JP2012253404A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2012253404A
JP2012253404A JP2011122140A JP2011122140A JP2012253404A JP 2012253404 A JP2012253404 A JP 2012253404A JP 2011122140 A JP2011122140 A JP 2011122140A JP 2011122140 A JP2011122140 A JP 2011122140A JP 2012253404 A JP2012253404 A JP 2012253404A
Authority
JP
Japan
Prior art keywords
transistor
inversion region
tail current
differential pair
channel width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011122140A
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English (en)
Japanese (ja)
Other versions
JP2012253404A5 (enExample
Inventor
Kiyohiko Sakakibara
清彦 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2011122140A priority Critical patent/JP2012253404A/ja
Priority to US13/482,891 priority patent/US8575969B2/en
Priority to CN2012101810810A priority patent/CN102811048A/zh
Publication of JP2012253404A publication Critical patent/JP2012253404A/ja
Publication of JP2012253404A5 publication Critical patent/JP2012253404A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011122140A 2011-05-31 2011-05-31 半導体装置 Pending JP2012253404A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011122140A JP2012253404A (ja) 2011-05-31 2011-05-31 半導体装置
US13/482,891 US8575969B2 (en) 2011-05-31 2012-05-29 Semiconductor device having differential pair transistors with a switchable tail current
CN2012101810810A CN102811048A (zh) 2011-05-31 2012-05-30 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011122140A JP2012253404A (ja) 2011-05-31 2011-05-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2012253404A true JP2012253404A (ja) 2012-12-20
JP2012253404A5 JP2012253404A5 (enExample) 2014-03-27

Family

ID=47234646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011122140A Pending JP2012253404A (ja) 2011-05-31 2011-05-31 半導体装置

Country Status (3)

Country Link
US (1) US8575969B2 (enExample)
JP (1) JP2012253404A (enExample)
CN (1) CN102811048A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10819295B2 (en) 2019-02-19 2020-10-27 Toshiba Memory Corporation Semiconductor device and memory system

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150087725A (ko) 2014-01-22 2015-07-30 삼성전자주식회사 반도체 장치의 시뮬레이션 방법 및 이를 이용한 반도체 장치의 설계 방법
CN107786185B (zh) * 2016-08-26 2021-08-20 瑞昱半导体股份有限公司 相位内插器
KR102469071B1 (ko) * 2018-02-06 2022-11-23 에스케이하이닉스 주식회사 비교 장치 및 그에 따른 씨모스 이미지 센서
KR102495364B1 (ko) * 2018-03-21 2023-02-06 에스케이하이닉스 주식회사 버퍼 회로 및 이를 포함하는 메모리 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291576A (ja) * 1993-04-02 1994-10-18 Mitsubishi Electric Corp 半導体集積回路
JPH10303658A (ja) * 1997-02-27 1998-11-13 Toshiba Microelectron Corp 差動増幅器、基準電圧発生回路、昇圧回路及び半導体記憶装置
JP2005217652A (ja) * 2004-01-28 2005-08-11 Fuji Electric Holdings Co Ltd 差動増幅回路
JP2006222329A (ja) * 2005-02-14 2006-08-24 Elpida Memory Inc 半導体装置
JP2008288900A (ja) * 2007-05-17 2008-11-27 Advantest Corp 差動増幅器
JP2011072102A (ja) * 2009-09-25 2011-04-07 Rohm Co Ltd スイッチングレギュレータ

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FR2671244B1 (fr) * 1990-12-27 1993-03-05 Bull Sa Dispositif de retard reglable.
US5339067A (en) * 1993-05-07 1994-08-16 Crystal Semiconductor Corporation Integrated voltage divider and circuit employing an integrated voltage divider
FR2731570B1 (fr) * 1995-03-07 1997-05-23 Sgs Thomson Microelectronics Circuit logique a etage differentiel
US6051999A (en) * 1998-01-14 2000-04-18 Intel Corporation Low voltage programmable complementary input stage sense amplifier
US8149048B1 (en) * 2000-10-26 2012-04-03 Cypress Semiconductor Corporation Apparatus and method for programmable power management in a programmable analog circuit block
US6617888B2 (en) * 2002-01-02 2003-09-09 Intel Corporation Low supply voltage differential signal driver
JP4438406B2 (ja) 2003-06-27 2010-03-24 アイシン精機株式会社 スタビライザ制御装置
US7187206B2 (en) * 2003-10-30 2007-03-06 International Business Machines Corporation Power savings in serial link transmitters
US7227402B2 (en) * 2004-08-23 2007-06-05 Micron Technology, Inc. System and method for controlling input buffer biasing current
US7102392B2 (en) * 2005-01-18 2006-09-05 International Business Machines Corporation Signal detector for high-speed serdes
CN100459417C (zh) * 2005-06-14 2009-02-04 北京大学 低压低功耗高隔离度差分放大器
US7449923B2 (en) * 2005-08-17 2008-11-11 Freescale Semiconductor, Inc. Amplifier circuit for double sampled architectures

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291576A (ja) * 1993-04-02 1994-10-18 Mitsubishi Electric Corp 半導体集積回路
JPH10303658A (ja) * 1997-02-27 1998-11-13 Toshiba Microelectron Corp 差動増幅器、基準電圧発生回路、昇圧回路及び半導体記憶装置
JP2005217652A (ja) * 2004-01-28 2005-08-11 Fuji Electric Holdings Co Ltd 差動増幅回路
JP2006222329A (ja) * 2005-02-14 2006-08-24 Elpida Memory Inc 半導体装置
JP2008288900A (ja) * 2007-05-17 2008-11-27 Advantest Corp 差動増幅器
JP2011072102A (ja) * 2009-09-25 2011-04-07 Rohm Co Ltd スイッチングレギュレータ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10819295B2 (en) 2019-02-19 2020-10-27 Toshiba Memory Corporation Semiconductor device and memory system
US11152902B2 (en) 2019-02-19 2021-10-19 Toshiba Memory Corporation Semiconductor device and memory system

Also Published As

Publication number Publication date
CN102811048A (zh) 2012-12-05
US20120306546A1 (en) 2012-12-06
US8575969B2 (en) 2013-11-05

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