CN104091854B - 一种薄膜太阳能电池的生产方法及其电沉积装置 - Google Patents
一种薄膜太阳能电池的生产方法及其电沉积装置 Download PDFInfo
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- CN104091854B CN104091854B CN201310110497.8A CN201310110497A CN104091854B CN 104091854 B CN104091854 B CN 104091854B CN 201310110497 A CN201310110497 A CN 201310110497A CN 104091854 B CN104091854 B CN 104091854B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 230000008021 deposition Effects 0.000 title claims abstract description 25
- 238000004070 electrodeposition Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000007493 shaping process Methods 0.000 claims abstract description 5
- 239000011265 semifinished product Substances 0.000 claims description 41
- 238000003780 insertion Methods 0.000 claims description 12
- 230000037431 insertion Effects 0.000 claims description 12
- 239000012774 insulation material Substances 0.000 claims description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 11
- 230000005693 optoelectronics Effects 0.000 abstract description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
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- 230000009466 transformation Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310110497.8A CN104091854B (zh) | 2013-04-01 | 2013-04-01 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
Applications Claiming Priority (1)
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CN201310110497.8A CN104091854B (zh) | 2013-04-01 | 2013-04-01 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
Publications (2)
Publication Number | Publication Date |
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CN104091854A CN104091854A (zh) | 2014-10-08 |
CN104091854B true CN104091854B (zh) | 2017-06-20 |
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CN201310110497.8A Active CN104091854B (zh) | 2013-04-01 | 2013-04-01 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105206703B (zh) * | 2014-05-26 | 2018-04-27 | 北京恒基伟业投资发展有限公司 | 一种薄膜太阳能电池的生产方法及其电沉积装置 |
CN106033782A (zh) * | 2015-03-11 | 2016-10-19 | 英属开曼群岛商精曜有限公司 | 太阳能电池、太阳能电池模块及其制作方法 |
CN106868562B (zh) * | 2016-11-23 | 2018-06-19 | 瑞尔太阳能投资有限公司 | 一种电化学沉积薄膜太阳能电池的连续生产的装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1918711A (zh) * | 2003-12-25 | 2007-02-21 | 昭和壳牌石油株式会社 | 集成薄膜太阳能电池及其制造方法 |
CN102231411A (zh) * | 2011-07-11 | 2011-11-02 | 中国科学院深圳先进技术研究院 | 薄膜型太阳能电池表面自对准电极的制造方法 |
CN102396076A (zh) * | 2009-06-30 | 2012-03-28 | Lg伊诺特有限公司 | 太阳能电池及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101091379B1 (ko) * | 2009-10-30 | 2011-12-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
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2013
- 2013-04-01 CN CN201310110497.8A patent/CN104091854B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1918711A (zh) * | 2003-12-25 | 2007-02-21 | 昭和壳牌石油株式会社 | 集成薄膜太阳能电池及其制造方法 |
CN102396076A (zh) * | 2009-06-30 | 2012-03-28 | Lg伊诺特有限公司 | 太阳能电池及其制造方法 |
CN102231411A (zh) * | 2011-07-11 | 2011-11-02 | 中国科学院深圳先进技术研究院 | 薄膜型太阳能电池表面自对准电极的制造方法 |
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Address after: Room 604, floor 6, building 1, yard 4, Wangjing East Road, Chaoyang District, Beijing 100102 Patentee after: HI-TECH WEALTH INVESTMENT DEVELOPMENT GROUP CO.,LTD. Address before: 100083 Beijing City, Haidian District Zhongguancun Road No. 18 smartfortune International Building, C block 10 layer Patentee before: Beijing Hi-Tech Wealth Investment Development Co.,Ltd. |
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Effective date of registration: 20200618 Address after: Commercial (Fengshou incubator No. 1391), 3rd floor, block C, tianlangyuan, Chaoyang District, Beijing 100102 Patentee after: Beijing Hengchang Power Technology Co.,Ltd. Address before: Room 604, floor 6, building 1, yard 4, Wangjing East Road, Chaoyang District, Beijing 100102 Patentee before: HI-TECH WEALTH INVESTMENT DEVELOPMENT GROUP Co.,Ltd. |
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Effective date of registration: 20211202 Address after: Room 1101, unit 1, floor 10, courtyard 1, No. 33, Guangshun North Street, Chaoyang District, Beijing 100102 Patentee after: Beijing Hengyun Power Technology Co.,Ltd. Address before: 100102 commercial building 03, floor 3, block C, tianlangyuan, Chaoyang District, Beijing (No. 1391, Fengshou incubator) Patentee before: Beijing Hengchang Power Technology Co.,Ltd. |
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