JP2012244167A - 蒸気送達装置、その製造方法およびその使用方法 - Google Patents
蒸気送達装置、その製造方法およびその使用方法 Download PDFInfo
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- VVMHEQTZQUANAO-UHFFFAOYSA-N bis[bis(trimethylsilyl)amino]germanium Chemical compound C[Si](C)(C)N([Si](C)(C)C)[Ge]N([Si](C)(C)C)[Si](C)(C)C VVMHEQTZQUANAO-UHFFFAOYSA-N 0.000 description 1
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- FOJZPLNOZUNMJO-UHFFFAOYSA-M chloro(dimethyl)indigane Chemical compound [Cl-].C[In+]C FOJZPLNOZUNMJO-UHFFFAOYSA-M 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- NAELOTVRFCXVRC-UHFFFAOYSA-L dichloro(methyl)indigane Chemical compound [Cl-].[Cl-].[In+2]C NAELOTVRFCXVRC-UHFFFAOYSA-L 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- DJYALRJDNXBDCR-UHFFFAOYSA-M ethane;iodozinc(1+) Chemical compound [CH2-]C.I[Zn+] DJYALRJDNXBDCR-UHFFFAOYSA-M 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 150000002259 gallium compounds Chemical class 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- GUXMHDBVIQWCFJ-UHFFFAOYSA-N trimethylarsane trimethylindigane Chemical class C[As](C)C.C[In](C)C GUXMHDBVIQWCFJ-UHFFFAOYSA-N 0.000 description 1
- BSRUTWLOBPCVAB-UHFFFAOYSA-N trimethylindigane;trimethylphosphane Chemical class CP(C)C.C[In](C)C BSRUTWLOBPCVAB-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
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- G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】方法は、固体前駆体化合物を収容する送達装置102にキャリアガスの第1の流れ202を移送することを含む。キャリアガスの第1の流れは20℃以上の温度である。この方法は、送達装置の下流の位置にキャリアガスの第2の流れ204を移送することをさらに含む。第1の流れおよび第2の流れは一緒にされて第3の流れ206を形成し、この第3の流れにおける固体前駆体化合物の蒸気の露点は周囲温度より低い。第1の流れのフロー方向、第2の流れのフロー方向および第3の流れのフロー方向は一方向性であり、かつ互いに対向していない。
【選択図】図1
Description
98 第2の圧力調節装置
100 送達システム
102 送達装置
103 加熱ジャケット
104 化学センサー
106 圧力センサー
107 混合チャンバー
108 第1の圧力/流量コントローラー
110 第2の圧力/流量コントローラー
112 第1の比例バルブ
114 第2の比例バルブ
116、118、120、122 シャットオフバルブ
200 反応器
202 キャリアガスの第1の流れ
204 キャリアガスの第2の流れ
206 第3の流れ
208 質量流量コントローラー
212 配管のコイル
300 チャンバー
302、304、306 導管
310 フランジ
312 空間
Claims (10)
- 送達装置、第1の比例バルブ、化学センサー、および第1の圧力/流量コントローラーを含む送達システムであって;
前記送達装置は入口ポートおよび出口ポートを有しており;
前記送達装置は前記第1の比例バルブと作動的に連通しており;
前記第1の比例バルブは適用される電圧に基づいてキャリアガスのフローを制御するように作動するものであり;
前記化学センサーは前記送達装置の下流に配置されており、かつ前記送達装置から出てくる流体流れの化学的内容を分析するように作動するものであり;
前記化学センサーは前記第1の比例バルブと連絡しており;
前記第1の圧力/流量コントローラーは前記化学センサーおよび前記第1の比例バルブと作動的に連絡しており;
前記送達システムはキャリアガスの単位体積あたり実質的に一定のモル数の前駆体蒸気を、前記送達システムと連通している複数の反応器に送達するように作動するものである;
送達システム。 - 第1の比例バルブが前記送達装置の上流にあり、かつ第1の圧力/流量コントローラーと電気連絡している、請求項1に記載の送達システム。
- 前記送達装置と流体連通している圧力センサー;第2の比例バルブ、および第2の圧力/流量コントローラーをさらに含み;前記第2の比例バルブが前記第2の圧力/流量コントローラーと電気連絡している、請求項1に記載の送達システム。
- 第1の圧力/流量コントローラー、前記第1の比例バルブ、前記送達装置および前記化学センサーが第1の閉じたループにある、請求項1に記載の送達システム。
- 前記第2の圧力/流量コントローラー、前記第2の比例バルブおよび前記圧力センサーが第2の閉じたループにある、請求項3に記載の送達システム。
- 前記送達システムが、1標準リットル/分以上のキャリアガス流量で、60℃以上の温度で、および900torr以上の圧力で、1,500マイクロモル/分以上の割合で固体前駆体化合物の蒸気を送達するように作動するものである、請求項1に記載の送達システム。
- 前記送達システムが、前駆体蒸気を複数の反応器に送達する前に、前駆体蒸気の露点を周囲温度未満に下げるように作動するものである、請求項1に記載の送達システム。
- 送達システムにおける全てのフローが一方向性であり、かつこれらフローのいずれも互いに対向していない、請求項1に記載の送達システム。
- キャリアガスの第1の流れを送達装置に移送し、前記送達装置は前駆体化合物を収容しており、前記キャリアガスの第1の流れは20℃以上の温度であり;
キャリアガスの第2の流れを前記送達装置の下流の位置に移送し、前記第1の流れのフロー方向および前記第2の流れのフロー方向は互いに対向しておらず;並びに、
前記第1の流れおよび前記第2の流れを一緒にして第3の流れを形成し、前記第3の流れにおける前駆体化合物の蒸気の露点は周囲温度より低い;
ことを含む方法。 - 前記第3の流れに配置されている化学センサーからの信号を第1の圧力/流量調節装置、および/または第2の圧力/流量調節装置に伝達することをさらに含み、前記第1の圧力/流量調節装置が前記第1の流れにおけるキャリアガスの流量を制御するように作動するものであり、並びに前記第2の圧力/流量調節装置が前記第2の流れにおけるキャリアガスの流量を制御するように作動するものである、請求項9に記載の方法。
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