JP2012099814A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2012099814A
JP2012099814A JP2011234777A JP2011234777A JP2012099814A JP 2012099814 A JP2012099814 A JP 2012099814A JP 2011234777 A JP2011234777 A JP 2011234777A JP 2011234777 A JP2011234777 A JP 2011234777A JP 2012099814 A JP2012099814 A JP 2012099814A
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substrate
conduction path
heat conduction
light emitting
light source
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Eiketsu Lu
英傑 呂
An-Ki Wei
安▲キ▼ 韋
Kin-Bi Hwang
▲きん▼斐 黄
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Foxsemicon Integrated Technology Inc
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Foxsemicon Integrated Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device with excellent thermal conductivity.SOLUTION: A light-emitting device of the present invention comprises a semiconductor light source and a substrate holding the semiconductor light source. A plurality of passages are provided in the substrate, and a thermal conduction path is formed in each passage by filling a material with excellent thermal conductivity. Since the thermal conductivity of the thermal conduction path is higher than that of the substrate, the thermal conductivity of the substrate can be effectively improved, thereby ensuring the normal operation of the semiconductor light source.

Description

本発明は、発光素子に関し、特に半導体発光素子に関するものである。   The present invention relates to a light emitting device, and more particularly to a semiconductor light emitting device.

発光ダイオード（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ，ＬＥＤ）は、低消費電力、長寿命である等の利点を有するので、広く応用される。しかし、高い輝度、高いパワーの発光ダイオードは、発熱量が大きく、即時に放熱しなければ、発光ダイオードの温度が上昇して、発光効率が下げるばかりでなく、部品の損傷ももたらす。従来の発光ダイオードにおいて、発光チップを支持する基板は、通常熱伝導率が低いプラスチックからなるので、前記発光チップの放熱需要を満足できない。   Light emitting diodes (LEDs) are widely used because they have advantages such as low power consumption and long life. However, a light emitting diode with high brightness and high power generates a large amount of heat, and if it does not dissipate heat immediately, the temperature of the light emitting diode rises, not only lowering the light emission efficiency, but also causing damage to components. In the conventional light emitting diode, the substrate supporting the light emitting chip is usually made of a plastic having a low thermal conductivity, so that the heat dissipation demand of the light emitting chip cannot be satisfied.

以上の問題点に鑑みて、本発明は、優れた熱伝導率を有する発光素子を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a light-emitting element having excellent thermal conductivity.

本発明に係る発光素子は、半導体光源と、前記半導体光源を保持する基板と、を備え、前記基板内には熱伝導路が形成され、前記熱伝導路の熱伝導率は前記基板の熱伝導率より高い。   A light emitting device according to the present invention includes a semiconductor light source and a substrate that holds the semiconductor light source, a heat conduction path is formed in the substrate, and the thermal conductivity of the heat conduction path is the heat conduction of the substrate. Higher than rate.

本発明に係る発光素子において、基板内には熱伝導路が形成され、且つ前記熱伝導路の熱伝導率が前記基板の熱伝導率より高いので、前記基板の熱伝導率を効果的に高め、半導体光源の熱を即時に放熱して、前記半導体光源の正常な動作を確保することができる。   In the light emitting device according to the present invention, a thermal conduction path is formed in the substrate, and the thermal conductivity of the thermal conduction path is higher than the thermal conductivity of the substrate, so that the thermal conductivity of the substrate is effectively increased. The heat of the semiconductor light source can be immediately dissipated to ensure the normal operation of the semiconductor light source.

本発明に係る第一実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 1st embodiment which concerns on this invention. 本発明に係る第二実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 2nd embodiment which concerns on this invention. 本発明に係る第三実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 3rd embodiment which concerns on this invention. 本発明に係る第四実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 4th embodiment which concerns on this invention. 本発明に係る第五実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 5th embodiment which concerns on this invention. 本発明に係る第六実施形態の発光素子の断面図である。It is sectional drawing of the light emitting element of 6th embodiment which concerns on this invention.

以下、図面を参照して、本発明の実施形態について説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１を参照すると、本発明に係る第一実施形態の発光素子１０は、発光ダイオードであり、基板２０と、前記基板２０に固定される２つのピン３０と、前記２つのピン３０に電気接続される半導体光源４０と、前記半導体光源４０を被覆する封止体５０と、を備える。   Referring to FIG. 1, a light emitting device 10 according to a first embodiment of the present invention is a light emitting diode, and is electrically connected to a substrate 20, two pins 30 fixed to the substrate 20, and the two pins 30. A semiconductor light source 40 and a sealing body 50 that covers the semiconductor light source 40.

前記基板２０は、プラスチック（例えば、ガラスエポキシ樹脂、ガラスベンゼン樹脂など）、又はセラミック（酸化アルミニウム、酸化ジルコニウム、窒化ケイ素など）からなる。前記基板２０の材料に応じてその熱伝導率も変化し、約０.１〜約３０Ｗ/ｍＫである。前記基板２０には、その厚さの方向に沿って、前記基板２０を上下に貫通する複数の通路（図示せず）１が平均に設けられ、各々の通路内に、金、銀、銅、アルミニウムなどのような熱伝導性が優れる材料を充填することにより、熱伝導路２２が形成される。前記基板２０の熱伝導率がＫ１であると仮定し、熱伝導路２２に充填される熱伝導材料の熱伝導率がＫ２であると仮定すると、前記基板２０の１体積（１ｍｍ＊１ｍｍ＊１ｍｍ）の範囲における熱伝導率は、以下の式で表される。
Ｋ＝Ｋ１Ｖ１＋Ｋ２Ｖ２ The substrate 20 is made of plastic (for example, glass epoxy resin, glass benzene resin, etc.) or ceramic (aluminum oxide, zirconium oxide, silicon nitride, etc.). Depending on the material of the substrate 20, its thermal conductivity also varies and is about 0.1 to about 30 W / mK. The substrate 20 is provided with a plurality of passages (not shown) 1 penetrating up and down the substrate 20 along the thickness direction, and gold, silver, copper, The heat conduction path 22 is formed by filling a material having excellent heat conductivity such as aluminum. Assuming that the thermal conductivity of the substrate 20 is K1, and assuming that the thermal conductivity of the thermal conductive material filled in the thermal conduction path 22 is K2, 1 volume of the substrate 20 (1 mm * 1 mm * 1 mm). ) In the range is expressed by the following equation.
K = K 1 V 1 + K 2 V 2

その中で、Ｖ１は、１体積の範囲における基板２０の材料の体積パーセントであり、Ｖ２は、１体積の範囲における熱伝導材料の体積パーセントである。 Wherein V 1 is the volume percent of the material of the substrate 20 in the range of 1 volume, and V 2 is the volume percent of the thermally conductive material in the range of 1 volume.

前記基板２０の１体積の範囲において、ｎ個の熱伝導路があると仮定し、１つの熱伝導路の半径がＲであると仮定すると、前記式は以下に示したようになる。
Ｋ＝ｎπＲ２Ｋ２＋（１−ｎπＲ２）Ｋ１ Assuming that there are n heat conduction paths in one volume range of the substrate 20 and assuming that the radius of one heat conduction path is R, the above equation is as follows.
K = nπR 2 K 2 + (1-nπR 2 ) K 1

このように、前記基板２０の１体積の範囲における熱伝導率は、熱伝導路の数、孔径及び熱伝導材料の種類と関係がある。例えば、Ｋ１＝３Ｗ/ｍＫ、Ｋ２＝４２８Ｗ/ｍＫ（金を熱伝導材料として熱伝導路２２に充填する）、ｎ＝９、Ｒ＝０.１５ｍｍの場合、前記式により計算するとＫ＝２７３Ｗ/ｍＫである。熱伝導材料を充填した基板２０の熱伝導率は、熱伝導材料を充填しない基板の熱伝導率より高い。前記基板２０に熱伝導材料を充填することによって、前記基板２０の熱伝導率を効果的に高め、前記半導体光源４０の正常な動作を確保することができる。 Thus, the thermal conductivity in the range of 1 volume of the substrate 20 is related to the number of heat conduction paths, the hole diameter, and the type of the heat conduction material. For example, when K 1 = 3 W / mK, K 2 = 428 W / mK (gold is filled in the heat conduction path 22 as a heat conduction material), n = 9, and R = 0.15 mm, K = 273 W / mK. The thermal conductivity of the substrate 20 filled with the thermally conductive material is higher than the thermal conductivity of the substrate not filled with the thermally conductive material. By filling the substrate 20 with a heat conductive material, the thermal conductivity of the substrate 20 can be effectively increased, and normal operation of the semiconductor light source 40 can be ensured.

前記２つのピン３０は、前記基板２０に離間して配置される。各々のピン３０は、前記基板２０の頂面に固定される輸入段３２と、前記基板２０の側面から外に向かって突出する外接段３４と、前記輸入段３２と前記外接段３４との間に連接される連接段３６と、を備える。前記外接段３４は、外部の電源に接続され、電流を前記連接段３６により前記輸入段３２に流入させる。前記連接段３６は、前記基板２０の側面に貼合され、互いに平行する前記輸入段３２と前記外接段３４に直交する。前記輸入段３２は、前記半導体光源４０に電気接続され、電流を前記半導体光源４０に供給する。前記半導体光源４０は、前記基板２０の頂面に固定され、２つのピン３０の輸入段３２の間に配置される。本実施例において、前記半導体光源４０は、発光チップであり、窒化ガリウム、窒化インジウムガリウム、ガリウムヒ素などのような半導体発光材料からなる。前記半導体光源４０は２つのリード線６０により前記ピン３０の輸入段３２にそれぞれ接続され、外部の電源に電気接続される。   The two pins 30 are spaced apart from the substrate 20. Each pin 30 includes an importing step 32 fixed to the top surface of the substrate 20, a circumscribing step 34 projecting outward from the side surface of the substrate 20, and between the importing step 32 and the circumscribing step 34. And a connecting step 36 connected to the. The circumscribing stage 34 is connected to an external power source, and allows current to flow into the importing stage 32 through the connecting stage 36. The connecting step 36 is bonded to the side surface of the substrate 20 and is orthogonal to the importing step 32 and the circumscribed step 34 which are parallel to each other. The import stage 32 is electrically connected to the semiconductor light source 40 and supplies current to the semiconductor light source 40. The semiconductor light source 40 is fixed to the top surface of the substrate 20 and is disposed between the import stages 32 of the two pins 30. In this embodiment, the semiconductor light source 40 is a light emitting chip and is made of a semiconductor light emitting material such as gallium nitride, indium gallium nitride, gallium arsenide, or the like. The semiconductor light source 40 is connected to the import stage 32 of the pin 30 by two lead wires 60 and is electrically connected to an external power source.

前記封止体５０は、ガラス、エポキシ樹脂、ポリカーボネート、ポリメタクリル酸メチルなどのような透明材料からなり、前記半導体光源４０及びリード線６０を被覆し、前記半導体光源４０及びリード線６０を保護することができる。   The sealing body 50 is made of a transparent material such as glass, epoxy resin, polycarbonate, polymethyl methacrylate, etc., covers the semiconductor light source 40 and the lead wire 60, and protects the semiconductor light source 40 and the lead wire 60. be able to.

前記半導体光源４０に近い位置の熱量は、前記半導体光源４０から離れている位置の熱量より高いので、前記熱伝導路２２の寸法及び配列は適宜変更することもでき、熱伝導率を向上させる。図２に示したように、本発明に係る第二実施形態の発光素子１０は、前記半導体光源４０に近い熱伝導路２２の間の距離を減らし、前記半導体光源４０に近い熱伝導路２２の密度は、前記半導体光源４０から離れている熱伝導路２２の密度より大きい。又は、図３に示したように、本発明に係る第三実施形態の発光素子１０は、前記半導体光源４０に近い熱伝導路２２が太くなっている。すなわち、前記半導体光源４０に近い熱伝導路２２の直径が、前記半導体光源４０から離れている熱伝導路２２の直径より大きくなる。   Since the amount of heat at a position near the semiconductor light source 40 is higher than the amount of heat at a position away from the semiconductor light source 40, the size and arrangement of the heat conduction path 22 can be changed as appropriate to improve the heat conductivity. As shown in FIG. 2, the light emitting device 10 according to the second embodiment of the present invention reduces the distance between the heat conduction paths 22 near the semiconductor light source 40 and reduces the distance between the heat conduction paths 22 near the semiconductor light source 40. The density is larger than the density of the heat conduction path 22 away from the semiconductor light source 40. Alternatively, as shown in FIG. 3, in the light emitting device 10 according to the third embodiment of the present invention, the heat conduction path 22 close to the semiconductor light source 40 is thick. That is, the diameter of the heat conduction path 22 near the semiconductor light source 40 is larger than the diameter of the heat conduction path 22 away from the semiconductor light source 40.

金属材料を熱伝導材料とする時、前記熱伝導路２２は、前記基板２０を貫通し、且つ一部の熱伝導路２２は前記ピン３０に接続されるので、２つのピン３０は、外界の要因を受けて、前記熱伝導路２２により電気接続され、ショートを引き起こす可能がある。そのため、前記熱伝導路２２を、図４に示したような構造に変更することもできる。即ち、前記熱伝導路２２は、第一熱伝導路２２０と、第二熱伝導路２２２と、を備える。前記第一熱伝導路２２０は、前記基板２０の頂面から下に向かって延在して、且つ前記基板２０の底面を貫通しない。前記第二熱伝導路２２２は、前記第一熱伝導路２２０と交互に配列され、前記基板２０の底面から上に向かって延在して、且つ前記基板２０の頂面を貫通しない。前記第一熱伝導路２２０と前記第二熱伝導路２２２は、前記基板２０を貫通しないので、前記基板２０の底面に導電材料を塗布しても、２つのピン３０が前記熱伝導路２２により電気接続されショートを引き起こすことはない。   When the metal material is a heat conducting material, the heat conducting path 22 penetrates the substrate 20 and a part of the heat conducting paths 22 are connected to the pins 30. In response to the factor, the heat conduction path 22 may be electrically connected to cause a short circuit. Therefore, the heat conduction path 22 can be changed to a structure as shown in FIG. That is, the heat conduction path 22 includes a first heat conduction path 220 and a second heat conduction path 222. The first heat conduction path 220 extends downward from the top surface of the substrate 20 and does not penetrate the bottom surface of the substrate 20. The second heat conduction paths 222 are alternately arranged with the first heat conduction paths 220, extend upward from the bottom surface of the substrate 20, and do not penetrate the top surface of the substrate 20. Since the first heat conduction path 220 and the second heat conduction path 222 do not penetrate the substrate 20, even if a conductive material is applied to the bottom surface of the substrate 20, the two pins 30 are connected by the heat conduction path 22. It is electrically connected and does not cause a short circuit.

前記熱伝導路２２が導電性を有する場合、図５に示したように、本発明に係る第五実施形態の発光素子１０は、ピン３０を省略することが可能である。前記熱伝導路２２を導電路として、前記基板２０の頂面及び底面には、２つの電極２４がさらに設けられ、前記電極２４により前記半導体光源４０を外界に電気接続する。   When the heat conduction path 22 has conductivity, as shown in FIG. 5, the light emitting element 10 according to the fifth embodiment of the present invention can omit the pin 30. Two electrodes 24 are further provided on the top and bottom surfaces of the substrate 20 using the heat conduction path 22 as a conduction path, and the semiconductor light source 40 is electrically connected to the outside by the electrodes 24.

前記熱伝導路２２の構造は、発光ダイオードの封止基板に設けられることに限定されるものではなく、発光ダイオードの回路基板に応用されることもできる。図６を参照すると、本発明に係る第六実施形態の発光素子１０は、第一基板２０ａと、前記第一基板２０ａに設けられる第二基板２０ｂと、前記第二基板２０ｂに固定される半導体光源４０ｂと、ピン３０ｂとを備える。前記第一基板２０ａは、前記ピン３０ｂにより、前記半導体光源４０ｂに電気接続される回路基板であり、前記発光素子１０の第一実施例ないし第五実施例のいずれか１つにおける基板２０であることができる。本実施例において、前記第一基板２０ａには熱伝導路２２ａが設けられる。前記第二基板２０ｂは前記発光素子１０の第一実施例ないし第五実施例のいずれか１つにおける基板２０であってもよく、熱伝導路２２が設けられない基板であってもよく、且つ前記第二基板２０ｂの熱伝導路は前記第一基板２０ａの熱伝導路２２ａに接続されず、２つのピン３０ｂをショートさせることを回避することができる。   The structure of the heat conduction path 22 is not limited to being provided on the sealing substrate of the light emitting diode, but may be applied to a circuit substrate of the light emitting diode. Referring to FIG. 6, the light emitting device 10 according to the sixth embodiment of the present invention includes a first substrate 20a, a second substrate 20b provided on the first substrate 20a, and a semiconductor fixed to the second substrate 20b. The light source 40b and the pin 30b are provided. The first substrate 20a is a circuit substrate that is electrically connected to the semiconductor light source 40b by the pins 30b, and is the substrate 20 in any one of the first to fifth embodiments of the light emitting element 10. be able to. In the present embodiment, the first substrate 20a is provided with a heat conduction path 22a. The second substrate 20b may be the substrate 20 in any one of the first embodiment to the fifth embodiment of the light emitting device 10, may be a substrate in which the heat conduction path 22 is not provided, and The heat conduction path of the second substrate 20b is not connected to the heat conduction path 22a of the first substrate 20a, and it is possible to avoid shorting the two pins 30b.

以上、本発明の好適な実施例について詳細に説明したが、本発明は前記実施例に限定されるものではなく、本発明の範囲内で種々の変形又は修正が可能であり、該変形又は修正も又、本発明の特許請求の範囲内に含まれるものであることは、いうまでもない。   The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments, and various modifications or corrections are possible within the scope of the present invention. Needless to say, it is also included in the scope of the claims of the present invention.

１０ 発光素子
２０ 基板
２０ａ 第一基板
２０ｂ 第二基板
２２、２２ａ 熱伝導路
２４ 電極
３０、３０ｂ ピン
４０、４０ｂ 半導体光源
２２０ 第一熱伝導路
２２２ 第二熱伝導路
３２ 輸入段
３４ 外接段
３６ 連接段
５０ 封止体
６０ リード線 DESCRIPTION OF SYMBOLS 10 Light emitting element 20 Board | substrate 20a 1st board | substrate 20b 2nd board | substrate 22, 22a Thermal conduction path 24 Electrode 30, 30b Pin 40, 40b Semiconductor light source 220 First thermal conduction path 222 Second thermal conduction path 32 Import stage 34 Outer stage 36 Connection Stage 50 Encapsulant 60 Lead wire

Claims (9)

半導体光源と、前記半導体光源を保持する基板と、を備えてなる発光素子であって、
前記基板内には熱伝導路が形成され、前記熱伝導路の熱伝導率は前記基板の熱伝導率より高いことを特徴とする発光素子。 A light-emitting element comprising a semiconductor light source and a substrate for holding the semiconductor light source,
A light emitting device, wherein a heat conduction path is formed in the substrate, and the heat conductivity of the heat conduction path is higher than the heat conductivity of the substrate. 前記熱伝導路の数量は、複数であり、前記熱伝導路は、前記基板の厚さの方向に沿って、延在されることを特徴とする請求項１に記載の発光素子。   2. The light emitting device according to claim 1, wherein the number of the heat conduction paths is a plurality, and the heat conduction paths extend along a thickness direction of the substrate. 前記熱伝導路は、前記基板を上下に貫通することを特徴とする請求項２に記載の発光素子。   The light emitting device according to claim 2, wherein the heat conduction path penetrates the substrate vertically. 前記半導体光源に近い熱伝導路の密度は、前記半導体光源から離れた熱伝導路の密度より大きいことを特徴とする請求項２又は請求項３に記載の発光素子。   4. The light emitting device according to claim 2, wherein a density of a heat conduction path close to the semiconductor light source is higher than a density of a heat conduction path away from the semiconductor light source. 前記半導体光源に近い熱伝導路の直径は、前記半導体光源から離れた熱伝導路の直径より大きいことを特徴とする請求項２〜４のいずれか一項に記載の発光素子。   The light emitting device according to any one of claims 2 to 4, wherein a diameter of the heat conduction path close to the semiconductor light source is larger than a diameter of the heat conduction path away from the semiconductor light source. 前記熱伝導路が電極に電気接続されることによって、導電路が形成されることを特徴とする請求項３〜５のいずれか一項に記載の発光素子。   The light emitting device according to any one of claims 3 to 5, wherein a conductive path is formed by electrically connecting the heat conduction path to an electrode. 前記発光素子は、前記半導体光源に接続されるピンをさらに備えることを特徴とする請求項１〜６のいずれか一項に記載の発光素子。   The light emitting device according to claim 1, further comprising a pin connected to the semiconductor light source. 前記半導体光源は、発光ダイオードであり、前記基板は、回路基板であることを特徴とする請求項１〜７のいずれか一項に記載の発光素子。   The light emitting element according to claim 1, wherein the semiconductor light source is a light emitting diode, and the substrate is a circuit board. 前記熱伝導路が、第一熱伝導路と、前記第一熱伝導路と交互に配列される第二熱伝導路と、を備え、前記第一熱伝導路は、前記基板の頂面から下に向かって延在して、且つ前記基板の底面を貫通せず、前記第二熱伝導路は、前記基板の底面から上に向かって延在して、且つ前記基板の頂面を貫通しないことを特徴とする請求項２に記載の発光素子。   The thermal conduction path includes a first thermal conduction path and a second thermal conduction path arranged alternately with the first thermal conduction path, and the first thermal conduction path extends from a top surface of the substrate. And the second thermal conduction path extends upward from the bottom surface of the substrate and does not penetrate the top surface of the substrate. The light emitting device according to claim 2.
JP2011234777A 2010-10-29 2011-10-26 Light-emitting device Pending JP2012099814A (en)

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JP2014027121A (en) * 2012-07-27 2014-02-06 Mitsubishi Electric Corp Power semiconductor device
JP2014192371A (en) * 2013-03-27 2014-10-06 Toyoda Gosei Co Ltd Light-emitting device and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
TWI550920B (en) * 2012-12-13 2016-09-21 鴻海精密工業股份有限公司 Light-emitting diode
CN103872029A (en) * 2012-12-14 2014-06-18 鸿富锦精密工业（深圳）有限公司 Light emitting diode module
CN108389885B (en) * 2018-04-13 2021-05-18 业成科技（成都）有限公司 Heat dissipation structure, electronic device using same and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027121A (en) * 2012-07-27 2014-02-06 Mitsubishi Electric Corp Power semiconductor device
JP2014192371A (en) * 2013-03-27 2014-10-06 Toyoda Gosei Co Ltd Light-emitting device and method for manufacturing the same

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