KR101614460B1 - 리소그래피 시스템을 위한 패턴 데이터 전환 - Google Patents
리소그래피 시스템을 위한 패턴 데이터 전환 Download PDFInfo
- Publication number
- KR101614460B1 KR101614460B1 KR1020117030536A KR20117030536A KR101614460B1 KR 101614460 B1 KR101614460 B1 KR 101614460B1 KR 1020117030536 A KR1020117030536 A KR 1020117030536A KR 20117030536 A KR20117030536 A KR 20117030536A KR 101614460 B1 KR101614460 B1 KR 101614460B1
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- KR
- South Korea
- Prior art keywords
- pattern data
- target
- exposing
- data
- registration fee
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17976509P | 2009-05-20 | 2009-05-20 | |
| US17976009P | 2009-05-20 | 2009-05-20 | |
| US61/179,765 | 2009-05-20 | ||
| US61/179,760 | 2009-05-20 | ||
| US25712209P | 2009-11-02 | 2009-11-02 | |
| US61/257,122 | 2009-11-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120030438A KR20120030438A (ko) | 2012-03-28 |
| KR101614460B1 true KR101614460B1 (ko) | 2016-04-21 |
Family
ID=43126596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117030536A Active KR101614460B1 (ko) | 2009-05-20 | 2010-05-17 | 리소그래피 시스템을 위한 패턴 데이터 전환 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8710465B2 (https=) |
| EP (1) | EP2443647B1 (https=) |
| JP (1) | JP5801289B2 (https=) |
| KR (1) | KR101614460B1 (https=) |
| CN (1) | CN102460633B (https=) |
| TW (1) | TWI485530B (https=) |
| WO (1) | WO2010134018A2 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003276779A1 (en) * | 2002-10-30 | 2004-05-25 | Mapper Lithography Ip B.V. | Electron beam exposure system |
| EP2433294B1 (en) * | 2009-05-20 | 2016-07-27 | Mapper Lithography IP B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
| KR101757837B1 (ko) * | 2009-05-20 | 2017-07-26 | 마퍼 리쏘그라피 아이피 비.브이. | 듀얼 패스 스캐닝 |
| US9482963B2 (en) | 2010-12-20 | 2016-11-01 | Asml Netherlands B.V. | Method of controlling a patterning device in a lithographic apparatus, device manufacturing method and lithographic apparatus |
| JP5951753B2 (ja) * | 2011-04-22 | 2016-07-13 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル |
| WO2012177282A1 (en) * | 2011-06-23 | 2012-12-27 | Intel Corporation | Stochastic rasterization with selective culling |
| JP5836773B2 (ja) | 2011-11-25 | 2015-12-24 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| WO2013079316A2 (en) * | 2011-11-29 | 2013-06-06 | Asml Netherlands B.V. | Apparatus and method for converting a vector-based representation of a desired device pattern for a lithography apparatus, apparatus and method for providing data to a programmable patterning device, a lithography apparatus and a device manufacturing method |
| JP5881851B2 (ja) | 2011-12-06 | 2016-03-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、セットポイントデータを提供する装置、デバイス製造方法、セットポイントデータの計算方法、およびコンピュータプログラム |
| US9354502B2 (en) | 2012-01-12 | 2016-05-31 | Asml Netherlands B.V. | Lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method for providing setpoint data and a computer program |
| US8893059B2 (en) | 2012-02-06 | 2014-11-18 | Kla-Tencor Corporation | Pattern data system for high-performance maskless electron beam lithography |
| JP6128744B2 (ja) * | 2012-04-04 | 2017-05-17 | キヤノン株式会社 | 描画装置、描画方法、および、物品の製造方法 |
| FR2994749B1 (fr) | 2012-08-24 | 2015-07-24 | Commissariat Energie Atomique | Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants. |
| JP2014049467A (ja) * | 2012-08-29 | 2014-03-17 | Canon Inc | 描画装置、それを用いた物品の製造方法 |
| US9245714B2 (en) | 2012-10-01 | 2016-01-26 | Kla-Tencor Corporation | System and method for compressed data transmission in a maskless lithography system |
| CN102956420B (zh) * | 2012-10-30 | 2016-11-16 | 中国科学院上海应用物理研究所 | 电子射线源产生装置及产生低剂量率电子射线的方法 |
| JP6215586B2 (ja) * | 2012-11-02 | 2017-10-18 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
| JP2014110307A (ja) * | 2012-11-30 | 2014-06-12 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP2014204012A (ja) * | 2013-04-05 | 2014-10-27 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| CN106896647B (zh) * | 2013-10-22 | 2019-05-10 | 应用材料公司 | 用于基于网的处理的无掩模平版印刷 |
| US9460260B2 (en) * | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
| EP2950325B1 (en) * | 2014-05-30 | 2018-11-28 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using overlapping exposure spots |
| US20150372096A1 (en) * | 2014-06-20 | 2015-12-24 | Ishiang Shih | High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications |
| KR20160049171A (ko) | 2014-10-24 | 2016-05-09 | 삼성디스플레이 주식회사 | 마스크리스 노광 장치, 마스크리스 노광 방법 및 이에 의해 제조되는 표시 기판 |
| KR102418581B1 (ko) * | 2015-10-21 | 2022-07-08 | 삼성전자주식회사 | 패턴 생성 방법 및 이를 수행하기 위한 패턴 발생기 |
| US10460071B2 (en) * | 2015-11-04 | 2019-10-29 | D2S, Inc. | Shaped beam lithography including temperature effects |
| US9852876B2 (en) | 2016-02-08 | 2017-12-26 | Nuflare Technology, Inc. | Multi charged particle beam writing apparatus and multi charged particle beam writing method |
| US20180068047A1 (en) | 2016-09-08 | 2018-03-08 | Mapper Lithography Ip B.V. | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| EP3563199A4 (en) * | 2016-09-08 | 2020-08-19 | ASML Netherlands B.V. | PRODUCTION OF UNIQUE CHIPS WITH A LITHOGRAPHY SYSTEM WITH MULTIPLE CARRIER PART JETS |
| NL2019502B1 (en) * | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| CN106444307B (zh) * | 2016-09-30 | 2017-11-21 | 西安立芯光电科技有限公司 | 一种用于激光芯片制造中平边补偿对准的光刻方法 |
| EP3355337B8 (en) * | 2017-01-27 | 2024-04-10 | IMS Nanofabrication GmbH | Advanced dose-level quantization for multibeam-writers |
| KR102415583B1 (ko) | 2017-06-30 | 2022-07-04 | 삼성전자주식회사 | Opc 모델의 최적화 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| JP7126367B2 (ja) | 2018-03-29 | 2022-08-26 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US10593509B2 (en) | 2018-07-17 | 2020-03-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US10483080B1 (en) * | 2018-07-17 | 2019-11-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US10884395B2 (en) * | 2018-12-22 | 2021-01-05 | D2S, Inc. | Method and system of reducing charged particle beam write time |
| KR102919104B1 (ko) | 2020-02-03 | 2026-01-29 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티―빔 라이터의 블러 변화 보정 |
| KR102922552B1 (ko) | 2020-04-24 | 2026-02-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| EP4095882A1 (en) * | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US12500060B2 (en) | 2021-07-14 | 2025-12-16 | Ims Nanofabrication Gmbh | Electromagnetic lens |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
| US20240210837A1 (en) * | 2022-12-22 | 2024-06-27 | The Hong Kong Polytechnic University | Digital ultraviolet lithography method and apparatus |
| CN115857286A (zh) * | 2023-01-10 | 2023-03-28 | 广州粤芯半导体技术有限公司 | 一种曝光方法、装置及电子设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2002091422A2 (en) | 2001-05-08 | 2002-11-14 | Applied Materials, Inc. | Raster shaped beam, electron beam exposure strategy using a two dimensional multiplexel flash field |
| WO2003052516A1 (en) | 2001-12-14 | 2003-06-26 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
| US20060269116A1 (en) * | 2005-05-31 | 2006-11-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression |
| WO2007105939A1 (en) | 2006-03-10 | 2007-09-20 | Mapper Lithography Ip B.V. | Lithography system and projection method |
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| US8445869B2 (en) | 2008-04-15 | 2013-05-21 | Mapper Lithography Ip B.V. | Projection lens arrangement |
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-
2010
- 2010-05-17 WO PCT/IB2010/052180 patent/WO2010134018A2/en not_active Ceased
- 2010-05-17 EP EP10775887.2A patent/EP2443647B1/en active Active
- 2010-05-17 KR KR1020117030536A patent/KR101614460B1/ko active Active
- 2010-05-17 CN CN201080032976.7A patent/CN102460633B/zh active Active
- 2010-05-17 JP JP2012511391A patent/JP5801289B2/ja active Active
- 2010-05-19 TW TW099115882A patent/TWI485530B/zh active
-
2011
- 2011-11-10 US US13/293,426 patent/US8710465B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002091422A2 (en) | 2001-05-08 | 2002-11-14 | Applied Materials, Inc. | Raster shaped beam, electron beam exposure strategy using a two dimensional multiplexel flash field |
| WO2003052516A1 (en) | 2001-12-14 | 2003-06-26 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
| US20060269116A1 (en) * | 2005-05-31 | 2006-11-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression |
| WO2007105939A1 (en) | 2006-03-10 | 2007-09-20 | Mapper Lithography Ip B.V. | Lithography system and projection method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010134018A2 (en) | 2010-11-25 |
| CN102460633A (zh) | 2012-05-16 |
| US20120286173A1 (en) | 2012-11-15 |
| WO2010134018A4 (en) | 2011-08-25 |
| TWI485530B (zh) | 2015-05-21 |
| CN102460633B (zh) | 2014-12-17 |
| US8710465B2 (en) | 2014-04-29 |
| JP2012527765A (ja) | 2012-11-08 |
| WO2010134018A3 (en) | 2011-06-23 |
| EP2443647A2 (en) | 2012-04-25 |
| EP2443647B1 (en) | 2016-10-05 |
| JP5801289B2 (ja) | 2015-10-28 |
| TW201107897A (en) | 2011-03-01 |
| KR20120030438A (ko) | 2012-03-28 |
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