JP2012532342A - フォトマスクの修復方法 - Google Patents

フォトマスクの修復方法 Download PDF

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Publication number
JP2012532342A
JP2012532342A JP2012517867A JP2012517867A JP2012532342A JP 2012532342 A JP2012532342 A JP 2012532342A JP 2012517867 A JP2012517867 A JP 2012517867A JP 2012517867 A JP2012517867 A JP 2012517867A JP 2012532342 A JP2012532342 A JP 2012532342A
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JP
Japan
Prior art keywords
ink
sol
gel composition
molybdenum
photomask
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Pending
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JP2012517867A
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English (en)
Japanese (ja)
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JP2012532342A5 (enExample
Inventor
ナビル アムロ
レイモンド サネドリン
サンディープ ディサワル
ジョセフ エス． フラガラ
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ナノインク インコーポレーティッド
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Publication of JP2012532342A publication Critical patent/JP2012532342A/ja
Publication of JP2012532342A5 publication Critical patent/JP2012532342A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2012517867A 2009-06-30 2010-06-29 フォトマスクの修復方法 Pending JP2012532342A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22209609P 2009-06-30 2009-06-30
US61/222,096 2009-06-30
PCT/US2010/040470 WO2011002806A1 (en) 2009-06-30 2010-06-29 Advanced photomask repair

Publications (2)

Publication Number Publication Date
JP2012532342A true JP2012532342A (ja) 2012-12-13
JP2012532342A5 JP2012532342A5 (enExample) 2013-08-15

Family

ID=42799670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012517867A Pending JP2012532342A (ja) 2009-06-30 2010-06-29 フォトマスクの修復方法

Country Status (7)

Country Link
US (1) US20120164564A1 (enExample)
EP (1) EP2449427A1 (enExample)
JP (1) JP2012532342A (enExample)
KR (1) KR20120104966A (enExample)
AU (1) AU2010266375A1 (enExample)
CA (1) CA2766589A1 (enExample)
WO (1) WO2011002806A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9665000B1 (en) 2015-11-16 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for EUV mask cleaning with non-thermal solution
FR3061210B1 (fr) * 2016-12-22 2021-12-24 Electricite De France Procede sol-gel de fabrication d'un revetement anticorrosion sur substrat metallique
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
KR102083308B1 (ko) 2018-05-23 2020-04-23 한국표준과학연구원 탐침형 원자 현미경을 이용한 리소그래피 방법
KR102092653B1 (ko) * 2019-06-28 2020-06-01 (주)네프코 방오코팅 포토마스크의 패턴 유실 결함 수리 방법
CN111165904B (zh) * 2020-01-07 2024-11-15 云南中烟工业有限责任公司 一种低表面能镍铬加热丝、其制备方法及用途
CN111812357B (zh) * 2020-07-10 2021-05-25 浙江大学 一种用于微纳米制造的自填料三臂式热扫描探针

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07165413A (ja) * 1993-09-13 1995-06-27 Dow Corning Corp Ｓｉ−Ｏ含有皮膜の形成方法
JPH1079381A (ja) * 1996-09-03 1998-03-24 Toshiba Corp 絶縁膜パターンの形成方法および感光性組成物
JPH10258252A (ja) * 1997-01-18 1998-09-29 Tokyo Ohka Kogyo Co Ltd Ｂｉ系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JP2000010293A (ja) * 1998-06-17 2000-01-14 Jsr Corp 反射防止膜形成用組成物および反射防止膜
JP2005513768A (ja) * 2001-12-17 2005-05-12 ノースウエスタン ユニバーシティ 直接書込みナノリソグラフィック印刷による固体フィーチャのパターニング
JP2006504136A (ja) * 2002-10-21 2006-02-02 ナノインク インコーポレーティッド ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213660A (ja) * 1983-05-13 1984-12-03 鐘淵化学工業株式会社 多孔性セラミツクス薄膜およびその製造法
JPH11512474A (ja) 1995-09-12 1999-10-26 ゲレスト インコーポレーテツド ベータ−置換オルガノシルセスキオキサンおよびその使用法
US6635311B1 (en) 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US7011910B2 (en) 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
US7491422B2 (en) 2002-10-21 2009-02-17 Nanoink, Inc. Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07165413A (ja) * 1993-09-13 1995-06-27 Dow Corning Corp Ｓｉ−Ｏ含有皮膜の形成方法
JPH1079381A (ja) * 1996-09-03 1998-03-24 Toshiba Corp 絶縁膜パターンの形成方法および感光性組成物
JPH10258252A (ja) * 1997-01-18 1998-09-29 Tokyo Ohka Kogyo Co Ltd Ｂｉ系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JP2000010293A (ja) * 1998-06-17 2000-01-14 Jsr Corp 反射防止膜形成用組成物および反射防止膜
JP2005513768A (ja) * 2001-12-17 2005-05-12 ノースウエスタン ユニバーシティ 直接書込みナノリソグラフィック印刷による固体フィーチャのパターニング
JP2006504136A (ja) * 2002-10-21 2006-02-02 ナノインク インコーポレーティッド ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用

Also Published As

Publication number Publication date
EP2449427A1 (en) 2012-05-09
CA2766589A1 (en) 2011-01-06
US20120164564A1 (en) 2012-06-28
AU2010266375A1 (en) 2012-02-09
WO2011002806A1 (en) 2011-01-06
KR20120104966A (ko) 2012-09-24

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