JP2012501557A - 多層金属薄膜製造方法及びその製造装置 - Google Patents
多層金属薄膜製造方法及びその製造装置 Download PDFInfo
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- JP2012501557A JP2012501557A JP2011525967A JP2011525967A JP2012501557A JP 2012501557 A JP2012501557 A JP 2012501557A JP 2011525967 A JP2011525967 A JP 2011525967A JP 2011525967 A JP2011525967 A JP 2011525967A JP 2012501557 A JP2012501557 A JP 2012501557A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 164
- 239000002184 metal Substances 0.000 title claims abstract description 164
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 184
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 239000002243 precursor Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims description 62
- 229910017052 cobalt Inorganic materials 0.000 claims description 48
- 239000010941 cobalt Substances 0.000 claims description 48
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 48
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 32
- 229910052719 titanium Inorganic materials 0.000 claims description 32
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 7
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/24—Nitriding
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
- (a)第1反応容器に第1金属前駆体を流入して、基板上に第1金属膜を形成する工程と、
(b)第2反応容器に第2金属前駆体を流入して、前記第1金属膜上に第2金属膜を形成する工程と、を含み、
前記(b)工程は、前記第1金属膜が熱処理されながら前記第2金属膜が形成されるように、前記第1金属膜の熱処理温度の範囲内でなされることを特徴とする多層金属薄膜製造方法。 - (c)前記第2反応容器で前記第2金属膜の表面を窒化する工程を更に含むことを特徴とする請求項1に記載の多層金属薄膜製造方法。
- (c)第3反応容器に前記第2金属前駆体及び窒素前駆体を流入して、前記第2金属膜上に第2金属窒化膜を形成する工程を更に含むことを特徴とする請求項1に記載の多層金属薄膜製造方法。
- 前記第1金属膜はコバルト膜であり、
前記第2金属膜はチタン膜であることを特徴とする請求項1ないし3のいずれか一つに記載の多層金属薄膜製造方法。 - (a)第1反応容器に第1金属前駆体を流入して、基板上に第1金属膜を蒸着する工程と、
(b)第2反応容器に第2金属前駆体及び窒素前駆体を流入して、前記第1金属膜上に窒素割合が5%〜35%である第2金属窒化膜及び第2金属割合が5%〜35%である第2金属窒化膜を順次形成する工程と、を含み、
前記(b)工程は、前記第1金属膜が熱処理されながら前記第2金属窒化膜が形成されるように、前記第1金属膜の熱処理温度の範囲内でなされることを特徴とする多層金属薄膜製造方法。 - 前記第1金属膜はコバルト膜であり、
前記第2金属窒化膜はチタン窒化膜であることを特徴とする請求項5に記載の多層金属薄膜製造方法。 - 前記(b)工程で、前記第2反応容器内にプラズマを印加して、前記第1金属膜のプラズマ処理がさらになされることを特徴とする請求項1、2、3又は5のいずれか一つに記載の多層金属薄膜製造方法。
- 前記プラズマは、水素を含むガスを基盤とするプラズマであることを特徴とする請求項7に記載の多層金属薄膜製造方法。
- 前記水素を含むガスは、H2またはNH3であることを特徴とする請求項8に記載の多層金属薄膜製造方法。
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PCT/KR2008/005235 WO2010027112A1 (en) | 2008-09-04 | 2008-09-04 | Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same |
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JP2012501557A true JP2012501557A (ja) | 2012-01-19 |
JP5409790B2 JP5409790B2 (ja) | 2014-02-05 |
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US (1) | US8980742B2 (ja) |
JP (1) | JP5409790B2 (ja) |
WO (1) | WO2010027112A1 (ja) |
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KR20170029622A (ko) | 2014-07-17 | 2017-03-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 캐러셀 배치 증착 반응기를 사용하여 코발트 층을 증착하기 위한 방법들 및 장치 |
US10094023B2 (en) | 2014-08-01 | 2018-10-09 | Applied Materials, Inc. | Methods and apparatus for chemical vapor deposition of a cobalt layer |
Citations (2)
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JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
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US6258707B1 (en) * | 1999-01-07 | 2001-07-10 | International Business Machines Corporation | Triple damascence tungsten-copper interconnect structure |
US6656831B1 (en) * | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6720717B2 (en) | 2001-09-25 | 2004-04-13 | Matsushita Electric Works, Ltd. | Field emission-type electron source |
KR100555541B1 (ko) * | 2003-12-23 | 2006-03-03 | 삼성전자주식회사 | 코발트 실리사이드막 형성방법 및 그 형성방법을 이용한반도체 장치의 제조방법 |
KR20060032919A (ko) * | 2004-10-13 | 2006-04-18 | 삼성전자주식회사 | 플라즈마를 사용하여 반도체 소자의 오오믹층 및 장벽금속막을 형성하는 화학기상증착 방법 |
US8721846B2 (en) | 2004-11-30 | 2014-05-13 | Tokyo Electron Limited | Method of forming film, film forming apparatus and storage medium |
KR101334221B1 (ko) | 2007-09-03 | 2013-11-29 | 주식회사 원익아이피에스 | 다층금속박막 제조 방법 및 장치 |
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- 2008-09-04 US US13/060,404 patent/US8980742B2/en active Active
- 2008-09-04 WO PCT/KR2008/005235 patent/WO2010027112A1/en active Application Filing
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
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US20110151664A1 (en) | 2011-06-23 |
US8980742B2 (en) | 2015-03-17 |
WO2010027112A1 (en) | 2010-03-11 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |