JP2012508980A - 有機半導体デバイスにおける有機半導体のオフセンター堆積 - Google Patents

有機半導体デバイスにおける有機半導体のオフセンター堆積 Download PDF

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Publication number
JP2012508980A
JP2012508980A JP2011536386A JP2011536386A JP2012508980A JP 2012508980 A JP2012508980 A JP 2012508980A JP 2011536386 A JP2011536386 A JP 2011536386A JP 2011536386 A JP2011536386 A JP 2011536386A JP 2012508980 A JP2012508980 A JP 2012508980A
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Japan
Prior art keywords
channel
deposited
thin film
length
semiconductor
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JP2011536386A
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Japanese (ja)
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JP2012508980A5 (https=
Inventor
エム. シュノブリッチ,スコット
エス. クロウ,ロバート
イー. ボーゲル,デニス
イー. グリフィン,マイケル
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2012508980A publication Critical patent/JP2012508980A/ja
Publication of JP2012508980A5 publication Critical patent/JP2012508980A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2011536386A 2008-11-14 2009-11-03 有機半導体デバイスにおける有機半導体のオフセンター堆積 Pending JP2012508980A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11478408P 2008-11-14 2008-11-14
US61/114,784 2008-11-14
PCT/US2009/063099 WO2010056568A1 (en) 2008-11-14 2009-11-03 Off-center deposition of organic semiconductor in an organic semiconductor device

Publications (2)

Publication Number Publication Date
JP2012508980A true JP2012508980A (ja) 2012-04-12
JP2012508980A5 JP2012508980A5 (https=) 2012-12-13

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ID=41722786

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JP2011536386A Pending JP2012508980A (ja) 2008-11-14 2009-11-03 有機半導体デバイスにおける有機半導体のオフセンター堆積

Country Status (4)

Country Link
EP (1) EP2356708A1 (https=)
JP (1) JP2012508980A (https=)
CN (1) CN102217109A (https=)
WO (1) WO2010056568A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017098489A (ja) * 2015-11-27 2017-06-01 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261423A (ja) * 2005-03-17 2006-09-28 Ricoh Co Ltd 薄膜トランジスタ及びそれを用いた画像表示装置
JP2007088471A (ja) * 2005-09-21 2007-04-05 Samsung Electronics Co Ltd 表示装置と表示装置の製造方法{displayapparatusandmanufacturingmethodthereof}
WO2007135911A1 (ja) * 2006-05-18 2007-11-29 Konica Minolta Holdings, Inc. 有機薄膜トランジスタの形成方法、及び有機薄膜トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008114564A1 (ja) * 2007-02-21 2008-09-25 Brother Kogyo Kabushiki Kaisha 薄膜トランジスタ及び薄膜トランジスタの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261423A (ja) * 2005-03-17 2006-09-28 Ricoh Co Ltd 薄膜トランジスタ及びそれを用いた画像表示装置
JP2007088471A (ja) * 2005-09-21 2007-04-05 Samsung Electronics Co Ltd 表示装置と表示装置の製造方法{displayapparatusandmanufacturingmethodthereof}
WO2007135911A1 (ja) * 2006-05-18 2007-11-29 Konica Minolta Holdings, Inc. 有機薄膜トランジスタの形成方法、及び有機薄膜トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017098489A (ja) * 2015-11-27 2017-06-01 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ

Also Published As

Publication number Publication date
WO2010056568A1 (en) 2010-05-20
CN102217109A (zh) 2011-10-12
EP2356708A1 (en) 2011-08-17

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