JP2012527765A5 - - Google Patents

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JP2012527765A5
JP2012527765A5 JP2012511391A JP2012511391A JP2012527765A5 JP 2012527765 A5 JP2012527765 A5 JP 2012527765A5 JP 2012511391 A JP2012511391 A JP 2012511391A JP 2012511391 A JP2012511391 A JP 2012511391A JP 2012527765 A5 JP2012527765 A5 JP 2012527765A5
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pattern data
data
output
pixel
input
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JP2012511391A
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JP2012527765A (ja
JP5801289B2 (ja
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Priority claimed from PCT/IB2010/052180 external-priority patent/WO2010134018A2/en
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JP2012511391A 2009-05-20 2010-05-17 リソグラフシステムのためのパターンデータ変換 Active JP5801289B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US17976509P 2009-05-20 2009-05-20
US17976009P 2009-05-20 2009-05-20
US61/179,765 2009-05-20
US61/179,760 2009-05-20
US25712209P 2009-11-02 2009-11-02
US61/257,122 2009-11-02
PCT/IB2010/052180 WO2010134018A2 (en) 2009-05-20 2010-05-17 Pattern data conversion for lithography system

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JP2012527765A JP2012527765A (ja) 2012-11-08
JP2012527765A5 true JP2012527765A5 (https=) 2013-07-04
JP5801289B2 JP5801289B2 (ja) 2015-10-28

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US (1) US8710465B2 (https=)
EP (1) EP2443647B1 (https=)
JP (1) JP5801289B2 (https=)
KR (1) KR101614460B1 (https=)
CN (1) CN102460633B (https=)
TW (1) TWI485530B (https=)
WO (1) WO2010134018A2 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101414534B (zh) * 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
CN102460632B (zh) * 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
CN102460631B (zh) * 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
US9482963B2 (en) 2010-12-20 2016-11-01 Asml Netherlands B.V. Method of controlling a patterning device in a lithographic apparatus, device manufacturing method and lithographic apparatus
JP5951753B2 (ja) * 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
US9165348B2 (en) * 2011-06-23 2015-10-20 Intel Corporation Stochastic rasterization with selective culling
JP5836773B2 (ja) 2011-11-25 2015-12-24 キヤノン株式会社 描画装置、及び物品の製造方法
NL2009797A (en) * 2011-11-29 2013-05-30 Asml Netherlands Bv Apparatus and method for converting a vector-based representation of a desired device pattern for a lithography apparatus, apparatus and method for providing data to a programmable patterning device, a lithography apparatus and a device manufacturing method.
NL2009817A (en) * 2011-12-06 2013-06-10 Asml Netherlands Bv A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program.
WO2013104482A1 (en) 2012-01-12 2013-07-18 Asml Netherlands B.V. A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method for providing setpoint data and a computer program
US8893059B2 (en) 2012-02-06 2014-11-18 Kla-Tencor Corporation Pattern data system for high-performance maskless electron beam lithography
JP6128744B2 (ja) * 2012-04-04 2017-05-17 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
FR2994749B1 (fr) 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
JP2014049467A (ja) * 2012-08-29 2014-03-17 Canon Inc 描画装置、それを用いた物品の製造方法
US9245714B2 (en) 2012-10-01 2016-01-26 Kla-Tencor Corporation System and method for compressed data transmission in a maskless lithography system
CN102956420B (zh) * 2012-10-30 2016-11-16 中国科学院上海应用物理研究所 电子射线源产生装置及产生低剂量率电子射线的方法
JP6215586B2 (ja) * 2012-11-02 2017-10-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2014110307A (ja) * 2012-11-30 2014-06-12 Canon Inc 描画装置、および、物品の製造方法
JP2014204012A (ja) * 2013-04-05 2014-10-27 キヤノン株式会社 描画装置、及び物品の製造方法
KR20160077116A (ko) 2013-10-22 2016-07-01 어플라이드 머티어리얼스, 인코포레이티드 웹 기반 프로세싱을 위한 마스크리스 리소그래피
US9460260B2 (en) * 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
EP2950325B1 (en) * 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
KR20160049171A (ko) 2014-10-24 2016-05-09 삼성디스플레이 주식회사 마스크리스 노광 장치, 마스크리스 노광 방법 및 이에 의해 제조되는 표시 기판
KR102418581B1 (ko) * 2015-10-21 2022-07-08 삼성전자주식회사 패턴 생성 방법 및 이를 수행하기 위한 패턴 발생기
US10460071B2 (en) * 2015-11-04 2019-10-29 D2S, Inc. Shaped beam lithography including temperature effects
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method
KR102481733B1 (ko) * 2016-09-08 2022-12-29 에이에스엠엘 네델란즈 비.브이. 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작
NL2019502B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
US20180068047A1 (en) 2016-09-08 2018-03-08 Mapper Lithography Ip B.V. Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
CN106444307B (zh) * 2016-09-30 2017-11-21 西安立芯光电科技有限公司 一种用于激光芯片制造中平边补偿对准的光刻方法
EP3355337B8 (en) * 2017-01-27 2024-04-10 IMS Nanofabrication GmbH Advanced dose-level quantization for multibeam-writers
KR102415583B1 (ko) * 2017-06-30 2022-07-04 삼성전자주식회사 Opc 모델의 최적화 방법 및 이를 이용한 반도체 소자의 제조 방법
JP7126367B2 (ja) 2018-03-29 2022-08-26 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10884395B2 (en) * 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
US20240210837A1 (en) * 2022-12-22 2024-06-27 The Hong Kong Polytechnic University Digital ultraviolet lithography method and apparatus
CN115857286A (zh) * 2023-01-10 2023-03-28 广州粤芯半导体技术有限公司 一种曝光方法、装置及电子设备

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
US5363213A (en) * 1992-06-08 1994-11-08 Xerox Corporation Unquantized resolution conversion of bitmap images using error diffusion
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
US6556702B1 (en) * 1999-01-06 2003-04-29 Applied Materials, Inc. Method and apparatus that determines charged particle beam shape codes
US20020104970A1 (en) 1999-01-06 2002-08-08 Winter Stacey J. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
US7064869B2 (en) * 2001-06-22 2006-06-20 Eastman Kodak Company Method for halftoning a multi-channel digital color image having at least one group of similar color channels
US7095484B1 (en) * 2001-06-27 2006-08-22 University Of South Florida Method and apparatus for maskless photolithography
CN1602451A (zh) * 2001-11-07 2005-03-30 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
SE0104238D0 (sv) 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
US7116447B2 (en) * 2002-05-24 2006-10-03 Eastman Kodak Company Halftone dot-growth technique using a dot edge-detection scheme
EP2302457B1 (en) 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithography system
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
DE602004010824T2 (de) 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. Modulator-schaltkreise
CN100451723C (zh) * 2003-11-12 2009-01-14 麦克罗尼克激光系统公司 用于修正slm戳图像缺陷的方法和器件
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US7294440B2 (en) * 2004-07-23 2007-11-13 International Business Machines Corporation Method to selectively correct critical dimension errors in the semiconductor industry
US7477772B2 (en) * 2005-05-31 2009-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression
US7706607B2 (en) * 2005-06-23 2010-04-27 Microsoft Corporation Optimized color image encoding and decoding using color space parameter data
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4745089B2 (ja) * 2006-03-08 2011-08-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム
TWI432908B (zh) 2006-03-10 2014-04-01 瑪波微影Ｉｐ公司 微影系統及投射方法
JP5339671B2 (ja) * 2006-06-26 2013-11-13 株式会社オーク製作所 描画システム
US8259285B2 (en) * 2006-12-14 2012-09-04 Asml Holding N.V. Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data
KR101570974B1 (ko) 2008-02-26 2015-11-23 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
JP5408674B2 (ja) 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8018623B2 (en) * 2008-02-29 2011-09-13 Eastman Kodak Company Multi-level halftoning providing reduced error diffusion artifacts
CN102105960B (zh) 2008-05-23 2014-01-29 迈普尔平版印刷Ip有限公司 成像系统
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
KR101649106B1 (ko) 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조
WO2010063827A1 (en) * 2008-12-05 2010-06-10 Micronic Laser Systems Ab Gradient assisted image resampling in micro-lithographic printing
CN102460631B (zh) 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
US9305747B2 (en) * 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
CN107407595B (zh) 2015-04-03 2018-09-07 株式会社日立高新技术 光量检测装置、利用其的免疫分析装置及电荷粒子束装置

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