201218467 VI. Description of the Invention: [Technical Field of the Invention]  The present invention relates to a light-emitting element, and more particularly to a semiconductor light-emitting element. [Prior Art·]  Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources. 0  Since heat has a great influence on the operation of the light-emitting chip, if it is not released in time, the light-emitting efficiency of the light-emitting chip is significantly lowered, and the life of the light-emitting chip is affected. However, the conventional light-emitting diode substrate for carrying a light-emitting chip is usually made of plastic, and its heat conductivity is low (usually less than 10 W/mK), which is obviously difficult to meet the heat-dissipating demand of the light-emitting chip. Especially for the high-power light-emitting diodes with increasing heat generation, the heat-dissipation bottleneck of the conventional plastic substrate is more prominent. SUMMARY OF THE INVENTION  Therefore, it is necessary to provide a light-emitting element having better heat dissipation.  A light-emitting element comprising a semiconductor light source and a substrate carrying a semiconductor light source, wherein the substrate has a heat conduction channel, and the thermal conductivity of the heat conduction channel is higher than the thermal conductivity of the substrate.  Since a material having a high thermal conductivity is provided in the substrate, the heat conduction capability of the substrate can be effectively improved, thereby accelerating the heat dissipation of the semiconductor light source, so that it can work stably. [Embodiment] 099137173 Form No. A0101 Page 3 of 17 0992064852-0 201218467  Referring to Fig. 1, a light-emitting element 10 of a first embodiment of the present invention is shown. In this embodiment, the light-emitting element 10 is a light-emitting diode, and includes a substrate 20, two pins 30 fixed on the surface of the substrate 20, a semiconductor light source 40 electrically connecting the two pins 30, and a package covering the semiconductor light source 40. Body 50. The substrate 20 is made of plastic (e.g., glass epoxy resin, glass benzene resin, etc.) or ceramic (e.g., alumina, yttria, tantalum nitride, etc.). Depending on the material selected, the thermal conductivity of the substrate 20 is also different, and the range is between 0.1 and 30 W/mK. The substrate 20 is provided with a plurality of uniformly distributed channels (not shown), wherein each of the channels penetrates the top surface and the bottom surface of the substrate 20 in the thickness direction of the substrate 20. Each channel is filled with a highly thermally conductive material such as gold, silver, copper, or the like to form a plurality of thermally conductive passages 22. The thermal conductivity of the substrate 20 is set to \, and the thermal conductivity of the thermally conductive material in the heat conduction passage 22 is , and the thermal conductivity per unit volume (lmm*lmm*lmm) on the substrate 20 can be expressed by the following formula: [〇〇〇8] κ=κ1ν1+κ2ν2  where is the volume percentage of the substrate 20 material per unit volume, and V2 is the volume percentage of the heat conductive material per unit volume.
 If there are n channels in the unit volume of the substrate 20, and the radius of each channel is R, the above formula can be converted into:  K = n^R2K2 + (l-n^R2) K1
 It can be seen that the thermal conductivity per unit volume of the substrate 20 is related to the number of channels, the pore diameter, and the thermal conductivity of the thermally conductive material. For example, let K^SW/mK, K2 = 428W/mk (select gold as the heat conductive material), n = 9, R = 0.15mm, substituting into the above formula, we can get K = 273W/mK. Obviously, the thermal conductivity of the substrate 20 filled with the heat conductive material 099137173 Form No. A0101 Page 4 / 17 page 0992064852-0 201218467 is much higher than that of the substrate 20 which is not filled with the heat conductive material. Therefore, by filling the substrate 20 with the heat conductive material, the heat transfer capability of the substrate 20 can be greatly improved, and the normal operation of the semiconductor light source 4 can be ensured.  The two pins 30 are attached to the substrate 20 and spaced apart from each other. Each of the pins 3 includes an input section 32 fixed to the top surface of the substrate 20, an external section 34 projecting outwardly from the side of the substrate 2, and a connecting section 36 connecting the input section 32 and the external section 34. The circumscribed section 34 is for connection to an external circuit structure (not shown) for transmitting current through the connecting section 36 to the input section 32. The connecting section 36 is attached to the side φ of the substrate 20, which is perpendicular to the circumscribed external section 34 and the input section 32. The input section 32 is for electrically connecting to the semiconductor light source 4 to input current into the semiconductor light source 40. The semiconductor light source 4 is bonded to the top surface of the substrate 20 and between the input sections 32 of the two pins 30. In this embodiment, the semiconductor light source 40 is a light-emitting chip, which can be made of a semiconductor luminescent material such as a smear, an indium nitride, or a gallium arsenide to lightly emit light. The semiconductor light source 40 interprets the two gold wires 60 to the input segments 32 of the two pins 30, respectively, to complete the electrical connection to the pins 30. The sealing body is made of transparent materials such as glass, epoxy resin, polycarbonate, and polymethyl methacrylate vinegar. The outline of the package 50 is comparable to the outline of the substrate 20, which covers the semiconductor light source 40 and the gold wire 60 for protection. Since the heat at the location near the semiconductor light source 40 is higher than the heat away from the semiconductor light source 40, the size and arrangement of the uniformly distributed thermally conductive passages 22 described above can be varied to provide better heat dissipation. For example, the distance between the heat-conducting channels 22 near the semiconductor light source 40 can be reduced as shown in FIG. 2 '099137173 close to the heat-conducting channel 22 at the position of the semiconductor light source 40. Form number Α 0101 Page 5 / 17 pages 0992064852-0 201218467 The distribution density is greater than the distribution density of the heat-conducting channel 22 at a position away from the semiconductor light source; or the heat-conducting channel 22 near the semiconductor light source 40 is thickened as shown in FIG. 3 to make the diameter of the heat-conducting channel 22 near the position of the semiconductor light source 4? It is larger than the diameter of the heat conduction channel 22 at a position away from the semiconductor light source 4〇  When metal is used as the heat conductive material, since these heat conduction channels 22 penetrate the substrate 20 and some of the top portions thereof are directly connected to the pins 30, there is a possibility that The influence of various external factors causes the two pins 3〇 to be electrically connected to each other through the heat conduction channel 22 to cause a short circuit (for example, when a conductive conductive paste having a large area is coated on the bottom surface of the substrate 2). Therefore, in order to avoid this, the above heat conduction passage 22 can be further improved. Referring to Figure 4, the thermally conductive channel 22 in the substrate 2 includes two different first thermally conductive channels 220 and a second thermally conductive channel 222. The first heat conduction channel 220 extends downward from the top surface of the substrate 20 and terminates at a position inside the substrate 20 near the bottom surface of the substrate 20. The second heat conduction channel 222 extends upward from the bottom surface of the substrate 20 and terminates near the top surface of the substrate 20 inside the substrate 2 The first heat conduction passage 220 and the second heat conduction passage 222 are alternately disposed inside the substrate 20 and spaced apart from each other. Since neither the first heat conduction channel 220 nor the second heat conduction channel 222 penetrates through the substrate 20, even if a conductive material is adhered to the bottom surface of the substrate 20, the conduction with the lead 3〇 does not occur, so that the application of the light-emitting body is further improved. Safety.  Of course, since the heat conduction channel 22 itself has electrical conductivity, it can also directly serve as a conductive path of the light-emitting element 10 as shown in FIG. 5 instead of the original pin 30 structure. The top end and the bottom end of the plurality of heat conduction channels 22 on each side of the substrate 20 are respectively connected by two pads 24 to be respectively connected to the semiconductor light source 40 and the outside. 099137173 Form No. A0101 Page 6 of 17 0992064852-0 201218467  It can be understood that the structure of the above heat conduction channel 22 is not limited to the LED substrate of the light emitting diode, and the same is applicable to the bonding LED. The circuit board shown in Fig. 6' shows a light-emitting element 1 different from the foregoing embodiments. The light-emitting element 1 includes a substrate 2A and a semiconductor light source i〇b fixed to the substrate 2A. The semiconductor light source 1b may be any one of the above-described embodiments or a light-emitting diode which does not have the heat-conducting passage 22. The latter is used in the present embodiment. The substrate 20a in this embodiment is a circuit board for electrically connecting to the semiconductor light source 10b, which corresponds to the semiconductor
A plurality of through holes (not shown) are formed at the position of the light source 1 Ob, and each of the through holes is filled with a highly thermally conductive material such as gold, silver, copper, or the like which forms the heat conduction path 22a. The substrate 2〇a is attached to the substrate of the semi-conducting light source 1〇b
The heat of the semiconductor light (4) is rapidly propagated through its heat conduction path 22a, thereby accelerating the heat dissipation of the semiconductor light brain & the substrate 20a is simultaneously bonded to the pin of the semiconductor light source (10) to carry current The heat transfer passage 22a in the substrate 2Ga is not limited to the structure disclosed in FIG. 6, and may be changed to the same structure as that disclosed in the respective embodiments of FIGS.  In summary, the present invention meets the requirements of the invention patent, and the United States legally filed a patent application. However, the above description is only a preferred embodiment of the present invention, and those who are familiar with the skill of the present invention are in the spirit of the present invention. Equivalent modifications or variations are to be included in the scope of the following claims. [Simplified Description of the Drawings] FIG. 1 shows a cross-sectional view of a light-emitting element of the first embodiment of the present invention. Cross-sectional view of a light-emitting element according to a second embodiment of the invention  FIG. 3 shows a solid-state 099137173 of a light-emitting element according to a third embodiment of the present invention. Form No. A0101 笫7/Bundle 17-Hundred Diagram 0992064852-0 201218467  Figure 4 Fig. 5 is a cross-sectional view showing a light-emitting element according to a fifth embodiment of the present invention.  Figure 6 is a view showing a sixth embodiment of the present invention.  [Main element symbol description] Light-emitting element: 10  Semiconductor light source: 10b  Substrate: 20  Substrate: 20a  Substrate: 20b  Thermal conduction channel : 22  Thermal conduction channel: 22a  First thermal conduction channel: 220  Second thermal conduction channel: 222  Pad: 24  Pin: 30  Pin: 30b [0037 Input section: 32  External section: 34  Connection section: 36  Semiconductor light source: 40 Form number A0101 099137173 Page 8 of 17 0992064852-0 201218467  Package: 50 [0042 ] Gold line: 60
099137173 Form No. A0101 Page 9 of 17 0992064852-0