TW201218467A - Light emitting element - Google Patents

Light emitting element Download PDF

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Publication number
TW201218467A
TW201218467A TW99137173A TW99137173A TW201218467A TW 201218467 A TW201218467 A TW 201218467A TW 99137173 A TW99137173 A TW 99137173A TW 99137173 A TW99137173 A TW 99137173A TW 201218467 A TW201218467 A TW 201218467A
Authority
TW
Taiwan
Prior art keywords
substrate
light source
heat
semiconductor light
heat conduction
Prior art date
Application number
TW99137173A
Other languages
Chinese (zh)
Inventor
Ying-Chieh Lu
An-Chi Wei
Hsin-Fei Huang
Original Assignee
Foxsemicon Integrated Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxsemicon Integrated Tech Inc filed Critical Foxsemicon Integrated Tech Inc
Priority to TW99137173A priority Critical patent/TW201218467A/en
Publication of TW201218467A publication Critical patent/TW201218467A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

A light emitting element includes a semiconductor light source and a substrate supporting the semiconductor light source. The substrate has a plurality of light-conducting passages which have heat conductivity larger than that of the substrate. The substrate can provide rapid heat conduction to the semiconductor light source.

Description

201218467 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a light-emitting element, and more particularly to a semiconductor light-emitting element. [Prior Art·] [0002] Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources. 0 [0003] Since heat has a great influence on the operation of the light-emitting chip, if it is not released in time, the light-emitting efficiency of the light-emitting chip is significantly lowered, and the life of the light-emitting chip is affected. However, the conventional light-emitting diode substrate for carrying a light-emitting chip is usually made of plastic, and its heat conductivity is low (usually less than 10 W/mK), which is obviously difficult to meet the heat-dissipating demand of the light-emitting chip. Especially for the high-power light-emitting diodes with increasing heat generation, the heat-dissipation bottleneck of the conventional plastic substrate is more prominent. SUMMARY OF THE INVENTION [0004] Therefore, it is necessary to provide a light-emitting element having better heat dissipation. [0005] A light-emitting element comprising a semiconductor light source and a substrate carrying a semiconductor light source, wherein the substrate has a heat conduction channel, and the thermal conductivity of the heat conduction channel is higher than the thermal conductivity of the substrate. [0006] Since a material having a high thermal conductivity is provided in the substrate, the heat conduction capability of the substrate can be effectively improved, thereby accelerating the heat dissipation of the semiconductor light source, so that it can work stably. [Embodiment] 099137173 Form No. A0101 Page 3 of 17 0992064852-0 201218467 [0007] Referring to Fig. 1, a light-emitting element 10 of a first embodiment of the present invention is shown. In this embodiment, the light-emitting element 10 is a light-emitting diode, and includes a substrate 20, two pins 30 fixed on the surface of the substrate 20, a semiconductor light source 40 electrically connecting the two pins 30, and a package covering the semiconductor light source 40. Body 50. The substrate 20 is made of plastic (e.g., glass epoxy resin, glass benzene resin, etc.) or ceramic (e.g., alumina, yttria, tantalum nitride, etc.). Depending on the material selected, the thermal conductivity of the substrate 20 is also different, and the range is between 0.1 and 30 W/mK. The substrate 20 is provided with a plurality of uniformly distributed channels (not shown), wherein each of the channels penetrates the top surface and the bottom surface of the substrate 20 in the thickness direction of the substrate 20. Each channel is filled with a highly thermally conductive material such as gold, silver, copper, or the like to form a plurality of thermally conductive passages 22. The thermal conductivity of the substrate 20 is set to \, and the thermal conductivity of the thermally conductive material in the heat conduction passage 22 is [2], and the thermal conductivity per unit volume (lmm*lmm*lmm) on the substrate 20 can be expressed by the following formula: [〇〇〇8] κ=κ1ν1+κ2ν2 [0009] where is the volume percentage of the substrate 20 material per unit volume, and V2 is the volume percentage of the heat conductive material per unit volume.

[0010] If there are n channels in the unit volume of the substrate 20, and the radius of each channel is R, the above formula can be converted into: [0011] K = n^R2K2 + (l-n^R2) K1

[0012] It can be seen that the thermal conductivity per unit volume of the substrate 20 is related to the number of channels, the pore diameter, and the thermal conductivity of the thermally conductive material. For example, let K^SW/mK, K2 = 428W/mk (select gold as the heat conductive material), n = 9, R = 0.15mm, substituting into the above formula, we can get K = 273W/mK. Obviously, the thermal conductivity of the substrate 20 filled with the heat conductive material 099137173 Form No. A0101 Page 4 / 17 page 0992064852-0 201218467 is much higher than that of the substrate 20 which is not filled with the heat conductive material. Therefore, by filling the substrate 20 with the heat conductive material, the heat transfer capability of the substrate 20 can be greatly improved, and the normal operation of the semiconductor light source 4 can be ensured. [0013] The two pins 30 are attached to the substrate 20 and spaced apart from each other. Each of the pins 3 includes an input section 32 fixed to the top surface of the substrate 20, an external section 34 projecting outwardly from the side of the substrate 2, and a connecting section 36 connecting the input section 32 and the external section 34. The circumscribed section 34 is for connection to an external circuit structure (not shown) for transmitting current through the connecting section 36 to the input section 32. The connecting section 36 is attached to the side φ of the substrate 20, which is perpendicular to the circumscribed external section 34 and the input section 32. The input section 32 is for electrically connecting to the semiconductor light source 4 to input current into the semiconductor light source 40. The semiconductor light source 4 is bonded to the top surface of the substrate 20 and between the input sections 32 of the two pins 30. In this embodiment, the semiconductor light source 40 is a light-emitting chip, which can be made of a semiconductor luminescent material such as a smear, an indium nitride, or a gallium arsenide to lightly emit light. The semiconductor light source 40 interprets the two gold wires 60 to the input segments 32 of the two pins 30, respectively, to complete the electrical connection to the pins 30. The sealing body is made of transparent materials such as glass, epoxy resin, polycarbonate, and polymethyl methacrylate vinegar. The outline of the package 50 is comparable to the outline of the substrate 20, which covers the semiconductor light source 40 and the gold wire 60 for protection. Since the heat at the location near the semiconductor light source 40 is higher than the heat away from the semiconductor light source 40, the size and arrangement of the uniformly distributed thermally conductive passages 22 described above can be varied to provide better heat dissipation. For example, the distance between the heat-conducting channels 22 near the semiconductor light source 40 can be reduced as shown in FIG. 2 '099137173 close to the heat-conducting channel 22 at the position of the semiconductor light source 40. Form number Α 0101 Page 5 / 17 pages 0992064852-0 201218467 The distribution density is greater than the distribution density of the heat-conducting channel 22 at a position away from the semiconductor light source; or the heat-conducting channel 22 near the semiconductor light source 40 is thickened as shown in FIG. 3 to make the diameter of the heat-conducting channel 22 near the position of the semiconductor light source 4? It is larger than the diameter of the heat conduction channel 22 at a position away from the semiconductor light source 4〇 [0015] When metal is used as the heat conductive material, since these heat conduction channels 22 penetrate the substrate 20 and some of the top portions thereof are directly connected to the pins 30, there is a possibility that The influence of various external factors causes the two pins 3〇 to be electrically connected to each other through the heat conduction channel 22 to cause a short circuit (for example, when a conductive conductive paste having a large area is coated on the bottom surface of the substrate 2). Therefore, in order to avoid this, the above heat conduction passage 22 can be further improved. Referring to Figure 4, the thermally conductive channel 22 in the substrate 2 includes two different first thermally conductive channels 220 and a second thermally conductive channel 222. The first heat conduction channel 220 extends downward from the top surface of the substrate 20 and terminates at a position inside the substrate 20 near the bottom surface of the substrate 20. The second heat conduction channel 222 extends upward from the bottom surface of the substrate 20 and terminates near the top surface of the substrate 20 inside the substrate 2 The first heat conduction passage 220 and the second heat conduction passage 222 are alternately disposed inside the substrate 20 and spaced apart from each other. Since neither the first heat conduction channel 220 nor the second heat conduction channel 222 penetrates through the substrate 20, even if a conductive material is adhered to the bottom surface of the substrate 20, the conduction with the lead 3〇 does not occur, so that the application of the light-emitting body is further improved. Safety. [0016] Of course, since the heat conduction channel 22 itself has electrical conductivity, it can also directly serve as a conductive path of the light-emitting element 10 as shown in FIG. 5 instead of the original pin 30 structure. The top end and the bottom end of the plurality of heat conduction channels 22 on each side of the substrate 20 are respectively connected by two pads 24 to be respectively connected to the semiconductor light source 40 and the outside. 099137173 Form No. A0101 Page 6 of 17 0992064852-0 201218467 [0017] It can be understood that the structure of the above heat conduction channel 22 is not limited to the LED substrate of the light emitting diode, and the same is applicable to the bonding LED. The circuit board shown in Fig. 6' shows a light-emitting element 1 different from the foregoing embodiments. The light-emitting element 1 includes a substrate 2A and a semiconductor light source i〇b fixed to the substrate 2A. The semiconductor light source 1b may be any one of the above-described embodiments or a light-emitting diode which does not have the heat-conducting passage 22. The latter is used in the present embodiment. The substrate 20a in this embodiment is a circuit board for electrically connecting to the semiconductor light source 10b, which corresponds to the semiconductor

A plurality of through holes (not shown) are formed at the position of the light source 1 Ob, and each of the through holes is filled with a highly thermally conductive material such as gold, silver, copper, or the like which forms the heat conduction path 22a. The substrate 2〇a is attached to the substrate of the semi-conducting light source 1〇b

The heat of the semiconductor light (4) is rapidly propagated through its heat conduction path 22a, thereby accelerating the heat dissipation of the semiconductor light brain & the substrate 20a is simultaneously bonded to the pin of the semiconductor light source (10) to carry current The heat transfer passage 22a in the substrate 2Ga is not limited to the structure disclosed in FIG. 6, and may be changed to the same structure as that disclosed in the respective embodiments of FIGS. [0018] In summary, the present invention meets the requirements of the invention patent, and the United States legally filed a patent application. However, the above description is only a preferred embodiment of the present invention, and those who are familiar with the skill of the present invention are in the spirit of the present invention. Equivalent modifications or variations are to be included in the scope of the following claims. [Simplified Description of the Drawings] FIG. 1 shows a cross-sectional view of a light-emitting element of the first embodiment of the present invention. Cross-sectional view of a light-emitting element according to a second embodiment of the invention [0021] FIG. 3 shows a solid-state 099137173 of a light-emitting element according to a third embodiment of the present invention. Form No. A0101 笫7/Bundle 17-Hundred Diagram 0992064852-0 201218467 [0022] Figure 4 Fig. 5 is a cross-sectional view showing a light-emitting element according to a fifth embodiment of the present invention. [0024] Figure 6 is a view showing a sixth embodiment of the present invention. [0025] [Main element symbol description] Light-emitting element: 10 [0026] Semiconductor light source: 10b [0027] Substrate: 20 [0028] Substrate: 20a [0029] Substrate: 20b [0030] Thermal conduction channel : 22 [0031] Thermal conduction channel: 22a [0032] First thermal conduction channel: 220 [0033] Second thermal conduction channel: 222 [0034] Pad: 24 [0035] Pin: 30 [0036] Pin: 30b [0037 Input section: 32 [0038] External section: 34 [0039] Connection section: 36 [0040] Semiconductor light source: 40 Form number A0101 099137173 Page 8 of 17 0992064852-0 201218467 [0041] Package: 50 [0042 ] Gold line: 60

099137173 Form No. A0101 Page 9 of 17 0992064852-0

Claims (1)

  1. 201218467 VII. Patent application scope: 1. A light-emitting element comprising a semiconductor light source and a substrate carrying the semiconductor light source, wherein the improvement is that a heat conduction channel is formed in the substrate, and the heat conduction rate of the heat conduction channel is higher than the thermal conductivity of the substrate. 2. The light-emitting element according to claim 1, wherein the plurality of heat-conducting channels extend in a thickness direction of the substrate. 3. The light-emitting element of claim 2, wherein the heat-dissipating channel adjacent to the semiconductor light source has a distribution density greater than a distribution density of the heat-conducting channel away from the semiconductor light source. 4. The light-emitting element of claim 2, wherein the diameter of the heat-conducting passage adjacent to the semiconductor light source is larger than the diameter of the heat-conducting passage away from the semiconductor light source. 5. The light-emitting element of claim 2, wherein the heat-conducting passage extends from the surface of the substrate carrying the semiconductor light source through the opposite surface of the substrate. 6. The illuminating element of claim 2, wherein the heat conduction channel comprises a first heat conduction channel and a second heat conduction channel, and the first heat conduction channel and the second heat conduction channel are alternately distributed in the substrate. 7. The light-emitting element of claim 6, wherein the first heat conduction path extends from a surface of the substrate carrying the semiconductor light source and terminates at a position inside the substrate near the opposite surface of the substrate, the second heat conduction channel is opposite from the substrate The other surface extends and terminates at a surface of the substrate adjacent the substrate carrying the semiconductor light source. 8. The light-emitting element of claim 2, wherein the ends of the heat-conducting channels are connected by pads to form conductive paths. 9. The light-emitting element according to any one of claims 2 to 8, wherein the light-emitting 099137173 form number A0101 page 10/total 17 page 0992064852-0 201218467 component is a light-emitting diode 'semiconductor light source for light-emitting chip electrical connection The pin of the semiconductor light source. 10. The illuminating cavity light source according to any one of claims 2 to 8, which is a light emitting diode, and the substrate is a circuit board. On the substrate, wherein the semiconductor
    099137173 Form nickname A0101 Page 11 of 17 0992064852-0
TW99137173A 2010-10-29 2010-10-29 Light emitting element TW201218467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW99137173A TW201218467A (en) 2010-10-29 2010-10-29 Light emitting element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW99137173A TW201218467A (en) 2010-10-29 2010-10-29 Light emitting element
JP2011234777A JP2012099814A (en) 2010-10-29 2011-10-26 Light-emitting device

Publications (1)

Publication Number Publication Date
TW201218467A true TW201218467A (en) 2012-05-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW99137173A TW201218467A (en) 2010-10-29 2010-10-29 Light emitting element

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TW (1) TW201218467A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103872029A (en) * 2012-12-14 2014-06-18 鸿富锦精密工业(深圳)有限公司 Light emitting diode module
TWI550920B (en) * 2012-12-13 2016-09-21 鴻海精密工業股份有限公司 Light-emitting diode
TWI668495B (en) * 2018-04-13 2019-08-11 大陸商業成科技〈成都〉有限公司 Heat dissipating structure, electronic device and display device using same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5755196B2 (en) * 2012-07-27 2015-07-29 三菱電機株式会社 power semiconductor device
JP6102408B2 (en) * 2013-03-27 2017-03-29 豊田合成株式会社 Light emitting device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550920B (en) * 2012-12-13 2016-09-21 鴻海精密工業股份有限公司 Light-emitting diode
CN103872029A (en) * 2012-12-14 2014-06-18 鸿富锦精密工业(深圳)有限公司 Light emitting diode module
TWI668495B (en) * 2018-04-13 2019-08-11 大陸商業成科技〈成都〉有限公司 Heat dissipating structure, electronic device and display device using same

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JP2012099814A (en) 2012-05-24

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