JP2012532444A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000002952 polymeric resin Substances 0.000 claims abstract description 30
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 19
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 description 23
- 239000010408 film Substances 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000000926 separation method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 239000011669 selenium Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- -1 ITO Chemical compound 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (19)
- 太陽電池セルの上に形成された高分子樹脂層と、
前記高分子樹脂層の上に配置された上部基板と、を含み、
前記高分子樹脂層はパターニングされたものを含むことを特徴とする太陽電池。 - 前記高分子樹脂層と上部基板との間には空気(air)が挿入されたものを含むことを特徴とする請求項1に記載の太陽電池。
- 前記高分子樹脂層に形成されたパターンは、凹部を含むことを特徴とする請求項1に記載の太陽電池。
- 前記凹部の側壁は傾斜するように形成されるものを含むことを特徴とする請求項3に記載の太陽電池。
- 前記凹部は上部が下部より広く形成されるものを含むことを特徴とする請求項3に記載の太陽電池。
- 前記凹部は断面がノッチ形状または曲面形状であることを特徴とする請求項3に記載の太陽電池。
- 前記凹部は太陽電池セルの非活性領域の上部に位置することを特徴とする請求項3に記載の太陽電池。
- 前記凹部の内に空気が位置することを特徴とする請求項3に記載の太陽電池。
- 前記上部基板に前記凹部に対応する突出部が形成されて前記凹部に前記突出部が挿入されることを特徴とする請求項3に記載の太陽電池。
- 前記高分子樹脂層はEVA(Ethyl Vinyl Acetate)であるものを含むことを特徴とする請求項1に記載の太陽電池。
- 太陽電池セルの上に高分子樹脂層を形成するステップと、
前記高分子樹脂層にパターンを形成するステップと、
前記パターンが形成された高分子樹脂層の上に上部基板を位置させるステップと、
を含むことを特徴とする太陽電池の製造方法。 - 前記パターンを形成するステップは、突起が形成されたモールド(mold)に圧力を加えたり、または熱圧搾機(hot press)を用いることを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記高分子樹脂層と上部基板との間には空気(air)が挿入されたものを含むことを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記高分子樹脂層に形成されたパターンは凹部を含むことを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記凹部は太陽電池セルの非活性領域の上部に位置することを特徴とする請求項14に記載の太陽電池の製造方法。
- 前記凹部の内に空気が位置することを特徴とする請求項14に記載の太陽電池の製造方法。
- 前記上部基板を位置させるステップでは、前記上部基板に前記凹部に対応する突出部が形成されて前記凹部に前記突出部を挿入することを特徴とする請求項14に記載の太陽電池の製造方法。
- 太陽電池セルの上に高分子樹脂層を形成するステップと、
前記高分子樹脂層に突出部が形成された上部基板を位置させて前記高分子樹脂層に凹部を含むパターンを形成するステップと、
を含むことを特徴とする太陽電池の製造方法。 - 前記突出部は太陽電池セルの非活性領域の上部に位置することを特徴とする請求項18に記載の太陽電池の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090058788A KR101154727B1 (ko) | 2009-06-30 | 2009-06-30 | 태양전지 및 이의 제조방법 |
KR10-2009-0058788 | 2009-06-30 | ||
PCT/KR2010/004256 WO2011002230A2 (ko) | 2009-06-30 | 2010-06-30 | 태양전지 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2012532444A true JP2012532444A (ja) | 2012-12-13 |
JP6087146B2 JP6087146B2 (ja) | 2017-03-01 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012517411A Expired - Fee Related JP6087146B2 (ja) | 2009-06-30 | 2010-06-30 | 太陽電池及びその製造方法 |
Country Status (6)
Country | Link |
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US (1) | US9799788B2 (ja) |
EP (1) | EP2410575B1 (ja) |
JP (1) | JP6087146B2 (ja) |
KR (1) | KR101154727B1 (ja) |
CN (1) | CN102396076B (ja) |
WO (1) | WO2011002230A2 (ja) |
Cited By (1)
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JP2013239544A (ja) * | 2012-05-15 | 2013-11-28 | Panasonic Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
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US20140290741A1 (en) * | 2011-08-29 | 2014-10-02 | Kyocera Corporation | Photoelectric conversion apparatus |
KR101273186B1 (ko) * | 2011-09-20 | 2013-06-17 | 엘지이노텍 주식회사 | 태양광 발전장치 |
CN104091854B (zh) * | 2013-04-01 | 2017-06-20 | 北京恒基伟业投资发展有限公司 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
US9537031B2 (en) * | 2013-06-28 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nozzle assembly and method for fabricating a solar cell |
CN105206703B (zh) * | 2014-05-26 | 2018-04-27 | 北京恒基伟业投资发展有限公司 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
US10937915B2 (en) | 2016-10-28 | 2021-03-02 | Tesla, Inc. | Obscuring, color matching, and camouflaging solar panels |
US20180130921A1 (en) * | 2016-11-09 | 2018-05-10 | Tesla, Inc. | System and methods for achieving a micro louver effect in a photovoltaic cell |
CN113088116B (zh) * | 2021-03-16 | 2022-06-07 | 杭州玻美文化艺术有限公司 | 具有蜂窝状彩色钢化涂层的太阳能玻璃面板及其生产方法、彩色太阳能光伏组件 |
CN113097340B (zh) * | 2021-03-16 | 2022-08-02 | 杭州科望特种油墨有限公司 | 具有蜂窝状彩色涂层的太阳能面板及其生产方法、彩色太阳能光伏组件 |
CN113087406B (zh) * | 2021-03-16 | 2022-10-14 | 杭州玻美文化艺术有限公司 | 高温钢化型彩色光伏玻璃面板及其生产方法、彩色太阳能光伏组件 |
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2009
- 2009-06-30 KR KR1020090058788A patent/KR101154727B1/ko active IP Right Grant
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2010
- 2010-06-30 EP EP10794365.6A patent/EP2410575B1/en active Active
- 2010-06-30 WO PCT/KR2010/004256 patent/WO2011002230A2/ko active Application Filing
- 2010-06-30 CN CN201080016605.XA patent/CN102396076B/zh not_active Expired - Fee Related
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013239544A (ja) * | 2012-05-15 | 2013-11-28 | Panasonic Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
US8853523B2 (en) | 2012-05-15 | 2014-10-07 | Panasonic Corporation | Solar cell module and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
US9799788B2 (en) | 2017-10-24 |
KR101154727B1 (ko) | 2012-06-08 |
CN102396076A (zh) | 2012-03-28 |
EP2410575B1 (en) | 2018-08-15 |
CN102396076B (zh) | 2014-02-12 |
WO2011002230A2 (ko) | 2011-01-06 |
WO2011002230A3 (ko) | 2011-04-14 |
EP2410575A2 (en) | 2012-01-25 |
JP6087146B2 (ja) | 2017-03-01 |
EP2410575A4 (en) | 2013-10-16 |
KR20110001305A (ko) | 2011-01-06 |
US20120266950A1 (en) | 2012-10-25 |
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