JP2011100853A - Method of manufacturing led device - Google Patents

Method of manufacturing led device Download PDF

Info

Publication number
JP2011100853A
JP2011100853A JP2009254636A JP2009254636A JP2011100853A JP 2011100853 A JP2011100853 A JP 2011100853A JP 2009254636 A JP2009254636 A JP 2009254636A JP 2009254636 A JP2009254636 A JP 2009254636A JP 2011100853 A JP2011100853 A JP 2011100853A
Authority
JP
Japan
Prior art keywords
led
circuit board
fluorescent
resin
transparent resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009254636A
Other languages
Japanese (ja)
Inventor
Hiroshi Tsukada
浩 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Electronics Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP2009254636A priority Critical patent/JP2011100853A/en
Publication of JP2011100853A publication Critical patent/JP2011100853A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing LED devices each having a conventionally known structure whose light extraction efficiency is good at low cost using techniques capable of mass-producing them. <P>SOLUTION: The method of manufacturing LED devices in which a plurality of LED devices 10 are simultaneously manufactured by mounting a plurality of LED elements 5 on a large-size circuit board 2L, and cutting and separating the respective LED elements 5 after coating the respective LED elements 5 with a fluorescent resin 8 in which fluorescent particles are mixed, includes steps of: mounting the plurality of LED elements 5 on the large-size circuit board 2L at predetermined intervals; coating the plurality of LED elements 5 with a transparent resin 7; forming grooves in the transparent resin 7 between the LED elements 5 by half-dicing up to the vicinity of the top of the large-size circuit board 2; coating the upper surface of the transparent resin 7 and the grooves 7a with the fluorescent resin 8; and cutting and separating the fluorescent resin 8 and large-size circuit board 2L at intermediate positions of the grooves 7a in the transparent resin 7. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は蛍光樹脂で被覆したLED装置の製造方法に関するものであり、詳しくは大判の回路基板上にLED素子を複数個実装し、各LED素子を蛍光樹脂で被覆した後に、切断分離して複数のLED装置を同時に製造するLED装置の製造方法に関する。   The present invention relates to a method for manufacturing an LED device coated with a fluorescent resin. Specifically, a plurality of LED elements are mounted on a large circuit board, and each LED element is covered with a fluorescent resin, and then cut and separated. The present invention relates to a method for manufacturing an LED device for simultaneously manufacturing the LED device.

近年、半導体素子であるLED素子は、長寿命で優れた駆動特性を有し、さらに小型で発光効率が良く鮮やかな発光色を有することから、カラー表示装置のバックライトや照明等に広く利用されるようになってきた。   In recent years, LED elements, which are semiconductor elements, have long life and excellent driving characteristics, and are also widely used in backlights and lighting of color display devices because they are small, have high luminous efficiency and have a bright emission color. It has come to be.

特に青色LEDとYAG蛍光体との組み合わせによる白色発光素子が開発されるに至り、蛍光体でLED素子を被覆したLED装置からの光取り出し効率を改善する手法が提案されている(例えば特許文献1)。   In particular, a white light emitting element by a combination of a blue LED and a YAG phosphor has been developed, and a method for improving light extraction efficiency from an LED device in which the LED element is covered with a phosphor has been proposed (for example, Patent Document 1). ).

以下、特許文献1における従来のLED装置について説明する。図4は、特許文献1におけるLED装置の断面図である。図4においてLED装置100は第1リード101、第2リード102を外部端子とし、第1リード101に実装したLED素子105と、第2リード102とをワイヤー103で接続した後に全体を透明樹脂107で被覆し、さらに透明樹脂107の表面を蛍光樹脂等の蛍光カバー108で被覆した構成となっている。   Hereinafter, a conventional LED device in Patent Document 1 will be described. FIG. 4 is a cross-sectional view of the LED device in Patent Document 1. In FIG. 4, the LED device 100 uses the first lead 101 and the second lead 102 as external terminals, and after the LED element 105 mounted on the first lead 101 and the second lead 102 are connected by the wire 103, the whole is made of a transparent resin 107. And the surface of the transparent resin 107 is covered with a fluorescent cover 108 such as a fluorescent resin.

上記LED装置100の動作としては、2本の外部端子である第1リード101及び第2リード102に駆動電圧を供給することによってLED素子105が発光し、この放射光が透明樹脂107内を通過した後に蛍光カバー108に入射する。そしてこの入射光は蛍光カバー108内において蛍光粒子と衝突することによって波長変換され、波長の異なる出射光として出射される。   As the operation of the LED device 100, the LED element 105 emits light by supplying a driving voltage to the first lead 101 and the second lead 102 which are two external terminals, and this radiated light passes through the transparent resin 107. Then, the light enters the fluorescent cover 108. The incident light is wavelength-converted by colliding with the fluorescent particles in the fluorescent cover 108 and is emitted as outgoing light having different wavelengths.

上記LED装置100において、LED素子105を青色LEDとし蛍光カバー108の混入蛍光粒子をYAG蛍光粒子とすれば、出射光は擬似白色光となるし、LED素子105を近紫外LEDとし蛍光カバー108の混入蛍光粒子を任意のカラー蛍光粒子とすれば、出射光は任意のカラー光となる。   In the LED device 100, if the LED element 105 is a blue LED and the mixed fluorescent particles of the fluorescent cover 108 are YAG fluorescent particles, the emitted light becomes pseudo white light, and the LED element 105 is a near-ultraviolet LED and the fluorescent cover 108 If the mixed fluorescent particles are arbitrary color fluorescent particles, the emitted light becomes arbitrary color light.

LED素子を直接蛍光樹脂で被覆しているLED装置の構成と比べると、上記LED装置100の構成では、蛍光体が蛍光カバー108だけに添加され、透明樹脂107内に添加されていないため、透明樹脂107内では蛍光粒子による光散乱が起こらず、表面の蛍光カバー108内でのみ蛍光粒子と入射光との衝突が生じるようになる。この結果、全体からみれば比較的薄い蛍光カバー108において蛍光体による光散乱損失が少なくなるため、このLED発光装置は波長変換に伴う輝度の低下が最小限に抑制され光取り出し効率が良くなる。 Compared with the configuration of the LED device in which the LED element is directly covered with the fluorescent resin, the configuration of the LED device 100 is transparent because the phosphor is added only to the fluorescent cover 108 and not added to the transparent resin 107. Light scattering by the fluorescent particles does not occur in the resin 107, and the collision between the fluorescent particles and the incident light occurs only in the fluorescent cover 108 on the surface. As a result, since the light scattering loss due to the phosphor is reduced in the relatively thin fluorescent cover 108 as a whole, the LED light-emitting device can suppress the decrease in luminance due to wavelength conversion and can improve the light extraction efficiency.

光取り出し効率の向上とは別の技術項目として、LED装置を大量生産する方法がある。このなかで効率良くチップ上のLED装置を得る製造方法として、大判の回路基板上にLED素子を複数個実装し、各LED素子を蛍光粒子を混入した蛍光樹脂で被覆した後に、切断分離して複数のLED装置を同時に製造するLED装置の製造方法が提案されている(例えば特許文献2)。   As a technical item different from the improvement of light extraction efficiency, there is a method of mass-producing LED devices. As a manufacturing method for efficiently obtaining an LED device on a chip, a plurality of LED elements are mounted on a large circuit board, each LED element is covered with a fluorescent resin mixed with fluorescent particles, and then cut and separated. An LED device manufacturing method for simultaneously manufacturing a plurality of LED devices has been proposed (for example, Patent Document 2).

次に、特許文献2に記載されているLED装置の製造方法について説明する。
図5は、特許文献2におけるLED装置の製造方法の工程図であり、各要素の断面を示している。
Next, the manufacturing method of the LED device described in Patent Document 2 will be described.
FIG. 5 is a process diagram of the manufacturing method of the LED device in Patent Document 2, and shows a cross section of each element.

図5(a)に示すようにLED素子ウエハー205Lをダイシングシート201上に貼り付け、図5(b)に示すようにLEDウエハー205Lを縦、横に所望のサイズにフルダイシングして各LED素子205を形成する。次に 図5(c)に示すように、ダイシングシート201を所望の大きさにエキスパンドして(ひき延ばして)各LED素子205の間隔を拡大する。
次に図5(d)に示すようにエキスパンドテープ201上に配置されたLED素子205の端子電極と回路基板202に設けられた配線電極を電気的に固着する。
As shown in FIG. 5A, the LED element wafer 205L is attached on the dicing sheet 201, and the LED wafer 205L is fully diced to a desired size vertically and horizontally as shown in FIG. 205 is formed. Next, as shown in FIG.5 (c), the dicing sheet 201 is expanded to a desired magnitude | size, and the space | interval of each LED element 205 is expanded.
Next, as shown in FIG. 5D, the terminal electrodes of the LED elements 205 arranged on the expanded tape 201 and the wiring electrodes provided on the circuit board 202 are electrically fixed.

次に図5(e)に示すように、各LED素子205の間隙や周囲を含むLED素子205全体を蛍光樹脂208で被覆してから、各LED素子205間をダイシングブレード209で切断分離することによって、図5(f)に示すように、回路基板202に実装されたLED素子205を蛍光樹脂208で被覆したLED装置200が得られる。   Next, as shown in FIG. 5 (e), the entire LED element 205 including the gaps and surroundings of the LED elements 205 is covered with a fluorescent resin 208, and then the LED elements 205 are cut and separated by a dicing blade 209. Thus, as shown in FIG. 5F, the LED device 200 in which the LED element 205 mounted on the circuit board 202 is covered with the fluorescent resin 208 is obtained.

特開平10−200165号公報Japanese Patent Laid-Open No. 10-200165 特開平10−144631号公報Japanese Patent Laid-Open No. 10-144631

図4に示した特許文献1に記載のLED装置100は、透明樹脂内では蛍光粒子による光散乱が起こらず、表面の蛍光カバー108内でのみ蛍光粒子と入射光との衝突が生じる。すなわち全体として蛍光カバー108は比較的薄いため蛍光体による光散乱で生じる損失が少なく、波長変換に伴う輝度の低下を最小限に抑制でき、光取り出し効率が良くなるといメリットがある。ところが透明樹脂107を成形した後のLED装置に対し、個別に蛍光カバー108を形成しなくてはならないので量産に適さないという課題があった。   In the LED device 100 described in Patent Document 1 shown in FIG. 4, light scattering by the fluorescent particles does not occur in the transparent resin, and the collision between the fluorescent particles and the incident light occurs only in the fluorescent cover 108 on the surface. That is, since the fluorescent cover 108 is relatively thin as a whole, there is little loss caused by light scattering by the phosphor, and a reduction in luminance due to wavelength conversion can be suppressed to a minimum, and there is an advantage that light extraction efficiency is improved. However, the LED device after molding the transparent resin 107 has a problem that it is not suitable for mass production because the fluorescent cover 108 must be formed individually.

また図5に示した特許文献2に記載のLED装置200は、大判の回路基板202上にLED素子205を複数個実装し、蛍光粒子を混入した蛍光樹脂208で各LED素子205を被覆した後に、切断分離して複数のLED装置200を同時に製造することができるため量産性が良い。しかしながらLED素子205を直接蛍光樹脂208で被覆しているため、波長変換に伴う輝度の低下が多く、光取り出し効率を良くできないという問題があった。   Further, in the LED device 200 described in Patent Document 2 shown in FIG. 5, a plurality of LED elements 205 are mounted on a large circuit board 202, and each LED element 205 is covered with a fluorescent resin 208 mixed with fluorescent particles. Since a plurality of LED devices 200 can be manufactured by cutting and separating simultaneously, mass productivity is good. However, since the LED element 205 is directly covered with the fluorescent resin 208, there is a problem that the luminance is often lowered due to wavelength conversion, and the light extraction efficiency cannot be improved.

そこで、本発明の目的は上記問題点に鑑み、特許文献1に示すような光取り出し効率が良いLED装置を、引用文献2に示すような量産可能な技術を用いて生産することができるLED装置の製造方法を提供することである。   Accordingly, in view of the above problems, an object of the present invention is to produce an LED device having a high light extraction efficiency as shown in Patent Document 1 using a technology capable of mass production as shown in Reference Document 2. It is to provide a manufacturing method.

上記目的を達成するため、本発明における製造方法は、大判の回路基板上にLED素子を複数個実装し、各LED素子を蛍光粒子を混入した蛍光樹脂で被覆した後に、切断分離して複数のLED装置を同時に製造するLED装置の製造方法において、大判の回路基板上に所定の間隔で複数のLED素子を実装する工程と、前記複数のLED素子を透明樹脂で被覆する工程と、前記LED素子間の透明樹脂をハーフダイシングにより前記回路基板上の近傍まで溝を形成する工程と、前記透明樹脂の上面及び溝を前記蛍光樹脂で被覆する工程と、前記蛍光樹脂及び前記回路基板を前記透明樹脂の溝の中間位置で切断分離する切断分離工程とを有することを特徴とする。   In order to achieve the above object, a manufacturing method according to the present invention includes mounting a plurality of LED elements on a large circuit board, coating each LED element with a fluorescent resin mixed with fluorescent particles, and then cutting and separating the plurality of LED elements. In a manufacturing method of an LED device for simultaneously manufacturing an LED device, a step of mounting a plurality of LED elements on a large circuit board at a predetermined interval, a step of covering the plurality of LED elements with a transparent resin, and the LED element A step of forming a groove to the vicinity of the circuit board by half dicing between the transparent resin, a step of covering the upper surface and the groove of the transparent resin with the fluorescent resin, and the fluorescent resin and the circuit board to the transparent resin. And a cutting and separating step of cutting and separating at an intermediate position of the groove.

上記製造方法によれば、光取り出し効率が良いLED装置を、量産可能な技術を用いて安価に量産することができる。   According to the above manufacturing method, an LED device with good light extraction efficiency can be mass-produced at low cost using a technology capable of mass production.

LED素子を実装する工程は、LED素子ウエハーをダイシングシート上に貼り付け、縦、横に所望のサイズにフルダイシングして各LED素子を形成するウエハーダイシング工程、ダイシングシートを所望の大きさにエキスパンドして各LED素子の間隔を所望の幅に拡大するエキスパンド工程、エキスパンドテープ上のLED素子を大判回路基板上の配線電極に位置決めし、LED素子の端子電極と大判回路基板に設けられた配線電極を電気的に固着するLED素子実装工程とを有すると良い。   The process of mounting the LED elements is a wafer dicing process in which each LED element is formed by sticking the LED element wafer onto a dicing sheet and then fully dicing the desired size vertically and horizontally, and the dicing sheet is expanded to a desired size. Expanding the interval between the LED elements to a desired width, positioning the LED elements on the expanded tape on the wiring electrodes on the large circuit board, and the terminal electrodes of the LED elements and the wiring electrodes provided on the large circuit board It is preferable to have an LED element mounting step for electrically fixing the LED.

LED素子は回路基板上にフリップチップ実装されていると良い。   The LED element is preferably flip-chip mounted on the circuit board.

上記の如く、本発明によれば、大判の回路基板上に所定の間隔で複数のLED素子を実装する工程と、前記複数のLED素子を透明樹脂で被覆する工程と、前記LED素子間の透明樹脂をハーフダイシングにより前記回路基板上の近傍まで溝を形成する工程と、前記透明樹脂の上面及び溝を蛍光樹脂で被覆する工程と、前記蛍光樹脂及び前記回路基板を前記透明樹脂の溝の中間位置で切断分離して複数のLED装置を同時に製造することができるため、光取り出し効率が良いLED装置を、量産可能な技術を用いて安価に量産することができる。   As described above, according to the present invention, a step of mounting a plurality of LED elements on a large circuit board at a predetermined interval, a step of covering the plurality of LED elements with a transparent resin, and the transparency between the LED elements Forming a groove to the vicinity of the circuit board by half dicing, covering the upper surface and the groove of the transparent resin with a fluorescent resin, and placing the fluorescent resin and the circuit board between the grooves of the transparent resin. Since a plurality of LED devices can be manufactured at the same time by cutting and separating at a position, an LED device having a high light extraction efficiency can be mass-produced at low cost using a technology that can be mass-produced.

本発明の製造方法によって製造されたLED装置の構成を示す断面図である。It is sectional drawing which shows the structure of the LED device manufactured by the manufacturing method of this invention. 本発明の第1実施形態である集合基板方式におけるLED装置の製造方法を示す工程図であり、各要素の断面を示している。It is process drawing which shows the manufacturing method of the LED apparatus in the aggregate substrate system which is 1st Embodiment of this invention, and has shown the cross section of each element. 本発明の第2実施形態である集合基板方式におけるLED装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED apparatus in the collective substrate system which is 2nd Embodiment of this invention. 従来のLED装置の断面図である。It is sectional drawing of the conventional LED device. 従来のLED装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the conventional LED device.

以下図面により、本発明の実施形態を説明する。図1は、本発明の製造方法で製造されたLED装置の断面図である。図2及び図3は、本発明の第1実施形態及び第2実施形態である集合基板方式におけるLED装置の製造方法を示す工程図であり、各要素の断面を示している。
(第1実施形態)
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of an LED device manufactured by the manufacturing method of the present invention. 2 and 3 are process diagrams showing a manufacturing method of the LED device in the collective substrate system according to the first embodiment and the second embodiment of the present invention, and show cross sections of each element.
(First embodiment)

図1において、回路基板2の上下面には配線電極2a、外部接続電極2bが設けられ、配線電極2aと外部接続電極2bはスルーホール電極2cを介して接続されている。配線電極2aにはバンプ電極5aを備えたLED素子5がフリップチップ実装されている。さらにLED素子5は透明樹脂7で被覆され、さらにその透明樹脂7の周囲全体は蛍光剤樹脂8で被覆されている。   In FIG. 1, wiring electrodes 2a and external connection electrodes 2b are provided on the upper and lower surfaces of the circuit board 2, and the wiring electrodes 2a and external connection electrodes 2b are connected via through-hole electrodes 2c. The LED element 5 provided with the bump electrode 5a is flip-chip mounted on the wiring electrode 2a. Further, the LED element 5 is covered with a transparent resin 7, and the entire periphery of the transparent resin 7 is covered with a fluorescent agent resin 8.

次に上記LED装置10の動作を説明する。2個の外部接続電極2bに駆動電圧を供給することによってLED素子5が発光し、この放射光が透明樹脂7内を通過した後に蛍光樹脂8に入射する。そしてこの入射光は蛍光樹脂8内において蛍光粒子と衝突することによって波長変換され、波長の異なる出射光として出射する。   Next, the operation of the LED device 10 will be described. By supplying a driving voltage to the two external connection electrodes 2b, the LED element 5 emits light, and the emitted light passes through the transparent resin 7 and then enters the fluorescent resin 8. The incident light is converted in wavelength by colliding with fluorescent particles in the fluorescent resin 8 and is emitted as outgoing light having different wavelengths.

上記LED装置10において、LED素子5を青色LEDとし蛍光樹脂8の混入蛍光粒子をYAG蛍光粒子とすれば、出射光は擬似白色光となるし、LED素子5を近紫外LEDとし蛍光樹脂8の混入蛍光粒子を任意のカラー蛍光粒子とすれば、出射光は任意のカラー光となる。   In the LED device 10, if the LED element 5 is a blue LED and the fluorescent particles mixed with the fluorescent resin 8 are YAG fluorescent particles, the emitted light becomes pseudo white light, the LED element 5 is a near-ultraviolet LED, and the fluorescent resin 8 If the mixed fluorescent particles are arbitrary color fluorescent particles, the emitted light becomes arbitrary color light.

LED素子を直接蛍光樹脂で被覆しているLED装置の構成と比べ、上記LED装置10の構成によれば、蛍光体が蛍光樹脂8だけに添加され、透明樹脂7内に添加されていないため、透明樹脂7内では蛍光粒子による光散乱が起こらず、表面の蛍光樹脂8内でのみ蛍光粒子と入射光との衝突が生じる。すなわち、全体として比較的薄い蛍光樹脂8において光散乱損失が少なくなるため、LED装置は波長変換に伴う輝度の低下が最小限に抑制され光取り出し効率が良くなる。   Compared with the configuration of the LED device in which the LED element is directly covered with the fluorescent resin, according to the configuration of the LED device 10, the phosphor is added only to the fluorescent resin 8 and not added to the transparent resin 7, Light scattering by the fluorescent particles does not occur in the transparent resin 7, and the collision between the fluorescent particles and the incident light occurs only in the fluorescent resin 8 on the surface. That is, since the light scattering loss is reduced in the relatively thin fluorescent resin 8 as a whole, the LED device is suppressed to the minimum in luminance due to wavelength conversion, and the light extraction efficiency is improved.

次に図2により本発明の第1実施形態である集合基板方式におけるLED装置の製造方法を説明する。図2(a)は集合基板方式における大判回路基板2Lの上面に複数のLED素子5を所定の間隔で実装するLED実装工程、図2(b)は複数のLED素子5を透明樹脂7で被覆する透明樹脂被覆工程、図2(c)は、図2(b)に点線で示す切断線S1に従ってLED素子5間の透明樹脂7を、大判回路基板2Lの上面近傍までハーフダイシングして溝7aを形成する溝形成工程、図2(d)は透明樹脂7の上面及び溝7aを蛍光樹脂8で被覆する蛍光樹脂被覆工程、図2(e)は、図2(d)に点線で示す切断線S2に従って蛍光樹脂8及び大判回路基板2LをフルダイシングしてLED装置を切断分離する切断分離工程である。
この切断分離工程は透明樹脂7の溝7aの中間位置で切断分離することにより、図1に示すLED装置10を複数個、同時に生産している。
(第2実施形態)
Next, a method for manufacturing an LED device in the collective substrate system according to the first embodiment of the invention will be described with reference to FIG. 2A shows an LED mounting process in which a plurality of LED elements 5 are mounted on a top surface of a large circuit board 2L in a collective substrate system at a predetermined interval, and FIG. 2B shows a plurality of LED elements 5 covered with a transparent resin 7. FIG. 2C shows a step of transparent resin coating between the LED elements 5 according to the cutting line S1 shown by the dotted line in FIG. 2B, and half-dicing the surface of the large circuit board 2L to the groove 7a. 2 (d) is a fluorescent resin coating step in which the upper surface of the transparent resin 7 and the groove 7a are covered with the fluorescent resin 8. FIG. 2 (e) is a cut shown by a dotted line in FIG. 2 (d). This is a cutting / separating step of fully dicing the fluorescent resin 8 and the large-sized circuit board 2L according to the line S2 to cut and separate the LED device.
In this cutting and separating step, a plurality of LED devices 10 shown in FIG. 1 are simultaneously produced by cutting and separating at the intermediate position of the groove 7 a of the transparent resin 7.
(Second Embodiment)

次に図3により本発明の第2実施形態である集合基板方式におけるLED装置の製造方法を説明する。図3に示す第2実施形態におけるLED装置の製造方法は、基本的に図2に示す第1実施形態におけるLED装置の製造方法と同じ部分を有し、同一要素及び同一工程には同一番号を付し、重複する説明を省略する。   Next, a method for manufacturing an LED device in the collective substrate system according to the second embodiment of the present invention will be described with reference to FIG. The method for manufacturing the LED device in the second embodiment shown in FIG. 3 has basically the same parts as the method for manufacturing the LED device in the first embodiment shown in FIG. A duplicate description will be omitted.

すなわち、第2実施形態におけるLED装置の製造方法と、第1実施形態におけるLED装置の製造方法との違いは、大判回路基板2Lの上面に複数のLED素子5を所定の間隔で実装する工程を追加したものである。図3(x)はLED素子ウエハー5Lをダイシングシート1上に貼り付け、縦、横に所望のサイズにフルダイシングして各LED素子5を形成するウエハーダイシング工程、図3(y)はダイシングシート1を所望の大きさにエキスパンドして各LED素子5の間隔を所望の幅に拡大するエキスパンド工程、図3(z)はエキスパンドテープ1を一点鎖線で示す如く、反転させて大判回路基板2L上の配線電極に位置決めし、LED素子5の端子電極と大判回路基板2Lに設けられた配線電極を電気的に固着するLED素子実装工程である。   That is, the difference between the manufacturing method of the LED device in the second embodiment and the manufacturing method of the LED device in the first embodiment is that a plurality of LED elements 5 are mounted on the upper surface of the large circuit board 2L at a predetermined interval. It is added. FIG. 3 (x) shows a wafer dicing process in which the LED element wafer 5L is bonded onto the dicing sheet 1 and full dicing is performed to a desired size vertically and horizontally to form each LED element 5, and FIG. 3 (y) is a dicing sheet. 1 is expanded to a desired size to expand the space between the LED elements 5 to a desired width. FIG. 3 (z) shows the expanded tape 1 on the large circuit board 2 </ b> L by inverting it as indicated by a dashed line. This is an LED element mounting step in which the terminal electrode of the LED element 5 and the wiring electrode provided on the large circuit board 2L are electrically fixed to each other.

この図3(x)(y)(z)の工程によって、図2(a)に示す大判回路基板2Lの上面に複数のLED素子5が所定の間隔で実装されるLED実装工程が完成し、以後の図3(a〜e)までの各工程は図2(a〜e)の工程と同じである。   3 (x) (y) (z) completes an LED mounting process in which a plurality of LED elements 5 are mounted on the upper surface of the large circuit board 2L shown in FIG. 2 (a) at a predetermined interval. The subsequent steps up to FIGS. 3A to 3E are the same as the steps of FIGS. 2A to 2E.

なお大判回路基板2上にLED素子5を配置する方法は第2実施形態に記載された方法に限らない。予め座標位置を記憶したソーターで大判回路基板2上にLED素子5を配置しても良いし、位置決め枠を使って大判回路基板2上にLED素子5を配置してもよい。   In addition, the method of arrange | positioning the LED element 5 on the large format circuit board 2 is not restricted to the method described in 2nd Embodiment. The LED elements 5 may be arranged on the large circuit board 2 with a sorter in which the coordinate positions are stored in advance, or the LED elements 5 may be arranged on the large circuit board 2 using a positioning frame.

上記の如く本発明によれば、引用文献2に記載された、量産性の高い集合基板方式におけるLED装置の製造方法にわずかな工程を追加するだけで、引用文献1に記載された光散乱による損失が少なく、波長変換に伴う輝度の低下を最小限に抑制した、光取り出し効率の良いLED装置を安価に量産することが可能となる。   As described above, according to the present invention, only a few steps are added to the manufacturing method of the LED device in the collective substrate system described in the cited document 2, which is highly mass-productive. It is possible to inexpensively mass-produce LED devices with low light loss and low light intensity due to wavelength conversion and with minimal light extraction efficiency.

1、201 エキスパンドシート
2、202 回路基板
2a 配線電極
2b 外部接続電極
2c スルーホール電極
2L 202L 大判回路基板、
5,105,205 LED素子
5a バンプ電極
7,107 透明樹脂
7a 溝
8 蛍光樹脂
10,100,200 LED装置
208 蛍光カバー
S1,S2 切断腺
1,201 Expand sheet 2,202 Circuit board 2a Wiring electrode 2b External connection electrode 2c Through-hole electrode 2L 202L Large format circuit board,
5, 105, 205 LED element 5a Bump electrode 7, 107 Transparent resin 7a Groove 8 Fluorescent resin 10, 100, 200 LED device 208 Fluorescent cover S1, S2 Cut gland

Claims (3)

大判の回路基板上にLED素子を複数個実装し、各LED素子を蛍光粒子を混入した蛍光樹脂で被覆した後に、切断分離して複数のLED装置を同時に製造するLED装置の製造方法において、大判の回路基板上に所定の間隔で複数のLED素子を実装する工程と、前記複数のLED素子を透明樹脂で被覆する工程と、前記LED素子間の透明樹脂をハーフダイシングにより、前記回路基板上の近傍までの溝を形成する工程と、前記透明樹脂の上面及び溝を蛍光樹脂で被覆する工程と、前記蛍光樹脂及び前記回路基板を前記透明樹脂の溝の中間位置で、切断分離する切断分離工程を有することを特徴とするLED装置の製造方法。   In a method for manufacturing an LED device, a plurality of LED elements are mounted on a large circuit board, each LED element is covered with a fluorescent resin mixed with fluorescent particles, and then cut and separated to simultaneously manufacture a plurality of LED devices. A step of mounting a plurality of LED elements on the circuit board at predetermined intervals, a step of covering the plurality of LED elements with a transparent resin, and a transparent resin between the LED elements by half dicing. A step of forming a groove to the vicinity, a step of covering the upper surface and the groove of the transparent resin with a fluorescent resin, and a cutting and separating step of cutting and separating the fluorescent resin and the circuit board at an intermediate position of the groove of the transparent resin. The manufacturing method of the LED device characterized by having. 前記LED素子を実装する工程は、LED素子ウエハーをダイシングシート上に貼り付け、縦、横に所望のサイズにフルダイシングして各LED素子を形成するウエハーダイシング工程、ダイシングシートを所望の大きさにエキスパンドして各LED素子の間隔を所望の幅に拡大するエキスパンド工程、エキスパンドテープ上のLED素子を大判回路基板上の配線電極に位置決めし、LED素子の端子電極と大判回路基板に設けられた配線電極を電気的に固着するLED素子実装工程とを有することを特徴とする請求項1記載のLED装置の製造方法。   The process of mounting the LED elements includes a wafer dicing process in which each LED element is formed by sticking an LED element wafer on a dicing sheet and fully dicing vertically and horizontally to a desired size. Expanding and expanding the space between each LED element to a desired width, positioning the LED element on the expanded tape on the wiring electrode on the large circuit board, and the wiring provided on the terminal electrode of the LED element and the large circuit board The LED device manufacturing method according to claim 1, further comprising: an LED element mounting step for electrically fixing the electrodes. 前記LED素子は回路基板上にフリップチップ実装されていることを特徴とする請求項1または2に記載のLED装置の製造方法。
The method of manufacturing an LED device according to claim 1, wherein the LED element is flip-chip mounted on a circuit board.
JP2009254636A 2009-11-06 2009-11-06 Method of manufacturing led device Pending JP2011100853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009254636A JP2011100853A (en) 2009-11-06 2009-11-06 Method of manufacturing led device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009254636A JP2011100853A (en) 2009-11-06 2009-11-06 Method of manufacturing led device

Publications (1)

Publication Number Publication Date
JP2011100853A true JP2011100853A (en) 2011-05-19

Family

ID=44191809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009254636A Pending JP2011100853A (en) 2009-11-06 2009-11-06 Method of manufacturing led device

Country Status (1)

Country Link
JP (1) JP2011100853A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101256929B1 (en) * 2011-12-26 2013-04-19 루미마이크로 주식회사 Light emitting device chip having wavelenth-converting layer and method of fabricating the same
KR101300463B1 (en) * 2012-08-24 2013-08-26 주식회사 씨티랩 Method of manufacutruing semiconductor device structure
KR20160036743A (en) * 2014-09-25 2016-04-05 주식회사 세미콘라이트 Semiconductor light emitting device and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101256929B1 (en) * 2011-12-26 2013-04-19 루미마이크로 주식회사 Light emitting device chip having wavelenth-converting layer and method of fabricating the same
KR101300463B1 (en) * 2012-08-24 2013-08-26 주식회사 씨티랩 Method of manufacutruing semiconductor device structure
KR20160036743A (en) * 2014-09-25 2016-04-05 주식회사 세미콘라이트 Semiconductor light emitting device and method of manufacturing the same
KR101626904B1 (en) 2014-09-25 2016-06-03 주식회사 세미콘라이트 Semiconductor light emitting device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
US7902568B2 (en) Light-emitting module with plural light emitters and conductor pattern
JP4966199B2 (en) LED light source
JP6359632B2 (en) Light emitting device package
US20100078657A1 (en) Semiconductor light emitting device, light emitting module, lighting appartus, display element and manufacturing method of semiconductor light emitting device
JPWO2005106978A1 (en) Light emitting device and manufacturing method thereof
US8860047B2 (en) Semiconductor light-emitting device
JP6100778B2 (en) LED mixing chamber with a reflective wall formed in the slot
JP2012199411A (en) Light emitting device
KR20120133264A (en) Lens for light emitting diode, light emitting diode module comprising the same and method for manufacturing light emitting diode module using the same
JP2013021042A (en) Semiconductor light-emitting device and manufacturing method of the same
WO2013118076A1 (en) Low cost encapsulated light-emitting device
JP2007281218A (en) Light emitting diode and its manufacturing method
JP5697091B2 (en) Semiconductor light emitting device
JP5737083B2 (en) LED light source device
JP2011100853A (en) Method of manufacturing led device
JP5278175B2 (en) Light emitting device
JP5813636B2 (en) Light source manufacturing method and light source
JP2016009823A (en) Method of manufacturing light emission device
JP5254422B2 (en) LED light source
US9534747B2 (en) Light-emitting diode assembly and fabrication method thereof
KR20130077058A (en) Led package and method for manufacturing the same
TWI467808B (en) Light emitting device, method of manufacturing the same and light emitting apparatus
US8273588B2 (en) Method for producing a luminous device and luminous device
JP5550754B2 (en) LED light source and liquid crystal display device
JP2006196572A (en) Light emitting diode and its manufacturing method