JP2012209415A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000010438 heat treatment Methods 0.000 claims abstract description 95
- 150000002500 ions Chemical class 0.000 claims abstract description 82
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 230000004913 activation Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 60
- 238000005468 ion implantation Methods 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 17
- 230000003213 activating effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 109
- 229910010271 silicon carbide Inorganic materials 0.000 description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 51
- 230000008569 process Effects 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 238000001994 activation Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 238000000859 sublimation Methods 0.000 description 10
- 230000008022 sublimation Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 229910003468 tantalcarbide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】半導体素子の製造方法は、イオン注入工程と、カーボン層形成工程と、イオン活性化工程と、除去工程と、を含む。イオン注入工程では、基板にイオンを注入する。カーボン層形成工程では、イオン注入工程でイオンが注入された基板の表面にカーボン層を形成する。イオン活性化工程では、カーボン層が形成された基板を加熱してイオンを活性化させる。除去工程では、イオン活性化工程が行われた基板をSi蒸気圧下で加熱することで、カーボン層と、イオン活性化工程で基板表面に発生するステップバンチングと、を除去する。
【選択図】図10
Description
70 基板
71 エピタキシャル層
72 イオン注入部分
73 カーボン層
Claims (7)
- 少なくとも表面がSiC層で構成されるとともにオフ角を有する基板を用いた半導体素子の製造方法において、
前記基板にイオンを注入するイオン注入工程と、
前記イオン注入工程でイオンが注入された基板の表面にカーボン層を形成するカーボン層形成工程と、
前記カーボン層が形成された基板を加熱してイオンを活性化させるイオン活性化工程と、
前記イオン活性化工程が行われた前記基板をSi蒸気圧下で加熱することで、前記カーボン層と、前記イオン活性化工程で基板表面に発生するステップバンチングと、を除去する除去工程と、
を含むことを特徴とする半導体素子の製造方法。 - 請求項1に記載の半導体素子の製造方法であって、
前記イオン注入工程の前に、前記基板の前記SiC層の表面に単結晶SiCのエピタキシャル層を形成するエピタキシャル層形成工程を含み、
前記イオン注入工程では、前記基板の表面に形成されたエピタキシャル層にイオンを注入することを特徴とする半導体素子の製造方法。 - 請求項1又は2に記載の半導体素子の製造方法であって、
前記イオン注入工程でイオンが注入された前記基板を温度範囲が1500℃以上2300℃以下のSi蒸気圧下で加熱して分子レベルで平坦化する平坦化工程を含むことを特徴とする半導体素子の製造方法。 - 請求項3に記載の半導体素子の製造方法であって、
前記平坦化工程及び前記除去工程では、温度範囲が1500℃以上2300℃以下であって、Siの圧力が10-5Torr以上で加熱することを特徴とする半導体素子の製造方法。 - 請求項1から4までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面は、<11−20>方向のオフ角が8度以下の面であることを特徴とする半導体素子の製造方法。 - 請求項1から5までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面は、<1−100>方向のオフ角が8度以下の面であることを特徴とする半導体素子の製造方法。 - 請求項1から6までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面が、SiC分子の積層方向の1周期分であるフルユニットの高さ又は半周期分であるハーフユニットの高さからなるステップで終端していることを特徴とする半導体素子の製造方法。
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WO2016079980A1 (ja) * | 2014-11-18 | 2016-05-26 | 東洋炭素株式会社 | SiC基板処理方法 |
JPWO2015064256A1 (ja) * | 2013-10-28 | 2017-03-09 | 富士電機株式会社 | 炭化シリコン半導体装置及びその製造方法 |
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CN104797747A (zh) * | 2012-11-16 | 2015-07-22 | 东洋炭素株式会社 | 单晶碳化硅基板的表面处理方法和单晶碳化硅基板 |
CN104797747B (zh) * | 2012-11-16 | 2017-12-05 | 东洋炭素株式会社 | 单晶碳化硅基板的表面处理方法和单晶碳化硅基板 |
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CN107002288A (zh) * | 2014-11-18 | 2017-08-01 | 学校法人关西学院 | 碳化硅基板的表面处理方法 |
KR20170086561A (ko) * | 2014-11-18 | 2017-07-26 | 토요 탄소 가부시키가이샤 | SiC 기판 처리 방법 |
JPWO2016079980A1 (ja) * | 2014-11-18 | 2017-09-28 | 東洋炭素株式会社 | SiC基板処理方法 |
WO2016079980A1 (ja) * | 2014-11-18 | 2016-05-26 | 東洋炭素株式会社 | SiC基板処理方法 |
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US10665465B2 (en) | 2014-11-18 | 2020-05-26 | Kwansei Gakuin Educational Foundation | Surface treatment method for SiC substrate |
CN107002288B (zh) * | 2014-11-18 | 2020-10-16 | 学校法人关西学院 | 碳化硅基板的表面处理方法 |
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