JP2012233876A5 - - Google Patents

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Publication number
JP2012233876A5
JP2012233876A5 JP2012040395A JP2012040395A JP2012233876A5 JP 2012233876 A5 JP2012233876 A5 JP 2012233876A5 JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012233876 A5 JP2012233876 A5 JP 2012233876A5
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JP
Japan
Prior art keywords
die
cap
fet
frit material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012040395A
Other languages
English (en)
Japanese (ja)
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JP2012233876A (ja
Filing date
Publication date
Priority claimed from US13/096,710 external-priority patent/US8536626B2/en
Application filed filed Critical
Publication of JP2012233876A publication Critical patent/JP2012233876A/ja
Publication of JP2012233876A5 publication Critical patent/JP2012233876A5/ja
Pending legal-status Critical Current

Links

JP2012040395A 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ Pending JP2012233876A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/096,710 US8536626B2 (en) 2011-04-28 2011-04-28 Electronic pH sensor die packaging
US13/096,710 2011-04-28

Publications (2)

Publication Number Publication Date
JP2012233876A JP2012233876A (ja) 2012-11-29
JP2012233876A5 true JP2012233876A5 (enExample) 2015-04-16

Family

ID=45930550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012040395A Pending JP2012233876A (ja) 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ

Country Status (3)

Country Link
US (1) US8536626B2 (enExample)
EP (1) EP2518483B1 (enExample)
JP (1) JP2012233876A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524957B2 (en) * 2011-08-17 2016-12-20 Intersil Americas LLC Back-to-back stacked dies
US8828207B2 (en) * 2012-06-13 2014-09-09 Honeywell International Inc. Deep sea pH sensor
US8701496B1 (en) * 2013-02-27 2014-04-22 Honeywell International Inc. Systems and methods for a pressure sensor having a two layer die structure
US10151647B2 (en) 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
US9664641B2 (en) 2013-07-29 2017-05-30 Honeywell International Inc. pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
US9671362B2 (en) * 2013-07-29 2017-06-06 Honeywell International Inc. ph sensor with bonding agent disposed in a pattern
CN105960592B (zh) * 2013-09-18 2020-01-10 苏普拉传感器技术有限责任公司 基于分子受体的化学场效应晶体管
US9759679B2 (en) * 2014-02-07 2017-09-12 Honeywell International Inc. Fluid sensor with backside of sensor die contacting header
US9442090B2 (en) * 2014-03-27 2016-09-13 Honeywell International Inc. Magnetic stimulus of ISFET-based sensor to enable trimming and self-compensation of sensor measurement errors
US9140662B1 (en) * 2014-08-19 2015-09-22 Honeywell International Inc. Preventing stray currents in sensors in conductive media
US9470652B1 (en) 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture
US9899290B2 (en) 2016-03-23 2018-02-20 Nxp Usa, Inc. Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant
CN106248761A (zh) * 2016-08-01 2016-12-21 严媚 一种高灵敏度酸碱值生物传感器芯片
TWI642171B (zh) * 2017-11-09 2018-11-21 友達光電股份有限公司 感測裝置
WO2019226831A1 (en) * 2018-05-22 2019-11-28 Gate Scientific, Inc. Wirelessly sensing properties of a closed environment and devices thereof
JP7269559B2 (ja) * 2018-07-12 2023-05-09 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
WO2020050183A1 (ja) * 2018-09-04 2020-03-12 学校法人早稲田大学 水中通信装置及び水中通信方法
CN114651173B (zh) * 2019-11-06 2024-10-11 联邦科学及工业研究组织 用于感测pH的多层电极

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