KR101638124B1 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Semiconductor light emitting device and method of manufacturing the same Download PDF

Info

Publication number
KR101638124B1
KR101638124B1 KR1020140144087A KR20140144087A KR101638124B1 KR 101638124 B1 KR101638124 B1 KR 101638124B1 KR 1020140144087 A KR1020140144087 A KR 1020140144087A KR 20140144087 A KR20140144087 A KR 20140144087A KR 101638124 B1 KR101638124 B1 KR 101638124B1
Authority
KR
South Korea
Prior art keywords
light emitting
semiconductor light
encapsulant
semiconductor
dam
Prior art date
Application number
KR1020140144087A
Other languages
Korean (ko)
Other versions
KR20160048258A (en
Inventor
백승호
전수근
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to KR1020140144087A priority Critical patent/KR101638124B1/en
Priority to PCT/KR2015/009619 priority patent/WO2016039593A1/en
Priority to CN201580048716.1A priority patent/CN106688115B/en
Priority to US15/510,585 priority patent/US10411176B2/en
Publication of KR20160048258A publication Critical patent/KR20160048258A/en
Application granted granted Critical
Publication of KR101638124B1 publication Critical patent/KR101638124B1/en
Priority to US16/519,546 priority patent/US10930832B2/en
Priority to US16/519,467 priority patent/US10763415B2/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms

Abstract

The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: providing a first dam having an opening formed on a first base; A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer having a first conductivity type, A plurality of semiconductor layers interposed between the first and second semiconductor layers and having an active layer which generates light by recombination of electrons and holes, at least one electrode for supplying current to the plurality of semiconductor layers, and a plurality Placing a semiconductor light emitting portion on a first base such that the first encapsulation material faces the first base and the at least one electrode faces upward; Forming a second encapsulant between the first dam and the semiconductor light emitting portion; And forming at least one conductive portion to cover at least one of the exposed upper electrode and a portion of the second encapsulant.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

The present disclosure relates generally to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device having a chip scale and a manufacturing method thereof.

As the semiconductor light emitting element, a Group III nitride semiconductor light emitting element is exemplified. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

BACKGROUND ART Semiconductor light emitting devices are manufactured through an EPI process, a chip forming process, and a package process. In each manufacturing process, defective products are generated due to various unexpected causes. If defects generated in each manufacturing process can not be appropriately removed, defective products are unnecessarily subjected to a subsequent process, and production efficiency is lowered.

FIG. 1 is a view for explaining an example of a process of producing a semiconductor light emitting chip from a wafer, in which a raw wafer is produced by using a raw material such as silicon or sapphire and a plurality of The semiconductor layer is grown. Thereafter, an epitaxial wafer 1 having a semiconductor light emitting chip formed thereon is formed by an electrode forming process, an etching process, a protective film forming process and the like (see FIG. 1A). Thereafter, as shown in FIGS. 1B and 1C, Is attached to the dicing tape 3 and separated into individual semiconductor light emitting chips 101 by a scribing process as shown in Fig. 1D. Subsequently, inspection and grading are carried out and the fixation layer 13 (for example, tape) is applied as required in a post process such as a packaging process, using a sorter 5 as shown in Fig. 1E, The semiconductor light emitting chip 101 may be exposed and then subjected to a visual inspection.

FIG. 2 is a view for explaining an example of a process of manufacturing a semiconductor light emitting device package using a semiconductor light emitting chip. In the package process, for example, a die bonder 501, The semiconductor light emitting chip 101 is die-bonded to the lead frame 4 and a semiconductor light emitting device package is produced as shown in FIG. 2B through wire bonding, fluorescent material encapsulation, characteristic testing, trimming, taping and the like. Alternatively, the semiconductor light emitting device package may be manufactured by mounting the semiconductor light emitting chip 101 on a submount on which external electrodes such as a PCB are formed by an SMD method. The process of attaching the semiconductor light emitting chip 101 on a lead frame (e.g., 4), a PCB, or a circuit tape is referred to as die bonding, and the equipment to be used is referred to as a die bonder (e.g., 501). Since the size of the semiconductor light emitting chip 101 is becoming smaller and smaller, the accuracy of the bonding position and the angle of the semiconductor light emitting chip 101 is more demanded.

FIG. 3 is a view for explaining an example of a semiconductor light emitting chip arranged on a tape by a projector. As illustrated in FIG. 1F, the semiconductor light emitting chip 101 has a structure Are provided. The shooter 5 arranges the semiconductor light emitting chips 101 in rows and columns indicated at some intervals based on the semiconductor light emitting chips 101 initially arranged on the flat tape 13. [ A case 15 in which the angle of the semiconductor light emitting chip 101 is slightly different may occur in the course of the arrangement and as the subject 5 performs a high speed operation, The place 14 may also occur. Otherwise, the semiconductor light emitting chip 16, which is defective as a result of the inspection, is pulled out and an empty space is generated. If the operation of the shooter 5 is slowed down to reduce such a problem, the process time increases.

If the accuracy of row and column arrangement by the shooter 5 is insufficient, the quality of the product may be greatly affected by the post-processing method. For example, in the case where the semiconductor light emitting chip 101 is bonded to the lead frame 4 with the die bonder 501, the die bonder 501 has a shape of the electrode of the semiconductor light emitting chip 101 bonded to the tape 13 And recognizes the shape of the lead frame 4, and can correct the positions, angles, and the like to be bonded. Therefore, the arrangement of the semiconductor light emitting chips 101 by the shooter 5 does not significantly affect the packaging process unless it is badly bad. However, in the case where the semiconductor light emitting chip 101 arranged on the tape 13 as a post-process is directly used in the process, or is rearranged to a required specification by using the projector 5, There is a problem that the process efficiency is lowered because the semiconductor light emitting device 101 needs to be corrected again and a process of filling the void 14 of the semiconductor light emitting chip 101 must be additionally performed.

4 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044. The semiconductor light emitting device includes a substrate 1200, an LED, and an encapsulant 1000. The LED is formed in the form of a flip chip on a growth substrate 100, a growth substrate 100, a first semiconductor layer 300 having a first conductivity, an active layer 300 for generating light through recombination of electrons and holes, A first semiconductor layer 400 having a first conductivity and a second semiconductor layer 500 having a second conductivity different from the first conductivity. A metal reflection film 950 is formed on the second semiconductor layer 500 to reflect light toward the growth substrate 100 and an electrode 800 is formed on the first semiconductor layer 300 exposed and etched. The encapsulant 1000 contains a phosphor and is formed so as to surround the growth substrate 100 and the semiconductor layers 300, 400 and 500. The LEDs are bonded to the substrate 1200 having the electrical contacts 820 and 960 by conductive adhesives 830 and 970.

FIG. 5 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044. First, a plurality of LEDs 2A-2F are arranged on a substrate 1200. The substrate 1200 is made of silicon, and the growth substrate 100 (see FIG. 4) of each LED is made of sapphire or silicon carbide. The substrate 1200 is provided with electrical contacts 820 and 960 (see FIG. 4), and each LED is bonded to the electrical contacts 820 and 960. After the stencil 6 having openings 8A-8F corresponding to the respective LEDs is formed on the substrate 1200, a sealing material 1000 (see FIG. 4) is formed to expose a part of the electrical contacts 820 and 960 do. After the stencil 6 is removed and the curing process is performed, the substrate 1200 is sawed or scribed and separated into individual semiconductor light emitting devices.

6 is a view for explaining a problem when the sealing material is formed on a plurality of semiconductor light emitting chips at one time, in which a guide 21 is arranged at the edge of the tape 13 and the substrate, The semiconductor light emitting chip 101 can be covered and the sealing material 17 can be flattened by pushing. As described above, on the tape 13, there may be a space 14 where the semiconductor light emitting chip 101 is empty. In this case, the encapsulant 17 may slightly hang down from the space 14 where the semiconductor light emitting chip 101 is located. In this case, the encapsulant 17 around the semiconductor light emitting chip 101 It has a bad influence. As a result, there arises a problem that the color coordinate and the optical characteristic of the semiconductor light emitting element (the combination of the sealing material 17 and the semiconductor light emitting chip 101) affected are different from the designed values.

On the other hand, due to such a problem, a process of repositioning the semiconductor light emitting chip 101 in the empty space 14 on the tape 13 is added, which increases the number of processes and reduces the process efficiency. On the other hand, a process of forming the sealing material 17 without removing the defective semiconductor light emitting chip 16 may be performed in order to avoid the influence on the state of the sealing material 17. However, in this case, the defective semiconductor light emitting element must be removed by the appearance inspection, so that the process water is further added, and the material is wasted.

On the other hand, after the sealing material 17 is formed, the sealing material 17 can be cut with the cutter 31 and separated into individual semiconductor light emitting devices. In this case, there is a problem that the light extraction efficiency is lowered as the cut surface of the sealing material 17 by the cutter 31 is cut by the cutter 31. [ Further, if the arrangement of the semiconductor light emitting chips 101 on the tape 13 is slightly distorted, there is a problem that defects occur in many semiconductor light emitting devices at the time of cutting by the cutter 31. [

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a method of fabricating a semiconductor light emitting device, comprising: providing a first encapsulant on a base exposed through a dam and an opening formed in the base; And placing a semiconductor light emitting chip on a first encapsulant, the method comprising: forming a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A semiconductor light emitting chip including a plurality of semiconductor layers interposed between the plurality of semiconductor layers and having an active layer that generates light by recombination of electrons and holes and at least one electrode for supplying current to the plurality of semiconductor layers, And placing the semiconductor light emitting chip on the first encapsulant so that the plurality of semiconductor layers on the opposite side of the at least one electrode are in contact with the first encapsulant. / RTI >

According to another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light by recombination of electrons and holes; At least one electrode formed on one side of the plurality of semiconductor layers to supply current to the plurality of semiconductor layers; And a plurality of semiconductor layers formed on opposite sides of at least one of the plurality of semiconductor layers so as to expose a part of the side surfaces of the plurality of semiconductor layers between the at least one electrode side and the opposite side of the at least one electrode, And an encapsulant (1).

According to still another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: providing a first dam having an opening formed on a first base; A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer having a first conductivity type, A plurality of semiconductor layers interposed between the first and second semiconductor layers and having an active layer which generates light by recombination of electrons and holes, at least one electrode for supplying current to the plurality of semiconductor layers, and a plurality Placing a semiconductor light emitting portion on a first base such that the first encapsulation material faces the first base and the at least one electrode faces upward; Forming a second encapsulant between the first dam and the semiconductor light emitting portion; And forming at least one conductive portion to cover at least one of the exposed upper electrode and a portion of the second encapsulant.

According to yet another aspect of the present disclosure, there is provided a semiconductor light emitting device comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a first conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light by recombination of electrons and holes; At least one electrode formed on one side of the plurality of semiconductor layers to supply current to the plurality of semiconductor layers; A first encapsulant surrounding the plurality of semiconductor layers to expose at least one electrode; A second encapsulant wrapping the first encapsulant such that at least one electrode is exposed and the first encapsulant is exposed to the opposite side of the at least one electrode; And at least one conductive part formed on at least one electrode and a part of the second encapsulant exposed to at least one electrode side.

This will be described later in the Specification for Implementation of the Invention.

1 is a view for explaining an example of a process of producing a semiconductor light emitting chip from a wafer,
2 is a view for explaining an example of a process of manufacturing a semiconductor light emitting device package using a semiconductor light emitting chip,
3 is a view for explaining an example of a semiconductor light emitting chip arranged on a tape by a sorter,
4 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
5 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
6 is a view for explaining a problem when a sealing material is formed all over a plurality of semiconductor light emitting chips,
7 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
8 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure,
9 is a view for explaining an example of a process of placing a semiconductor light emitting chip on a first encapsulant formed in an opening,
10 is a view for explaining an example of correcting the angle and position by recognizing the shape or pattern of the mask,
11 is a view for explaining an example of a dam provided on a base in the method of manufacturing a semiconductor light emitting device according to the present disclosure,
12 is a view for explaining an example of a method of providing a dam and a first encapsulant 180 on a base,
13 is a view for explaining another example of a manufacturing method of a semiconductor light emitting device according to the present disclosure,
14 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure,
15 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
16 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same,
17 is a view for explaining an example of a process of forming the conductive parts described in FIG. 16,
18 is a view for explaining another example of a method for manufacturing a semiconductor light emitting device according to the present disclosure,
19 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
20 and 21 are views showing an example of a method of inspecting a semiconductor light emitting device according to the present disclosure,
22 is a view for explaining examples of a method of separating a semiconductor light emitting element from a base and a dam,
23 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
24 is a view for explaining still another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same,
25 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same.

The present disclosure will now be described in detail with reference to the accompanying drawings.

7 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. First, a dam 301 having an opening 305 formed on a base 201 and a base 301 The first encapsulant 180 is provided on the second encapsulant 201. Next, the semiconductor light emitting chip 101 is placed on the first encapsulant 180. The semiconductor light emitting chip 101 includes a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, a first semiconductor layer 30, A plurality of semiconductor layers 30, 40, and 50 having an active layer 40 interposed between the layers 50 and generating light by recombination of electrons and holes, and a plurality of semiconductor layers 30, And at least one electrode 80, 70 for supplying a current to the electrode (see Fig. 8). And a plurality of semiconductor layers (30, 40, 50) on the opposite side of the at least one electrode (80, 70) are in contact with the first encapsulant (180) The chip 101 is placed on the first encapsulant 180.

In this example, the semiconductor light emitting chip 101 is a flip chip, and at least one of the electrodes 80 and 70 is provided on one side of the plurality of semiconductor layers 30, And a second electrode 70 electrically connected to the second semiconductor layer 50. The first electrode 80 is electrically connected to the second electrode layer 50, The first electrode 80 is formed on the opposite side of the first encapsulant 180 with respect to the plurality of semiconductor layers 30, 40, and 50 in the process of placing the semiconductor light emitting chip 101 on the first encapsulant 180. [ And a plurality of semiconductor layers 30, 40, 50 on the opposite sides of the first electrode 80 and the second electrode 70 are exposed to the first encapsulant 180 Lt; / RTI > The first encapsulant 180 may contain a fluorescent material and the process of soft curing the first encapsulant 180 before placing the semiconductor light emitting chip 101 on the first encapsulant 180 Can be added.

For example, after the mask or dam 301 is provided on the base 201 as shown in Fig. 7A, the first encapsulant 180 is applied to the opening 305 of the dam 301, as shown in Fig. 7B, . Here, the base 201 and the dam 301 can be separated or combined as separate members, but, alternatively, the base 201 and the dam 301 can be the bottom and the wall of a single frame. The first encapsulant 180 is first formed on the base 201 and the dam 301 is placed on the first encapsulant 180 so that the opening 301 of the dam 301 is filled with the first encapsulant 180, An embodiment in which the sealing material 180 is inserted is also possible. 7, a plurality of openings 305 are formed in the dam 301, but it is of course possible to use a dam 301 having one opening 305, unlike the present example. In this example, a flip chip is suitable for the semiconductor light emitting chip 101, but it does not exclude a lateral chip or a vertical chip.

As an example of the method of forming the first encapsulant 180 on the base 201 exposed by the opening 305, the first encapsulant 180 may be supplied to each opening 305 by a method such as dispensing or printing do. The first encapsulant 180 may contain a phosphor. The height or thickness of the first encapsulant 180 can be adjusted as needed. In this example, the first encapsulant 180 is formed at a lower height than the opening 305.

At least a portion of the plurality of semiconductor layers 30, 40, 50 may be buried in the first encapsulant 180 during the placement of the semiconductor light emitting chip 101 in the first encapsulant 180. The first encapsulant 180 covers the plurality of semiconductor layers 30, 40, 50 on the opposite side of the electrodes 80, 70. The first encapsulant 180 may partially cover the side surfaces of the plurality of semiconductor layers 30, 40, and 50 to expose the remainder of the sides of the plurality of semiconductor layers 30, 40, have. Alternatively, the side surfaces of the plurality of semiconductor layers 30, 40, and 50 may be completely covered with the first encapsulant 180. Alternatively, it is of course possible that the plurality of semiconductor layers 30, 40, 50 are brought into contact with the first encapsulant 180 without being buried.

Thereafter, the semiconductor light emitting device including the semiconductor light emitting chip 101 and the first encapsulation material 180 is separated from the base 201 and the dam 301 to manufacture a semiconductor light emitting device.

According to this example, preferably, the first encapsulant 180 containing a phosphor can be formed thinly on the surface of the semiconductor light emitting chip 101, so that the semiconductor light emitting element is formed on a substantially chip scale. The first encapsulant 180 formed on the opening 305 can be used in a required amount by adjusting the height so that the first encapsulant 180 containing the fluorescent material on the substrate side, The first encapsulant 180 is prevented from flowing into the first electrode 80 and the second electrode 70 side, because the first encapsulant 180 is advantageously formed with a uniform thickness and height. Further, since the first encapsulant 180 has a bonding force, it is convenient to place the semiconductor light emitting chip 101 thereon.

FIG. 8 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device includes a semiconductor light emitting chip 101 and a first encapsulant 180. FIG. The semiconductor light emitting chip is formed on one side of a plurality of semiconductor layers (30, 40, 50) and a plurality of semiconductor layers (30, 40, 50) And one electrode (80, 70). The first encapsulant 180 may be formed of a plurality of semiconductors 30, 40, 50 between the side of at least one electrode 80, 70 and the opposite side of at least one electrode 80, 50 on the opposite side of at least one electrode 80, 70 so that a portion of the side of the layer 30, 40, 50 is exposed. 8, the first encapsulant 180 partially covers the side surfaces of the plurality of semiconductor layers 30, 40, and 50 so that the remainder of the side surfaces of the plurality of semiconductor layers 30, 40, have.

In this example, the semiconductor light emitting chip 101 includes a growth substrate 10, a plurality of semiconductor layers 30, 40, and 50, a light reflection layer R, and electrodes 80 and 70 as flip chip elements . As an example of the III-nitride semiconductor light emitting device, sapphire, SiC, Si, GaN or the like is mainly used as the growth substrate 10, and the growth substrate 10 may be finally removed. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) A second semiconductor layer 50 (e.g., Mg-doped GaN) having another second conductivity, and a second semiconductor layer 50 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes. An active layer 40 (e.g., InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. The first electrode (80) is electrically connected to the first semiconductor layer (30) by an electrical connection (81) to supply electrons. The second electrode 70 is electrically connected to the second semiconductor layer 50 by an electrical connection 71 to supply holes. A light reflection layer R is interposed between the second semiconductor layer 50 and the electrodes 70 and 80. The light reflection layer R may be an insulating layer such as SiO 2 , a DBR (Distributed Bragg Reflector), or an ODR Reflector). ≪ / RTI >

The first encapsulant 180 may contain a phosphor, and the type of the phosphor is selected according to the light emitted by the semiconductor light emitting chip 101 and the characteristic of light to be obtained from the semiconductor light emitting element. For example, a method of using a single chip to obtain a white color by applying a fluorescent layer on a blue LED chip (for example, a GaN chip or an InGaN chip) or an NUV (near ultraviolet) LED chip is a simple and cost- Which is the most widely used. For example, a white LED that emits white light by using yellow light obtained by exciting a Y 3 Al 5 O 12 : Ce 3+ (YAG: Ce) fluorescent material by using blue light emitted from a blue LED and a part of the white light Is made. As another example, a near-ultraviolet LED and a fluorescent material that converts near-ultraviolet rays into blue, green, and red are combined to emit light similar to the light distribution of the sunlight.

9 is a view for explaining an example of a process of placing a semiconductor light emitting chip on a first encapsulation member formed in an opening. The device transporting apparatus 501 includes a semiconductor light emitting chip (not shown) 101 is picked up and placed on the first encapsulated first encapsulant 180, preferably soft cured. A process of providing a plurality of semiconductor light emitting chips 101 on the tape 13 by using a device array device (e.g., a sorter) may be preceded by the process shown in Fig. 3. For example, Can be referenced. The semiconductor light emitting chip 101 is detached from the tape 13 when the pin or the rod is pushed against the semiconductor light emitting chip 101 under the tape 13 as shown in Fig. The chip 101 can be electrically adsorbed or vacuum adsorbed.

9B, the element transferring apparatus 501 moves over the base 201 to place the semiconductor light emitting chip 101 on the first encapsulant 180 formed in each opening 305. As shown in Fig. The semiconductor light emitting chip 101 has a structure in which the electrodes 80 and 70 face upward and a plurality of semiconductor layers 30 and 40 and 50 opposite to the electrodes 80 and 70 contact the first encapsulant 180, A portion of the side surfaces of the plurality of semiconductor layers 30, 40, and 50 is exposed from the first encapsulant 180. When the plurality of semiconductor layers 30, 40, and 50 are buried in the first encapsulant 180, the material of the first encapsulant 180, the degree of soft curing, The depth of the plurality of semiconductor layers 30, 40, and 50 embedded in the first encapsulant 180 can be controlled by adjusting the operation and the like. For example, it is possible that the plurality of semiconductor layers 30, 40, and 50 are all buried in the first encapsulant 180 or only the surface of the substrate 10 is buried. In consideration of color temperature uniformity, 10 to the surface of the substrate.

Since the dam 301 and the opening 305 are frames formed precisely and highly precisely in advance, the dam 301 is moved in accordance with an instruction at that time using a shooter (e.g., see 5 in Fig. 2) The accuracy of the alignment of the semiconductor light emitting chip 101 is higher than when the elements are arranged on the base 201 or the flat tape 13 (see FIG. Thus, defects due to alignment inaccuracy are reduced. 9A), when the semiconductor light emitting chip 101 is attached to the tape 13 to provide the semiconductor light emitting chip 101 to the element transferring apparatus 501 (see Fig. 9A) The device 501 recognizes the empty space 14 (see FIG. 9A) of the semiconductor light emitting chip 101 and can transfer the other semiconductor light emitting chip 101, (201). Therefore, the burden is reduced when the semiconductor light emitting chip 101 is provided to the element transferring apparatus 501.

As an example of the device transferring apparatus 501, a device capable of recognizing a pattern or a shape and correcting the position to be transferred or the angle of the object, similar to the die bonder, may be used irrespective of the name.

10 is a view for explaining an example of correcting the angle and position by recognizing the shape or the pattern of the dam. In the process of arranging the tape 13 at a high speed by the shooter 5 (see Fig. 2) There may be a space 14 (see FIG. 3) where the semiconductor light emitting chip 101 is located, and there may be a semiconductor light emitting chip 16 (see FIG. 3) arranged so as to be slightly angled. The element transferring apparatus 501 can recognize the vacant space 14 and pick up the semiconductor light emitting chip 101 at the next position, as shown in Fig. 9A. The element transferring apparatus 501 can recognize the pattern (e.g., electrode separation line) of the electrodes 80 and 70 of the semiconductor light emitting chip 101 and correct the angle when picking up the semiconductor light emitting chip 101. [ 10, the device transferring apparatus 501 recognizes the shape of the dam 301 and corrects the position and the angle to form the semiconductor light emitting chip 101 on the first encapsulant 180 formed in the opening 305 Place correctly. For this purpose, the element transferring apparatus 501 can use a camera, an optical sensor, or the like. For example, the element transferring apparatus 501 can sense the difference in light and darkness of the dam 301 and the first encapsulant 180, the difference in light reflectance, or the difference in reflected light, or recognize the shape of the opening 305 . The element transferring apparatus 501 can recognize only a part without recognizing the opening 305 as a whole and the element transferring apparatus 501 is capable of recognizing the distance indicated from at least one of the face, edge, and point of the dam 301 due to the opening 305, The semiconductor light emitting chip 101 may be placed at a position corresponding to the coordinates. In addition, various methods can be designed to recognize the pattern of the dam 301 or the opening 305 and determine the coordinates on which the semiconductor light emitting chip 101 is to be placed based on the pattern. In this example, there is no special pattern in the base 201, and the dam 301 or the opening 305 serves as a reference for determining the coordinate of the semiconductor light emitting chip 101. [

Therefore, compared with the case where elements are arranged at predetermined intervals based on the semiconductor light emitting chip 101 initially disposed by using the object 5 on a flat base 201, alignment of the semiconductor light emitting chip 101 : Position and angle) are more accurate.

11 is a view for explaining an example of a dam provided on a base in the method of manufacturing a semiconductor light emitting device according to the present disclosure, in which a mask or a dam 301 having a plurality of openings 305 formed on a base 201 is provided can do. The base 201 may be a rigid metal plate or a non-metal plate, or may be a flexible film or tape. For example, Al, Cu, Ag, Cu-Al alloy, Cu-Ag alloy, Cu-Au alloy, SUS (stainless steel) and the like can be used as the metal plate, Of course, it can be used. Plastics can be used as non-metallic plates, and various colors and light reflectance can be selected. There is no particular limitation on the film or the tape, and it is preferable that the film or tape has adhesiveness or adhesiveness and has heat resistance. For example, a heat-resistant tape, a blue tape, or the like can be used, and various colors and light reflectance can be selected.

The dam 301 may be a plastic, a metal, or a member plated with a surface, and a plurality of openings 305 are formed. The plurality of openings 305 formed in the dam 301 are arranged in a plurality of rows and columns as an example. It goes without saying that the number, shape, and arrangement of the openings 305 can be appropriately changed as needed. The opening 305 may follow the shape of the semiconductor light emitting chip 101, but may have a shape different from that of the semiconductor light emitting chip 101. The material of the dam 301 may be exemplified by the material exemplified by the material of the base 201. It is preferable that the dam 301 is made of a somewhat rigid material to maintain the shape of the dam 301 and the opening 305, It is preferable to select the material effective for the above.

On the other hand, preferably, the semiconductor light emitting chip 101 can be placed on the first encapsulant 180 formed by each opening 305 by using the above-described element transferring apparatus 501 (see FIG. 9). The dam 301 can be recognized as a pattern for correcting the position or angle at which the element transporting apparatus 501 places the semiconductor light emitting chip 101 and functions as a dam of the first encapsulant 180. [ Even if the base 201 and the dam 301 are made of the same material, the element transferring apparatus 501 can transfer the dam 301 and the first encapsulant 301 The semiconductor light emitting chip 101 can be distinguished from the first sealing material 180 so that the semiconductor light emitting chip 101 can be placed at the correct position on the first sealing material 180. [ Further, since the dam 301 serves as a guide for the arrangement of the semiconductor light emitting chips 101, an additional pattern forming process is not required for the base 201. [

12 is a view for explaining an example of a method of providing the dam and the first encapsulant 180 on the base. For example, in this example, the base 201 and the dam 301 are pressurized And come into contact with each other. For example, as shown in Fig. 12A, the clamp 401 can be used to bring the base 201 and the dam 301 into contact. As described above, according to the present embodiment, the method for contacting the base 201 with the dam 301 is simple, and the dam 301 can be removed from the base 201 by loosening the clamp 401, which is a convenient advantage . An embodiment in which an adhesive material is interposed between the base 201 and the dam 301 is of course possible. For example, the adhesive material may be selected from a variety of conductive pastes, insulating pastes, polymeric adhesives, and the like, and is not particularly limited. If a material which loses adhesion force in any temperature range is used, separation can be facilitated in the temperature range when the base 201 and the dam 301 are separated. Alternatively, a tape that loses its adhesive strength after being irradiated with ultraviolet rays may be used as the base 201. 12B, the first encapsulant 180 may be supplied to the base 201 exposed through the opening 305 by a method such as dispensing or printing to a desired height .

Thereafter, the semiconductor light emitting device including the semiconductor light emitting chip 101 and the first encapsulation material 180 is separated from the base 201 and the dam 301 to manufacture a semiconductor light emitting device.

13 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the method of manufacturing a semiconductor light emitting device, first, a dam 301 having an opening 305 formed on a base 201, The first encapsulant 180 containing the fluorescent material is provided on the base 201 exposed by the first encapsulant 305. Next, the semiconductor light emitting chip 101 is placed on the first encapsulant 180. In the course of placing the semiconductor light emitting chip 101 on the first encapsulant 180, a part of the side surfaces of the plurality of semiconductor layers 30, 40, and 50 may be exposed. This process can be applied to the examples described in FIGS. 7 to 12. FIG.

Thereafter, as shown in FIG. 13A, the exposed portion of the plurality of semiconductor layers 30, 40, 50 is sandwiched between the dam 301 and the exposed side surfaces of the plurality of semiconductor layers 30, 2 sealant 170 is formed. The second encapsulant 170 may be made of a silicon-based material, an epoxy-based material, or an electro-magnetic compatibility (EMC) material to prevent electromagnetic interference. For example, when the second encapsulant 170 is made of at least one of white silicon and high-reflectance epoxy, the second encapsulant 170 may be opaque, Light can be reflected toward the ash 180 side. Alternatively, the second encapsulant 170 may simply be formed of a material such as transparent silicone.

On the other hand, the second encapsulant 170 may be provided between the semiconductor light emitting chip 101 and the dam 301 by a method such as dispensing or printing, but may be provided on the side of the electrodes 80 and 70 Or may be contaminated even if the second electrode 70 is not covered with the semiconductor layer 30, 40, 50 or the semiconductor layer 30, 40, 50 around the electrode 80, 70. Therefore, a process of partially removing the second encapsulant 170 to expose the electrodes 80 and 70 or removing the contamination may be added. For example, the upward facing electrodes 80, 70 and the second encapsulant 170 may be patterned by plasma etching, mechanical brushing, or polishing, The electrodes 80 and 70 are exposed and the contamination is removed.

Next, as shown in Fig. 13C, the semiconductor light emitting element composed of the semiconductor light emitting chip 101, the first encapsulant 180, and the second encapsulant 170 is separated from the base 201 and the dam 301 Whereby a semiconductor light emitting device as shown in Fig. 14 is manufactured. As a separation method, a method of removing the base 201 and extracting the semiconductor light emitting element from the dam 301 may be used. 13A, the semiconductor light emitting chip 101 is placed on the first encapsulant 180 and the first encapsulant 180 is cured before the base 201 And then, the process described in FIG. 13 may be performed.

FIG. 15 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure. As shown in FIG. 15A, the semiconductor light emitting device includes a plurality of semiconductor layers 30, And the second encapsulant 170 is formed so as to cover the plurality of semiconductor layers 30, 40, 50 on the electrodes 80, 70 side. At this time, the second encapsulant 170 ) May be made of a material having a good light reflectance, an EMC material, or simply made of transparent silicon. As another example, as shown in FIG. 15B, the dam 301 is cut by sawing or scraping and breaking, and the base 201 is removed to remove the first encapsulant 180 and the second encapsulant 180, A semiconductor light emitting device having a junction 302 (a cut-off dam) on the outer surface of the semiconductor light emitting device 170 may be manufactured. The bonding portion 302 may be made of a metal. When the electrodes 80 and 70 are bonded to the external electrode, the bonding portion 302 may be in contact with the outside to improve the bonding strength.

16A and 16B are diagrams for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same. In the method for manufacturing a semiconductor light emitting device, first, as shown in FIG. 16A, The semiconductor light emitting portion 105 is placed on the base 201 exposed by the opening 305. The semiconductor light emitting portion 105 is formed on the base 201, An example in which the dam 301 is provided on the base 201 can be applied to the example described in Fig. As the dam 301, a dam 301 having a larger opening 305 than that shown in Fig. 11 may be used. Here, the base 201 and the dam 301 can be separated or combined as separate members, but, alternatively, the base 201 and the dam 301 can be the bottom and the wall of a single frame. The semiconductor light emitting portion 105 includes a semiconductor light emitting chip 101 and an encapsulant. The semiconductor light emitting portion 105 may be the semiconductor light emitting element described with reference to FIGS. The process of placing the semiconductor light emitting portion 105 on the base 201 exposed to the opening 305 can be performed by using the element transferring apparatus 501 described above and the plurality of semiconductor layers 30, 40, and 50) faces the base 201 and the electrodes 80 and 70 are placed face up.

Thereafter, as shown in FIG. 16B, a third encapsulant 190 or a fixed portion is formed between the dam 301 and the semiconductor light emitting portion 105. 8, the third encapsulant 190 is in contact with the exposed side of the plurality of semiconductor layers 30, 40, 50 and the first encapsulant 180. In the case where the semiconductor encapsulant 105 is the example shown in FIG. 14, the third encapsulant 190 is in contact with the first encapsulant 180 and the second encapsulant 170. When the semiconductor encapsulant 105 is the example shown in Fig. As such, the third sealing material 190 may be used as a fixing part for protecting the semiconductor light emitting part 105 or for fixing the semiconductor light emitting chip and the sealing materials 180 and 170. As the third encapsulant 190, a variety of materials such as a silicone type and an epoxy type can be used. The third encapsulant 190 is opaque and is made of a material having a high light reflectance, so that the third encapsulant 190 can reflect light. For example, the third encapsulant 190 may be made of at least one of white silicon, and high reflective epoxy. In this case, the third sealing material 190 can be used as a reflector or a reflecting wall. Alternatively, the third encapsulant 190 may simply be formed of a material such as transparent silicone. Meanwhile, the third encapsulant 190 may be made of an electro-magnetic compatibility (EMC) material to prevent electromagnetic interference. The second encapsulant 170 may also be made of a material having excellent light reflectance, a transparent material, an EMC material, or the like.

The third encapsulant 190 is provided between the semiconductor light emitting portion 105 and the dam 301 by a method such as dispensing or printing but the third encapsulant 190 is provided on the side of the electrodes 80 and 70 Or may be contaminated even when the electrodes 80 and 70 are not covered. Accordingly, the third sealant 190 may be partially removed to expose the electrodes 80 and 70 or to remove the contamination. 16b through plasma etching, mechanical brushing, or polishing methods for the upward facing electrodes 80, 70 and the third encapsulant 190, As shown, the electrodes 80, 70 are exposed and remove contamination.

Next, as shown in FIG. 16C, the first conductive portion 141 covering the first exposed portion of the first electrode 80 and the third sealed portion 190, and the second conductive portion 141 covering the third exposed portion A second conductive portion 142 covering another portion of the ash 190 is formed.

Thereafter, the semiconductor light emitting device including the semiconductor light emitting chip 101 and the sealing materials 180, 170 and 190 is separated from the base 201 and the dam 301 to produce a semiconductor light emitting device as shown in FIG. As a separation method, a method of removing the base 201 and extracting the semiconductor light emitting element from the dam 301, a method of cutting the dam 301, or the like can be used.

The manufacturing method of the semiconductor light emitting device of this embodiment may include a process of preparing the semiconductor light emitting portion 105. As a method of preparing the semiconductor light emitting portion 105, the method described in Figs. 7 to 15 can be used.

17A and 17B are views for explaining an example of a process of forming the conductive portion described in FIG. 16, wherein FIG. 17A is a top view of the semiconductor light emitting device, and FIG. 17B is a view (bottom view). The semiconductor light emitting chip 101 is a flip chip in which the first electrode 80 and the second electrode 70 are opposed to each other and preferably the first conductive portion 141 and the second conductive portion 142 The first electrode 80 and the second electrode 70 are opposed to each other. The first conductive part 141 and the second conductive part 142 may be formed up to the edge of the third encapsulant 190, but may be formed to be apart from the edge. The third encapsulant 190 may fill the gap between the first conductive portion 141 and the second conductive portion 142. In this case, The conductive portions 142 are insulated from each other. Therefore, the distance between the first conductive portion 141 and the second conductive portion 142 can be appropriately changed as needed. 17A, the distance between the first conductive portion 141 and the second conductive portion 142 may be equal to or less than the distance between the first electrode 80 and the second electrode 70, It is possible.

The semiconductor light emitting device is formed in a chip scale without encapsulating materials 180, 170 and 190 formed compactly in the semiconductor light emitting chip 101 so that the size is not unnecessarily enlarged as a whole. Such a semiconductor light emitting device may be mounted on a submount in an SMD type. And may be bonded to the external electrode of the submount using a bonding agent such as solder or conductive paste when bonding without bonding agent (e.g., eutectic bonding). The conductive portions 141 and 142 have an advantage of increasing the bonding area to facilitate the bonding, increasing the bonding strength and increasing the heat radiation area.

18 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. The semiconductor light emitting portion 105 includes a semiconductor light emitting chip, a first encapsulant 180, and a second encapsulant 170 ). The first encapsulant 180 includes a phosphor and surrounds the semiconductor light emitting chip to expose the electrodes 80 and 70. The second encapsulant 170 encapsulates the first encapsulant 180). The second encapsulant 170 may be made of transparent silicon. The semiconductor light emitting portion 105 is placed on the base 201 exposed by the opening 305 to form the third encapsulant 190 and the first conductive portion 141 and the second conductive portion 142 The processes described in FIGS. 16 and 17 may be applied.

FIG. 19 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure, and can be manufactured by the manufacturing method of the semiconductor light emitting device described in FIGS. The example shown in Fig. 19A is an example using the device shown in Fig. 8 as the semiconductor light emitting portion 105, and the example shown in Fig. 19B is an example using the device shown in Fig. 14 as the semiconductor light emitting portion 105. [ 19C is an example in which the second encapsulant 170 is removed and the first encapsulant 180 surrounds the semiconductor light emitting chip 101 and the example shown in FIG. 19D is an example in which the conductive parts 141 and 142 ), The semiconductor light emitting device is separated from the base 201 and the dam 301.

20 and 21 are views showing an example of a method of inspecting a semiconductor light emitting device according to the present disclosure. In the method of inspecting a semiconductor light emitting device, as shown in FIG. 20A, A semiconductor light emitting chip 101 formed on each opening 305 and having electrodes 80 and 70 and a semiconductor light emitting chip 101 formed on each opening 305 to expose the electrodes 80 and 70, And a first encapsulant 180 surrounding the first encapsulant 101. Thereafter, an optical measuring device 701 for receiving light from the semiconductor light emitting chip 101 is provided on the side opposite to the electrodes 80 and 70 side. Next, an electric current is applied to the electrodes 80 and 70 of the selected semiconductor light emitting chip 101 through the probe 707, and the light from the semiconductor light emitting chip 101 is measured by the optical measuring device 701. The semiconductor light emitting device described with reference to FIGS. 7 to 15 can be applied to the semiconductor light emitting device. After removing the base 201 from FIG. 7C or FIG. 13C, 701) can be arranged and measured as described above.

20B, the dam 301, the first encapsulant 180, the third encapsulant 190, and the semiconductor light emitting chip 101 and the conductive portions 141 and 142 are integrally joined to each other, Current can be applied to the conductive portions 141 and 142 which are electrically connected to the electrodes 80 and 70 of the semiconductor light emitting chip 101 in a state that the semiconductor light emitting chip 101 is in a state of being exposed. The semiconductor light emitting device described with reference to FIGS. 16 to 19 can be applied to the semiconductor light emitting device. After removing the base 201 in FIG. 16C or FIG. 18C, 701) can be arranged and measured as described above.

In order for the light measurement of the semiconductor light emitting element to be accurate, it is preferable to measure the light emitted from the semiconductor light emitting element as much as possible and measure without any peripheral interference. 20, the dam 301 around the first encapsulant 180 reflects a part of the light from the semiconductor light emitting chip 101 to the optical meter 701 side, and the dam 301 Shields light from being incident on the neighboring encapsulant 170. Further, when the second encapsulant 170 is provided with a highly reflective material, the light is prevented from leaking to the electrodes 80 and 70, so that no additional optical meter is required on the electrodes 80 and 70 side. Accordingly, even if the individual semiconductor light emitting devices are not inspected by inserting the individual semiconductor light emitting devices into the optical measuring device 701, leaked light is remarkably reduced and measurement can be performed without interference by surrounding phosphors. You can measure the light exactly as you put it. In addition, it is possible to perform inspection while moving the optical measuring instrument 701 or while moving the combined body, thereby speeding up the inspection.

An integrating sphere may be used as the optical measuring device 701. For example, the integrating sphere is a spherical device having a hollow portion on the inner side, and is a device that receives light into the hollow portion and measures its characteristics. For example, an optical property measuring device may be mounted on the integrating sphere. The optical property measuring device measures the brightness, wavelength, luminous intensity, illuminance, spectral distribution, color temperature, color coordinate, etc. of light emitted from the semiconductor light emitting device, and measures the optical characteristics of the semiconductor light emitting device by measuring at least one of them. do. A spectrometer or photo detector can be used as the optical property measuring device.

20 shows an example in which the base 201 is measured in a state of being removed. However, when the base 201 is transparent or has excellent translucency, a method of measuring light with the base 201 as it is can be considered have.

Referring to FIG. 21, according to the inspection method of the semiconductor light emitting device according to the present example, when the semiconductor light emitting device on the inner side of the dam 301 and the semiconductor light emitting device on the edge are inspected, can do. For example, a plurality of semiconductor light emitting devices may be attached and inspected on a tape without the dam 301, or the sealing material may be entirely sealed to inspect each semiconductor light emitting device. At this time, in the arrangement of the plurality of semiconductor light emitting elements, a structure for substantially scatting around the semiconductor light emitting element to be measured is uniformly distributed. On the other hand, in the edge semiconductor light emitting device, the scattering of the light differs between the direction in which the semiconductor light emitting device is present and the direction in which there is no semiconductor light emitting device. Consequently, light is measured differently from the inner side and the edge of the tape. However, when the semiconductor light emitting element on the inner side and the edge semiconductor light emitting element are individually inserted into the integrating sphere, the light is measured almost similarly.

According to the inspection method of the semiconductor light emitting device according to this example, since the dam 301 surrounding each semiconductor light emitting element functions as a reflector, there is no difference in conditions between the inside and the edge, and therefore, more accurate optical measurement is possible. It is contemplated that the dam 301 may be formed of metal to better function as a reflector, or may be coated with a material having a high reflectance.

22 is a view for explaining examples of a method of separating a semiconductor light emitting element from a base and a dam, and can be applied to the semiconductor light emitting element described in Figs. 7 to 19 and the manufacturing method thereof.

For example, referring to FIG. 22A, the semiconductor light emitting device including the sealing materials 180 and 170 and the semiconductor light emitting chip 101 is separated from the base 201 after the sealing materials 180 and 170 are cured. Thereafter, the semiconductor light emitting element is pushed down from the dam 301 by striking the semiconductor light emitting element under the pin 802 or the rod using a spotter or the like, and the vacuum adsorption or electrical fixing means 801 ) Can be used to catch and transport the semiconductor light emitting element. 16 and 17, the semiconductor light emitting device can be taken out and simultaneously shot based on the inspection result.

Referring to FIG. 22B, each semiconductor light emitting element can be taken out of the dam 301 by using the embossing plate 1005. The protrusions 1007 corresponding to the respective openings 305 are provided in the embossing plate 1005. A plurality of semiconductor light emitting elements may be pushed out by the protrusion 1007 at a time or a tape may be attached to the opposite side of the embossing plate 1005 in advance. The protrusion 1007 has a proper surface so as not to damage the semiconductor light emitting element.

Referring to FIG. 22C, since the bonding force between the dam 301 and the sealing material 170 is applied, the semiconductor light emitting device may be damaged if the force is too strong. Therefore, (301) is used, and the aforementioned embossing plate (1005) is used. Here, the bonding force adjusting film may be formed not only as a layer on the surface of the dam 301 but also in a form in which the bonding force adjusting material is attached to the surface of the dam 301 in the form of particles. For example, the adhesion force regulating film 350 is a release coating layer 350 formed on the surface of the dam 301. As the release coating layer 350, a spray method, a paint method, or the like may be used. It may be releasably coated before the dam 301 is provided on the base 201. [ Alternatively, a release coating may be applied after placing the dam 301 on the base 201. In this case, a release coating is formed on both the dam 301 and the upper surface of the base 201. Since the dam 301 can be made of both plastic and metal, and the sealing material 170 can be used in the above-described examples, the releasing coating material provides releasability or lubricity upon bonding of resin or silicone to metal or plastic, A material having electrical insulation is preferable. These release materials can be selected from among various products sold. As an example, a spray method may be applied and the release material may be in the form of an aerosol. As shown in Fig. 21C, the semiconductor light emitting element may be pulled out of the dam 301 in a state where the base 201 is engaged.

Referring again to FIG. 6, when cutting the sealing material 17, the cut surface of the sealing material 17 cut by the cutter 31 is cut by the cutter 31, There is a problem of deterioration. On the other hand, if the arrangement of the semiconductor light emitting chips 101 arranged on the tape (for example, 13 in Fig. 3) is slightly distorted, defects may occur in many semiconductor light emitting devices at the time of cutting by the cutter 31. [

22C, since the sealing material 170 is easily removed from the dam 301 by the bonding force adjusting film or the release coating layer 350 without damaging the sealing material 170, the surface of the sealing material 170 is removed from the surface So that the light extraction efficiency is prevented from being degraded. In addition, since the accuracy of alignment is improved by using the dam 301 as a guide for alignment of the semiconductor light emitting chip 101, defects due to misalignment are reduced.

23A and 23B are diagrams for explaining still another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same. First, as shown in FIG. 23A, a dam 301 having an opening 305 in a base 201 is provided . In the dam 301, a cutting groove 303 is formed around the opening 305. The cutting groove 303 is preferably formed at a certain depth from the upper surface of the dam 301 and is formed so as to surround the opening 305. The cutting groove 303 may be formed by cutting the die 301 so as to form the grooves 303 for cutting or by extrusion molding. Subsequently, as shown in FIG. 23B, after the first encapsulant 180 is formed on the base 201 exposed in the opening 305, soft curing is performed. The semiconductor light emitting chip 101 is placed on the first encapsulant 180 with the electrodes 80 and 70 facing upward and the second encapsulant 170 is placed between the dam 301 and the semiconductor light emitting chip 101 .

Next, the dam 301 is cut along the cutting groove 303. A method of breaking the dam 301 along the cutting groove 303 or a method of cutting the dam 301 by the cutter 31 entering the groove for cutting 303, A method of scribing and breaking the remaining portion after cutting or scribing a portion of the dam 301 of the cutting groove 303 with a predetermined depth by a crying device may be used. When cutting the entire height or thickness from the lower surface to the upper surface of the dam 301, stress or stress due to external force is generated in the process of cutting so that there is a risk of damage to the device. However, The risk of damage or breakage is reduced. In addition, the time for braking is shortened. As a result, the efficiency of the cutting process is improved and the defects are reduced

Next, the base 201 is removed and separated into semiconductor light emitting devices composed of the semiconductor light emitting chip 101, the sealing materials 180 and 170, and the bonding portions 302 (cut dams) as shown in FIG. 23C.

FIG. 24 is a view for explaining still another example of the semiconductor light emitting device according to the present invention and the method for manufacturing the same, wherein the shape of the semiconductor light emitting device is formed according to the shape of the opening 305 of the dam 301. The openings 305 of the dam 301 can be changed to a polygonal shape such as a quadrangle (see FIG. 24A), a triangle (see FIG. 24C) The shape on the plane view is also formed by a polygon such as a quadrangle, a triangle, or the like, a circle, an ellipse, or the like. When the shape is changed in this manner, the direction and amount of light emitted from the semiconductor light emitting element may be changed according to the shape of the encapsulant 180, 170.

25 is a view for explaining another example of the semiconductor light emitting device and the method for manufacturing the same according to the present disclosure, wherein the opening 305 of the dam 301 is formed into a shape having a slope or a trapezoidal shape on a sectional view, Or convex curved surface. Accordingly, the shape of the cross section of the sealing material 180 also has a trapezoidal or convex curved surface or a concave curved surface.

Various embodiments of the present disclosure will be described below.

(1) A method of manufacturing a semiconductor light emitting device, comprising: providing a first dam having an opening formed on a first base; A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer having a first conductivity type, A plurality of semiconductor layers interposed between the first and second semiconductor layers and having an active layer which generates light by recombination of electrons and holes, at least one electrode for supplying current to the plurality of semiconductor layers, and a plurality Placing a semiconductor light emitting portion on a first base such that the first encapsulation material faces the first base and the at least one electrode faces upward; Forming a second encapsulant between the first dam and the semiconductor light emitting portion; And forming at least one conductive portion to cover at least one of the exposed upper electrode and a portion of the second encapsulant.

(2) The semiconductor light emitting portion is a flip chip having a first electrode electrically connected to the first semiconductor layer on one side of the plurality of semiconductor layers, and a second electrode electrically connected to the second semiconductor layer, Wherein a first conductive portion covering a portion of the first electrode and the second encapsulant and a second conductive portion covering the other portion of the second encapsulant and the second encapsulant are formed in the step of forming the conductive portion Gt;

(3) The method of manufacturing a semiconductor light emitting device according to (3), wherein the first encapsulant contains a phosphor and the second encapsulant comprises at least one of an opaque material and an EMC (electro-magnetic compatibility) material for reflecting light.

(4) exposing the first electrode and the second electrode by removing a part of the second encapsulant before the step of forming the conductive part.

(5) separating the semiconductor light emitting device including the semiconductor light emitting portion, the first sealing material, the second sealing material, and the conductive portion from the first base and the first dam after the step of forming the conductive portion .

(6) preparing a semiconductor light emitting portion before the step of placing the semiconductor light emitting portion on the first base, the step of preparing the semiconductor light emitting portion includes: a step of providing a second dam having an opening on the second base; Forming a first encapsulant on a second base exposed through the opening; A method for manufacturing a semiconductor light emitting chip, comprising the steps of: placing a semiconductor light emitting chip on a first encapsulant, the first encapsulant comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A semiconductor light emitting chip including a plurality of semiconductor layers interposed between the plurality of semiconductor layers and having an active layer that generates light by recombination of electrons and holes and an electrode for supplying current to the plurality of semiconductor layers, Placing the semiconductor light emitting chip on the first encapsulant so that at least a portion of the layer is buried in the first encapsulant; And separating the semiconductor light emitting portion including the semiconductor light emitting chip and the first sealing material from the second base and the second dam.

(7) a step of forming a second encapsulation material between the first dam and the semiconductor light emitting portion, wherein a part of the side surfaces of the plurality of semiconductor layers is exposed from the first encapsulation material in the process of placing the semiconductor light emitting chip on the first encapsulation material Wherein the second encapsulant is in contact with the exposed side of the first encapsulant and the plurality of semiconductor layers.

(8) In the process of placing the semiconductor light emitting chip on the first encapsulation material, the first encapsulation material covers the side surfaces of the plurality of semiconductor layers and the plurality of semiconductor layers on the opposite side of the electrode, Wherein in the step of forming the sealing material, the second sealing material is in contact with the first sealing material.

(9) In the process of placing the semiconductor light emitting chip on the first encapsulation material, a part of the plurality of semiconductor layers on the opposite side of the electrode is buried in the first encapsulation material, a part of the side faces of the plurality of semiconductor layers are exposed, Preparing a third encapsulation material between the second dam and the exposed side surfaces of the plurality of semiconductor layers.

(10) The method for manufacturing a semiconductor light emitting device according to (10), wherein the first encapsulant comprises a phosphor, and the second encapsulant and the third encapsulant are made of at least one of a material opaque to reflect light and an EMC .

(11) preparing a semiconductor light emitting portion before the step of placing the semiconductor light emitting portion on the first base, the step of preparing the semiconductor light emitting portion includes: a step of providing a second dam having an opening on the second base; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer having a second conductivity different from the first conductivity, A semiconductor light emitting chip including a plurality of semiconductor layers interposed between the semiconductor layers and having an active layer that generates light by recombination of electrons and holes and an electrode for supplying current to the plurality of semiconductor layers, Placing the semiconductor light emitting chip in contact with the semiconductor light emitting chip; Forming a first encapsulation material on the opening to cover the semiconductor light emitting chip; And separating the semiconductor light emitting portion including the semiconductor light emitting chip and the first sealing material from the second base and the second dam.

(12) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first and second semiconductor layers, A plurality of semiconductor layers each having an active layer that generates light by recombination of holes; At least one electrode formed on one side of the plurality of semiconductor layers to supply current to the plurality of semiconductor layers; A first encapsulant surrounding the plurality of semiconductor layers to expose at least one electrode; A second encapsulant wrapping the first encapsulant such that at least one electrode is exposed and the first encapsulant is exposed to the opposite side of the at least one electrode; And at least one conductive part formed on at least one electrode and a part of the second encapsulant exposed to at least one electrode side.

(13) The semiconductor light emitting device according to (13), wherein the first encapsulant comprises a phosphor and the second encapsulant comprises at least one of an opaque material and an EMC (electro-magnetic compatibility) material for reflecting light.

(14) A semiconductor light emitting unit is a flip chip having a first electrode electrically connected to a first semiconductor layer on one side of a plurality of semiconductor layers, and a second electrode electrically connected to a second semiconductor layer, An insulating reflecting layer formed between the plurality of semiconductor layers and the first and second electrodes and reflecting light from the active layer; A first electrical connection through the insulating reflective layer and electrically connecting the first semiconductor layer and the first electrode; And a second electrical connection through the insulating reflection layer and electrically connecting the second semiconductor layer and the second electrode, wherein the conductive part includes: a first conductive part integrated with the first electrode and the second sealing material; And a second conductive part spaced apart from the first conductive part and integrated with the second electrode and the second encapsulant.

(15) The first encapsulant surrounds a plurality of semiconductor layers on the opposite side of the electrode and a part of the side faces of the plurality of semiconductor layers, and covers the side faces of the plurality of semiconductor layers exposed from the first encapsulant And a third encapsulation material covered by the second encapsulation material.

According to the semiconductor light emitting device and the method of manufacturing the same according to the present disclosure, the first encapsulant containing the fluorescent material can be formed thinly on the surface of the semiconductor light emitting chip, and the semiconductor light emitting device has a size substantially along the outline of the encapsulant, It is possible to provide a semiconductor light emitting device and / or a light emitting device package formed on a chip scale.

In addition, the first encapsulant formed in the opening can be used in a required amount by adjusting the height, and the first encapsulant is prevented from flowing into the electrode. Further, since the first encapsulant has a bonding force, it is convenient to place the semiconductor light emitting chip.

Further, the accuracy of alignment of the semiconductor light emitting chip is improved by using the mask or the dam as a guide pattern of the element transfer device for alignment of the semiconductor light emitting chip and by using it as a dam of the sealing material.

This also reduces the occurrence of defects due to the misalignment of the semiconductor light emitting chips in the separation process (e.g., sawing, etc.) into individual devices.

Compared with the method in which the dam is disposed on the tape on which the semiconductor light emitting chips are arranged and the sealing material is supplied after an additional process of filling the tape with an empty space or correcting the angle of the broken semiconductor light emitting chip, Is efficient because the above-mentioned additional process is unnecessary.

Further, since the sealing material is well pulled out from the dam where the release coating layer is formed, the surface of the sealing material is scraped and the light output efficiency is prevented from being lowered.

Further, since the mask or the dam reflects light toward the optical measuring instrument, the semiconductor light emitting element can be inspected more accurately and quickly.

70, 80: electrode 101: semiconductor light emitting chip 201: base
301: dam 305: opening 180: first sealant
170: second sealing material 190: third sealing material 701: optical measuring instrument

Claims (15)

A method of manufacturing a semiconductor light emitting device,
Comprising: a first dam having an opening formed in a first base;
A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer having a first conductivity type, A plurality of semiconductor layers interposed between the first and second semiconductor layers and having an active layer which generates light by recombination of electrons and holes, at least one electrode for supplying current to the plurality of semiconductor layers, and a plurality Placing a semiconductor light emitting portion on a first base such that the first encapsulation material faces the first base and the at least one electrode faces upward;
Forming a second encapsulant between the first dam and the semiconductor light emitting portion including the first encapsulant; And
And forming at least one conductive part to cover at least one of the exposed electrodes and a part of the second encapsulant. The method according to claim 1,
The semiconductor light emitting portion is a flip chip having a first electrode electrically connected to the first semiconductor layer on one side of the plurality of semiconductor layers and a second electrode electrically connected to the second semiconductor layer,
In the step of forming the conductive portion,
Wherein a first conductive portion covering a portion of the first electrode and the second encapsulant and a second conductive portion covering the other portion of the second encapsulant and the second encapsulant are formed. The method according to claim 1,
The first encapsulant contains a phosphor,
Wherein the second encapsulant comprises at least one of an opaque material and an electro-magnetic compatibility material to reflect light. The method of claim 2,
Before the step of forming the conductive part,
And exposing the first electrode and the second electrode by removing a part of the second encapsulant. The method according to claim 1,
After forming the conductive portion,
And separating the semiconductor light emitting device including the semiconductor light emitting portion, the first sealing material, the second sealing material, and the conductive portion from the first base and the first dam. The method according to claim 1,
Preparing a semiconductor light emitting portion before placing the semiconductor light emitting portion on the first base,
Preparing the semiconductor light emitting portion comprises:
And a second dam having an opening formed on the second base;
Forming a first encapsulant on a second base exposed through the opening;
A method for manufacturing a semiconductor light emitting chip, comprising the steps of: placing a semiconductor light emitting chip on a first encapsulant, the first encapsulant comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A semiconductor light emitting chip including a plurality of semiconductor layers interposed between the plurality of semiconductor layers and having an active layer that generates light by recombination of electrons and holes and an electrode for supplying current to the plurality of semiconductor layers, Placing the semiconductor light emitting chip on the first encapsulant so that at least a portion of the layer is buried in the first encapsulant; And
And separating the semiconductor light emitting portion including the first sealing material from the second base and the second dam. The method of claim 6,
In the process of placing the semiconductor light emitting chip on the first encapsulation material,
A part of the side surface of the plurality of semiconductor layers is exposed from the first encapsulant,
In the step of forming the second sealing material between the first dam and the semiconductor light emitting portion,
And the second encapsulant is in contact with the exposed side of the first encapsulant and the plurality of semiconductor layers. The method of claim 6,
In the process of placing the semiconductor light emitting chip on the first encapsulation material,
The first encapsulant covers the side surfaces of the plurality of semiconductor layers and the plurality of semiconductor layers opposite to the electrodes,
In the step of forming the second sealing material between the first dam and the semiconductor light emitting portion,
And the second encapsulant is in contact with the first encapsulant. The method of claim 6,
In the process of placing the semiconductor light emitting chip on the first encapsulation material,
A part of the plurality of semiconductor layers on the opposite side of the electrode is buried in the first encapsulation material, a part of the side surfaces of the plurality of semiconductor layers is exposed,
Preparing the semiconductor light emitting portion comprises:
And forming a third encapsulant between the second dam and the exposed side surfaces of the plurality of semiconductor layers. The method of claim 9,
The first encapsulant contains a phosphor,
Wherein the second encapsulant and the third encapsulant are made of at least one of an opaque material and an electro-magnetic compatibility material to reflect light. The method according to claim 1,
Preparing a semiconductor light emitting portion before placing the semiconductor light emitting portion on the first base,
Preparing the semiconductor light emitting portion comprises:
And a second dam having an opening formed on the second base;
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer having a second conductivity different from the first conductivity, A semiconductor light emitting chip including a plurality of semiconductor layers interposed between the semiconductor layers and having an active layer that generates light by recombination of electrons and holes and an electrode for supplying current to the plurality of semiconductor layers, Placing the semiconductor light emitting chip in contact with the semiconductor light emitting chip;
Forming a first encapsulation material on the opening to cover the semiconductor light emitting chip; And
And separating the semiconductor light emitting portion including the first sealing material from the second base and the second dam. delete delete delete delete
KR1020140144087A 2014-09-12 2014-10-23 Semiconductor light emitting device and method of manufacturing the same KR101638124B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020140144087A KR101638124B1 (en) 2014-10-23 2014-10-23 Semiconductor light emitting device and method of manufacturing the same
PCT/KR2015/009619 WO2016039593A1 (en) 2014-09-12 2015-09-14 Method for manufacturing semiconductor light-emitting device
CN201580048716.1A CN106688115B (en) 2014-09-12 2015-09-14 The manufacturing method of semiconductor light-emitting elements
US15/510,585 US10411176B2 (en) 2014-09-12 2015-09-14 Method for manufacturing semiconductor light-emitting device
US16/519,546 US10930832B2 (en) 2014-09-12 2019-07-23 Method for manufacturing semiconductor light emitting device
US16/519,467 US10763415B2 (en) 2014-09-12 2019-07-23 Method for manufacturing semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140144087A KR101638124B1 (en) 2014-10-23 2014-10-23 Semiconductor light emitting device and method of manufacturing the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160080753A Division KR20160082953A (en) 2016-06-28 2016-06-28 Semiconductor light emitting device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR20160048258A KR20160048258A (en) 2016-05-04
KR101638124B1 true KR101638124B1 (en) 2016-07-11

Family

ID=56021822

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140144087A KR101638124B1 (en) 2014-09-12 2014-10-23 Semiconductor light emitting device and method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR101638124B1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101877743B1 (en) * 2016-09-26 2018-07-13 주식회사 세미콘라이트 Semiconductor light emitting device and method of manufacturing the same
WO2018056788A1 (en) * 2016-09-26 2018-03-29 주식회사 세미콘라이트 Semiconductor light-emitting element and method for manufacturing same
KR101877237B1 (en) * 2017-05-23 2018-08-09 주식회사 세미콘라이트 Semiconductor light emitting device and method of manufacturing the same
KR102035043B1 (en) * 2017-11-28 2019-10-22 (주)라이타이저 Chip scale package of three plane light emitting and method for manufacturing thereof
KR102140993B1 (en) * 2019-04-01 2020-08-05 (주)라이타이저 Light Emitting Diode Chip Scale Package and method for manufacturing thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256769A (en) * 2011-06-10 2012-12-27 Fuji Mach Mfg Co Ltd Semiconductor device and manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100109025A1 (en) * 2008-11-05 2010-05-06 Koninklijke Philips Electronics N.V. Over the mold phosphor lens for an led
KR20100080423A (en) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 Light emitting device package and method of fabricating thereof
KR101371545B1 (en) * 2012-07-30 2014-03-07 주식회사 세미콘라이트 Semiconductor light emimitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256769A (en) * 2011-06-10 2012-12-27 Fuji Mach Mfg Co Ltd Semiconductor device and manufacturing the same

Also Published As

Publication number Publication date
KR20160048258A (en) 2016-05-04

Similar Documents

Publication Publication Date Title
US10763415B2 (en) Method for manufacturing semiconductor light-emitting device
KR20160083279A (en) Semiconductor light emitting device and method of manufacturing the same
KR101638124B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101638125B1 (en) Semiconductor light emitting device and method of manufacturing the same
TWI590495B (en) Phosphor separated from led by transparent spacer
KR101741733B1 (en) Method of manufacturing semiconductor light emitting device
KR101626904B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101609764B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101778143B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR20160031634A (en) Method of manufacturing semiconductor light emitting device
US9502317B2 (en) Method for manufacturing light emitting device
KR20160039599A (en) Method of manufacturing semiconductor light emitting device
KR20160082953A (en) Semiconductor light emitting device and method of manufacturing the same
KR101755537B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101609766B1 (en) Method of testing semiconductor light emitting device
KR20160052816A (en) Semiconductor light emitting device and method of manufacturing the same
KR20160127342A (en) Semiconductor light emitting device and method of manufacturing the same
KR101928314B1 (en) Semiconductor light emitting device chip and semiconductor light emitting device by using the same
KR101877743B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101835631B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101877237B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101465708B1 (en) Method of manufacturing a semiconductor device structure
KR101663128B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101743087B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101808038B1 (en) Semiconductor light emitting device and method of manufacturing the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
A107 Divisional application of patent
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant