JP2012248181A - タッチパネルの電極構造、その方法およびタッチパネル - Google Patents
タッチパネルの電極構造、その方法およびタッチパネル Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 20
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- 239000002184 metal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/044—Conductor-insulator-semiconductor electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Position Input By Displaying (AREA)
Abstract
【解決手段】電極構造300は、基板上に配置されて互いに離されている複数の第1の導電セル311および第2の導電セル321と、隣接した第1の導電セル311に接続する複数の第1の導電線312および隣接した第2の導電セル311に接続する複数の第2の導電線322と、を備える。各第2の導電線322は、導電要素324と、導電要素324の両側に配置されて隣接した第2の導電セル321に導電要素324を接続する、第2の導電枝(conductive branch)323の対と、を備える。第1の導電線312および第2の導電線322は、絶縁されて交差される。
【選択図】図1
Description
310 第1の電極グループ、
311 第1の導電セル、
322 第1の導電線、
320 第2の電極グループ、
321 第2の導電セル、
322 第2の導電線、
323 第2の導電枝(conductive branch)、
324 導電要素、
330 絶縁層、
331 絶縁要素、
341 ウィンドウ(window)、
342 閉じられた隙間(closed gap)
Claims (16)
- 互いに離されて基板上に配置される複数の第1の導電セルおよび第2の導電セルと、
隣接した前記第1の導電セルを接続する複数の第1の導電線および隣接した前記第2の導電セルを接続する複数の第2の導電線と、を備え、
前記第2の導電線は、
少なくとも1つの導電要素と、
前記導電要素の両側に配置されて、隣接した前記第2の導電セルに前記導電要素を接続する、少なくとも1つの対の第2の導電枝(conductive branch)と、を備え、
前記第1の導電線および前記第2の導電線は絶縁されて交差される、
電極構造。 - 前記導電要素は、前記第1の導電線から離されて絶縁される、
請求項1に記載の電極構造。 - ウィンドウ(window)が各前記第1の導電線に形成され、前記ウィンドウ(window)は、前記導電要素および前記第1の導電線の間に形成される閉じられた隙間(closed gap)を備え、
各前記導電要素が前記ウィンドウ(window)に配置される、
請求項1または2に記載の電極構造。 - 絶縁層が、前記第1の導電線および前記第2の導電枝(conductive branch)の間に配置される、
請求項1〜3いずれか1項に記載の電極構造。 - 前記絶縁層は、複数の絶縁要素を備える、
請求項4に記載の電極構造。 - 前記第1の導電セルおよび前記第2の導電セルに接続する複数の信号線をさらに備える、
請求項1〜5いずれか1項に記載の電極構造。 - 前記第1の導電線は、前記基板上に配置されている、
請求項1〜6いずれか1項に記載の電極構造。 - 前記第2の導電枝(conductive branch)は、前記基板上に配置されている、
請求項1〜6いずれか1項に記載の電極構造。 - 各前記対の第2の導電枝(conductive branch)の長さは、2つの隣接した前記第2の導電セルの間の距離よりも小さい、
請求項1〜8いずれか1項に記載の電極構造。 - a)複数の第1の導電セルと、隣接した前記第1の導電セルに接続する複数の第1の導電線と、複数の第2の導電セルと、を形成するステップと、
b)前記第1の導電線から絶縁される複数の導電要素を形成するステップと、
c)前記第1の導電線を横切って前記導電要素を備える前記第2の導電セルに接続する、複数の対の第2の導電枝(conductive branch)を形成するステップと、を備える、
電極構造の形成方法。 - 前記第1の導電線および前記第2の導電枝(conductive branch)の間に絶縁層を形成するステップをさらに備える、
請求項10に記載の電極構造の形成方法。 - 前記絶縁層は、複数の絶縁要素を備える、
請求項10または11に記載の電極構造の形成方法。 - 前記ステップa)および前記ステップb)は、同時に実行される、
請求項10〜12いずれか1項に記載の電極構造の形成方法。 - 前記複数の第1の導電セルおよび前記複数の第2の導電セルに接続する複数の信号線を、前記電極構造の輪郭上に形成するステップをさらに備える、
請求項10〜13いずれか1項に記載の電極構造の形成方法。 - 前記ステップa)において、ウィンドウ(window)が各前記第1の導電線に形成され、
前記ステップb)において、各前記導電要素が、前記導電要素および前記第1の導電線の間に形成される閉じられた隙間(closed gap)を持つ前記ウィンドウ(window)に配置される、
請求項10〜14いずれか1項に記載の電極構造の形成方法。 - タッチ感知信号を生成する請求項1に記載の電極構造と、
前記タッチ感知信号を受信及び処理するコントローラと、を備える、
タッチパネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110152884.9A CN102799301B (zh) | 2011-05-28 | 2011-05-28 | 触控面板的电极结构、制造方法以及触控面板 |
CN201110152884.9 | 2011-05-28 |
Publications (2)
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JP2012248181A true JP2012248181A (ja) | 2012-12-13 |
JP5420709B2 JP5420709B2 (ja) | 2014-02-19 |
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JP2012083712A Active JP5420709B2 (ja) | 2011-05-28 | 2012-04-02 | タッチパネルの電極構造、その方法およびタッチパネル |
Country Status (6)
Country | Link |
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US (2) | US8698001B2 (ja) |
EP (1) | EP2530565B1 (ja) |
JP (1) | JP5420709B2 (ja) |
KR (1) | KR101330779B1 (ja) |
CN (1) | CN102799301B (ja) |
TW (2) | TWM423866U (ja) |
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JP2014153790A (ja) * | 2013-02-06 | 2014-08-25 | Alps Electric Co Ltd | 入力装置 |
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TW200842681A (en) | 2007-04-27 | 2008-11-01 | Tpk Touch Solutions Inc | Touch pattern structure of a capacitive touch panel |
TWI374379B (en) | 2007-12-24 | 2012-10-11 | Wintek Corp | Transparent capacitive touch panel and manufacturing method thereof |
WO2010105507A1 (zh) | 2009-03-20 | 2010-09-23 | 宸鸿科技(厦门)有限公司 | 电容式触控电路图形及其制法 |
CN102279678A (zh) | 2010-06-12 | 2011-12-14 | 宸鸿科技(厦门)有限公司 | 触控电路图形结构及制造方法、触控面板及触控显示屏 |
CN102799301B (zh) * | 2011-05-28 | 2015-05-20 | 宸鸿科技(厦门)有限公司 | 触控面板的电极结构、制造方法以及触控面板 |
CN102866794A (zh) | 2011-06-15 | 2013-01-09 | 宸鸿光电科技股份有限公司 | 触控感测层及其制造方法 |
JP5413443B2 (ja) * | 2011-12-12 | 2014-02-12 | 株式会社デンソー | 電子装置 |
US8895882B2 (en) * | 2012-03-14 | 2014-11-25 | Htc Corporation | Touch panel |
KR101389086B1 (ko) * | 2012-04-12 | 2014-04-25 | 티피케이 터치 솔루션즈 (씨아먼) 인코포레이티드 | 정전용량식 터치 패널의 전도체 패턴 구조 |
CN103246420B (zh) * | 2013-05-13 | 2016-08-10 | 苏州欧菲光科技有限公司 | 单层多点电容触摸屏 |
TWI492105B (zh) * | 2013-10-25 | 2015-07-11 | 致伸科技股份有限公司 | 觸控滑鼠及應用於觸控滑鼠之觸控電路板 |
CN104932764B (zh) * | 2015-06-25 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种电容式触控屏及其制备方法、显示装置 |
CN106873831B (zh) * | 2017-02-07 | 2023-09-19 | 安徽精卓光显技术有限责任公司 | 触摸显示屏、压力感应触摸屏及其制作方法 |
KR102551226B1 (ko) | 2018-07-25 | 2023-07-04 | 삼성디스플레이 주식회사 | 터치 부재 및 터치 부재를 구비하는 표시장치 |
KR102688773B1 (ko) * | 2018-11-21 | 2024-07-29 | 삼성디스플레이 주식회사 | 입력감지유닛 및 이를 포함하는 표시장치 |
TWI710937B (zh) * | 2019-06-14 | 2020-11-21 | 友達光電股份有限公司 | 觸控裝置 |
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CN102799301A (zh) | 2012-11-28 |
TWI464656B (zh) | 2014-12-11 |
KR101330779B1 (ko) | 2013-11-18 |
US20120298405A1 (en) | 2012-11-29 |
US8698001B2 (en) | 2014-04-15 |
TWM423866U (en) | 2012-03-01 |
JP5420709B2 (ja) | 2014-02-19 |
TW201248481A (en) | 2012-12-01 |
EP2530565B1 (en) | 2016-05-25 |
US20140166611A1 (en) | 2014-06-19 |
EP2530565A3 (en) | 2014-01-22 |
US9153385B2 (en) | 2015-10-06 |
EP2530565A2 (en) | 2012-12-05 |
KR20120132606A (ko) | 2012-12-06 |
CN102799301B (zh) | 2015-05-20 |
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