JP2012235096A - 放熱基板 - Google Patents
放熱基板 Download PDFInfo
- Publication number
- JP2012235096A JP2012235096A JP2012092782A JP2012092782A JP2012235096A JP 2012235096 A JP2012235096 A JP 2012235096A JP 2012092782 A JP2012092782 A JP 2012092782A JP 2012092782 A JP2012092782 A JP 2012092782A JP 2012235096 A JP2012235096 A JP 2012235096A
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- JP
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- Prior art keywords
- heat dissipation
- printed circuit
- circuit board
- heat
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 5
- 239000011256 inorganic filler Substances 0.000 claims description 5
- 229920002050 silicone resin Polymers 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】本発明による放熱基板は、金属材質からなり、上面に発光素子が実装される印刷回路基板と、前記印刷回路基板の下面に備えられ、前記発光素子から前記印刷回路基板に伝導された熱の伝達を受けて外部に放出する放熱板と、前記印刷回路基板の側面に形成され、前記印刷回路基板に伝導された熱を前記印刷回路基板の側面を介して外部に放出する放熱層と、を含む。
【選択図】図2
Description
110 発光素子
120 印刷回路基板
121 回路配線
125 放熱層
130 放熱板
131 放熱本体
132 放熱ピン
Claims (5)
- 金属材質からなり、上面に発光素子が実装される印刷回路基板と、
前記印刷回路基板の下面に備えられ、前記発光素子から前記印刷回路基板に伝導された熱の伝達を受けて外部に放出する放熱板と、
前記印刷回路基板の側面に形成され、前記印刷回路基板に伝導された熱を、前記印刷回路基板の側面を介して外部に放出する放熱層と、を含む放熱基板。 - 前記放熱層は、前記印刷回路基板の側面に放熱コーティング剤を塗布して形成される薄膜層を含む請求項1に記載の放熱基板。
- 前記放熱コーティング剤は、前記印刷回路基板との接合性を向上させるための高耐熱性の変性シリコーン樹脂と、高放熱性の無機物フィラー及び金属フィラーを含む有/無機複合剤と、を含む請求項2に記載の放熱基板。
- 前記印刷回路基板の上面に形成される回路配線を含み、前記発光素子は前記回路配線と電気的に連結される請求項1に記載の放熱基板。
- 前記放熱板は、前記印刷回路基板の下面に密着して設けられる放熱本体と、前記放熱本体から下側に突出された複数の放熱ピンと、を含む請求項1に記載の放熱基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110040193A KR101214762B1 (ko) | 2011-04-28 | 2011-04-28 | 방열 기판 |
KR10-2011-0040193 | 2011-04-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012235096A true JP2012235096A (ja) | 2012-11-29 |
Family
ID=47067729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012092782A Pending JP2012235096A (ja) | 2011-04-28 | 2012-04-16 | 放熱基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120275116A1 (ja) |
JP (1) | JP2012235096A (ja) |
KR (1) | KR101214762B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742252B (zh) * | 2014-12-09 | 2019-05-07 | 台达电子工业股份有限公司 | 一种功率模块及其制造方法 |
KR101693423B1 (ko) * | 2015-05-19 | 2017-01-05 | 한국광기술원 | Led 패키지 및 이의 제조방법 |
CN107426949A (zh) * | 2017-07-13 | 2017-12-01 | 安徽大鸿智能科技有限公司 | Led显示屏散热装置 |
CN113097079B (zh) * | 2021-03-31 | 2023-11-17 | 光华临港工程应用技术研发(上海)有限公司 | 一种功率半导体模块制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007246602A (ja) * | 2006-03-14 | 2007-09-27 | Asahi Kasei Corp | 変性シリコーンの製造方法 |
JP2008120848A (ja) * | 2006-11-08 | 2008-05-29 | Sumitomo Osaka Cement Co Ltd | 無機酸化物透明分散液と透明複合体およびその製造方法、発光素子封止用組成物並びに発光素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4837200A (en) * | 1987-07-24 | 1989-06-06 | Kanzaki Paper Manufacturing Co., Ltd. | Image-receiving sheet for thermal transfer printing |
US5149762A (en) * | 1988-11-08 | 1992-09-22 | Mitsubishi Rayon Company Ltd. | Process for preparation of silicon-modified thermoplastic resin |
KR200338520Y1 (ko) * | 2003-10-13 | 2004-01-16 | 주식회사 퓨텍몰드 | 방열성능이 향상된 인쇄회로기판 |
KR100775449B1 (ko) * | 2005-06-30 | 2007-11-12 | 주식회사에스엘디 | 방열층 구조를 가진 회로 기판 |
US7550319B2 (en) * | 2005-09-01 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof |
EP1961282B1 (de) * | 2005-12-13 | 2010-02-17 | B2 Electronic GmbH | Anordnung mit zumindest einem elektronischen bauteil |
KR20090017297A (ko) * | 2007-08-14 | 2009-02-18 | 세종메탈 주식회사 | 회로 기판 조립체 |
JP5220373B2 (ja) * | 2007-09-25 | 2013-06-26 | 三洋電機株式会社 | 発光モジュール |
KR100957218B1 (ko) * | 2007-12-27 | 2010-05-11 | 삼성전기주식회사 | 발광 다이오드 유니트 |
JP4825259B2 (ja) * | 2008-11-28 | 2011-11-30 | 三菱電機株式会社 | 電力用半導体モジュール及びその製造方法 |
KR101046125B1 (ko) * | 2009-01-20 | 2011-07-01 | 삼성전기주식회사 | 인쇄회로기판 코팅장치 |
-
2011
- 2011-04-28 KR KR1020110040193A patent/KR101214762B1/ko not_active IP Right Cessation
-
2012
- 2012-04-16 JP JP2012092782A patent/JP2012235096A/ja active Pending
- 2012-04-18 US US13/449,486 patent/US20120275116A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007246602A (ja) * | 2006-03-14 | 2007-09-27 | Asahi Kasei Corp | 変性シリコーンの製造方法 |
JP2008120848A (ja) * | 2006-11-08 | 2008-05-29 | Sumitomo Osaka Cement Co Ltd | 無機酸化物透明分散液と透明複合体およびその製造方法、発光素子封止用組成物並びに発光素子 |
Also Published As
Publication number | Publication date |
---|---|
KR101214762B1 (ko) | 2013-01-21 |
US20120275116A1 (en) | 2012-11-01 |
KR20120122176A (ko) | 2012-11-07 |
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