JP2012525016A - ヘテロ接合酸化物の不揮発性メモリデバイス - Google Patents
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Abstract
【選択図】図1b
Description
本出願は、35USC119(e)の下で、2009年8月14日に出願された米国仮特許出願番号61/234,183の利益を要求するものである。
Claims (17)
- 第1の金属層と;
前記第1の金属層に結合された第1の金属酸化物層と;
前記第1の金属酸化物層に結合された第2の金属酸化物層と;
前記第2の金属酸化物層に結合された第2の金属層と;
を具えたメモリデバイスであって、
前記第1の金属酸化物層の形成に関するギブスの自由エネルギが、前記第2の金属酸化物層の形成に関するギブスの自由エネルギよりも低いことを特徴とするメモリデバイス。 - 前記第1の金属酸化物層の形成に関するギブスの自由エネルギが、前記第2の金属酸化物層の形成に関するギブスの自由エネルギの2乃至3倍であることを特徴とする請求項1に記載のメモリデバイス。
- 前記第1の金属酸化物が、TiO2,Ti2O5,NiO,WO3,Al2O3を含んでおり、前記第2の金属酸化物層が、PCMOを含むことを特徴とする請求項1に記載のメモリデバイス。
- 前記第1の金属酸化物がAl2O3を含んでおり、前記第2の金属酸化物がCuxOxを含むことを特徴とする請求項1に記載のメモリデバイス。
- 前記第1の金属酸化物がAl2O3を含んでおり、前記第2の金属酸化物がTiO2を含むことを特徴とする請求項1に記載のメモリデバイス。
- 前記第1の金属酸化物が第1のスイッチ抵抗を具えており、前記第2の金属酸化物が第2のスイッチ抵抗を具えることを特徴とする請求項1に記載のメモリデバイス。
- 前記デバイスに大きなヒステリシスを与えるために、前記第1の金属酸化物層の高抵抗状態が、前記第2の金属酸化物層の高抵抗状態よりも非常に高く、前記第1の金属酸化物の低抵抗状態が、おおよそ前記第2の金属酸化物層の高抵抗状態であることを特徴とする請求項1に記載のメモリデバイス。
- 前記第1の金属酸化物層が、前記第2の金属酸化物層よりも薄いことを特徴とする請求項1に記載のメモリデバイス。
- 前記第2の金属酸化物層が、前記第1の金属酸化物層よりも3乃至5倍厚いことを特徴とする請求項1に記載のメモリデバイス。
- 第1のメモリデバイスであって、第1の金属層;前記第1の金属層に結合された第1の金属酸化物層;前記第1の金属酸化物層に結合された第2の金属酸化物層;前記第2の金属酸化物層に結合された第2の金属層を具えており、前記第1の金属酸化物層の形成に関するギブスの自由エネルギが、前記第2の金属酸化物層の形成に関するギブスの自由エネルギよりも低い、第1のメモリデバイスと;
前記第1のメモリデバイスに結合された第2のメモリデバイスであって、第1の金属層;前記第1の金属層に結合された第2の金属酸化物層;前記第2の金属酸化物層に結合された第2の金属層を具えており、前記第1の金属酸化物層の形成に関するギブスの自由エネルギが、前記第2の金属酸化物層の形成に関するギブスの自由エネルギよりも高い、第2のメモリデバイスと;
を具えることを特徴とするスイッチングデバイス。 - 前記スイッチングデバイスが3つの状態を有しており;前記3つの状態が、
前記第1及び第2のメモリデバイスが双方とも低抵抗状態にある00;
前記第1のメモリデバイスが低抵抗状態にあり、前記第2のメモリデバイスが高抵抗状態にある01;
前記第1のメモリデバイスが高抵抗状態にあり、前記第2のメモリデバイスが低抵抗状態にある10;
を具えることを特徴とする請求項10に記載のスイッチングデバイス。 - 非破壊読み取りを実行することによって、前記スイッチングデバイスが、00状態対01状態にあるか、又は00状態対10状態にあるかを識別し得ることを特徴とする請求項11に記載のスイッチングデバイス。
- 破壊読み取りを実行し、前記読み取りの後に状態を再インストールすることによって、前記スイッチングデバイスが、10状態対01状態にあるか、又は10状態対10状態にあるかを識別し得ることを特徴とする請求項11に記載のスイッチングデバイス。
- 時計方向の電圧対電流のヒステリシスループを発生させる第1のスイッチ抵抗と;
前記第1のスイッチ抵抗に結合された第2のスイッチ抵抗と;
を具えたスイッチングデバイスであって、
前記第2のスイッチ抵抗が、反時計方向の電圧対電流のヒステリシスループを発生させることを特徴とするスイッチングデバイス。 - 前記スイッチングデバイスが3つの状態を有しており、前記3つの状態が、
前記第1及び第2のスイッチ抵抗が双方とも低抵抗状態にある00;
前記第1のスイッチ抵抗が低抵抗状態にあり、前記第2のスイッチ抵抗が高抵抗状態にある01;
前記第1のスイッチ抵抗が高抵抗状態にあり、前記第2のスイッチ抵抗が低抵抗状態にある10;
を具えることを特徴とする請求項14に記載のスイッチングデバイス。 - 非破壊読み取りを実行することによって、前記スイッチングデバイスが、00状態対01状態にあるか、又は00状態対10状態にあるかを識別し得ることを特徴とする請求項15に記載のスイッチングデバイス。
- 破壊読み取りを実行し、前記読み取りの後に状態を再インストールすることによって、前記スイッチングデバイスが、10状態対01状態にあるか、又は10状態対10状態にあるかを識別し得ることを特徴とする請求項15に記載のスイッチングデバイス。
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US23418309P | 2009-08-14 | 2009-08-14 | |
US61/234,183 | 2009-08-14 | ||
PCT/US2010/045667 WO2011020122A1 (en) | 2009-08-14 | 2010-08-16 | Heterojunction oxide non-volatile memory device |
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US (5) | US8698120B2 (ja) |
EP (1) | EP2465140A4 (ja) |
JP (1) | JP2012525016A (ja) |
KR (1) | KR101392662B1 (ja) |
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US10003020B2 (en) | 2009-08-14 | 2018-06-19 | 4D-S Pty, Ltd | Heterojunction oxide non-volatile memory device |
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CN102365746A (zh) | 2012-02-29 |
US20170141303A1 (en) | 2017-05-18 |
KR101392662B1 (ko) | 2014-05-07 |
US10003020B2 (en) | 2018-06-19 |
US20120205611A1 (en) | 2012-08-16 |
US20160118581A1 (en) | 2016-04-28 |
CN102365746B (zh) | 2014-10-29 |
US9293201B2 (en) | 2016-03-22 |
WO2011020122A1 (en) | 2011-02-17 |
EP2465140A1 (en) | 2012-06-20 |
US20120199804A1 (en) | 2012-08-09 |
EP2465140A4 (en) | 2013-07-10 |
US8378345B2 (en) | 2013-02-19 |
US8698120B2 (en) | 2014-04-15 |
US20140169070A1 (en) | 2014-06-19 |
US9520559B2 (en) | 2016-12-13 |
KR20110134458A (ko) | 2011-12-14 |
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