TWI566355B - Printed circuit board with electronic component and method for manufacturing same - Google Patents

Printed circuit board with electronic component and method for manufacturing same Download PDF

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Publication number
TWI566355B
TWI566355B TW103141290A TW103141290A TWI566355B TW I566355 B TWI566355 B TW I566355B TW 103141290 A TW103141290 A TW 103141290A TW 103141290 A TW103141290 A TW 103141290A TW I566355 B TWI566355 B TW I566355B
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Taiwan
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layer
conductive
electronic component
package structure
forming
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TW103141290A
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Chinese (zh)
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TW201618261A (en
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王峰
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碁鼎科技秦皇島有限公司
臻鼎科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Description

電子元件封裝結構及製作方法 Electronic component packaging structure and manufacturing method

本發明涉及電路板製作領域,尤其涉及一種電子元件封裝結構及製作方法。 The present invention relates to the field of circuit board manufacturing, and in particular, to an electronic component package structure and a manufacturing method thereof.

電子元件封裝結構可為電子元件提供電連接、保護、支撐、散熱、組裝等功效,以實現多引腳化,縮小封裝產品體積、改善電性能及散熱性、超高密度或多電子元件模組化的目的。 The electronic component package structure can provide electrical connection, protection, support, heat dissipation, assembly and other functions for the electronic component, thereby achieving multi-pinning, reducing the package product volume, improving electrical performance and heat dissipation, ultra-high density or multi-electronic component module. Purpose.

因此,有必要提供一種電子元件封裝結構及製作方法。 Therefore, it is necessary to provide an electronic component package structure and a manufacturing method thereof.

一種電子元件封裝結構的製作方法,包括步驟:提供銅箔,在所述銅箔表面形成第一導電線路層,所述第一導電線路層包括多個電性接觸墊及多個第一焊墊;在所述多個電性接觸墊表面形成多個導電柱,所述多個導電柱與所述多個電性接觸墊相電連接;在所述多個第一焊墊表面焊接第一電子元件;在所述第一導電線路層及所述導電柱的間隙形成第一介電層,並使所述第一介電層包覆所述第一電子元件;去除所述銅箔;在所述芯層封裝基板的第一電子元件側依次形成第二介電層及第二導電線路層,所述第二介電層內形成有第一導電盲孔,所述第一導電盲孔電連接所述第二導電線路層及導電柱;以及在所述第二導電線路層側形成第一 防焊層,其中,所述第一介電層的熱膨脹係數介於所述第一電子元件的熱膨脹係數與第一防焊層的熱膨脹係數之間,從而形成所述電子元件封裝結構。 A method for fabricating an electronic component package structure, comprising the steps of: providing a copper foil, forming a first conductive circuit layer on a surface of the copper foil, the first conductive circuit layer comprising a plurality of electrical contact pads and a plurality of first pads Forming a plurality of conductive pillars on the surface of the plurality of electrical contact pads, the plurality of conductive pillars being electrically connected to the plurality of electrical contact pads; soldering the first electrons on the surfaces of the plurality of first solder pads a first dielectric layer is formed in a gap between the first conductive circuit layer and the conductive pillar, and the first dielectric layer is coated on the first electronic component; the copper foil is removed; Forming a second dielectric layer and a second conductive circuit layer on the first electronic component side of the core package substrate, a first conductive blind via is formed in the second dielectric layer, and the first conductive via is electrically connected The second conductive circuit layer and the conductive pillar; and forming a first side on the second conductive circuit layer side a solder resist layer, wherein a thermal expansion coefficient of the first dielectric layer is between a thermal expansion coefficient of the first electronic component and a thermal expansion coefficient of the first solder resist layer, thereby forming the electronic component package structure.

一種電子元件封裝結構,包括第一介電層、嵌設於第一介電層一側的第一導電線路層、嵌設於第一介電層另一側且與所述第一導電線路層電連接的導電柱、埋設於第一介電層內部的第一電子元件、形成與所述第一介電層遠離所述第一導電線路層側的第二介電層、形成於第二介電層的遠離第一介電層的表面的第二導電線路層、貫穿第二介電層並電連接所述導電柱與第二導電線路層的第一導電盲孔以及形成於所述第二導電線路層側的第一防焊層;所述第一導電線路層包括多個電性接觸墊及多個第一焊墊,所述導電柱形成於所述多個電性接觸墊表面且電連接所述多個電性接觸墊,所述第一電子元件焊接於多個所述第一焊墊;所述第一介電層的熱膨脹係數介於所述第一電子元件的熱膨脹係數與第一防焊層的熱膨脹係數之間。 An electronic component package structure includes a first dielectric layer, a first conductive circuit layer embedded on one side of the first dielectric layer, and the other side of the first dielectric layer and the first conductive circuit layer An electrically connected conductive pillar, a first electronic component embedded in the first dielectric layer, a second dielectric layer formed on the side of the first conductive layer from the first conductive layer, and formed in the second dielectric layer a second conductive circuit layer of the electrical layer remote from the surface of the first dielectric layer, a first conductive blind via penetrating the second dielectric layer and electrically connecting the conductive pillar and the second conductive wiring layer, and formed in the second a first solder resist layer on the side of the conductive circuit layer; the first conductive circuit layer includes a plurality of electrical contact pads and a plurality of first pads, the conductive pillars are formed on the surface of the plurality of electrical contact pads and electrically Connecting the plurality of electrical contact pads, the first electronic component being soldered to the plurality of first pads; a coefficient of thermal expansion of the first dielectric layer being between a coefficient of thermal expansion of the first electronic component and a first Between the thermal expansion coefficients of a solder mask.

相較於先前技術,本發明實施例本案的第一電子元件形成於電子元件封裝結構內部,從而可以降低電子元件封裝結構的總厚度,有利於電子元件封裝結構的輕薄化。 Compared with the prior art, the first electronic component of the present invention is formed inside the electronic component package structure, so that the total thickness of the electronic component package structure can be reduced, which is advantageous for thinning and thinning of the electronic component package structure.

11‧‧‧承載板 11‧‧‧Loading board

12‧‧‧銅箔 12‧‧‧ copper foil

13‧‧‧熱塑性膠體層 13‧‧‧thermoplastic colloid layer

14‧‧‧第一導電線路層 14‧‧‧First conductive circuit layer

141‧‧‧電性接觸墊 141‧‧‧Electrical contact pads

142‧‧‧第一焊墊 142‧‧‧First pad

15‧‧‧第一光阻層 15‧‧‧First photoresist layer

16‧‧‧導電柱 16‧‧‧conductive column

17‧‧‧第二光阻層 17‧‧‧Second photoresist layer

18‧‧‧第一電子元件 18‧‧‧First electronic components

200‧‧‧第一電路板中間體 200‧‧‧First board intermediate

19‧‧‧錫膏 19‧‧‧ solder paste

20‧‧‧第一介電層 20‧‧‧First dielectric layer

220‧‧‧第二電路板中間體 220‧‧‧Second circuit board intermediate

240‧‧‧芯層封裝基板 240‧‧‧ core package substrate

21‧‧‧第二介電層 21‧‧‧Second dielectric layer

22‧‧‧第二導電線路層 22‧‧‧Second conductive circuit layer

23‧‧‧第三介電層 23‧‧‧ Third dielectric layer

24‧‧‧第三導電線路層 24‧‧‧ Third conductive circuit layer

25‧‧‧第一導電盲孔 25‧‧‧First conductive blind hole

26‧‧‧第二導電盲孔 26‧‧‧Second conductive blind hole

27‧‧‧第一防焊層 27‧‧‧First solder mask

271‧‧‧第一防焊層開口 271‧‧‧First solder mask opening

28‧‧‧第二防焊層 28‧‧‧Second solder mask

281‧‧‧第二防焊層開口 281‧‧‧Second solder mask opening

221,221’‧‧‧第二焊墊 221,221'‧‧‧second solder pad

241,241’‧‧‧第三焊墊 241,241'‧‧‧ Third pad

260‧‧‧第一電子元件封裝結構 260‧‧‧First electronic component package structure

29,29’‧‧‧第一錫球 29,29’‧‧‧First Tin Ball

30‧‧‧第二電子元件 30‧‧‧Second electronic components

31,31’‧‧‧第二錫球 31,31’‧‧‧Second Tin Ball

280‧‧‧第二電子元件封裝結構 280‧‧‧Second electronic component package structure

32‧‧‧另一電子元件封裝結構 32‧‧‧Another electronic component package structure

300‧‧‧第三電子元件封裝結構 300‧‧‧ Third electronic component package structure

圖1係本發明實施例提供的承載板上貼合銅箔後的剖視圖。 1 is a cross-sectional view of a carrier sheet provided with an embodiment of the present invention.

圖2係在圖1的銅箔表面形成圖案化的第一光阻層後的剖視圖。 2 is a cross-sectional view showing a patterned first photoresist layer formed on the surface of the copper foil of FIG. 1.

圖3係在圖2中的銅箔表面形成第一導電線路層後的剖視圖。 Figure 3 is a cross-sectional view showing the surface of the copper foil of Figure 2 after the first conductive wiring layer is formed.

圖4係在圖3的第一導電線路層表面形成圖案化的第二光阻層後的 剖視圖。 4 is a view showing the formation of a patterned second photoresist layer on the surface of the first conductive wiring layer of FIG. Cutaway view.

圖5係在圖4中的圖案化的第二光阻層間隙形成導電柱後的剖視圖。 5 is a cross-sectional view of the patterned second photoresist layer gap of FIG. 4 after forming a conductive pillar.

圖6係去除圖5中的第一及第二光阻層後的剖視圖。 Figure 6 is a cross-sectional view showing the first and second photoresist layers in Figure 5 removed.

圖7係將一第一電子元件焊接於圖6中的第一導電線路層表面後的剖視圖。 Figure 7 is a cross-sectional view showing a first electronic component soldered to the surface of the first conductive wiring layer of Figure 6.

圖8係在圖7中的第一導電線路層、導電柱間隙形成介電層並使介電層包覆所述第一電子元件後的剖視圖。 8 is a cross-sectional view showing the first conductive wiring layer, the conductive pillar gap of FIG. 7, forming a dielectric layer, and covering the first electronic component with a dielectric layer.

圖9係將圖8中的承載板及熱塑性膠體層分離去除得到兩個第二電路板中間體後的示意圖。 FIG. 9 is a schematic view showing the carrier plate and the thermoplastic colloid layer of FIG. 8 separated and separated to obtain two second circuit board intermediates.

圖10係去除圖9中的第二電路板中間體的銅箔後得到的一個芯層封裝基板的剖視圖。 Figure 10 is a cross-sectional view showing a core package substrate obtained by removing the copper foil of the second circuit board intermediate of Figure 9.

圖11係將圖10中的第二電路板中間體兩側增層得到第二及第二導電線路層後的示意圖。 FIG. 11 is a schematic view showing the second and second conductive circuit layers being layered on both sides of the second circuit board intermediate body of FIG. 10.

圖12係在圖11的第二及第三導電線路層表面形成防焊層後的剖視圖。 Figure 12 is a cross-sectional view showing the formation of a solder resist layer on the surfaces of the second and third conductive wiring layers of Figure 11 .

圖13係本案實施例在圖12從防焊層中暴露出來的第二及第三導電線路層表面形成錫球及在第二導電線路層表面焊接第二電子元件後的剖視圖。 Figure 13 is a cross-sectional view showing the formation of solder balls on the surfaces of the second and third conductive wiring layers exposed from the solder resist layer in Fig. 12 and the soldering of the second electronic component on the surface of the second conductive wiring layer.

圖14係本案另一實施例在圖12從防焊層中暴露出來的第二及第三導電線路層表面形成錫球及在第二導電線路層表面焊接另一電子元件封裝結構後的剖視圖。 FIG. 14 is a cross-sectional view showing another embodiment of the second and third conductive wiring layers exposed from the solder resist layer of FIG. 12, and after soldering another electronic component package structure on the surface of the second conductive wiring layer.

請參閱圖1-14,本發明實施例提供一種電子元件封裝結構100的製作方法,包括如下步驟:第一步,請參閱圖1,提供一承載板11,並在所述承載板11的相對兩側分別貼合一銅箔12。 Referring to FIG. 1-14, an embodiment of the present invention provides a method for fabricating an electronic component package structure 100, including the following steps: First, referring to FIG. 1, a carrier board 11 is provided, and the carrier board 11 is opposite. A copper foil 12 is attached to both sides.

所述承載板11呈平板狀。所述承載板11可以為樹脂板、陶瓷板、金屬板等硬性支撐材料。 The carrier plate 11 has a flat shape. The carrier plate 11 may be a rigid support material such as a resin plate, a ceramic plate, or a metal plate.

本實施例中,兩所述銅箔12分別通過一熱塑性膠體層13貼合於所述承載板11的相對兩側。其中,採用熱塑性膠體貼合銅箔的原因為便於在後續步驟中去除所述承載板11。 In this embodiment, the two copper foils 12 are respectively attached to opposite sides of the carrier plate 11 through a thermoplastic colloid layer 13 . Among them, the reason why the thermoplastic colloid is used to laminate the copper foil is to facilitate removal of the carrier sheet 11 in a subsequent step.

在其他實施例中,兩所述銅箔12也可以僅邊緣粘結於所述承載板11上,需要去除所述承載板11時裁切去除與承載板11粘結的部分,從而分離所述承載板11。 In other embodiments, the two copper foils 12 may also be edge-bonded only to the carrier plate 11, and the portion to be bonded to the carrier plate 11 may be cut and removed when the carrier plate 11 is removed, thereby separating the Carrying board 11.

第二步,請參閱圖2-3,在兩側的所述銅箔12表面形成第一導電線路層14。 In the second step, referring to FIG. 2-3, the first conductive circuit layer 14 is formed on the surface of the copper foil 12 on both sides.

所述第一導電線路層14包括多個電性接觸墊141及多個第一焊墊142。本實施方式中,通過選擇性電鍍的方式形成所述第一導電線路層14。具體地,首先,請參閱圖2,在兩側的所述銅箔12表面形成圖案化的第一光阻層15,使部分所述銅箔12從所述圖案化的第一光阻層15中暴露出來;之後,請參閱圖3,電鍍,從而在從所述圖案化的第一光阻層15中暴露出來所述銅箔12的表面,也即所述圖案化的第一光阻層15的間隙,形成第一導電線路層14。 The first conductive circuit layer 14 includes a plurality of electrical contact pads 141 and a plurality of first pads 142 . In the present embodiment, the first conductive wiring layer 14 is formed by selective plating. Specifically, first, referring to FIG. 2, a patterned first photoresist layer 15 is formed on the surface of the copper foil 12 on both sides, so that a portion of the copper foil 12 is removed from the patterned first photoresist layer 15 Exposed; thereafter, please refer to FIG. 3, electroplating, thereby exposing the surface of the copper foil 12 from the patterned first photoresist layer 15, that is, the patterned first photoresist layer The gap of 15 forms the first conductive wiring layer 14.

在其他實施例中,形成所述第一導電線路層14後還可以包括去除 所述圖案化的第一光阻層15的步驟。 In other embodiments, the forming of the first conductive circuit layer 14 may further include removing The step of patterning the first photoresist layer 15.

第三步,請參閱圖4-6,在兩側的部分所述第一導電線路層14表面形成導電柱16。 In the third step, referring to FIG. 4-6, conductive pillars 16 are formed on the surface of the first conductive circuit layer 14 on both sides.

本實施方式中,所述導電柱16大致為圓柱狀,所述導電柱16形成於所述多個電性接觸墊141表面且電連接所述多個電性接觸墊141,通過選擇性電鍍的方式形成所述導電柱16。具體地,首先,請參閱圖4,在部分所述第一導電線路層14表面以及所述第一光阻層15表面形成圖案化的第二光阻層17,所述圖案化的第二光阻層17覆蓋所述多個第一焊墊142;之後,請參閱5,電鍍,從而在從所述圖案化的第二光阻層17中暴露出來所述第一導電線路層14的表面,也即所述圖案化的第二光阻層17的間隙,形成導電柱16;然後,請參閱圖6,去除圖案化的所述第一光阻層15及第二光阻層17。 In this embodiment, the conductive pillars 16 are substantially cylindrical, and the conductive pillars 16 are formed on the surface of the plurality of electrical contact pads 141 and electrically connected to the plurality of electrical contact pads 141 through selective plating. The conductive pillars 16 are formed in a manner. Specifically, first, referring to FIG. 4, a patterned second photoresist layer 17 is formed on a surface of a portion of the first conductive circuit layer 14 and the surface of the first photoresist layer 15, the patterned second light. a resist layer 17 covering the plurality of first pads 142; thereafter, referring to 5, electroplating, thereby exposing the surface of the first conductive wiring layer 14 from the patterned second photoresist layer 17, That is, the gap of the patterned second photoresist layer 17 forms a conductive pillar 16; then, referring to FIG. 6, the patterned first photoresist layer 15 and the second photoresist layer 17 are removed.

第四步,請參閱圖7,提供第一電子元件18,將所述第一電子元件18電連接於多個所述第一焊墊142,形成一第一電路板中間體200。 In a fourth step, referring to FIG. 7, a first electronic component 18 is provided. The first electronic component 18 is electrically connected to the plurality of first pads 142 to form a first circuit board intermediate body 200.

本實施例中,將所述第一電子元件18通過錫膏19焊接於多個所述第一焊墊142表面。所述第一電子元件18的厚度小於所述導電柱16凸出於所述第一導電線路層14的高度,從而,使所述第一電子元件18遠離所述第一導電線路層14的表面低於所述導電柱16遠離所述第一導電線路層14的表面,或與所述導電柱16遠離所述第一導電線路層14的表面大致相齊平。 In this embodiment, the first electronic component 18 is soldered to the surface of the plurality of first pads 142 by solder paste 19. The thickness of the first electronic component 18 is smaller than the height of the conductive pillar 16 protruding from the first conductive wiring layer 14 , thereby moving the first electronic component 18 away from the surface of the first conductive wiring layer 14 . Lower than the surface of the conductive pillar 16 away from the first conductive wiring layer 14 or substantially flush with the surface of the conductive pillar 16 away from the first conductive wiring layer 14.

第五步,請參閱圖8,在所述第一導電線路層14及所述導電柱16 的間隙形成第一介電層20,使所述第一介電層20包覆所述第一電子元件18。 In the fifth step, referring to FIG. 8, the first conductive circuit layer 14 and the conductive pillar 16 are The gap forms a first dielectric layer 20 such that the first dielectric layer 20 encapsulates the first electronic component 18.

本實施例中,通過注塑成型的方式形成所述第一介電層20,所述導電柱16遠離所述第一導電線路層14的表面與所述第一介電層20的表面相齊平,從而所述導電柱16遠離所述第一導電線路層14的表面暴露於所述第一介電層20。具體地:首先,提供一模具(圖未示),所述模具包括一模穴及一注膠通道,將所述第一電路板中間體200收容於所述模穴內;然後,通過所述注膠通道向所述模穴內注射膠體,使膠體填充所述第一導電線路層14及所述導電柱16的間隙,並包覆所述第一電子元件18;接著,固化所述膠體從而形成所述第一介電層20;之後,將形成有第一介電層20的所述第一電路板中間體200從模穴中取出。 In this embodiment, the first dielectric layer 20 is formed by injection molding, and the surface of the conductive pillar 16 away from the first conductive wiring layer 14 is flush with the surface of the first dielectric layer 20. Thereby, the surface of the conductive pillar 16 away from the first conductive wiring layer 14 is exposed to the first dielectric layer 20. Specifically, firstly, a mold (not shown) is provided, the mold includes a cavity and a glue injection passage, and the first circuit board intermediate body 200 is received in the cavity; and then The glue injection channel injects a colloid into the cavity, so that the colloid fills the gap between the first conductive circuit layer 14 and the conductive pillar 16 and covers the first electronic component 18; then, the colloid is cured The first dielectric layer 20 is formed; thereafter, the first circuit board intermediate body 200 on which the first dielectric layer 20 is formed is taken out of the cavity.

本實施例中,所述第一電子元件18的熱膨脹係數(CTE)與所述第一介電層20的熱膨脹係數接近。所述第一介電層20的材質可以為常用的注塑成型材料。控制注射膠體的量使所述導電柱16遠離所述第一導電線路層14的表面與所述第一介電層20的表面相齊平。 In this embodiment, the coefficient of thermal expansion (CTE) of the first electronic component 18 is close to the coefficient of thermal expansion of the first dielectric layer 20. The material of the first dielectric layer 20 may be a commonly used injection molding material. The amount of the injected colloid is controlled such that the surface of the conductive pillar 16 away from the first conductive wiring layer 14 is flush with the surface of the first dielectric layer 20.

在其他實施例中,也可以注射燒過量的膠體以使膠體覆蓋所述導電柱16遠離所述第一導電線路層14的表面,成型之後再通過研磨的方式使所述導電柱16遠離所述第一導電線路層14的表面暴露於所述第一介電層20。 In other embodiments, an excess of colloid may also be injected to cause the colloid to cover the conductive pillar 16 away from the surface of the first conductive wiring layer 14, and then the conductive pillar 16 is moved away from the surface by molding. The surface of the first conductive wiring layer 14 is exposed to the first dielectric layer 20.

第六步,請參閱圖9,將所述承載板11及兩熱塑性膠體層13分離去除,從而得到兩個第二電路板中間體220。 In the sixth step, referring to FIG. 9, the carrier board 11 and the two thermoplastic colloid layers 13 are separated and removed, thereby obtaining two second circuit board intermediate bodies 220.

本實施例中,加熱使所述熱塑性膠體層13失去粘性,從而將所述承載板11及兩熱塑性膠體層13分離去除。 In this embodiment, heating causes the thermoplastic colloid layer 13 to lose its viscosity, thereby separating the carrier sheet 11 and the two thermoplastic colloid layers 13 apart.

第七步,請參閱圖10,去除每個所述第二電路板中間體220的銅箔12,從而得到芯層封裝基板240。 In the seventh step, referring to FIG. 10, the copper foil 12 of each of the second circuit board intermediate bodies 220 is removed, thereby obtaining a core package substrate 240.

本實施例中,通過快速蝕刻去除所述銅箔12,即控制蝕刻液的濃度及蝕刻的時間,使所述銅箔12被蝕刻去除,但所述第一導電線路層14並不被蝕刻去除。 In this embodiment, the copper foil 12 is removed by rapid etching, that is, the concentration of the etching liquid and the etching time are controlled, so that the copper foil 12 is etched away, but the first conductive wiring layer 14 is not removed by etching. .

所述芯層封裝基板240包括第一介電層20、嵌設於第一介電層20一側的第一導電線路層14、與所述第一導電線路層14電連接的導電柱16以及埋設於第一介電層20內部的第一電子元件18。所述第一導電線路層14包括多個電性接觸墊141及多個第一焊墊142。所述第一導電線路層14遠離所述導電柱16的表面與所述第一介電層20一側的表面相齊平。所述導電柱16形成於所述多個電性接觸墊141表面且電連接所述多個電性接觸墊141。所述導電柱16遠離所述第一導電線路層14的表面暴露於所述第一介電層20。所述第一電子元件18通過錫膏19焊接於多個所述第一焊墊142表面。 The core package substrate 240 includes a first dielectric layer 20 , a first conductive circuit layer 14 embedded on one side of the first dielectric layer 20 , and a conductive pillar 16 electrically connected to the first conductive circuit layer 14 . The first electronic component 18 is buried inside the first dielectric layer 20. The first conductive circuit layer 14 includes a plurality of electrical contact pads 141 and a plurality of first pads 142 . The surface of the first conductive circuit layer 14 away from the conductive pillar 16 is flush with the surface of the first dielectric layer 20 side. The conductive pillars 16 are formed on the surface of the plurality of electrical contact pads 141 and electrically connected to the plurality of electrical contact pads 141. The conductive pillar 16 is exposed to the first dielectric layer 20 away from the surface of the first conductive wiring layer 14. The first electronic component 18 is soldered to the surfaces of the plurality of first pads 142 by solder paste 19.

第八步,請參閱圖11,在所述芯層封裝基板240兩側增層,從而在所述芯層封裝基板240的第一電子元件18側依次形成第二介電層21及第二導電線路層22,以及在所述芯層封裝基板240的第一導電線路層14側依次形成第三介電層23及第三導電線路層24。 The eighth step, referring to FIG. 11 , is layered on both sides of the core package substrate 240 to form a second dielectric layer 21 and a second conductive layer on the first electronic component 18 side of the core package substrate 240. The circuit layer 22 and the third dielectric layer 23 and the third conductive wiring layer 24 are sequentially formed on the first conductive wiring layer 14 side of the core package substrate 240.

所述第二介電層21內還形成有第一導電盲孔25,所述第一導電盲孔25的截面大致為梯形,所述第一導電盲孔25電連接所述第二導電線路層22及導電柱16。所述第三介電層23內還形成有第二導電 盲孔26,所述第二導電盲孔26的截面大致為梯形,所述第二導電盲孔26電連接所述第三導電線路層24及第一導電線路層14。 A first conductive blind via 25 is formed in the second dielectric layer 21, the first conductive via 25 has a substantially trapezoidal cross section, and the first conductive via 25 is electrically connected to the second conductive trace layer. 22 and the conductive column 16. a second conductive layer is also formed in the third dielectric layer 23 The second conductive blind via 26 has a substantially trapezoidal cross section, and the second conductive via 26 is electrically connected to the third conductive trace layer 24 and the first conductive trace layer 14 .

本實施例中,首先,提供兩個半固化片,將所述兩個半固化片分別疊合在所述芯層封裝基板240兩側,壓合從而形成所述第二介電層21及所述第三介電層23;之後通過鐳射蝕孔分別在所述第二及第三介電層21、23上形成盲孔;然後在所述盲孔內分別電鍍形成所述第二及第二導電盲孔25、26,即將所述盲孔製作形成導電盲孔,以及在所述第二及第三介電層21、23表面分別通過半加成法或加成法形成所述第二及第三導電線路層22、24。所述兩個半固化片可以為含增韌材料的樹脂,如玻璃布基環氧樹脂。 In this embodiment, first, two prepregs are provided, and the two prepregs are respectively laminated on both sides of the core package substrate 240, and pressed to form the second dielectric layer 21 and the third dielectric layer. The second layer and the second conductive layer 25 are formed on the second and third dielectric layers 21 and 23 respectively; and then the second and second conductive vias 25 are respectively formed by plating in the blind holes. And 26, wherein the blind via is formed to form a conductive blind via, and the second and third conductive traces are formed on the surfaces of the second and third dielectric layers 21 and 23 by a semi-additive method or an additive method, respectively. Layers 22, 24. The two prepregs may be a toughening-containing resin such as a glass cloth-based epoxy resin.

在其他實施例中,所述第二及第二導電盲孔25、26也可以通過填充導電膏體形成。 In other embodiments, the second and second conductive vias 25, 26 may also be formed by filling a conductive paste.

第九步,請參閱圖12,在所述第二導電線路層22側形成第一防焊層27,及在所述第三導電線路層24側形成第二防焊層28,從而得到第一電子元件封裝結構260。 In a ninth step, referring to FIG. 12, a first solder resist layer 27 is formed on the second conductive wiring layer 22 side, and a second solder resist layer 28 is formed on the third conductive wiring layer 24 side, thereby obtaining the first Electronic component package structure 260.

所述第一防焊層27內形成有多個第一防焊層開口271,部分所述第二導電線路層22從所述多個第一防焊層開口271中暴露出來,形成第二焊墊221;所述第二防焊層28內形成有多個第二防焊層開口281,部分所述第三導電線路層24從所述多個第二防焊層開口281中暴露出來,形成第三焊墊241。 A plurality of first solder mask openings 271 are formed in the first solder resist layer 27, and a portion of the second conductive trace layer 22 is exposed from the plurality of first solder mask openings 271 to form a second solder. a second solder resist layer opening 281 is formed in the second solder resist layer 28, and a portion of the third conductive trace layer 24 is exposed from the plurality of second solder mask openings 281 to form The third pad 241.

優選地,所述第一介電層20的熱膨脹係數介於所述第一電子元件18與第一防焊層27的熱膨脹係數之間,以降低因材料熱膨脹係數差異較大引起的板彎翹、斷裂等不良。 Preferably, the thermal expansion coefficient of the first dielectric layer 20 is between the thermal expansion coefficients of the first electronic component 18 and the first solder resist layer 27 to reduce the bending of the plate caused by the difference in thermal expansion coefficient of the material. Bad, etc.

第十步,請一併參閱圖13,在所述第二焊墊221表面形成第一錫球29,將一第二電子元件30焊接於所述第二焊墊221上,在所述第三焊墊241表面形成第二焊球31,從而形成第二電子元件封裝結構280。 In the tenth step, referring to FIG. 13, a first solder ball 29 is formed on the surface of the second pad 221, and a second electronic component 30 is soldered to the second pad 221, in the third A second solder ball 31 is formed on the surface of the pad 241 to form a second electronic component package structure 280.

本實施例中,在部分所述第二焊墊221表面形成所述第一錫球29,焊接所述第二電子元件30的第二焊墊221的排布密度較未焊接所述第二電子元件的所述第二焊墊221的排布密度大。所述第二錫球31可以用於電連接電子元件、類似本案的電子元件封裝結構或不含電子元件的電路板等。 In this embodiment, the first solder ball 29 is formed on a portion of the surface of the second solder pad 221, and the second solder pad 221 soldering the second electronic component 30 is arranged to have a lower density than the second solder. The second pad 221 of the component has a high density of arrangement. The second solder ball 31 can be used for electrically connecting an electronic component, an electronic component package structure similar to the present invention, or a circuit board containing no electronic component, or the like.

所述第二電子元件封裝結構280包括第一介電層20、嵌設於第一介電層20一側的第一導電線路層14、嵌設於第一介電層20另一側且與所述第一導電線路層14電連接的導電柱16、埋設於第一介電層20內部的第一電子元件18、形成與所述第一介電層20遠離所述第一導電線路層14側的第二介電層21、形成於第二介電層21的遠離第一介電層20的表面的第二導電線路層22以及貫穿第二介電層21並電連接所述導電柱16與第二導電線路層22的第一導電盲孔。所述第一導電線路層14包括多個電性接觸墊141及多個第一焊墊142。所述第一導電線路層14遠離所述導電柱16的表面與所述第一介電層20一側的表面相齊平。所述導電柱16形成於所述多個電性接觸墊141表面且電連接所述多個電性接觸墊141。所述導電柱16遠離所述第一導電線路層14的表面暴露於所述第一介電層20。所述第一電子元件18通過錫膏19焊接於多個所述第一焊墊142表面。 The second electronic component package structure 280 includes a first dielectric layer 20, a first conductive circuit layer 14 embedded on one side of the first dielectric layer 20, and is embedded on the other side of the first dielectric layer 20 and The conductive pillars 16 electrically connected to the first conductive circuit layer 14 , the first electronic component 18 embedded in the first dielectric layer 20 , and the first dielectric layer 20 are separated from the first conductive trace layer 14 . a second dielectric layer 21 on the side, a second conductive circuit layer 22 formed on the surface of the second dielectric layer 21 away from the first dielectric layer 20, and a second dielectric layer 21 and electrically connected to the conductive pillars 16 A first conductive blind via with the second conductive trace layer 22. The first conductive circuit layer 14 includes a plurality of electrical contact pads 141 and a plurality of first pads 142 . The surface of the first conductive circuit layer 14 away from the conductive pillar 16 is flush with the surface of the first dielectric layer 20 side. The conductive pillars 16 are formed on the surface of the plurality of electrical contact pads 141 and electrically connected to the plurality of electrical contact pads 141. The conductive pillar 16 is exposed to the first dielectric layer 20 away from the surface of the first conductive wiring layer 14. The first electronic component 18 is soldered to the surfaces of the plurality of first pads 142 by solder paste 19.

所述第二電子元件封裝結構280還包括依次形成於所述第一導電 線路層14側依次形成第三介電層23及第三導電線路層24,所述第三介電層23內還形成有第二導電盲孔26,所述第二導電盲孔26電連接所述第三導電線路層24及第一導電線路層14。 The second electronic component package structure 280 further includes sequentially formed on the first conductive A third dielectric layer 23 and a third conductive circuit layer 24 are sequentially formed on the side of the circuit layer 14 , and a second conductive blind via 26 is formed in the third dielectric layer 23 , and the second conductive blind via 26 is electrically connected The third conductive circuit layer 24 and the first conductive circuit layer 14 are described.

所述第二電子元件封裝結構280還包括形成於所述第二導電線路層22側的第一防焊層27,及形成於所述第三導電線路層24側的第二防焊層28。所述第一防焊層27內形成有多個第一防焊層開口271,部分所述第二導電線路層22從所述多個第一防焊層開口271中暴露出來,形成第二焊墊221;所述第二防焊層28內形成有多個第二防焊層開口281,部分所述第三導電線路層24從所述多個第二防焊層開口281中暴露出來,形成第三焊墊241。部分所述第二焊墊221表面形成有第一錫球29,一第二電子元件30焊接於所述第二焊墊221上。所述第三焊墊241表面形成有第二焊球31。 The second electronic component package structure 280 further includes a first solder resist layer 27 formed on the second conductive wiring layer 22 side, and a second solder resist layer 28 formed on the third conductive wiring layer 24 side. A plurality of first solder mask openings 271 are formed in the first solder resist layer 27, and a portion of the second conductive trace layer 22 is exposed from the plurality of first solder mask openings 271 to form a second solder. a second solder resist layer opening 281 is formed in the second solder resist layer 28, and a portion of the third conductive trace layer 24 is exposed from the plurality of second solder mask openings 281 to form The third pad 241. A portion of the second pad 221 is formed with a first solder ball 29 on the surface thereof, and a second electronic component 30 is soldered to the second pad 221 . A second solder ball 31 is formed on the surface of the third pad 241.

在其他實施例中,焊接所述第二電子元件30後還在第二電子元件30側面及底部注入封裝膠體,以固定所述第二電子元件30。 In other embodiments, after the second electronic component 30 is soldered, an encapsulant is also implanted on the sides and bottom of the second electronic component 30 to fix the second electronic component 30.

在另一實施例中,請參閱圖14,在所述多個第二焊墊221’表面形成多個第一錫球29’,將另一電子元件封裝結構32焊接於所述多個第二焊墊221’上,並在所述第三焊墊241’表面形成第二焊球31’,從而形成第三電子元件封裝結構300。所述第二錫球31’可以用於電連接電子元件、類似本案的電子元件封裝結構或不含電子元件的電路板等。焊接所述另一電子元件封裝結構32後還可以在另一電子元件封裝結構32側面及底部注入封裝膠體,以固定所述另一電子元件封裝結構32。 In another embodiment, referring to FIG. 14, a plurality of first solder balls 29' are formed on the surface of the plurality of second pads 221', and another electronic component package structure 32 is soldered to the plurality of second A second solder ball 31' is formed on the pad 221' and a surface of the third pad 241' is formed, thereby forming a third electronic component package structure 300. The second solder ball 31' may be used for electrically connecting an electronic component, an electronic component package structure similar to the present invention, or a circuit board containing no electronic component, or the like. After the other electronic component package structure 32 is soldered, an encapsulant may be injected on the side and bottom of the other electronic component package structure 32 to fix the other electronic component package structure 32.

本案的電子元件封裝結構均可包括更多的導電線路層及介電層,增層方式可以參考上述第八步的方法。 The electronic component package structure of the present invention may include more conductive circuit layers and dielectric layers, and the method of layering may refer to the method of the above eighth step.

先前技術需要通過底部填充膠包覆電子元件以填充電子元件與基板之間的縫隙,且常常填充不完全;相較於先前技術,本發明實施例的電子元件封裝結構及製作方法通過注塑成型形成所述第一介電層20,可以使第一介電層20完全包覆所述第一電子元件18而不形成空隙,還可以不使用底部填充膠,從而簡化製作流程;並且,本案使第一電子元件18的熱膨脹係數與第一介電層20的熱膨脹係數接近,從而降低因材料熱膨脹係數差異較大引起的板彎翹、斷裂等不良;進一步,本案的第一電子元件18形成於電子元件封裝結構內部,從而可以降低電子元件封裝結構的總厚度,有利於電子元件封裝結構的輕薄化;另外,本案通過第二光阻層17形成所述導電柱16,所述導電柱16直接電鍍形成於第一導電線路層14表面,從而與第一導電線路層14電性接觸較穩定。 The prior art needs to cover the electronic component with the underfill to fill the gap between the electronic component and the substrate, and often the filling is incomplete; compared to the prior art, the electronic component packaging structure and the manufacturing method of the embodiment of the present invention are formed by injection molding. The first dielectric layer 20 can make the first dielectric layer 20 completely cover the first electronic component 18 without forming a void, and can also not use an underfill, thereby simplifying the manufacturing process; The thermal expansion coefficient of an electronic component 18 is close to the thermal expansion coefficient of the first dielectric layer 20, thereby reducing defects such as bending, cracking, etc. caused by a large difference in thermal expansion coefficient of the material; further, the first electronic component 18 of the present invention is formed in the electron The inside of the component package structure can reduce the total thickness of the electronic component package structure, which is beneficial to the thinning of the electronic component package structure. In addition, the conductive pillar 16 is formed by the second photoresist layer 17 in the present case, and the conductive pillar 16 is directly plated. Formed on the surface of the first conductive circuit layer 14, so that electrical contact with the first conductive circuit layer 14 is relatively stable.

惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之請求項。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下請求項內。 However, the above description is only a preferred embodiment of the present invention, and the claim of the present invention cannot be limited thereby. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included in the following claims.

14‧‧‧第一導電線路層 14‧‧‧First conductive circuit layer

16‧‧‧導電柱 16‧‧‧conductive column

18‧‧‧第一電子元件 18‧‧‧First electronic components

19‧‧‧錫膏 19‧‧‧ solder paste

20‧‧‧第一介電層 20‧‧‧First dielectric layer

21‧‧‧第二介電層 21‧‧‧Second dielectric layer

22‧‧‧第二導電線路層 22‧‧‧Second conductive circuit layer

23‧‧‧第三介電層 23‧‧‧ Third dielectric layer

24‧‧‧第三導電線路層 24‧‧‧ Third conductive circuit layer

25‧‧‧第一導電盲孔 25‧‧‧First conductive blind hole

26‧‧‧第二導電盲孔 26‧‧‧Second conductive blind hole

27‧‧‧第一防焊層 27‧‧‧First solder mask

271‧‧‧第一防焊層開口 271‧‧‧First solder mask opening

28‧‧‧第二防焊層 28‧‧‧Second solder mask

221‧‧‧第二焊墊 221‧‧‧Second pad

241‧‧‧第三焊墊 241‧‧‧ Third pad

29‧‧‧第一錫球 29‧‧‧First Tin Ball

30‧‧‧第二電子元件 30‧‧‧Second electronic components

31‧‧‧第二錫球 31‧‧‧ Second Tin Ball

280‧‧‧第二電子元件封裝結構 280‧‧‧Second electronic component package structure

Claims (11)

一種電子元件封裝結構的製作方法,包括步驟:提供銅箔,在所述銅箔表面形成第一導電線路層,所述第一導電線路層包括多個電性接觸墊及多個第一焊墊;在所述多個電性接觸墊表面形成多個導電柱,所述多個導電柱與所述多個電性接觸墊相電連接;在所述多個第一焊墊表面焊接第一電子元件;在所述第一導電線路層及所述導電柱的間隙形成第一介電層,並使所述第一介電層包覆所述第一電子元件;去除所述銅箔,得到芯層封裝基板;在所述芯層封裝基板的第一電子元件側依次形成第二介電層及第二導電線路層,所述第二介電層內形成有第一導電盲孔,所述第一導電盲孔電連接所述第二導電線路層及導電柱;以及在所述第二導電線路層側形成第一防焊層,其中,所述第一介電層的熱膨脹係數介於所述第一電子元件的熱膨脹係數與第一防焊層的熱膨脹係數之間,從而形成所述電子元件封裝結構。 A method for fabricating an electronic component package structure, comprising the steps of: providing a copper foil, forming a first conductive circuit layer on a surface of the copper foil, the first conductive circuit layer comprising a plurality of electrical contact pads and a plurality of first pads Forming a plurality of conductive pillars on the surface of the plurality of electrical contact pads, the plurality of conductive pillars being electrically connected to the plurality of electrical contact pads; soldering the first electrons on the surfaces of the plurality of first solder pads a first dielectric layer is formed in a gap between the first conductive circuit layer and the conductive pillar, and the first dielectric layer is coated on the first electronic component; the copper foil is removed to obtain a core Forming a substrate; forming a second dielectric layer and a second conductive circuit layer on the first electronic component side of the core package substrate, and forming a first conductive blind via in the second dielectric layer, a conductive via hole electrically connecting the second conductive circuit layer and the conductive pillar; and forming a first solder resist layer on the second conductive trace layer side, wherein a thermal expansion coefficient of the first dielectric layer is between Thermal expansion coefficient of the first electronic component and heat of the first solder resist layer Between the expansion coefficient, to thereby form the electronic device package structure. 如申請專利範圍第1項所述的電子元件封裝結構的製作方法,其中,所述銅箔支撐於一承載板上,去除所述銅箔前先去除所述承載板。 The method for fabricating an electronic component package structure according to claim 1, wherein the copper foil is supported on a carrier plate, and the carrier plate is removed before the copper foil is removed. 如申請專利範圍第2項所述的電子元件封裝結構的製作方法,其中,所述銅箔通過一熱塑性膠體層貼合於所述承載板的表面;去除所述承載板的步驟中,通過加熱使所述熱塑性膠體層失去粘性,使所述承載板與所述銅箔分離,從而去除所述承載板。 The method for fabricating an electronic component package structure according to claim 2, wherein the copper foil is attached to the surface of the carrier plate through a thermoplastic colloid layer; in the step of removing the carrier plate, by heating The thermoplastic colloid layer is rendered viscous, and the carrier sheet is separated from the copper foil to remove the carrier sheet. 如申請專利範圍第1項所述的電子元件封裝結構的製作方法,其中,所述 第一導電線路層的形成方法包括:在所述銅箔表面形成圖案化的第一光阻層,使部分所述銅箔從所述圖案化的第一光阻層中暴露出來;之後,電鍍,從而從所述圖案化的第一光阻層中暴露出來所述銅箔的表面形成第一導電線路層。 The method of fabricating an electronic component package structure according to claim 1, wherein the The method for forming a first conductive circuit layer includes: forming a patterned first photoresist layer on a surface of the copper foil, exposing a portion of the copper foil from the patterned first photoresist layer; and thereafter, plating Thereby, the surface of the copper foil exposed from the patterned first photoresist layer forms a first conductive wiring layer. 如申請專利範圍第4項所述的電子元件封裝結構的製作方法,其中,形成所述導電柱的方法包括:在部分所述第一導電線路層表面及第一光阻層表面形成圖案化的第二光阻層,所述圖案化的第二光阻層覆蓋所述多個第一焊墊;之後,電鍍,從而在從所述圖案化的第二光阻層中暴露出來所述第一導電線路層的表面形成導電柱;然後,去除圖案化的所述第一光阻層及第二光阻層。 The method for fabricating an electronic component package structure according to claim 4, wherein the method of forming the conductive pillar comprises: patterning a portion of the surface of the first conductive wiring layer and the surface of the first photoresist layer a second photoresist layer, the patterned second photoresist layer covers the plurality of first pads; thereafter, electroplating to expose the first layer from the patterned second photoresist layer The surface of the conductive circuit layer forms a conductive pillar; then, the patterned first photoresist layer and the second photoresist layer are removed. 如申請專利範圍第1項所述的電子元件封裝結構的製作方法,其中,所述第一電子元件的厚度小於所述導電柱凸出於所述第一導電線路層的高度,從而,所述第一電子元件遠離所述第一導電線路層的表面低於所述導電柱遠離所述第一導電線路層的表面,或與所述導電柱遠離所述第一導電線路層的表面大致相齊平。 The manufacturing method of the electronic component package structure of claim 1, wherein the thickness of the first electronic component is smaller than a height of the conductive pillar protruding from the first conductive circuit layer, thereby a surface of the first electronic component away from the first conductive wiring layer is lower than a surface of the conductive pillar away from the first conductive wiring layer, or substantially flush with a surface of the conductive pillar away from the first conductive wiring layer level. 如申請專利範圍第1項所述的電子元件封裝結構的製作方法,其中,以注塑成型的方式形成所述第二介電層;所述導電柱遠離所述第一導電線路層的表面與所述第一介電層的表面相齊平,從而所述導電柱遠離所述第一導電線路層的表面暴露於所述第一介電層。 The method for fabricating an electronic component package structure according to claim 1, wherein the second dielectric layer is formed by injection molding; the conductive pillar is away from a surface and a surface of the first conductive wiring layer. The surface of the first dielectric layer is flush, such that the conductive pillars are exposed to the first dielectric layer away from the surface of the first conductive wiring layer. 如申請專利範圍第1項所述的電子元件封裝結構的製作方法,其中,形成第二介電層及第二導電線路層之後以及形成第一防焊層之前,還包括步驟:在所述芯層封裝基板的第一導電線路層側依次形成第三介電層及第三導電線路層,所述第三介電層內還形成有第二導電盲孔,所述第二導電盲孔電連接所述第三導電線路層及所述第一導電線路層。 The method for fabricating an electronic component package structure according to claim 1, wherein after forming the second dielectric layer and the second conductive wiring layer and before forming the first solder resist layer, the method further comprises the step of: a third dielectric layer and a third conductive circuit layer are sequentially formed on the first conductive circuit layer side of the layer package substrate, and a second conductive blind hole is formed in the third dielectric layer, and the second conductive blind via is electrically connected The third conductive circuit layer and the first conductive circuit layer. 如申請專利範圍第8項所述的電子元件封裝結構的製作方法,其中,形成 所述第一防焊層的同時還在所述第三導電線路層側形成第二防焊層;所述第一防焊層內形成有多個第一防焊層開口,部分所述第二導電線路層從所述多個第一防焊層開口中暴露出來,形成第二焊墊;所述第二防焊層內形成有多個第二防焊層開口,部分所述第三導電線路層從所述多個第二防焊層開口中暴露出來,形成第三焊墊。 The method for fabricating an electronic component package structure according to claim 8, wherein the forming method Forming a second solder resist layer on the side of the third conductive circuit layer simultaneously with the first solder resist layer; forming a plurality of first solder resist layer openings in the first solder resist layer, and partially forming the second a conductive circuit layer is exposed from the plurality of first solder mask openings to form a second solder pad; a plurality of second solder mask openings are formed in the second solder resist layer, and the third conductive trace is formed A layer is exposed from the plurality of second solder mask openings to form a third pad. 如申請專利範圍第9項所述的電子元件封裝結構的製作方法,其中,在部分所述第二焊墊表面形成第一錫球,將一第二電子元件焊接於所述第二焊墊上,在所述第三焊墊表面形成第二焊球。 The method of fabricating an electronic component package structure according to claim 9, wherein a first solder ball is formed on a portion of the surface of the second pad, and a second electronic component is soldered to the second pad. A second solder ball is formed on the surface of the third pad. 如申請專利範圍第9項所述的電子元件封裝結構的製作方法,其中,在所述多個第二焊墊表面形成第一錫球,將另一電子元件封裝結構焊接於所述第二焊墊上,在所述第三焊墊表面形成第二焊球。 The method of fabricating an electronic component package structure according to claim 9, wherein a first solder ball is formed on the surface of the plurality of second pads, and another electronic component package structure is soldered to the second solder On the pad, a second solder ball is formed on the surface of the third pad.
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