JP2012518284A - ひずみ材料層の緩和および転写 - Google Patents
ひずみ材料層の緩和および転写 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 184
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000000059 patterning Methods 0.000 claims abstract description 11
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- -1 SiO 2 Chemical compound 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 230000000116 mitigating effect Effects 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- C30B29/403—AIII-nitrides
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Abstract
Description
シード基板を提供するステップと、
シード基板をパターンニングするステップと、
パターンニングされたシード基板上にひずみ材料層を成長させるステップと、
ひずみ材料層をパターンニングされたシード基板から中間基板に転写するステップと、
ひずみ材料層を、熱処理によって、少なくとも部分的に緩和させるステップとを含む。
シード基板を提供するステップと、
シード基板をパターンニングして、シード基板の島状領域を形成するステップと、
パターンニングされたシード基板上、特に、シード基板の島状領域上に、ひずみ材料層を成長させるステップと、
ひずみ材料層を、パターンニングされたシード基板から中間基板に転写するステップと、
ひずみ材料層の島状領域を形成するステップと、
ひずみ材料の島状領域を熱処理によって少なくとも部分的に緩和させるステップとを含む。
支持構造物であって、特にサファイアから成る支持構造物と、
高粘度材料と、
先に述べた例のうちの1つによる方法によってもたらされ、特に、100マイクロメートル×100マイクロメートルから1mm×1mmまでの面積の大きさと、500オングストロームを越える厚さを有する少なくとも部分的に緩和されたひずみ材料の島状領域と
を備えるウエハが提供される。
Claims (18)
- 少なくとも部分的に緩和されたひずみ材料層を形成する方法であって、
シード基板を提供するステップと、
前記シード基板をパターンニングするステップと、
前記パターンニングされたシード基板上にひずみ材料層を成長させるステップと、
前記ひずみ材料層を前記パターンニングされたシード基板から中間基板に転写するステップと、
前記ひずみ材料層を熱処理によって少なくとも部分的に緩和させるステップと
を含むことを特徴とする方法。 - 前記シード基板の前記パターンニングによって、シード基板の島状領域が形成され、
前記ひずみ材料層は前記シード基板の島状領域上で成長し、前記方法は
前記ひずみ材料層の島状領域を形成するステップであって、
前記ひずみ材料の島状領域は前記熱処理によって少なくとも部分的に緩和される、ステップをさらに含むことを特徴とする請求項1に記載の方法。 - 前記シード基板の前記パターンニングは、前記シード基板の表面上に開領域を備えるマスクを堆積させるステップを含み、
ひずみ材料の島状領域は、前記シード基板上の前記マスクの前記開領域における前記シード基板の表面上で成長し、
前記ひずみ材料の島状領域は前記パターニングされたシード基板から前記中間基板へ転写され、
前記ひずみ材料の島状領域が前記熱処理によって少なくとも部分的に緩和される
ことを特徴とする請求項1に記載の方法。 - 前記ひずみ材料層を前記パターンニングされたシード基板から前記中間基板に転写する前記ステップは、
前記ひずみ材料層の下の前記パターンニングされたシード基板にイオンを挿入して、弱化させた層を形成するステップと、
前記弱化させた層において、前記パターンニングされたシード基板から前記ひずみ材料層を熱処理によって分離させるステップと
をさらに含むことを特徴とする請求項1乃至3のいずれかに記載の方法。 - 前記ひずみ材料層を前記パターンニングされたシード基板から前記中間基板に転写する前記ステップは、
前記ひずみ材料層にイオンを挿入して、弱化させた層を形成するステップと、
前記弱化させた層において前記パターンニングされたシード基板から前記ひずみ材料層を熱処理によって分離するステップと
をさらに含むことを特徴とする請求項1乃至4のいずれかに記載の方法。 - 前記ひずみ材料層を前記パターンニングされたシード基板から前記中間基板に転写する前記ステップは、前記パターンニングされたシード基板を除去するステップを含み、特に、前記除去するステップは、前記パターンニングされたシード基板の電磁波照射、切削、機械研磨、またはエッチングを含むことを特徴とする請求項1乃至3に記載の方法。
- 前記パターンニングされたシード基板上で前記ひずみ材料層を成長させる前に、少なくとも1つのバッファ層を成長させることを特徴とする請求項1または2に記載の方法。
- 前記ひずみ材料層を前記パターンニングされたシード基板から前記中間基板に転写する前記ステップは、前記ひずみ材料層上に低粘度層、特に埋込コンプライアント層を堆積させるステップと、前記低粘度層を前記中間基板に接合するステップとを含むことを特徴とする請求項1乃至7のいずれかに記載の方法。
- 前記低粘度層は、ホウリンケイ酸ガラス、BPSG、またはSiO2などのボロンまたはリンを含む化合物を含むか、それらから成ることを特徴とする請求項8に記載の方法。
- 前記少なくとも部分的に緩和されたひずみ材料層をターゲット基板に転写するステップをさらに含むことを特徴とする請求項1乃至9のいずれかに記載の方法。
- 前記シード基板、前記中間基板、および前記ターゲット基板は、サファイアまたはシリコンを含むか、それらから成ることを特徴とする請求項1乃至10のいずれかに記載の方法。
- 前記ひずみ材料層は、InGaNまたはGaNから成るか、それらを含むことを特徴とする請求項1乃至11のいずれかに記載の方法。
- 前記ひずみ材料層は、Inを少なくとも3%、特に少なくとも10%含むInGaN層であることを特徴とする請求項12に記載の方法。
- 前記少なくとも部分的に緩和されたひずみ材料層のターゲット基板への前記転写するステップは、特にエッチング、機械研磨、前記中間基板の切削、または電磁波照射によって前記中間基板を除去することを含むことを特徴とする請求項9乃至12のいずれかに記載の方法。
- 前記少なくとも部分的に緩和されたひずみ材料の島状領域を前記ターゲット基板に転写する前記ステップは、前記少なくとも部分的に緩和されたひずみ材料の島状領域上に、高粘度層、特に埋込層を堆積するステップと、前記高粘度層を前記ターゲット基板に接合するステップとを含むことを特徴とする請求項14に記載の方法。
- 半導体デバイスを製造する方法であって、ターゲット基板上に少なくとも部分的に緩和されたひずみ材料を提供する請求項15に記載のステップを含み、前記形成された少なくとも部分的に緩和されたひずみ材料上に、少なくとも1つの材料層、特にLED用の層、または光電池デバイス層またはレーザデバイス層をエピタキシャル成長させるステップをさらに含むことを特徴とする方法。
- 支持構造物であって、特にサファイアまたはシリコンから成る支持構造物と、
高粘度層と、
請求項1から16のいずれかに記載の方法によってもたらされ、特に、100マイクロメートル×100マイクロメートルから1mm×1mmまでの面積の大きさと、500オングストロームを越える厚さを有する少なくとも部分的に緩和されたひずみ材料の島状領域と
を有することを特徴とするウエハ。 - 前記緩和されたひずみ材料上に、少なくとも1つの活性層、特に、LED層、レーザデバイス層または光電池デバイス層をさらに備えることを特徴とする請求項17に記載のウエハ。
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EP09290100A EP2221853B1 (en) | 2009-02-19 | 2009-02-19 | Relaxation and transfer of strained material layers |
EP09290100.8 | 2009-02-19 | ||
PCT/EP2010/000090 WO2010094371A2 (en) | 2009-02-19 | 2010-01-11 | Relaxation and transfer of strained material layers |
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JP2012518284A true JP2012518284A (ja) | 2012-08-09 |
JP5713921B2 JP5713921B2 (ja) | 2015-05-07 |
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US (1) | US9041165B2 (ja) |
EP (2) | EP2466626A3 (ja) |
JP (1) | JP5713921B2 (ja) |
KR (1) | KR101512777B1 (ja) |
CN (1) | CN102439695B (ja) |
AT (1) | ATE555494T1 (ja) |
SG (1) | SG173541A1 (ja) |
TW (1) | TWI474402B (ja) |
WO (1) | WO2010094371A2 (ja) |
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FR2973157B1 (fr) * | 2011-03-25 | 2014-03-14 | Soitec Silicon On Insulator | Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe |
DE102011077542B4 (de) * | 2011-06-15 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers |
FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
WO2014152617A1 (en) * | 2013-03-15 | 2014-09-25 | Semprius, Inc. | Engineered substrates for semiconductor epitaxy and methods of fabricating the same |
WO2015084868A1 (en) | 2013-12-02 | 2015-06-11 | The Regents Of The University Of Michigan | Fabrication of thin-film electronic devices with non-destructive wafer reuse |
US9177967B2 (en) | 2013-12-24 | 2015-11-03 | Intel Corporation | Heterogeneous semiconductor material integration techniques |
US20180053662A1 (en) * | 2016-08-17 | 2018-02-22 | Globalfoundries Inc. | Texturing of silicon surface with direct-self assembly patterning |
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CN102439695A (zh) | 2012-05-02 |
TW201036067A (en) | 2010-10-01 |
US9041165B2 (en) | 2015-05-26 |
SG173541A1 (en) | 2011-09-29 |
EP2466626A3 (en) | 2012-07-04 |
TWI474402B (zh) | 2015-02-21 |
KR101512777B1 (ko) | 2015-04-16 |
JP5713921B2 (ja) | 2015-05-07 |
WO2010094371A3 (en) | 2011-11-24 |
EP2221853B1 (en) | 2012-04-25 |
WO2010094371A2 (en) | 2010-08-26 |
CN102439695B (zh) | 2015-05-13 |
ATE555494T1 (de) | 2012-05-15 |
KR20110120325A (ko) | 2011-11-03 |
EP2466626A2 (en) | 2012-06-20 |
EP2221853A1 (en) | 2010-08-25 |
US20110291247A1 (en) | 2011-12-01 |
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