JP5801289B2 - リソグラフシステムのためのパターンデータ変換 - Google Patents

リソグラフシステムのためのパターンデータ変換 Download PDF

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Publication number
JP5801289B2
JP5801289B2 JP2012511391A JP2012511391A JP5801289B2 JP 5801289 B2 JP5801289 B2 JP 5801289B2 JP 2012511391 A JP2012511391 A JP 2012511391A JP 2012511391 A JP2012511391 A JP 2012511391A JP 5801289 B2 JP5801289 B2 JP 5801289B2
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pattern data
data
pixel
output
beamlet
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Japanese (ja)
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JP2012527765A5 (https=
JP2012527765A (ja
Inventor
ファン・デ・ペウト、テウニス
ウィーランド、マルコ・ヤン−ヤコ
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012511391A 2009-05-20 2010-05-17 リソグラフシステムのためのパターンデータ変換 Active JP5801289B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US17976509P 2009-05-20 2009-05-20
US17976009P 2009-05-20 2009-05-20
US61/179,765 2009-05-20
US61/179,760 2009-05-20
US25712209P 2009-11-02 2009-11-02
US61/257,122 2009-11-02
PCT/IB2010/052180 WO2010134018A2 (en) 2009-05-20 2010-05-17 Pattern data conversion for lithography system

Publications (3)

Publication Number Publication Date
JP2012527765A JP2012527765A (ja) 2012-11-08
JP2012527765A5 JP2012527765A5 (https=) 2013-07-04
JP5801289B2 true JP5801289B2 (ja) 2015-10-28

Family

ID=43126596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012511391A Active JP5801289B2 (ja) 2009-05-20 2010-05-17 リソグラフシステムのためのパターンデータ変換

Country Status (7)

Country Link
US (1) US8710465B2 (https=)
EP (1) EP2443647B1 (https=)
JP (1) JP5801289B2 (https=)
KR (1) KR101614460B1 (https=)
CN (1) CN102460633B (https=)
TW (1) TWI485530B (https=)
WO (1) WO2010134018A2 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method

Also Published As

Publication number Publication date
WO2010134018A2 (en) 2010-11-25
CN102460633A (zh) 2012-05-16
US20120286173A1 (en) 2012-11-15
WO2010134018A4 (en) 2011-08-25
TWI485530B (zh) 2015-05-21
CN102460633B (zh) 2014-12-17
US8710465B2 (en) 2014-04-29
JP2012527765A (ja) 2012-11-08
WO2010134018A3 (en) 2011-06-23
KR101614460B1 (ko) 2016-04-21
EP2443647A2 (en) 2012-04-25
EP2443647B1 (en) 2016-10-05
TW201107897A (en) 2011-03-01
KR20120030438A (ko) 2012-03-28

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