Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/80—Constructional details of image sensors
  • H10F39/805—Coatings
  • H10F39/8053—Colour filters
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
  • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B13/00—Optical objectives specially designed for the purposes specified below
  • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B3/00—Simple or compound lenses
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/201—Filters in the form of arrays
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
  • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
  • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/80—Constructional details of image sensors
  • H10F39/806—Optical elements or arrangements associated with the image sensors
  • H10F39/8063—Microlenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/80—Constructional details of image sensors
  • H10F39/804—Containers or encapsulations

Definitions

• the thickness of the photoelectric conversion layer may be reduced in comparison with the silicon photoelectric conversion layer and the reduction in the thickness may reduce the cross-talk between pixels.
• a photoelectric conversion layer made of the conventional silicon requires a thickness of about 3 um
• the thickness of a photoelectric conversion layer made of an organic material may be reduced to as thin as about 0.5 um. The reduction in thickness of the photoelectric conversion layer may result in a thinner image sensor.
• the solid-state image sensor for taking an image formed on an imaging surface of the imaging optical system
• the solid-state image sensor is a sensor having a plurality of pixels on a substrate and includes a photoelectric conversion layer made of an organic material and a color filter layer disposed above the photoelectric conversion layer with color filters of two or more colors and a transparent separation wall separating each of the color filters of the respective colors, wherein:
• the photoelectric conversion layer has a thickness of 0.1 urn to 1 urn;
• Figure 4A is a cross-sectional view of an image sensor having color filters with separation walls used in simulation, illustrating the structure thereof.
• Figure 8 is a graph illustrating simulation results of incident angle and amount of incident light in the blue pixel of the structure shown in Figure 4A (pixel pitch of 1.2um) .
• the photoelectric conversion layer 14 made of an organic material is formed in a film with a thickness in the range from 0.1 urn to 1.0 urn.
• a thinner layer thickness is more effective for preventing color mixture, but there exists a trade-off between the layer thickness and light absorption, and the actual optimum layer thickness may be about 0.5 urn.
• 21g, and 21b is formed substantially in a grid pattern in the plan view of Figure 3 to individually enclose each of them.
• the film thicknesses of the color filters 21r, 21g, and 21b of the color filter layer CF' are taken as 0.7 um, 0.5 um, and 0.5 um respectively.
• a structure in which planarization layer 30 is provided between the color filter CF' and microlenses 31 is assumed, and the thickness of the planarization layer is defined as the thickness between the red color filter and microlens 31.
• the lens thickness "tm" of the microlenses is taken as 0.6 um.
• the thickness of the planarization layer is 1 to 2 um, but calculations were made for three different structures in which the planarization layer has thicknesses of 0 um, 0.5 um, and 1.0 um respectively in the present simulation.
• the planarization layer 30 is a layer required for stably forming the microlenses due to the fact that the surface of the color filter layer CF' becomes uneven in a currently common manufacturing process and color filters of different colors have different thicknesses.
• the general thickness of the planarization layer is rather thick ranging from 1 to 2 um, technological advancement is expected in materials used for the planarization layer and the planarization may be achieved with a planarization layer having a thickness less than 1 um in the future.
• a planarization layer of 0 um is inconceivable in practice and a thickness of about 0.5 um, at best, may be the film thickness limit (minimum film thickness) .
• Figures 9 to 11 show simulation results of the structure in which color filter with microlenses shown in Figure 4B (without the separation wall) is provided and the average thickness of the planarization layer t h is taken as 0.5 urn in the cases where the pixel pitch is taken as 1.8, 1.4, and 1.2 respectively.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Engineering & Computer Science (AREA)
• Multimedia (AREA)
• Signal Processing (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Studio Devices (AREA)

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• 2011
  • 2011-05-13 JP JP2011107759A patent/JP2012238774A/ja not_active Abandoned
• 2012
  • 2012-05-11 KR KR1020137033140A patent/KR101613346B1/ko active Active
  • 2012-05-11 WO PCT/JP2012/062721 patent/WO2012157730A1/en not_active Ceased
• 2013
  • 2013-11-11 US US14/076,827 patent/US8988565B2/en active Active

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