KR101626904B1 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Semiconductor light emitting device and method of manufacturing the same Download PDF

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Publication number
KR101626904B1
KR101626904B1 KR1020140128481A KR20140128481A KR101626904B1 KR 101626904 B1 KR101626904 B1 KR 101626904B1 KR 1020140128481 A KR1020140128481 A KR 1020140128481A KR 20140128481 A KR20140128481 A KR 20140128481A KR 101626904 B1 KR101626904 B1 KR 101626904B1
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KR
South Korea
Prior art keywords
light emitting
semiconductor light
dam
base
emitting chip
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KR1020140128481A
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Korean (ko)
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KR20160036743A (en
Inventor
전수근
백승호
정동소
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020140128481A priority Critical patent/KR101626904B1/en
Priority to US15/510,585 priority patent/US10411176B2/en
Priority to CN201580048716.1A priority patent/CN106688115B/en
Priority to PCT/KR2015/009619 priority patent/WO2016039593A1/en
Publication of KR20160036743A publication Critical patent/KR20160036743A/en
Application granted granted Critical
Publication of KR101626904B1 publication Critical patent/KR101626904B1/en
Priority to US16/519,546 priority patent/US10930832B2/en
Priority to US16/519,467 priority patent/US10763415B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)

Abstract

According to the present invention, there is provided a method of manufacturing a semiconductor light emitting device, comprising the steps of: providing a semiconductor light emitting chip on a base exposed by a dam and an opening formed on a base; Providing a semiconductor light emitting chip on a base exposed by a dam and an opening; Supplying an encapsulant to the opening to cover the semiconductor light emitting chip; And separating the semiconductor light emitting device into a semiconductor light emitting device including a semiconductor light emitting chip, a sealing material, and a cut dam.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device having improved bonding strength to the outside and a manufacturing method thereof.

As the semiconductor light emitting element, a Group III nitride semiconductor light emitting element is exemplified. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

BACKGROUND ART Semiconductor light emitting devices are manufactured through an EPI process, a chip forming process, and a package process. In each manufacturing process, defective products are generated due to various unexpected causes. If defects generated in each manufacturing process can not be appropriately removed, defective products are unnecessarily subjected to a subsequent process, and production efficiency is lowered.

FIG. 1 is a view for explaining an example of a process of producing a semiconductor light emitting chip from a wafer, in which a raw wafer is produced by using a raw material such as silicon or sapphire and a plurality of The semiconductor layer is grown. Thereafter, an epitaxial wafer 1 having a semiconductor light emitting chip formed thereon is formed by an electrode forming process, an etching process, a protective film forming process and the like (see FIG. 1A). Thereafter, as shown in FIGS. 1B and 1C, Is attached to the dicing tape 3 and separated into individual semiconductor light emitting chips 101 by a scribing process as shown in Fig. 1D. Subsequently, inspection and grading are carried out and the fixation layer 13 (for example, tape) is applied as required in a post process such as a packaging process, using a sorter 5 as shown in Fig. 1E, The semiconductor light emitting chip 101 may be exposed and then subjected to a visual inspection.

FIG. 2 is a view for explaining an example of a process of manufacturing a semiconductor light emitting device package using a semiconductor light emitting chip. In the package process, for example, a die bonder 501, The semiconductor light emitting chip 101 is die-bonded to the lead frame 4 and a semiconductor light emitting device package is produced as shown in FIG. 2B through wire bonding, fluorescent material encapsulation, characteristic testing, trimming, taping and the like. Alternatively, the semiconductor light emitting device package may be manufactured by mounting the semiconductor light emitting chip 101 on a submount on which external electrodes such as a PCB are formed by an SMD method. The process of attaching the semiconductor light emitting chip 101 on a lead frame (e.g., 4), a PCB, or a circuit tape is referred to as die bonding, and the equipment to be used is referred to as a die bonder (e.g., 501). Since the size of the semiconductor light emitting chip 101 is becoming smaller and smaller, the accuracy of the bonding position and the angle of the semiconductor light emitting chip 101 is more demanded.

FIG. 3 is a view for explaining an example of a semiconductor light emitting chip arranged on a tape by a projector. As illustrated in FIG. 1F, the semiconductor light emitting chip 101 has a structure Are provided. The shooter 5 arranges the semiconductor light emitting chips 101 in rows and columns indicated at some intervals based on the semiconductor light emitting chips 101 initially arranged on the flat tape 13. [ A case 15 in which the angle of the semiconductor light emitting chip 101 is slightly different may occur in the course of the arrangement and as the subject 5 performs a high speed operation, The place 14 may also occur. Otherwise, the semiconductor light emitting chip 16, which is defective as a result of the inspection, is pulled out and an empty space is generated. If the operation of the shooter 5 is slowed down to reduce such a problem, the process time increases.

If the accuracy of row and column arrangement by the shooter 5 is insufficient, the quality of the product may be greatly affected by the post-processing method. For example, in the case where the semiconductor light emitting chip 101 is bonded to the lead frame 4 with the die bonder 501, the die bonder 501 has a shape of the electrode of the semiconductor light emitting chip 101 bonded to the tape 13 And recognizes the shape of the lead frame 4, and can correct the positions, angles, and the like to be bonded. Therefore, the arrangement of the semiconductor light emitting chips 101 by the shooter 5 does not significantly affect the packaging process unless it is badly bad. However, in the case where the semiconductor light emitting chip 101 arranged on the tape 13 as a post-process is directly used in the process, or is rearranged to a required specification by using the projector 5, There is a problem that the process efficiency is lowered because the semiconductor light emitting device 101 needs to be corrected again and a process of filling the void 14 of the semiconductor light emitting chip 101 must be additionally performed.

4 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044. The semiconductor light emitting device includes a substrate 1200, an LED, and an encapsulant 1000. The LED is formed in the form of a flip chip on a growth substrate 100, a growth substrate 100, a first semiconductor layer 300 having a first conductivity, an active layer 300 for generating light through recombination of electrons and holes, A first semiconductor layer 400 having a first conductivity and a second semiconductor layer 500 having a second conductivity different from the first conductivity. A metal reflection film 950 is formed on the second semiconductor layer 500 to reflect light toward the growth substrate 100 and an electrode 800 is formed on the first semiconductor layer 300 exposed and etched. The encapsulant 1000 contains a phosphor and is formed so as to surround the growth substrate 100 and the semiconductor layers 300, 400 and 500. The LEDs are bonded to the substrate 1200 having the electrical contacts 820 and 960 by conductive adhesives 830 and 970.

FIG. 5 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044. First, a plurality of LEDs 2A-2F are arranged on a substrate 1200. The substrate 1200 is made of silicon, and the growth substrate 100 (see FIG. 4) of each LED is made of sapphire or silicon carbide. The substrate 1200 is provided with electrical contacts 820 and 960 (see FIG. 4), and each LED is bonded to the electrical contacts 820 and 960. After the stencil 6 having openings 8A-8F corresponding to the respective LEDs is formed on the substrate 1200, a sealing material 1000 (see FIG. 4) is formed to expose a part of the electrical contacts 820 and 960 do. After the stencil 6 is removed and the curing process is performed, the substrate 1200 is sawed or scribed and separated into individual semiconductor light emitting devices.

6 is a view for explaining a problem when the sealing material is formed on a plurality of semiconductor light emitting chips at one time, in which a guide 21 is arranged at the edge of the tape 13 and the substrate, The semiconductor light emitting chip 101 can be covered and the sealing material 17 can be flattened by pushing. As described above, on the tape 13, there may be a space 14 where the semiconductor light emitting chip 101 is empty. In this case, the encapsulant 17 may slightly hang down from the space 14 where the semiconductor light emitting chip 101 is located. In this case, the encapsulant 17 around the semiconductor light emitting chip 101 It has a bad influence. As a result, there arises a problem that the color coordinate and the optical characteristic of the semiconductor light emitting element (the combination of the sealing material 17 and the semiconductor light emitting chip 101) affected are different from the designed values.

On the other hand, due to such a problem, a process of repositioning the semiconductor light emitting chip 101 in the empty space 14 on the tape 13 is added, which increases the number of processes and reduces the process efficiency. On the other hand, a process of forming the sealing material 17 without removing the defective semiconductor light emitting chip 16 may be performed in order to avoid the influence on the state of the sealing material 17. However, in this case, the defective semiconductor light emitting element must be removed by the appearance inspection, so that the process water is further added, and the material is wasted.

On the other hand, after the sealing material 17 is formed, the sealing material 17 can be cut with the cutter 31 and separated into individual semiconductor light emitting devices. In this case, there is a problem that the light extraction efficiency is lowered as the cut surface of the sealing material 17 by the cutter 31 is cut by the cutter 31. [ Further, if the arrangement of the semiconductor light emitting chips 101 on the tape 13 is slightly distorted, there is a problem that defects occur in many semiconductor light emitting devices at the time of cutting by the cutter 31. [

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features). According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, And a plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light by recombination of electrons and holes, and an electrode for transmitting current to the plurality of semiconductor layers An encapsulating material surrounding the semiconductor light emitting chip so that the chip and the electrode are exposed; And a metal bonding portion which is fixed to the encapsulating material so as to be spaced apart from the semiconductor light emitting chip, the metal bonding portion having a bottom surface exposed in a direction in which the electrode is exposed, wherein the exposed surface of the electrode and the bottom surface of the bonding portion are contacted with the outside, The surface of the encapsulant around the electrode, and the lower surface of the junction are connected as a surface.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: forming a semiconductor light emitting chip on a base exposed through a dam and an opening formed on the base; the method comprising the steps of: providing a semiconductor light emitting chip on a base exposed to a dam and an opening formed with a cutting groove in an opening perimeter dam; Supplying an encapsulant to the opening to cover the semiconductor light emitting chip; And dividing the semiconductor light emitting device into a semiconductor light emitting device including a semiconductor light emitting chip, a sealing material, and a cut dam.

This will be described later in the Specification for Implementation of the Invention.

1 is a view for explaining an example of a process of producing a semiconductor light emitting chip from a wafer,
2 is a view for explaining an example of a process of manufacturing a semiconductor light emitting device package using a semiconductor light emitting chip,
3 is a view for explaining an example of a semiconductor light emitting chip arranged on a tape by a sorter,
4 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
5 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
6 is a view for explaining a problem when a sealing material is formed all over a plurality of semiconductor light emitting chips,
7 to 12 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
13 is a view for explaining examples of the cured form in which the sealing material is provided in the opening in the method of manufacturing the semiconductor light emitting device according to the present disclosure,
14 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure,
15 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
16 and 17 are views showing an example of a method of inspecting a semiconductor light emitting device according to the present disclosure,
18 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
19 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
20 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
21 is a view for explaining another example of a manufacturing method of a semiconductor light emitting device according to the present disclosure,
22 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure,
23 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
24 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure,
25 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure,
26 is a view for explaining still another example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure;
27 is a view for explaining still another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same.

The present disclosure will now be described in detail with reference to the accompanying drawings.

7 to 12 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the method of manufacturing a semiconductor light emitting device, as shown in FIG. 7, And a mask 301 having an opening 305 formed therein. 9B, by using the element transferring apparatus 501 which recognizes the shape, the pattern, or the boundary of the mask 301 and corrects the position and the angle at which the element is to be placed, And the semiconductor light emitting chip 101 is placed on the base 201. Next, as shown in Fig. 12, the mask 301 is used as a dam, and the sealing material 170 is supplied to each opening 305. Then, as shown in Fig.

In this example, before placing the semiconductor light emitting chip 101 on the base 201, the mask 301 is placed on the base 201 first. The mask 301 can be recognized as a pattern for correcting the position or angle at which the element transferring apparatus 501 will place the semiconductor light emitting chip 101 and functions as a dam of the sealing material 170. [ Since the mask 301 and the aperture 305 are precisely formed frames with high accuracy in advance, the mask 301 is moved in accordance with an instruction at that time using a shooter (e.g., see 5 in Fig. 2) The alignment accuracy of the semiconductor light emitting chip 101 is higher than when arranging the elements on the base 201 or the flat tape 13 (see FIG. Thus, defects due to alignment inaccuracy are reduced. 9A), when the semiconductor light emitting chip 101 is attached to the tape 13 to provide the semiconductor light emitting chip 101 to the element transferring apparatus 501 (see Fig. 9A) The device 501 recognizes the empty space 14 (see FIG. 9A) of the semiconductor light emitting chip 101 and can transfer the other semiconductor light emitting chip 101, (201). Therefore, the burden is reduced when the semiconductor light emitting chip 101 is provided to the element transferring apparatus 501.

In this example, a flip chip is suitable for the semiconductor light emitting chip 101, but it does not exclude a lateral chip or a vertical chip. As the flip chip element, the semiconductor light emitting chip 101 includes two electrodes 80 and 70 (see Fig. 12) exposed from the sealing material.

Each process will be described in detail below.

As shown in FIG. 8, a mask 301 is provided on the base 201. The base 201 may be a rigid metal or non-metal plate, as shown in FIG. 8A, or may be a flexible film or tape, as shown in FIG. 8B. For example, Al, Cu, Ag, Cu-Al alloy, Cu-Ag alloy, Cu-Au alloy, SUS (stainless steel) and the like can be used as the metal plate, Of course, it can be used. Plastics can be used as non-metallic plates, and various colors and light reflectance can be selected. There is no particular limitation on the film or the tape, and it is preferable that the film or tape has adhesiveness or adhesiveness and has heat resistance. For example, a heat-resistant tape, a blue tape, or the like can be used, and various colors and light reflectance can be selected.

As described above, according to this example, the base 201 on which the semiconductor light emitting chips 101 are arranged can be advantageous even if it is not a semiconductor substrate or another expensive substrate. Further, since the mask 301 serves as a guide for the arrangement of the semiconductor light emitting chips 101, an additional pattern forming step is not required for the base 201. [ In addition, the electrodes 80 and 70 of the semiconductor light emitting chip 101 may be directly contacted with the external electrodes, or the base may be used for electrical conduction, so that the base 201 may be electrically connected to the base 201 by vapor deposition or plating Additional and additional processes such as forming a conductive layer or further forming an electrical contact portion connected to the electrodes 80 and 70 of the semiconductor light emitting chip 101 after the removal of the base 201 are not necessary, There is a very advantageous advantage.

The mask 301 may be a plastic, a metal, or a member plated with a surface, and a plurality of openings 305 are formed. The material of the mask 301 may be exemplified by the materials exemplified by the material of the base, but it is preferable that the material is somewhat rigid to be suitable for maintaining the shape of the mask 301 and the opening 305, . ≪ / RTI > In particular, as described later, in view of the device transfer apparatus recognizing the pattern of the mask 301, it is preferable that at least one of the material, the color, and the light reflectance is selected for the mask 301 and the base 201 differently.

In this example, the base 201 and the mask 301 are pressed by an external force and brought into contact with each other. For example, as shown in Fig. 8A, the clamp 401 can be used to bring the base 201 and the mask 301 into contact. As described above, according to this example, there is a convenient advantage in that the method for contacting the base 201 with the mask 301 is simple and the mask 301 can be removed from the base 201 by loosening the clamp 401 . An embodiment in which an adhesive material is interposed between the base 201 and the mask 301 is of course possible. For example, the adhesive material may be selected from a variety of conductive pastes, insulating pastes, polymeric adhesives, and the like, and is not particularly limited. When the material which loses the adhesive force in any temperature range is used, separation can be facilitated in the temperature range when the base 201 and the mask 301 are separated.

The plurality of openings 305 formed in the mask 301 are, for example, arranged in a plurality of rows and columns. The upper surface of the base 201 is exposed by the opening 305. It goes without saying that the number and arrangement of the openings 305 can be appropriately changed as necessary. The opening 305 may follow the shape of the semiconductor light emitting chip 101, but may have a shape different from that of the semiconductor light emitting chip 101.

9 is a diagram for explaining an example of the process of placing the semiconductor light emitting chip 101 on the base 201 exposed in the opening 305. The element transferring apparatus 501 includes a fixing portion 13 The semiconductor light emitting chips 101 are picked up and placed on the base 201 exposed by the openings 305 of the mask 301. [ A process of providing a plurality of semiconductor light emitting chips 101 on the tape 13 by using a device array device (e.g., a sorter) may be preceded by the process shown in Fig. 3. For example, Can be referenced. The semiconductor light emitting chip 101 is detached from the tape 13 when the pin or the rod is pushed against the semiconductor light emitting chip 101 under the tape 13 as shown in Fig. The chip 101 can be electrically adsorbed or vacuum adsorbed. 9B, the element transferring apparatus 501 moves over the base 201 to place the semiconductor light emitting chips 101 in the respective openings 305. As shown in Fig. The semiconductor light emitting chip 101 is placed such that the two electrodes 80 and 70 face the upper surface of the base 201 so that the two electrodes 80 and 70 are covered by the sealant 170 described later Do not. As an example of the device transferring apparatus 501, a device capable of recognizing a pattern or a shape and correcting the position to be transferred or the angle of the object, similar to the die bonder, may be used irrespective of the name.

10 is a diagram for explaining examples of a semiconductor light emitting chip. In this example, a semiconductor light emitting chip 101 is a flip chip element, which includes a growth substrate 10, a plurality of semiconductor layers 30, 40, A light reflection layer (R), and two electrodes (80, 70). As an example of the III-nitride semiconductor light emitting device, sapphire, SiC, Si, GaN or the like is mainly used as the growth substrate 10, and the growth substrate 10 may be finally removed. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) A second semiconductor layer 50 (e.g., Mg-doped GaN) having another second conductivity, and a second semiconductor layer 50 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes. An active layer 40 (e.g., InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. The first electrode (80) is in electrical communication with the first semiconductor layer (30) to supply electrons. The second electrode 70 is in electrical communication with the second semiconductor layer 50 to supply holes.

10A, a light reflection layer R is interposed between the second semiconductor layer 50 and the electrodes 70 and 80. The light reflection layer R is formed of an insulating layer such as SiO 2 , a DBR (Distributed Bragg Reflector) ) Or an Omni-Directional Reflector (ODR). Alternatively, as shown in FIG. 10B, a metal reflective layer R may be provided on the second semiconductor layer 50, an electrode 70 may be provided on the metal reflective layer R, and a first semiconductor layer 50 and the other electrode 80 can communicate with each other. The above-described element transfer apparatus 501 can recognize the shape or the pattern of such electrodes 70 and 80. [

11 is a view for explaining an example of correcting an angle and a position by recognizing a shape or a pattern of a mask, in which the tape 13 is moved in the process of arranging at high speed by the shooter 5 (see Fig. 2) There may be a space 14 (see FIG. 3) where the semiconductor light emitting chip 101 is located, and there may be a semiconductor light emitting chip 16 (see FIG. 3) arranged so as to be slightly angled. The element transferring apparatus 501 can recognize the vacant space 14 and pick up the semiconductor light emitting chip 101 at the next position, as shown in Fig. 9A. The element transferring apparatus 501 can recognize the pattern (e.g., electrode separation line) of the electrodes 80 and 70 of the semiconductor light emitting chip 101 and correct the angle when picking up the semiconductor light emitting chip 101. [ 11, the device 301 recognizes the shape of the mask 301 and corrects the position and the angle so that the semiconductor light emitting chip 101 is accurately placed on the base 201 exposed to the opening 305 . For this purpose, the element transferring apparatus 501 can use a camera, an optical sensor, or the like. For example, the base 201 and the mask 301 may be made of a material or a color or may be processed so as to have a difference in light reflectance, and the element transferring apparatus 501 may include a mask 301 and a base 201, The difference in light reflectance, or the difference in reflected light, or the shape of the opening 305 can be recognized. The element transferring apparatus 501 can recognize only a part of the mask 305 without recognizing the opening 305 as a whole and the element transferring apparatus 501 can recognize the distance or coordinate indicated from at least one of the mask 301 surface, The semiconductor light emitting chip 101 can be placed at a position on the base 201 corresponding to the semiconductor light emitting chip 101. In addition, various methods of determining the coordinates of the semiconductor light emitting chip 101 based on the patterns of the mask 301 and the openings 305 and on the basis of the patterns may be designed. In this example, there is no special pattern on the base 201, and the mask 301 and the opening 305 are used as a reference for determining the coordinate of the semiconductor light emitting chip 101. [

Therefore, compared with the case where elements are arranged at predetermined intervals based on the semiconductor light emitting chip 101 initially disposed by using the object 5 on a flat base 201, alignment of the semiconductor light emitting chip 101 : Position and angle) are more accurate.

12A and 12B are diagrams for explaining an example of a method of supplying a sealing material to each opening by using a mask as a dam in the method for manufacturing a semiconductor light emitting device according to the present disclosure. The encapsulant 170 can be supplied every time the encapsulant 305 is supplied. Alternatively, as shown in FIG. 12B, a method of flattening the sealing material 170 by pushing it may be used.

FIG. 13 is a view for explaining examples of a form in which the sealing material is supplied to the opening and cured in the method of manufacturing the semiconductor light emitting device according to the present disclosure, in which the speed, amount, etc. of supplying the sealing material 170 to the dispenser 601 The upper surface of the sealing material 170 may be slightly convex as shown in FIG. 13A. When the encapsulant 170 is formed in this form, the distribution of the light emitted from the semiconductor light emitting chip 101 can be helped to have a desired shape. Further, it is also possible to make the sealing material 170 flat as shown in Fig. 13B or to make the sealing material 170 lower in height than the mask 301 as shown in Fig. 13C, if necessary. It is also possible to provide a wall 303 higher than the mask 301 on the outer side of the mask 301 and to form the sealing material 170 higher than the mask 301 as shown in FIG. 13D.

13E, the mask 301, the encapsulant 170, and the semiconductor light emitting chip 101 are separated from the base 201 as a whole. Here, the mask 301, the sealing material 170, and the combination of the semiconductor light emitting chip 101 may be directly used as an element. On the other hand, when the base 201 and the mask 301 are bonded together by an adhesive or other method, the mask 301, the sealing material 170, the semiconductor light emitting chip 101, and the base 201 are integrally formed as semiconductor elements . Alternatively, the mask 301 may be removed and separated into individual elements, or the mask 301 may be cut into individual elements, or the mask 301 and the base 201 may be cut together and separated into individual elements.

According to the method of manufacturing a semiconductor light emitting device according to this example, the semiconductor light emitting chip 101 can be arranged at a more accurate position and angle by using the mask 301 as a guide pattern of the arrangement of the semiconductor light emitting chips 101. Therefore, the occurrence of defects due to the misalignment of the semiconductor light emitting chips 101 in a post-process, for example, a separation process (e.g., sawing) into individual devices, is reduced.

Further, after the mask 301 is placed on the tape on which the semiconductor light emitting chips 101 are arranged and the sealing material is supplied after the process of filling the empty space in the tape or correcting the angle of the broken semiconductor light emitting chip 101, , The method according to the present example is efficient because the additional step is not necessary.

14A and 14B are diagrams for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. In this example, before the semiconductor light emitting chip 101 is placed on the base 201, The phosphor is conformally coated (e.g., spray-coated) on the surface of the phosphor 101. The phosphor layer 180 is much smaller in volume and thickness than the encapsulant 170, but can be uniformly coated on the semiconductor light emitting chip 101 and the amount of the phosphor can be reduced. For example, the thickness of the phosphor layer 180 is about 30 μm and the thickness of the sealing material 170 is about 100 μm to 200 μm.

Thereafter, a mask 301 is first placed on the base 201, a pattern recognition is performed, and a device transferring apparatus 501 capable of positional and angular correction is used to form a semiconductor The light emitting chip 101 is disposed. Thereafter, as shown in Fig. 14B, the sealing material 170 is supplied to the opening 305 and cured. Here, the sealing material 170 may be made of a transparent material (for example, silicon) so as not to contain the phosphor and to simply seal it for protection. 14C, the base 201 is separated from the mask 301, the sealing material 170, and the semiconductor light emitting chip 101. Then, as shown in Fig. The separation can be accomplished by releasing the clamp 401 when the base 201 is a rigid plate or by ejecting the base 201 when the base 201 is film or tape.

15A and 15B illustrate another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. In this example, a plate having a plurality of conductive parts 231 and 233 as shown in FIG. 15A is used as the base 201 do. The base 201 includes a plurality of conductive portions 231 and 233 and an insulating portion 235 between the plurality of conductive portions 231 and 233. Each of the conductive parts 231 and 233 is exposed upward and downward and is flat. The conductive parts 231 and 233 are paths for electrical conduction and can be heat dissipation paths. The base 201 is repeatedly laminated in such a manner that a plurality of conductive plates (e.g., Al / Cu / Al) are bonded by using an insulating material such as an insulating adhesive (e.g., epoxy) or the like to prepare a laminate. Such a laminate is cut (for example, a wire cutting method) to form a plate-shaped base 201 as shown in Fig. Depending on the method of cutting, the base 201 may be formed as a band or as a plate. The width of the conductive parts 231 and 235 and the width of the insulating part 235 can be adjusted by changing the thickness of the conductive plate and the insulating adhesive.

The phosphor layer 180 is formed on the surface of the semiconductor light emitting chip 101 before the semiconductor light emitting chip 101 is placed on the base 201. [ The mask 301 is first placed on the base 201 and the element transferring device 501 is moved to the position on the base 201 corresponding to the distance indicated from the edge of the mask 301 due to the recognized opening 305, The semiconductor light emitting chip 101 is placed. At this time, it is sufficient to recognize the opening 305 of the mask 301 as a guide for coordinate determination of the semiconductor light emitting chip 101, but the conductive portions 231 and 235 may help coordinate determination together with the mask 301 . For example, the element transferring apparatus 501 can correct the position and the angle so that the electrodes 80 and 70 of the semiconductor light emitting chip 101 come between the edge of the mask 301 and the edges of the conductive portions 231 and 235 , Thereby helping to prevent the electrodes 80 and 70 of the semiconductor light emitting chip 101 from being placed on the insulating portion 235.

The semiconductor light emitting chip 101 is disposed in each opening 305 of the mask 301 by recognizing the opening 305, the conductive portions 231 and 233 and the electrode of the semiconductor light emitting chip 101. Thereafter, as shown in Fig. 15B, the sealing material 170 is supplied to the opening 305 and cured. In this example, the base 201 can be used without being separated from the encapsulant 170 and the semiconductor light emitting chip 101. The base 201 can be cut so that a plurality of semiconductor light emitting chips 101 and the sealing material 170 form an array. Alternatively, the base 201 may be cut so that one semiconductor light emitting chip 101, the sealing material 170, and the base 201 form one semiconductor light emitting device.

16 and 17 are views showing an example of a method for inspecting a semiconductor light emitting device according to the present disclosure. In the method for inspecting a semiconductor light emitting device, as shown in FIG. 16A, A semiconductor light emitting chip 101 formed on each opening 305 and having electrodes 80 and 70 and a semiconductor light emitting chip 101 formed on each opening 305 to expose the electrodes 80 and 70, 101) is prepared. Thereafter, an optical measuring device 701 for receiving light from the semiconductor light emitting chip 101 is provided on the side opposite to the electrodes 80 and 70 side. Next, a current is applied to the electrodes 80 and 70 of the selected semiconductor light emitting chip 101, and light from the semiconductor light emitting chip 101 is measured by the optical measuring device 701.

In the example shown in FIG. 16B, the electrodes 80 and 70 of the semiconductor light emitting chip 101 are integrally joined together with the base 201, the mask 301, the sealing material 170, and the semiconductor light emitting chip 101, And the conductive portions 231 and 233 of the base 201, which are electrically connected to the conductive portions 231 and 233, can be inspected.

In order to accurately measure the light of the semiconductor light emitting device, it is necessary to receive as much light as possible from the semiconductor light emitting device, and to avoid interference with surrounding light, when the combined body of the semiconductor light emitting chip 101 and the sealing member 170 is referred to as a semiconductor light emitting device. It is preferable to measure it. Therefore, it is preferable that not only the light emitted to the opposite side of the electrodes 80 and 70, but also the light intensity meter 701 that emits in the lateral direction of the semiconductor light emitting device receive the light.

The mask 301 around the sealing material 170 reflects a part of the light from the semiconductor light emitting chip 101 to the side of the optical measuring instrument 701 and the mask 301 reflects a part of the light from the neighboring bag Thereby blocking light from entering the ash 170. The light leaked to the electrodes 80 and 70 may be small, and therefore, as shown in FIG. 16A, the optical measurer 705 may be further provided on the electrodes 80 and 70 side for inspection. 16B, the probe 707 contacts the conductive parts 231 and 233 of the base 201, and no light leaks toward the electrodes 80 and 70 due to the base 201. Therefore, the additional optical meter 705 It is unnecessary. Accordingly, even if the individual semiconductor light emitting devices are not inspected by inserting the individual semiconductor light emitting devices into the optical measuring device 701, leaked light is remarkably reduced and measurement can be performed without interference by surrounding phosphors. You can measure the light exactly as you put it. In addition, it is possible to move the optical measuring instrument 701 or inspect the combined body of the mask 301, the encapsulant 170, and the semiconductor light emitting chip 101, thereby speeding up the inspection.

The combination of the mask 301, the encapsulant 170 and the semiconductor light emitting chip 101 is made up of the mask 301, the encapsulant 170 and the semiconductor light emitting chip 101 described in Figs. 7 to 15 Combinations may be used. An integrating sphere may be used as the optical measuring device 701. For example, the integrating sphere 701, 705 is a spherical device having a hollow portion inside and is a device that receives light into the hollow portion and measures its characteristics. The integrating sphere 701 and 705 are formed so that a neck portion of the semiconductor light emitting element is protruded, and a material for uniformly reflecting light can be coated on the inner peripheral surface of the integrating sphere including the neck portion. The type and specific configuration of the integration sphere can be changed as needed. For example, one side of the outer peripheral surface of the integrating sphere 701, 705 may be equipped with an optical property measuring device connected to the hollow portion of the integrating sphere and capable of measuring the characteristics of the light collected in the hollow portion. The optical property measuring device measures the brightness, wavelength, luminous intensity, illuminance, spectral distribution, color temperature, color coordinate, etc. of light emitted from the semiconductor light emitting device, and measures the optical characteristics of the semiconductor light emitting device by measuring at least one of them. do. A spectrometer or photo detector can be used as the optical property measuring device.

As a method different from the present example, a wafer which is diced on the upper surface of a blue tape or a white tape having elasticity and adhesiveness is attached, and the tape is peeled off by a method such as vacuum adsorption There is a conventional method in which inspection is performed by arranging a plurality of semiconductor light emitting chip units on a tape by dividing the wafer by extending the wafer. According to the inspection method according to this example, unlike the above-described conventional method, since the mask 301, the sealing material 170, and the semiconductor light emitting chip 101 integrally form a combined body, The optical measuring instrument 701 can be inspected while being transferred, which is convenient.

Referring to FIG. 17, in the inspection method of the semiconductor light emitting device according to this example, when the semiconductor light emitting device inside the mask 301 and the semiconductor light emitting device at the edge are inspected, Can be removed. For example, a plurality of semiconductor light emitting devices may be attached and inspected on a tape without a mask 301, or the sealing material 170 may be entirely sealed to inspect each semiconductor light emitting device. At this time, in the arrangement of the plurality of semiconductor light emitting elements, a structure for substantially scatting around the semiconductor light emitting element to be measured is uniformly distributed. On the other hand, in the edge semiconductor light emitting device, the scattering of the light differs between the direction in which the semiconductor light emitting device is present and the direction in which there is no semiconductor light emitting device. Consequently, light is measured differently from the inner side and the edge of the tape. However, when the semiconductor light emitting element on the inner side and the edge semiconductor light emitting element are individually inserted into the integrating sphere, the light is measured almost similarly.

According to the inspection method of the semiconductor light emitting device according to this example, since the mask 301 surrounding each semiconductor light emitting element functions as a reflector, there is no difference in conditions between the inside and the edge, and therefore, more accurate optical measurement is possible. The mask 301 may be formed of a metal to function better as a reflector, or it may be considered to coat a material having a high light reflectance.

18 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure. The semiconductor light emitting device includes the semiconductor light emitting chip 101, the sealing material 170, and the metal bonding portion 302. The semiconductor light emitting chip 101 includes electrodes 80 and 70 for transferring electric current to a plurality of semiconductor layers 30, 40 and 50 and a plurality of semiconductor layers 30, 40 and 50. The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, And an active layer 40 interposed between the first semiconductor layer 50 and the second semiconductor layer 50 and generating light by recombination of electrons and holes. The encapsulant 170 surrounds the semiconductor light emitting chip 101 so that the electrodes 80 and 70 are exposed. The metal bonding portion 302 is fixed to the sealing material 170 away from the semiconductor light emitting chip 101 and has a bottom surface 304 exposed in a direction in which the electrodes 80 and 70 are exposed. The exposed surface of the electrodes 80 and 70 and the encapsulant 170 around the electrodes 80 and 70 so that the exposed surface of the electrodes 80 and 70 and the bottom surface 304 of the metal bonding portion 302 come into contact with the outside. And the lower surface 304 of the metal joint portion 302 are connected as a surface. Therefore, the joining force is improved due to the metal bonding portion 302 compared to the case where the electrodes 80 and 70 are joined to the outside only.

The semiconductor light emitting chip 101 may be a flip chip as shown in FIG. 10, and two electrodes 80 and 70 are exposed from the encapsulant 170, respectively. Alternatively, the semiconductor light emitting chip 101 may be applied as long as an electrode such as a vertical chip can be exposed from the sealing material 170, but it is more effective for a flip chip. The semiconductor light emitting chip 101 may include a fluorescent layer 180 that exposes the two electrodes 80 and 70 and surrounds the plurality of semiconductor layers 30 and 40 and 50, The example described in 14a can be applied. The encapsulant 170 surrounds the fluorescent layer 180, and the above-described examples can be used. The encapsulant 170 includes a lower surface 171 on which the two electrodes 80 and 70 are exposed, an upper surface on the opposite side of the two electrodes 80 and 70, and a side surface connecting the lower surface and the upper surface.

As described above, the exposed surface of the electrodes 80 and 70, the lower surface 171 of the sealing material 170 around the electrodes 80 and 70, and the lower surface 304 of the metal bonding portion 302 are connected as a surface 18A, it is preferable that the electrode 80, 70 and the lower surface 304 of the metal bonding portion 302 are smoothly brought into contact with the outer surface or submount, preferably without irregularities, Or, it means smoothly connected. Although the present embodiment does not exclude the case where the lower surface 304 of the metal bonding portion 302 and the lower surface 171 of the sealing material 170 have a slight step difference, The examples shown in Fig. The distance between the exposed surface of the electrodes 80 and 70 and the lower surface 304 of the metal bonding portion 302 is substantially the same as the distance between the exposed surface of the electrode 80 and the metal bonding portion 302, The bottom surface 171 of the sealing material 170 and the bottom surface 304 of the metal bonding portion 302 are preferably flat. In this case, the exposed surface of the electrodes 80 and 70, the reflective layer around the electrodes 80 and 70, and the like may be formed on the lower surface 171 of the encapsulant 170. In this case, The surface of the layer and the lower surface 304 of the metal joint 302 will be continuous as a surface.

The semiconductor light emitting device shown in Fig. 18A may be mounted on a submount 1500 such as a PCB, as shown in Fig. 18B. At this time, the two electrodes 80 and 70 and the metal bonding portion 302 of the semiconductor light emitting chip 101 may be bonded to the metal pads 1511, 1513, 1515, and 1517 formed on the surface of the submount 1500, respectively . In the present disclosure, it is not excluded that a nonmetal joint (e.g., plastic) is used in place of the metal joint 302. However, when the submount 1500 or the metal pads 1511, 1513, 1515, It is preferable to use the metal bonding portion 302 to improve the bonding strength. 18B, an adhesive may be interposed between the metal pads 1511, 1513, 1515, and 1517 of the submount 1500 and the two electrodes 80 and 70 and the metal bonding portion 302 of the semiconductor light emitting chip 101 , A method of bonding without an adhesive may be used.

On the other hand, as shown in Fig. 18C, the embodiment in which the plate 201 is bonded to the electrodes 80 and 70 is also possible. The plate 201 includes a first conductive portion 231 and a second conductive portion 233 and an insulating portion 235 interposed between the first conductive portion 231 and the second conductive portion 233, The first conductive portion 231 and the second conductive portion 233 are repeatedly formed and the first conductive portion 231 and the second conductive portion 233 are exposed upward and downward, And a heat dissipation path. The two electrodes 80 and 70 of the semiconductor light emitting chip 101 are bonded to the first conductive portion 231 and the second conductive portion 233 respectively and the two electrodes 80 and 70 Preferably corresponds approximately to the insulating portion 235. [ Meanwhile, the metal bonding part 302 forms a metal-to-metal bond to the other first conductive part 231 and the second conductive part 233. Alternatively, it is of course possible that the metal joint 302 is joined to the other insulator 235. Such a combination of the semiconductor light emitting chip 101, the sealing material 170, the metal bonding portion 302 and the plate 201 can be regarded as a semiconductor light emitting element.

The metal bonding portion 302 may have an annular shape formed around the side surface of the sealing material 170. In this case, the first and second conductive parts 231 and 231, which are respectively bonded to the two electrodes 80 and 70 by the metal bonding part 302 shown in FIG. 18C so that the two electrodes 80 and 70 do not generate a hump, The length and / or the width of the conductive portion 233 may be adjusted so as not to contact the metal bonding portion 302 or the metal bonding portion 302 may be bonded to the plate 201 using an insulating adhesive. As another example, the metal bonding portion 302 may include a first metal portion fixed to a side surface of the sealing material 170, and a second metal portion separated from the first metal portion and fixed to a side surface of the sealing material 170 Examples are possible.

FIG. 19 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure, and is an example of the method for manufacturing the semiconductor light emitting device shown in FIG. 18A. First, a semiconductor light emitting chip 101 is provided on a base 201 exposed by a dam 301 and an opening 305 in which an opening 305 is formed on a base 201. 19A, after a dam 301 having an opening 305 formed therein is first provided, a semiconductor 201 is formed on a base 201 exposed through an opening 305, as shown in FIG. 19B, The light emitting chip 101 is placed. Alternatively, a method of disposing the semiconductor light emitting chip 101 on the base 201 and providing the dam 301 is of course possible.

Subsequently, as shown in Fig. 19B, the sealing material 170 is supplied to the opening 305. Fig. Next, preferably cut along the center at the thickness of the dam. As a cutting method, a method of cutting the whole from the upper surface to the lower surface of the dam 301 with the cutter 31 can be used. Alternatively, a method of scribing and breaking the remaining portion after cutting or scribing the dam 301 to a predetermined depth with the cutter 31 or another scribing device (such as a laser scribing device) may be used . In this example, the sealing material 170 is not sawed, so that the sealing material 170 is scraped by the cutter 31, and the light extraction efficiency is prevented from being lowered. At this time, the base 201 may be cut together with the dam 301, or the base 201 may be cut off by the cutter 31 only to a part of the base 201, and then the base 201 may be cut out. 19C, a semiconductor light emitting device having the semiconductor light emitting chip 101, the sealing material 170, and the cut dam 302 is manufactured. Here, the dam 301 may be made of a metal, a nonmetal, or a metal-plated material on the surface. When the metal is used, the dam 302 is the metal joint 302 described in Fig.

FIG. 20 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure, and is an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 18C.

First, a semiconductor light emitting chip 101 is provided on a base 201 exposed by a dam 301 and an opening 305 in which an opening 305 is formed on a base 201. 20A, after a dam 301 having an opening 305 formed therein is first provided, a semiconductor 201 is formed on a base 201 exposed by an opening 305, as shown in FIG. 20B, The light emitting chip 101 is placed. Alternatively, a method of disposing the semiconductor light emitting chip 101 on the base 201 and providing the dam 301 is of course possible.

The base 201 includes a first conductive portion 231, a second conductive portion 233, and an insulating portion 235 interposed therebetween. The two electrodes 80 and 70 of the semiconductor light emitting chip 101 are bonded to the first conductive portion 231 and the second conductive portion 233, respectively. In this case, when the dam 301 is made of metal, the length and width of the first and second conductive parts 231 and 233, to which the two electrodes 80 and 70 are bonded, respectively, It is preferable not to contact the dam 301. Alternatively, an insulating adhesive may be interposed between the first conductive portion 231 and the second conductive portion 233 to which the metal dam 301 and the two electrodes 80 and 70 are bonded, respectively. Alternatively, when the dam 301 is made of a non-metallic material, the first conductive portion 231 and the second conductive portion 233 to which the two electrodes 80 and 70 are bonded may contact the dam 301.

Subsequently, as shown in Fig. 20B, the sealing material 170 is supplied to the opening 305. Fig. Next, the dam 301 is cut. At this time, the base 201 is cut together with the dam 301. As a cutting method, a method of cutting the whole from the upper surface of the dam 301 to the lower surface of the base 201 with the cutter 31 can be used. Alternatively, a scribing and breaking method may be used in which the cutter 31 or another scribing device cuts or scribes a portion of the dam 301 and the base 201 and then brakes the remaining portion. 20C, a semiconductor light emitting device having a semiconductor light emitting chip 101, a sealing material 170, a metal bonding portion 302 (a cut dam), and a base 201 is manufactured.

Fig. 21 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. As shown in Fig. 21A, an adhesive or an adhesive tape (e.g., blue tape) And a mask 301 (dam) described in Figs. 7 to 17 is provided on a base 201 such as a metal plate, and then the base 301 exposed by the plurality of openings 305 using the above- 201, respectively. It is of course possible to place the semiconductor light emitting chip 101 on the base 201 first and then to supply the sealing material 170 with the mask 301. However, 301 may be provided first.

The encapsulant 170 is then dispensed or pushed out into each opening 305 and cured. Next, the inspection process described with reference to FIGS. 16 and 17 can be performed on the bonded body of the semiconductor light emitting chip 101, the encapsulant 170, and the mask 301 by removing the base 201. FIG. Thereafter, the base 201 is attached to the coupling body again, or they are brought into contact with each other using a clamp. Alternatively, the assembly can be attached onto a member such as a dicing tape. Subsequently, as shown in Fig. 21A, the mask 301 is cut. As the cutting method, the method described in Fig. 19 can be used. If a metal mask is used, the cut mask may be a metal bond 302, as shown in Fig. 21B. At this time, the base 201 may also be cut together. However, after the base 201 is completely cut and the mask 301 is completely cut so as to be separated into individual elements, the base 201 is cut off And separated into individual semiconductor light emitting devices. At this time, a tape may be further adhered to the opposite side of the base 201 so that the individual semiconductor light emitting elements are not scattered.

21C, the base 301 is first removed from the combination of the semiconductor light emitting chip 101, the sealing material 170, and the mask 301, and then the mask 301 is removed, It is also possible to cut. The base 201 can be removed and a member such as a UV-tape can be cut after attaching the member to the combination of the semiconductor light emitting chip 101, the sealing material 170, and the mask 301. Even after the mask 301 is cut, the semiconductor light emitting elements are not scattered due to the UV-tape, so that it is possible to prevent difficulties in sorting and packaging steps. In addition, since the adhesive force disappears after the ultraviolet (UV) irradiation of the UV-tape, each semiconductor light-emitting device can be easily separated from the UV-tape.

22A and 22B are diagrams for explaining another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure. For example, as shown in FIG. 22A, a first conductive portion 231, an insulating portion 235, After the second conductive portion 233 is provided on the repeated base 201 with the mask 301 described in Figs. 7 to 17, a plurality of openings 305 (dams) are formed by using the above- The semiconductor light emitting chip 101 is placed on the base 201 which is exposed to the light emitting device 101. [ The encapsulant 170 is then dispensed or pushed out into each opening 305 and cured. 16 and 17 can be performed on the semiconductor light emitting chip 101, the sealing material 170, the mask 301, and the combination of the base 201. [ Thereafter, the mask 301 and the base 201 are wrapped around the opening 305 without attaching the tape 208 under the base 201 or attaching the tape as shown in Fig. 22B, as shown in Fig. . As the method of cutting, the method described in Fig. 20 can be used. When the metal mask 301 is used, the cut mask becomes the metal joint 302. As a result, the individual semiconductor light emitting elements composed of the semiconductor light emitting chip 101, the sealing material 170, the metal bonding portion 302, and the cut base 201 are separated.

23A and 23B are diagrams for explaining still another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same. First, as shown in FIG. 23A, a dam 301 having an opening 305 in a base 201 is provided . In the dam 301, a cutting groove 303 is formed around the opening 305. The cutting groove 303 is preferably formed at a certain depth from the upper surface of the dam 301 and is formed so as to surround the opening 305. The cutting groove 303 may be formed by cutting the die 301 so as to form the grooves 303 for cutting or by extrusion molding. Subsequently, as shown in FIG. 23B, the semiconductor light emitting chip 101 is placed on the base 201 exposed in the opening 305, and the sealing material 170 is supplied. It is of course possible to place the semiconductor light emitting chip 101 on the base 201 and supply the sealing material 170 with the dam 301 thereafter.

Next, the dam 301 is cut along the cutting groove 303. A method of breaking the dam 301 along the cutting groove 303 or a method of cutting the dam 301 by the cutter 31 entering the groove for cutting 303, A method of scribing and breaking the remaining portion after cutting or scribing a portion of the dam 301 of the cutting groove 303 with a predetermined depth by a crying device may be used.

In this example, when the breaking method is included in the method of cutting the dam 301, since the cutting grooves 303 are formed at precise intervals in advance and cut along the cut groove 303, . Further, when cutting the entire height or thickness from the lower surface to the upper surface of the dam 301, stress or stress due to external force is generated in the process of cutting so that there is a risk of damage to the device. However, Or the stress is reduced, thereby reducing the risk of damage or breakage. In addition, the time for braking is shortened. As a result, the efficiency of the cutting process is improved and the defects are reduced

For example, the height of the remaining dam in the cutting groove 303 may be approximately 200 占 퐉 or less, but the depth of the cutting groove 303 or the groove for cutting 303 may, of course, The height of the remaining dam of the part can also vary. The size of the groove for cutting is not particularly limited and may be changed as the shape and size of the semiconductor light emitting device, the dam 301, and the like are changed. The base 201 may be cut off or the base 201 may be first removed and cut. When the cutter 31 is included in the cutting method, the cutting time is shortened due to the cutting groove 303, the cutting groove 303 can be a reference for the alignment of the cutter 31, It is also possible to guide the cutter 31 at a predetermined position. Thus, the efficiency of the cutting process is improved and the defects are reduced.

Next, the base 201 is removed and separated into a semiconductor light emitting device composed of the semiconductor light emitting chip 101, the sealing material 170, and the cut dam 302 as shown in Fig. 23C. Here, when the metal dam 301 is used, the cut dam 302 becomes the metal joint 302 described in Fig. Due to the cutting groove 303, the metal bonding portion 302 is thicker than the electrodes 80 and 70 on the side opposite to the electrodes 80 and 70. Therefore, it is possible to secure the area of the lower surface 304 of the metal joint portion 302 and to improve bonding strength.

24A and 24B are diagrams for explaining another example of the manufacturing method of a semiconductor light emitting device according to the present disclosure. First, as shown in FIG. 24A, a dam 301 having an opening 305 formed on a base 201, The semiconductor light emitting chip 101 is provided on the base 201 exposed to the light emitting layer 305. The base 201 includes a first conductive portion 231, a second conductive portion 233, and an insulating portion 235 interposed therebetween. In the dam 301, a cutting groove 303 is formed around the opening 305, preferably in a ring shape around the opening 305. Thereafter, the sealing material 170 is supplied to the opening 305 so as to cover the semiconductor light emitting chip 101. It is of course possible to first place the semiconductor light emitting chip 101 on the base 201 and supply the sealing material 170 with the dam 301 thereafter.

Next, the dam 301 and the base 201 are cut together along the cut groove 303 to form the semiconductor light emitting chip 101, the sealing material 170, the cut dam 302, And a base 201 which is a light emitting diode. As the method of cutting, the method described in Fig. 23 can be used. The dam 301 and the base 201 may be cut together along the cutting groove 303 by using the cutter 31. [ Alternatively, a method of breaking the remaining portion after cutting or scribing with the cutter 31 or another scraping device from the dam 301 of the portion of the cutting groove 303 to a portion of the base 201 is of course possible . Alternatively, a method of breaking along the cutting groove 303 is also possible. When the metal dam 301 is used, the cut dam 302 becomes the metal joint 302 described in Fig. The metal bonding portion 302 may be bonded to the conductive portions 231 and 233 of the base or may be bonded to the insulating portion 235.

25A and 25B are views for explaining another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure. First, as shown in FIG. 25A, an adhesive or adhesive tape (e.g., blue tape), a plastic plate, And a mask 301 (dam) described in Figs. 7 to 17 is provided on a base 201 such as a mask. A cut groove 303 is formed in the mask 301 between the opening 305 and the opening 305. The cutting groove 303 is preferably formed in an annular shape so as to surround the opening 305.

Thereafter, the semiconductor light emitting chips 101 are placed on the base 201 exposed to the plurality of openings 305 by using the above-described element transfer apparatus 501 described above. It is of course possible to place the semiconductor light emitting chip 101 on the base 201 first and then to supply the sealing material 170 with the mask 301. However, 301 may be provided first.

Next, encapsulant 170 is dispensed or pushed in each opening 305 and cured. Subsequently, the inspection process described in Figs. 16 and 17 can be performed on the semiconductor light emitting chip 101, the encapsulant 170, the mask 301, and the assembly comprising the base 201. Fig.

Thereafter, as shown in Fig. 25B, the mask 301 is cut along the cut groove 303. Then, as shown in Fig. When separating the base 201, the method described in Fig. 23 can be used as a cutting method. Thus, a semiconductor light emitting device including the semiconductor light emitting chip 101, the sealing material 170, and the metal bonding portion 302 (cut mask) is manufactured. When the base 201 is a plate in which the first conductive portion 231, the insulating portion 235, and the second conductive portion 233 are continuous, for example, when the base 201 is a part of the semiconductor light emitting device, The mask 301 and the base 201 are cut together, and the method described in Fig. 24 can be used as a method of cutting. Thereby, a semiconductor light emitting device including the semiconductor light emitting chip 101, the sealing material 170, the metal bonding portion 302 (cut mask), and the cut base 201 is manufactured.

FIG. 26 is a view for explaining still another example of the semiconductor light emitting device according to the present invention and the method for manufacturing the same, wherein the shape of the semiconductor light emitting device is formed according to the shape of the opening 301 of the dam 301 or the mask 301 do. The opening 305 of the mask 301 may have a shape with a slope or a trapezoidal shape on a sectional view (see Fig. 26A), or a concave or convex curved surface (see Figs. 26C and 26D). Accordingly, the metal bonding portion 302 in contact with the sealing material 170 also has an inclined surface, a convex surface, or a concave surface. Accordingly, the sealing material 170 can be formed into a lens shape according to the required specifications, and can contribute to obtaining a desired light distribution. 26B, after the guide wall 311 is provided outside the mask 301 and the sealing material 170 is formed higher than the mask 301, a cutting groove 303 formed in the mask 301 is formed The mask 301 and the base 201 are cut together.

27 is a view for explaining still another example of a semiconductor light emitting device according to the present disclosure and a method of manufacturing the same, wherein the shape of the semiconductor light emitting device is formed in accordance with the shape of the opening 305 of the mask 301. Fig. The opening 305 of the mask 301 can be changed to a polygonal shape such as a quadrangle (see FIG. 27A), a triangle (see FIG. 27B), a circular shape (not shown), an elliptical shape (not shown)

27A, passages 331 are formed in the mask 301 between the openings 305 so that the openings 305 communicate with each other and the sealant 170 fills the openings 305 and the passages 331 do. When the mask 301 is cut along the cut groove 303, the semiconductor light emitting device having the metal bonding portions 302a and 302b is formed. At this time, due to the channel 331, The first metal part 302a and the second metal part 302b may be separated from each other and fixed to the sealing material 170, as shown in FIG. 27A. The metal bonding portions 302a and 302b may be in contact with different conductive portions 231 and 233 of the plate 201 shown in Fig. 18C, respectively. The first metal portion 302a and the second metal portion 302b may be in contact with the semiconductor light- The two electrodes 80 and 70 of the first electrode 101 do not contact the first conductive portion 231 and the second conductive portion 233 which are in contact with each other at the same time, 27B, the height of the metal bonding portion 302 is lower than the height of the sealing material 170, so that the side surface of the sealing material 170 is partially exposed.

Various embodiments of the present disclosure will be described below.

(1) A method of manufacturing a semiconductor light emitting device, comprising the steps of: providing a semiconductor light emitting chip on a base exposed through a dam and an opening with an opening formed on the base; Providing a semiconductor light emitting chip on a base exposed by a dam and an opening; Supplying an encapsulant to the opening to cover the semiconductor light emitting chip; And dividing the semiconductor light emitting device into a semiconductor light emitting device including a semiconductor light emitting chip, a sealing material, and a cut dam.

(2) In the step of providing the dam and the semiconductor light emitting chip on the base, the semiconductor light emitting chip is a flip chip having two electrodes, and the semiconductor light emitting chip has two electrodes facing the base, And the two electrodes are not covered by the second electrode.

(3) In the step of providing the dam and the semiconductor light emitting chip on the base, a plurality of openings are formed in the dam, and a cutting groove is formed on the upper surface of the dam between the opening and the opening.

(4) In the step of separating into the semiconductor light emitting device, cutting along the groove for cutting is performed by sawing and scribing the dam; And bending along the cutting groove; And at least one of the first electrode and the second electrode.

(5) separating the semiconductor light emitting device into the semiconductor light emitting device includes: cutting the dam around the opening along the groove for cutting; And separating the semiconductor light emitting device from the base.

(6) In the step of separating the semiconductor light emitting device into the semiconductor light emitting device, the dam around the opening is cut along the cut groove, and the base is also cut so that the semiconductor light emitting chip, the sealing material, And the second electrode is separated into a first electrode and a second electrode.

(7) separating the semiconductor light emitting device into a semiconductor light emitting chip, a sealing material, and a dam; And cutting the dam around the opening along the cut groove with respect to the joined body.

(8) forming a fluorescent layer on the surface of the semiconductor light emitting chip before the step of providing the dam and the semiconductor light emitting chip on the base.

(9) The method for manufacturing a semiconductor light emitting device, wherein the dam is at least a surface metal.

(10) In the step of separating into individual semiconductor light emitting devices, in the semiconductor light emitting device comprising the semiconductor light emitting chip, the sealing material, and the cut dam, the lower surface of the cut dam is exposed in the direction in which the two electrodes are exposed, The exposed surface of the two electrodes, the surface of the sealing material around the two electrodes, and the bottom surface of the cut dam are in contact with each other so that the exposed surface of the electrode and the bottom surface of the cut dam are brought into contact with the outside. ≪ / RTI >

The present disclosure encompasses embodiments in which a plastic joint or a non-metal joint is used instead of a metal joint. When the bonding surface of the submount or the outside is nonmetal, it is preferable that such a plastic bonding portion or a nonmetal bonding portion is used as a bonding between the same materials.

(11) In the step of providing the dam and the semiconductor light emitting chip on the base, the semiconductor light emitting chip is a flip chip having two electrodes, and the semiconductor light emitting chip is provided so that two electrodes face the base, And the base includes: a first conductive portion bonded to one of the two electrodes of the semiconductor light emitting chip; A second conductive portion joined to the other of the two electrodes; And an insulating portion interposed between the first conductive portion and the second conductive portion.

(12) the step of providing the dam and the semiconductor light emitting chip on the base includes the steps of: providing a dam on the base; And placing the semiconductor light emitting chip on the base exposed by each opening by using a device transferring device for recognizing the shape of the dam and correcting the position and the angle at which the semiconductor light emitting chip is to be placed. Gt;

According to the semiconductor light emitting device and the method of manufacturing the same according to the present disclosure, since the metal bonding portion is bonded to the outside such as a submount together with the electrodes, bonding strength is improved and a reliable device is provided.

In addition, it is possible to form a groove for cutting in a dam or a mask to easily cut using braking or a cutter and to shorten the time, and the cutting groove allows the crack to follow the cutting groove when braking, So that the yield is improved.

Further, by using the dam or mask as a dam of the guide pattern and the sealing material of the element transfer device for alignment of the semiconductor light emitting chip, the alignment accuracy of the semiconductor light emitting chip is improved.

This also reduces the occurrence of defects due to the misalignment of the semiconductor light emitting chips in the separation process (e.g., sawing, etc.) into individual devices.

Compared with the method of arranging the mask on the tape on which the semiconductor light emitting chips are arranged and supplying the sealing material after the additional process of filling the space in the tape or correcting the angle of the broken semiconductor light emitting chip, Is efficient because the above-mentioned additional process is unnecessary.

In addition, since the mask reflects light toward the optical measuring instrument, the semiconductor light emitting element can be inspected more accurately and quickly.

In the semiconductor light emitting device manufactured by such a method for manufacturing a semiconductor light emitting device, the electrode does not protrude laterally so that the semiconductor light emitting device has a size substantially along the contour of the metal bonding portion or the sealing material, And / or a semiconductor light emitting device package.

70, 80: electrode 101: semiconductor light emitting chip 201: base
301: dam, mask 302: metal bonding portion 303: cutting groove
305: opening 170: sealing material 180: fluorescent layer
501: Device transferring device 701: Optical measuring device

Claims (12)

A method of manufacturing a semiconductor light emitting device,
A method of manufacturing a semiconductor light emitting device, the method comprising: providing a semiconductor light emitting chip on a base exposed through a dam and an opening formed on a base, the dam having a cut groove formed in the opening peripheral dam, Providing a light emitting chip;
Supplying an encapsulant to the opening to cover the semiconductor light emitting chip; And
Separating the semiconductor light emitting device into a semiconductor light emitting device including a semiconductor light emitting chip, a sealing material, and a cut dam. The method according to claim 1,
In the step of providing the dam and the semiconductor light emitting chip on the base,
Wherein the semiconductor light emitting chip is a flip chip having two electrodes, wherein the semiconductor light emitting chip is provided so that two electrodes face the base, so that the two electrodes are not covered by the sealing material. ≪ / RTI > The method according to claim 1,
In the step of providing the dam and the semiconductor light emitting chip on the base,
Wherein a plurality of openings are formed in the dam, and a cut groove is formed in the upper surface of the dam between the opening and the opening. The method according to claim 1,
In the step of separating into the semiconductor light emitting element,
The cutting along the cutting groove is a process of sawing and scribing the dam; And
Breaking along the cutting groove; And at least one of the first electrode and the second electrode. The method according to claim 1,
The step of separating into semiconductor light emitting elements comprises:
Cutting the dam around the opening along the groove for cutting; And
And separating the semiconductor light emitting device from the base. The method according to claim 1,
In the step of separating into the semiconductor light emitting element,
Wherein the semiconductor light emitting device is divided into a semiconductor light emitting device including a semiconductor light emitting chip, a sealing material, a cut dam, and a cut base, wherein the dam is cut along the cut groove, Gt; The method according to claim 1,
The step of separating into semiconductor light emitting elements comprises:
A process of separating a semiconductor light emitting chip, an encapsulant, and a dam assembly from a base; And
And cutting the dam around the opening along the cut groove with respect to the joined body. The method according to claim 1,
Before the step of providing the dam and the semiconductor light emitting chip on the base,
And forming a fluorescent layer on the surface of the semiconductor light emitting chip. The method according to claim 1,
Wherein the dam is at least a surface of the metal. The method of claim 2,
In the step of separating into individual semiconductor light emitting elements,
In a semiconductor light emitting device comprising a semiconductor light emitting chip, a sealing material, and a cut dam,
The lower surface of the cut dam is exposed in the direction in which the two electrodes are exposed,
An exposed surface of the two electrodes, a surface of the sealing material around the two electrodes, and a bottom surface of the cut dam are formed so that the exposed surface of the two electrodes and the bottom surface of the cut dam contact with the outside. A method of manufacturing a light emitting device. The method of claim 6,
In the step of providing the dam and the semiconductor light emitting chip on the base,
A semiconductor light emitting chip is a flip chip having two electrodes. In the semiconductor light emitting chip, two electrodes are provided so as to face the base so that the two electrodes are not covered by the sealing material,
The base is:
A first conductive part bonded to one of two electrodes of the semiconductor light emitting chip;
A second conductive portion joined to the other of the two electrodes; And
And an insulating portion interposed between the first conductive portion and the second conductive portion. The method according to claim 1,
The step of providing a dam and a semiconductor light emitting chip on the base includes:
Providing a dam on the base; And
And placing the semiconductor light emitting chip on the base exposed by each opening by using a device transferring device for recognizing the shape of the dam and correcting the position and angle at which the semiconductor light emitting chip is to be placed. Way.
KR1020140128481A 2014-09-12 2014-09-25 Semiconductor light emitting device and method of manufacturing the same KR101626904B1 (en)

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KR1020140128481A KR101626904B1 (en) 2014-09-25 2014-09-25 Semiconductor light emitting device and method of manufacturing the same
US15/510,585 US10411176B2 (en) 2014-09-12 2015-09-14 Method for manufacturing semiconductor light-emitting device
CN201580048716.1A CN106688115B (en) 2014-09-12 2015-09-14 The manufacturing method of semiconductor light-emitting elements
PCT/KR2015/009619 WO2016039593A1 (en) 2014-09-12 2015-09-14 Method for manufacturing semiconductor light-emitting device
US16/519,546 US10930832B2 (en) 2014-09-12 2019-07-23 Method for manufacturing semiconductor light emitting device
US16/519,467 US10763415B2 (en) 2014-09-12 2019-07-23 Method for manufacturing semiconductor light-emitting device

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