JP2012256769A - Semiconductor device and manufacturing the same - Google Patents
Semiconductor device and manufacturing the same Download PDFInfo
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- JP2012256769A JP2012256769A JP2011129751A JP2011129751A JP2012256769A JP 2012256769 A JP2012256769 A JP 2012256769A JP 2011129751 A JP2011129751 A JP 2011129751A JP 2011129751 A JP2011129751 A JP 2011129751A JP 2012256769 A JP2012256769 A JP 2012256769A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000011347 resin Substances 0.000 claims abstract description 124
- 229920005989 resin Polymers 0.000 claims abstract description 124
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 238000007639 printing Methods 0.000 claims abstract description 12
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 5
- 238000001179 sorption measurement Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7615—Means for depositing
- H01L2224/76151—Means for direct writing
- H01L2224/76155—Jetting means, e.g. ink jet
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
- H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
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- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Abstract
Description
本発明は、搭載部材に形成した素子搭載凹部内に半導体素子を搭載し、該半導体素子上面の電極部と該搭載部材上面の電極部とを配線で接続した半導体装置及びその製造方法に関する発明である。 The present invention relates to a semiconductor device in which a semiconductor element is mounted in an element mounting recess formed in a mounting member, and an electrode portion on the upper surface of the semiconductor element and an electrode portion on the upper surface of the mounting member are connected by wiring, and a manufacturing method thereof. is there.
従来より、半導体素子の実装工程では、半導体素子を搭載部材(回路基板、リードフレーム等)にダイボンドした後に、該半導体素子の電極部と搭載部材の電極部との間をワイヤボンディングで配線するのが一般的である。 Conventionally, in the mounting process of a semiconductor element, after the semiconductor element is die-bonded to a mounting member (circuit board, lead frame, etc.), wiring between the electrode part of the semiconductor element and the electrode part of the mounting member is performed by wire bonding. Is common.
しかし、特許文献1(特許第3992038号公報)に記載されているように、ワイヤボンディングを行うときの機械的なストレスによって不良が発生する可能性があるため、ワイヤボンディングに代わる接続信頼性の高い実装構造を低コストで実現することを目的として、配線基板上に搭載した半導体素子の周囲に流動性の樹脂材料をディスペンサで吐出して、半導体素子の上面と配線基板の表面との間を傾斜面でつなぐ樹脂スロープを形成した後、半導体素子上面の電極部と配線基板の電極部との間を接続する配線パターンを、インクジェット等の液滴吐出法により樹脂スロープ上に形成する配線技術が提案されている。 However, as described in Patent Document 1 (Japanese Patent No. 3992038), there is a possibility that defects may occur due to mechanical stress when wire bonding is performed. Therefore, connection reliability that replaces wire bonding is high. In order to realize the mounting structure at a low cost, a fluid resin material is discharged around the semiconductor element mounted on the wiring board with a dispenser, and the upper surface of the semiconductor element and the surface of the wiring board are inclined. Proposed wiring technology to form a wiring pattern that connects the electrode part on the upper surface of the semiconductor element and the electrode part of the wiring board on the resin slope by the droplet discharge method such as inkjet after forming the resin slope connecting the surfaces Has been.
上記特許文献1の実装構造では、半導体素子上面の電極部と配線基板の電極部との間の配線経路に半導体素子の高さ相当分の段差ができるため、配線パターンを液滴吐出法で形成するには、半導体素子の側面上端から配線基板上面に跨がる樹脂スロープを形成して、半導体素子上面の電極部と配線基板の電極部との間を、段差のない傾斜面で結ぶ必要がある。 In the mounting structure disclosed in Patent Document 1, since a step corresponding to the height of the semiconductor element is formed in the wiring path between the electrode part on the upper surface of the semiconductor element and the electrode part of the wiring substrate, the wiring pattern is formed by a droplet discharge method. In order to achieve this, it is necessary to form a resin slope that extends from the upper end of the side surface of the semiconductor element to the upper surface of the wiring board, and connect the electrode part on the upper surface of the semiconductor element and the electrode part of the wiring board with an inclined surface having no step is there.
そこで、搭載部材に形成した素子搭載凹部内に半導体素子を搭載することで、半導体素子上面の電極部と該搭載部材の素子搭載凹部の外側に設けた電極部とを同一高さとしたものがある。このような構造に対しては、特許文献2(特開2005−50911号公報)に記載されているように、搭載部材の素子搭載凹部の内周側面と半導体素子の外周側面との間の隙間(溝)に絶縁体を埋め込むことで、半導体素子上面の電極部と搭載部材の電極部との間の配線経路を平坦化して、該配線経路にインクジェット等の液滴吐出法で導電性のインクを吐出して配線を形成することが提案されている。 Therefore, there is one in which the semiconductor element is mounted in the element mounting recess formed in the mounting member, so that the electrode portion on the upper surface of the semiconductor element and the electrode portion provided outside the element mounting recess of the mounting member have the same height. . For such a structure, as described in Patent Document 2 (Japanese Patent Laid-Open No. 2005-50911), a gap between the inner peripheral side surface of the element mounting recess of the mounting member and the outer peripheral side surface of the semiconductor element. By embedding an insulator in the (groove), the wiring path between the electrode part on the upper surface of the semiconductor element and the electrode part of the mounting member is flattened, and conductive ink is applied to the wiring path by a droplet discharge method such as inkjet. It has been proposed to form a wiring by discharging the liquid.
搭載部材の素子搭載凹部内に搭載する半導体素子は、少し寸法が異なっても、機能的に同等の半導体素子であれば、同じ仕様の搭載部材の素子搭載凹部内に搭載可能であり、搭載部材を共通化してコストダウンが可能である。 A semiconductor element to be mounted in the element mounting recess of the mounting member can be mounted in the element mounting recess of the mounting member of the same specification as long as it is a functionally equivalent semiconductor element even if the dimensions are slightly different. It is possible to reduce the cost by sharing the.
しかし、上記特許文献2の配線技術では、半導体素子上面の電極部と搭載部材の電極部の高さ位置が同一である必要があるため、高さ寸法が異なる半導体素子に対しては、その高さ寸法に応じて素子搭載凹部の高さ寸法(搭載部材の電極部の高さ位置)が異なる搭載部材を使用する必要があり、搭載部材を共通化できない。 However, in the wiring technique disclosed in Patent Document 2, the height positions of the electrode portion on the upper surface of the semiconductor element and the electrode portion of the mounting member need to be the same. It is necessary to use a mounting member in which the height dimension of the element mounting recess (the height position of the electrode portion of the mounting member) differs according to the height dimension, and the mounting member cannot be shared.
そこで、本発明が解決しようとする課題は、搭載部材の素子搭載凹部内に半導体素子を搭載した半導体装置において、高さ寸法の異なる半導体素子を搭載する搭載部材を共通化することが可能となり、搭載部材の共通化によるコストダウンを実現できる半導体装置及びその製造方法を提供することである。 Therefore, the problem to be solved by the present invention is that in a semiconductor device in which a semiconductor element is mounted in an element mounting recess of a mounting member, it is possible to share a mounting member on which semiconductor elements having different height dimensions are mounted, It is an object to provide a semiconductor device and a method for manufacturing the same that can realize cost reduction by using a common mounting member.
上記課題を解決するために、請求項1に係る発明は、搭載部材に形成した素子搭載凹部内に半導体素子を搭載し、該半導体素子上面の電極部と該搭載部材上面の電極部とを配線で接続した半導体装置において、前記素子搭載凹部内に搭載する前記半導体素子の高さ位置を該半導体素子上面の電極部の高さ位置が該搭載部材上面の電極部の高さ位置と一致するように調整する素子高さ位置調整手段を備え、前記素子搭載凹部内の前記半導体素子の周囲の隙間に絶縁性樹脂を充填して該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化して、該配線経路に前記配線を形成したものである。 In order to solve the above-mentioned problem, the invention according to claim 1 is directed to mounting a semiconductor element in an element mounting recess formed in the mounting member, and wiring the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member. In the semiconductor device connected in the above, the height position of the semiconductor element mounted in the element mounting recess is set so that the height position of the electrode part on the upper surface of the semiconductor element matches the height position of the electrode part on the upper surface of the mounting member. An element height position adjusting means for adjusting the gap between the semiconductor element in the element mounting recess and filling the insulating resin with a gap between the electrode part on the upper surface of the semiconductor element and the electrode part on the upper surface of the mounting member. The wiring path between them is flattened with the insulating resin, and the wiring is formed in the wiring path.
この構成では、素子搭載凹部内に搭載する半導体素子の高さ位置を該半導体素子上面の電極部の高さ位置が該搭載部材上面の電極部の高さ位置と一致するように調整する素子高さ位置調整手段を備えているため、半導体素子の高さ寸法が異なっていても、素子高さ位置調整手段によって半導体素子上面の電極部の高さ位置を搭載部材上面の電極部の高さ位置と一致させて、該半導体素子上面の電極部と該搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化して配線することができる。これにより、高さ寸法の異なる半導体素子を搭載する搭載部材を共通化することが可能となり、搭載部材の共通化によるコストダウンを実現できる。 In this configuration, the height of the semiconductor element mounted in the element mounting recess is adjusted so that the height position of the electrode portion on the upper surface of the semiconductor element coincides with the height position of the electrode portion on the upper surface of the mounting member. The height position of the electrode part on the upper surface of the semiconductor element is adjusted by the element height position adjusting means even if the height dimension of the semiconductor element is different. The wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member can be flattened with the insulating resin for wiring. As a result, it is possible to share the mounting member on which the semiconductor elements having different height dimensions are mounted, and it is possible to reduce the cost by sharing the mounting member.
この場合、素子高さ位置調整手段として、別体のスペーサを用いても良いが、厚みの異なる複数のスペーサを用意しなければならない。 In this case, a separate spacer may be used as the element height position adjusting means, but a plurality of spacers having different thicknesses must be prepared.
そこで、請求項2のように、素子高さ位置調整手段は、配線経路を平坦化する絶縁性樹脂を素子搭載凹部の底面と半導体素子の下面との間にも充填して形成するようにしても良い。この請求項2の構成は、後述する請求項5,6の製造方法により能率良く製造することができる。 Therefore, as described in claim 2, the element height position adjusting means is formed by filling the insulating resin for flattening the wiring path between the bottom surface of the element mounting recess and the lower surface of the semiconductor element. Also good. The structure of claim 2 can be efficiently manufactured by the manufacturing method of claims 5 and 6 described later.
或は、請求項3のように、素子高さ位置調整手段は、予め素子搭載凹部内に半導体素子の高さ位置の調整に必要な量の樹脂を注入して形成し、該素子高さ位置調整手段上に該半導体素子を搭載するようにしても良い。この請求項3の構成は、後述する請求項8の製造方法により能率良く製造することができる。 Alternatively, the element height position adjusting means is formed by injecting an amount of resin necessary for adjusting the height position of the semiconductor element into the element mounting recess in advance. The semiconductor element may be mounted on the adjusting means. The structure of claim 3 can be efficiently manufactured by the manufacturing method of claim 8 described later.
この場合、半導体素子上面の電極部と該搭載部材上面の電極部との間の配線経路が絶縁性樹脂で平坦化されているため、請求項4のように、半導体素子上面の電極部と搭載部材上面の電極部との間を接続する配線は、液滴吐出法又は印刷法により形成すると良い。ここで、液滴吐出法では、インクジェット、ディスペンサ等により導電材料を配線経路上に吐出して配線パターンを形成する。印刷法では、スクリーン印刷等により配線パターンを形成する。 In this case, since the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is flattened with an insulating resin, the electrode portion on the upper surface of the semiconductor element and the mounting are mounted. The wiring connecting between the electrode portions on the upper surface of the member is preferably formed by a droplet discharge method or a printing method. Here, in the droplet discharge method, a conductive material is discharged onto a wiring path by an ink jet, a dispenser or the like to form a wiring pattern. In the printing method, a wiring pattern is formed by screen printing or the like.
前述した請求項2の半導体装置を製造する場合は、請求項5のように、素子搭載凹部の容積より半導体素子の体積分だけ少ない量の液状の絶縁性樹脂を該素子搭載凹部内に注入する工程と、吸着ノズルに半導体素子を吸着して該半導体素子を前記素子搭載凹部内の絶縁性樹脂の液中に浸すように下降させて該半導体素子上面の電極部の高さ位置が前記搭載部材上面の電極部の高さ位置と一致したときに該半導体素子の下降をストップさせる素子セット工程と、前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化し、前記吸着ノズルによる該半導体素子の吸着を解除して該吸着ノズルを元の位置へ戻す工程と、前記配線経路に配線を形成する配線形成工程とを行うようにすれば良い。 When manufacturing the semiconductor device according to claim 2 described above, as in claim 5, a liquid insulating resin in an amount smaller than the volume of the element mounting recess by the volume of the semiconductor element is injected into the element mounting recess. And a step of adsorbing the semiconductor element to the adsorption nozzle and lowering the semiconductor element so as to be immersed in the liquid of the insulating resin in the element mounting recess, and the height position of the electrode portion on the upper surface of the semiconductor element is the mounting member An element setting step for stopping the lowering of the semiconductor element when it coincides with the height position of the electrode portion on the upper surface, and the insulating resin in the element mounting recess is cured to fix the semiconductor element with the insulating resin In addition, the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is flattened with the insulating resin, and the suction of the semiconductor element by the suction nozzle is released to return the suction nozzle to the original position. Return to position A step, may be performed and a wiring forming step of forming a wiring on the wiring path.
或は、請求項6のように、吸着ノズルに半導体素子を吸着して該半導体素子を前記素子搭載凹部内に下降させて該半導体素子上面の電極部の高さ位置が搭載部材上面の電極部の高さ位置と一致したときに該半導体素子の下降をストップさせる素子セット工程と、前記素子搭載凹部内の半導体素子の周囲の隙間に液状の絶縁性樹脂を注入して該絶縁性樹脂の液面が該半導体素子上面の電極部と同一高さになったときに該絶縁性樹脂の注入を停止する工程と、前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化して、前記吸着ノズルによる該半導体素子の吸着を解除して該吸着ノズルを元の位置へ戻す工程と、前記配線経路に配線を形成する配線形成工程とを行うようにしても良い。 Alternatively, the semiconductor element is adsorbed by the adsorption nozzle and the semiconductor element is lowered into the element mounting recess so that the height position of the electrode portion on the upper surface of the semiconductor element is the electrode portion on the upper surface of the mounting member. An element setting step for stopping the lowering of the semiconductor element when it coincides with the height position of the semiconductor element, and injecting a liquid insulating resin into a gap around the semiconductor element in the element mounting recess, Stopping the injection of the insulating resin when the surface is flush with the electrode portion on the upper surface of the semiconductor element; and curing the insulating resin in the element mounting recess to make the insulating element While fixing with resin, the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is flattened with the insulating resin, and the suction of the semiconductor element by the suction nozzle is released. Return the suction nozzle to its original position And extent, may be performed and a wiring forming step of forming a wiring on the wiring path.
上記請求項5の製造方法と請求項6の製造方法との相違は、請求項5では、素子搭載凹部内に絶縁性樹脂を注入した後に、半導体素子を素子搭載凹部内にセットするのに対して、請求項6では、半導体素子を素子搭載凹部内にセットした後に、素子搭載凹部内の半導体素子の周囲の隙間に絶縁性樹脂を注入するようにしている。請求項5,6のいずれの製造方法でも、請求項2の半導体装置を能率良く製造することができる。 The difference between the manufacturing method of claim 5 and the manufacturing method of claim 6 is that, in claim 5, the semiconductor element is set in the element mounting recess after the insulating resin is injected into the element mounting recess. According to the sixth aspect of the present invention, after the semiconductor element is set in the element mounting recess, the insulating resin is injected into the gap around the semiconductor element in the element mounting recess. According to any of the manufacturing methods of claims 5 and 6, the semiconductor device of claim 2 can be efficiently manufactured.
上記請求項5,6の製造方法において、素子搭載凹部内にセットする半導体素子の高さ位置の管理は、吸着ノズルの高さ位置(Z方向位置)を制御する機能を用いれば良いが、吸着ノズルの高さ位置の制御誤差や各部の寸法ばらつきによって半導体素子の高さ位置のずれが生じてしまう可能性がある。 In the manufacturing method according to claims 5 and 6, the height position of the semiconductor element set in the element mounting recess may be managed by using a function for controlling the height position (Z-direction position) of the suction nozzle. There is a possibility that a deviation in the height position of the semiconductor element may occur due to a control error in the height position of the nozzle and a dimensional variation in each part.
この対策として、請求項7のように、吸着ノズルには、素子セット工程で該吸着ノズルに吸着した半導体素子上面の電極部の高さ位置が搭載部材上面の電極部の高さ位置と一致したときに該搭載部材上面に当接して該吸着ノズルの下降をストップさせるストッパーを設けるようにすると良い。このようにすれば、吸着ノズルに吸着した半導体素子を素子搭載凹部内に下降させる際に、吸着ノズルに設けたストッパーが搭載部材上面に当接したときに、半導体素子上面の電極部の高さ位置が搭載部材上面の電極部の高さ位置と一致して、それ以上の吸着ノズルの下降(半導体素子の下降)がストップされた状態となるため、吸着ノズルの高さ位置の制御誤差や各部の寸法ばらつきがあったとしても、確実に半導体素子上面の電極部の高さ位置を搭載部材上面の電極部の高さ位置と一致させることができる。 As a countermeasure against this, as in claim 7, in the suction nozzle, the height position of the electrode portion on the upper surface of the semiconductor element sucked by the suction nozzle in the element setting step coincides with the height position of the electrode portion on the upper surface of the mounting member. Sometimes, it is preferable to provide a stopper that comes into contact with the upper surface of the mounting member to stop the lowering of the suction nozzle. In this way, when the semiconductor element adsorbed by the adsorption nozzle is lowered into the element mounting recess, the height of the electrode portion on the upper surface of the semiconductor element when the stopper provided on the adsorption nozzle comes into contact with the upper surface of the mounting member. Since the position coincides with the height position of the electrode part on the upper surface of the mounting member and the further lowering of the suction nozzle (semiconductor element lowering) is stopped, the control error of the height position of the suction nozzle and each part Even if there is a dimensional variation, the height position of the electrode portion on the upper surface of the semiconductor element can be surely matched with the height position of the electrode portion on the upper surface of the mounting member.
また、前述した請求項3の半導体装置を製造する場合は、請求項8のように、素子搭載凹部内に液状の樹脂を注入して該樹脂の液面と搭載部材上面の電極部との高低差が半導体素子の高さ相当になったときに該樹脂の注入を停止して該樹脂を硬化させて素子高さ位置調整樹脂層(素子高さ位置調整手段)を形成する工程と、前記素子高さ位置調整樹脂層上に前記半導体素子を搭載する工程と、前記素子搭載凹部内の前記半導体素子の周囲の隙間に液状の絶縁性樹脂を注入して該絶縁性樹脂の液面が前記半導体素子上面の電極部の高さ位置と一致したときに該絶縁性樹脂の注入を停止する工程と、前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化する工程と、前記配線経路に配線を形成する配線形成工程とを行うようにしても良い。このようにすれば、半導体素子を搭載する素子高さ位置調整樹脂層の厚み寸法を、素子搭載凹部内に注入する樹脂量によって調整できるため、素子高さ位置調整樹脂層の厚み調整(ひいては半導体素子の高さ位置調整)が容易である。 When manufacturing the semiconductor device of claim 3 described above, as in claim 8, liquid resin is injected into the element mounting recess, and the height of the liquid surface of the resin and the electrode portion on the top surface of the mounting member is increased. Stopping the injection of the resin when the difference is equivalent to the height of the semiconductor element and curing the resin to form an element height position adjusting resin layer (element height position adjusting means); A step of mounting the semiconductor element on a height position adjustment resin layer; and a liquid insulating resin is injected into a gap around the semiconductor element in the element mounting recess, and the liquid level of the insulating resin is the semiconductor surface A step of stopping the injection of the insulating resin when it coincides with the height position of the electrode portion on the upper surface of the element; and the insulating resin in the element mounting recess is cured to fix the semiconductor element with the insulating resin. And an electrode portion on the upper surface of the semiconductor element and Planarizing by insulating resin wiring path between the electrode portion, it may be performed and a wiring forming step of forming a wiring on the wiring path. In this way, since the thickness dimension of the element height position adjusting resin layer for mounting the semiconductor element can be adjusted by the amount of resin injected into the element mounting recess, the thickness adjustment of the element height position adjusting resin layer (and thus the semiconductor) The adjustment of the height position of the element is easy.
また、半導体素子上面の電極部と該搭載部材上面の電極部との間の配線経路が絶縁性樹脂で平坦化されているため、請求項9のように、配線形成工程で、液滴吐出法又は印刷法により前記配線経路に配線を形成するようにすると良い。これにより、平坦な配線経路に配線を能率良く形成することができる。 In addition, since the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is flattened with an insulating resin, a droplet discharge method is performed in the wiring forming step as in claim 9. Alternatively, the wiring may be formed in the wiring path by a printing method. Thereby, wiring can be efficiently formed in a flat wiring path.
以下、本発明を実施するための形態をLEDパッケージに適用して具体化した3つの実施例1〜3を説明する。 Hereinafter, three Examples 1 to 3 in which the mode for carrying out the present invention is applied to an LED package will be described.
本発明の実施例1を図1及び図2に基づいて説明する。
まず、図1(d)に基づいてLEDパッケージの構成を説明する。
A first embodiment of the present invention will be described with reference to FIGS.
First, the configuration of the LED package will be described with reference to FIG.
搭載部材11は、リードフレーム、回路基板等で形成され、その中央部分に素子搭載凹部12が形成され、この素子搭載凹部12内に、半導体素子であるLED素子13(発光素子)が搭載されている。LED素子13の上面には、プラスとマイナスの2つの電極部14が形成され、搭載部材11の上面には、LED素子13上面の2つの電極部14と接続する2つの電極部15が形成されている。
The mounting
この場合、素子搭載凹部12の深さ寸法(高さ寸法)は、搭載するLED素子13の高さ寸法よりも大きくなっており、LED素子13の高さ寸法が素子搭載凹部12の深さ寸法(高さ寸法)以下であれば、高さ寸法が異なるLED素子13であっても、共通の搭載部材11の素子搭載凹部12内に搭載可能となっている。
In this case, the depth dimension (height dimension) of the
後述する製造方法により、素子搭載凹部12内に搭載するLED素子13の高さ位置を調整して、該LED素子13上面の電極部14の高さ位置を搭載部材11上面の電極部15の高さ位置と一致させる。この状態で、素子搭載凹部12内のLED素子13の周囲の隙間に絶縁性樹脂16を注入して硬化させて、該LED素子13を該絶縁性樹脂16で固定すると共に、該絶縁性樹脂16の上面の高さ位置を該LED素子13上面の電極部14や搭載部材11上面の電極部15の高さ位置と一致させることで、該LED素子13上面の電極部14と搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16で平坦化している。
The height position of the
この平坦な配線経路に配線17を形成して、LED素子13上面の電極部14と搭載部材11上面の電極部15との間を配線17で接続している。この配線17は、液滴吐出法又は印刷法等で形成している。ここで、液滴吐出法では、例えばインクジェット、ディスペンサ等で導電材料を配線経路上に吐出して配線パターンを形成する。印刷法では、スクリーン印刷等により配線パターンを形成する。その他、めっき法や導電板の貼付により配線17を形成しても良い。
A
次に、上記構成のLEDパッケージの製造工程を説明する。
まず、絶縁性樹脂注入工程で、図1(a)に示すように、ディスペンサ20(又はインクジェット装置)によって紫外線硬化型又は熱硬化型の液状の絶縁性樹脂16を素子搭載凹部12内に注入する。この際、絶縁性樹脂16の注入量は、素子搭載凹部12の容積よりLED素子13の体積分だけ少ない量に設定する。
Next, the manufacturing process of the LED package having the above configuration will be described.
First, in the insulating resin injection step, as shown in FIG. 1A, an ultraviolet curable or thermosetting liquid insulating
この後、素子搭載凹部12内の液状の絶縁性樹脂16を硬化させる前に、素子セット工程に進み、図1(b)に示すように、ダイボンダ(又は部品実装機)の吸着ノズル21にLED素子13を吸着して該LED素子13を素子搭載凹部12内の絶縁性樹脂16の液中に浸すように下降させて、図1(c)に示すように、LED素子13上面の電極部14の高さ位置が搭載部材11上面の電極部15の高さ位置と一致したときに吸着ノズル21の下降(LED素子13の下降)をストップさせる。この時点で、素子搭載凹部12内の絶縁性樹脂16の液面がLED素子13上面の電極部14や搭載部材11上面の電極部15と同一高さまで上昇した状態となる。
Thereafter, before the liquid insulating
この際、素子搭載凹部12内にセットするLED素子13の高さ位置の管理は、吸着ノズル21の高さ位置(Z方向位置)を制御する機能を用いれば良いが、吸着ノズル21の高さ位置の制御誤差や各部の寸法ばらつきによってLED素子13の高さ位置のずれが生じてしまう可能性がある。
At this time, the height position of the
この対策として、本実施例1では、図1(c)及び図2に示すように、吸着ノズル21に、該吸着ノズル21の下降停止位置を決めるストッパー22を設け、素子セット工程で、吸着ノズル21に吸着したLED素子13上面の電極部14の高さ位置が搭載部材11上面の電極部15の高さ位置と一致したときに、該吸着ノズル21のストッパー22が該搭載部材11上面に当接して該吸着ノズル21の下降(LED素子13の下降)をストップさせる。
As a countermeasure against this, in the first embodiment, as shown in FIGS. 1C and 2, the
更に、本実施例1では、吸着ノズル21の高さ位置の制御誤差や各部の寸法ばらつきを機械的に吸収するために、図2に示すように、ノズルホルダ23に吸着ノズル21を上下動可能に支持させ、ノズルホルダ23内に設けたスプリング等の付勢手段により吸着ノズル21を下方に付勢している。素子セット工程では、吸着ノズル21の高さ位置の制御誤差や各部の寸法ばらつきを見込んで、ノズルホルダ23を余分に下降させて、吸着ノズル21のストッパー22が搭載部材11上面に当接した後は、ノズルホルダ23の下降に応じて吸着ノズル21がノズルホルダ23内の付勢手段を押し上げる。これにより、吸着ノズル21のストッパー22を搭載部材11上面に確実に当接させて、吸着ノズル21に吸着したLED素子13上面の電極部14の高さ位置を搭載部材11上面の電極部15の高さ位置に確実に一致させる。
Further, in the first embodiment, the
この後、樹脂硬化工程に進み、樹脂硬化装置(図示せず)により素子搭載凹部12内の絶縁性樹脂16を紫外線照射又は加熱して硬化させて、LED素子13を該絶縁性樹脂16で固定すると共に、該LED素子13上面の電極部14と搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16で平坦化する。この後、吸着ノズル21によるLED素子13の吸着を解除して該吸着ノズル21を元の位置へ戻す。本実施例1では、素子搭載凹部12の底面とLED素子13の下面との間に充填した絶縁性樹脂16の硬化層が特許請求の範囲でいう素子高さ位置調整手段として機能する。
Thereafter, the process proceeds to a resin curing step, and a resin curing device (not shown) cures the insulating
この後、配線形成工程に進み、図1(d)に示すように、液滴吐出法又は印刷法等で配線経路に配線17を形成して、LED素子13上面の電極部14と搭載部材11上面の電極部15との間を配線17で接続する。
Thereafter, the process proceeds to a wiring forming process, and as shown in FIG. 1D, a
以上説明した本実施例1では、素子搭載凹部12の容積よりLED素子13の体積分だけ少ない量の液状の絶縁性樹脂16を素子搭載凹部12内に注入し、LED素子13を素子搭載凹部12内の絶縁性樹脂16の液中に浸すように下降させて該LED素子13上面の電極部14の高さ位置を搭載部材11上面の電極部15の高さ位置と一致させた状態で、素子搭載凹部12内の絶縁性樹脂16を硬化させてLED素子13を該絶縁性樹脂16で固定すると共に、該LED素子13上面の電極部14と搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16で平坦化して、この配線経路に配線17を液滴吐出法又は印刷法等で形成するようにしたので、LED素子13の高さ寸法が異なっていても、LED素子13上面の電極部14の高さ位置を搭載部材11上面の電極部15の高さ位置と一致させて、該LED素子13上面の電極部14と該搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16で平坦化して配線17を形成することができる。これにより、高さ寸法の異なるLED素子13を搭載する搭載部材11を共通化することが可能となり、搭載部材11の共通化によるコストダウンを実現できる。
In the first embodiment described above, a liquid insulating
しかも、素子搭載凹部12内にセットするLED素子13の高さ位置を調整する手段として、別体のスペーサを用意する必要がなく、部品点数削減の要求も満たすことができる。
Moreover, it is not necessary to prepare a separate spacer as means for adjusting the height position of the
更に、本実施例1では、吸着ノズル21に、該吸着ノズル21の下降停止位置を決めるストッパー22を設け、素子セット工程で、吸着ノズル21に吸着したLED素子13上面の電極部14の高さ位置が搭載部材11上面の電極部15の高さ位置と一致したときに、該吸着ノズル21のストッパー22が該搭載部材11上面に当接して該吸着ノズル21の下降(LED素子13の下降)をストップさせるようにしたので、吸着ノズル21の高さ位置の制御誤差や各部の寸法ばらつきがあったとしても、確実にLED素子13上面の電極部14の高さ位置を搭載部材11上面の電極部15の高さ位置と一致させることができ、安定した高品質のLEDパッケージを製造できる。
Furthermore, in the first embodiment, the
次に、図3を用いて本発明の実施例2を説明する。但し、前記実施例1と実質的に同一部分については同一符号を付して説明を省略又は簡略化する。 Next, Embodiment 2 of the present invention will be described with reference to FIG. However, substantially the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified.
前記実施例1では、素子搭載凹部12内に絶縁性樹脂16を注入した後に、LED素子13を素子搭載凹部12内にセットするようにしたが、本実施例2では、LED素子13を素子搭載凹部12内にセットした後に、素子搭載凹部12内のLED素子13の周囲の隙間に絶縁性樹脂16を注入するようにしている。
In the first embodiment, the
本実施例2では、まず、図3(a)に示すように、ダイボンダ(又は部品実装機)の吸着ノズル21にLED素子13を吸着して該LED素子13を素子搭載凹部12内に下降させて、図3(b)に示すように、LED素子13上面の電極部14の高さ位置が搭載部材11上面の電極部15の高さ位置と一致したときに、該吸着ノズル21のストッパー22が該搭載部材11上面に当接して該吸着ノズル21の下降(LED素子13の下降)をストップさせる。
In the second embodiment, first, as shown in FIG. 3A, the
この後、絶縁性樹脂注入工程に進み、図3(c)に示すように、ディスペンサ20(又はインクジェット装置)によって紫外線硬化型又は熱硬化型の液状の絶縁性樹脂16を素子搭載凹部12内のLED素子13の周囲の隙間に注入し、該絶縁性樹脂16の液面がLED素子13上面の電極部14や搭載部材11上面の電極部15と同一高さになったときに、該絶縁性樹脂16の注入を停止する。
Thereafter, the process proceeds to an insulating resin injecting step, and as shown in FIG. 3C, the dispenser 20 (or an ink jet device) is used to dispose the ultraviolet curable or thermosetting liquid insulating
この後、樹脂硬化工程に進み、樹脂硬化装置(図示せず)により素子搭載凹部12内の絶縁性樹脂16を紫外線照射又は加熱して硬化させて、LED素子13を該絶縁性樹脂16で固定すると共に、該LED素子13上面の電極部14と搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16で平坦化する。この後、吸着ノズル21によるLED素子13の吸着を解除して該吸着ノズル21を元の位置へ戻す。本実施例2では、素子搭載凹部12の底面とLED素子13の下面との間に充填した絶縁性樹脂16の硬化層が特許請求の範囲でいう素子高さ位置調整手段として機能する。
Thereafter, the process proceeds to a resin curing step, and a resin curing device (not shown) cures the insulating
この後、配線形成工程に進み、図3(d)に示すように、液滴吐出法又は印刷法等で配線経路に配線17を形成して、LED素子13上面の電極部14と搭載部材11上面の電極部15との間を配線17で接続する。
Thereafter, the process proceeds to a wiring formation process, and as shown in FIG. 3D, the
以上説明した本実施例2でも、前記実施例1と同様の効果を得ることができる。 In the second embodiment described above, the same effect as that of the first embodiment can be obtained.
次に、図4を用いて本発明の実施例3を説明する。但し、前記実施例1と実質的に同一部分については同一符号を付して説明を省略又は簡略化する。 Next, Embodiment 3 of the present invention will be described with reference to FIG. However, substantially the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified.
本実施例3では、素子搭載凹部12内への絶縁性樹脂の注入を2工程に分け、1回目の絶縁性樹脂注入工程で、図4(a)に示すように、ディスペンサ20(又はインクジェット装置)によって素子搭載凹部12内にLED素子13の高さ位置の調整に必要な量の液状の絶縁性樹脂16aを注入する。具体的には、素子搭載凹部12内の絶縁性樹脂16aの液面と搭載部材11上面の電極部15との高低差がLED素子13の高さ相当になったときに、該絶縁性樹脂16aの注入を停止する。尚、1回目の絶縁性樹脂注入工程で注入する絶縁性樹脂16aは、電気伝導性のある材料、例えば金属ペーストとしても良く、特に熱伝導性の高い材料が望ましい。
In this third embodiment, the injection of the insulating resin into the
この後、素子搭載凹部12内の絶縁性樹脂16aを硬化させて、素子高さ位置調整樹脂層16a(素子高さ位置調整手段)を形成する。
Thereafter, the insulating
この後、素子搭載工程に進み、図4(b)に示すように、ダイボンダ(又は部品実装機)の吸着ノズル25にLED素子13を吸着して該LED素子13を素子搭載凹部12内の素子高さ位置調整樹脂層16a上に搭載する。これにより、LED素子13上面の電極部14の高さ位置が搭載部材11上面の電極部15の高さ位置と一致した状態となる。
Thereafter, the process proceeds to an element mounting step, and as shown in FIG. 4B, the
この後、2回目の絶縁性樹脂注入工程に進み、図4(c)に示すように、ディスペンサ20(又はインクジェット装置)によって素子搭載凹部12内のLED素子13の周囲の隙間に液状の絶縁性樹脂16bを注入して該絶縁性樹脂16bの液面がLED素子13上面の電極部14の高さ位置まで上昇したときに該絶縁性樹脂16bの注入を停止する。
Thereafter, the process proceeds to the second insulating resin injection step, and as shown in FIG. 4C, a liquid insulating property is formed in the gap around the
この後、樹脂硬化工程に進み、素子搭載凹部12内の絶縁性樹脂16bを硬化させて、LED素子13を該絶縁性樹脂16bで固定すると共に、該LED素子13上面の電極部14と搭載部材11上面の電極部15との間の配線経路を該絶縁性樹脂16bで平坦化する。
Thereafter, the process proceeds to a resin curing step, the insulating
この後、配線形成工程に進み、図4(d)に示すように、液滴吐出法又は印刷法等で配線経路に配線17を形成して、LED素子13上面の電極部14と搭載部材11上面の電極部15との間を配線17で接続する。
Thereafter, the process proceeds to a wiring forming process, and as shown in FIG. 4D, the
以上説明した本実施例3でも、前記実施例1と同様の効果を得ることができる。
尚、本発明は、上記各実施例1〜3のようなLED素子等の発光素子の搭載構造に限定されず、上面に電極部が設けられた様々な半導体素子の搭載構造に適用可能である等、要旨を逸脱しない範囲内で種々変更して実施できる。
Also in the third embodiment described above, the same effect as in the first embodiment can be obtained.
In addition, this invention is not limited to the mounting structure of light emitting elements, such as LED element like said each Examples 1-3, It is applicable to the mounting structure of various semiconductor elements with which the electrode part was provided in the upper surface. Various modifications can be made without departing from the scope of the invention.
11…搭載部材、12…素子搭載凹部、13…LED素子(半導体素子)、14,15…電極部、16…絶縁性樹脂(素子高さ位置調整手段),16a…素子高さ位置調整樹脂層(素子高さ位置調整手段)、16b…絶縁性樹脂、17…配線、20…ディスペンサ、21…吸着ノズル、22…ストッパー、23…ノズルホルダ、25…吸着ノズル
DESCRIPTION OF
Claims (9)
前記素子搭載凹部内に搭載する前記半導体素子の高さ位置を該半導体素子上面の電極部の高さ位置が該搭載部材上面の電極部の高さ位置と一致するように調整する素子高さ位置調整手段を備え、
前記素子搭載凹部内の前記半導体素子の周囲の隙間に絶縁性樹脂を充填して該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化して、該配線経路に前記配線を形成したことを特徴とする半導体装置。 In a semiconductor device in which a semiconductor element is mounted in an element mounting recess formed in a mounting member, and an electrode portion on the upper surface of the semiconductor element and an electrode portion on the upper surface of the mounting member are connected by wiring.
An element height position for adjusting the height position of the semiconductor element mounted in the element mounting recess so that the height position of the electrode portion on the upper surface of the semiconductor element coincides with the height position of the electrode portion on the upper surface of the mounting member Adjusting means,
A gap around the semiconductor element in the element mounting recess is filled with an insulating resin, and a wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is flattened with the insulating resin. A semiconductor device characterized in that the wiring is formed in the wiring path.
前記素子搭載凹部の容積より前記半導体素子の体積分だけ少ない量の液状の絶縁性樹脂を該素子搭載凹部内に注入する工程と、
吸着ノズルに前記半導体素子を吸着して該半導体素子を前記素子搭載凹部内の絶縁性樹脂の液中に浸すように下降させて該半導体素子上面の電極部の高さ位置が前記搭載部材上面の電極部の高さ位置と一致したときに該半導体素子の下降をストップさせる素子セット工程と、
前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化し、前記吸着ノズルによる該半導体素子の吸着を解除して該吸着ノズルを元の位置へ戻す工程と、
前記配線経路に前記配線を形成する配線形成工程と
を含むことを特徴とする半導体装置の製造方法。 In a method for manufacturing a semiconductor device in which a semiconductor element is mounted in an element mounting recess formed in a mounting member, and the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member are connected by wiring.
Injecting into the element mounting recess a liquid insulating resin in an amount less than the volume of the semiconductor element than the volume of the element mounting recess;
The semiconductor element is adsorbed by the suction nozzle and lowered so that the semiconductor element is immersed in the liquid of the insulating resin in the element mounting recess, so that the height position of the electrode portion on the upper surface of the semiconductor element is on the upper surface of the mounting member. An element setting step for stopping the descent of the semiconductor element when it coincides with the height position of the electrode part;
The insulating resin in the element mounting recess is cured to fix the semiconductor element with the insulating resin, and the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is insulated. Flattening with a functional resin, releasing the suction of the semiconductor element by the suction nozzle and returning the suction nozzle to the original position;
And a wiring forming step of forming the wiring in the wiring path.
吸着ノズルに前記半導体素子を吸着して該半導体素子を前記素子搭載凹部内に下降させて該半導体素子上面の電極部の高さ位置が前記搭載部材上面の電極部の高さ位置と一致したときに該半導体素子の下降をストップさせる素子セット工程と、
前記素子搭載凹部内の前記半導体素子の周囲の隙間に液状の絶縁性樹脂を注入して該絶縁性樹脂の液面が該半導体素子上面の電極部と同一高さになったときに該絶縁性樹脂の注入を停止する工程と、
前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化して、前記吸着ノズルによる該半導体素子の吸着を解除して該吸着ノズルを元の位置へ戻す工程と、
前記配線経路に前記配線を形成する配線形成工程と
を含むことを特徴とする半導体装置の製造方法。 In a method for manufacturing a semiconductor device in which a semiconductor element is mounted in an element mounting recess formed in a mounting member, and the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member are connected by wiring.
When the semiconductor element is attracted to the suction nozzle and the semiconductor element is lowered into the element mounting recess, and the height position of the electrode portion on the upper surface of the semiconductor element matches the height position of the electrode portion on the upper surface of the mounting member An element setting step for stopping the lowering of the semiconductor element;
When the liquid insulating resin is injected into the gap around the semiconductor element in the element mounting recess and the liquid level of the insulating resin is flush with the electrode part on the upper surface of the semiconductor element, the insulating property Stopping the resin injection;
The insulating resin in the element mounting recess is cured to fix the semiconductor element with the insulating resin, and the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is insulated. Flattening with a functional resin, releasing the suction of the semiconductor element by the suction nozzle and returning the suction nozzle to its original position;
And a wiring forming step of forming the wiring in the wiring path.
前記素子搭載凹部内に樹脂を注入して該樹脂の上面と前記搭載部材上面の電極部との高低差が前記半導体素子の高さ相当になったときに該樹脂の注入を停止して該樹脂を硬化させて素子高さ位置調整樹脂層を形成する工程と、
前記素子高さ位置調整樹脂層上に前記半導体素子を搭載する工程と、
前記素子搭載凹部内の前記半導体素子の周囲の隙間に液状の絶縁性樹脂を注入して該絶縁性樹脂の液面が前記半導体素子上面の電極部の高さ位置と一致したときに該絶縁性樹脂の注入を停止する工程と、
前記素子搭載凹部内の絶縁性樹脂を硬化させて前記半導体素子を該絶縁性樹脂で固定すると共に、該半導体素子上面の電極部と前記搭載部材上面の電極部との間の配線経路を該絶縁性樹脂で平坦化する工程と、
前記配線経路に前記配線を形成する配線形成工程と
を含むことを特徴とする半導体装置の製造方法。 In a method for manufacturing a semiconductor device in which a semiconductor element is mounted in an element mounting recess formed in a mounting member, and the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member are connected by wiring.
Resin is injected into the element mounting recess and injection of the resin is stopped when the height difference between the upper surface of the resin and the electrode portion on the upper surface of the mounting member corresponds to the height of the semiconductor element. Forming a device height position adjusting resin layer by curing
Mounting the semiconductor element on the element height position adjusting resin layer;
When a liquid insulating resin is injected into a gap around the semiconductor element in the element mounting recess, and the liquid level of the insulating resin coincides with the height position of the electrode part on the upper surface of the semiconductor element, the insulating property Stopping the resin injection;
The insulating resin in the element mounting recess is cured to fix the semiconductor element with the insulating resin, and the wiring path between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the upper surface of the mounting member is insulated. A step of flattening with a conductive resin;
And a wiring forming step of forming the wiring in the wiring path.
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