JP2012529765A - プラズマ付着により成長させた基材構造 - Google Patents
プラズマ付着により成長させた基材構造 Download PDFInfo
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- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- YGBFTDQFAKDXBZ-UHFFFAOYSA-N tributyl stiborite Chemical compound [Sb+3].CCCC[O-].CCCC[O-].CCCC[O-] YGBFTDQFAKDXBZ-UHFFFAOYSA-N 0.000 description 1
- BXJWDOYMROEHEN-UHFFFAOYSA-N tributylstibane Chemical compound CCCC[Sb](CCCC)CCCC BXJWDOYMROEHEN-UHFFFAOYSA-N 0.000 description 1
- VCSUQOHFBBQHQV-UHFFFAOYSA-N triethoxy(methyl)stannane Chemical compound CCO[Sn](C)(OCC)OCC VCSUQOHFBBQHQV-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- JNONUPYOIZXSNQ-UHFFFAOYSA-N trimethyl(2-piperidin-1-ylethyl)silane Chemical compound C[Si](C)(C)CCN1CCCCC1 JNONUPYOIZXSNQ-UHFFFAOYSA-N 0.000 description 1
- FLQNGSAFRFEKNU-UHFFFAOYSA-N trimethyl(3-piperidin-1-ylpropyl)silane Chemical compound C[Si](C)(C)CCCN1CCCCC1 FLQNGSAFRFEKNU-UHFFFAOYSA-N 0.000 description 1
- WNHFEQWRHXLCMK-UHFFFAOYSA-N trimethyl(pyrrol-1-yl)silane Chemical compound C[Si](C)(C)N1C=CC=C1 WNHFEQWRHXLCMK-UHFFFAOYSA-N 0.000 description 1
- NQLVIKZJXFGUET-UHFFFAOYSA-N trimethyl(pyrrolidin-1-yl)silane Chemical compound C[Si](C)(C)N1CCCC1 NQLVIKZJXFGUET-UHFFFAOYSA-N 0.000 description 1
- YVWPNDBYAAEZBF-UHFFFAOYSA-N trimethylsilylmethanamine Chemical compound C[Si](C)(C)CN YVWPNDBYAAEZBF-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0910040.5A GB0910040D0 (en) | 2009-06-11 | 2009-06-11 | Substrate structure |
| GB0910040.5 | 2009-06-11 | ||
| PCT/GB2010/050856 WO2010142972A1 (en) | 2009-06-11 | 2010-05-25 | Substrate structure grown by plasma deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012529765A true JP2012529765A (ja) | 2012-11-22 |
| JP2012529765A5 JP2012529765A5 (enExample) | 2013-07-11 |
Family
ID=40937232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012514535A Pending JP2012529765A (ja) | 2009-06-11 | 2010-05-25 | プラズマ付着により成長させた基材構造 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20120052242A1 (enExample) |
| EP (1) | EP2440685A1 (enExample) |
| JP (1) | JP2012529765A (enExample) |
| GB (1) | GB0910040D0 (enExample) |
| WO (1) | WO2010142972A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7630165B2 (ja) | 2021-07-07 | 2025-02-17 | 国立研究開発法人産業技術総合研究所 | 粗さ解析のための方法及び情報処理システム |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| GB201210836D0 (en) * | 2012-06-19 | 2012-08-01 | Fujifilm Mfg Europe Bv | Method and device for manufacturing a barrier layer on a flexible substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000169969A (ja) * | 1998-09-29 | 2000-06-20 | Sekisui Chem Co Ltd | 放電プラズマ処理方法 |
| JP2003059924A (ja) * | 2001-08-17 | 2003-02-28 | Sekisui Chem Co Ltd | 多段型の放電プラズマ処理方法及び装置 |
| WO2007091891A1 (en) * | 2006-02-09 | 2007-08-16 | Fujifilm Manufacturing Europe B.V. | Short pulse atmospheric pressure glow discharge method and apparatus |
| WO2007139379A1 (en) * | 2006-05-30 | 2007-12-06 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for deposition using pulsed atmospheric pressure glow discharge |
| JP2008085300A (ja) * | 2006-08-29 | 2008-04-10 | Konica Minolta Holdings Inc | 薄膜の成膜方法、薄膜トランジスタの製造方法、および薄膜トランジスタ |
| JP2009540128A (ja) * | 2006-06-16 | 2009-11-19 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6146724A (en) * | 1994-06-06 | 2000-11-14 | The University Of Tennessee Research Corporation | One atmosphere uniform glow discharge plasma coating with gas barrier properties |
| EP1403902A1 (en) * | 2002-09-30 | 2004-03-31 | Fuji Photo Film B.V. | Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG) |
| JP2005104793A (ja) * | 2003-10-01 | 2005-04-21 | Nippon Sheet Glass Co Ltd | 電波透過熱線反射合わせ構造体およびその製造方法 |
| JP5506401B2 (ja) * | 2007-02-13 | 2014-05-28 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 磁気マスクデバイスを使用する基板プラズマ処理 |
| WO2008147184A2 (en) * | 2007-05-25 | 2008-12-04 | Fujifilm Manufacturing Europe B.V. | Atmospheric pressure glow discharge plasma method and system using heated substrate |
| EP2528082A3 (en) * | 2008-02-21 | 2014-11-05 | FUJIFILM Manufacturing Europe B.V. | Plasma treatment apparatus with an atmospheric pressure glow discharge electrode configuration |
-
2009
- 2009-06-11 GB GBGB0910040.5A patent/GB0910040D0/en not_active Ceased
-
2010
- 2010-05-25 JP JP2012514535A patent/JP2012529765A/ja active Pending
- 2010-05-25 EP EP10725839A patent/EP2440685A1/en not_active Withdrawn
- 2010-05-25 WO PCT/GB2010/050856 patent/WO2010142972A1/en not_active Ceased
- 2010-05-25 US US13/318,238 patent/US20120052242A1/en not_active Abandoned
-
2014
- 2014-06-09 US US14/299,238 patent/US20150017339A1/en not_active Abandoned
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000169969A (ja) * | 1998-09-29 | 2000-06-20 | Sekisui Chem Co Ltd | 放電プラズマ処理方法 |
| JP2003059924A (ja) * | 2001-08-17 | 2003-02-28 | Sekisui Chem Co Ltd | 多段型の放電プラズマ処理方法及び装置 |
| WO2007091891A1 (en) * | 2006-02-09 | 2007-08-16 | Fujifilm Manufacturing Europe B.V. | Short pulse atmospheric pressure glow discharge method and apparatus |
| JP2009526129A (ja) * | 2006-02-09 | 2009-07-16 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 短パルス大気圧グロー放電方法及び装置 |
| WO2007139379A1 (en) * | 2006-05-30 | 2007-12-06 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for deposition using pulsed atmospheric pressure glow discharge |
| JP2009538989A (ja) * | 2006-05-30 | 2009-11-12 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | パルス化大気圧グロー放電を使用する堆積の方法及び装置 |
| JP2009540128A (ja) * | 2006-06-16 | 2009-11-19 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置 |
| JP2008085300A (ja) * | 2006-08-29 | 2008-04-10 | Konica Minolta Holdings Inc | 薄膜の成膜方法、薄膜トランジスタの製造方法、および薄膜トランジスタ |
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| Title |
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| JPN7014002088; 本田勝也: 'フラクタル成長界面に対するＫａｒｄａｒ-Ｐａｒｉｓｉ-Ｚｈａｎｇ方程式について（基研研究会 確率モデルの統計力学，研究会報' 物性研究 Ｖｏｌ．８２， Ｎｏ．２, 20040520, ｐ．１９８-２１０, 物性研究刊行会 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7630165B2 (ja) | 2021-07-07 | 2025-02-17 | 国立研究開発法人産業技術総合研究所 | 粗さ解析のための方法及び情報処理システム |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0910040D0 (en) | 2009-07-22 |
| WO2010142972A1 (en) | 2010-12-16 |
| US20150017339A1 (en) | 2015-01-15 |
| EP2440685A1 (en) | 2012-04-18 |
| US20120052242A1 (en) | 2012-03-01 |
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