JP2012531740A - 封入相変化セル構造および方法 - Google Patents
封入相変化セル構造および方法 Download PDFInfo
- Publication number
- JP2012531740A JP2012531740A JP2012517482A JP2012517482A JP2012531740A JP 2012531740 A JP2012531740 A JP 2012531740A JP 2012517482 A JP2012517482 A JP 2012517482A JP 2012517482 A JP2012517482 A JP 2012517482A JP 2012531740 A JP2012531740 A JP 2012531740A
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- forming
- substrate
- change material
- cell stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000012782 phase change material Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052714 tellurium Inorganic materials 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 8
- 230000032798 delamination Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 150000004770 chalcogenides Chemical class 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (27)
- 相変化セル構造を形成する方法であって、
底部電極を含む、基板突起を形成することと、
相変化材料を前記基板突起の上に形成することと、
導電材料を前記相変化材料の上に形成することと、
前記導電材料の一部分および前記相変化材料の一部分を除去して、封入スタック構造を形成することと、を含む方法。 - 基板の中に開口部を形成し、前記開口部に導電体を充填することによって、前記底部電極を形成することを含む、請求項1に記載の方法。
- 非コンフォーマル蒸着法を使用して、前記相変化材料を形成することを含む、請求項1に記載の方法。
- 非コンフォーマル蒸着法を使用して、前記導電材料を形成することを含む、請求項1に記載の方法。
- 前記基板突起を形成することは、基板の一部分を除去することを含む、請求項1〜4のうちのいずれか1項に記載の方法。
- 前記基板突起を形成することは、基板をフォトパターニングすること、および前記基板をエッチングすることを含む、請求項1〜4のうちのいずれか1項に記載の方法。
- 前記導電材料および前記相変化材料の前記一部分を除去することは、隣接する封入スタック構造から前記封入スタック構造を分離する、請求項1〜4のうちのいずれか1項に記載の方法。
- 相変化メモリ構造を形成する方法であって、
第1の相変化セルスタックを基板上に形成することであって、前記第1の相変化セルスタックは、第1の基板突起を封入する相変化材料部分と、前記相変化材料部分上に形成される頂部電極とを含むことと、
第2の相変化セルスタックを前記基板上に形成することであって、前記第2の相変化セルスタックは、第2の基板突起を封入する相変化材料部分と、前記相変化材料部分上に形成される頂部電極とを含むことと、
前記第2の相変化セルスタックから前記第1の相変化セルスタックを分離することと、
を含む方法。 - 前記頂部電極が前記相変化材料部分を封入するように、前記上部電極を形成することを含む請求項8に記載の方法。
- 前記第2の相変化セルスタックから前記第1の相変化セルスタックを分離することは、前記基板を曝露するように、前記相変化材料部分および前記頂部電極の一部分を除去することを含む、請求項8〜9のうちのいずれか1項に記載の方法。
- 前記基板を曝露するように、前記相変化材料部分および前記頂部電極にエッチングすることを含む、請求項10に記載の方法。
- 前記第1の相変化セルスタックを形成することは、前記第1の基板突起の中に第1の底部電極を形成することを含み、前記第2の相変化セルスタックを形成することは、前記第2の基板突起の中に第2の底部電極を形成することを含む、請求項8〜9のうちのいずれか1項に記載の方法。
- 前記第1の相変化セルスタックを第1の金属接点上に形成することと、第2の相変化セルスタックを第2の金属接点上に形成することとを含む、請求項12に記載の方法。
- 前記第1の底部電極を前記第1の金属接点に連結することと、前記第2の底部電極を前記第2の金属接点に連結することとを含む、請求項13に記載の方法。
- 相変化メモリセル構造であって、
基板突起の中に形成される、底部電極と、
前記基板突起の少なくとも一部分を封入する相変化材料部分と、
前記相変化材料部分上に形成される頂部電極と、を備える相変化メモリセル構造。 - 前記基板突起は、前記相変化材料部分によって覆われる、第1および第2の側壁を含み、前記相変化材料部分は、前記頂部電極によって少なくとも部分的に覆われる、第1および第2の側壁を含む、請求項15に記載のメモリセル。
- 前記頂部電極は、前記相変化材料を少なくとも部分的に封入する、請求項15に記載のメモリセル。
- 前記底部電極は、金属接点に連結される、請求項15に記載のメモリセル。
- 前記金属接点は、前記相変化メモリセル構造に対応するアクセストランジスタと関連する、ドレイン領域に連結される、請求項18に記載のメモリセル。
- 前記底部電極は、直径が約50ナノメートル(nm)である、請求項15〜19のうちのいずれか1項に記載のメモリセル。
- 前記相変化材料部分は、直径が約100ナノメートル(nm)であり、深さが100nmである、請求項15〜19のうちのいずれか1項に記載のメモリセル。
- 前記相変化セル構造は、隣接する相変化セル構造から分離される、請求項15〜19のうちのいずれか1項に記載のメモリセル。
- 前記基板の曝露部分は、隣接する相変化セル構造から前記相変化セル構造を分離する、請求項22に記載のメモリセル。
- メモリデバイスであって、
相変化メモリセルのアレイを備え、
ある数の前記相変化メモリセルは、基板突起の少なくとも一部分を封入する相変化材料、および前記相変化材料の少なくとも一部分を封入する頂部電極で形成される、相変化セルスタックを含むメモリデバイス。 - 前記相変化セルスタックは、前記相変化メモリセルに対応するアクセストランジスタのソース領域およびドレイン領域のうちの少なくとも1つに連結される、導電接点に接続される、請求項24に記載のデバイス。
- 前記相変化セルスタックは、前記ある数の相変化メモリセルと関連するローカル相互接続を提供する、請求項24に記載のデバイス。
- 前記相変化セルスタックは、隣接する相変化セルスタックから分離される、請求項24〜26のうちのいずれか1項に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/489,957 US8058095B2 (en) | 2009-06-23 | 2009-06-23 | Encapsulated phase change cell structures and methods |
US12/489,957 | 2009-06-23 | ||
PCT/US2010/001666 WO2011005284A2 (en) | 2009-06-23 | 2010-06-10 | Encapsulated phase change cell structures and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012531740A true JP2012531740A (ja) | 2012-12-10 |
JP5748750B2 JP5748750B2 (ja) | 2015-07-15 |
Family
ID=43353477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012517482A Expired - Fee Related JP5748750B2 (ja) | 2009-06-23 | 2010-06-10 | 封入相変化セル構造および方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US8058095B2 (ja) |
EP (1) | EP2446469A4 (ja) |
JP (1) | JP5748750B2 (ja) |
KR (1) | KR101333391B1 (ja) |
CN (1) | CN102460684B (ja) |
TW (1) | TWI404245B (ja) |
WO (1) | WO2011005284A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8058095B2 (en) * | 2009-06-23 | 2011-11-15 | Micron Technology, Inc. | Encapsulated phase change cell structures and methods |
JP5438707B2 (ja) * | 2011-03-04 | 2014-03-12 | シャープ株式会社 | 可変抵抗素子及びその製造方法、並びに、当該可変抵抗素子を備えた不揮発性半導体記憶装置 |
US9158546B1 (en) | 2011-04-06 | 2015-10-13 | P4tents1, LLC | Computer program product for fetching from a first physical memory between an execution of a plurality of threads associated with a second physical memory |
US9164679B2 (en) | 2011-04-06 | 2015-10-20 | Patents1, Llc | System, method and computer program product for multi-thread operation involving first memory of a first memory class and second memory of a second memory class |
US9176671B1 (en) | 2011-04-06 | 2015-11-03 | P4tents1, LLC | Fetching data between thread execution in a flash/DRAM/embedded DRAM-equipped system |
US8930647B1 (en) | 2011-04-06 | 2015-01-06 | P4tents1, LLC | Multiple class memory systems |
US9432298B1 (en) | 2011-12-09 | 2016-08-30 | P4tents1, LLC | System, method, and computer program product for improving memory systems |
US9170744B1 (en) | 2011-04-06 | 2015-10-27 | P4tents1, LLC | Computer program product for controlling a flash/DRAM/embedded DRAM-equipped system |
US9417754B2 (en) | 2011-08-05 | 2016-08-16 | P4tents1, LLC | User interface system, method, and computer program product |
CN102593352A (zh) * | 2012-02-21 | 2012-07-18 | 北京大学 | 一种阻变存储器的制备方法 |
US9130162B2 (en) * | 2012-12-20 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
US9184377B2 (en) * | 2013-06-11 | 2015-11-10 | Micron Technology, Inc. | Resistance variable memory cell structures and methods |
US10283704B2 (en) * | 2017-09-26 | 2019-05-07 | International Business Machines Corporation | Resistive memory device |
US20190330736A1 (en) * | 2018-04-29 | 2019-10-31 | Applied Materials, Inc. | Low Temperature Atomic Layer Deposition Of Silicon Nitride |
CN112449726A (zh) * | 2020-10-12 | 2021-03-05 | 长江先进存储产业创新中心有限责任公司 | 用于3d交叉点存储器的具有减小的编程电流和热串扰的新型缩小单元结构和制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006303294A (ja) * | 2005-04-22 | 2006-11-02 | Renesas Technology Corp | 相変化型不揮発性メモリ及びその製造方法 |
JP2006351992A (ja) * | 2005-06-20 | 2006-12-28 | Renesas Technology Corp | 半導体記憶装置及びその製造方法 |
US20070194294A1 (en) * | 2006-02-21 | 2007-08-23 | Samsung Electronics Co., Ltd. | Phase change memory devices and methods for fabricating the same |
JP2008066449A (ja) * | 2006-09-06 | 2008-03-21 | Elpida Memory Inc | 半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6605821B1 (en) * | 2002-05-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Phase change material electronic memory structure and method for forming |
KR100568109B1 (ko) * | 2003-11-24 | 2006-04-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
KR20060008799A (ko) * | 2004-07-24 | 2006-01-27 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
US7488967B2 (en) * | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
US7560723B2 (en) * | 2006-08-29 | 2009-07-14 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US7511984B2 (en) * | 2006-08-30 | 2009-03-31 | Micron Technology, Inc. | Phase change memory |
KR100858083B1 (ko) * | 2006-10-18 | 2008-09-10 | 삼성전자주식회사 | 하부전극 콘택층과 상변화층 사이에 넓은 접촉면적을 갖는상변화 메모리 소자 및 그 제조 방법 |
KR101263822B1 (ko) * | 2006-10-20 | 2013-05-13 | 삼성전자주식회사 | 상변화 메모리 소자의 제조 방법 및 이에 적용된상변화층의 형성방법 |
US8188569B2 (en) * | 2006-12-15 | 2012-05-29 | Qimonda Ag | Phase change random access memory device with transistor, and method for fabricating a memory device |
US7456460B2 (en) * | 2007-01-29 | 2008-11-25 | International Business Machines Corporation | Phase change memory element and method of making the same |
US7745231B2 (en) * | 2007-04-17 | 2010-06-29 | Micron Technology, Inc. | Resistive memory cell fabrication methods and devices |
TWI333273B (en) * | 2007-05-02 | 2010-11-11 | Powerchip Technology Corp | Methods for reducing a contact area between heating electrode and phase-change material layer, phase-change memory devices and methods for fabricating the same |
US7550313B2 (en) * | 2007-07-21 | 2009-06-23 | International Business Machines Corporation | Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity |
US8389967B2 (en) * | 2007-10-18 | 2013-03-05 | International Business Machines Corporation | Programmable via devices |
US8058095B2 (en) * | 2009-06-23 | 2011-11-15 | Micron Technology, Inc. | Encapsulated phase change cell structures and methods |
-
2009
- 2009-06-23 US US12/489,957 patent/US8058095B2/en not_active Expired - Fee Related
-
2010
- 2010-06-10 JP JP2012517482A patent/JP5748750B2/ja not_active Expired - Fee Related
- 2010-06-10 EP EP10797434.7A patent/EP2446469A4/en not_active Ceased
- 2010-06-10 CN CN201080028123.6A patent/CN102460684B/zh active Active
- 2010-06-10 KR KR1020127001713A patent/KR101333391B1/ko active IP Right Grant
- 2010-06-10 WO PCT/US2010/001666 patent/WO2011005284A2/en active Application Filing
- 2010-06-22 TW TW099120314A patent/TWI404245B/zh active
-
2011
- 2011-10-27 US US13/282,691 patent/US8698209B2/en active Active
-
2014
- 2014-02-19 US US14/184,142 patent/US9064793B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006303294A (ja) * | 2005-04-22 | 2006-11-02 | Renesas Technology Corp | 相変化型不揮発性メモリ及びその製造方法 |
JP2006351992A (ja) * | 2005-06-20 | 2006-12-28 | Renesas Technology Corp | 半導体記憶装置及びその製造方法 |
US20070194294A1 (en) * | 2006-02-21 | 2007-08-23 | Samsung Electronics Co., Ltd. | Phase change memory devices and methods for fabricating the same |
JP2008066449A (ja) * | 2006-09-06 | 2008-03-21 | Elpida Memory Inc | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102460684A (zh) | 2012-05-16 |
EP2446469A2 (en) | 2012-05-02 |
TW201119108A (en) | 2011-06-01 |
KR20120042855A (ko) | 2012-05-03 |
WO2011005284A2 (en) | 2011-01-13 |
US8698209B2 (en) | 2014-04-15 |
KR101333391B1 (ko) | 2013-11-28 |
EP2446469A4 (en) | 2013-10-16 |
WO2011005284A3 (en) | 2011-03-10 |
JP5748750B2 (ja) | 2015-07-15 |
US20100320436A1 (en) | 2010-12-23 |
US20140246642A1 (en) | 2014-09-04 |
US8058095B2 (en) | 2011-11-15 |
TWI404245B (zh) | 2013-08-01 |
US20120037878A1 (en) | 2012-02-16 |
US9064793B2 (en) | 2015-06-23 |
CN102460684B (zh) | 2014-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5748750B2 (ja) | 封入相変化セル構造および方法 | |
JP5668141B2 (ja) | 相変化メモリ構造および方法 | |
TWI393217B (zh) | 相變化記憶體結構及方法 | |
CN100559623C (zh) | 非易失存储元件及其制造方法 | |
US8426967B2 (en) | Scaled-down phase change memory cell in recessed heater | |
TWI723356B (zh) | 半導體裝置、其形成方法及應用 | |
US11031435B2 (en) | Memory device containing ovonic threshold switch material thermal isolation and method of making the same | |
US7545019B2 (en) | Integrated circuit including logic portion and memory portion | |
US7863610B2 (en) | Integrated circuit including silicide region to inhibit parasitic currents | |
US9082964B2 (en) | Nonvolative memory with filament | |
US8084759B2 (en) | Integrated circuit including doped semiconductor line having conductive cladding | |
US9362495B2 (en) | Confined resistance variable memory cells and methods | |
US20220173316A1 (en) | Semiconductor apparatus | |
CN107274927B (zh) | 相变储存元件及其应用 | |
US20140369107A1 (en) | Structures for resistance random access memory and methods of forming the same | |
US11715519B2 (en) | Bit line and word line connection for memory array | |
WO2022159406A1 (en) | Non-volatile memory device having pn diode | |
US20100163836A1 (en) | Low-volume phase-change material memory cell | |
WO2022203978A1 (en) | Non-volatile memory device having schottky diode | |
TW200838002A (en) | Damascene phase change RAM and manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20131107 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131107 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140324 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140324 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140407 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150402 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150512 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5748750 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |