200928173 .九、發明說明： 【發明所屬之技術領域】 ' 本發明涉及一種固態光源裝置，特別係一種發光二極 - 體光源裝置。 【先前技術】 目前，發光二極體（Light Emitting Diode，LED)作為一 種固態照明裝置，因其具光質佳（亦即光源輸出的光譜）及發 光效率高等特性而逐漸取代冷陰極螢光燈（Cold Cathode ❹ Fluorescent Lamp，CCFL)作為照明裝置之發光元件，具體可 參見 Michael S. Shur 等人於文獻 Proceedings of the IEEE， Vol· 93，No. 10 (2005 年 10 月）中發表的 “Solid-State Lighting: Toward Superior Illumination” 一文。 發光二極體作為照明光源時，通常需要較高的演色性 (即CRI大於90)。一種具有較高演色性之發光二極體，其 包括一個藍光發光二極體晶片、一個紅光發光二極體晶 片，以及一個覆蓋該藍光發光二極體晶片與紅光發光二極 ® 體晶片之封裝體，該封裝體中含有黃色螢光粉。 該藍光發光二極體晶片與紅光發光二極體晶片採用不 同的發光一極體晶片’即該藍光發光二極體晶片為GaN糸 發光·一極體晶片，而紅光發光二極體晶片為A1 GalnP糸發 光二極體晶片，所以，當該藍光發光二極體晶片與紅光發 光二極體晶片的溫度上升時，其光衰減程度不同，即紅光 發光二極體晶片之光衰減程度較大，造成該發光二極體發 出的光的色溫偏藍（Blue-shift)，進而導致該發光二極體所 200928173 發出的白光之色溫穩定性較差。 • 有鑑於此，有必要提供一種出射光之色溫穩定性較好 的固態光源裝置。 【發明内容】 以下將以實施例說明一種出射光之色溫穩定性較好的 固態光源裝置。 一種固態光源裝置，其包括一本體’該本體上設置有 第一容置槽、第二容置槽及第三容置槽；一設置於該第一 ®谷置槽中之第一發光單元，其包括第一固態發光晶片及覆 蓋該弟一固態發光晶片之第一填充層，·一設置於該第二容 置槽中之第二發光單元，其包括第二固態發光晶片及覆蓋 該第二固態發光晶片之第二填充層；一設置於該第三容置 槽中之第三發光單元’其包括第三固態發光晶片及覆蓋該 第三固態發光晶片之第三填充層；該第一固態發光晶片、 第一固態發光晶片及第三固態發光晶片為同色光之固態發 ❽光晶片，該第一填充層、第二填充層及第三填充層中至少 兩者含有各自不同的螢光粉，經由該第一填充層、第二填 充層及第三填充層出射的光混光後形成一白光。 相對於先前技術’所述固態光源裝置中包括均為同色 光的固態發光晶片之第一固態發光晶片、第二固態發光晶 片及第三固態發光晶片’所以該第一固態發光晶片、第二 固態發光晶片及第三固態發光晶片之光衰減程度基本相 同’使得該固態光源裝置發出的白光之色溫受溫度的影響 較小’即該固態光源裝置發出的白光之色溫穩定性較好。 9 200928173 【實施方式】 下面結合附圖對本發明作進一步的詳細說明。 請參見圖1，本發明第一實施例提供之固態光源裝置 ' 10,其包括一本體11，一第一發光單元12, 一第二發光單 元13及一第三發光單元14。 該本體11上具有並列設置之第一容置槽110，第二容 置槽112及第三容置槽114。該第一發光單元12，第二發 光單元13及第三發光單元14分別設置於該第一容置槽 ❹ 110，第二容置槽112及第三容置槽114中。該第一容置槽 110，第二容置槽112及第三容置槽114均為錐形，且其開 口分別沿遠離其底部的方向逐漸變大。 該本體11所用材質為銅、鋁等金屬，氮化鋁、三氧化 二鋁、氧化鈹等陶瓷材質，以及矽等。該本體Π可與外部 電源相連，從而給該第一發光單元12，第二發光單元13 及第三發光單元14提供電能，另，還可將該第一發光單元 於12，第二發光單元13及第三發光單元14發光時所產生的 ❹ 熱量傳導出該固態光源裝置10。 該第一發光單元12包括第一固態發光晶片121及覆蓋 該第一固態發光晶片121之第一填充層122。該第二發光單 元13包括第二固態發光晶片131及覆蓋該第二固態發光晶 片131之第二填充層132。該第三發光單元14包括第三固 態發光晶片141及覆蓋該第三固態發光晶片141之第三填 充層142。該第一固態發光晶片121，該第二固態發光晶片 131及該第三固態發光晶片141分別設置於該第一容置槽 10 200928173 110，第二容置槽112及第三容置槽113之底部，且均與該 本體11電連接。於本實施例中，該第一固態發光晶片121， ' 該第二固態發光晶片131及該第三固態發光晶片141均為 ^ 發光二極體晶片。 該第一固態發光晶片121，第二固.態發光晶片131及第 三固態發光晶片141為同色光的固態發光晶片，例如GaN 系固態發光晶片或AlGaN系固態發光晶片，所以其光衰減 程度基本相同，使得該固態光源裝置10發出的白光之色溫 ❿受溫度的影響較小，即該固態光源裝置10發出的白光之色 溫穩定性較好。另，若該第一固態發光晶片121，第二固態 發光晶片131及第三固態發光晶片141均為GaN系固態發 光晶片或AlGaN系固態發光晶片，所以當溫度上升時，其 發光效率可保持在較為穩定的狀態。 於本實施例中，該第一固態發光晶片121，第二固態發 光晶片131及第三固態發光晶片141均為紫外光固態發光 ©晶片，其分別與第一電源101，第二電源102及第三電源 103形成電連接。由該第一電源101，第二電源102及第三 電源103分別對該第一固態發光晶片121，第二固態發光晶 片131及第三固態發光晶片141之電壓及電流進行獨立控 制。 該第一填充層122可包括第一透明基材1220及均勻分 佈於該第一透明基材1220中之第一螢光粉1222。該第一透 明基材1220之材質可選用矽膠、樹脂等透光材質。於本實 施例中，該第一透明基材1220所用材質為矽膠，其折射率 11 200928173 大於1.4。該第一營光粉1229, 可me 為紅先螢光粉，其受光激發 中心波長乾圍為㈣〜645奈求之紅光。該紅光螢光 叔可為氮化物、矽酸鹽、氧化物或硫化物等。 該帛二填充層132可包括第二透明基材咖及均句分 佈於該第二透明基材⑽中之第二榮光粉1322。該第二透 明基材mo之材質可選用石夕膠、樹脂等透光材質。該第二 營光粉1322為綠光螢光粉，盆爲本如 、 赏尤物其又先激發可發出中心波長範200928173. Nine, invention description: [Technical field to which the invention pertains] The present invention relates to a solid-state light source device, and more particularly to a light-emitting diode-body light source device. [Prior Art] At present, Light Emitting Diode (LED) as a solid-state lighting device gradually replaces the cold cathode fluorescent lamp because of its good light quality (that is, the spectrum of the light source output) and high luminous efficiency. (Cold Cathode ❹ Fluorescent Lamp, CCFL) as a illuminating component of a lighting device, see "Solid" by Michael S. Shur et al., Proceedings of the IEEE, Vol. 93, No. 10 (October 2005). -State Lighting: Toward Superior Illumination" article. When a light-emitting diode is used as an illumination source, it generally requires a higher color rendering (i.e., a CRI greater than 90). A light-emitting diode having higher color rendering, comprising a blue light-emitting diode chip, a red light-emitting diode chip, and a blue light-emitting diode chip and a red light-emitting diode chip The package contains yellow phosphor powder. The blue light-emitting diode chip and the red light-emitting diode chip use different light-emitting diode chips, that is, the blue light-emitting diode chip is a GaN light-emitting one-pole wafer, and the red light-emitting diode chip It is an A1 GalnP糸 light-emitting diode chip. Therefore, when the temperature of the blue light-emitting diode chip and the red light-emitting diode chip rises, the degree of light attenuation is different, that is, the light attenuation of the red light-emitting diode chip. To a greater extent, the color temperature of the light emitted by the light-emitting diode is blue-shift, which in turn causes the color temperature stability of the white light emitted by the light-emitting diode 200928173 to be poor. • In view of this, it is necessary to provide a solid-state light source device with better color temperature stability of the emitted light. SUMMARY OF THE INVENTION A solid-state light source device having excellent color temperature stability of emitted light will be described below by way of examples. A solid-state light source device includes a body having a first accommodating groove, a second accommodating groove and a third accommodating groove; and a first illuminating unit disposed in the first valving groove, The first solid-state light-emitting chip and the first filling layer covering the first solid-state light-emitting chip, the second light-emitting unit disposed in the second receiving groove, including the second solid-state light-emitting chip and covering the second a second filling layer of the solid state light emitting chip; a third light emitting unit disposed in the third receiving groove, comprising a third solid state light emitting chip and a third filling layer covering the third solid state light emitting chip; the first solid state The light emitting chip, the first solid state light emitting chip and the third solid state light emitting chip are solid-state light-emitting wafers of the same color, and at least two of the first filling layer, the second filling layer and the third filling layer contain different phosphor powders. The light emitted through the first filling layer, the second filling layer and the third filling layer is mixed to form a white light. The first solid state light emitting chip, the second solid state light emitting chip, the second solid state light emitting chip, and the third solid state light emitting chip are included in the solid state light source device of the prior art. The light attenuation level of the light-emitting chip and the third solid-state light-emitting chip is substantially the same 'the color temperature of the white light emitted by the solid-state light source device is less affected by the temperature', that is, the color temperature stability of the white light emitted by the solid-state light source device is better. 9 200928173 [Embodiment] The present invention will be further described in detail below with reference to the accompanying drawings. Referring to FIG. 1, a solid-state light source device 10 according to a first embodiment of the present invention includes a body 11, a first light-emitting unit 12, a second light-emitting unit 13, and a third light-emitting unit 14. The main body 11 has a first accommodating groove 110, a second accommodating groove 112 and a third accommodating groove 114. The first light-emitting unit 12, the second light-emitting unit 13 and the third light-emitting unit 14 are respectively disposed in the first accommodating groove 110, the second accommodating groove 112 and the third accommodating groove 114. The first accommodating groove 110, the second accommodating groove 112 and the third accommodating groove 114 are both tapered, and the openings thereof are gradually enlarged in a direction away from the bottom thereof. The material used for the body 11 is a metal such as copper or aluminum, a ceramic material such as aluminum nitride, aluminum oxide or cerium oxide, and tantalum. The main body 相连 can be connected to an external power source to supply power to the first illuminating unit 12, the second illuminating unit 13 and the third illuminating unit 14. The first illuminating unit can also be 12, and the second illuminating unit 13 The heat generated by the third light-emitting unit 14 when it emits light is conducted out of the solid-state light source device 10. The first light emitting unit 12 includes a first solid state light emitting chip 121 and a first filling layer 122 covering the first solid state light emitting chip 121. The second light emitting unit 13 includes a second solid state light emitting chip 131 and a second filling layer 132 covering the second solid state light emitting film 131. The third light emitting unit 14 includes a third solid state light emitting chip 141 and a third filling layer 142 covering the third solid state light emitting chip 141. The first solid-state light-emitting chip 121, the second solid-state light-emitting chip 131 and the third solid-state light-emitting chip 141 are respectively disposed in the first accommodating groove 10 200928173 110, the second accommodating groove 112 and the third accommodating groove 113. The bottom portion is electrically connected to the body 11. In this embodiment, the first solid state light emitting chip 121, 'the second solid state light emitting chip 131 and the third solid state light emitting chip 141 are both light emitting diode chips. The first solid state light emitting chip 121, the second solid state light emitting chip 131 and the third solid state light emitting chip 141 are solid color light emitting chips of the same color, such as a GaN solid state light emitting chip or an AlGaN solid state light emitting chip, so that the degree of light attenuation is basically Similarly, the color temperature of the white light emitted by the solid-state light source device 10 is less affected by the temperature, that is, the color temperature of the white light emitted by the solid-state light source device 10 is better. In addition, if the first solid-state light-emitting wafer 121, the second solid-state light-emitting chip 131, and the third solid-state light-emitting chip 141 are both GaN-based solid-state light-emitting wafers or AlGaN-based solid-state light-emitting chips, the luminous efficiency can be maintained when the temperature rises. More stable state. In this embodiment, the first solid-state light-emitting chip 121, the second solid-state light-emitting chip 131, and the third solid-state light-emitting chip 141 are both ultraviolet light solid-state light-emitting wafers, respectively, and the first power source 101, the second power source 102, and the first The three power sources 103 form an electrical connection. The voltages and currents of the first solid state light emitting chip 121, the second solid state light emitting chip 131, and the third solid state light emitting chip 141 are independently controlled by the first power source 101, the second power source 102, and the third power source 103, respectively. The first filling layer 122 can include a first transparent substrate 1220 and a first phosphor powder 1222 evenly distributed in the first transparent substrate 1220. The material of the first transparent substrate 1220 may be made of a light-transmitting material such as silicone or resin. In the present embodiment, the first transparent substrate 1220 is made of silicone, and its refractive index 11 200928173 is greater than 1.4. The first camp light powder 1229, can be red first fluorescent powder, which is excited by the center wavelength of the light excitation (four) ~ 645 Naiqiu red light. The red fluorescent light may be a nitride, a cerium salt, an oxide or a sulfide. The second filling layer 132 may include a second transparent substrate and a second glare 1322 distributed uniformly in the second transparent substrate (10). The material of the second transparent substrate mo may be made of a light transmissive material such as Shixia glue or resin. The second battalion powder 1322 is a green fluorescing powder, and the basin is based on the sacred object.
Q 圍為505〜540奈米之綠光。該綠光螢光粉可為氮化物、矽 Z或氧化物等。該第二螢光粉助亦可為黃光榮光粉， 八叉光激發可發出中心波長範圍為55〇〜6〇〇奈米之黃光。 該第三填充層M2包括第三透明基材142〇及均勻分佈 於該第三透明基材142〇中之第三螢光粉1422。該第三透明 基材1420之材質可選用矽膠、樹脂等透光材質。該第三螢 光粉1422為藍光營光粉，其受光激發可發出中心波長範圍 為445〜475奈米之藍光。該藍㈣㈣可為氮化物、石夕酸 鹽或氧化物等。 ★該第一發光二極體晶片121，第二發光二極體晶片Hi 及第三發光二極體晶片141電性獨立，即由該第一電源 101，第二電源、102及第三m〇3分別對其電壓及電流進 行獨立控制。於本實施例中，該第一電源101，第二電源 102及第三電源103分別對該第一固態發光晶片12卜第二 固態發光晶片131及第三固態發光晶片141施加相同的電 壓以使其發出紫外光。該第一填充層122中之第一螢光粉 1222於該第一固態發光晶片121發出的紫外光的激發下發 12 200928173 出紅光。該第二填充層132中之第二螢光粉1322於該第二 固態發光晶片131發出的紫外光的激發下發出綠光或黃 • 光。該第三填充層142中之第三螢光粉1422於該第三固態 ’ 發光晶片141發出的紫外光的激發下發出藍光。由於該第 一電源101，第二電源102及第三電源.103可分別對該第一 固態發光晶片121，第二固態發光晶片131及第三固態發光 晶片141的電流進行控制，進而分別對經由該第一填充層 122、第二填充層132及第三填充層142出射的紅光、綠光 ❹或黃光、藍光之色溫進行調節，所以該紅光、綠光及藍光 混光後產生的白光，或者紅光、黃光及藍光混光後產生白 光具有較高的演色性，能夠適應不同的實際需求。 另，紫外光固態發光晶片與螢光粉組合的半高寬（FullQ is surrounded by green light of 505~540 nm. The green phosphor may be a nitride, yttrium Z or an oxide or the like. The second fluorescent powder can also be yellow glory powder, and the octagonal light excitation can emit yellow light with a central wavelength range of 55 〇 to 6 〇〇 nanometer. The third filling layer M2 includes a third transparent substrate 142 and a third phosphor 1422 uniformly distributed in the third transparent substrate 142. The material of the third transparent substrate 1420 may be made of a light-transmitting material such as silicone or resin. The third phosphor powder 1422 is a blue light camping powder which is excited by light to emit blue light having a central wavelength range of 445 to 475 nm. The blue (four) (four) may be a nitride, a salt or an oxide. The first light emitting diode chip 121, the second light emitting diode chip Hi and the third light emitting diode chip 141 are electrically independent, that is, the first power source 101, the second power source, 102 and the third m〇 3 independently control its voltage and current. In this embodiment, the first power source 101, the second power source 102, and the third power source 103 respectively apply the same voltage to the first solid state light emitting chip 12, the second solid state light emitting chip 131, and the third solid state light emitting chip 141. It emits ultraviolet light. The first phosphor powder 1222 in the first filling layer 122 is emitted by the ultraviolet light emitted from the first solid-state light-emitting chip 121. The second phosphor powder 1322 in the second filling layer 132 emits green light or yellow light under the excitation of ultraviolet light emitted from the second solid-state light-emitting chip 131. The third phosphor powder 1422 of the third filling layer 142 emits blue light under the excitation of ultraviolet light emitted from the third solid-state light-emitting wafer 141. The first power source 101, the second power source 102, and the third power source 103 can control the currents of the first solid state light emitting chip 121, the second solid state light emitting chip 131, and the third solid state light emitting chip 141, respectively. The color temperatures of the red, green, or yellow, and blue light emitted by the first filling layer 122, the second filling layer 132, and the third filling layer 142 are adjusted, so that the red, green, and blue light are mixed. White light, or red light, yellow light and blue light, produce white light with high color rendering, which can adapt to different practical needs. In addition, the full width at half maximum of the combination of the ultraviolet light solid state light emitting chip and the phosphor powder (Full
Width & Half Max，FWHM)比多種單色固態發光晶片組合 (例如，紅光二極體晶片、綠光二極體晶片與藍光二極體晶 片之組合）之半高寬大，因此，紫外光固態發光晶片與螢光 _ 粉組合所發出的光之演色性更好。例如，紅光發光二極體 ❿ 之FWHM約為20奈米，而紫外光固態發光晶片與紅光螢 光粉組合之FWHM則可達到至少45奈米。 請參見圖2,本發明第二實施例提供之固態光源裝置 20,其與上述第一實施例所提供之固態光源裝置10基本相 同，不同之處在於：該固態光源裝置20進一步包括一散射 層28,該散射層28設置於該第一容置槽110,第二容置槽 112及第三容置槽114上。 該散射層28可包括第四透明基材281及均勻分佈於該 13 200928173 第四透明基材281中之散射粒子282。該第四透明基材281 之材質可選用矽膠、樹脂等透光材質，其折射率小於或等 ' 於上述第一透明基材1220之折射率。該散射粒子282所用 ’ 材質可為二氧化鈦（Ti02)、塑膠、PMMA、熔融石英（Fused Silica)、三氧化二鋁（Al2〇3)、氧化鎂（MgO)、矽鋁氧氮聚合 物（Sialon)或其他透明氮氧化物，其用於散射由該第一填充 層122射出之紅光、由該第二填充層132射出之綠光或黃 光，以及由該第三填充層142射出之藍光，從而進一步提 ❿高該固態光源裝置20之出光均勻性。 請參見圖3,本發明第三實施例提供之固態光源裝置 30,其與上述第二實施例所提供之固態光源裝置20基本相 同，不同之處在於： 第一固態發光晶片321，第二固態發光晶片331及第三 固態發光晶片341均為藍光固態發光晶片，其可發出中心 波長範圍為450〜470奈米之藍光； 第三填充層342僅包括第三透明基材； ❿ 該固態光源裝置30進一步包括一光學微結構層39,該 光學微結構層39設置於填充層28的遠離第一容置槽110, 第二容置槽112及第三容置槽114的一側。 該光學微結構層39具有一遠離該填充層28之出光面 391，該出光面391上具有多個光學微結構392。請參見圖 4，該多個光學微結構392為多個平行排布的棱鏡。請參見 圖5，該多個光學微結構392為多個陣列排布的錐形凸起， 其尖端遠離該填充層28。該光學微結構392所用材質為 14 200928173 PMMA、塑膠或透明玻璃，其用於對經由該出光面391出 射的光線進行混光以及改變該固態光源裝置30射出光的場 形。 ' 可理解的是，該固態光源裝置30之光學微結構層39 與該第一容置槽110,第二容置槽112.及第三容置槽114之 間可以不需要設置填充層28,該光學微結構層39與該第一 容置槽110,第二容置槽112及第三容置槽114之間亦可填 充有空氣等氣體。該光學微結構層39亦可應用於第一實施 © 例所提供之固態光源裝置10。 於本實施例中，第一電源101，第二電源102及第三電 源103分別對該第一固態發光晶片321，第二固態發光晶片 331及第三固態發光晶片341施加相同的電壓以使其發出 藍光。第一填充層122中之第一螢光粉1222於該第一固態 發光晶片321發出的藍光的激發下發出紅光。第二填充層 132中之第二螢光粉1322於該第二固態發光晶片331發出 P 的藍光的激發下發出綠光或黃光。該第三固態發光晶片341 發出的藍光直接經由該第三填充層342射出。由於該第一 電源101，第二電源102及第三電源103可分別對該第一固 態發光晶片321，第二固態發光晶片331及第三固態發光晶 片341的電流進行控制，進而分別對經由該第一填充層 122、第二填充層132及第三填充層342出射的紅光、綠光 或黃光、藍光之色溫進行調節，所以該紅光、綠光與藍光 混光後產生的白光，或者紅光、黃光與藍光混光後產生白 光具有較高的演色性，能夠適應不同的實際需求。 15 200928173 綜上所述，本發明確已符合發明專利之要件， ，出專射請。惟，以上所述者僅為本發明之較佳實= 式’自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化，= 應涵蓋於以下申請專利範圍内。 白 【圖式簡單說明】 圖1係本發明第-實施例提供之固態光源裝置之剖面 不意圖。 Ο 一圖2係本發明第二實施例提供之固態光源裝置之剖面 示意圖。 一圖3係本發明第三實施例提供之固態光源裝置之剖面 不·5圖〇 圖4係圖3中固態光源裝置之光學微結構層之部分截 面示意圖。 社圖5係圖3中固態光源裝置之具有錐形凸起之光學微 ❾結構層之部分截面示意圖。 【主要元件符號說明】 固態光源裝置 10, 20, 30 本體 11 第一發光單元 12 弟二發光單元 13 第三發光單元 14 第一容置槽 110 第二容置槽 112 16 200928173 第三容置槽 114 第一固態發光晶片 121, 321 " 第一填充層 122 ' 第二固態發光晶片 131，331 第二填充層 132. 第三固態發光晶片 141, 341 第三填充層 142, 342 第一電源 101 ❹ 第二電源 102 第三電源 103 第一透明基材 1220 第一螢光粉 1222 第二透明基材 1320 第二螢光粉 1322 第三透明基材 1420 第三螢光粉 ❿ 散射層 1422 28 第四透明基材 281 散射粒子 282 光學微結構層 39 出光面 391 光學微結構 392 17Width & Half Max, FWHM) is a combination of multiple monochromatic solid-state light-emitting wafers (for example, a combination of a red photodiode wafer, a green photodiode wafer, and a blue LED chip), so the UV light solid state The color of the light emitted by the combination of the luminescent wafer and the phosphor _ powder is better. For example, the FWHM of a red light emitting diode is about 20 nm, and the FWHM of an ultraviolet solid state light emitting chip combined with a red phosphor can reach at least 45 nm. Referring to FIG. 2, a solid-state light source device 20 according to a second embodiment of the present invention is substantially the same as the solid-state light source device 10 provided in the first embodiment, except that the solid-state light source device 20 further includes a scattering layer. The scattering layer 28 is disposed on the first accommodating groove 110, the second accommodating groove 112 and the third accommodating groove 114. The scattering layer 28 can include a fourth transparent substrate 281 and scattering particles 282 uniformly distributed in the fourth transparent substrate 281 of the 13 200928173. The material of the fourth transparent substrate 281 may be selected from a light-transmitting material such as silicone or resin, and the refractive index thereof is less than or equal to the refractive index of the first transparent substrate 1220. The material used for the scattering particles 282 can be titanium dioxide (Ti02), plastic, PMMA, fused silica (Fused Silica), aluminum oxide (Al2〇3), magnesium oxide (MgO), yttrium aluminum oxynitride polymer (Sialon). Or other transparent oxynitride for scattering red light emitted by the first filling layer 122, green or yellow light emitted by the second filling layer 132, and blue light emitted by the third filling layer 142, Thereby, the light uniformity of the solid-state light source device 20 is further improved. Referring to FIG. 3, a solid-state light source device 30 according to a third embodiment of the present invention is substantially the same as the solid-state light source device 20 provided in the second embodiment, except that: the first solid-state light-emitting chip 321 and the second solid state The illuminating wafer 331 and the third solid-state illuminating wafer 341 are all blue-light solid-state illuminating wafers, which emit blue light having a central wavelength range of 450 to 470 nm; the third filling layer 342 includes only a third transparent substrate; ❿ the solid-state light source device The optical micro-structure layer 39 further includes an optical micro-structure layer 39 disposed on a side of the filling layer 28 away from the first accommodating groove 110, the second accommodating groove 112, and the third accommodating groove 114. The optical microstructure layer 39 has a light exit surface 391 away from the fill layer 28, and the light exit surface 391 has a plurality of optical microstructures 392 thereon. Referring to Figure 4, the plurality of optical microstructures 392 are a plurality of prisms arranged in parallel. Referring to FIG. 5, the plurality of optical microstructures 392 are a plurality of arrays of tapered protrusions with their tips away from the filling layer 28. The optical microstructure 392 is made of 14 200928173 PMMA, plastic or transparent glass for mixing light rays emitted through the light-emitting surface 391 and changing the field of light emitted by the solid-state light source device 30. It is understood that the filling layer 28 may not need to be disposed between the optical microstructure layer 39 of the solid-state light source device 30 and the first accommodating groove 110, the second accommodating groove 112, and the third accommodating groove 114. The optical microstructure layer 39 and the first accommodating groove 110, the second accommodating groove 112, and the third accommodating groove 114 may be filled with a gas such as air. The optical microstructure layer 39 can also be applied to the solid state light source device 10 provided in the first embodiment. In this embodiment, the first power source 101, the second power source 102, and the third power source 103 respectively apply the same voltage to the first solid state light emitting chip 321, the second solid state light emitting wafer 331, and the third solid state light emitting wafer 341 to Blue light is emitted. The first phosphor powder 1222 in the first filling layer 122 emits red light under excitation of blue light emitted from the first solid-state light-emitting wafer 321 . The second phosphor powder 1322 in the second filling layer 132 emits green or yellow light under the excitation of the blue light emitted by the second solid-state light-emitting wafer 331. The blue light emitted by the third solid state light emitting wafer 341 is directly emitted through the third filling layer 342. The first power source 101, the second power source 102, and the third power source 103 can respectively control the currents of the first solid state light emitting chip 321, the second solid state light emitting chip 331, and the third solid state light emitting chip 341, respectively The color temperatures of the red, green, or yellow, and blue light emitted by the first filling layer 122, the second filling layer 132, and the third filling layer 342 are adjusted, so that the white light generated by the red, green, and blue light is mixed. Or white light produced by mixing red light, yellow light and blue light has high color rendering and can adapt to different practical needs. 15 200928173 In summary, the present invention has indeed met the requirements of the invention patent, and has a special shot. However, the above description is only the preferred embodiment of the present invention, and the scope of the patent application of the present invention is not limited thereto. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the present invention are to be included in the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a solid-state light source device according to a first embodiment of the present invention. Figure 2 is a schematic cross-sectional view showing a solid-state light source device according to a second embodiment of the present invention. 3 is a cross-sectional view of a solid-state light source device according to a third embodiment of the present invention. FIG. 4 is a partial cross-sectional view showing the optical microstructure layer of the solid-state light source device of FIG. Figure 5 is a partial cross-sectional view showing the optical micro-structure layer having a conical protrusion in the solid-state light source device of Figure 3. [Main component symbol description] Solid-state light source device 10, 20, 30 Body 11 First light-emitting unit 12 Second light-emitting unit 13 Third light-emitting unit 14 First accommodating groove 110 Second accommodating groove 112 16 200928173 Third accommodating groove 114 first solid state light emitting wafer 121, 321 " first filling layer 122' second solid state light emitting wafer 131, 331 second filling layer 132. third solid state light emitting wafer 141, 341 third filling layer 142, 342 first power source 101 ❹ second power source 102 third power source 103 first transparent substrate 1220 first phosphor powder 1222 second transparent substrate 1320 second phosphor powder 1322 third transparent substrate 1420 third phosphor powder 散射 scattering layer 1422 28 Four transparent substrates 281 scattering particles 282 optical microstructure layer 39 light emitting surface 391 optical microstructure 392 17