JPWO2016079980A1 - SiC基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 238000003672 processing method Methods 0.000 title claims abstract description 25
- 150000002500 ions Chemical class 0.000 claims abstract description 68
- 238000010438 heat treatment Methods 0.000 claims abstract description 54
- 238000001994 activation Methods 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 33
- 238000005468 ion implantation Methods 0.000 claims description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- 239000011261 inert gas Substances 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 18
- 230000004913 activation Effects 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000004528 spin coating Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007666 vacuum forming Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
Description
(1) SiC(s) → Si(v)I + C(s)I
(2) 2SiC(s) → Si(v)II + SiC2(v)
(3) TaxSiy(s) → TaxSiy-1(s)+ Si(v)III
(4) SiC(s) + Si(v)I+II+III → Si2C(v)
(5) C(s)I + 2Si(v)I+II+III → Si2C(v)
10 高温真空炉
40 SiC基板
41 溝
45 エピタキシャル層
46 イオン注入領域
Claims (7)
- イオンが注入されたイオン注入領域を表面に有し、少なくとも当該イオン注入領域を含む部分に溝が形成されたSiC基板をSi蒸気圧下で加熱するイオン活性化処理を行うことで、前記SiC基板の表面をエッチングしつつ前記SiC基板に注入されたイオンを活性化させることを特徴とするSiC基板処理方法。
- 請求項1に記載のSiC基板処理方法であって、
前記SiC基板に形成された溝は、当該SiC基板を分離するための溝であることを特徴とするSiC基板処理方法。 - 請求項1に記載のSiC基板処理方法であって、
単結晶SiCのエピタキシャル層を表面に有し、少なくとも当該エピタキシャル層に溝が形成されたSiC基板に対してイオンを注入するイオン注入処理を前記イオン活性化処理の前に行うことを特徴とするSiC基板処理方法。 - 請求項1に記載のSiC基板処理方法であって、
前記イオン活性化処理は、Si及び不活性ガス雰囲気下で行われ、圧力が10Pa以上100kPa以下であることを特徴とするSiC基板処理方法。 - 請求項1に記載のSiC基板処理方法であって、
前記イオン活性化処理は、10-7Pa以上10-2Pa以下で行われることを特徴とするSiC基板処理方法。 - 請求項1に記載のSiC基板処理方法であって、
前記イオン活性化処理は、Si及び不活性ガス雰囲気下で行われ、圧力が10-2Pa以上10Pa以下であることを特徴とするSiC基板処理方法。 - 請求項1に記載のSiC基板処理方法であって、
前記イオン活性化処理は、前記SiC基板を加熱処理容器の内部空間に位置させた状態で行われ、
前記加熱処理容器は、タンタル金属を含み、当該タンタル金属よりも前記内部空間側に炭化タンタル層が設けられ、当該炭化タンタル層の更に内部空間側にタンタルシリサイド層が設けられることを特徴とするSiC基板処理方法。
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JP2014233233 | 2014-11-18 | ||
JP2014233233 | 2014-11-18 | ||
PCT/JP2015/005739 WO2016079980A1 (ja) | 2014-11-18 | 2015-11-17 | SiC基板処理方法 |
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WO2016079983A1 (ja) * | 2014-11-18 | 2016-05-26 | 東洋炭素株式会社 | SiC基板のエッチング方法及び収容容器 |
EP3766095A4 (en) * | 2018-05-04 | 2021-12-15 | The Government of the United States of America, as represented by the Secretary of the Navy | ACTIVATION OF IMPLANT DOPANT FOR BROADBAND SEMICONDUCTOR ELECTRONICS WITH FORBIDDEN ENERGY |
JP7389239B2 (ja) * | 2019-09-10 | 2023-11-29 | コリア エレクトロテクノロジー リサーチ インスティテュート | トレンチゲート型SiCMOSFETデバイス及びその製造方法 |
CN112408394B (zh) * | 2020-11-23 | 2023-07-07 | 武汉科技大学 | 一种二硅化钽纳米粉末的制备方法 |
WO2023189056A1 (ja) * | 2022-03-31 | 2023-10-05 | ローム株式会社 | 炉心管、熱処理装置および支持ユニット |
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KR102549160B1 (ko) | 2023-06-30 |
JP6310571B2 (ja) | 2018-04-11 |
CN107004585A (zh) | 2017-08-01 |
KR20170086561A (ko) | 2017-07-26 |
TWI677603B (zh) | 2019-11-21 |
US10014176B2 (en) | 2018-07-03 |
US20170323792A1 (en) | 2017-11-09 |
TW201627543A (zh) | 2016-08-01 |
WO2016079980A1 (ja) | 2016-05-26 |
EP3223302A1 (en) | 2017-09-27 |
EP3223302B1 (en) | 2021-01-06 |
CN107004585B (zh) | 2020-02-11 |
EP3223302A4 (en) | 2018-07-25 |
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