JP2011006779A - 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 - Google Patents
基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 Download PDFInfo
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- JP2011006779A JP2011006779A JP2010065810A JP2010065810A JP2011006779A JP 2011006779 A JP2011006779 A JP 2011006779A JP 2010065810 A JP2010065810 A JP 2010065810A JP 2010065810 A JP2010065810 A JP 2010065810A JP 2011006779 A JP2011006779 A JP 2011006779A
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- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】ガス出口ライン24における気体状混合物中の気化前駆体化合物の濃度を検出し、検出された濃度(c)と参照濃度(c0)とを比較し、濃度差(c−c0)を利用して制御装置29において信号を発生させ、当該信号によりガス制御バルブ23を調節し、気化容器内の全圧力を調節し、温度検出手段は前駆体化合物の温度を検出するように配置され、前駆体化合物の温度を検出し、検出された温度(T)と参照温度(T0)とを比較して温度差(T−T0)を提供し、当該温度差を利用して制御装置29において信号を発生させ、当該信号がガス制御バルブを調節し、気化容器内の全圧力を調節し、ガス出口ラインにおける気体状混合物中での気化前駆体化合物の実質的に一定の濃度を維持する。
【選択図】図2
Description
本発明は、前駆体化合物とキャリアガスとの気体状混合物であって、実質的に一定の濃度の気化前駆体化合物を有する気体状混合物を、1以上の蒸着チャンバー(または反応器)に、好ましくは、複数の反応器に供給する方法を提供する。「実質的に一定の濃度」とは、参照濃度の±1%の気相濃度、好ましくは参照濃度の±0.5%の気相濃度、より好ましくは参照濃度の±0.3%の気相濃度、さらにより好ましくは参照濃度の±0.25%の気相濃度(例えば、10モル%の前駆体濃度設定値については、気相濃度は好ましくは9.975モル%〜10.025モル%の範囲である)を意味する。反応性であってよくまたは非反応性であってよいあらゆる好適なキャリアガスが本発明において使用されうる。キャリアガスの具体的な選択は様々な要因、例えば、使用される前駆体化合物および使用される具体的な化学蒸着システムに依存する。キャリアガスの例としては、限定されないが、水素、ヘリウム、窒素、アルゴンおよびこれらの混合物が挙げられる。水素および窒素が好ましい。
式中、p0は参照圧力であり、c0は参照濃度であり、Bは較正定数である。p0およびc0のそれぞれは制御装置29にプログラムされる。参照濃度c0はガス流れ中の気化前駆体化合物の所望の濃度である。ガス流れ中で実質的に一定の気化前駆体化合物濃度を維持するために、検出された濃度cは、参照濃度c0と実質的に等しいように維持される。
2 流量制御装置
3 前駆体シリンダー
4 温度調節チャンバー
5 ディップチューブ
6 前駆体
7 ガス出口ライン
8 濃度トランスデューサー
9 反応チャンバー
10 電子制御装置
15 気化容器
16 液体前駆体化合物
17 キャリアガス入口
18 ガス出口
19 ディップチューブ
20 ガス出口チューブ
21 温度調節チャンバー
22 供給ライン
23 ガス制御手段(バルブ)
24 ガス出口ライン
25a、25b、25c 反応チャンバー
26 圧力トランスデューサー
28 濃度トランスデューサー
29 制御装置
31 温度センサー
32 圧力開放バルブ
34 気化容器
35 キャリアガス入口
36 ガス出口
37 出口チャンバー
38 入口チャンバー
39 多孔質エレメント
41 固体前駆体化合物
42 温度調節チャンバー
Claims (11)
- (A)気化されるべき前駆体化合物を収容するチャンバーを含みガス入口およびガス出口を有する気化容器、ガス入口と流体連絡しておりキャリアガス制御バルブを有するキャリアガス供給ライン、ガス制御バルブ、並びにガス出口と1以上の蒸着反応器との間を流体連絡しているガス出口ラインを提供し、ガス出口ラインは圧力トランスデューサーおよび濃度トランスデューサーを有し、ガス制御バルブ、圧力トランスデューサーおよび濃度トランスデューサーのそれぞれは制御装置と電気的に接続している工程;
(B)気化前駆体化合物およびキャリアガスを含む気体状混合物を1以上の蒸着反応器に運ぶ工程;
(C)
(1)ガス出口ラインにおける気体状混合物中の気化前駆体化合物の濃度を検出し;
検出された濃度(c)と参照濃度(c0)とを比較して濃度差(c−c0)を提供し;
当該濃度差を利用して制御装置において信号を発生させ;
当該信号をガス制御バルブに伝達して、ガス出口ラインにおける気体状混合物中での気化前駆体化合物の実質的に一定の濃度を維持するために、当該信号がガス制御バルブを調節し、気化容器内の全圧力を調節する工程;
(2)温度検出手段を備えた気化容器を提供し、温度検出手段は前駆体化合物の温度を検出するように配置され;
前駆体化合物の温度を検出し;
検出された温度(T)と参照温度(T0)とを比較して温度差(T−T0)を提供し;
当該温度差を利用して制御装置において信号を発生させ;
当該信号をガス制御バルブに伝達して、ガス出口ラインにおける気体状混合物中での気化前駆体化合物の実質的に一定の濃度を維持するために、当該信号がガス制御バルブを調節し、気化容器内の全圧力を調節する工程;および
(3)工程(1)および(2)の組み合わせ:
からなる群から選択される工程によって、気体状混合物中の前駆体化合物の実質的に一定の濃度を維持する工程;並びに
(d)気体状混合物を、膜堆積に充分な1以上の堆積反応器における条件にかける工程:
を含む、基体上に膜を堆積する方法。 - 前駆体化合物が金属有機化合物である、請求項1に記載の方法。
- 金属有機化合物がメタロイドを含む、請求項4に記載の方法。
- 前駆体化合物がトリメチルガリウム、トリエチルガリウム、トリメチルアルミニウム、トリメチルインジウム、ジメチル亜鉛、シラン、ジクロロシラン、三塩化ホウ素、イソブチルゲルマン、四塩化ゲルマニウムから選択される、請求項1に記載の方法。
- ガス制御バルブがガス供給ラインにある、請求項1に記載の方法。
- 第2ガス制御バルブがガス出口ラインに存在する、請求項7に記載の方法。
- ガス制御バルブがガス出口ラインにある、請求項1に記載の方法。
- 気化されるべき前駆体化合物を収容するチャンバーを含みガス入口およびガス出口を有する気化容器、ガス入口と流体連絡しているキャリアガス供給ライン、およびガス出口と1以上の蒸着反応器との間を流体連絡しているガス出口ライン;ガス制御手段;ガス出口ラインにおける気体状混合物中の気化前駆体化合物の濃度を検出するための、ガス出口ラインにおける検出手段;検出された濃度(c)と参照濃度(c0)とを比較して、濃度差(c−c0)を提供するための手段;当該濃度差を利用する制御装置において信号を発生させるための信号発生手段;並びに、当該信号をガス制御手段に伝達して、ガス出口ラインにおける気体状混合物中での気化前駆体化合物の実質的に一定の濃度を維持するために、当該信号がガス制御手段を調節し、気化容器内の全圧力を調節するための手段;
を含む、キャリアガス中で実質的に一定の濃度の気化前駆体化合物を送達するための装置。 - 気化されるべき前駆体化合物を収容するチャンバーを含みガス入口およびガス出口を有する気化容器、ガス入口と流体連絡しているキャリアガス供給ライン、ガス出口と1以上の蒸着反応器との間を流体連絡しているガス出口ライン、および前駆体化合物の温度を検出するように気化容器内に配置されている温度検出手段;検出された温度(T)と参照温度(T0)とを比較して温度差(T−T0)を提供するための手段;ガス制御手段;当該温度差を利用して圧力制御装置において信号を発生させるための手段;並びに、当該信号をガス制御手段に伝達して、ガス出口ラインにおける気体状混合物中での気化前駆体化合物の実質的に一定の濃度を維持するために、当該信号がガス制御手段を調節し、気化容器内の全圧力を調節するための手段;
を含む、キャリアガス中で実質的に一定の濃度の気化前駆体化合物を送達するための装置。
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- 2010-03-29 CN CN201010157905.1A patent/CN101962757B/zh active Active
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- 2013-08-05 US US13/959,699 patent/US20130312665A1/en not_active Abandoned
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012244167A (ja) * | 2011-05-24 | 2012-12-10 | Rohm & Haas Electronic Materials Llc | 蒸気送達装置、その製造方法およびその使用方法 |
JP2012244168A (ja) * | 2011-05-24 | 2012-12-10 | Rohm & Haas Electronic Materials Llc | 蒸気送達装置、その製造方法およびその使用方法 |
JP2014030015A (ja) * | 2012-07-18 | 2014-02-13 | Rohm & Haas Electronic Materials Llc | 蒸気送達装置、その製造方法およびその使用方法 |
JP2018074166A (ja) * | 2012-07-18 | 2018-05-10 | ケレス テクノロジーズ インコーポレイテッド | 蒸気送達装置、その製造方法およびその使用方法 |
JP2019153805A (ja) * | 2012-07-18 | 2019-09-12 | ケレス テクノロジーズ インコーポレイテッド | 蒸気送達装置、その製造方法およびその使用方法 |
JP2014078632A (ja) * | 2012-10-11 | 2014-05-01 | Toyoko Kagaku Co Ltd | 混合ガス供給装置 |
Also Published As
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US10060030B2 (en) | 2018-08-28 |
KR20100108304A (ko) | 2010-10-06 |
TW201107525A (en) | 2011-03-01 |
CN101962757B (zh) | 2014-05-07 |
US20100285206A1 (en) | 2010-11-11 |
JP5690498B2 (ja) | 2015-03-25 |
US20130312665A1 (en) | 2013-11-28 |
JP5816349B2 (ja) | 2015-11-18 |
CN101962757A (zh) | 2011-02-02 |
EP2233603A1 (en) | 2010-09-29 |
JP2015028216A (ja) | 2015-02-12 |
US20160265113A1 (en) | 2016-09-15 |
US20180334744A1 (en) | 2018-11-22 |
KR101636000B1 (ko) | 2016-07-04 |
EP2233603B1 (en) | 2021-05-12 |
US8501266B2 (en) | 2013-08-06 |
TWI404820B (zh) | 2013-08-11 |
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