JP2012227227A - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP2012227227A JP2012227227A JP2011091332A JP2011091332A JP2012227227A JP 2012227227 A JP2012227227 A JP 2012227227A JP 2011091332 A JP2011091332 A JP 2011091332A JP 2011091332 A JP2011091332 A JP 2011091332A JP 2012227227 A JP2012227227 A JP 2012227227A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- thickness
- quantum level
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 230000004888 barrier function Effects 0.000 claims abstract description 208
- 239000000758 substrate Substances 0.000 claims abstract description 24
- -1 nitride compound Chemical class 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 abstract description 9
- 150000004767 nitrides Chemical class 0.000 abstract description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 230000005533 two-dimensional electron gas Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000010030 laminating Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】基板と、基板上に設けられ第1の窒化物系化合物半導体からなるチャネル層と、チャネル層上に設けられたバリア層と、バリア層上に設けられた第1電極と、チャネル層の上方に設けられた第2電極とを備え、バリア層は、チャネル層上に設けられ第1の窒化物系化合物半導体よりバンドギャップエネルギーが大きい第2の窒化物系化合物半導体からなる障壁層と、第2の窒化物系化合物半導体よりバンドギャップエネルギーが小さい第3の窒化物系化合物半導体からなり量子準位が形成された量子準位層とを有する半導体デバイスを提供する。
【選択図】図1
Description
特許文献1 特開2005―354101号公報
Claims (18)
- 基板と、
前記基板の上方に設けられ、第1の窒化物系化合物半導体からなるチャネル層と、
前記チャネル層上に設けられたバリア層と、
前記バリア層上に設けられた第1電極と、
前記チャネル層の上方に設けられた第2電極と、を備え
前記バリア層は、
前記チャネル層上に設けられ、前記第1の窒化物系化合物半導体よりバンドギャップエネルギーが大きい第2の窒化物系化合物半導体からなる障壁層と、
前記障壁層上に設けられ、前記第2の窒化物系化合物半導体よりバンドギャップエネルギーが小さい第3の窒化物系化合物半導体からなり、量子準位が形成された、量子準位層と、が繰り返し積層されている
半導体デバイス。 - 前記第2の窒化物系化合物半導体はAlNであり、
前記第3の窒化物系化合物半導体はGaNである請求項1に記載の半導体デバイス。 - 前記バリア層の厚さが15nm以上、40nm以下であり、
前記障壁層の各層の厚さが0.25nm以上、1.5nm以下である請求項1または2に記載の半導体デバイス。 - 前記バリア層が有する障壁層の厚さの合計が、前記バリア層の厚さに対して15%以上である請求項1から3のいずれか一項に記載の半導体デバイス。
- 前記バリア層が有する前記障壁層のうち、前記チャネル層に最も近い前記障壁層の厚さが0.5nm以上、1.5nm以下である請求項1から4のいずれか一項に記載の半導体デバイス。
- 前記バリア層が有する前記障壁層のうち、前記チャネル層に最も近い前記障壁層の厚さが、他の前記障壁層の厚さと異なる請求項1から5のいずれか一項に記載の半導体デバイス。
- 前記バリア層が有する前記量子準位層のうち、前記チャネル層から最も離れて形成された前記量子準位層の厚さが0.5nm以上、10nm以下である請求項1から6のいずれか一項に記載の半導体デバイス。
- 前記バリア層が有する前記量子準位層のうち、前記チャネル層から最も離れて形成された前記量子準位層の厚さが、他の前記量子準位層の厚さと異なる請求項1から7のいずれか一項に記載の半導体デバイス。
- 前記量子準位層のいずれか一層の厚さが、前記チャネル層に近い他の前記量子準位層のいずれか一層の厚さより厚い請求項1から8のいずれか一項に記載の半導体デバイス。
- 前記量子準位層の一層の厚さが、前記チャネル層に近い他の前記量子準位層の一層の厚さ以上である請求項1から9のいずれか一項に記載の半導体デバイス。
- 前記量子準位層が、各層の厚さが同一である複数の前記量子準位層を含む複数のグループに分かれ、
前記複数のグループの一つに含まれる前記量子準位層の各層の厚さが、前記複数のグループの他の一つに含まれ、前記チャネル層に近い他の前記量子準位層の厚さより厚い請求項1から10のいずれか一項に記載の半導体デバイス。 - 前記量子準位層の各層の厚さが、前記チャネル層に近いほど薄い請求項1から8のいずれか一項に記載の半導体デバイス。
- 前記障壁層のいずれか一層の厚さが、前記チャネル層に近い他の前記障壁層のいずれか一層の厚さより薄い請求項1から12のいずれか一項に記載の半導体デバイス。
- 前記障壁層の一層の厚さが、前記チャネル層に近い他の前記障壁層の一層の厚さ以下である請求項1から13のいずれか一項に記載の半導体デバイス。
- 前記第1電極が前記チャネル層にオーミック接続し、
前記第2電極が前記チャネル層にショットキー接続する、
請求項1から14のいずれか一項に記載の半導体デバイス。 - 前記バリア層上に設けられ、前記チャネル層にオーミック接続した第3電極をさらに備える請求項15に記載の半導体デバイス。
- 前記第2電極が前記障壁層の表面に接して設けられた請求項15または16に記載の半導体デバイス。
- 前記第2電極が前記チャネル層に接して設けられた請求項15または16に記載の半導体デバイス。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011091332A JP2012227227A (ja) | 2011-04-15 | 2011-04-15 | 半導体デバイス |
CN2012800078537A CN103348479A (zh) | 2011-04-15 | 2012-04-13 | 半导体器件 |
KR1020137018278A KR20140042770A (ko) | 2011-04-15 | 2012-04-13 | 반도체 디바이스 |
EP12770971.5A EP2698823A4 (en) | 2011-04-15 | 2012-04-13 | SEMICONDUCTOR DEVICE |
PCT/JP2012/002597 WO2012140915A1 (ja) | 2011-04-15 | 2012-04-13 | 半導体デバイス |
US13/952,640 US20140008615A1 (en) | 2011-04-15 | 2013-07-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011091332A JP2012227227A (ja) | 2011-04-15 | 2011-04-15 | 半導体デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012227227A true JP2012227227A (ja) | 2012-11-15 |
Family
ID=47009104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011091332A Pending JP2012227227A (ja) | 2011-04-15 | 2011-04-15 | 半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140008615A1 (ja) |
EP (1) | EP2698823A4 (ja) |
JP (1) | JP2012227227A (ja) |
KR (1) | KR20140042770A (ja) |
CN (1) | CN103348479A (ja) |
WO (1) | WO2012140915A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015115366A (ja) * | 2013-12-09 | 2015-06-22 | 古河電気工業株式会社 | 窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2800139A1 (en) * | 2013-04-30 | 2014-11-05 | Azzurro Semiconductors AG | Layer sequence for an electronic device |
CN111477536A (zh) * | 2020-03-31 | 2020-07-31 | 华为技术有限公司 | 一种半导体外延结构及半导体器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172164A (ja) * | 1995-12-19 | 1997-06-30 | Nec Corp | 電界効果トランジスタ |
JP2001274375A (ja) * | 2000-03-28 | 2001-10-05 | Nec Corp | ヘテロ接合電界効果トランジスタ |
JP2005302861A (ja) * | 2004-04-08 | 2005-10-27 | Matsushita Electric Ind Co Ltd | Iii−v族窒化物半導体を用いた半導体装置 |
JP2006279032A (ja) * | 2005-03-02 | 2006-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008198783A (ja) * | 2007-02-13 | 2008-08-28 | Sharp Corp | 電界効果トランジスタ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3094500B2 (ja) * | 1991-05-21 | 2000-10-03 | 日本電気株式会社 | 電界効果トランジスタ |
US20050006639A1 (en) * | 2003-05-23 | 2005-01-13 | Dupuis Russell D. | Semiconductor electronic devices and methods |
FR2875338B1 (fr) * | 2004-09-13 | 2007-01-05 | Picogiga Internat Soc Par Acti | Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul |
FR2875337A1 (fr) * | 2004-09-13 | 2006-03-17 | Picogiga Internat Soc Par Acti | Structures hemt piezoelectriques a desordre d'alliage nul |
JP4517077B2 (ja) | 2005-08-01 | 2010-08-04 | 独立行政法人産業技術総合研究所 | 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ |
US8384129B2 (en) * | 2009-06-25 | 2013-02-26 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
-
2011
- 2011-04-15 JP JP2011091332A patent/JP2012227227A/ja active Pending
-
2012
- 2012-04-13 KR KR1020137018278A patent/KR20140042770A/ko not_active Application Discontinuation
- 2012-04-13 CN CN2012800078537A patent/CN103348479A/zh active Pending
- 2012-04-13 EP EP12770971.5A patent/EP2698823A4/en not_active Withdrawn
- 2012-04-13 WO PCT/JP2012/002597 patent/WO2012140915A1/ja active Application Filing
-
2013
- 2013-07-28 US US13/952,640 patent/US20140008615A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172164A (ja) * | 1995-12-19 | 1997-06-30 | Nec Corp | 電界効果トランジスタ |
JP2001274375A (ja) * | 2000-03-28 | 2001-10-05 | Nec Corp | ヘテロ接合電界効果トランジスタ |
JP2005302861A (ja) * | 2004-04-08 | 2005-10-27 | Matsushita Electric Ind Co Ltd | Iii−v族窒化物半導体を用いた半導体装置 |
JP2006279032A (ja) * | 2005-03-02 | 2006-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008198783A (ja) * | 2007-02-13 | 2008-08-28 | Sharp Corp | 電界効果トランジスタ |
Non-Patent Citations (1)
Title |
---|
A.R.BONNEFOI ET AL: "Resonant Tunneling Transistors with Controllable Negative Differential Resistances", IEEE ELECTRON DEVICE LETTERS, vol. 6, no. 12, JPN6013061410, December 1985 (1985-12-01), pages 636 - 638, ISSN: 0002702798 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015115366A (ja) * | 2013-12-09 | 2015-06-22 | 古河電気工業株式会社 | 窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
EP2698823A4 (en) | 2014-10-01 |
EP2698823A1 (en) | 2014-02-19 |
US20140008615A1 (en) | 2014-01-09 |
CN103348479A (zh) | 2013-10-09 |
KR20140042770A (ko) | 2014-04-07 |
WO2012140915A1 (ja) | 2012-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9548376B2 (en) | Method of manufacturing a semiconductor device including a barrier structure | |
JP6174874B2 (ja) | 半導体装置 | |
EP1779438B1 (en) | Iii-v hemt devices | |
JP5564842B2 (ja) | 半導体装置 | |
US8866192B1 (en) | Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing | |
CN107408511B (zh) | 化合物半导体基板 | |
US9401403B2 (en) | Nitride semiconductor structure | |
US9478632B2 (en) | Method of manufacturing a semiconductor device | |
JP5787417B2 (ja) | 窒化物半導体基板 | |
EP2290675B1 (en) | Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device | |
EP2211376A1 (en) | Iii nitride electronic device and iii nitride semiconductor epitaxial substrate | |
JP6035721B2 (ja) | 半導体装置の製造方法 | |
US8853735B2 (en) | Epitaxial substrate for semiconductor device and semiconductor device | |
EP2290696B1 (en) | Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device | |
JP5919703B2 (ja) | 半導体装置 | |
JP2005085852A (ja) | 半導体電子デバイス | |
JP2011166067A (ja) | 窒化物半導体装置 | |
JP2009032713A (ja) | GaNをチャネル層とする窒化物半導体トランジスタ及びその作製方法 | |
JP2011049488A (ja) | Iii族窒化物半導体積層ウェハ及びiii族窒化物半導体デバイス | |
US20140327012A1 (en) | Hemt transistors consisting of (iii-b)-n wide bandgap semiconductors comprising boron | |
JP2011040676A (ja) | 半導体装置及びその製造方法 | |
JP2011049271A (ja) | 半導体装置 | |
EP2296172B1 (en) | Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure | |
US20120168771A1 (en) | Semiconductor element, hemt element, and method of manufacturing semiconductor element | |
WO2012140915A1 (ja) | 半導体デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140214 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20140218 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20140423 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140715 |