JP2012510742A - クロックデューティサイクル適合による半導体デバイスの性能の低下の補償 - Google Patents

クロックデューティサイクル適合による半導体デバイスの性能の低下の補償 Download PDF

Info

Publication number
JP2012510742A
JP2012510742A JP2011537892A JP2011537892A JP2012510742A JP 2012510742 A JP2012510742 A JP 2012510742A JP 2011537892 A JP2011537892 A JP 2011537892A JP 2011537892 A JP2011537892 A JP 2011537892A JP 2012510742 A JP2012510742 A JP 2012510742A
Authority
JP
Japan
Prior art keywords
integrated circuit
duty cycle
performance
clock signal
parameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011537892A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012510742A5 (enExample
Inventor
パパジョルジュ ヴァシリオス
ヴィアタ マチェイ
ホエンチェル ジャン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2012510742A publication Critical patent/JP2012510742A/ja
Publication of JP2012510742A5 publication Critical patent/JP2012510742A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/008Reliability or availability analysis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pulse Circuits (AREA)
JP2011537892A 2008-11-28 2009-11-27 クロックデューティサイクル適合による半導体デバイスの性能の低下の補償 Pending JP2012510742A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008059502A DE102008059502A1 (de) 2008-11-28 2008-11-28 Kompensation der Leistungsbeeinträchtigung von Halbleiterbauelementen durch Anpassung des Tastgrades des Taktsignals
DE102008059502.0 2008-11-28
US12/604,532 US8018260B2 (en) 2008-11-28 2009-10-23 Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptation
US12/604,532 2009-10-23
PCT/EP2009/008470 WO2010060638A1 (en) 2008-11-28 2009-11-27 Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptation

Publications (2)

Publication Number Publication Date
JP2012510742A true JP2012510742A (ja) 2012-05-10
JP2012510742A5 JP2012510742A5 (enExample) 2013-01-17

Family

ID=42145369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011537892A Pending JP2012510742A (ja) 2008-11-28 2009-11-27 クロックデューティサイクル適合による半導体デバイスの性能の低下の補償

Country Status (6)

Country Link
US (1) US8018260B2 (enExample)
JP (1) JP2012510742A (enExample)
KR (1) KR20110138209A (enExample)
CN (1) CN102308283A (enExample)
DE (1) DE102008059502A1 (enExample)
WO (1) WO2010060638A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014203775A1 (ja) * 2013-06-17 2014-12-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP2015228265A (ja) * 2010-12-21 2015-12-17 インテル コーポレイション マイクロプロセッサにおける熱設計電力を設定する方法及び装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8578143B2 (en) * 2011-05-17 2013-11-05 Apple Inc. Modifying operating parameters based on device use
US9465373B2 (en) 2013-09-17 2016-10-11 International Business Machines Corporation Dynamic adjustment of operational parameters to compensate for sensor based measurements of circuit degradation
KR102197943B1 (ko) 2014-04-04 2021-01-05 삼성전자주식회사 메모리 컨트롤러와 이를 포함하는 시스템
US9251890B1 (en) 2014-12-19 2016-02-02 Globalfoundries Inc. Bias temperature instability state detection and correction
US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
KR102235521B1 (ko) 2015-02-13 2021-04-05 삼성전자주식회사 특정 패턴을 갖는 저장 장치 및 그것의 동작 방법
US11605416B1 (en) * 2021-11-10 2023-03-14 Micron Technology, Inc. Reducing duty cycle degradation for a signal path
CN119231931B (zh) * 2024-12-03 2025-04-01 浙江绿力智能科技有限公司 一种转换器智能调控方法及系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04274100A (ja) * 1991-03-01 1992-09-30 Nec Corp テスト回路内蔵のメモリーlsi
JP2000012639A (ja) * 1998-06-24 2000-01-14 Toshiba Corp モニターtegのテスト回路
JP2002006003A (ja) * 2000-04-20 2002-01-09 Texas Instr Inc <Ti> 位相ロック・ループ用全ディジタル内蔵自己検査回路および検査方法
JP2004004049A (ja) * 2002-04-24 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体装置の検査方法及び検査装置
JP2005063414A (ja) * 2003-08-19 2005-03-10 Internatl Business Mach Corp <Ibm> 経年変化電子コンポーネントを補償するために動作周波数を調整する周波数変更技法
WO2008132033A1 (en) * 2007-04-30 2008-11-06 International Business Machines Corporation Monitoring reliability of a digital system
JP2009510793A (ja) * 2005-10-04 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション チップ性能を最大にするように負荷サイクル回路を自動的に自己較正するための装置及び方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903564B1 (en) * 2003-11-12 2005-06-07 Transmeta Corporation Device aging determination circuit
US7333905B2 (en) * 2006-05-01 2008-02-19 International Business Machines Corporation Method and apparatus for measuring the duty cycle of a digital signal
US7330061B2 (en) * 2006-05-01 2008-02-12 International Business Machines Corporation Method and apparatus for correcting the duty cycle of a digital signal

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04274100A (ja) * 1991-03-01 1992-09-30 Nec Corp テスト回路内蔵のメモリーlsi
JP2000012639A (ja) * 1998-06-24 2000-01-14 Toshiba Corp モニターtegのテスト回路
JP2002006003A (ja) * 2000-04-20 2002-01-09 Texas Instr Inc <Ti> 位相ロック・ループ用全ディジタル内蔵自己検査回路および検査方法
JP2004004049A (ja) * 2002-04-24 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体装置の検査方法及び検査装置
JP2005063414A (ja) * 2003-08-19 2005-03-10 Internatl Business Mach Corp <Ibm> 経年変化電子コンポーネントを補償するために動作周波数を調整する周波数変更技法
JP2009510793A (ja) * 2005-10-04 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション チップ性能を最大にするように負荷サイクル回路を自動的に自己較正するための装置及び方法
WO2008132033A1 (en) * 2007-04-30 2008-11-06 International Business Machines Corporation Monitoring reliability of a digital system
JP2010527174A (ja) * 2007-04-30 2010-08-05 インターナショナル・ビジネス・マシーンズ・コーポレーション ディジタル・システムの信頼性を監視するシステム、およびその監視する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015228265A (ja) * 2010-12-21 2015-12-17 インテル コーポレイション マイクロプロセッサにおける熱設計電力を設定する方法及び装置
US9898067B2 (en) 2010-12-21 2018-02-20 Intel Corporation Method and apparatus to configure thermal design power in a microprocessor
US9898066B2 (en) 2010-12-21 2018-02-20 Intel Corporation Method and apparatus to configure thermal design power in a microprocessor
WO2014203775A1 (ja) * 2013-06-17 2014-12-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置

Also Published As

Publication number Publication date
DE102008059502A1 (de) 2010-06-10
US20100134167A1 (en) 2010-06-03
CN102308283A (zh) 2012-01-04
KR20110138209A (ko) 2011-12-26
US8018260B2 (en) 2011-09-13
WO2010060638A1 (en) 2010-06-03

Similar Documents

Publication Publication Date Title
JP2012510742A (ja) クロックデューティサイクル適合による半導体デバイスの性能の低下の補償
US7342291B2 (en) Standby current reduction over a process window with a trimmable well bias
White et al. Scaled CMOS technology reliability users guide
JP4732726B2 (ja) 半導体装置の製造方法
KR101662908B1 (ko) 문턱전압의 오프 스테이트 스트레스 저하 복원
US7750400B2 (en) Integrated circuit modeling, design, and fabrication based on degradation mechanisms
JP2016500927A (ja) 低変動トランジスタ・ペリフェラル回路を備えるdram型デバイス、及び関連する方法
TWI627525B (zh) 電壓與頻率調整裝置、系統晶片以及電壓與頻率調整方法
US10054630B2 (en) Methods, apparatus and system for screening process splits for technology development
JP2009044220A (ja) 半導体集積回路
Zheng et al. Circuit aging prediction for low-power operation
Kerber et al. Bias temperature instability in scaled CMOS technologies: A circuit perspective
Rzepa et al. Reliability and variability-aware DTCO flow: Demonstration of projections to n3 FinFET and nanosheet technologies
CN101795126B (zh) 用于表征工艺变化的系统和方法
US8456224B2 (en) Compensation of operating time-related degradation of operating speed by a constant total die power mode
WO2003094235A1 (fr) Dispositif de circuit integre a semiconducteur
US20090085652A1 (en) Compensation of operating time related degradation of operating speed by adapting the supply voltage
US7335518B2 (en) Method for manufacturing semiconductor device
JP4880888B2 (ja) 半導体装置の製造方法
Wang et al. Reliability of HfSiON as gate dielectric for advanced CMOS technology
Liao et al. Study of junction degradation and lifetime assessment in FinFETs
US20060226863A1 (en) Method and apparatus to adjust die frequency
Groeseneken et al. Challenges in reliability assessment of advanced CMOS technologies
Rossoni et al. Layout experiments and test structures to characterize Local Layout Effects due to mechanical stress in FinFET transistors
Marshall Invited talk: Noise and mismatch in sub 28nm silicon processes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130416

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130424

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130724

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130731

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130826

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131218