EP3563199A4 - Fabricating unique chips using a charged particle multi-beamlet lithography system - Google Patents

Fabricating unique chips using a charged particle multi-beamlet lithography system Download PDF

Info

Publication number
EP3563199A4
EP3563199A4 EP17848922.5A EP17848922A EP3563199A4 EP 3563199 A4 EP3563199 A4 EP 3563199A4 EP 17848922 A EP17848922 A EP 17848922A EP 3563199 A4 EP3563199 A4 EP 3563199A4
Authority
EP
European Patent Office
Prior art keywords
charged particle
lithography system
particle multi
beamlet lithography
unique chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17848922.5A
Other languages
German (de)
French (fr)
Other versions
EP3563199A1 (en
Inventor
Marcel Nicolaas Jacobus Van Kervinck
Vincent Sylvester KUIPER
Marco Jan-Jaco Wieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/389,581 external-priority patent/US10079206B2/en
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Priority claimed from PCT/JP2017/033371 external-priority patent/WO2018047985A1/en
Publication of EP3563199A1 publication Critical patent/EP3563199A1/en
Publication of EP3563199A4 publication Critical patent/EP3563199A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/394—Routing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
EP17848922.5A 2016-09-08 2017-09-08 Fabricating unique chips using a charged particle multi-beamlet lithography system Pending EP3563199A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662385049P 2016-09-08 2016-09-08
US201662413470P 2016-10-27 2016-10-27
US15/389,581 US10079206B2 (en) 2016-10-27 2016-12-23 Fabricating unique chips using a charged particle multi-beamlet lithography system
US201762458071P 2017-02-13 2017-02-13
PCT/JP2017/033371 WO2018047985A1 (en) 2016-09-08 2017-09-08 Fabricating unique chips using a charged particle multi-beamlet lithography system

Publications (2)

Publication Number Publication Date
EP3563199A1 EP3563199A1 (en) 2019-11-06
EP3563199A4 true EP3563199A4 (en) 2020-08-19

Family

ID=63258242

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17848922.5A Pending EP3563199A4 (en) 2016-09-08 2017-09-08 Fabricating unique chips using a charged particle multi-beamlet lithography system

Country Status (4)

Country Link
EP (1) EP3563199A4 (en)
JP (1) JP7221198B2 (en)
KR (1) KR102481733B1 (en)
CN (1) CN109923479B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022252707A1 (en) * 2022-02-24 2022-12-08 袁元 Method and apparatus for processing and controlling semiconductor device, and high-energy particle beam photolithography device
WO2024077586A1 (en) * 2022-10-14 2024-04-18 袁元 Machining control method for semiconductor device, and high-energy particle beam lithography device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010046730A1 (en) * 2000-05-26 2001-11-29 Toshio Suzuki Method of designing/manufacturing semiconductor integrated circuit device using combined exposure pattern and semiconductor integrated circuit device
US20140170566A1 (en) * 2010-03-05 2014-06-19 Micronic Mydata AB Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06148867A (en) * 1992-11-04 1994-05-27 New Japan Radio Co Ltd Method for determining photomask pattern
JPH08139208A (en) * 1994-11-04 1996-05-31 Toyota Motor Corp Manufacturing system of non-volatile memory and method of manufacturing the same
JP3469422B2 (en) * 1996-02-23 2003-11-25 株式会社東芝 Charged beam writing method and writing apparatus
US6433347B1 (en) * 1998-06-19 2002-08-13 Nikon Corporation Charged-particle-beam projection-exposure methods and apparatus that selectively expose desired exposure units of a reticle pattern
JP2001109128A (en) * 1999-10-12 2001-04-20 Hitachi Ltd Pattern data forming method for lithography and method for manufacturing semiconductor device and apparatus for manufacturing semiconductor device using the same
SE522531C2 (en) * 1999-11-24 2004-02-17 Micronic Laser Systems Ab Method and apparatus for labeling semiconductors
JP4182515B2 (en) * 2003-05-08 2008-11-19 株式会社オーク製作所 Pattern drawing device
WO2010134018A2 (en) * 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
KR101636523B1 (en) * 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. Dual pass scanning
KR101725299B1 (en) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. Modulation device and charged particle multi-beamlet lithography system using the same
US8884255B2 (en) * 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US20140129997A1 (en) * 2012-11-08 2014-05-08 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US9465906B2 (en) * 2014-04-01 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for integrated circuit manufacturing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010046730A1 (en) * 2000-05-26 2001-11-29 Toshio Suzuki Method of designing/manufacturing semiconductor integrated circuit device using combined exposure pattern and semiconductor integrated circuit device
US20140170566A1 (en) * 2010-03-05 2014-06-19 Micronic Mydata AB Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARKER N W ET AL: "A high throughput electron-beam direct-write lithography system", MICROLITHOGRAPHY WORLD, PENNWELL CORPORATION, US, vol. 9, no. 3, 1 January 2000 (2000-01-01), pages 22, 24 - 25, 30, XP009195346, ISSN: 1074-407X *
See also references of WO2018047985A1 *

Also Published As

Publication number Publication date
JP2019532502A (en) 2019-11-07
KR102481733B1 (en) 2022-12-29
EP3563199A1 (en) 2019-11-06
KR20190046963A (en) 2019-05-07
CN109923479B (en) 2021-11-30
CN109923479A (en) 2019-06-21
JP7221198B2 (en) 2023-02-13

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