JP2012527763A - Ledのための光散乱及び変換板 - Google Patents
Ledのための光散乱及び変換板 Download PDFInfo
- Publication number
- JP2012527763A JP2012527763A JP2012511387A JP2012511387A JP2012527763A JP 2012527763 A JP2012527763 A JP 2012527763A JP 2012511387 A JP2012511387 A JP 2012511387A JP 2012511387 A JP2012511387 A JP 2012511387A JP 2012527763 A JP2012527763 A JP 2012527763A
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- JP
- Japan
- Prior art keywords
- layer
- lighting
- thickness
- systems
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 33
- 238000000149 argon plasma sintering Methods 0.000 title claims abstract description 18
- 238000005286 illumination Methods 0.000 claims abstract description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910016304 MxSi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Optical Elements Other Than Lenses (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
- Planar Illumination Modules (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09160613.7 | 2009-05-19 | ||
| EP09160613 | 2009-05-19 | ||
| PCT/IB2010/052167 WO2010134011A2 (en) | 2009-05-19 | 2010-05-17 | Light scattering and conversion plate for leds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012527763A true JP2012527763A (ja) | 2012-11-08 |
| JP2012527763A5 JP2012527763A5 (enExample) | 2013-07-04 |
Family
ID=42983411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012511387A Pending JP2012527763A (ja) | 2009-05-19 | 2010-05-17 | Ledのための光散乱及び変換板 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8721098B2 (enExample) |
| EP (1) | EP2436047B1 (enExample) |
| JP (1) | JP2012527763A (enExample) |
| KR (1) | KR101747688B1 (enExample) |
| CN (1) | CN102428583B (enExample) |
| BR (1) | BRPI1007686B1 (enExample) |
| RU (1) | RU2531848C2 (enExample) |
| WO (1) | WO2010134011A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101747688B1 (ko) * | 2009-05-19 | 2017-06-16 | 코닌클리케 필립스 엔.브이. | Led를 위한 광 산란 및 변환판 |
| DE102011012298A1 (de) * | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
| EP2482350A1 (en) * | 2011-02-01 | 2012-08-01 | Koninklijke Philips Electronics N.V. | LED assembly comprising a light scattering layer |
| DE102011050450A1 (de) * | 2011-05-18 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| EP2955764A4 (en) * | 2013-02-06 | 2016-10-05 | Koito Mfg Co Ltd | LIGHT-EMITTING MODULE |
| CN105776869A (zh) * | 2014-12-17 | 2016-07-20 | 黄更生 | 一种激发白光led灯用玻璃陶瓷 |
| CN107805496A (zh) * | 2017-10-24 | 2018-03-16 | 彩虹集团新能源股份有限公司 | 一种led灯用扩散膜材料的制备方法 |
| WO2020244857A1 (en) * | 2019-06-05 | 2020-12-10 | Lumileds Holding B.V. | Bonding of phosphor converter emitters |
| EP3991209A1 (en) | 2019-06-25 | 2022-05-04 | Lumileds LLC | Phosphor layer for micro-led applications |
| US11177420B2 (en) | 2019-10-09 | 2021-11-16 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| US11411146B2 (en) | 2020-10-08 | 2022-08-09 | Lumileds Llc | Protection layer for a light emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007083907A1 (en) * | 2006-01-17 | 2007-07-26 | Lucimea Co., Ltd. | Sheet type phosphors, preparation method thereof, and light emitting devices using these phosphors |
| JP2007258228A (ja) * | 2006-03-20 | 2007-10-04 | Ngk Insulators Ltd | 発光ダイオード素子用拡散板、発光ダイオード素子用拡散板構造および発光ダイオード装置 |
| JP2007335798A (ja) * | 2006-06-19 | 2007-12-27 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2008502131A (ja) * | 2004-06-03 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置用の発光セラミック |
| JP2008166740A (ja) * | 2006-11-28 | 2008-07-17 | Cree Inc | 固体発光ダイの光学的プリフォーム並びにその作製および組み立ての方法及びシステム |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5695809A (en) | 1995-11-14 | 1997-12-09 | Micron Display Technology, Inc. | Sol-gel phosphors |
| US6696703B2 (en) | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
| US7554258B2 (en) * | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
| DE10351349A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
| EP1797594A2 (en) | 2004-09-28 | 2007-06-20 | Philips Intellectual Property & Standards GmbH | Light emitting device with improved conversion layer |
| CN1988188A (zh) | 2005-12-23 | 2007-06-27 | 香港应用科技研究院有限公司 | 具有荧光层结构的发光二极管晶粒及其制造方法 |
| RU2407110C2 (ru) * | 2006-01-24 | 2010-12-20 | Конинклейке Филипс Электроникс Н.В. | Светоизлучающее устройство |
| ATE542248T1 (de) | 2006-03-21 | 2012-02-15 | Koninkl Philips Electronics Nv | Elektrolumineszenz-gerät |
| US7285791B2 (en) | 2006-03-24 | 2007-10-23 | Goldeneye, Inc. | Wavelength conversion chip for use in solid-state lighting and method for making same |
| CN101467266A (zh) | 2006-06-08 | 2009-06-24 | 皇家飞利浦电子股份有限公司 | 发光器件 |
| JP2008103599A (ja) * | 2006-10-20 | 2008-05-01 | Toyoda Gosei Co Ltd | 発光装置 |
| US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
| US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
| DE102006061175A1 (de) | 2006-12-22 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren |
| JP5347354B2 (ja) | 2007-09-18 | 2013-11-20 | 日亜化学工業株式会社 | 蛍光物質成形体及びその製造方法、発光装置 |
| CN101463975A (zh) * | 2007-12-19 | 2009-06-24 | 富士迈半导体精密工业(上海)有限公司 | 固态光源装置 |
| CN101577297A (zh) * | 2008-05-09 | 2009-11-11 | 旭丽电子(广州)有限公司 | 发光封装结构及其制造方法 |
| RU84626U1 (ru) * | 2008-07-23 | 2009-07-10 | Закрытое Акционерное Общество "Протон-Импульс" (ЗАО "Протон-Импульс") | Полупроводниковый излучатель |
| US8083364B2 (en) * | 2008-12-29 | 2011-12-27 | Osram Sylvania Inc. | Remote phosphor LED illumination system |
| KR101747688B1 (ko) * | 2009-05-19 | 2017-06-16 | 코닌클리케 필립스 엔.브이. | Led를 위한 광 산란 및 변환판 |
| US8415692B2 (en) * | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
| US8547009B2 (en) * | 2009-07-10 | 2013-10-01 | Cree, Inc. | Lighting structures including diffuser particles comprising phosphor host materials |
| US8723409B2 (en) * | 2010-04-07 | 2014-05-13 | Nichia Corporation | Light emitting device |
-
2010
- 2010-05-17 KR KR1020117030162A patent/KR101747688B1/ko active Active
- 2010-05-17 RU RU2011151606/28A patent/RU2531848C2/ru active
- 2010-05-17 WO PCT/IB2010/052167 patent/WO2010134011A2/en not_active Ceased
- 2010-05-17 CN CN201080021909.5A patent/CN102428583B/zh active Active
- 2010-05-17 US US13/320,803 patent/US8721098B2/en active Active
- 2010-05-17 EP EP10726270.1A patent/EP2436047B1/en active Active
- 2010-05-17 JP JP2012511387A patent/JP2012527763A/ja active Pending
- 2010-05-17 BR BRPI1007686-7A patent/BRPI1007686B1/pt active IP Right Grant
-
2014
- 2014-03-25 US US14/224,120 patent/US9482411B2/en active Active
-
2016
- 2016-10-28 US US15/337,435 patent/US9966512B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008502131A (ja) * | 2004-06-03 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置用の発光セラミック |
| WO2007083907A1 (en) * | 2006-01-17 | 2007-07-26 | Lucimea Co., Ltd. | Sheet type phosphors, preparation method thereof, and light emitting devices using these phosphors |
| JP2007258228A (ja) * | 2006-03-20 | 2007-10-04 | Ngk Insulators Ltd | 発光ダイオード素子用拡散板、発光ダイオード素子用拡散板構造および発光ダイオード装置 |
| JP2007335798A (ja) * | 2006-06-19 | 2007-12-27 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2008166740A (ja) * | 2006-11-28 | 2008-07-17 | Cree Inc | 固体発光ダイの光学的プリフォーム並びにその作製および組み立ての方法及びシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| US9966512B2 (en) | 2018-05-08 |
| US20120069546A1 (en) | 2012-03-22 |
| RU2011151606A (ru) | 2013-06-27 |
| US20170047491A1 (en) | 2017-02-16 |
| EP2436047B1 (en) | 2013-10-09 |
| KR101747688B1 (ko) | 2017-06-16 |
| BRPI1007686A2 (pt) | 2016-12-27 |
| BRPI1007686B1 (pt) | 2019-11-05 |
| RU2531848C2 (ru) | 2014-10-27 |
| WO2010134011A2 (en) | 2010-11-25 |
| CN102428583B (zh) | 2015-06-03 |
| KR20120030425A (ko) | 2012-03-28 |
| WO2010134011A3 (en) | 2011-01-13 |
| US8721098B2 (en) | 2014-05-13 |
| EP2436047A2 (en) | 2012-04-04 |
| CN102428583A (zh) | 2012-04-25 |
| US20140204593A1 (en) | 2014-07-24 |
| US9482411B2 (en) | 2016-11-01 |
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