JP2012238774A - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP2012238774A
JP2012238774A JP2011107759A JP2011107759A JP2012238774A JP 2012238774 A JP2012238774 A JP 2012238774A JP 2011107759 A JP2011107759 A JP 2011107759A JP 2011107759 A JP2011107759 A JP 2011107759A JP 2012238774 A JP2012238774 A JP 2012238774A
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JP
Japan
Prior art keywords
solid
color filter
color
photoelectric conversion
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011107759A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012238774A5 (enExample
Inventor
Hideki Asano
英樹 浅野
Takeharu Tani
武晴 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2011107759A priority Critical patent/JP2012238774A/ja
Priority to KR1020137033140A priority patent/KR101613346B1/ko
Priority to PCT/JP2012/062721 priority patent/WO2012157730A1/en
Publication of JP2012238774A publication Critical patent/JP2012238774A/ja
Priority to US14/076,827 priority patent/US8988565B2/en
Publication of JP2012238774A5 publication Critical patent/JP2012238774A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
JP2011107759A 2011-05-13 2011-05-13 撮像装置 Abandoned JP2012238774A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011107759A JP2012238774A (ja) 2011-05-13 2011-05-13 撮像装置
KR1020137033140A KR101613346B1 (ko) 2011-05-13 2012-05-11 촬상 장치
PCT/JP2012/062721 WO2012157730A1 (en) 2011-05-13 2012-05-11 Imaging apparatus
US14/076,827 US8988565B2 (en) 2011-05-13 2013-11-11 Imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011107759A JP2012238774A (ja) 2011-05-13 2011-05-13 撮像装置

Publications (2)

Publication Number Publication Date
JP2012238774A true JP2012238774A (ja) 2012-12-06
JP2012238774A5 JP2012238774A5 (enExample) 2014-03-06

Family

ID=47177046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011107759A Abandoned JP2012238774A (ja) 2011-05-13 2011-05-13 撮像装置

Country Status (4)

Country Link
US (1) US8988565B2 (enExample)
JP (1) JP2012238774A (enExample)
KR (1) KR101613346B1 (enExample)
WO (1) WO2012157730A1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179577A (ja) * 2013-03-14 2014-09-25 Visera Technologies Company Ltd 固体撮像素子
JP2015037155A (ja) * 2013-08-15 2015-02-23 ソニー株式会社 撮像素子および撮像装置
US9478760B2 (en) 2014-03-28 2016-10-25 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device, imaging module, and imaging apparatus
US9559148B2 (en) 2013-03-29 2017-01-31 Fujifilm Corporation Solid-state imaging device and imaging apparatus
JP2018056589A (ja) * 2017-12-12 2018-04-05 ソニー株式会社 撮像素子および撮像装置
JP2018139272A (ja) * 2017-02-24 2018-09-06 キヤノン株式会社 撮像素子および撮像装置
JP2020507201A (ja) * 2016-12-27 2020-03-05 アレディア フォトレジストのフォトルミネッセンスパッドを含む光電子デバイスの製造方法
JP2022074120A (ja) * 2020-10-30 2022-05-17 三星電子株式会社 色分離レンズアレイを備えるイメージセンサ及びそれを含む電子装置
KR20220086620A (ko) 2019-11-26 2022-06-23 후지필름 가부시키가이샤 고체 촬상 소자
JP2022160898A (ja) * 2021-04-07 2022-10-20 株式会社ジャパンディスプレイ 検出装置及び撮像装置
JP2023152268A (ja) * 2022-03-31 2023-10-16 采▲ぎょく▼科技股▲ふん▼有限公司 イメージセンサとその製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374037B2 (en) 2013-02-27 2019-08-06 The University Of North Carolina At Charlotte Incoherent type-III materials for charge carriers control devices
KR102328769B1 (ko) 2014-06-20 2021-11-18 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
KR102299714B1 (ko) 2014-08-18 2021-09-08 삼성전자주식회사 컬러 필터 격리층을 구비하는 이미지 센서 및 상기 이미지 센서의 제조 방법
KR20160023158A (ko) 2014-08-21 2016-03-03 삼성전자주식회사 광 이용 효율이 향상된 이미지 센서 및 그 제조방법
KR102282218B1 (ko) 2015-01-30 2021-07-26 삼성전자주식회사 3 차원 영상 획득 장치용 결상 광학계 및 이를 포함하는 3 차원 영상 획득 장치
US10203526B2 (en) * 2015-07-06 2019-02-12 The University Of North Carolina At Charlotte Type III hetrojunction—broken gap HJ
US11675115B2 (en) * 2018-10-19 2023-06-13 Visera Technologies Company Limited Optical devices
CN109283664B (zh) * 2018-12-05 2024-02-23 浙江舜宇光学有限公司 光学成像镜片组
US10955597B2 (en) * 2019-01-04 2021-03-23 Visera Technologies Company Limited Optical devices
EP4238187A4 (en) * 2020-11-02 2024-10-09 The Board Of Trustees Of The Leland Stanford Junior University COLOR ROUTERS FOR IMAGE DETECTION

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
JP2010067827A (ja) * 2008-09-11 2010-03-25 Fujifilm Corp 固体撮像素子及び撮像装置
JP2010074218A (ja) * 2008-09-16 2010-04-02 Dainippon Printing Co Ltd 固体撮像素子とその製造方法および固体撮像素子を用いた撮像装置
JP2010212455A (ja) * 2009-03-10 2010-09-24 Nippon Hoso Kyokai <Nhk> 有機光電変換膜及びこれを含む電子素子
JP2010232537A (ja) * 2009-03-27 2010-10-14 Fujifilm Corp 撮像素子
JP2010272654A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 固体撮像装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4828317B2 (ja) 2005-09-29 2011-11-30 富士フイルム株式会社 撮像レンズ
JP4910723B2 (ja) 2007-01-29 2012-04-04 コニカミノルタオプト株式会社 撮像レンズ及び撮像装置並びに携帯端末
KR100940235B1 (ko) 2007-04-24 2010-02-04 삼성테크윈 주식회사 촬영렌즈
JP5478043B2 (ja) 2008-09-11 2014-04-23 富士フイルム株式会社 固体撮像素子及び撮像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
JP2010067827A (ja) * 2008-09-11 2010-03-25 Fujifilm Corp 固体撮像素子及び撮像装置
JP2010074218A (ja) * 2008-09-16 2010-04-02 Dainippon Printing Co Ltd 固体撮像素子とその製造方法および固体撮像素子を用いた撮像装置
JP2010212455A (ja) * 2009-03-10 2010-09-24 Nippon Hoso Kyokai <Nhk> 有機光電変換膜及びこれを含む電子素子
JP2010232537A (ja) * 2009-03-27 2010-10-14 Fujifilm Corp 撮像素子
JP2010272654A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 固体撮像装置およびその製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179577A (ja) * 2013-03-14 2014-09-25 Visera Technologies Company Ltd 固体撮像素子
US9502453B2 (en) 2013-03-14 2016-11-22 Visera Technologies Company Limited Solid-state imaging devices
US9559148B2 (en) 2013-03-29 2017-01-31 Fujifilm Corporation Solid-state imaging device and imaging apparatus
JP2015037155A (ja) * 2013-08-15 2015-02-23 ソニー株式会社 撮像素子および撮像装置
US9478760B2 (en) 2014-03-28 2016-10-25 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device, imaging module, and imaging apparatus
JP7360325B2 (ja) 2016-12-27 2023-10-12 アレディア 光電子デバイスの製造方法
JP2020507201A (ja) * 2016-12-27 2020-03-05 アレディア フォトレジストのフォトルミネッセンスパッドを含む光電子デバイスの製造方法
JP2018139272A (ja) * 2017-02-24 2018-09-06 キヤノン株式会社 撮像素子および撮像装置
JP7071055B2 (ja) 2017-02-24 2022-05-18 キヤノン株式会社 撮像素子および撮像装置
JP2018056589A (ja) * 2017-12-12 2018-04-05 ソニー株式会社 撮像素子および撮像装置
KR20220086620A (ko) 2019-11-26 2022-06-23 후지필름 가부시키가이샤 고체 촬상 소자
US12237352B2 (en) 2019-11-26 2025-02-25 Fujifilm Corporation Solid-state imaging element having partition wall disposed between optical filters
JP2022074120A (ja) * 2020-10-30 2022-05-17 三星電子株式会社 色分離レンズアレイを備えるイメージセンサ及びそれを含む電子装置
JP2022160898A (ja) * 2021-04-07 2022-10-20 株式会社ジャパンディスプレイ 検出装置及び撮像装置
JP7645689B2 (ja) 2021-04-07 2025-03-14 株式会社ジャパンディスプレイ 検出装置及び撮像装置
JP2023152268A (ja) * 2022-03-31 2023-10-16 采▲ぎょく▼科技股▲ふん▼有限公司 イメージセンサとその製造方法
JP7510976B2 (ja) 2022-03-31 2024-07-04 采▲ぎょく▼科技股▲ふん▼有限公司 イメージセンサとその製造方法

Also Published As

Publication number Publication date
US20140071316A1 (en) 2014-03-13
KR20140041548A (ko) 2014-04-04
WO2012157730A1 (en) 2012-11-22
KR101613346B1 (ko) 2016-04-18
US8988565B2 (en) 2015-03-24

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