JP2012510162A5 - - Google Patents

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Publication number
JP2012510162A5
JP2012510162A5 JP2011537626A JP2011537626A JP2012510162A5 JP 2012510162 A5 JP2012510162 A5 JP 2012510162A5 JP 2011537626 A JP2011537626 A JP 2011537626A JP 2011537626 A JP2011537626 A JP 2011537626A JP 2012510162 A5 JP2012510162 A5 JP 2012510162A5
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JP
Japan
Prior art keywords
substrate
passivation film
seed layer
via structure
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011537626A
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English (en)
Japanese (ja)
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JP5409801B2 (ja
JP2012510162A (ja
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Priority claimed from US12/620,818 external-priority patent/US8293647B2/en
Application filed filed Critical
Publication of JP2012510162A publication Critical patent/JP2012510162A/ja
Publication of JP2012510162A5 publication Critical patent/JP2012510162A5/ja
Application granted granted Critical
Publication of JP5409801B2 publication Critical patent/JP5409801B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011537626A 2008-11-24 2009-11-19 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき Expired - Fee Related JP5409801B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11754008P 2008-11-24 2008-11-24
US61/117,540 2008-11-24
US12/620,818 US8293647B2 (en) 2008-11-24 2009-11-18 Bottom up plating by organic surface passivation and differential plating retardation
US12/620,818 2009-11-18
PCT/US2009/065193 WO2010059857A2 (en) 2008-11-24 2009-11-19 Bottom up plating by organic surface passivation and differential plating retardation

Publications (3)

Publication Number Publication Date
JP2012510162A JP2012510162A (ja) 2012-04-26
JP2012510162A5 true JP2012510162A5 (cg-RX-API-DMAC10.html) 2013-01-17
JP5409801B2 JP5409801B2 (ja) 2014-02-05

Family

ID=42196702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011537626A Expired - Fee Related JP5409801B2 (ja) 2008-11-24 2009-11-19 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき

Country Status (6)

Country Link
US (1) US8293647B2 (cg-RX-API-DMAC10.html)
JP (1) JP5409801B2 (cg-RX-API-DMAC10.html)
KR (1) KR101368308B1 (cg-RX-API-DMAC10.html)
CN (1) CN102224574B (cg-RX-API-DMAC10.html)
TW (1) TWI397616B (cg-RX-API-DMAC10.html)
WO (1) WO2010059857A2 (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
JP5667485B2 (ja) * 2011-03-17 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法、及び半導体装置
US20130051530A1 (en) * 2011-08-30 2013-02-28 Fujifilm Corporation High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
CN102798471B (zh) * 2011-10-19 2015-08-12 清华大学 一种红外探测器及其制备方法
US8754531B2 (en) * 2012-03-14 2014-06-17 Nanya Technology Corp. Through-silicon via with a non-continuous dielectric layer
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR101972969B1 (ko) * 2012-08-20 2019-04-29 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
CN104112697B (zh) * 2013-04-18 2017-09-15 中芯国际集成电路制造(上海)有限公司 一种改善铜填充质量的方法
JP6187008B2 (ja) * 2013-08-07 2017-08-30 大日本印刷株式会社 金属充填構造体の製造方法及び金属充填構造体
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
US9349637B2 (en) * 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9859124B2 (en) * 2015-04-17 2018-01-02 Taiwan Semiconductor Manufacturing Company Ltd Method of manufacturing semiconductor device with recess
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US20160351493A1 (en) * 2015-05-27 2016-12-01 Macronix International Co., Ltd. Semiconductor device and manufacturing method for the same
WO2017070190A1 (en) * 2015-10-23 2017-04-27 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
US10438847B2 (en) 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
WO2020255772A1 (ja) * 2019-06-18 2020-12-24 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959874A (en) * 1974-12-20 1976-06-01 Western Electric Company, Inc. Method of forming an integrated circuit assembly
US6380096B2 (en) * 1998-07-09 2002-04-30 Applied Materials, Inc. In-situ integrated oxide etch process particularly useful for copper dual damascene
KR100323875B1 (ko) 1999-06-29 2002-02-16 박종섭 반도체 소자의 금속 배선 형성 방법
US6410418B1 (en) * 1999-08-18 2002-06-25 Advanced Micro Devices, Inc. Recess metallization via selective insulator formation on nucleation/seed layer
KR100331570B1 (ko) * 2000-06-13 2002-04-06 윤종용 전기도금법을 이용한 반도체 메모리 소자의 커패시터제조방법
US6787460B2 (en) * 2002-01-14 2004-09-07 Samsung Electronics Co., Ltd. Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed
KR100465063B1 (ko) * 2002-04-01 2005-01-06 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
US7628897B2 (en) * 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US20040248375A1 (en) * 2003-06-04 2004-12-09 Mcneil John Trench filling methods
KR100998963B1 (ko) 2003-07-21 2010-12-09 매그나칩 반도체 유한회사 반도체 소자의 rf 인덕터 제조 방법
KR100599434B1 (ko) * 2003-10-20 2006-07-14 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
KR20050056383A (ko) 2003-12-10 2005-06-16 매그나칩 반도체 유한회사 반도체 소자의 금속배선 형성방법
US7068138B2 (en) * 2004-01-29 2006-06-27 International Business Machines Corporation High Q factor integrated circuit inductor
KR100857629B1 (ko) * 2004-10-08 2008-09-08 실버브룩 리서치 피티와이 리미티드 에칭된 트렌치로부터 폴리머 코팅의 제거 방법
KR100632552B1 (ko) * 2004-12-30 2006-10-11 삼성전기주식회사 내부 비아홀의 필 도금 구조 및 그 제조 방법
JP2007009247A (ja) * 2005-06-28 2007-01-18 Ebara Corp 基板処理装置及び基板処理方法
JP2006274369A (ja) * 2005-03-29 2006-10-12 Ebara Corp 基板配線形成方法、基板配線形成装置、及びめっき抑制物質転写スタンプ
JP2007149824A (ja) * 2005-11-25 2007-06-14 Ebara Corp 成膜方法及び成膜装置
US7709320B2 (en) * 2006-06-28 2010-05-04 International Business Machines Corporation Method of fabricating trench capacitors and memory cells using trench capacitors
US20080124924A1 (en) * 2006-07-18 2008-05-29 Applied Materials, Inc. Scheme for copper filling in vias and trenches
US20080026555A1 (en) * 2006-07-26 2008-01-31 Dubin Valery M Sacrificial tapered trench opening for damascene interconnects
US7560222B2 (en) * 2006-10-31 2009-07-14 International Business Machines Corporation Si-containing polymers for nano-pattern device fabrication
US7915115B2 (en) * 2008-06-03 2011-03-29 International Business Machines Corporation Method for forming dual high-k metal gate using photoresist mask and structures thereof

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