JP2012505550A - 分子イオンのイオン注入技術 - Google Patents
分子イオンのイオン注入技術 Download PDFInfo
- Publication number
- JP2012505550A JP2012505550A JP2011531113A JP2011531113A JP2012505550A JP 2012505550 A JP2012505550 A JP 2012505550A JP 2011531113 A JP2011531113 A JP 2011531113A JP 2011531113 A JP2011531113 A JP 2011531113A JP 2012505550 A JP2012505550 A JP 2012505550A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- carbon
- molecular
- containing species
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001793 charged compounds Chemical class 0.000 title claims abstract description 60
- 238000005468 ion implantation Methods 0.000 title claims abstract description 36
- 238000005516 engineering process Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000005280 amorphization Methods 0.000 claims abstract description 27
- 239000013077 target material Substances 0.000 claims abstract description 23
- 238000011065 in-situ storage Methods 0.000 claims abstract description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 29
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 28
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 17
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 12
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 6
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 238000002513 implantation Methods 0.000 abstract description 17
- 150000002500 ions Chemical class 0.000 description 57
- 239000007789 gas Substances 0.000 description 26
- 238000010884 ion-beam technique Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000004458 analytical method Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【選択図】図3
Description
Claims (19)
- イオン注入方法であって、該方法は、
ターゲット材料の歪みおよびアモルファス化のうち少なくとも一方を改善するために、前記ターゲット材料に、所定温度で分子イオンを注入するステップを有し、前記分子イオンはイオン源内でその場生成されることを特徴とするイオン注入方法。 - 前記分子イオンが2つ以上の種を用いて生成されることを特徴とする請求項1に記載の方法。
- 前記分子イオンがCaPbHc分子イオンであることを特徴とする請求項1に記載の方法。
- 前記分子イオンが炭素含有種およびリン含有種を用いて生成されることを特徴とする請求項1に記載の方法。
- 前記炭素含有種が、エタンであることを特徴とする請求項4に記載の方法。
- 前記炭素含有種が、分子炭素、アルカン、およびアルケンのうちの少なくとも1つであることを特徴とする請求項4に記載の方法。
- 前記リン含有種が、ホスフィンであることを特徴とする請求項4に記載の方法。
- 前記ターゲット材料に注入することにより歪みを発生させ、前記ターゲット材料に極浅接合(USJ)を形成することを特徴とする請求項1に記載の方法。
- 歪みおよびアモルファス化の少なくとも一方をさらに改善するために、ドーズ量、ドーズ率、前記炭素含有種に含まれる原子の数、原子エネルギー、圧力、および所定温度のうち少なくとも1つを制御するステップを有することを特徴とする請求項1に記載の方法。
- イオン注入装置であって、該装置は、
ターゲット材料の歪みおよびアモルファス化のうち少なくとも一方を改善するために、前記ターゲット材料に、所定温度で分子イオンを注入するイオン注入機を有し、前記分子イオンはイオン源内でその場生成されることを特徴とするイオン注入装置。 - 前記分子イオンが2つ以上の種を用いて生成されることを特徴とする請求項10に記載の装置。
- 前記分子イオンがCaPbHc分子イオンであることを特徴とする請求項10に記載の装置。
- 前記分子イオンが炭素含有種およびリン含有種を用いて生成されることを特徴とする請求項10に記載の装置。
- 前記炭素含有種が、エタンであることを特徴とする請求項13に記載の装置。
- 前記炭素含有種が、分子炭素、アルカン、およびアルケンのうちの少なくとも1つであることを特徴とする請求項13に記載の装置。
- 前記リン含有種が、ホスフィンであることを特徴とする請求項13に記載の装置。
- 前記ターゲット材料に注入することにより歪みを発生させ、前記ターゲット材料に極浅接合(USJ)を形成することを特徴とする請求項10に記載の装置。
- 歪みおよびアモルファス化の少なくとも一方をさらに改善するために、ドーズ量、ドーズ率、前記炭素含有種に含まれる原子の数、原子エネルギー、圧力、および所定温度のうち少なくとも1つを制御することを特徴とする請求項10に記載の装置。
- イオン注入装置であって、該装置は、
ターゲット材料の歪みおよびアモルファス化のうち少なくとも一方を改善するために、前記ターゲット材料に、所定温度で分子イオンを注入するイオン注入機を有し、前記分子イオンは、炭素含有種およびリン含有種を用いてイオン源内でその場生成されることを特徴とするイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/247,544 US7807961B2 (en) | 2008-10-08 | 2008-10-08 | Techniques for ion implantation of molecular ions |
US12/247,544 | 2008-10-08 | ||
PCT/US2009/059688 WO2010042509A2 (en) | 2008-10-08 | 2009-10-06 | Techniques for ion implantation of molecular ions |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012505550A true JP2012505550A (ja) | 2012-03-01 |
JP2012505550A5 JP2012505550A5 (ja) | 2012-10-18 |
Family
ID=42075060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011531113A Pending JP2012505550A (ja) | 2008-10-08 | 2009-10-06 | 分子イオンのイオン注入技術 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7807961B2 (ja) |
JP (1) | JP2012505550A (ja) |
KR (1) | KR20110086022A (ja) |
CN (1) | CN102265385A (ja) |
TW (1) | TW201025405A (ja) |
WO (1) | WO2010042509A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013040369A (ja) * | 2011-08-15 | 2013-02-28 | Ulvac Japan Ltd | イオン注入法及び磁気記録媒体の製造方法 |
JP2019149486A (ja) * | 2018-02-27 | 2019-09-05 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7868306B2 (en) * | 2008-10-02 | 2011-01-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal modulation of implant process |
JP2010161259A (ja) * | 2009-01-09 | 2010-07-22 | Toshiba Corp | プロセスシミュレーションプログラム、プロセスシミュレーション方法、プロセスシミュレータ |
US9024273B2 (en) | 2010-04-20 | 2015-05-05 | Varian Semiconductor Equipment Associates, Inc. | Method to generate molecular ions from ions with a smaller atomic mass |
US8742373B2 (en) * | 2010-12-10 | 2014-06-03 | Varian Semiconductor Equipment Associates, Inc. | Method of ionization |
FR2976400B1 (fr) * | 2011-06-09 | 2013-12-20 | Ion Beam Services | Machine d'implantation ionique en mode immersion plasma pour procede basse pression. |
US9297063B2 (en) * | 2012-04-26 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma potential modulated ion implantation system |
TWI576886B (zh) * | 2012-06-27 | 2017-04-01 | 艾克塞利斯科技公司 | 離子佈植系統、分析器的束線操作列、從離子束移除不要之物種的方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03269940A (ja) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | イオン注入装置及びそれを用いた半導体集積回路装置の製造方法 |
JPH0817376A (ja) * | 1994-07-01 | 1996-01-19 | Mitsubishi Electric Corp | イオン源およびイオン注入装置 |
JP2002299346A (ja) * | 2001-04-02 | 2002-10-11 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
WO2007070321A2 (en) * | 2005-12-09 | 2007-06-21 | Semequip Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
JP2007525838A (ja) * | 2004-02-14 | 2007-09-06 | エピオン コーポレーション | ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法 |
WO2007149738A2 (en) * | 2006-06-12 | 2007-12-27 | Semequip, Inc. | Vaporizer |
JP2008522429A (ja) * | 2004-12-03 | 2008-06-26 | エピオン コーポレーション | ガスクラスタイオン照射による極浅接合部の形成 |
JP2008532262A (ja) * | 2005-01-31 | 2008-08-14 | 東京エレクトロン株式会社 | 半導体装置を製造する方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1070563B (it) | 1975-11-14 | 1985-03-29 | Ibm | Apparecchiatura perfezionata per l impiantamento di ioni |
US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
US6987037B2 (en) * | 2003-05-07 | 2006-01-17 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
US7459704B2 (en) * | 2004-11-12 | 2008-12-02 | Varian Semiconductor Equipment Associates, Inc. | Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms |
JP4578412B2 (ja) | 2006-01-20 | 2010-11-10 | 日本碍子株式会社 | 放電プラズマ発生方法 |
US20080090393A1 (en) * | 2006-10-10 | 2008-04-17 | Wolfgang Aderhold | Ultra shallow junction with rapid thermal anneal |
US7919402B2 (en) * | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US20090200494A1 (en) * | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
-
2008
- 2008-10-08 US US12/247,544 patent/US7807961B2/en not_active Expired - Fee Related
-
2009
- 2009-10-06 JP JP2011531113A patent/JP2012505550A/ja active Pending
- 2009-10-06 KR KR1020117010313A patent/KR20110086022A/ko not_active Application Discontinuation
- 2009-10-06 CN CN2009801485219A patent/CN102265385A/zh active Pending
- 2009-10-06 WO PCT/US2009/059688 patent/WO2010042509A2/en active Application Filing
- 2009-10-07 TW TW098133990A patent/TW201025405A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03269940A (ja) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | イオン注入装置及びそれを用いた半導体集積回路装置の製造方法 |
JPH0817376A (ja) * | 1994-07-01 | 1996-01-19 | Mitsubishi Electric Corp | イオン源およびイオン注入装置 |
JP2002299346A (ja) * | 2001-04-02 | 2002-10-11 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2007525838A (ja) * | 2004-02-14 | 2007-09-06 | エピオン コーポレーション | ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法 |
JP2008522429A (ja) * | 2004-12-03 | 2008-06-26 | エピオン コーポレーション | ガスクラスタイオン照射による極浅接合部の形成 |
JP2008532262A (ja) * | 2005-01-31 | 2008-08-14 | 東京エレクトロン株式会社 | 半導体装置を製造する方法 |
WO2007070321A2 (en) * | 2005-12-09 | 2007-06-21 | Semequip Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
WO2007149738A2 (en) * | 2006-06-12 | 2007-12-27 | Semequip, Inc. | Vaporizer |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013040369A (ja) * | 2011-08-15 | 2013-02-28 | Ulvac Japan Ltd | イオン注入法及び磁気記録媒体の製造方法 |
JP2019149486A (ja) * | 2018-02-27 | 2019-09-05 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
WO2019167430A1 (ja) * | 2018-02-27 | 2019-09-06 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
KR20200074964A (ko) * | 2018-02-27 | 2020-06-25 | 가부시키가이샤 사무코 | 반도체 에피택셜 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 |
CN111902911A (zh) * | 2018-02-27 | 2020-11-06 | 胜高股份有限公司 | 半导体外延晶片的制造方法以及半导体器件的制造方法 |
US11195716B2 (en) | 2018-02-27 | 2021-12-07 | Sumco Corporation | Method of producing semiconductor epitaxial wafer and method of producing semiconductor device |
KR102382500B1 (ko) | 2018-02-27 | 2022-04-01 | 가부시키가이샤 사무코 | 반도체 에피택셜 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 |
CN111902911B (zh) * | 2018-02-27 | 2023-09-19 | 胜高股份有限公司 | 半导体外延晶片的制造方法以及半导体器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010042509A9 (en) | 2011-09-09 |
WO2010042509A2 (en) | 2010-04-15 |
US20100084577A1 (en) | 2010-04-08 |
WO2010042509A3 (en) | 2010-07-22 |
CN102265385A (zh) | 2011-11-30 |
KR20110086022A (ko) | 2011-07-27 |
TW201025405A (en) | 2010-07-01 |
US7807961B2 (en) | 2010-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2012505550A (ja) | 分子イオンのイオン注入技術 | |
KR20100126721A (ko) | 탄소-함유 종의 콜드 주입을 위한 기술 | |
KR101409925B1 (ko) | 기판을 이용하여 솔라 셀을 제조하는 방법 | |
US8618514B2 (en) | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions | |
US7960709B2 (en) | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions | |
JP5911528B2 (ja) | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 | |
US20100323113A1 (en) | Method to Synthesize Graphene | |
TWI449078B (zh) | 用於離子植入之設備、多模式離子源以及用於多種模式中的離子植入之方法 | |
KR101838578B1 (ko) | 실라보란 주입 공정들 | |
US8372735B2 (en) | USJ techniques with helium-treated substrates | |
WO2008151309A2 (en) | An ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane cluster ions | |
KR20120006550A (ko) | 비-평면 기판 표면을 갖는 기판을 처리하기 위한 방법 | |
US20120135578A1 (en) | Doping of planar or three-dimensional structures at elevated temperatures | |
JP5710272B2 (ja) | 希釈ガスを用いるエタン注入 | |
US8124506B2 (en) | USJ techniques with helium-treated substrates | |
CN102918631A (zh) | 无损结形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120828 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140403 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141007 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150126 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150202 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20150313 |