの凸部１６を有し、この溝１２ｂの長手方向の端部は開放される。この溝１２ｂにおいても、ボンディングされる銅線に食い付いてこの銅線をしっかり把持、固定する役目をし、また凹部１５も銅線への食い付きを補強し向上させる役目をする。   Also in the tool tip 12 of the second example of FIG. 1B, the end-side convex portion (bank portion) 12a is provided at both ends, so that a groove 12b that is elongated along the ultrasonic vibration direction 50 is formed at the center portion. In the groove 11b, the concave portion 15 is formed, so that two convex portions 16 having a flat upper surface are provided. That is, the end 12 of the tool tip protrudes most at the end 12 of the tool, and has two protrusions 16 in the groove 12b along the ultrasonic vibration direction 50, and the end of the groove 12b in the longitudinal direction. Is released. The groove 12b also works to bite and fix the copper wire firmly by being bonded to the bonded copper wire, and the concave portion 15 also serves to reinforce and improve the biting of the copper wire.

図２（Ａ）には、図１（Ｂ）のツール先端を振動方向５０から見た断面が示されており、実施例では、このツール先端１２のように、溝１２ｂ内における銅線を圧接する先端面を平面とすることが好ましく、図１（Ａ）においては、凸部１４の上面を平面とし、図１（Ｂ）においては、凸部１６の上面を平面とすることで、超音波振動（エネルギー）が所望の範囲においてシンプルな形で効率良く接合部へ印加されるようにしている。即ち、図２（Ｂ）に示されるように、従来において径７５μｍ以上のアルミニウム線を結線する際に使用されるボンディングツールのツール先端１では、９０度前後の角度で開口し、隅部（縁部）が尖った形状とされているが、このような形状の場合、ツール先端１の下に銅が配置されないため、接合部に十分な超音波エネルギーを印加することができない。   FIG. 2A shows a cross section of the tool tip of FIG. 1B as viewed from the vibration direction 50. In the embodiment, the copper wire in the groove 12b is press-contacted like the tool tip 12 as shown in FIG. It is preferable that the leading end surface is a flat surface. In FIG. 1A, the upper surface of the convex portion 14 is a flat surface, and in FIG. 1B, the upper surface of the convex portion 16 is a flat surface. Vibration (energy) is efficiently applied to the joint in a simple manner within a desired range. That is, as shown in FIG. 2 (B), the tool tip 1 of a bonding tool conventionally used for connecting an aluminum wire having a diameter of 75 μm or more is opened at an angle of about 90 degrees, and the corner (edge) However, in such a shape, copper is not disposed under the tool tip 1, so that sufficient ultrasonic energy cannot be applied to the joint.

そこで、実施例では、ツール先端１１，１２において、溝１１ｂ，１２ｂを銅線に食い付かせると共に、銅線を主に押える面、即ち凸部１４，１６を平面とすることで、このツール先端１１，１２から超音波振動を接合部へ良好に伝達するようにしている。   Therefore, in the embodiment, the tool tips 11 and 12 are made to bite the grooves 11b and 12b on the copper wire, and the surface that mainly presses the copper wire, that is, the convex portions 14 and 16 are made flat, so that the tool tip The ultrasonic vibrations from 11 and 12 are satisfactorily transmitted to the joint.

図３には、実施例のボンディングツール［図（Ａ）は第１例、図（Ｂ）は第２例］で銅線１８を電極１９に接合する時（銅線中央部）の状態が示されており、第１例のツール先端１１の場合は、溝１１ｂが銅線１８に食い付くと共に、図３（Ａ）に示されるように、凸部１４にて溝Ｇａを作ることで、銅線１８に食い付き、主にこの溝Ｇａ（凸部１４）から接合部に超音波を与えることができる。第２例のツール先端１２の場合は、溝１２ｂが銅線１８に食い付くと共に、図３（Ｂ）に示されるように、凹部１５にて凸部Ｇｂを作ることで、銅線１８に食い付き、主にこの凸部Ｇｂの両側（凸部１６）から接合部に超音波を与えることができる。   FIG. 3 shows a state when the copper wire 18 is joined to the electrode 19 (center portion of the copper wire) in the bonding tool of the embodiment [FIG. (A) is the first example, FIG. (B) is the second example]. In the case of the tool tip 11 of the first example, the groove 11b bites the copper wire 18 and, as shown in FIG. The wire 18 can be bitten and ultrasonic waves can be given to the joint mainly from the groove Ga (convex portion 14). In the case of the tool tip 12 of the second example, the groove 12b bites into the copper wire 18 and, as shown in FIG. In addition, ultrasonic waves can be applied to the joint mainly from both sides (convex portion 16) of the convex portion Gb.

このような実施例によれば、ツール先端１１，１２で銅線１８を確実に圧接しながら、超音波振動を溝１１ｂ，１２ｂの長手方向に沿って与える（振動方向５０と溝の長手方向を一致させる）ことで、超音波振動を接合部に対し効率良く十分に供給することができ、銅線１８が電極１９に強固な状態で接合される。例えば、電極の上面金属と銅線との化合物を形成する場合には、上面のピュアな金属を接合部の外（振動方向５０の外側）へ掻き出しながら、上面金属と銅線の化合物を形成することができる。   According to such an embodiment, the ultrasonic vibration is applied along the longitudinal direction of the grooves 11b and 12b while the copper wire 18 is reliably pressed by the tool tips 11 and 12 (the vibration direction 50 and the longitudinal direction of the groove are defined). The ultrasonic vibrations can be efficiently and sufficiently supplied to the bonding portion, and the copper wire 18 is bonded to the electrode 19 in a strong state. For example, when forming a compound of the upper surface metal of the electrode and the copper wire, the compound of the upper surface metal and the copper wire is formed while scraping the pure metal on the upper surface to the outside of the joint (outside of the vibration direction 50). be able to.

図３（Ａ），（Ｂ）から分かるように、第２例のツール先端１２は、第１例に比べて先端面１２ａの振動方向５０での面積が広いことから、超音波振動を印加する領域が広くなるので、第２例のツール先端１２は接合エリアが広い場合、第１例のツール先端１１は接合エリアが比較的狭い場合に適用される。   As can be seen from FIGS. 3A and 3B, the tool tip 12 of the second example applies an ultrasonic vibration because the area of the tip surface 12a in the vibration direction 50 is larger than that of the first example. Since the region becomes wider, the tool tip 12 of the second example is applied when the joining area is wide, and the tool tip 11 of the first example is applied when the joining area is relatively narrow.

図４には、実施例において、所定の金属層（例えばチタン層）の上にアルミニウム層を形成した電極１９に、例えば第１例のツール先端１１を用い、銅線１８を接続した場合の接合状態（断面構成）が示されており、この図４に示されるように、電極１９のアルミニウム下層金属（チタン層）１９ｔと銅線１８との間には、ピュアなアルミニウムが存在しない結果となった。即ち、図示していないが、銅線１８と電極１９との間には（図の銅線１８側に）、１００ｎｍ程度の厚さの銅−アルミニウム化合物（金属間化合物）が形成されると共に、この化合物形成に貢献しないピュアなアルミニウムは、接合部の外へ掻き出される。   In FIG. 4, in the embodiment, for example, when the tool tip 11 of the first example is used and the copper wire 18 is connected to the electrode 19 in which an aluminum layer is formed on a predetermined metal layer (for example, a titanium layer). The state (cross-sectional configuration) is shown, and as shown in FIG. 4, pure aluminum does not exist between the aluminum lower layer metal (titanium layer) 19t of the electrode 19 and the copper wire 18. It was. That is, although not shown, a copper-aluminum compound (intermetallic compound) having a thickness of about 100 nm is formed between the copper wire 18 and the electrode 19 (on the copper wire 18 side in the figure), Pure aluminum that does not contribute to this compound formation is scraped out of the joint.

図１（Ａ）の第１例のツール先端１１では、図３（Ａ）で示されるように、接合部の中央部から超音波が与えられるので、アルミニウムを接合部の外（超音波振動方向５０の外側）へ掻き出し易く、図１（Ｂ）の第２例のツール先端１２でも、図３（Ｂ）に示されるように、超音波振動が広いエリアに伝わることから、接合エリアが広い場合でも、良好な接合が可能となる。なお、この図３（Ｂ）の場合、ピュアなアルミニウムが接合中心部に僅かに残ることがあるが、接合の信頼性の評価に影響しない程度であった。   In the first example of the tool tip 11 in FIG. 1 (A), as shown in FIG. 3 (A), since ultrasonic waves are applied from the center of the joint, aluminum is removed from the joint (in the direction of ultrasonic vibration). When the joining area is wide because the ultrasonic vibration is transmitted to a wide area as shown in FIG. 3B even at the tool tip 12 of the second example of FIG. 1B. However, good bonding is possible. In the case of FIG. 3 (B), pure aluminum may remain slightly in the center of the joint, but it is not affected by the evaluation of the reliability of the joint.

図５には、ツール先端がワッフルタイプとなるボンディングツールを用い、図４の場合と同様に下層金属（チタン層）の上にアルミニウム層を形成した電極１９に銅線１８を結線するワイヤボンディングが示されており、このワッフルタイプのツール先端２１は、図５（Ａ）のように、菱形の凸部２２と凹部２３から構成されるが、このツール先端２１を用いると、接合時には、図５（Ｂ）のように、超音波の印加点を接合内部に多数個持つことになる。そのため、ピュアなアルミニウム２４が接合部外に掻き出されず、図５（Ｃ）の断面構成のように、電極１９のアルミニウム下層金属（チタン層）１９ｔと銅線１８との間に、ピュアなアルミニウム２４が残る結果となった。   FIG. 5 shows a wire bonding method in which a copper wire 18 is connected to an electrode 19 in which an aluminum layer is formed on a lower layer metal (titanium layer) as in the case of FIG. As shown in FIG. 5A, the waffle-type tool tip 21 is composed of a diamond-shaped convex portion 22 and a concave portion 23. When this tool tip 21 is used, FIG. As shown in (B), there are many ultrasonic application points inside the joint. Therefore, the pure aluminum 24 is not scraped out of the joint, and the pure aluminum 24 is disposed between the aluminum lower layer metal (titanium layer) 19t of the electrode 19 and the copper wire 18 as shown in the cross-sectional configuration of FIG. As a result, aluminum 24 remained.

実施例によれば、ツール先端１１，１２の中央部に超音波振動方向５０に長くなる溝１１ｂ，１２ｂを設け、またこの溝内の超音波振動方向の中央部に１つの凸部１４又は凹部１５を形成したウエッジツールを用い、このツール先端１１，１２を銅線１８に食い付かせながら超音波振動による接合を行うので、強固な接合強度が得られ、耐熱化を強化した接合が実現可能となる。   According to the embodiment, the grooves 11b and 12b that are elongated in the ultrasonic vibration direction 50 are provided in the central portion of the tool tips 11 and 12, and one convex portion 14 or concave portion is provided in the central portion in the ultrasonic vibration direction in the groove. 15 is used, and the tool tips 11 and 12 are bonded to the copper wire 18 by ultrasonic vibration while the tool tips 11 and 12 are biting into the copper wire 18, so that strong bonding strength can be obtained and bonding with enhanced heat resistance can be realized. It becomes.

本発明は、パワーエレクトロニクスを使用する分野への利用が可能である。近年、電気自動車、スマートグリット、産業機器関係から低炭素社会実現に向けた高温動作保証の要求が強く、高温動作で長期信頼性を満足する研究が盛んに行われており、このような要求に期待できる技術として、銅太線ボンディング技術があり、この銅太線ボンディング技術として使用できる。   The present invention can be applied to the field using power electronics. In recent years, there has been a strong demand for guaranteeing high-temperature operation for the realization of a low-carbon society from electric vehicles, smart grids, and industrial equipment, and research that satisfies long-term reliability with high-temperature operation has been actively conducted. As a promising technology, there is a copper thick wire bonding technology, which can be used as this copper thick wire bonding technology.

１，１１，１２，２１…ツール先端、
１０…ボンディングツール（ウエッジツール）、
１１ａ，１２ａ…端側凸部（土手部）、
１１ｂ，１２ｂ…溝、
１４，１６，２２…凸部、１５，２３…凹部、
１８…銅線、 １９…半導体素子の電極、
１９ｔ…アルミニウム下層金属（チタン層）、
２４…ピュアなアルミニウム、
５０…超音波振動方向。 1, 11, 12, 21 ... Tool tip,
10 ... Bonding tool (wedge tool),
11a, 12a ... end side convex part (bank part),
11b, 12b ... groove,
14, 16, 22 ... convex part, 15, 23 ... concave part,
18 ... Copper wire, 19 ... Electrode of semiconductor element,
19t ... Aluminum lower layer metal (titanium layer),
24 ... Pure aluminum,
50: Ultrasonic vibration direction.

Claims (2)

表面に所定の金属層を形成した電極に対し、超音波振動を与えながら銅線をボンディングツールにより接合する半導体装置の製造方法において、
上記ツール先端の中央部に超音波振動方向に長くなる溝を設けたボンディングツールを用い、このボンディングツールの溝を上記銅線に食い付かせながらこの溝の長手方向に沿って超音波振動を与えることを特徴とするボンディングツールを用いた半導体装置の製造方法。 In the method of manufacturing a semiconductor device in which a copper wire is bonded by a bonding tool while applying ultrasonic vibration to an electrode having a predetermined metal layer formed on the surface,
A bonding tool having a groove extending in the ultrasonic vibration direction at the center of the tool tip is used, and ultrasonic vibration is applied along the longitudinal direction of the groove while the groove of the bonding tool bites the copper wire. A method of manufacturing a semiconductor device using a bonding tool. 上記電極表面の金属層をアルミニウム層とし、このアルミニウム層中のアルミニウムを接合部外へ掻き出しながら上記銅線と上記電極のアルミニウム下層の金属との間に、銅−アルミニウム化合物を形成したことを特徴とする請求項１記載のボンディングツールを用いた半導体装置の製造方法。   The metal layer on the electrode surface is an aluminum layer, and a copper-aluminum compound is formed between the copper wire and the metal under the aluminum layer of the electrode while scraping the aluminum in the aluminum layer out of the joint. A method for manufacturing a semiconductor device using the bonding tool according to claim 1.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058603A (en) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd Ultrasonic wire bonder
JP2013004779A (en) * 2011-06-17 2013-01-07 Sanken Electric Co Ltd Semiconductor device and semiconductor device manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058603A (en) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd Ultrasonic wire bonder
JP2013004779A (en) * 2011-06-17 2013-01-07 Sanken Electric Co Ltd Semiconductor device and semiconductor device manufacturing method

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