JP2015126091A - Manufacturing method of lead frame with resin, manufacturing method of semiconductor device, injection molding die device, and lead frame with resin - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a lead frame with resin which can improve productivity of a lead frame with resin and prevent warpage from being generated in the lead frame with resin.SOLUTION: A lead frame 10 is placed on a lower die 42, and an upper die 43 for forming a molding space 43a of a reflection resin 23 with the lower die 42 is arranged on the lower die 42. By forming the reflection resin 23 on a surface 10a of the lead frame 10 by performing injection molding of a thermoplastic resin material in the molding space 43a of the upper die 43, the lead frame 10 having a plurality of die pads 25 and a plurality of lead parts 26, and a lead frame 30 with resin provided on the lead frame 10 and having the reflection resin 23 with a plurality of LED element storage parts 23a are obtained. When forming the reflection resin 23 on the surface 10a of the lead frame 10, the temperature of the lower die 42 is made higher than the temperature of the upper die 43.

Description

  The present invention relates to a method of manufacturing a lead frame with resin, a method of manufacturing a semiconductor device, an injection mold device, and a lead frame with resin.

  In recent years, lighting devices using LED (light emitting diode) elements as light sources have been used for various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of such lighting devices include a semiconductor device manufactured by mounting LED elements on a lead frame.

  Some semiconductor devices (LED packages) for LED elements are provided with a reflective resin for reflecting light from the LED elements (see, for example, Patent Document 1).

JP 2006-156704 A

  Conventionally, when producing an LED package, a reflective resin is formed on a lead frame by transfer molding a thermosetting resin, and thereafter, individual LED packages are produced from the lead frame with resin. . However, when the thermosetting resin is transfer molded, there is a problem that it is difficult to improve the productivity of the lead frame with resin because the molding time becomes long. Conventionally, when a lead frame with resin is produced, there is also a problem that the lead frame with resin is warped because the thermal expansion coefficient of the lead frame is different from the thermal expansion coefficient of the reflective resin.

  The present invention has been made in consideration of the above points, and can improve the productivity of the lead frame with resin and can prevent the lead frame with resin from being warped. An object of the present invention is to provide a manufacturing method, a manufacturing method of a semiconductor device, an injection mold device, and a lead frame with resin.

  The present invention includes a lead frame having a plurality of die pads and a plurality of lead portions provided separately from each die pad, and a reflective resin provided on the lead frame and having a plurality of LED element storage portions. In the method of manufacturing a lead frame with resin, a step of placing a lead frame on the lower die, a step of placing an upper die on the lower die that forms a molding space for reflecting resin with the lower die, Forming a reflective resin on the surface of the lead frame by injection molding a thermoplastic resin material into the molding space of the mold, and increasing the temperature of the lower mold in the step of forming the reflective resin on the surface of the lead frame. A method for manufacturing a resin-attached lead frame, wherein the temperature is higher than a mold temperature.

  The reflective resin of the present invention includes a plurality of reflective resin blocks separated from each other, at least one LED element storage portion is formed in each reflective resin block, and a lead frame is exposed between the adjacent reflective resin blocks This is a method of manufacturing a lead frame with resin, characterized in that an exposed region is formed.

  The present invention is a method for manufacturing a lead frame with resin, wherein the thermoplastic resin material is injected in parallel to the longitudinal direction of the exposed region in the step of forming the reflective resin.

  The thermoplastic resin material of the present invention is a method for producing a resin-attached lead frame, comprising a liquid crystal polymer.

  The present invention is a method of manufacturing a lead frame with a resin, wherein a recess for accommodating a lead frame is formed on a lower mold.

  In the present invention, when the lead frame is accommodated in the recess of the lower mold, the surface of the lower mold and the surface of the lead frame are positioned on the same plane, or the surface of the lead frame is more than 0 mm from the surface of the lower mold. It is a manufacturing method of the lead frame with resin characterized by being high in the range of 1 mm or less.

  The present invention relates to a method of manufacturing a semiconductor device, and a method of manufacturing a resin-made lead frame by a method of manufacturing a lead frame with resin, and mounting an LED element on each die pad in each LED element housing portion of a reflective resin. A step of connecting the LED element and each lead portion with a conductive portion, a step of filling a sealing resin in each LED element housing portion of the reflective resin, and cutting the reflective resin and the lead frame to thereby reflect the resin And a step of separating the lead frame for each LED element.

  The present invention includes a lead frame having a plurality of die pads and a plurality of lead portions provided separately from each die pad, and a reflective resin provided on the lead frame and having a plurality of LED element storage portions. In an injection mold apparatus for producing a lead frame with resin, a lower mold on which a lead frame is placed, and an upper mold that is disposed on the lower mold and forms a molding space for reflective resin between the lower mold And a control unit that is connected to the lower mold and the upper mold and controls the temperature of the lower mold and the upper mold, and the surface of the lead frame is formed by injection molding of the thermoplastic resin material in the molding space of the upper mold. The control resin is an injection mold apparatus characterized in that when the reflective resin is formed on the surface of the lead frame, the temperature of the lower mold is set higher than the temperature of the upper mold.

  The present invention is an injection mold apparatus characterized in that a recess for accommodating a lead frame is formed on a lower mold.

  In the present invention, when the lead frame is accommodated in the recess of the lower mold, the surface of the lower mold and the surface of the lead frame are positioned on the same plane, or the surface of the lead frame is more than 0 mm from the surface of the lower mold. An injection mold apparatus characterized by being high in a range of 1 mm or less.

  In the lead frame with resin, the present invention has a lead frame having a plurality of die pads and a plurality of lead portions provided separately from each die pad, and a plurality of LED element storage portions provided on the lead frame. And a reflection resin made of a thermoplastic resin material, the reflection resin includes a plurality of reflection resin blocks separated from each other, and at least one LED element storage portion is formed in each reflection resin block, and the reflection resins adjacent to each other A lead frame with a resin, characterized in that a strip-shaped exposed region where the lead frame is exposed is formed between the blocks.

  The present invention is the lead frame with resin, wherein the thermoplastic resin material is made of a liquid crystal polymer.

  According to the present invention, in the step of forming the reflective resin on the surface of the lead frame, the temperature of the lower mold is made higher than the temperature of the upper mold. It is possible to prevent or reduce the problem that the lead frame with resin is warped due to the difference in thermal expansion coefficient between the frame and the reflective resin.

The whole top view which shows a lead frame. The partial enlarged plan view which shows a lead frame. Sectional drawing which shows a lead frame (III-III sectional view taken on the line of FIG. 2). The whole top view which shows the lead frame with resin by one embodiment of this invention. Sectional drawing (VV sectional view taken on the line of FIG. 4) which shows the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the lead frame with resin by one embodiment of this invention (VI-VI sectional view taken on the line of FIG. 4). The partial enlarged top view which shows the lead frame with resin by one embodiment of this invention. FIG. 8 is a large cross-sectional view (cross-sectional view taken along the line VIII-VIII in FIG. 7) showing a resin-attached lead frame according to an embodiment of the present invention. Sectional drawing which shows the semiconductor device produced using the lead frame with resin by one embodiment of this invention (the IX-IX sectional view taken on the line of FIG. 10). The top view which shows the semiconductor device produced using the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the manufacturing method of a lead frame. Sectional drawing which shows the manufacturing method of the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the manufacturing method of the lead frame with resin by one embodiment of this invention. Sectional drawing which shows the manufacturing method of the semiconductor device by one embodiment of this invention.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

Construction of the lead frame initially, to FIG. 1 to FIG. 3, the outline of the lead frame used in a resin with a lead frame according to the present embodiment. 1 is an overall plan view showing the lead frame, FIG. 2 is a partially enlarged plan view showing the lead frame, and FIG. 3 is a cross-sectional view showing the lead frame.

  The lead frame 10 shown in FIG. 1 is used when manufacturing the semiconductor device 20 (FIGS. 9 and 10) on which the LED elements 21 are mounted. Such a lead frame 10 includes a frame body 13 having a rectangular outer shape, and a large number of package regions 14 arranged in a multi-row and multi-stage (matrix shape) within the frame body 13. A plurality of strip-shaped exposed regions 29 that are portions where the package region 14 does not exist are formed in the frame 13. The exposed area 29 will be described later.

  As shown in FIG. 2, each of the plurality of package regions 14 includes a die pad 25 on which the LED elements 21 are mounted, and lead portions 26 that are provided apart from the die pad 25.

  A gap 16 is formed between the die pad 25 and the lead portion 26 in one package region 14, and after dicing (FIG. 14D), the die pad 25 and the lead portion 26 are electrically connected to each other. It is designed to be insulated. Each package region 14 is a region corresponding to each semiconductor device 20. In FIG. 2, each package region 14 is indicated by a rectangular two-dot chain line.

  In this specification, as shown in FIG. 1, the longitudinal direction of the lead frame 10 corresponds to the X direction, and the direction perpendicular to the longitudinal direction of the lead frame 10 corresponds to the Y direction. That is, as shown in FIG. 2, the horizontal direction corresponds to the X direction and the vertical direction corresponds to the Y direction when the lead portions 26 and the die pads 25 in each package region 14 are arranged side by side.

  Further, as shown in FIG. 2, the lead portions 26 in each package region 14 are lead portions in other package regions 14 adjacent to the upper side (Y direction plus side) and the lower side (Y direction minus side) of FIG. 26 and the lead connecting part 52, respectively. Further, the die pad 25 in each package region 14 is connected to the die pad 25 in another package region 14 adjacent to the upper side (Y direction plus side) and the lower side (Y direction minus side) of FIG. It is connected.

  Further, the die pad 25 in each package region 14 is connected to the lead portion 26 in another package region 14 adjacent to the right side (X direction plus side) in FIG. Furthermore, the lead portion 26 in each package region 14 is connected to the die pad 25 in another package region 14 adjacent to the left side (X direction minus side) in FIG.

  The lead connecting portion 52, the die pad connecting portion 53, and the package region connecting portion 54 are formed thinner than other portions of the lead frame 10 by being half-etched from the back side. The lead part 26 and the die pad 25 in the package area 14 located on the outermost periphery are connected to the frame body 13 by one or more of the lead connection part 52, the die pad connection part 53, and the package area connection part 54. Has been.

  On the other hand, as shown in the sectional view of FIG. 3, the lead frame 10 includes a lead frame main body 11 and a plating layer 12 formed on the lead frame main body 11.

  Of these, the lead frame body 11 is made of a metal plate. Examples of the material of the metal plate constituting the lead frame body 11 include copper, copper alloy, 42 alloy (Ni 42% Fe alloy), and the like. The thickness of the lead frame main body 11 is preferably 0.05 mm to 0.5 mm, although it depends on the configuration of the semiconductor device.

  The plating layer 12 is provided on the entire surface including the front surface and the back surface of the lead frame main body 11. The plating layer 12 on the front side functions as a reflection layer for reflecting light from the LED element 21. On the other hand, the plating layer 12 on the back side plays a role of increasing the adhesion with the solder. The plating layer 12 is made of, for example, an electrolytic plating layer of silver (Ag). The plating layer 12 is formed to have an extremely thin thickness, and is specifically preferably 0.005 μm to 0.2 μm. The plating layer 12 is not necessarily provided on the entire front and back surfaces of the lead frame body 11, and may be provided on only a part of the front and back surfaces of the lead frame body 11.

  A first outer lead portion 27 is formed on the back surface of the die pad 25, and a second outer lead portion 28 is formed on the bottom surface of the lead portion 26. The first outer lead portion 27 and the second outer lead portion 28 are used when connecting the semiconductor device 20 and an external wiring board (not shown), respectively.

Structure of Lead Frame with Resin Next, an embodiment of the lead frame with resin shown in FIGS. 1 to 3 will be described with reference to FIGS. FIG. 4 is an overall plan view showing the lead frame with resin according to the present embodiment, FIGS. 5 and 6 are sectional views showing the lead frame with resin according to the present embodiment, and FIG. FIG. 8 is a cross-sectional view illustrating a lead frame with resin according to the present embodiment.

  The lead frame 30 with resin shown in FIGS. 4 to 8 is used for mounting the LED element 21 (see FIGS. 9 and 10). Such a lead frame 30 with resin includes a lead frame 10 and a reflective resin 23 provided on the lead frame 10.

  Among these, the lead frame 10 includes a plurality of die pads 25 and a plurality of lead portions 26 provided separately from each die pad 25. The configuration of the lead frame 10 is the same as that shown in FIGS. 1 to 3 described above, and detailed description thereof is omitted here.

  On the other hand, the reflective resin 23 is integrated with the lead frame 10 and has an LED element storage portion 23a surrounding an LED element 21 (described later). A side wall 23b is formed inside the LED element storage portion 23a. Furthermore, the gap 16 between the die pad 25 and the lead part 26 is also filled with the reflective resin 23.

  As shown in FIG. 4, the reflective resin 23 is composed of a plurality of reflective resin blocks 23c that are separated from each other and have the same shape. Each reflective resin block 23c extends in an elongated shape along the Y direction, and the above-described LED element storage portion 23a is formed therein. In this case, each reflective resin block 23c includes a plurality of LED element storage portions 23a arranged vertically and horizontally, but is not limited thereto, and each reflective resin block 23c includes at least one LED element storage portion 23a. Should be included.

  Each reflective resin block 23 c is completely separated from the adjacent reflective resin block 23 c on the surface 10 a side of the lead frame 10. Further, between the reflective resin blocks 23c adjacent to each other, a strip-shaped exposed region 29 where the lead frame 10 is exposed is formed. Each strip-shaped exposed region 29 has a longitudinal direction parallel to the Y direction, and extends from one long side of the rectangle constituting the outer shape of the lead frame 10 to the other long side without interruption. In the present embodiment, the plurality of exposed regions 29 have the same width and are arranged at equal intervals. However, the present invention is not necessarily limited to this.

  The reflective resin 23 is formed, for example, by injection molding a thermoplastic resin on the lead frame 10. As the thermoplastic resin used for the reflective resin 23, it is particularly preferable to select a thermoplastic resin having excellent heat resistance, weather resistance and mechanical strength. Examples of such thermoplastic resins include polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, polyetherimide, etc. It is preferable to do. When the liquid crystal polymer is used, the polymer is aligned along the emission direction of the reflection resin 23. For example, by making the emission direction of the reflection resin 23 parallel to the longitudinal direction (Y direction) of the exposed region 29, the reflection resin 23 can be prevented or reduced from warping in the longitudinal direction (Y direction) of the exposed region 29. Furthermore, by adding any one of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride, and boron nitride as a light reflecting agent in these resins, the bottom surface and the side wall 23b of the LED element storage portion 23a, The reflectance of light from the light emitting element can be increased, and the light extraction efficiency of the entire semiconductor device 20 can be increased.

Configuration of Semiconductor Device Next, an embodiment of a semiconductor device manufactured using the lead frame 30 with resin shown in FIGS. 4 to 8 will be described with reference to FIGS. 9 and 10 are a cross-sectional view and a plan view, respectively, showing a semiconductor device (SON type).

  As shown in FIGS. 9 and 10, the semiconductor device (LED package) 20 includes a lead frame 10 (individualized), an LED element 21 placed on a die pad 25 of the lead frame 10, and an LED element 21. And a bonding wire (conductive part) 22 that electrically connects the lead part 26 of the lead frame 10.

  Further, a reflective resin 23 (separated) is provided so as to surround the LED element 21, and the LED element 21 is stored in the LED element storage portion 23 a of the reflective resin 23. Furthermore, the LED element 21 and the bonding wire 22 are sealed with a translucent sealing resin 24. The sealing resin 24 is filled in the LED element storage portion 23 a of the reflective resin 23.

  Hereinafter, the respective constituent members constituting such a semiconductor device 20 will be sequentially described.

  The LED element 21 selects an emission wavelength ranging from ultraviolet light to infrared light by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, AlInGaP, or InGaN as a light emitting layer. Can do. As such an LED element 21, those conventionally used in general can be used.

  The LED element 21 is fixedly mounted on the die pad 25 in the LED element storage portion 23a of the reflective resin 23 by solder or die bonding paste. When using a die bonding paste, it is possible to select a die bonding paste made of an epoxy resin or a silicone resin having light resistance.

  The bonding wire 22 is made of a material having good conductivity such as gold, and one end thereof is connected to the terminal portion 21 a of the LED element 21, and the other end is connected to the lead portion 26.

  As described above, the reflective resin 23 is formed, for example, by injection molding a thermoplastic resin on the lead frame 10. The shape of the reflective resin 23 can be variously realized by designing a mold used for injection molding. For example, the overall shape of the reflective resin 23 may be a rectangular parallelepiped as shown in FIGS. 9 and 10, or may be a cylindrical shape or a cone shape. The bottom surface of the LED element storage portion 23a can be oval, racetrack, rectangular, circular, elliptical, polygonal, or the like. The cross-sectional shape of the side wall 23b of the LED element storage portion 23a may be constituted by a straight line as shown in FIG. 9, or may be constituted by a curve.

  As the sealing resin 24, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the semiconductor device 20 in order to improve the light extraction efficiency. Therefore, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength. In particular, when a high-brightness LED is used as the LED element 21, the sealing resin 24 is preferably made of a silicone resin having high weather resistance because the sealing resin 24 is exposed to strong light.

  Since the details of the lead frame 10 have already been described with reference to FIGS. 1 to 3, detailed description thereof is omitted here.

Manufacturing Method of Lead Frame Next, a manufacturing method of the lead frame 10 shown in FIGS. 1 to 3 will be described with reference to FIGS. 11A to 11F are cross-sectional views showing a method for manufacturing the lead frame 10 according to the present embodiment, and correspond to the cross section shown in FIG.

  First, as shown in FIG. 11A, a flat metal substrate 31 is prepared. As the metal substrate 31, a metal substrate made of copper, copper alloy, 42 alloy (Ni 42% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 31 performed the degreasing | defatting etc. to the both surfaces, and performed the washing process.

  Next, photosensitive resists 32a and 33a are applied to the entire front and back surfaces of the metal substrate 31, respectively, and dried (FIG. 11B). As the photosensitive resists 32a and 33a, conventionally known resists can be used.

  Subsequently, the metal substrate 31 is exposed through a photomask and developed to form etching resist layers 32 and 33 having desired openings 32b and 33b (FIG. 11C).

  Next, the etching resist layers 32 and 33 are used as an anticorrosion film, and the metal substrate 31 is etched with an etching solution (FIG. 11D). Corrosion liquid can be suitably selected according to the material of the metal substrate 31 to be used. For example, when copper is used as the metal substrate 31, a ferric chloride aqueous solution is usually used and spray etching can be performed from both surfaces of the metal substrate 31.

  Next, the etching resist layers 32 and 33 are peeled and removed to obtain the lead frame body 11 including the frame 13, the plurality of die pads 25, and the plurality of lead portions 26 (FIG. 11E). ).

  Next, by electroplating the front and back surfaces of the lead frame main body 11, a metal (for example, silver) is deposited on the lead frame main body 11, and the plating layer 12 is formed on the entire surface including the front and back surfaces of the lead frame main body 11. Is formed (FIG. 11F). The plating layer 12 may be formed only on a part of the lead frame body 11.

  In this way, the lead frame 10 shown in FIGS. 1 to 3 is obtained (FIG. 11F).

Manufacturing Method of Lead Frame with Resin Next, a manufacturing method of the lead frame with resin 30 shown in FIGS. 4 to 8 will be described with reference to FIGS. 12 (a)-(d) and FIGS. 13 (a)-(d). To do. 12 (a)-(d) and FIGS. 13 (a)-(d) are cross-sectional views showing a method of manufacturing the lead frame 30 with resin according to the present embodiment. 12A to 12D correspond to the cross section shown in FIG. 8 (cross section taken along line VIII-VIII in FIG. 7), and FIGS. 13A to 13D correspond to XII in FIG. It corresponds to the XII line cross section.

  First, the lead frame 10 is manufactured by the above-described steps (FIGS. 11A to 11F) (FIGS. 12A and 13A).

  Subsequently, the lead frame 10 is mounted in an injection mold apparatus 40 of an injection molding machine (not shown) (FIGS. 12B and 13B).

  The injection mold apparatus 40 includes a lower mold 42 on which the lead frame 10 is placed, an upper mold 43 disposed on the lower mold 42, and a control unit 44 connected to the lower mold 42 and the upper mold 43. It has. In the present embodiment, an injection mold apparatus 40 including the lower mold 42, the upper mold 43, and the control unit 44 is also provided.

  As shown in FIGS. 12B and 13B, after the lead frame 10 is placed on the lower mold 42 of the injection mold apparatus 40, the upper mold 43 is relative to the lower mold 42. When the upper die 43 is disposed on the lower die 42, the lead frame 10 is held between the upper die 43 and the lower die 42.

  By the way, as shown in FIG. 13B, a recess 42 a for accommodating the lead frame 10 is formed on the lower mold 42. By accommodating the lead frame 10 in the recess 42a, the lead frame 10 can be correctly positioned on the lower mold 42. Further, the recess 42 a of the lower mold 42 has a planar shape corresponding to the lead frame 10. Further, the depth of the recess 42 a of the lower mold 42 is substantially the same as the thickness of the lead frame 10. That is, when the lead frame 10 is accommodated in the recess 42a, the surface 42b (the surface other than the recess 42a) of the lower mold 42 and the surface 10a of the lead frame 10 are located on substantially the same plane, or the lead frame 10 The surface 10a is higher than the surface 42b of the lower mold 42 in the range of more than 0 mm and 0.1 mm or less. Thus, when the thermoplastic resin material is supplied from the gate runner portion 43b side of the upper mold 43, the thermoplastic resin material smoothly flows from the surface 42b of the lower mold 42 onto the surface 10a of the lead frame 10. .

  The upper mold 43 forms a molding space 43 a for the reflective resin 23 with the lower mold 42. The molding space 43a corresponds to the shape of the reflective resin 23 and communicates with a gate runner portion 43b for introducing a thermoplastic resin material.

The controller 44 can control the temperatures of the lower mold 42 and the upper mold 43. In this case, the temperature of the lower mold 42 is set higher than the temperature of the upper mold 43 in advance. That is, the temperature of the lower mold 42 and _{T M,} when the temperature _{T R} of the upper mold _43, and has a T M> _{T R.} The difference ΔT (= T _M −T _R ) between these temperatures T _M and T _R is that the thermal expansion coefficient of the material of the lead frame 10 (for example, copper) and the thermal expansion coefficient of the material of the reflective resin 23 (liquid crystal polymer). Can be determined in consideration of Specifically, ΔT can be set at, for example, 10 ° C. to 60 ° C.

  Next, the reflective resin 23 is formed on the surface 10 a of the lead frame 10 by injection molding a thermoplastic resin material made of, for example, a liquid crystal polymer in the molding space 43 a of the upper mold 43. At this time, a thermoplastic resin material is supplied from a resin supply portion (not shown) of the injection molding machine, and the thermoplastic resin material passes through the gate runner portion 43b and is poured into the molding space 43a. Thereafter, the thermoplastic resin material is cured between the lower mold 42 and the upper mold 43, whereby the reflective resin 23 is formed on the surface 10a of the lead frame 10 (FIGS. 12C and 13C). The reflective resin 23 is also filled in the gap 16 between the die pad 25 and the lead part 26 (FIG. 12C).

  Next, the lead frame 10 on which the reflective resin 23 is formed is taken out from the lower mold 42 and the upper mold 43. The reflective resin 23 and the lead frame 10 are heated by the control unit 44 in the lower mold 42 and the upper mold 43. After being taken out from the lower mold 42 and the upper mold 43, the reflective resin 23 and the lead frame 10 are gradually added. To be cooled. In the present embodiment, as described above, the temperature of the lower die 42 is set higher than the temperature of the upper die 43, so that the temperature of the lead frame 10 is higher than the temperature of the reflective resin 23 immediately after being taken out. . On the other hand, in general, the thermal expansion coefficient of the material of the reflective resin 23 is larger than the thermal expansion coefficient of the material of the lead frame 10. Therefore, when the lead frame 10 and the reflective resin 23 are cooled and the temperature becomes the same, one of them does not shrink excessively. Thereby, it is possible to prevent or reduce the occurrence of warping in the lead frame 10 and the reflective resin 23 due to the difference in thermal expansion coefficient.

  Thereafter, the gate runner resin 23d corresponding to the gate runner portion 43b is bent with respect to the lead frame 10 and the reflective resin 23 to remove the gate runner resin 23d (gate break). In this way, the lead frame 30 with resin in which the reflective resin 23 and the lead frame 10 are integrally formed is obtained (FIGS. 12D and 13D).

  By the way, in this embodiment, as described above, in the step of forming the reflective resin 23 (FIG. 13C), for example, the thermoplastic resin material made of a liquid crystal polymer is the length of the exposed region 29 (see FIG. 4). Injected parallel to the direction. That is, the thermoplastic resin material is injected from the Y direction plus side toward the Y direction minus side. In this case, since the liquid crystal polymer constituting the thermoplastic resin material is oriented along the injection direction, the strength of the reflective resin 23 is increased along the longitudinal direction (Y direction) of the exposed region 29, and the reflective resin 23 is exposed. Problems that warp in the longitudinal direction (Y direction) of the region 29 can be prevented or reduced.

  In the present embodiment, as described above, the reflection resin 23 is composed of a plurality of reflection resin blocks 23c that are separated from each other and have the same shape, and the reflection resin blocks 23c that are adjacent to each other. A strip-shaped exposed region 29 where the lead frame 10 is exposed is formed therebetween. As a result, the plurality of regions where the reflective resin 23 does not exist are present at intervals along the direction (X direction) perpendicular to the longitudinal direction of the exposed region 29, so that the reflective resin 23 warps in this direction (X direction). Can be prevented or reduced.

Manufacturing Method of Semiconductor Device Next, a manufacturing method of the semiconductor device 20 shown in FIGS. 9 and 10 will be described with reference to FIGS. 14A to 14E are cross-sectional views illustrating a method for manufacturing the semiconductor device 20 according to the present embodiment, and correspond to the cross-section illustrated in FIG.

  First, the lead frame 30 with resin is manufactured by the above-described steps (FIGS. 12A to 12D and FIGS. 13A to 13D), and each LED of the reflective resin 23 of the lead frame 30 with resin is manufactured. The LED element 21 is mounted on the die pad 25 of the lead frame 10 in the element storage portion 23a. In this case, the LED element 21 is placed and fixed on the die pad 25 using a solder or a die bonding paste (die attach step) (FIG. 14A).

  Next, the terminal portion 21a of the LED element 21 and the surface of the lead portion 26 are electrically connected to each other by the bonding wire 22 (wire bonding step) (FIG. 14B).

  Thereafter, the sealing resin 24 is filled in the LED element storage portion 23a of the reflective resin 23, and the LED element 21 and the bonding wire 22 are sealed with the sealing resin 24 (FIG. 14C).

  Next, the reflective resin 23 and the lead frame 10 are cut into portions between the package regions 14 to separate the reflective resin 23 and the lead frame 10 for each LED element 21 (dicing step) (FIG. 14 ( d)). At this time, the lead frame 10 is first placed and fixed on the dicing tape 37, and thereafter, the reflective resin 23 between the LED elements 21 and the lead connecting portion of the lead frame 10 by a blade 38 made of, for example, a diamond grindstone. 52, the die pad connecting portion 53 and the package region connecting portion 54 are cut.

  In this way, the semiconductor device 20 shown in FIGS. 9 and 10 can be obtained (FIG. 14E).

  As described above, according to the present embodiment, since the reflection resin 23 is formed by injection molding of the thermoplastic resin material on the surface 10a of the lead frame 10, it is compared with the case where the thermosetting resin material is transfer molded. Thus, the molding time can be shortened, and the productivity of the lead frame 30 with resin can be improved. Further, when the reflective resin 23 is formed, the temperature of the lower mold 42 is made higher than the temperature of the upper mold 43, so that the thermal expansion coefficient of the lead frame 10 and the thermal expansion coefficient of the reflective resin 23 are different. 10 and the reflection resin 23 can be prevented or reduced from warping.

  In addition, according to the present embodiment, the reflective resin 23 includes a plurality of reflective resin blocks 23c separated from each other, and a strip-shaped exposed region 29 where the lead frame 10 is exposed is between the adjacent reflective resin blocks 23c. Since it is formed, the problem that the reflective resin 23 warps in the direction (X direction) orthogonal to the longitudinal direction of the exposed region 29 can be prevented or reduced.

  Furthermore, according to the present embodiment, the thermoplastic resin material is made of a liquid crystal polymer, and the thermoplastic resin material is injected in parallel to the longitudinal direction (Y direction) of the exposed region 29, so that the reflective resin 23 is exposed region. The problem of warping in the longitudinal direction (Y direction) 29 can be prevented or reduced.

DESCRIPTION OF SYMBOLS 10 Lead frame 11 Lead frame main body 12 Plating layer 13 Frame body 20 Semiconductor device 21 LED element 22 Bonding wire (conductive part)
DESCRIPTION OF SYMBOLS 23 Reflective resin 23a LED element accommodating part 23c Reflective resin block 24 Sealing resin 25 Die pad 26 Lead part 27 1st outer lead part 28 2nd outer lead part 29 Exposed area 30 Lead frame with resin 40 Injection mold apparatus 42 Lower die 42a Recess 42b Surface 43 Upper die 43a Molding space 43b Gate runner part 44 Control part 52 Lead connecting part 53 Die pad connecting part 54 Package area connecting part

Claims (12)

A lead frame with a resin, comprising: a lead frame having a plurality of die pads and a plurality of lead portions spaced apart from each die pad; and a reflective resin provided on the lead frame and having a plurality of LED element storage portions In the manufacturing method of
Placing the lead frame on the lower mold;
Placing an upper mold on the lower mold to form a molding space for the reflective resin with the lower mold;
A step of injection-molding a thermoplastic resin material in the molding space of the upper mold and forming a reflective resin on the surface of the lead frame,
A method of manufacturing a resin-attached lead frame, wherein in the step of forming a reflective resin on the surface of the lead frame, the temperature of the lower die is set higher than the temperature of the upper die.   The reflective resin includes a plurality of reflective resin blocks separated from each other, and at least one LED element storage portion is formed in each reflective resin block, and a strip-shaped exposed region in which the lead frame is exposed between the adjacent reflective resin blocks. The method for manufacturing a lead frame with resin according to claim 1, wherein:   3. The method of manufacturing a lead frame with a resin according to claim 2, wherein in the step of forming the reflective resin, the thermoplastic resin material is injected in parallel with a longitudinal direction of the exposed region.   The method for manufacturing a lead frame with a resin according to any one of claims 1 to 3, wherein the thermoplastic resin material is made of a liquid crystal polymer.   The method for manufacturing a lead frame with a resin according to any one of claims 1 to 4, wherein a recess for accommodating the lead frame is formed on the lower mold.   When the lead frame is accommodated in the lower mold recess, the surface of the lower mold and the surface of the lead frame are located on the same plane, or the surface of the lead frame is more than 0 mm and 0.1 mm or less from the surface of the lower mold 6. The method of manufacturing a lead frame with a resin according to claim 5, wherein the height is high. In a method for manufacturing a semiconductor device,
A step of producing a lead frame with resin by the method for producing a lead frame with resin according to any one of claims 1 to 6,
A step of mounting the LED element on each die pad in each LED element storage portion of the reflective resin;
Connecting the LED element and each lead portion by a conductive portion;
A step of filling a sealing resin into each LED element housing portion of the reflective resin;
And a step of separating the reflection resin and the lead frame for each LED element by cutting the reflection resin and the lead frame. A lead frame with a resin, comprising: a lead frame having a plurality of die pads and a plurality of lead portions spaced apart from each die pad; and a reflective resin provided on the lead frame and having a plurality of LED element storage portions In the injection mold equipment for manufacturing
A lower mold on which the lead frame is placed;
An upper mold that is disposed on the lower mold and forms a molding space for the reflective resin with the lower mold;
A control unit connected to the lower mold and the upper mold and controlling the temperature of the lower mold and the upper mold;
The thermoplastic resin material is injection-molded in the molding space of the upper mold, whereby a reflective resin is formed on the surface of the lead frame,
The controller is configured to make the temperature of the lower mold higher than the temperature of the upper mold when the reflective resin is formed on the surface of the lead frame.   9. The injection mold apparatus according to claim 8, wherein a recess for accommodating the lead frame is formed on the lower mold.   When the lead frame is accommodated in the lower mold recess, the surface of the lower mold and the surface of the lead frame are located on the same plane, or the surface of the lead frame is more than 0 mm and 0.1 mm or less from the surface of the lower mold The injection mold apparatus according to claim 9, wherein the mold is high. For lead frames with resin,
A lead frame having a plurality of die pads and a plurality of lead portions provided separately from each die pad;
A reflection resin provided on the lead frame and having a plurality of LED element storage portions and made of a thermoplastic resin material;
The reflective resin includes a plurality of reflective resin blocks separated from each other, and at least one LED element storage portion is formed in each reflective resin block, and a strip-shaped exposed region in which a lead frame is exposed between adjacent reflective resin blocks A lead frame with resin, characterized in that is formed.   The lead frame with resin according to claim 11, wherein the thermoplastic resin material is made of a liquid crystal polymer.

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