JP2012529765A - プラズマ付着により成長させた基材構造 - Google Patents

プラズマ付着により成長させた基材構造 Download PDF

Info

Publication number
JP2012529765A
JP2012529765A JP2012514535A JP2012514535A JP2012529765A JP 2012529765 A JP2012529765 A JP 2012529765A JP 2012514535 A JP2012514535 A JP 2012514535A JP 2012514535 A JP2012514535 A JP 2012514535A JP 2012529765 A JP2012529765 A JP 2012529765A
Authority
JP
Japan
Prior art keywords
substrate
index
substrate structure
value
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012514535A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012529765A5 (enExample
Inventor
ヴリーズ，ヒンドリク デ
デ サンデン，モーリティウス ファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Manufacturing Europe BV
Original Assignee
Fujifilm Manufacturing Europe BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Manufacturing Europe BV filed Critical Fujifilm Manufacturing Europe BV
Publication of JP2012529765A publication Critical patent/JP2012529765A/ja
Publication of JP2012529765A5 publication Critical patent/JP2012529765A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2012514535A 2009-06-11 2010-05-25 プラズマ付着により成長させた基材構造 Pending JP2012529765A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0910040.5 2009-06-11
GBGB0910040.5A GB0910040D0 (en) 2009-06-11 2009-06-11 Substrate structure
PCT/GB2010/050856 WO2010142972A1 (en) 2009-06-11 2010-05-25 Substrate structure grown by plasma deposition

Publications (2)

Publication Number Publication Date
JP2012529765A true JP2012529765A (ja) 2012-11-22
JP2012529765A5 JP2012529765A5 (enExample) 2013-07-11

Family

ID=40937232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012514535A Pending JP2012529765A (ja) 2009-06-11 2010-05-25 プラズマ付着により成長させた基材構造

Country Status (5)

Country Link
US (2) US20120052242A1 (enExample)
EP (1) EP2440685A1 (enExample)
JP (1) JP2012529765A (enExample)
GB (1) GB0910040D0 (enExample)
WO (1) WO2010142972A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7630165B2 (ja) 2021-07-07 2025-02-17 国立研究開発法人産業技術総合研究所 粗さ解析のための方法及び情報処理システム

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9460912B2 (en) * 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
GB201210836D0 (en) * 2012-06-19 2012-08-01 Fujifilm Mfg Europe Bv Method and device for manufacturing a barrier layer on a flexible substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169969A (ja) * 1998-09-29 2000-06-20 Sekisui Chem Co Ltd 放電プラズマ処理方法
JP2003059924A (ja) * 2001-08-17 2003-02-28 Sekisui Chem Co Ltd 多段型の放電プラズマ処理方法及び装置
WO2007091891A1 (en) * 2006-02-09 2007-08-16 Fujifilm Manufacturing Europe B.V. Short pulse atmospheric pressure glow discharge method and apparatus
WO2007139379A1 (en) * 2006-05-30 2007-12-06 Fujifilm Manufacturing Europe B.V. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
JP2008085300A (ja) * 2006-08-29 2008-04-10 Konica Minolta Holdings Inc 薄膜の成膜方法、薄膜トランジスタの製造方法、および薄膜トランジスタ
JP2009540128A (ja) * 2006-06-16 2009-11-19 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146724A (en) * 1994-06-06 2000-11-14 The University Of Tennessee Research Corporation One atmosphere uniform glow discharge plasma coating with gas barrier properties
EP1403902A1 (en) * 2002-09-30 2004-03-31 Fuji Photo Film B.V. Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
JP2005104793A (ja) * 2003-10-01 2005-04-21 Nippon Sheet Glass Co Ltd 電波透過熱線反射合わせ構造体およびその製造方法
JP5506401B2 (ja) * 2007-02-13 2014-05-28 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 磁気マスクデバイスを使用する基板プラズマ処理
WO2008147184A2 (en) * 2007-05-25 2008-12-04 Fujifilm Manufacturing Europe B.V. Atmospheric pressure glow discharge plasma method and system using heated substrate
EP2245647B1 (en) * 2008-02-21 2012-08-01 Fujifilm Manufacturing Europe B.V. Method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169969A (ja) * 1998-09-29 2000-06-20 Sekisui Chem Co Ltd 放電プラズマ処理方法
JP2003059924A (ja) * 2001-08-17 2003-02-28 Sekisui Chem Co Ltd 多段型の放電プラズマ処理方法及び装置
WO2007091891A1 (en) * 2006-02-09 2007-08-16 Fujifilm Manufacturing Europe B.V. Short pulse atmospheric pressure glow discharge method and apparatus
JP2009526129A (ja) * 2006-02-09 2009-07-16 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 短パルス大気圧グロー放電方法及び装置
WO2007139379A1 (en) * 2006-05-30 2007-12-06 Fujifilm Manufacturing Europe B.V. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
JP2009538989A (ja) * 2006-05-30 2009-11-12 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． パルス化大気圧グロー放電を使用する堆積の方法及び装置
JP2009540128A (ja) * 2006-06-16 2009-11-19 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
JP2008085300A (ja) * 2006-08-29 2008-04-10 Konica Minolta Holdings Inc 薄膜の成膜方法、薄膜トランジスタの製造方法、および薄膜トランジスタ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN7014002088; 本田勝也: 'フラクタル成長界面に対するＫａｒｄａｒ-Ｐａｒｉｓｉ-Ｚｈａｎｇ方程式について（基研研究会　確率モデルの統計力学，研究会報' 物性研究 Ｖｏｌ．８２，　Ｎｏ．２, 20040520, ｐ．１９８-２１０, 物性研究刊行会 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7630165B2 (ja) 2021-07-07 2025-02-17 国立研究開発法人産業技術総合研究所 粗さ解析のための方法及び情報処理システム

Also Published As

Publication number Publication date
WO2010142972A1 (en) 2010-12-16
GB0910040D0 (en) 2009-07-22
US20120052242A1 (en) 2012-03-01
US20150017339A1 (en) 2015-01-15
EP2440685A1 (en) 2012-04-18

Similar Documents

Publication Publication Date Title
JP5725865B2 (ja) プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法
JP5473946B2 (ja) Ｗｖｔｒバリア性を改善した多層スタック構造体の製造方法
EP2396451B1 (en) Two layer barrier on polymeric substrate
CN105051907A (zh) 多层钝化或蚀刻终止tft
KR20120031160A (ko) 성형체, 그 제조 방법, 전자 디바이스용 부재 및 전자 디바이스
Singh et al. Field-enhanced chemical vapor deposition: new perspectives for thin film growth
JP2013063658A (ja) ガスバリア積層体の製造方法及びガスバリア積層体
TW201529338A (zh) 層合薄膜及撓曲性電子裝置
JPWO2008114627A1 (ja) 防汚性積層体及びディスプレイ用前面板
JP4148759B2 (ja) ガスバリアフィルムの製造方法
US20150017339A1 (en) Substrate Structure Grown By Plasma Deposition
JP2005256061A (ja) 積層体
JP2005272957A (ja) 表面処理方法及び該表面処理方法により表面処理された基材
JPH11256339A (ja) 撥水性コーティング膜、防汚性物品、及び撥水性コーティング膜の製造方法
JP5781350B2 (ja) ガスバリア積層体、その製造方法、電子デバイス用部材及び電子デバイス
JP6888455B2 (ja) ガスバリア性プラスチック容器の製造方法
Lee et al. Characteristics of SiO x Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Using PDMS∕ O2∕ He
US20250250682A1 (en) Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating
US20260043140A1 (en) Decoratively coated polymer substrates and process for obtaining the same
CN118843711A (zh) 气体阻隔膜用材料、氧化硅膜和氧化硅膜的制造方法
CN109415805B (zh) 气体阻隔性膜的制造方法
Shiratani et al. Control of Nanostructure of Plasma CVD Films for Third Generation Photovoltaics
CN120603711A (zh) 层叠体、层叠体的制造方法和带阻气层的偏光板
JP2009120922A (ja) ＳｉＯｘ膜を形成する方法及びＳｉＯｘ膜形成装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130524

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140714

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141010

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141020

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150304

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160212