JP2012500493A - Sn膜におけるウイスカの軽減 - Google Patents
Sn膜におけるウイスカの軽減 Download PDFInfo
- Publication number
- JP2012500493A JP2012500493A JP2011523783A JP2011523783A JP2012500493A JP 2012500493 A JP2012500493 A JP 2012500493A JP 2011523783 A JP2011523783 A JP 2011523783A JP 2011523783 A JP2011523783 A JP 2011523783A JP 2012500493 A JP2012500493 A JP 2012500493A
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- JP
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- Prior art keywords
- tin
- dopant
- concentration
- electronic device
- creep
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/04—Diffusion into selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49534—Multi-layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/07—Electric details
- H05K2201/0753—Insulation
- H05K2201/0769—Anti metal-migration, e.g. avoiding tin whisker growth
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Aは、経験的な物質係数(empirical materials coefficient)、
μは、温度に依存するせん断弾性率、
Rは、気体定数、
Tは、絶対温度、
bは、ベルガーのベクトル(Berger’s vector)、
GSは、平均結晶粒度、
pは、ある定数、
Eaは、有効活性化エネルギー、
σは、加えられた応力、
nは、応力べき指数(stress exponent)である。
Claims (22)
- 表面を有する導電性金属リードと、
前記表面を覆うはんだ前コーティングであり、本質的に、スズと、Alまたは希土類元素から選択された1種または数種のドーパントとからなるはんだ前コーティングと
を備える電子デバイス。 - 前記はんだ前コーティングが、本質的に、スズと、前記ドーパントのうちのただ1種のドーパントとからなる、請求項1に記載の電子デバイス。
- 前記導電性リードがリード・フレームの一部である、請求項1に記載の電子デバイス。
- 前記希土類ドーパントが、Gd、Yb、Eu、NdおよびCeからなる群から選択された、請求項1に記載の電子デバイス。
- 前記ドーパントが希土類元素であり、前記はんだ前コーティング中の前記ドーパントの濃度が約0.1重量%から約7重量%である、請求項1に記載の電子デバイス。
- 前記濃度が、約1.5重量%から約3.5重量%である、請求項5に記載の電子デバイス。
- 前記ドーパントがAlであり、前記はんだ前コーティング中の前記ドーパントの濃度が約0.1重量%から約4重量%である、請求項1に記載の電子デバイス。
- 前記濃度が、約1重量%から約2重量%である、請求項7に記載の電子デバイス。
- 前記はんだ前コーティングの厚さが、約0.1μmから約50μmの厚さを有する、請求項1に記載の電子デバイス。
- 前記導電性リードが、
プリント回路相互接続、
コネクタ、
デバイス・パッケージ・リード、および
電線
からなる群から選択された、請求項1に記載の電子デバイス。 - 前記はんだ前コーティングを含むデバイス・パッケージまたはヒート・シンクをさらに備える、請求項1に記載の電子デバイス。
- 電気リードの上にはんだ前コーティングを形成する方法であって、
表面を有する導電性金属リードを提供すること、
結晶粒界領域によって分離された結晶粒を含むスズ層を前記表面を覆って形成すること、および
前記スズ層に、Alまたは希土類元素から選択された1種または数種の平均濃度のドーパントを、前記結晶粒界領域における前記1種または数種のドーパントの濃度が前記平均濃度よりも相当に高くなるようにドープすること
を含む方法。 - 前記はんだ前コーティングが、Alと希土類元素のうちの少なくとも2つを含む、請求項11に記載の方法。
- 前記ドーパントが、前記はんだ前コーティング中で約0.1重量%から約4重量%の濃度を有するAlである、請求項11に記載の方法。
- 前記ドーパントが、前記はんだ前コーティング中で約1重量%から約2重量%の濃度を有するAlである、請求項11に記載の方法。
- 前記ドーパントが、Gd、Yb、Eu、NdおよびCeからなる群から選択された、請求項11に記載の方法。
- 前記ドーパントが、前記はんだ前コーティング中で約0.1重量%から約7重量%の濃度を有する希土類元素である、請求項16に記載の方法。
- 前記ドーパントが、前記はんだ前コーティング中で約1.5重量%から約3.5重量%の濃度を有する、請求項17に記載の方法。
- 前記はんだ前コーティングの厚さが約0.1μmから約50μmである、請求項11に記載の方法。
- 前記導電性金属リードがリード・フレームである、請求項11に記載の方法。
- 前記ドーピングの前に前記スズ層を形成する、請求項11に記載の方法。
- 前記ドーパントが、前記結晶粒界を経由して前記スズ層中へ拡散する、請求項11に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2008/073850 WO2010021624A1 (en) | 2008-08-21 | 2008-08-21 | Mitigation of whiskers in sn-films |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014095711A Division JP5922702B2 (ja) | 2014-05-07 | 2014-05-07 | Sn膜におけるウイスカの軽減 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012500493A true JP2012500493A (ja) | 2012-01-05 |
Family
ID=40548639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011523783A Pending JP2012500493A (ja) | 2008-08-21 | 2008-08-21 | Sn膜におけるウイスカの軽減 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8653375B2 (ja) |
EP (1) | EP2329698A1 (ja) |
JP (1) | JP2012500493A (ja) |
KR (1) | KR20110044793A (ja) |
CN (1) | CN102132638B (ja) |
TW (1) | TWI399461B (ja) |
WO (1) | WO2010021624A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010021624A1 (en) | 2008-08-21 | 2010-02-25 | Agere Systems, Inc. | Mitigation of whiskers in sn-films |
EP2395131A4 (en) | 2009-02-06 | 2013-02-06 | Kenji Dewaki | BATH FOR THE SEPARATION OF SILVER-CONTAINING ALLOY AND METHOD FOR ELECTROLYTIC DEPOSITION USING THEREOF |
EP2460910B1 (en) * | 2009-07-31 | 2014-11-05 | Shinji Dewaki | Tin-containing alloy plating bath, electroplating method using same, and base having electroplated material deposited thereon |
US8907225B1 (en) * | 2013-04-11 | 2014-12-09 | The United States Of America As Represented By The Secretary Of The Navy | Structures and methods related to detection, sensing, and/or mitigating undesirable structures or intrusion events on structures |
Citations (8)
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JPS59123394A (ja) * | 1982-12-29 | 1984-07-17 | Fujitsu Ltd | 共同加入電話方式 |
JPH07266080A (ja) * | 1994-03-25 | 1995-10-17 | Toyota Central Res & Dev Lab Inc | はんだ材料およびその製造方法 |
JP2001047276A (ja) * | 1999-06-02 | 2001-02-20 | Sony Corp | はんだ材料 |
JP2002339097A (ja) * | 2001-05-11 | 2002-11-27 | Lucent Technol Inc | 近表面をドープしたスズまたはスズ合金で被覆された金属製品 |
JP2003023123A (ja) * | 2001-07-09 | 2003-01-24 | Shindo Denshi Kogyo Kk | 回路基板および回路基板の製造方法 |
JP2003211283A (ja) * | 2002-01-22 | 2003-07-29 | Japan Science & Technology Corp | 鉛フリーはんだ材料 |
JP2007294735A (ja) * | 2006-04-26 | 2007-11-08 | Shinko Electric Ind Co Ltd | 実装基板 |
JP2008031550A (ja) * | 2006-06-26 | 2008-02-14 | Hitachi Cable Ltd | PbフリーのSn系材料及び配線用導体並びに端末接続部並びにPbフリーはんだ合金 |
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JPS5935694A (ja) | 1982-08-23 | 1984-02-27 | Mitsubishi Electric Corp | 錫ウイスカ発生防止法 |
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US4806704A (en) * | 1987-06-08 | 1989-02-21 | General Electric Company | Metal matrix composite and structure using metal matrix composites for electronic applications |
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JP2008150690A (ja) | 2006-12-20 | 2008-07-03 | Hitachi Ltd | 金属条、コネクタ、および金属条の製造方法 |
WO2010021624A1 (en) | 2008-08-21 | 2010-02-25 | Agere Systems, Inc. | Mitigation of whiskers in sn-films |
-
2008
- 2008-08-21 WO PCT/US2008/073850 patent/WO2010021624A1/en active Application Filing
- 2008-08-21 US US13/059,502 patent/US8653375B2/en active Active
- 2008-08-21 KR KR1020117006285A patent/KR20110044793A/ko active IP Right Grant
- 2008-08-21 CN CN200880130797.XA patent/CN102132638B/zh not_active Expired - Fee Related
- 2008-08-21 EP EP08819964A patent/EP2329698A1/en not_active Withdrawn
- 2008-08-21 JP JP2011523783A patent/JP2012500493A/ja active Pending
-
2009
- 2009-08-17 TW TW098127625A patent/TWI399461B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123394A (ja) * | 1982-12-29 | 1984-07-17 | Fujitsu Ltd | 共同加入電話方式 |
JPH07266080A (ja) * | 1994-03-25 | 1995-10-17 | Toyota Central Res & Dev Lab Inc | はんだ材料およびその製造方法 |
JP2001047276A (ja) * | 1999-06-02 | 2001-02-20 | Sony Corp | はんだ材料 |
JP2002339097A (ja) * | 2001-05-11 | 2002-11-27 | Lucent Technol Inc | 近表面をドープしたスズまたはスズ合金で被覆された金属製品 |
JP2003023123A (ja) * | 2001-07-09 | 2003-01-24 | Shindo Denshi Kogyo Kk | 回路基板および回路基板の製造方法 |
JP2003211283A (ja) * | 2002-01-22 | 2003-07-29 | Japan Science & Technology Corp | 鉛フリーはんだ材料 |
JP2007294735A (ja) * | 2006-04-26 | 2007-11-08 | Shinko Electric Ind Co Ltd | 実装基板 |
JP2008031550A (ja) * | 2006-06-26 | 2008-02-14 | Hitachi Cable Ltd | PbフリーのSn系材料及び配線用導体並びに端末接続部並びにPbフリーはんだ合金 |
Also Published As
Publication number | Publication date |
---|---|
KR20110044793A (ko) | 2011-04-29 |
WO2010021624A1 (en) | 2010-02-25 |
US20110155418A1 (en) | 2011-06-30 |
TW201016896A (en) | 2010-05-01 |
EP2329698A1 (en) | 2011-06-08 |
TWI399461B (zh) | 2013-06-21 |
CN102132638B (zh) | 2014-01-29 |
US8653375B2 (en) | 2014-02-18 |
CN102132638A (zh) | 2011-07-20 |
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