JP2012244086A - Led lead frame with reflector, and method of manufacturing semiconductor device using the same - Google Patents

Led lead frame with reflector, and method of manufacturing semiconductor device using the same Download PDF

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JP2012244086A
JP2012244086A JP2011115512A JP2011115512A JP2012244086A JP 2012244086 A JP2012244086 A JP 2012244086A JP 2011115512 A JP2011115512 A JP 2011115512A JP 2011115512 A JP2011115512 A JP 2011115512A JP 2012244086 A JP2012244086 A JP 2012244086A
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reflector
resin
lead frame
resin reflector
led
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JP5741211B2 (en
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Yasuhiro Uchida
泰弘 内田
Tsunaichi Suzuki
綱一 鈴木
Kenzaburo Kawai
研三郎 川合
Yoshinori Murata
佳則 村田
Kazunori Oda
小田　　和範
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Abstract

PROBLEM TO BE SOLVED: To provide an LED lead frame with a reflector that is prevented from warping back to deform even after a resin reflector is formed, and a method of manufacturing a semiconductor device using the lead frame.SOLUTION: An LED lead frame 1 with a reflector includes: a base material 2 having a plurality of mounting regions MA for mounting LED elements 8 which are arranged in matrix, and a resin reflector formation region RA where a resin reflector 3 is provided surrounding circumferences of the plurality of mounting regions MA; a linear resin reflector non-formation part 4 which is positioned on a dicing line DL in the resin reflector formation region RA; and the resin reflector 3 which is provided in a region in the resin reflector formation region RA except the resin reflector non-formation part 4.

Description

本発明は、リフレクタ付きＬＥＤ用リードフレーム及びそれを用いて半導体装置を製造する方法に関する。   The present invention relates to an LED lead frame with a reflector and a method of manufacturing a semiconductor device using the same.

近年、ＬＥＤ（発光ダイオード）素子を基板上に実装した半導体装置が、表示装置のバックライト、各種電気機器や電子機器の表示灯、車載照明、一般照明等に用いられている。このような半導体装置は、一般に、銅基板等の放熱性基板上に電気絶縁層を介して電極を形成し、この電極上にＬＥＤ素子を実装してボンディングした後、透光性樹脂で当該ＬＥＤ素子を埋設するようにして封止した構造を有する。   2. Description of the Related Art In recent years, a semiconductor device in which an LED (light emitting diode) element is mounted on a substrate is used for a backlight of a display device, display lamps of various electric devices and electronic devices, in-vehicle lighting, general lighting, and the like. Such a semiconductor device generally has an electrode formed on a heat-radiating substrate such as a copper substrate via an electrical insulating layer, an LED element is mounted on the electrode and bonded, and then the LED is made of a translucent resin. It has a structure in which the element is embedded and sealed.

このような構成を有する半導体装置は、ＬＥＤ素子を搭載するための複数の搭載領域と、各搭載領域の周囲を取り囲む樹脂リフレクタ形成領域とを有する、銅基板等からなるリードフレームを用意し、当該リードフレームの樹脂リフレクタ形成領域に樹脂リフレクタをトランスファ成型や射出成型等により形成した後、各搭載領域にＬＥＤ素子を実装し、透光性樹脂でＬＥＤ素子を埋設するようにして封止し、その後ＬＥＤ素子ごとにダイシングされ個片化されることにより製造される（特許文献１参照）。   A semiconductor device having such a configuration prepares a lead frame made of a copper substrate or the like having a plurality of mounting regions for mounting LED elements and a resin reflector forming region surrounding the periphery of each mounting region. After forming the resin reflector in the resin reflector formation area of the lead frame by transfer molding, injection molding, etc., mount the LED element in each mounting area, seal it by embedding the LED element with translucent resin, and then Each LED element is manufactured by being diced into individual pieces (see Patent Document 1).

特開２０１０−１８２７７０号公報JP 2010-182770 A

しかしながら、上記のようにしてリードフレームの樹脂リフレクタ形成領域に樹脂リフレクタをトランスファ成型等により形成すると、トランスファ成型等に用いられる金型のキャビティ内に注入された溶融樹脂の硬化収縮に伴い、樹脂リフレクタ形成後のリードフレームが樹脂リフレクタ形成面を内側にして反り返って変形してしまう。このように変形したリードフレームを用いて半導体装置を製造しようとすると、ＬＥＤ素子を実装する工程においてＬＥＤ実装装置のステージ上にリードフレームを載置する際の位置合わせが困難となったり、位置合わせ精度が低下したりする場合があるという問題がある。また、ＬＥＤ素子が実装されたリードフレームをＬＥＤ素子ごとにダイシングする工程においても同様の問題がある。さらに、半導体装置の製造過程における各工程間でのリードフレームの搬送等、リードフレームの取扱性に劣るという問題もある。   However, when the resin reflector is formed in the resin reflector forming region of the lead frame as described above by transfer molding or the like, the resin reflector is accompanied by the curing shrinkage of the molten resin injected into the mold cavity used for transfer molding or the like. The formed lead frame is warped and deformed with the resin reflector forming surface inside. If a semiconductor device is to be manufactured using the lead frame thus deformed, it is difficult to align the lead frame on the stage of the LED mounting device in the process of mounting the LED element, or the alignment is performed. There is a problem that accuracy may be lowered. Further, there is a similar problem in the process of dicing the lead frame on which the LED element is mounted for each LED element. Furthermore, there is also a problem that the handling of the lead frame is inferior, such as transport of the lead frame between processes in the manufacturing process of the semiconductor device.

また、樹脂リフレクタ形成後のリードフレームが反り返って変形してしまうことにより、リードフレーム上に形成された樹脂リフレクタが剥離してしまったり、当該樹脂リフレクタに亀裂が生じてしまったりするという問題もある。さらに、光の反射効率を向上させる目的で、ＬＥＤ素子を実装する基材上に薄膜の銀めっき層等からなる反射層が形成されることがあるが、この場合においても、樹脂リフレクタ形成後のリードフレームの反り返りにより、当該反射層が剥離してしまったり、当該反射層に亀裂が生じてしまったりするという問題もある。   In addition, since the lead frame after the resin reflector is formed is warped and deformed, the resin reflector formed on the lead frame may be peeled off or the resin reflector may be cracked. . Furthermore, for the purpose of improving the light reflection efficiency, a reflective layer made of a thin silver plating layer or the like may be formed on the substrate on which the LED element is mounted. There is also a problem that the reflective layer peels off due to the warping of the lead frame, or cracks occur in the reflective layer.

上記のような課題に鑑みて、本発明は、樹脂リフレクタを形成した後においてもリードフレームの反り返りによる変形を防止することのできるリフレクタ付きＬＥＤ用リードフレーム、及び当該リードフレームを用いた半導体装置の製造方法を提供することを目的とする。   In view of the problems as described above, the present invention provides an LED lead frame with a reflector that can prevent deformation due to warping of the lead frame even after a resin reflector is formed, and a semiconductor device using the lead frame. An object is to provide a manufacturing method.

上記課題を解決するために、本発明は、マトリックス状に配列されてなる、ＬＥＤ素子を搭載するための複数の搭載領域、及び前記複数の搭載領域のそれぞれの周囲を取り囲むように樹脂リフレクタが設けられる樹脂リフレクタ形成領域を有する基材と、前記樹脂リフレクタ形成領域中のダイシングライン上に位置する線状の樹脂リフレクタ非形成部と、前記樹脂リフレクタ形成領域中の前記樹脂リフレクタ非形成部を除く領域に設けられてなる樹脂リフレクタとを備えることを特徴とするリフレクタ付きＬＥＤ用リードフレームを提供する（発明１）。   In order to solve the above problems, the present invention provides a plurality of mounting areas for mounting LED elements arranged in a matrix, and a resin reflector so as to surround each of the plurality of mounting areas. A base material having a resin reflector forming region, a linear resin reflector non-forming portion located on a dicing line in the resin reflector forming region, and a region excluding the resin reflector non-forming portion in the resin reflector forming region A lead frame for an LED with a reflector is provided (Invention 1).

上記発明（発明１）においては、前記樹脂リフレクタは、前記樹脂リフレクタ非形成部により、相互に接触しない複数の樹脂リフレクタ小領域に分割されており、前記樹脂リフレクタ小領域は、少なくとも１つの前記搭載領域を含むのが好ましい（発明２）。   In the said invention (invention 1), the said resin reflector is divided | segmented into the some resin reflector small area | region which does not contact mutually by the said resin reflector non-formation part, The said resin reflector small area | region is at least 1 said mounting A region is preferably included (Invention 2).

上記発明（発明１，２）においては、前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の最外周に位置する一の部位から当該最外周に位置する他の部位まで連続するのが好ましい（発明３）。   In the said invention (invention 1 and 2), it is preferable that the said resin reflector non-formation part continues from one site | part located in the outermost periphery of the said resin reflector formation area to the other site | part located in the said outermost periphery ( Invention 3).

上記発明（発明１〜３）においては、前記樹脂リフレクタ形成領域は、略方形状に構成されており、前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の対向する二辺間を直線状に連続するのが好ましく（発明４）、かかる発明（発明４）においては、前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の対向する二辺間を直線状に連続するとともに、前記樹脂リフレクタ形成領域の対向する他の二辺間を直線状に連続するのが好ましい（発明５）。   In the said invention (invention 1-3), the said resin reflector formation area is comprised by the substantially square shape, and the said resin reflector non-formation part is linear between the two sides which the said resin reflector formation area opposes. Preferably, it is continuous (Invention 4), and in this invention (Invention 4), the resin reflector non-formation part is linearly continuous between two opposing sides of the resin reflector formation region, and the resin reflector is formed. It is preferable that the other two opposite sides of the region continue in a straight line (Invention 5).

上記発明（発明１〜５）においては、前記樹脂リフレクタ非形成部の短手方向の幅が、０．１〜２ｍｍであるのが好ましい（発明６）。   In the said invention (invention 1-5), it is preferable that the width | variety of the transversal direction of the said resin reflector non-formation part is 0.1-2 mm (invention 6).

また、本発明は、上記発明（発明１〜６）に係るリフレクタ付きＬＥＤ用リードフレームにおける前記搭載領域上にＬＥＤ素子を実装する工程と、前記搭載領域上に実装された前記ＬＥＤ素子を封止樹脂により封止する工程と、前記搭載領域上に実装された前記ＬＥＤ素子が前記封止樹脂により封止された前記ＬＥＤ用リードフレームを前記ダイシングラインに沿って切断する工程とを含むことを特徴とする半導体装置の製造方法を提供する（発明７）。   Moreover, this invention seals the LED element mounted on the said mounting area | region, the process of mounting an LED element on the said mounting area | region in the LED lead frame with a reflector which concerns on the said invention (invention 1-6). A step of sealing with a resin, and a step of cutting the LED lead frame in which the LED element mounted on the mounting region is sealed with the sealing resin along the dicing line. A method for manufacturing a semiconductor device is provided (Invention 7).

本発明によれば、樹脂リフレクタを形成した後においてもリードフレームの反り返りによる変形を防止することのできるリフレクタ付きＬＥＤ用リードフレーム、及び当該リードフレームを用いた半導体装置の製造方法を提供することができる。   According to the present invention, it is possible to provide a lead frame for an LED with a reflector that can prevent deformation due to warping of the lead frame even after the resin reflector is formed, and a method for manufacturing a semiconductor device using the lead frame. it can.

図１は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを示す部分平面図である。FIG. 1 is a partial plan view showing an LED lead frame with a reflector according to an embodiment of the present invention. 図２は、本発明の一実施形態における基材を示す部分平面図である。FIG. 2 is a partial plan view showing a base material in one embodiment of the present invention. 図３は、図１に示す本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームのＡ−Ａ線における部分断面図である。FIG. 3 is a partial cross-sectional view taken along line AA of the LED lead frame with reflector according to the embodiment of the present invention shown in FIG. 図４は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを用いた半導体装置の製造方法を示す工程フロー図である。FIG. 4 is a process flow diagram illustrating a method for manufacturing a semiconductor device using a LED lead frame with a reflector according to an embodiment of the present invention. 図５は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームにおける樹脂リフレクタ非形成部の他の構成例（その１）を示す平面図である。FIG. 5: is a top view which shows the other structural example (the 1) of the resin reflector non-formation part in the lead frame for LED with a reflector which concerns on one Embodiment of this invention. 図６は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームにおける樹脂リフレクタ非形成部の他の構成例（その２）を示す平面図である。FIG. 6 is a plan view showing another configuration example (No. 2) of the resin reflector non-forming portion in the LED lead frame with reflector according to the embodiment of the present invention. 図７は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームにおける樹脂リフレクタ非形成部の他の構成例（その３）を示す部分断面図である。FIG. 7: is a fragmentary sectional view which shows the other structural example (the 3) of the resin reflector non-formation part in the lead frame for LED with a reflector which concerns on one Embodiment of this invention. 図８は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを用いて製造された半導体装置の他の構成例（その１）を示す断面図である。FIG. 8: is sectional drawing which shows the other structural example (the 1) of the semiconductor device manufactured using the LED lead frame with a reflector which concerns on one Embodiment of this invention. 図９は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを用いて製造された半導体装置の他の構成例（その２）を示す断面図である。FIG. 9: is sectional drawing which shows the other structural example (the 2) of the semiconductor device manufactured using the LED lead frame with a reflector which concerns on one Embodiment of this invention. 図１０は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームにおける基材の他の構成例を示す部分断面図である。FIG. 10 is a partial cross-sectional view showing another configuration example of the base material in the LED lead frame with reflector according to the embodiment of the present invention.

本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを、図面を参照しながら説明する。図１は、本発明の一実施形態に係るリフレクタ付きＬＥＤ用リードフレームを示す部分平面図であり、図２は、本発明の一実施形態における基材を示す部分平面図であり、図３は、図１に示すリフレクタ付きＬＥＤ用リードフレームのＡ−Ａ線における部分断面図である。   An LED lead frame with a reflector according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a partial plan view showing an LED lead frame with a reflector according to an embodiment of the present invention, FIG. 2 is a partial plan view showing a base material according to an embodiment of the present invention, and FIG. FIG. 2 is a partial cross-sectional view taken along line AA of the LED lead frame with reflector shown in FIG. 1.

図１〜３に示すように、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１は、ＬＥＤ素子を搭載するための複数の搭載領域ＭＡ及び複数の搭載領域ＭＡのそれぞれを取り囲むようにして樹脂リフレクタ３が形成される樹脂リフレクタ形成領域ＲＡを有する平板状の基材２と、樹脂リフレクタ形成領域ＲＡに形成されてなる樹脂リフレクタ３と、樹脂リフレクタ形成領域におけるダイシングラインＤＬ上に位置する線状の樹脂リフレクタ非形成部４とを備える。   As shown in FIGS. 1 to 3, the LED lead frame 1 with reflector according to this embodiment includes a plurality of mounting areas MA for mounting LED elements and a resin reflector so as to surround each of the mounting areas MA. 3 is formed on the resin reflector 3 formed in the resin reflector forming region RA, and the linear shape located on the dicing line DL in the resin reflector forming region. The resin reflector non-formation part 4 is provided.

基材２としては、従来公知のリードフレーム用基材を用いることができ、例えば、銅、銅合金、４２合金（ニッケル４１％の鉄合金）等の金属基材；セラミックス、ガラス等の電気絶縁性基材表面に導電性材料層を設けてなる複合基材等や、所望によりそれらの基材の一方の面に銀めっき層を含む反射層を備えるものを用いることができ、基材２の放熱性の観点から金属基材を用いるのが好ましい。なお、本実施形態においては、基材２として金属基材を例に挙げて説明する。   As the base material 2, a conventionally known lead frame base material can be used, for example, a metal base material such as copper, copper alloy, 42 alloy (nickel 41% iron alloy); electrical insulation such as ceramics, glass, etc. A composite base material provided with a conductive material layer on the surface of the conductive base material, or a material provided with a reflective layer including a silver plating layer on one surface of those base materials can be used if desired. It is preferable to use a metal substrate from the viewpoint of heat dissipation. In the present embodiment, a metal substrate will be described as an example of the substrate 2.

基材２の大きさは、各搭載領域ＭＡに実装されるＬＥＤ素子の大きさ、各搭載領域ＭＡのピッチ等に応じて適宜設計されることができ、例えば、５５ｍｍ×５０ｍｍ程度、又はそれ以上の大きさである。また、基材２の厚みは、例えば、０．０５〜０．５ｍｍ程度である。   The size of the substrate 2 can be appropriately designed according to the size of the LED elements mounted in each mounting area MA, the pitch of each mounting area MA, and the like, for example, about 55 mm × 50 mm or more. Is the size of Moreover, the thickness of the base material 2 is about 0.05-0.5 mm, for example.

ＬＥＤ素子を搭載するための搭載領域ＭＡは、基材２上の樹脂リフレクタ形成領域ＲＡに樹脂リフレクタ３を設けた際に基材２表面が露出する略長円形状又は略方形状の領域であり、基材２上に所定のピッチでマトリックス状（複数行×複数列）に配列されている。基材２上における搭載領域ＭＡの数は、特に限定されるものではなく、基材２の大きさ、ＬＥＤ素子の大きさ、各搭載領域ＭＡのピッチ等に応じて適宜設定することができる。各搭載領域ＭＡのピッチは、ＬＥＤ素子の大きさ等に応じて適宜設定することができるが、例えば、１．２〜８ｍｍ程度である。ここで、搭載領域ＭＡのピッチとは、縦方向又は横方向に隣接する２つの搭載領域ＭＡの中心点間の距離を意味する。なお、ＬＥＤ素子からの発光の反射効率を向上させることを目的として、基材２の少なくとも各搭載領域ＭＡ上に銀めっき層等からなる反射層（厚み３μｍ程度）が電気めっき等により形成されていてもよい。   The mounting area MA for mounting the LED element is a substantially oval or substantially rectangular area where the surface of the substrate 2 is exposed when the resin reflector 3 is provided in the resin reflector forming area RA on the substrate 2. These are arranged in a matrix (a plurality of rows and a plurality of columns) at a predetermined pitch on the substrate 2. The number of mounting areas MA on the base material 2 is not particularly limited, and can be appropriately set according to the size of the base material 2, the size of the LED elements, the pitch of each mounting area MA, and the like. The pitch of each mounting area MA can be set as appropriate according to the size of the LED elements, and is, for example, about 1.2 to 8 mm. Here, the pitch of the mounting area MA means a distance between the center points of two mounting areas MA adjacent in the vertical direction or the horizontal direction. For the purpose of improving the reflection efficiency of light emission from the LED element, a reflective layer (thickness of about 3 μm) made of a silver plating layer or the like is formed by electroplating or the like on at least each mounting region MA of the base material 2. May be.

基材２には、縦方向（又は横方向）に並列する複数の搭載領域ＭＡを縦断（又は横断）するようにして貫通スリット５が形成されており、樹脂リフレクタ形成領域ＲＡにおけるダイシングラインＤＬ上に複数の貫通孔６が形成されている。搭載領域ＭＡを縦断（又は横断）する貫通スリット５が形成されていることで、搭載領域ＭＡが大面積の第１リード部７１及び小面積の第２リード部７２に分割され、ダイシングされて個片化されて得られる半導体装置において、それらを電気的に独立したものとすることができる。また、ダイシングラインＤＬ上に複数の貫通孔６が形成されていることで、ダイシングすべき金属量を少なくすることができるため、ダイシングブレードにかかる負荷を低減することができるとともに、上金型及び下金型を用いて基材２をクランプし、金型のキャビティ内に樹脂を流し込んで硬化させることで樹脂リフレクタ３を形成するときに、当該貫通孔６を介して樹脂リフレクタ形成領域ＲＡに位置するキャビティのすべてに樹脂を行き渡らせることができる。貫通スリット５の狭幅部の短手方向の幅Ｗ１は、特に限定されるものではないが、例えば、２００〜６００μｍの範囲で適宜設定することができる。なお、貫通スリット５及び貫通孔６には、樹脂リフレクタ３と同一の樹脂材料が充填されている。   A through slit 5 is formed in the base material 2 so as to cut (or cross) a plurality of mounting areas MA arranged in parallel in the vertical direction (or horizontal direction), and on the dicing line DL in the resin reflector forming area RA. A plurality of through-holes 6 are formed. By forming the through-slit 5 that vertically cuts (or crosses) the mounting area MA, the mounting area MA is divided into a first lead portion 71 having a large area and a second lead portion 72 having a small area, and is diced into individual pieces. In a semiconductor device obtained by singulation, they can be electrically independent. Further, since the plurality of through holes 6 are formed on the dicing line DL, the amount of metal to be diced can be reduced, so that the load on the dicing blade can be reduced, and the upper mold and When the resin reflector 3 is formed by clamping the base material 2 using the lower mold and pouring the resin into the mold cavity to be cured, the resin reflector 3 is positioned through the through hole 6 in the resin reflector formation region RA. You can distribute the resin to all of the cavities. The width W1 in the short direction of the narrow width portion of the through slit 5 is not particularly limited, but can be appropriately set within a range of 200 to 600 μm, for example. The through slit 5 and the through hole 6 are filled with the same resin material as that of the resin reflector 3.

樹脂リフレクタ３は、各搭載領域ＭＡの周囲を取り囲むように、かつ当該搭載領域ＭＡを露出させるようにして、樹脂リフレクタ形成領域ＲＡに設けられる。本実施形態においては、樹脂リフレクタ形成領域ＲＡ内のダイシングラインＤＬ上の少なくとも一部に線状の樹脂リフレクタ非形成部４が位置することで、樹脂リフレクタ３は、樹脂リフレクタ非形成部４を介して相互に接触しない複数の樹脂リフレクタ小領域３１に分割されている。なお、各樹脂リフレクタ小領域３１には、少なくとも１個の搭載領域ＭＡ（本実施形態においては２又は４個の搭載領域ＭＡ）が含まれる。   The resin reflector 3 is provided in the resin reflector formation region RA so as to surround the periphery of each mounting region MA and to expose the mounting region MA. In the present embodiment, the linear resin reflector non-formation part 4 is located at least partly on the dicing line DL in the resin reflector formation region RA, so that the resin reflector 3 is interposed via the resin reflector non-formation part 4. Thus, it is divided into a plurality of small resin reflector areas 31 that do not contact each other. Each resin reflector small area 31 includes at least one mounting area MA (in this embodiment, two or four mounting areas MA).

樹脂リフレクタ３の内側壁面３２は、内側壁面３２により囲まれた空間７０が上方に向けて拡径するように傾斜している。これにより、樹脂リフレクタ３がＬＥＤ素子からの発光を上方に効率的に反射する機能を果たすことができる。   The inner wall surface 32 of the resin reflector 3 is inclined so that the space 70 surrounded by the inner wall surface 32 increases in diameter upward. Thereby, the resin reflector 3 can fulfill the function of efficiently reflecting the light emitted from the LED element upward.

樹脂リフレクタ３の上底面３３の幅（縦方向（又は横方向）に隣接する２つの搭載領域ＭＡの中心点を結ぶ線上における上底面３３の幅であって、樹脂リフレクタ非形成部４の存在しない部分の幅）Ｗ２は、樹脂リフレクタ非形成部４の短手方向の幅Ｗ３、リフレクタ付きＬＥＤ用リードフレーム１における樹脂リフレクタ３の強度、縦方向（又は横方向）に隣接する搭載領域ＭＡのピッチ等に応じて適宜設定することができる。   The width of the upper bottom surface 33 on the line connecting the center points of the two mounting areas MA adjacent to the width (vertical direction (or horizontal direction) of the upper bottom surface 33 of the resin reflector 3, and no resin reflector non-forming portion 4 exists. The width W2 of the portion is the width W3 in the short direction of the resin reflector non-forming portion 4, the strength of the resin reflector 3 in the LED lead frame 1 with reflector, and the pitch of the mounting area MA adjacent in the vertical direction (or horizontal direction). It can set suitably according to etc.

なお、樹脂リフレクタ３を構成する樹脂材料としては、電気絶縁性を有する材料であれば特に制限されるものではなく、例えば、ポリフタルアミド、エポキシ、シリコーン、液晶高分子等の１種又は２種以上を組み合わせて用いることができる。   The resin material constituting the resin reflector 3 is not particularly limited as long as it is an electrically insulating material. For example, one or two kinds of materials such as polyphthalamide, epoxy, silicone, and liquid crystal polymer are used. A combination of the above can be used.

本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１は、略方形状の樹脂リフレクタ形成領域ＲＡの対向する二辺間をダイシングラインＤＬに沿って直線状に連続し、かつ他の対向する二辺間をダイシングラインＤＬに沿って直線状に連続する樹脂リフレクタ非形成部４を有する。すなわち、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１は、ダイシングラインＤＬ上に位置する格子状の樹脂リフレクタ非形成部４を有する。ＬＥＤ用リードフレームの一表面に射出成型、トランスファ成型等により樹脂リフレクタを形成すると、樹脂材料の硬化収縮により基材２が反り返って変形してしまうが、樹脂リフレクタ非形成部４を有することで、樹脂リフレクタ３を構成する樹脂材料の硬化収縮に起因する応力ひずみを低減することができ、樹脂リフレクタ３を設けてなるリフレクタ付きＬＥＤ用リードフレーム１の反り返りによる変形を抑制することができる。   The LED lead frame 1 with a reflector according to the present embodiment has a continuous linear shape along the dicing line DL between two opposing sides of the substantially rectangular resin reflector forming region RA, and between the other two opposing sides. The resin reflector non-forming part 4 is linearly continuous along the dicing line DL. That is, the LED lead frame 1 with a reflector according to the present embodiment includes a lattice-shaped resin reflector non-forming portion 4 located on the dicing line DL. When the resin reflector is formed on one surface of the LED lead frame by injection molding, transfer molding or the like, the base material 2 is warped and deformed due to curing shrinkage of the resin material, but by having the resin reflector non-forming part 4, The stress distortion resulting from the curing shrinkage of the resin material constituting the resin reflector 3 can be reduced, and the deformation due to the warp of the LED lead frame 1 with the reflector provided with the resin reflector 3 can be suppressed.

樹脂リフレクタ非形成部４の短手方向の幅（樹脂リフレクタ非形成部４における基材２表面上の幅）Ｗ３は、０．１〜２ｍｍであるのが好ましく、０．２〜０．６ｍｍであるのがより好ましい。当該幅Ｗ３が０．１ｍｍ未満であると、リフレクタ付きＬＥＤ用リードフレーム１を用いた半導体装置の製造過程において、ダイシング装置を用いてダイシングラインＤＬに沿ってリフレクタ付きＬＥＤ用リードフレーム１をダイシングする際に、当該幅Ｗ３がダイシング装置のダイシングブレードの幅よりも小さいために樹脂の削りカスが発生し、得られる半導体装置の特性が低下してしまうおそれがあり、また狭小な幅Ｗ３の樹脂リフレクタ非形成部４を設けるための金型の製造コストが増大し、それに伴いリフレクタ付きＬＥＤ用リードフレーム１を用いて得られる半導体装置の製造コストが増大してしまうおそれがある。また、当該幅Ｗ３が２ｍｍを超えると、リフレクタ付きＬＥＤ用リードフレーム１上の搭載領域ＭＡのピッチを広げる必要があり、１枚のリフレクタ付きＬＥＤ用リードフレーム１から得られる半導体装置の数が減少するおそれがある。   The width in the lateral direction of the resin reflector non-forming part 4 (width on the surface of the base material 2 in the resin reflector non-forming part 4) W3 is preferably 0.1 to 2 mm, and preferably 0.2 to 0.6 mm. More preferably. When the width W3 is less than 0.1 mm, the LED lead frame 1 with reflector is diced along the dicing line DL using the dicing device in the manufacturing process of the semiconductor device using the LED lead frame 1 with reflector. At this time, since the width W3 is smaller than the width of the dicing blade of the dicing apparatus, there is a possibility that resin scraps may be generated, and the characteristics of the obtained semiconductor device may be deteriorated. Also, the resin reflector having a narrow width W3 The manufacturing cost of the mold for providing the non-forming part 4 increases, and the manufacturing cost of the semiconductor device obtained using the LED lead frame 1 with a reflector may increase accordingly. If the width W3 exceeds 2 mm, it is necessary to increase the pitch of the mounting area MA on the LED lead frame 1 with a reflector, and the number of semiconductor devices obtained from one LED lead frame 1 with a reflector decreases. There is a risk.

樹脂リフレクタ形成領域ＲＡの面積に対する、樹脂リフレクタ非形成部４により露出する基材２表面の合計面積の面積率は、２〜３５％であるのが好ましく、１０〜３５％であるのがより好ましく、１５〜３５％であるのが特に好ましい。当該面積率が２％未満であると、樹脂リフレクタ３を構成する樹脂材料の硬化収縮に起因する応力ひずみを効果的に低減することが困難となり、リフレクタ付きＬＥＤ用リードフレーム１の反り返りによる変形を抑制するのが困難となるおそれがある。また、当該面積率が３５％を超えると、リフレクタ付きＬＥＤ用リードフレーム１の反り返りによる変形を抑制することができるものの、リフレクタ付きＬＥＤ用リードフレーム１における樹脂リフレクタ非形成部４に隣接する部分の樹脂リフレクタ３の幅が低減してしまい、かかるリフレクタ付きＬＥＤ用リードフレーム１を用いて得られる半導体装置に欠陥が生じるおそれがある。半導体装置における欠陥の発生を防止すべく、当該樹脂リフレクタ３の幅を増大させると、搭載領域ＭＡのピッチが増大することになり、結果として１枚のリフレクタ付きＬＥＤ用リードフレーム１から得られる半導体装置の数が減少し、製造歩留まりが低下してしまう。   The area ratio of the total area of the surface of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector formation region RA is preferably 2 to 35%, and more preferably 10 to 35%. It is particularly preferably 15 to 35%. If the area ratio is less than 2%, it becomes difficult to effectively reduce the stress strain due to the curing shrinkage of the resin material constituting the resin reflector 3, and the LED lead frame 1 with the reflector is deformed by warping. May be difficult to suppress. Further, when the area ratio exceeds 35%, deformation due to warping of the LED lead frame 1 with a reflector can be suppressed, but the portion adjacent to the resin reflector non-forming portion 4 in the LED lead frame 1 with a reflector can be suppressed. The width | variety of the resin reflector 3 will reduce, and there exists a possibility that a defect may arise in the semiconductor device obtained using this lead frame 1 for LED with a reflector. When the width of the resin reflector 3 is increased in order to prevent the occurrence of defects in the semiconductor device, the pitch of the mounting area MA increases, and as a result, the semiconductor obtained from one LED lead frame 1 with a reflector is obtained. The number of devices decreases and the manufacturing yield decreases.

このような構成を有するリフレクタ付きＬＥＤ用リードフレーム１は、樹脂リフレクタ３（樹脂リフレクタ小領域３１）及び樹脂リフレクタ非形成部４を形成するための所定のキャビティを有する上金型及び下金型を用いて基材２を両面からクランプし、上金型及び下金型を４０〜１８５℃程度に加熱した状態で射出成型、トランスファ成型等により樹脂材料を流し込み、その後上金型及び下金型を冷却して当該樹脂材料を硬化させることにより、基材２の樹脂リフレクタ形成領域ＲＡに樹脂リフレクタ３（樹脂リフレクタ小領域３１）を設けることで製造することができる。このときに、樹脂リフレクタ非形成部４に対応する上金型の構造部が基材２のダイシングラインＤＬ上に位置するようにして、基材２が上金型及び下金型によりクランプされるため、ダイシングラインＤＬ上に樹脂リフレクタ非形成部４を有するリフレクタ付きＬＥＤ用リードフレーム１を製造することができる。   The LED lead frame 1 with a reflector having such a configuration includes an upper die and a lower die having predetermined cavities for forming the resin reflector 3 (resin reflector small region 31) and the resin reflector non-forming portion 4. The base material 2 is clamped from both sides, and a resin material is poured by injection molding, transfer molding or the like while the upper mold and the lower mold are heated to about 40 to 185 ° C., and then the upper mold and the lower mold are used. The resin material can be manufactured by providing the resin reflector 3 (resin reflector small region 31) in the resin reflector forming region RA of the base material 2 by cooling and curing the resin material. At this time, the base material 2 is clamped by the upper die and the lower die so that the structure portion of the upper die corresponding to the resin reflector non-forming portion 4 is positioned on the dicing line DL of the base material 2. Therefore, the LED lead frame 1 with a reflector having the resin reflector non-forming portion 4 on the dicing line DL can be manufactured.

このようにして得られたリフレクタ付きＬＥＤ用リードフレーム１は、樹脂リフレクタ３が樹脂リフレクタ非形成部４により相互に接触しない複数の樹脂リフレクタ小領域３１に分割されているため、樹脂の硬化収縮に起因する応力ひずみが低減され、基材２の反り返りによる変形を抑制することができる。具体的には、三次元測定機（ミツトヨ社製，製品名：Crysta-Plus M776）を用いて測定したリフレクタ付きＬＥＤ用リードフレーム１の反り量（リフレクタ付きＬＥＤ用リードフレーム１の中心を基準としたときの、当該リフレクタ付きＬＥＤ用リードフレーム１のＺ軸方向（基材２に対する垂直方向）における最大変位量）を、樹脂リフレクタ非形成部４を有しないリフレクタ付きＬＥＤ用リードフレームの反り量に対して７５％以下にすることができる。その結果として、リフレクタ付きＬＥＤ用リードフレーム１を用いた半導体装置の製造過程において樹脂リフレクタ３や所望により設けられる反射層の剥離、亀裂の発生等を抑制することができるとともに、当該製造過程のＬＥＤ素子実装工程やダイシング工程における位置合わせを容易に行うことができるとともに、位置合わせ精度を向上させることができるという効果も奏し得る。   In the LED lead frame 1 with a reflector thus obtained, the resin reflector 3 is divided into a plurality of resin reflector small areas 31 that are not in contact with each other by the resin reflector non-forming portion 4, so that the resin is cured and contracted. The resulting stress strain is reduced, and deformation due to warping of the substrate 2 can be suppressed. Specifically, the amount of warpage of the LED lead frame 1 with a reflector measured with a three-dimensional measuring machine (product name: Crysta-Plus M776, manufactured by Mitutoyo Corporation) (based on the center of the LED lead frame 1 with a reflector) The maximum amount of displacement in the Z-axis direction (perpendicular to the base material 2) of the LED lead frame 1 with the reflector is the amount of warpage of the LED lead frame with the reflector that does not have the resin reflector non-forming portion 4. On the other hand, it can be 75% or less. As a result, in the manufacturing process of the semiconductor device using the LED lead frame 1 with the reflector, it is possible to suppress the peeling of the resin reflector 3 and the reflection layer provided as desired, the generation of cracks, and the like, and the LED in the manufacturing process. The positioning in the element mounting process and the dicing process can be easily performed, and the effect that the positioning accuracy can be improved can be achieved.

次に、上述したリフレクタ付きＬＥＤ用リードフレーム１を用いた半導体装置の製造方法を説明する。図４は、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１を用いた半導体装置の製造方法を示す工程フロー図である。   Next, a method for manufacturing a semiconductor device using the above-described LED lead frame 1 with a reflector will be described. FIG. 4 is a process flow diagram showing a method for manufacturing a semiconductor device using the LED lead frame 1 with a reflector according to the present embodiment.

図４に示すように、まず、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１を準備し（図４（Ａ））、当該リフレクタ付きＬＥＤ用リードフレーム１の第１リード部７１にＬＥＤ素子８の一の端子（図示せず）を接続し（図４（Ｂ））、第２リード部７２にＬＥＤ素子８の他の端子部８ｂをボンディングワイヤ８１により接続する（図４（Ｃ））。このとき、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１（基材２）の反り返りによる変形が抑制されていることで、例えばワイヤーボンダー等のステージ上にリフレクタ付きＬＥＤ用リードフレーム１を載置する際の位置合わせを容易に行うことができるとともに、位置合わせ精度を向上させることができる。   As shown in FIG. 4, first, the LED lead frame 1 with reflector according to the present embodiment is prepared (FIG. 4A), and the LED element 8 is attached to the first lead portion 71 of the LED lead frame 1 with reflector. One terminal (not shown) is connected (FIG. 4B), and the other terminal portion 8b of the LED element 8 is connected to the second lead portion 72 by a bonding wire 81 (FIG. 4C). At this time, the LED lead frame 1 with a reflector is placed on a stage such as a wire bonder because the deformation of the LED lead frame 1 with a reflector 1 (base material 2) according to the present embodiment is suppressed from warping. Alignment can be easily performed, and alignment accuracy can be improved.

次いで、ＬＥＤ素子８を搭載した搭載領域ＭＡ上の樹脂リフレクタ３の内側壁面３２で囲まれる空間７０内に封止樹脂９を充填し、ＬＥＤ素子８及びボンディングワイヤ８１を封止する（図４（Ｄ））。封止樹脂９としては、熱や光による変色、透光性の劣化等に対する耐久性に優れた樹脂材料を用いるのが好ましく、例えば、シリコーン樹脂やエポキシ樹脂と、蛍光物質、シリカ、アルミナ、酸化チタン等の拡散材料の１種又は２種以上とを含むものを用いることができる。   Next, the sealing resin 9 is filled in the space 70 surrounded by the inner wall surface 32 of the resin reflector 3 on the mounting area MA on which the LED element 8 is mounted, and the LED element 8 and the bonding wire 81 are sealed (FIG. 4 ( D)). As the sealing resin 9, it is preferable to use a resin material excellent in durability against discoloration due to heat or light, deterioration of translucency, etc. For example, silicone resin or epoxy resin, fluorescent substance, silica, alumina, oxidation The thing containing 1 type, or 2 or more types of diffusion materials, such as titanium, can be used.

その後、ダイシングラインＤＬに沿ってダイシングすることにより個片化された半導体装置１０を得ることができる（図４（Ｅ））。このダイシングをする工程（図４（Ｅ））において、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１（基材２）の反り返りによる変形が抑制されていることで、ダイシング装置等のステージ上にリフレクタ付きＬＥＤ用リードフレーム１を載置する際の位置合わせを容易に行うことができるとともに、位置合わせ精度をも向上させることができる。   After that, dicing along the dicing line DL can obtain the separated semiconductor device 10 (FIG. 4E). In the dicing step (FIG. 4E), deformation due to warping of the LED lead frame 1 (base material 2) with a reflector according to the present embodiment is suppressed, so that it is placed on a stage such as a dicing apparatus. Positioning can be easily performed when the LED lead frame 1 with a reflector is placed, and the positioning accuracy can be improved.

上述したように、本実施形態に係るリフレクタ付きＬＥＤ用リードフレーム１によれば、基材２上の樹脂リフレクタ３が樹脂リフレクタ非形成部４により複数の樹脂リフレクタ小領域３１に分割されていることで、樹脂の硬化収縮に起因する応力ひずみを低減することができるため、リフレクタ付きＬＥＤ用リードフレーム１（基材２）の反り返りによる変形を抑制することができる。したがって、リフレクタ付きＬＥＤ用リードフレーム１（基材２）の反り返りによる樹脂リフレクタ３（樹脂リフレクタ小領域３１）等の剥離・亀裂の発生等を防止することができるとともに、当該リフレクタ付きＬＥＤ用リードフレーム１を用いた半導体装置１０の製造過程において、ワイヤーボンダー（ＬＥＤ素子実装装置）やダイシング装置等のステージ上に当該リフレクタ付きＬＥＤ用リードフレーム１を載置する際の位置合わせを容易に行うことができるとともに、当該位置合わせ精度を向上させることができる。   As described above, according to the LED lead frame 1 with reflector according to the present embodiment, the resin reflector 3 on the base material 2 is divided into the plurality of resin reflector small regions 31 by the resin reflector non-forming portion 4. Therefore, since the stress distortion resulting from the hardening shrinkage | contraction of resin can be reduced, the deformation | transformation by the curvature of the LED lead frame 1 (base material 2) with a reflector can be suppressed. Therefore, it is possible to prevent the resin reflector 3 (resin reflector small region 31) and the like from peeling and cracking due to the warping of the LED lead frame 1 with reflector (base material 2), and the LED lead frame with reflector. In the manufacturing process of the semiconductor device 10 using 1, the LED lead frame 1 with a reflector can be easily aligned on a stage such as a wire bonder (LED element mounting device) or a dicing device. In addition, the alignment accuracy can be improved.

以上説明した実施形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記実施形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。   The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

上記実施形態において、リフレクタ付きＬＥＤ用リードフレーム１は、格子状の樹脂リフレクタ非形成部４を有し、樹脂リフレクタ小領域３１がマトリックス状に配設されているが、これに限定されるものではなく、例えば、縦方向又は横方向に連続する直線状の樹脂リフレクタ非形成部４を少なくとも１つ有していてもよい。また、図５に示すように、リフレクタ付きＬＥＤ用リードフレーム１は、環状の樹脂リフレクタ非形成部４を有していてもよいし、図６に示すように、鉤状の樹脂リフレクタ非形成部４を有していてもよい。さらに、断続的な樹脂リフレクタ非形成部４を有していてもよい。   In the embodiment described above, the LED lead frame 1 with a reflector has the lattice-shaped resin reflector non-forming portion 4 and the resin reflector small regions 31 are arranged in a matrix, but the present invention is not limited to this. For example, you may have at least 1 linear resin reflector non-formation part 4 which continues in the vertical direction or a horizontal direction. Moreover, as shown in FIG. 5, the LED lead frame 1 with a reflector may have an annular resin reflector non-formation part 4, or as shown in FIG. 6, a bowl-shaped resin reflector non-formation part. 4 may be included. Furthermore, you may have the intermittent resin reflector non-formation part 4. FIG.

上記実施形態において、樹脂リフレクタ小領域３１の外側壁面３１ａは、基材２表面に対して略垂直に立設されているが、これに限定されるものではなく、例えば、図７に示すように、樹脂リフレクタ非形成部４の短手方向の幅Ｗ３が上方に向けて広がるように、樹脂リフレクタ小領域３１の外側壁面３１ａが傾斜していてもよい。この場合において、基材２表面の垂直方向に対する外側壁面３１ａのなす角度（傾斜角度）θは、３〜２０度であるのが好ましく、５〜１０度であるのがより好ましい。上記傾斜角度θが上記範囲内であることで、リフレクタ付きＬＥＤ用リードフレーム１を作製するために用いられる金型の製造コストを低減することができ、結果としてリフレクタ付きＬＥＤ用リードフレーム１の製造コストを低減することができ、ひいては半導体装置１０の製造コストをも低減することができる。また、上記傾斜角度θが上記範囲内であることで、リフレクタ付きＬＥＤ用リードフレーム１を用いて半導体装置１０を製造する工程におけるダイシングラインＤＬに沿ってダイシングする際のダイシングブレードの磨耗を抑制することができる。一方、上記傾斜角度θが２０度を超えると、樹脂リフレクタ非形成部４に隣接する部分の樹脂リフレクタ３の幅が低減することで樹脂リフレクタ３の強度が低下してしまい、リフレクタ付きＬＥＤ用リードフレーム１を用いて半導体装置１０を製造する工程におけるダイシングラインＤＬに沿ってダイシングする際に樹脂リフレクタ３にクラック等が生じ、樹脂リフレクタ３が破損してしまうおそれがある。その結果として、製造歩留まりが低下してしまうおそれがある。   In the above embodiment, the outer wall surface 31a of the resin reflector small region 31 is erected substantially perpendicular to the surface of the base material 2, but is not limited to this. For example, as shown in FIG. The outer wall surface 31a of the resin reflector small region 31 may be inclined so that the width W3 in the short direction of the resin reflector non-forming portion 4 widens upward. In this case, the angle (inclination angle) θ formed by the outer wall surface 31a with respect to the vertical direction of the surface of the substrate 2 is preferably 3 to 20 degrees, and more preferably 5 to 10 degrees. When the tilt angle θ is within the above range, the manufacturing cost of the mold used for manufacturing the LED lead frame 1 with a reflector can be reduced. As a result, the LED lead frame 1 with a reflector can be manufactured. The cost can be reduced, and consequently the manufacturing cost of the semiconductor device 10 can also be reduced. Further, since the inclination angle θ is within the above range, the wear of the dicing blade when dicing along the dicing line DL in the process of manufacturing the semiconductor device 10 using the LED lead frame 1 with a reflector is suppressed. be able to. On the other hand, when the inclination angle θ exceeds 20 degrees, the width of the resin reflector 3 in the portion adjacent to the resin reflector non-forming portion 4 is reduced, so that the strength of the resin reflector 3 is reduced, and the LED lead with reflector is reduced. When dicing along the dicing line DL in the process of manufacturing the semiconductor device 10 using the frame 1, a crack or the like may occur in the resin reflector 3, and the resin reflector 3 may be damaged. As a result, the production yield may be reduced.

上記実施形態において、樹脂リフレクタ非形成部４が一部のダイシングラインＤＬ上に位置するようにして、基材２の樹脂リフレクタ形成領域ＲＡ上に樹脂リフレクタ３（樹脂リフレクタ小領域３１）が設けられているが、これに限定されるものではなく、例えば、すべてのダイシングラインＤＬ上に樹脂リフレクタ非形成部４が位置するように、樹脂リフレクタ（樹脂リフレクタ小領域３１）が設けられていてもよい。すなわち、各樹脂リフレクタ小領域３１は、１つの搭載領域ＭＡを有するようにして構成されていてもよい。これにより、半導体装置の製造過程におけるダイシング工程において、ダイシングによる樹脂の削りカスの発生量を大幅に低減することができる。   In the above embodiment, the resin reflector 3 (resin reflector small region 31) is provided on the resin reflector formation region RA of the substrate 2 so that the resin reflector non-formation portion 4 is positioned on a part of the dicing lines DL. However, the present invention is not limited to this. For example, the resin reflector (resin reflector small region 31) may be provided so that the resin reflector non-forming portion 4 is positioned on all the dicing lines DL. . That is, each resin reflector small region 31 may be configured to have one mounting region MA. Thereby, in the dicing process in the manufacturing process of the semiconductor device, it is possible to greatly reduce the amount of resin scraps generated by dicing.

上記実施形態において、ダイシングラインＤＬは、個片化される１つの半導体装置１０に一のＬＥＤ素子８（搭載領域ＭＡ）が含まれるように設定されているが、これに限定されるものではなく、１個の半導体装置１０に複数個（例えば、４個）のＬＥＤ素子８（搭載領域ＭＡ）が含まれるように設定されていてもよい。   In the above-described embodiment, the dicing line DL is set so that one LED element 8 (mounting area MA) is included in one semiconductor device 10 to be singulated, but is not limited thereto. One semiconductor device 10 may be set to include a plurality of (for example, four) LED elements 8 (mounting area MA).

上記実施形態において、リフレクタ付きＬＥＤ用リードフレーム１における搭載領域ＭＡは、基材２の縦方向（又は横方向）に並列する搭載領域ＭＡを縦断（又は横断）する貫通スリット５により、大面積の第１リード部７１及び小面積の第２リード部７２に分割されているが、これに限定されるものではなく、例えば、基材２の縦方向（又は横方向）に並列する搭載領域ＭＡの略中央を縦断（又は横断）する貫通スリット５により、略同一面積の第１リード部７１及び第２リード部７２に分割されていてもよい。この場合において、当該リフレクタ付きＬＥＤ用リードフレーム１を用いて得られる半導体装置１０は、図８に示すように、第１リード部７１及び第２リード部７２を跨ぐようにして、ＬＥＤ素子８の一方の端子部８ａが第１リード部７１に接続され、他方の端子部８ｂが第２リード部７２に接続された構成とすることができる。また、図９に示すように、搭載領域ＭＡは、基材２の縦方向（又は横方向）に並列する搭載領域ＭＡを縦断（又は横断）する、２つの平行する貫通スリット５，５により、第１〜第３リード部７１〜７３に分割されていてもよい。この場合において、当該リフレクタ付きＬＥＤ用リードフレーム１を用いて得られる半導体装置１０は、搭載領域ＭＡの中央（２つの貫通スリット５，５の間）に位置する第３リード部７３にＬＥＤ素子８が実装され、ＬＥＤ素子８の一方の端子部８ａが第１リード部７１に接続され、他方の端子部８ｂが第２リード部７２に接続された構成とすることができる。   In the above embodiment, the mounting area MA in the LED lead frame 1 with a reflector has a large area due to the through slit 5 that vertically cuts (or crosses) the mounting area MA parallel to the vertical direction (or horizontal direction) of the substrate 2. Although it is divided into the first lead portion 71 and the second lead portion 72 having a small area, the present invention is not limited to this. For example, the mounting region MA of the base material 2 arranged in parallel in the vertical direction (or horizontal direction). The first lead portion 71 and the second lead portion 72 having substantially the same area may be divided by a through slit 5 that vertically cuts (or crosses) the substantially center. In this case, the semiconductor device 10 obtained by using the LED lead frame 1 with a reflector has the LED element 8 extending across the first lead portion 71 and the second lead portion 72 as shown in FIG. One terminal portion 8 a may be connected to the first lead portion 71, and the other terminal portion 8 b may be connected to the second lead portion 72. Further, as shown in FIG. 9, the mounting area MA is constituted by two parallel through slits 5 and 5 that longitudinally (or cross) the mounting area MA parallel to the vertical direction (or horizontal direction) of the substrate 2. It may be divided into first to third lead portions 71 to 73. In this case, the semiconductor device 10 obtained using the LED lead frame 1 with a reflector has the LED element 8 on the third lead portion 73 located in the center of the mounting area MA (between the two through slits 5 and 5). Is mounted, one terminal portion 8 a of the LED element 8 is connected to the first lead portion 71, and the other terminal portion 8 b is connected to the second lead portion 72.

上記実施形態において、リフレクタ付きＬＥＤ用リードフレーム１の樹脂リフレクタ形成領域ＲＡにおける基材２の表面及びその裏面は平坦形状に構成されているが、これに限定されるものではなく、例えば、図１０に示すように、当該表面及び裏面に溝２１，２２が形成されていてもよい。当該表面に溝２１が形成されていることで、樹脂リフレクタ３を基材２上に強固に接着させることができ、当該裏面に溝２２が形成されていることで、ダイシングされる基材２の厚み（金属量）をさらに低減することができ、ダイシングブレードにかかる負荷をさらに低減することができる。   In the said embodiment, although the surface of the base material 2 and the back surface in the resin reflector formation area RA of LED lead frame 1 with a reflector are comprised by flat shape, it is not limited to this, For example, FIG. As shown in FIG. 2, grooves 21 and 22 may be formed on the front and back surfaces. Since the groove 21 is formed on the front surface, the resin reflector 3 can be firmly adhered onto the base material 2, and the groove 22 is formed on the back surface, so that the substrate 2 to be diced can be diced. The thickness (metal amount) can be further reduced, and the load on the dicing blade can be further reduced.

以下、実施例等を挙げて本発明をさらに詳細に説明するが、本発明は下記の実施例等に何ら限定されるものではない。   EXAMPLES Hereinafter, although an Example etc. are given and this invention is demonstrated further in detail, this invention is not limited to the following Example etc. at all.

〔実施例１〕
基材２として厚み０．２ｍｍ、横５５ｍｍ×縦５０ｍｍの大きさの銅板を準備し、図２に示す形状の貫通スリット５及び貫通孔６をエッチングにより形成した。なお、縦方向に隣接する搭載領域ＭＡのピッチを３ｍｍとし、横方向に隣接する搭載領域ＭＡのピッチを３．７ｍｍとし、基材２上に１３行×１３列のマトリックス状に配列された搭載領域ＭＡを設けるように、貫通スリット５及び貫通孔６を形成した。 [Example 1]
A copper plate having a thickness of 0.2 mm and a width of 55 mm × length of 50 mm was prepared as the substrate 2, and the through slit 5 and the through hole 6 having the shape shown in FIG. 2 were formed by etching. In addition, the pitch of the mounting areas MA adjacent in the vertical direction is 3 mm, the pitch of the mounting areas MA adjacent in the horizontal direction is 3.7 mm, and the mounting is arranged in a matrix of 13 rows × 13 columns on the substrate 2. The through slit 5 and the through hole 6 were formed so as to provide the region MA.

このようにして得られた基材２を１５０℃に加熱した所定の上金型及び下金型でクランプし、樹脂リフレクタ３を構成するエポキシ樹脂を含む樹脂材料（日立化成社製，製品名：ＣＥＬ−Ｗ−７００５，硬化収縮率：０．４％（ＭＤ／ＴＤ））をキャビティ内に流し込み、その後金型を冷却して樹脂材料を硬化させた。なお、上金型として、４つの搭載領域ＭＡを含む２５個の樹脂リフレクタ小領域３１、６つの搭載領域ＭＡを含む１０個の樹脂リフレクタ小領域３１及び９つの搭載領域ＭＡを含む１個の樹脂リフレクタ小領域３１をマトリックス状に配列させ得る樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した（縦方向に７本及び横方向に７本の樹脂リフレクタ非形成部４）。なお、樹脂リフレクタ非形成部４の短手方向の幅Ｗ３が０．５ｍｍとなるように設定した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：１７％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（リフレクタ付きＬＥＤ用リードフレーム１の中心を基準としたときの、当該リフレクタ付きＬＥＤ用リードフレーム１のＺ軸方向（基材２に対する垂直方向）における最大変位量，ｍｍ）を、三次元測定機（ミツトヨ社製，製品名：Crysta-Plus M776）を用いて測定した。結果を表１に示す。   The base material 2 thus obtained is clamped with a predetermined upper die and lower die heated to 150 ° C., and a resin material containing an epoxy resin constituting the resin reflector 3 (product name: manufactured by Hitachi Chemical Co., Ltd .: CEL-W-7005, cure shrinkage: 0.4% (MD / TD)) was poured into the cavity, and then the mold was cooled to cure the resin material. As the upper mold, 25 resin reflector small regions 31 including four mounting regions MA, 10 resin reflector small regions 31 including six mounting regions MA, and one resin including nine mounting regions MA. An upper mold having a structure corresponding to the resin reflector non-forming part 4 is used so that the resin reflector non-forming part 4 in which the reflector small regions 31 can be arranged in a matrix is used (seven in the vertical direction and 7 resin reflector non-forming portions 4) in the lateral direction. The width W3 in the short direction of the resin reflector non-forming portion 4 was set to be 0.5 mm (the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector forming region RA) Area ratio: 17%). Then, the amount of warpage of the obtained LED lead frame 1 with a reflector (when the center of the LED lead frame 1 with a reflector is used as a reference, the Z-axis direction of the LED lead frame 1 with a reflector (perpendicular to the substrate 2) Direction) was measured using a three-dimensional measuring machine (product name: Crysta-Plus M776, manufactured by Mitutoyo Corporation). The results are shown in Table 1.

〔実施例２〕
１つの搭載領域ＭＡを含む樹脂リフレクタ小領域３１をマトリックス状に配列させ得る、縦方向及び横方向のそれぞれに連続する１４本の樹脂リフレクタ非形成部４（格子状の樹脂リフレクタ非形成部４）が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：３５％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Example 2]
Fourteen resin reflector non-forming parts 4 (lattice-like resin reflector non-forming parts 4) that can be arranged in a matrix in which the resin reflector small areas 31 including one mounting area MA are arranged in the vertical and horizontal directions. The LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 except that an upper mold having a structural portion corresponding to the resin reflector non-forming portion 4 was used (resin reflector formation). Area ratio of the total area of the base material 2 exposed by the resin reflector non-forming part 4 with respect to the area of the region RA: 35%). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例３〕
１３個の搭載領域ＭＡを含む樹脂リフレクタ小領域３１を横方向に配列させ得る、樹脂リフレクタ形成領域ＲＡの縦方向に連続する１４本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：１５％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 3
The resin reflector is formed such that 14 resin reflector non-forming portions 4 that are continuous in the vertical direction of the resin reflector forming area RA, in which the resin reflector small areas 31 including the 13 mounting areas MA can be arranged in the horizontal direction. The LED lead frame 1 with reflector was manufactured in the same manner as in Example 1 except that an upper mold having a structure corresponding to the non-formed part 4 was used (resin reflector non-formed relative to the area of the resin reflector forming region RA) Area ratio of the total area of the base material 2 exposed by the portion 4: 15%). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例４〕
１３個の搭載領域ＭＡを含む樹脂リフレクタ小領域３１を縦方向に配列させ得る、樹脂リフレクタ形成領域ＲＡの横方向に連続する１４本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：１９％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 4
The resin reflector is formed so that 14 resin reflector non-forming portions 4 that are continuous in the horizontal direction of the resin reflector forming area RA, in which the resin reflector small areas 31 including the 13 mounting areas MA can be arranged in the vertical direction. The LED lead frame 1 with reflector was manufactured in the same manner as in Example 1 except that an upper mold having a structure corresponding to the non-formed part 4 was used (resin reflector non-formed relative to the area of the resin reflector forming region RA) The area ratio of the total area of the base material 2 exposed by the part 4: 19%). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例５〕
樹脂リフレクタ形成領域ＲＡの縦方向及び横方向のそれぞれに連続する２本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：５％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 5
An upper mold having a structure corresponding to the resin reflector non-forming part 4 is used so that two resin reflector non-forming parts 4 continuous in the vertical and horizontal directions of the resin reflector forming region RA are provided. Except that, the LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (the area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector forming region RA: 5) %). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例６〕
樹脂リフレクタ形成領域ＲＡの縦方向及び横方向のそれぞれに連続する４本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：１０％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 6
An upper mold having a structure corresponding to the resin reflector non-forming portion 4 is used so that four resin reflector non-forming portions 4 continuous in the vertical and horizontal directions of the resin reflector forming region RA are provided. Except that, the LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (area ratio of the total area of the base material 2 exposed by the resin reflector non-formation part 4 with respect to the area of the resin reflector formation region RA: 10 %). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例７〕
樹脂リフレクタ形成領域ＲＡの縦方向及び横方向のそれぞれに連続する６本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：１５％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 7
An upper mold having a structure corresponding to the resin reflector non-forming part 4 is used so that six resin reflector non-forming parts 4 continuous in the vertical and horizontal directions of the resin reflector forming area RA are provided. Except that, the LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (the area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector forming region RA: 15 %). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例８〕
樹脂リフレクタ形成領域ＲＡの縦方向及び横方向のそれぞれに連続する８本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：２０％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 8
An upper mold having a structure corresponding to the resin reflector non-forming part 4 is used so that eight resin reflector non-forming parts 4 continuous in the vertical and horizontal directions of the resin reflector forming area RA are provided. Except that, the LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (the area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector forming area RA: 20 %). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例９〕
樹脂リフレクタ形成領域ＲＡの縦方向及び横方向のそれぞれに連続する１０本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：２５％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 9
An upper mold having a structure corresponding to the resin reflector non-forming part 4 is used so that ten resin reflector non-forming parts 4 continuous in the vertical and horizontal directions of the resin reflector forming area RA are provided. Except that, the LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (area ratio of the total area of the base material 2 exposed by the resin reflector non-formation portion 4 to the area of the resin reflector formation region RA: 25 %). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔実施例１０〕
樹脂リフレクタ形成領域ＲＡの縦方向に連続する２本の樹脂リフレクタ非形成部４が設けられるように、当該樹脂リフレクタ非形成部４に対応する構造部を有する上金型を使用した以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造した（樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率：２％）。そして、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 Example 10
Except for using an upper mold having a structure corresponding to the resin reflector non-forming part 4 so that two resin reflector non-forming parts 4 continuous in the vertical direction of the resin reflector forming region RA are provided. The LED lead frame 1 with a reflector was manufactured in the same manner as in Example 1 (area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector formation region RA: 2%). And the amount of curvature (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔比較例１〕
樹脂リフレクタ非形成部４に対応する構造部を有しない上金型を使用し、樹脂リフレクタ非形成部４が設けられないようにした以外は、実施例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 1]
LED lead frame with a reflector in the same manner as in Example 1 except that an upper mold having no structure corresponding to the resin reflector non-forming portion 4 is used and the resin reflector non-forming portion 4 is not provided. 1 was manufactured, and the amount of warpage (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔比較例２〕
樹脂リフレクタ３を構成する樹脂材料として、液晶高分子樹脂を含む樹脂材料（住友化学社製，製品名：ＳＣＧ−２２３，硬化収縮率：０．３２％（ＭＤ），０．６８％（ＴＤ））を用いた以外は比較例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 2]
As a resin material constituting the resin reflector 3, a resin material containing a liquid crystal polymer resin (manufactured by Sumitomo Chemical Co., Ltd., product name: SCG-223, cure shrinkage: 0.32% (MD), 0.68% (TD) ) Was used in the same manner as in Comparative Example 1 except that the LED lead frame 1 with reflector was manufactured, and the amount of warpage (mm) of the obtained LED lead frame 1 with reflector was measured. The results are shown in Table 1.

〔比較例３〕
樹脂リフレクタ３を構成する樹脂材料として、ポリフタルアミド樹脂を含む樹脂材料（ソルベイ社製，製品名：Ａ４４２２ ＬＳ ＷＨ１１８，硬化収縮率：０．５％（ＭＤ），０．６％（ＴＤ））を用いた以外は比較例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 3]
As a resin material constituting the resin reflector 3, a resin material containing polyphthalamide resin (manufactured by Solvay, product name: A4422 LS WH118, cure shrinkage: 0.5% (MD), 0.6% (TD)) The LED lead frame 1 with a reflector was manufactured in the same manner as in Comparative Example 1 except that was used, and the amount of warpage (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔比較例４〕
樹脂リフレクタ３を構成する樹脂材料として、ポリフタルアミド樹脂を含む樹脂材料（クラレ社製，製品名：ジェネスタＴＡ１１２，硬化収縮率：０．４６％（ＭＤ），０．８６％（ＴＤ））を用いた以外は比較例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 4]
As a resin material constituting the resin reflector 3, a resin material containing polyphthalamide resin (manufactured by Kuraray Co., Ltd., product name: GENESTA TA112, cure shrinkage: 0.46% (MD), 0.86% (TD)) is used. The LED lead frame 1 with a reflector was manufactured in the same manner as in Comparative Example 1 except that it was used, and the amount of warpage (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔比較例５〕
樹脂リフレクタ３を構成する樹脂材料として、シリコーン樹脂を含む樹脂材料（東レ・ダウコーニング社製，製品名：ＯＥ−６６６５，硬化収縮率：０．６％）を用いた以外は比較例１と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 5]
The same as Comparative Example 1 except that a resin material containing a silicone resin (product name: OE-6665, cure shrinkage: 0.6%) containing a silicone resin was used as the resin material constituting the resin reflector 3 Thus, the LED lead frame 1 with a reflector was manufactured, and the amount of warpage (mm) of the obtained LED lead frame 1 with a reflector was measured. The results are shown in Table 1.

〔比較例６〕
上金型を１３５℃に加熱し、下金型を１５０℃に加熱した以外は、比較例２と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 6]
The LED lead frame 1 with reflector was manufactured in the same manner as in Comparative Example 2 except that the upper mold was heated to 135 ° C. and the lower mold was heated to 150 ° C., and the LED lead frame 1 with reflector obtained was obtained. The amount of warpage (mm) was measured. The results are shown in Table 1.

〔比較例７〕
上金型及び下金型を８０℃に加熱した以外は、比較例２と同様にしてリフレクタ付きＬＥＤ用リードフレーム１を製造し、得られたリフレクタ付きＬＥＤ用リードフレーム１の反り量（ｍｍ）を測定した。結果を表１にあわせて示す。 [Comparative Example 7]
Except that the upper mold and the lower mold were heated to 80 ° C., the LED lead frame 1 with a reflector was manufactured in the same manner as in Comparative Example 2, and the warp amount (mm) of the obtained LED lead frame 1 with a reflector was obtained. Was measured. The results are shown in Table 1.

Figure 2012244086
Figure 2012244086

表１に示すように、樹脂リフレクタ形成領域ＲＡ内のダイシングラインＤＬ上に樹脂リフレクタ非形成部４を有する実施例１〜１０のリフレクタ付きＬＥＤ用リードフレーム１は、反り量が極めて小さかった。特に、実施例１〜４及び実施例６〜９から明らかなように、樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率を１５％以上としても、反り量にほとんど変化が見られなかった。   As shown in Table 1, the LED lead frames 1 with reflectors of Examples 1 to 10 having the resin reflector non-forming portion 4 on the dicing line DL in the resin reflector formation region RA had a very small amount of warpage. In particular, as is apparent from Examples 1 to 4 and Examples 6 to 9, the area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector formation region RA is set to 15% or more. However, there was almost no change in the amount of warpage.

一方、樹脂リフレクタ形成領域内に樹脂リフレクタ非形成部を有しない比較例１〜７のリフレクタ付きＬＥＤ用リードフレームは、反り量が大きく、硬化収縮率（ＭＤ）の低い樹脂材料を用いた比較例２のリフレクタ付きＬＥＤ用リードフレームにおいても、実施例１〜９のリフレクタ付きＬＥＤ用リードフレームよりも反り量が大きかった。また、比較例６及び７から明らかなように、金型の加熱温度を低温にしても、反り量に大きな変化は見られなかった。   On the other hand, the LED lead frames with reflectors of Comparative Examples 1 to 7 having no resin reflector non-forming portion in the resin reflector forming region are comparative examples using a resin material having a large warpage and a low cure shrinkage ratio (MD). Also in the LED lead frame with a reflector of 2, the amount of warp was larger than that of the LED lead frames with a reflector of Examples 1-9. Further, as is clear from Comparative Examples 6 and 7, even when the heating temperature of the mold was lowered, there was no significant change in the amount of warpage.

この結果から、樹脂リフレクタ形成領域内（ダイシングライン上）に樹脂リフレクタ非形成部を有することで、樹脂の硬化収縮に伴うリフレクタ付きＬＥＤ用リードフレームの反り返りによる変形を効果的に抑制し得ることが確認された。特に、実施例１及び２のように、格子状の樹脂リフレクタ非形成部を有することで、樹脂の硬化収縮に伴うリフレクタ付きＬＥＤ用リードフレームの反り返りによる変形を極めて効果的に抑制し得ることが確認された。特に、樹脂リフレクタ形成領域ＲＡの面積に対する樹脂リフレクタ非形成部４により露出する基材２の合計面積の面積率を１０〜３５％、さらには１５〜３５％とすることで、リフレクタ付きＬＥＤ用リードフレームの反り返りによる変形を効果的に抑制し、かつかかるリードフレームのダイシング時における樹脂リフレクタの破損等をも効果的に抑制し得るものと考えられる。   From this result, by having the resin reflector non-forming part in the resin reflector forming region (on the dicing line), it is possible to effectively suppress the deformation due to the warp of the LED lead frame with the reflector due to the curing shrinkage of the resin. confirmed. In particular, as in Examples 1 and 2, by having a lattice-shaped resin reflector non-formation part, it is possible to extremely effectively suppress deformation due to warping of the LED lead frame with reflector accompanying the curing shrinkage of the resin. confirmed. In particular, the area ratio of the total area of the base material 2 exposed by the resin reflector non-forming portion 4 with respect to the area of the resin reflector forming region RA is set to 10 to 35%, and further to 15 to 35%. It is considered that the deformation due to the warping of the frame can be effectively suppressed, and the breakage of the resin reflector during the dicing of the lead frame can also be effectively suppressed.

本発明は、ＬＥＤ素子を利用する種々の半導体装置の製造に有用である。   The present invention is useful for manufacturing various semiconductor devices using LED elements.

１…リフレクタ付きＬＥＤ用リードフレーム
２…基材
３…樹脂リフレクタ
３１…樹脂リフレクタ小領域
４…樹脂リフレクタ非形成部
８…ＬＥＤ素子
９…封止樹脂
１０…半導体装置 DESCRIPTION OF SYMBOLS 1 ... LED lead frame with a reflector 2 ... Base material 3 ... Resin reflector 31 ... Resin reflector small area | region 4 ... Resin reflector non-formation part 8 ... LED element 9 ... Sealing resin 10 ... Semiconductor device

Claims (7)

マトリックス状に配列されてなる、ＬＥＤ素子を搭載するための複数の搭載領域、及び前記複数の搭載領域のそれぞれの周囲を取り囲むように樹脂リフレクタが設けられる樹脂リフレクタ形成領域を有する基材と、
前記樹脂リフレクタ形成領域中のダイシングライン上に位置する線状の樹脂リフレクタ非形成部と、
前記樹脂リフレクタ形成領域中の前記樹脂リフレクタ非形成部を除く領域に設けられてなる樹脂リフレクタと
を備えることを特徴とするリフレクタ付きＬＥＤ用リードフレーム。 A substrate having a plurality of mounting regions for mounting the LED elements arranged in a matrix, and a resin reflector forming region in which a resin reflector is provided so as to surround each of the plurality of mounting regions;
A linear resin reflector non-forming part located on a dicing line in the resin reflector forming region;
A lead frame for an LED with a reflector, comprising: a resin reflector provided in a region excluding the resin reflector non-forming portion in the resin reflector formation region. 前記樹脂リフレクタは、前記樹脂リフレクタ非形成部により、相互に接触しない複数の樹脂リフレクタ小領域に分割されており、
前記樹脂リフレクタ小領域は、少なくとも１つの前記搭載領域を含むことを特徴とする請求項１に記載のリフレクタ付きＬＥＤ用リードフレーム。 The resin reflector is divided into a plurality of resin reflector small areas that are not in contact with each other by the resin reflector non-forming portion,
The LED lead frame with a reflector according to claim 1, wherein the resin reflector small region includes at least one of the mounting regions. 前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の最外周に位置する一の部位から当該最外周に位置する他の部位まで連続することを特徴とする請求項１又は２に記載のリフレクタ付きＬＥＤ用リードフレーム。   The said resin reflector non-formation part continues from one site | part located in the outermost periphery of the said resin reflector formation area to the other site | part located in the said outermost periphery, The with reflector of Claim 1 or 2 characterized by the above-mentioned. LED lead frame. 前記樹脂リフレクタ形成領域は、略方形状に構成されており、
前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の対向する二辺間を直線状に連続することを特徴とする請求項１〜３のいずれかに記載のリフレクタ付きＬＥＤ用リードフレーム。 The resin reflector forming region is configured in a substantially rectangular shape,
The LED lead frame with a reflector according to any one of claims 1 to 3, wherein the resin reflector non-formation portion is linearly continuous between two opposing sides of the resin reflector formation region. 前記樹脂リフレクタ非形成部は、前記樹脂リフレクタ形成領域の対向する二辺間を直線状に連続するとともに、前記樹脂リフレクタ形成領域の対向する他の二辺間を直線状に連続することを特徴とする請求項４に記載のリフレクタ付きＬＥＤ用リードフレーム。   The resin reflector non-forming portion is continuous in a straight line between two opposing sides of the resin reflector forming region and linearly continues between two opposing sides of the resin reflector forming region. The LED lead frame with a reflector according to claim 4. 前記樹脂リフレクタ非形成部の短手方向の幅が、０．１〜２ｍｍであることを特徴とする請求項１〜５のいずれかに記載のリフレクタ付きＬＥＤ用リードフレーム。   The LED lead frame with a reflector according to any one of claims 1 to 5, wherein a width of the resin reflector non-forming portion in a short direction is 0.1 to 2 mm. 請求項１〜６のいずれかに記載のリフレクタ付きＬＥＤ用リードフレームにおける前記搭載領域上にＬＥＤ素子を実装する工程と、
前記搭載領域上に実装された前記ＬＥＤ素子を封止樹脂により封止する工程と、
前記搭載領域上に実装された前記ＬＥＤ素子が前記封止樹脂により封止された前記ＬＥＤ用リードフレームを前記ダイシングラインに沿って切断する工程と
を含むことを特徴とする半導体装置の製造方法。 A step of mounting an LED element on the mounting region in the LED lead frame with reflector according to claim 1;
Sealing the LED element mounted on the mounting region with a sealing resin;
Cutting the LED lead frame in which the LED element mounted on the mounting region is sealed with the sealing resin along the dicing line.
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