JP2012201437A - Base board carrying device and base board carrying method - Google Patents

Base board carrying device and base board carrying method Download PDF

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JP2012201437A
JP2012201437A JP2011065748A JP2011065748A JP2012201437A JP 2012201437 A JP2012201437 A JP 2012201437A JP 2011065748 A JP2011065748 A JP 2011065748A JP 2011065748 A JP2011065748 A JP 2011065748A JP 2012201437 A JP2012201437 A JP 2012201437A
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substrate
gas
stage
lower stage
gas injection
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Fumihiko Ikeda
文彦 池田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020120029973A priority patent/KR20120109395A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/064—Transporting devices for sheet glass in a horizontal position
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/066—Transporting devices for sheet glass being suspended; Suspending devices, e.g. clamps, supporting tongs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G51/00—Conveying articles through pipes or tubes by fluid flow or pressure; Conveying articles over a flat surface, e.g. the base of a trough, by jets located in the surface
    • B65G51/02—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases
    • B65G51/03—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases over a flat surface or in troughs
    • B65G51/035—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases over a flat surface or in troughs for suspended articles, e.g. bottles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To carry a base board while maintaining flatness of a base board surface, regardless of the base board area or a thickness dimension of a base board.SOLUTION: This base board carrying device includes a lower stage 2A for forming a plurality of gas injection holes 2a and a plurality of gas suction holes 2b on an upper surface, an upper stage 2B oppositely arranged to the lower stage above the lower stage and forming a plurality of gas injection holes 2a and gas suction holes 2b on an under surface, a base board carrying passage 2C formed in a space sandwiched by the lower stage and the upper stage, and a base board carrying means 10 for carrying the base board in the base board carrying direction by holding both ends in the width direction of the base board G in the base board carrying passage. The mutual gas injection holes respectively formed in the lower stage and the upper stage are opposed to each other, and the mutual gas suction holes are opposed to each other.

Description

本発明は、被処理基板を浮上させた状態で平流し搬送する基板搬送装置及び基板搬送方法に関する。   The present invention relates to a substrate transport apparatus and a substrate transport method for transporting a substrate to be processed while being floated.

例えば、ＦＰＤ（フラットパネルディスプレイ）の製造においては、いわゆるフォトリソグラフィ工程により回路パターンを形成することが行われている。
具体的には、ガラス基板等の被処理基板に所定の膜を成膜した後、処理液であるフォトレジスト（以下、レジストと呼ぶ）を塗布してレジスト膜を形成し、回路パターンに対応してレジスト膜を露光し、これを現像処理するものである。 For example, in manufacturing an FPD (flat panel display), a circuit pattern is formed by a so-called photolithography process.
Specifically, after a predetermined film is formed on a substrate to be processed such as a glass substrate, a photoresist (hereinafter referred to as a resist) as a processing liquid is applied to form a resist film, which corresponds to the circuit pattern. The resist film is exposed to light and developed.

ところで近年、このフォトリソグラフィ工程では、スループット向上の目的により、被処理基板を略水平姿勢の状態で搬送しながら、その被処理面に対しレジストの塗布、乾燥、加熱、冷却処理等の各処理を施す構成が多く採用されている。
前記基板搬送の構成としては、基板支持部材のレジスト塗布面への転写を防止するため、基板を略水平姿勢の状態で所定の高さに浮上させ、基板搬送方向に搬送する浮上搬送が注目されている。 By the way, in recent years, in this photolithography process, for the purpose of improving throughput, each process such as resist coating, drying, heating, and cooling is performed on the surface to be processed while the substrate to be processed is conveyed in a substantially horizontal posture. Many configurations are used.
As a configuration of the substrate transport, a floating transport in which the substrate is levitated to a predetermined height in a substantially horizontal posture and transported in the substrate transport direction in order to prevent transfer of the substrate support member to the resist coating surface is attracting attention. ing.

この浮上搬送を用いた基板搬送装置について図７に基づいて説明する。
図７の基板搬送装置２００は、被処理基板であるＬＣＤ基板（液晶ディスプレイ基板）Ｇを浮上搬送するための浮上ステージ２０１と、浮上ステージ２０１の左右両側に敷設された一対のレール２０２と、基板Ｇの左右両側を保持する基板保持部２０３と、基板保持部２０３を支持すると共にレール２０２上をスライド移動するスライダ２０４とを備えている。 A substrate transfer apparatus using this floating transfer will be described with reference to FIG.
7 includes a floating stage 201 for levitating and conveying an LCD substrate (liquid crystal display substrate) G, which is a substrate to be processed, a pair of rails 202 laid on the left and right sides of the floating stage 201, and a substrate. A substrate holding unit 203 that holds both the left and right sides of G, and a slider 204 that supports the substrate holding unit 203 and slides on the rail 202 are provided.

浮上ステージ２０１の上面には、上方（Ｚ方向）に向かって不活性ガスを噴射するための多数のガス噴射孔２０１ａと、吸気を行うための多数の吸引孔２０１ｂとが夫々、Ｘ方向とＹ方向に一定間隔で交互に設けられている。そして、ガス噴射孔２０１ａから噴射されるガス噴射量と吸引孔２０１ｂからの吸気量との圧力負荷を一定とすることによって、基板Ｇを浮上ステージ２０１の表面から一定の高さに浮上させるように構成されている。   On the upper surface of the levitation stage 201, there are a large number of gas injection holes 201a for injecting an inert gas upward (Z direction) and a large number of suction holes 201b for inhaling air, respectively, in the X direction and the Y direction. It is provided alternately at regular intervals in the direction. Then, by making the pressure load between the gas injection amount injected from the gas injection hole 201a and the intake air amount from the suction hole 201b constant, the substrate G is floated at a certain height from the surface of the levitation stage 201. It is configured.

この構成により、浮上ステージ２０１上に浮上された基板Ｇは、基板保持部２０３により左右両端が保持され、スライダ２０４がレール２０２上をＸ軸方向に移動することによって、基板Ｇが平流し搬送される。
そして、浮上ステージ２０１上を浮上搬送される基板Ｇに対し、所定の基板処理（レジストの塗布、乾燥、加熱、冷却処理等）が施されるようになっている。
尚、被処理基板を浮上搬送しながら塗布処理を行う装置については特許文献１に開示されている。 With this configuration, the substrate G that has been levitated on the levitating stage 201 is held at the left and right ends by the substrate holding unit 203, and the slider 204 moves on the rail 202 in the X-axis direction. The
A predetermined substrate processing (resist application, drying, heating, cooling processing, etc.) is performed on the substrate G that is levitated and conveyed on the levitation stage 201.
An apparatus that performs a coating process while the substrate to be processed is floated and conveyed is disclosed in Patent Document 1.

特開２００８−１３２４２２号公報JP 2008-132422 A

ところで、近年、被処理基板の大型化、及び薄型化が要求されている。
しかしながら、従来の装置構成を、単に大型化した基板面積、或いは薄くなされた基板厚さに合わせても、浮上ステージ２０１での基板搬送において不具合が生じる虞があった。
具体的には、基板面積に対する厚さが所定値よりも薄い基板Ｇを浮上ステージ２０１において浮上させた場合、図８に示すようにガス噴射孔２０１ａからのガス噴射とガス吸引孔２０１ｂからのガス吸引とによって、基板面が波打つように凹凸状の撓みが生じ、塗布処理等の基板処理に悪影響を及ぼすという課題があった。 Incidentally, in recent years, there has been a demand for an increase in size and thickness of a substrate to be processed.
However, even if the conventional apparatus configuration is simply matched to the enlarged substrate area or the reduced substrate thickness, there is a possibility that a problem may occur in the substrate transportation on the floating stage 201.
Specifically, when a substrate G having a thickness with respect to the substrate area that is thinner than a predetermined value is levitated on the levitation stage 201, as shown in FIG. 8, gas is ejected from the gas ejection holes 201a and gas from the gas suction holes 201b. As a result of the suction, the substrate surface is undulated so that the substrate surface undulates, which has a problem of adversely affecting substrate processing such as coating processing.

本発明は、上記のような従来技術の問題点に鑑みてなされたものであり、被処理基板を浮上させた状態で平流し搬送する基板搬送装置において、基板面積、或いは基板の厚さ寸法に拘わらず、基板面の平坦性を維持しながら搬送することができる基板搬送装置及び基板搬送方法を提供する。   The present invention has been made in view of the above-described problems of the prior art. In a substrate transport apparatus that transports a substrate to be processed in a floated state, the substrate area or the thickness of the substrate is reduced. A substrate transport apparatus and a substrate transport method capable of transporting the substrate surface while maintaining the flatness of the substrate surface are provided.

前記した課題を解決するために、本発明に係る基板搬送装置は、基板搬送路において被処理基板を浮上させると共に、前記基板を基板搬送方向に平流し搬送する基板搬送装置であって、上面に複数のガス噴射孔と複数のガス吸引孔とが形成された下部ステージと、前記下部ステージの上方において、該下部ステージに対向配置されると共に、下面に複数のガス噴射孔とガス吸引孔とが形成された上部ステージと、前記下部ステージと上部ステージとに挟まれた空間に形成された前記基板搬送路と、前記基板搬送路において前記基板の幅方向両端を保持し、基板搬送方向に搬送する基板搬送手段とを備え、前記下部ステージと上部ステージとにそれぞれ形成された前記ガス噴射孔同士が対向すると共に、前記ガス吸引孔同士が対向することに特徴を有する。
尚、前記下部ステージと上部ステージとの間で対向する前記ガス噴射孔は、それぞれ孔の中心線が一致するように配置され、前記下部ステージと上部ステージとの間で対向する前記ガス吸引孔は、それぞれ孔の中心線が一致するように配置されていることが望ましい。
また、前記下部ステージと上部ステージとの間で対向する前記ガス噴射孔からそれぞれ噴射されるガスの圧力または流量は、同一であることが望ましく、前記下部ステージと上部ステージとの間で対向する前記ガス吸引孔からそれぞれ吸引されるガスの圧力または流量は、同一であることが望ましい。 In order to solve the above-described problems, a substrate transfer apparatus according to the present invention is a substrate transfer apparatus that floats a substrate to be processed in a substrate transfer path, and carries the substrate by flowing in the substrate transfer direction. A lower stage in which a plurality of gas injection holes and a plurality of gas suction holes are formed, and is disposed above the lower stage so as to face the lower stage, and a plurality of gas injection holes and gas suction holes are provided on the lower surface. The formed upper stage, the substrate transport path formed in a space sandwiched between the lower stage and the upper stage, and both ends of the substrate in the width direction are held in the substrate transport path, and transported in the substrate transport direction. Substrate transport means, wherein the gas injection holes formed in the lower stage and the upper stage face each other and the gas suction holes face each other. Having.
The gas injection holes facing each other between the lower stage and the upper stage are arranged so that the center lines of the holes coincide with each other, and the gas suction holes facing each other between the lower stage and the upper stage are It is desirable that the holes are arranged so that the center lines of the holes coincide with each other.
The pressure or flow rate of the gas injected from the gas injection holes facing each other between the lower stage and the upper stage is preferably the same, and the gas facing between the lower stage and the upper stage is preferably the same. It is desirable that the pressure or flow rate of the gas sucked from each gas suction hole is the same.

このように構成することにより、前記下部ステージと上部ステージとに挟まれた空間に形成された基板搬送路において、上下方向からのガス噴射の圧力または流量が均衡すると共に、上下方向からの吸引圧力または吸引流量が均衡する気流を形成することができる。
これにより、前記基板搬送路に搬入された被処理基板においては、上下から加わる圧力負荷が相殺されるため、撓みを抑制することができる。
したがって、この構成によれば、基板面積、或いは基板の厚さ寸法に拘わらず、基板面の平坦性を維持しながら搬送することができる。 With this configuration, in the substrate transport path formed in the space sandwiched between the lower stage and the upper stage, the pressure or flow rate of the gas jet from the vertical direction is balanced, and the suction pressure from the vertical direction is balanced. Alternatively, an air flow in which the suction flow rate is balanced can be formed.
Thereby, in the to-be-processed substrate carried in to the said board | substrate conveyance path, since the pressure load added from the upper and lower sides is canceled, bending can be suppressed.
Therefore, according to this structure, it can convey, maintaining the flatness of a substrate surface irrespective of a board | substrate area or the thickness dimension of a board | substrate.

また、前記した課題を解決するために、本発明に係る基板搬送方法は、上面に複数のガス噴射孔と複数のガス吸引孔とが形成された下部ステージの上方に、下面に複数のガス噴射孔とガス吸引孔とが形成された上部ステージが対向配置され、前記下部ステージと上部ステージとに挟まれた空間に形成された基板搬送路において、被処理基板を浮上させると共に基板搬送方向に平流し搬送する基板搬送方法であって、前記下部ステージと前記上部ステージとにそれぞれ形成されたガス噴射孔からガス噴射を行うと共に、前記下部ステージと前記上部ステージとにそれぞれ形成されたガス吸引孔から吸引し、前記基板搬送路に所定の気流を形成するステップと、前記基板搬送路に被処理基板を搬入するステップと、前記基板搬送路に搬入された前記基板の幅方向両端を保持するステップと、前記基板の幅方向両端を保持した状態で該基板を基板搬送方向に搬送するステップとを含むことに特徴を有する。
尚、基板の熱処理を行う場合には、前記基板搬送路に被処理基板を搬入するステップの前に、前記下部ステージと前記上部ステージとにそれぞれ形成されたガス噴射孔から噴射されるガスを加熱するステップを含むことが望ましい。
このような方法によれば、前記下部ステージと上部ステージとに挟まれた空間に形成された基板搬送路において、上下方向からのガス噴射の圧力（または流量）が均衡すると共に、上下方向からの吸引圧力（または吸引流量）が均衡する気流を形成することができる。
これにより、前記基板搬送路に搬入された被処理基板においては、上下から加わる圧力負荷が相殺されるため、撓みを抑制することができる。
したがって、この方法によれば、基板面積、或いは基板の厚さ寸法に拘わらず、基板面の平坦性を維持しながら搬送することができる。 In order to solve the above-described problems, a substrate transfer method according to the present invention includes a plurality of gas injections on a lower surface above a lower stage in which a plurality of gas injection holes and a plurality of gas suction holes are formed on an upper surface. An upper stage in which a hole and a gas suction hole are formed is opposed to each other, and the substrate to be processed is levitated and flattened in the substrate transport direction in a substrate transport path formed in a space sandwiched between the lower stage and the upper stage. A substrate transfer method for carrying a flow, wherein gas is injected from gas injection holes respectively formed in the lower stage and the upper stage, and from gas suction holes respectively formed in the lower stage and the upper stage. A step of sucking and forming a predetermined air flow in the substrate transport path; a step of transporting a substrate to be processed into the substrate transport path; and a state before being transported into the substrate transport path Characterized in that comprises a step of holding both ends in the width direction of the substrate, and a step of transporting the substrate to the substrate transport direction while holding both ends in the width direction of the substrate.
When the substrate is heat-treated, the gas injected from the gas injection holes respectively formed in the lower stage and the upper stage is heated before the step of carrying the substrate into the substrate transfer path. It is desirable to include the step to do.
According to such a method, in the substrate transport path formed in the space sandwiched between the lower stage and the upper stage, the pressure (or flow rate) of the gas jet from the vertical direction is balanced, and from the vertical direction An air flow in which the suction pressure (or suction flow rate) is balanced can be formed.
Thereby, in the to-be-processed substrate carried in to the said board | substrate conveyance path, since the pressure load added from the upper and lower sides is canceled, bending can be suppressed.
Therefore, according to this method, the substrate can be transported while maintaining the flatness of the substrate surface regardless of the substrate area or the substrate thickness.

本発明によれば、被処理基板を浮上させた状態で平流し搬送する基板搬送装置において、基板面積、或いは基板の厚さ寸法に拘わらず、基板面の平坦性を維持しながら搬送することができる基板搬送装置及び基板搬送方法を得ることができる。   According to the present invention, in a substrate transport apparatus that transports the substrate to be processed while being floated, the substrate can be transported while maintaining the flatness of the substrate surface regardless of the substrate area or the substrate thickness. A substrate transport apparatus and a substrate transport method that can be obtained can be obtained.

図１は、本発明にかかる第一の実施形態の全体概略構成を示す平面図である。FIG. 1 is a plan view showing an overall schematic configuration of the first embodiment according to the present invention. 図２は、図１の熱処理ユニット（基板搬送装置）の側面図である。FIG. 2 is a side view of the heat treatment unit (substrate transfer apparatus) of FIG. 図３は、図１の熱処理ユニット（基板搬送装置）のＡ−Ａ矢視断面図である。FIG. 3 is a cross-sectional view of the heat treatment unit (substrate transfer apparatus) of FIG. 図４（ａ）〜図４（ｃ）は、図１の熱処理ユニット（基板搬送装置）が備える浮上ステージに形成されたガス噴射孔とガス吸引孔の配置関係を示す平面図である。FIGS. 4A to 4C are plan views showing the arrangement relationship between the gas injection holes and the gas suction holes formed in the levitation stage provided in the heat treatment unit (substrate transfer apparatus) of FIG. 図５は、図３の断面図の一部拡大図である。FIG. 5 is a partially enlarged view of the cross-sectional view of FIG. 図６は、図１の熱処理ユニット（基板搬送装置）の動作を説明するためのフローである。FIG. 6 is a flow for explaining the operation of the heat treatment unit (substrate transfer apparatus) of FIG. 図７は、従来の基板搬送装置の概略構成を示す平面図である。FIG. 7 is a plan view showing a schematic configuration of a conventional substrate transfer apparatus. 図８は、従来の基板搬送装置における課題を説明するための断面図である。FIG. 8 is a cross-sectional view for explaining a problem in the conventional substrate transfer apparatus.

以下、本発明の基板搬送装置にかかる一実施形態を、図面に基づき説明する。尚、この実施形態にあっては、本発明に係る基板搬送装置が、被処理基板であるガラス基板を浮上搬送しながら、前記基板に対し加熱処理を行う熱処理ユニットにおいて適用される場合を例にとって説明する。
図１は、本発明の基板搬送装置が適用される熱処理ユニットの平面図であり、図２は、図１の側面図である。また、図３は、図１のＡ−Ａ矢視断面図である。 Hereinafter, an embodiment according to a substrate transfer apparatus of the present invention will be described with reference to the drawings. In this embodiment, the substrate transfer apparatus according to the present invention is applied as an example to a heat treatment unit that heat-treats the substrate while levitating and transferring the glass substrate that is the substrate to be processed. explain.
FIG. 1 is a plan view of a heat treatment unit to which the substrate transfer apparatus of the present invention is applied, and FIG. 2 is a side view of FIG. 3 is a cross-sectional view taken along arrow AA in FIG.

図１乃至図３に示すように、この熱処理ユニット１は、ガラス基板Ｇを枚様式に一枚ずつ浮上搬送するための浮上ステージ２を備え、基板Ｇが所謂平流し搬送されるように構成されている。この浮上ステージ２は、図２、図３に示すように下部ステージ２Ａ上に所定の間隔を空けて上部ステージ２Ｂが配置され、それらステージ間に挟まれた空間が基板搬送路２Ｃとなされる。   As shown in FIGS. 1 to 3, the heat treatment unit 1 includes a levitation stage 2 for levitating and conveying glass substrates G one by one in a sheet mode, and the substrate G is configured to be conveyed in a so-called flat flow. ing. As shown in FIGS. 2 and 3, in the levitation stage 2, an upper stage 2B is arranged on the lower stage 2A with a predetermined interval, and a space sandwiched between the stages serves as a substrate transport path 2C.

下部ステージ２Ａの上面、及び上部ステージ２Ｂの下面には、図４（ａ）に示すように多数のガス噴射孔２ａとガス吸引孔２ｂとがＸ方向とＹ方向に一定間隔で交互に設けられている。
尚、複数のガス噴射孔２ａとガス吸引孔２ｂの配置（レイアウト）は、図４（ａ）のように千鳥状に配置してもよいし、或いは、図４（ｂ）、図４（ｃ）に示すようにＸ軸方向またはＹ軸方向に交互に配列してもよい。 On the upper surface of the lower stage 2A and the lower surface of the upper stage 2B, as shown in FIG. 4A, a large number of gas injection holes 2a and gas suction holes 2b are alternately provided at regular intervals in the X and Y directions. ing.
The arrangement (layout) of the plurality of gas injection holes 2a and gas suction holes 2b may be arranged in a staggered manner as shown in FIG. 4 (a), or may be arranged in FIGS. 4 (b) and 4 (c). ) May be alternately arranged in the X-axis direction or the Y-axis direction.

下部ステージ２Ａと上部ステージ２Ｂの内部には、図３に示すように、それぞれ正圧マニホールド３が形成され、各ステージにおいて、この正圧マニホールド３に全てのガス噴射孔２ａが連通している。正圧マニホールド３には、同一の圧縮ガス供給源４から圧縮された不活性ガスが供給され、全てのガス噴射孔２ａから同一圧力（または同一流量）で噴射されるようになっている。   As shown in FIG. 3, positive pressure manifolds 3 are respectively formed in the lower stage 2 </ b> A and the upper stage 2 </ b> B, and all the gas injection holes 2 a communicate with the positive pressure manifold 3 in each stage. The positive pressure manifold 3 is supplied with the inert gas compressed from the same compressed gas supply source 4 and is injected from all the gas injection holes 2a at the same pressure (or the same flow rate).

さらに下部ステージ２Ａと上部ステージ２Ｂの内部においては、図示するように負圧マニホールド５が形成され、各ステージにおいて、この負圧マニホールド５に全てのガス吸引孔２ｂが連通している。負圧マニホールド５には、同一の真空源６が接続され、全てのガス吸引孔２ｂから同一圧力（または同一流量）でガス吸引を行うようになっている。
また、前記圧縮ガス供給源４と前記真空源６とは、それぞれコンピュータからなる制御部２０（制御手段）によって、その駆動制御がなされる。 Further, in the lower stage 2A and the upper stage 2B, a negative pressure manifold 5 is formed as shown in the figure, and all the gas suction holes 2b communicate with the negative pressure manifold 5 in each stage. The same vacuum source 6 is connected to the negative pressure manifold 5, and gas suction is performed at the same pressure (or the same flow rate) from all the gas suction holes 2b.
The compressed gas supply source 4 and the vacuum source 6 are driven and controlled by a control unit 20 (control means) comprising a computer.

尚、本実施形態においては、下部ステージ２Ａと上部ステージ２Ｂとに対し同一の圧縮ガス供給源４と同一の真空源６によりガスの供給及び吸引を行うようにしているが、下部ステージ２Ａと上部ステージ２Ｂとに対しそれぞれ独立した圧縮ガス供給源４と真空源６とによりガスの供給及び吸引を行い、制御部２０により噴射圧（または噴射流量）及び吸引圧（または吸引流量）を個別に制御してもよい。   In the present embodiment, gas is supplied and sucked to the lower stage 2A and the upper stage 2B by the same compressed gas supply source 4 and the same vacuum source 6; Gas is supplied and sucked to the stage 2B by the compressed gas supply source 4 and the vacuum source 6 independent from each other, and the injection pressure (or injection flow rate) and the suction pressure (or suction flow rate) are individually controlled by the control unit 20. May be.

また、図３、図５（図３の一部拡大断面図）に示すように、下部ステージ２Ａと上部ステージ２Ｂにそれぞれ形成されたガス噴射孔２ａ同士が対向して対をなし、各対のガス噴射孔２ａの中心線が一致するように配置されている。
また、下部ステージ２Ａと上部ステージ２Ｂにそれぞれ形成されたガス吸引孔２ｂ同士が対向して対をなし、各対のガス吸引孔２ｂの中心線が一致するように配置されている。 Further, as shown in FIGS. 3 and 5 (partially enlarged sectional view of FIG. 3), the gas injection holes 2a formed in the lower stage 2A and the upper stage 2B face each other to form a pair. It arrange | positions so that the centerline of the gas injection hole 2a may correspond.
Further, the gas suction holes 2b formed in the lower stage 2A and the upper stage 2B are opposed to each other to form a pair, and the center lines of the gas suction holes 2b of each pair are aligned.

このようにガス噴射孔２ａとガス吸気孔２ｂとが配置されることによって、基板搬送路２Ｃにおいて、上下方向からのガス噴射の圧力が均衡すると共に上下方向からの吸引圧力が均衡する気流を形成することができる。そのため、基板搬送路２Ｃに搬入された基板Ｇにあっては、上下から加わる圧力負荷が相殺され、撓みを抑制した状態で浮上させることができる。   By arranging the gas injection hole 2a and the gas intake hole 2b in this way, an air flow is formed in the substrate transport path 2C in which the pressure of gas injection from the vertical direction is balanced and the suction pressure from the vertical direction is balanced. can do. Therefore, in the board | substrate G carried in to 2C of board | substrate conveyance paths, the pressure load added from the upper and lower sides is canceled, and it can be floated in the state which suppressed bending.

また、図３に示すように、下部ステージ２Ａにおいては、正圧マニホールド３の底部に、上部ステージ２Ｂにおいては、正圧マニホールド３の天井部に、面状のヒータ７が設けられている。このヒータ７は、ヒータ駆動部８からの電力供給により発熱し、正圧マニホールド３内の温度、及び例えばＳＵＳからなるステージ２Ａ、２Ｂ自体の温度を昇温するようになっている。
これにより、ガス噴射孔２ａから噴射されるガスの温度は所定温度の熱風（温風）となり、これが基板Ｇに吹き付けられて、基板Ｇが加熱されるように構成されている。
尚、ヒータ駆動部８は、制御部２０により駆動制御される。 As shown in FIG. 3, a planar heater 7 is provided at the bottom of the positive pressure manifold 3 in the lower stage 2 </ b> A and at the ceiling of the positive pressure manifold 3 in the upper stage 2 </ b> B. The heater 7 generates heat by supplying power from the heater driving unit 8 and raises the temperature in the positive pressure manifold 3 and the temperatures of the stages 2A and 2B made of, for example, SUS.
Thereby, the temperature of the gas injected from the gas injection hole 2a becomes hot air (warm air) of a predetermined temperature, and this is blown onto the substrate G so that the substrate G is heated.
The heater drive unit 8 is driven and controlled by the control unit 20.

また、浮上ステージ２の幅方向（Ｙ軸方向）の左右側方には、Ｘ軸方向に平行に延びる一対のガイドレール９が設けられている。
各ガイドレール９には、基板搬送方向（Ｘ軸方向）に移動可能に取り付けられたスライダ１０（基板搬送手段）が２台ずつ設けられている。各スライダ１０には、ガラス基板Ｇの端部を下方から吸着保持する基板保持部１１が設けられ、４つの基板保持部１１により基板Ｇの角部が保持されている。 A pair of guide rails 9 extending in parallel with the X-axis direction are provided on the left and right sides of the levitation stage 2 in the width direction (Y-axis direction).
Each guide rail 9 is provided with two sliders 10 (substrate transport means) that are movably attached in the substrate transport direction (X-axis direction). Each slider 10 is provided with a substrate holding portion 11 that sucks and holds the end portion of the glass substrate G from below, and the corner portions of the substrate G are held by the four substrate holding portions 11.

各基板保持部１１は、図３に示すように、基板Ｇの下面に対し吸引動作により吸着可能な吸着部材１１ａと、吸着部材１１ａをスライダ１０上に立設された支柱１１ｂに沿って昇降移動させる昇降部材１１ｃとを有する。
尚、吸着部材１１ａには、吸引ポンプ（図示せず）が接続され、基板Ｇとの接触領域の空気を吸引して真空状態に近づけることにより、基板Ｇに吸着するようになされている。
また、スライダ１０は、制御部２０によって、その駆動制御がなされる。 As shown in FIG. 3, each substrate holding unit 11 moves up and down along an adsorption member 11 a that can be adsorbed to the lower surface of the substrate G by an adsorption operation, and a support column 11 b that is erected on the slider 10. Elevating member 11c to be moved.
Note that a suction pump (not shown) is connected to the suction member 11a, and sucks the air in the contact area with the substrate G to bring it close to a vacuum state, thereby attracting the substrate G.
The drive of the slider 10 is controlled by the control unit 20.

続いて、このように構成された熱処理ユニット１における基板搬送の一連の流れについて図６を用いて説明する。
熱処理ユニット１においては、ガラス基板Ｇが搬入される前に、先ず、制御部２０の制御によりヒータ駆動部８が駆動され、ヒータ７が所定の供給電力に応じて発熱される。これにより、正圧マニホールド３内の温度が昇温され、及び下部ステージ２Ａ、上部ステージ２Ｂが所定温度に加熱される（図６のステップＳ１）。 Next, a series of substrate transfer steps in the heat treatment unit 1 configured as described above will be described with reference to FIG.
In the heat treatment unit 1, before the glass substrate G is carried in, first, the heater drive unit 8 is driven under the control of the control unit 20, and the heater 7 generates heat according to a predetermined supply power. Thereby, the temperature in the positive pressure manifold 3 is raised, and the lower stage 2A and the upper stage 2B are heated to a predetermined temperature (step S1 in FIG. 6).

また、制御部２０は、圧縮ガス供給源４から正圧マニホールド３に圧縮された不活性ガスを供給させ、真空源６により負圧マニホールド５内の雰囲気を排気させる。これにより、下部ステージ２Ａと上部ステージ２Ｂとの間の空間、即ち基板搬送路２Ｃには、各ステージ２Ａ、２Ｂのガス噴射孔２ａから所定温度に熱せられたガスが噴射され、基板搬送路２Ｃに噴射されたガスはガス吸引孔２ｂから吸引される状態となされる（図６のステップＳ２）。   Further, the control unit 20 supplies the compressed inert gas compressed from the compressed gas supply source 4 to the positive pressure manifold 3 and exhausts the atmosphere in the negative pressure manifold 5 from the vacuum source 6. As a result, the gas heated to a predetermined temperature is injected from the gas injection holes 2a of the stages 2A and 2B into the space between the lower stage 2A and the upper stage 2B, that is, the substrate transfer path 2C, and the substrate transfer path 2C. The gas injected into the gas is brought into a state of being sucked from the gas suction hole 2b (step S2 in FIG. 6).

尚、図３の構成にあっては、下部ステージ２Ａと上部ステージ２Ｂのガス噴射孔２ａは同一の圧縮ガス供給源４に接続されており、上下全てのガス噴射孔２ａから同一圧力（または同一流量）でガス噴射がなされる。また、下部ステージ２Ａと上部ステージ２Ｂのガス吸引孔２ｂは同一の真空源６に接続されており、上下全てのガス吸引孔２ｂから同一圧力（または同一流量）でガス吸引がなされる。   In the configuration of FIG. 3, the gas injection holes 2a of the lower stage 2A and the upper stage 2B are connected to the same compressed gas supply source 4, and the same pressure (or the same) is applied from all the upper and lower gas injection holes 2a. Gas injection is performed at a flow rate). The gas suction holes 2b of the lower stage 2A and the upper stage 2B are connected to the same vacuum source 6, and gas is sucked from the upper and lower gas suction holes 2b at the same pressure (or the same flow rate).

基板搬送路２Ｃに所定の熱風気流が形成されると、浮上ステージ２の基板搬送路２Ｃにガラス基板Ｇが搬入される（図６のステップＳ３）。
また、基板搬送路２Ｃに搬入された基板Ｇは、その幅方向両端が基板保持部１１によって保持される（図６のステップＳ４）。 When a predetermined hot air stream is formed in the substrate transport path 2C, the glass substrate G is carried into the substrate transport path 2C of the levitation stage 2 (step S3 in FIG. 6).
Further, the substrate G carried into the substrate transport path 2C is held by the substrate holder 11 at both ends in the width direction (step S4 in FIG. 6).

ここで、上下（Ｚ軸方向）に対向する各ガス噴射孔２ａ同士は、その中心線が一致するように配置され、同一圧力（または同一流量）でガス噴射しているため、上下方向からのガス噴射の圧力（または流量）が均衡する。また、上下（Ｚ軸方向）に対向する各ガス吸引孔２ｂ同士は、その中心線が一致するように配置され、同一圧力（または同一流量）でガス吸引しているため、上下方向からの吸引圧力（または吸引流量）が均衡する。
これにより、基板Ｇに対し上下から加わる圧力負荷が相殺され、基板Ｇが撓むことなく（撓みが抑制された状態で）基板保持部１１により保持される。 Here, the gas injection holes 2a facing vertically (in the Z-axis direction) are arranged so that their center lines coincide with each other, and gas is injected at the same pressure (or the same flow rate). The pressure (or flow rate) of gas injection is balanced. In addition, since the gas suction holes 2b opposed in the vertical direction (Z-axis direction) are arranged so that their center lines coincide with each other and gas is sucked at the same pressure (or the same flow rate), suction from the vertical direction is performed. The pressure (or suction flow rate) is balanced.
Thereby, the pressure load applied to the substrate G from above and below is offset, and the substrate G is held by the substrate holding unit 11 without being bent (in a state where the bending is suppressed).

基板Ｇは、スライダ１０がレール９上を移動することにより、平坦性が維持された状態で、基板搬送路２Ｃを搬送される（図６のステップＳ５）。
そして、この基板搬送中において、基板Ｇの上下面には、所定温度の熱風気流が接することになり、基板Ｇは所定温度に加熱されて基板搬送路２Ｃから搬出され、加熱処理が完了する（図６のステップＳ６）。 The substrate G is transported on the substrate transport path 2C in a state where flatness is maintained as the slider 10 moves on the rail 9 (step S5 in FIG. 6).
During the substrate transfer, the upper and lower surfaces of the substrate G are in contact with a hot air stream having a predetermined temperature, and the substrate G is heated to a predetermined temperature and unloaded from the substrate transfer path 2C to complete the heating process ( Step S6 in FIG.

以上のように、本発明に係る一実施形態によれば、それぞれ複数のガス噴射孔２ａとガス吸引孔２ｂとを有する下部ステージ２Ａと上部ステージ２Ｂとが対向配置され、その２つのステージに挟まれた空間に基板搬送路２Ｃが形成される。また、各ステージにそれぞれ形成されたガス噴射孔２ａ同士が対向して全て対をなすと共に同一圧力（または同一流量）でガス噴射を行い、ガス吸引孔２ｂ同士が対向して全て対をなすと共に同一圧力（または同一流量）でガス吸引を行うように構成されている。
これにより、基板搬送路２Ｃにおいて、上下方向からのガス噴射の圧力（または流量）が均衡すると共に、上下方向からの吸引圧力（または吸引流量）が均衡する気流を形成することができる。また、そのような基板搬送路２Ｃに搬入された基板Ｇにおいては、上下から加わる圧力負荷が相殺されるため、撓みを抑制することができる。
したがって、本実施形態によれば、基板面積、或いは基板の厚さ寸法に拘わらず、基板面の平坦性を維持しながら搬送することができる。 As described above, according to one embodiment of the present invention, the lower stage 2A and the upper stage 2B each having a plurality of gas injection holes 2a and gas suction holes 2b are arranged to face each other and sandwiched between the two stages. A substrate transport path 2C is formed in the space. Further, the gas injection holes 2a formed in each stage face each other to make a pair and perform gas injection at the same pressure (or the same flow rate), and the gas suction holes 2b face each other to make a pair. Gas suction is performed at the same pressure (or the same flow rate).
As a result, in the substrate transport path 2C, it is possible to form an air flow in which the pressure (or flow rate) of gas injection from the vertical direction is balanced and the suction pressure (or suction flow rate) from the vertical direction is balanced. Moreover, in the board | substrate G carried in in such a board | substrate conveyance path 2C, since the pressure load added from the upper and lower sides is canceled, bending can be suppressed.
Therefore, according to the present embodiment, the substrate can be transported while maintaining the flatness of the substrate surface regardless of the substrate area or the substrate thickness.

尚、前記実施の形態にあっては、熱処理ユニット１において、ヒータ７を正圧マニホールド３内に配置する構成としたが、ガス噴射孔２ａから熱風を噴射させる構成としては、それに限定されるものではない。
例えば、下部ステージ２Ａと上部ステージ２Ｂの外面にヒータを貼り付けるように設けてもよいし、圧縮ガス供給源４から熱風を供給してもよい。
また、下部ステージ２Ａと上部ステージ２Ｂのガス噴射孔２ａから同様に熱風を噴射するようにしたが、いずれか一方（例えば、被処理面側のみ）に熱風を噴射する構成としてもよい。 In the embodiment, in the heat treatment unit 1, the heater 7 is arranged in the positive pressure manifold 3. However, the structure for injecting hot air from the gas injection hole 2a is limited thereto. is not.
For example, a heater may be provided on the outer surfaces of the lower stage 2A and the upper stage 2B, or hot air may be supplied from the compressed gas supply source 4.
Moreover, although hot air was similarly injected from the gas injection hole 2a of lower stage 2A and upper stage 2B, it is good also as a structure which injects hot air to any one (for example, only to-be-processed surface side).

また、前記実施の形態にあっては、下部ステージ２Ａと上部ステージ２Ｂとにそれぞれ形成されたガス噴射孔２ａから同一圧力（または同一流量）でガス噴射を行い、ガス吸引孔２ｂから同一圧力（または同一流量）でガス吸引を行うものとした。
しかしながら、本発明にあっては、その形態に限定されるものではなく、基板Ｇの自重を考慮して下部ステージ２Ａと上部ステージ２Ｂとにおけるガス噴射圧（または噴射流量）、及びガス吸引圧（または吸引流量）をそれぞれ決定してもよい。
具体的には、下部ステージ２Ａからの噴射ガスによる浮上圧（流量）に対しては、基板Ｇの自重が加わるため、例えば噴射圧を設定する場合、下部ステージ２Ａからの噴射ガスの圧力は、上部ステージ２Ｂからの噴射ガスの圧力と、基板Ｇの自重圧を加えた値としてもよい。また、例えば吸引圧を設定する場合、上部ステージ２Ｂからの吸引圧は、下部ステージ２Ａからの吸引圧と、基板Ｇの自重圧を加えた値としてもよい。 In the embodiment, gas is injected at the same pressure (or the same flow rate) from the gas injection holes 2a formed in the lower stage 2A and the upper stage 2B, respectively, and the same pressure ( Alternatively, gas suction is performed at the same flow rate).
However, in the present invention, it is not limited to the form, and the gas injection pressure (or the injection flow rate) and the gas suction pressure (or the injection flow rate) in the lower stage 2A and the upper stage 2B are considered in consideration of the weight of the substrate G. Alternatively, the suction flow rate) may be determined.
Specifically, since the dead weight of the substrate G is applied to the flying pressure (flow rate) due to the jet gas from the lower stage 2A, for example, when setting the jet pressure, the pressure of the jet gas from the lower stage 2A is: A value obtained by adding the pressure of the jet gas from the upper stage 2B and the self-weight pressure of the substrate G may be used. For example, when the suction pressure is set, the suction pressure from the upper stage 2B may be a value obtained by adding the suction pressure from the lower stage 2A and the self-weight of the substrate G.

また、前記実施の形態において、熱処理ユニット１は、基板Ｇを加熱処理する装置として説明したが、ヒータ７に代えて、冷却手段としての冷却プレート等を配置することにより、基板Ｇを所定温度に冷却する熱処理ユニットとしても用いることができる。
また、本発明にかかる基板搬送装置は、熱処理ユニットに限定されることなく、レジスト塗布処理ユニット等の他の基板処理ユニットにおいても好適に用いることができる。 Moreover, in the said embodiment, although the heat processing unit 1 demonstrated as an apparatus which heat-processes the board | substrate G, it replaces with the heater 7 and arrange | positions the board | substrate G to predetermined temperature by arrange | positioning the cooling plate etc. as a cooling means. It can also be used as a heat treatment unit for cooling.
Further, the substrate transfer apparatus according to the present invention is not limited to the heat treatment unit, but can be suitably used in other substrate processing units such as a resist coating unit.

１ 熱処理ユニット（基板搬送装置）
２ 浮上ステージ
２Ａ 下部ステージ
２Ｂ 上部ステージ
２Ｃ 基板搬送路
２ａ ガス噴出孔
２ｂ ガス吸引孔
１０ スライダ（基板搬送手段）
Ｇ ガラス基板（被処理基板） 1 Heat treatment unit (substrate transfer device)
2 Floating stage 2A Lower stage 2B Upper stage 2C Substrate transport path 2a Gas ejection hole 2b Gas suction hole 10 Slider (substrate transport means)
G Glass substrate (substrate to be processed)

Claims (5)

基板搬送路において被処理基板を浮上させると共に、前記基板を基板搬送方向に平流し搬送する基板搬送装置であって、
上面に複数のガス噴射孔と複数のガス吸引孔とが形成された下部ステージと、前記下部ステージの上方において、該下部ステージに対向配置されると共に、下面に複数のガス噴射孔とガス吸引孔とが形成された上部ステージと、前記下部ステージと上部ステージとに挟まれた空間に形成された前記基板搬送路と、前記基板搬送路において前記基板の幅方向両端を保持し、基板搬送方向に搬送する基板搬送手段とを備え、
前記下部ステージと上部ステージとにそれぞれ形成された前記ガス噴射孔同士が対向すると共に、前記ガス吸引孔同士が対向することを特徴とする基板搬送装置。 A substrate transfer apparatus for levitating a substrate to be processed in a substrate transfer path, and for transferring and transferring the substrate in the substrate transfer direction.
A lower stage having a plurality of gas injection holes and a plurality of gas suction holes formed on the upper surface, and disposed above the lower stage so as to face the lower stage, and a plurality of gas injection holes and gas suction holes formed on the lower surface. And the substrate transport path formed in a space sandwiched between the lower stage and the upper stage, holding both ends of the substrate in the width direction in the substrate transport path, and in the substrate transport direction Substrate transport means for transporting,
The substrate transfer apparatus, wherein the gas injection holes formed in the lower stage and the upper stage face each other, and the gas suction holes face each other. 前記下部ステージと上部ステージとの間で対向する前記ガス噴射孔は、それぞれ孔の中心線が一致するように配置され、
前記下部ステージと上部ステージとの間で対向する前記ガス吸引孔は、それぞれ孔の中心線が一致するように配置されていることを特徴とする請求項１に記載された基板搬送装置。 The gas injection holes facing each other between the lower stage and the upper stage are arranged so that the center lines of the holes coincide with each other,
2. The substrate transfer apparatus according to claim 1, wherein the gas suction holes facing each other between the lower stage and the upper stage are arranged so that center lines of the holes coincide with each other. 前記下部ステージと上部ステージとの間で対向する前記ガス噴射孔からそれぞれ噴射されるガスの圧力または流量は同一であり、
前記下部ステージと上部ステージとの間で対向する前記ガス吸引孔からそれぞれ吸引されるガスの圧力または流量は同一であることを特徴とする請求項１または請求項２に記載された基板搬送装置。 The pressure or flow rate of the gas injected from the gas injection holes facing each other between the lower stage and the upper stage is the same,
3. The substrate transfer apparatus according to claim 1, wherein the pressure or flow rate of the gas sucked from the gas suction holes facing each other between the lower stage and the upper stage is the same. 上面に複数のガス噴射孔と複数のガス吸引孔とが形成された下部ステージの上方に、下面に複数のガス噴射孔とガス吸引孔とが形成された上部ステージが対向配置され、前記下部ステージと上部ステージとに挟まれた空間に形成された基板搬送路において、被処理基板を浮上させると共に基板搬送方向に平流し搬送する基板搬送方法であって、
前記下部ステージと前記上部ステージとにそれぞれ形成されたガス噴射孔からガス噴射を行うと共に、前記下部ステージと前記上部ステージとにそれぞれ形成されたガス吸引孔から吸引し、前記基板搬送路に所定の気流を形成するステップと、
前記基板搬送路に被処理基板を搬入するステップと、
前記基板搬送路に搬入された前記基板の幅方向両端を保持するステップと、
前記基板の幅方向両端を保持した状態で該基板を基板搬送方向に搬送するステップとを含むことを特徴とする基板搬送方法。 An upper stage having a plurality of gas injection holes and gas suction holes formed on the lower surface is disposed oppositely above a lower stage having a plurality of gas injection holes and a plurality of gas suction holes formed on the upper surface. In a substrate transport path formed in a space sandwiched between the upper stage and the upper stage, the substrate transport method for floating and transporting the substrate to be processed in a flat flow in the substrate transport direction,
Gas injection is performed from the gas injection holes formed in the lower stage and the upper stage, and suction is performed from the gas suction holes formed in the lower stage and the upper stage, respectively. Forming an air flow;
Carrying the substrate to be processed into the substrate transport path;
Holding both ends in the width direction of the substrate carried into the substrate transport path;
And transporting the substrate in the substrate transport direction while holding both ends in the width direction of the substrate. 前記基板搬送路に被処理基板を搬入するステップの前に、
前記下部ステージと前記上部ステージとにそれぞれ形成されたガス噴射孔から噴射されるガスを加熱するステップを含むことを特徴とする請求項４に記載された基板搬送方法。 Before the step of loading the substrate to be processed into the substrate transport path,
5. The substrate transfer method according to claim 4, further comprising the step of heating the gas injected from the gas injection holes respectively formed in the lower stage and the upper stage.
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