JP2012181308A - Electro-optical device and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device and electronic device which have improved radio wave shielding performance and provide stable operation quality.SOLUTION: On an element substrate 10, the electro-optical device comprises: a pixel electrode 15; a TFT (thin film transistor ) 30 electrically connected to the pixel electrode 15; and at least five conductive layers provided between the TFT 30 and the pixel electrode 15. In the five conductive layers, at least every other layers are set to a fixed potential. In particular, intermediate potential between the maximum potential of a driving voltage and reference potential is applied to a wiring 31b of the first conductive layer 31 planarly overlapping a gate electrode 30g, the third conductive layer 33, and the second capacitance electrode 16a as the fifth conductive layer.

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  As the electro-optical device, a scanning line, a data line, a pixel electrode provided for each pixel, a thin film transistor, and a semiconductor layer of the thin film transistor and the pixel electrode are stacked on the substrate. A relay wiring that relays between the drain region of the layer and the pixel electrode; a first shield layer that is stacked between the data line and the relay wiring and held at a predetermined potential; and a layer that is stacked between the pixel electrode and the relay wiring and has a predetermined potential An electro-optical device including a second shield layer to be held is known (Patent Document 1).

  According to the electro-optical device disclosed in Patent Document 1, high-quality image display can be obtained by reducing electromagnetic noise on the image signal.

JP 2010-39212 A

  However, in the electro-optical device of Patent Document 1, there is no shield layer between the gate electrode of the thin film transistor and the data line connected to the source region. Therefore, the fluctuation of the potential of the data line affects the potential of the gate electrode, so that an appropriate output potential from the thin film transistor cannot be obtained, and there is a possibility of causing display defects such as crosstalk.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example includes a pixel electrode, a data line, a transistor provided corresponding to the pixel electrode and electrically connected to the data line, the transistor, and the pixel electrode. A storage capacitor electrically connected to the transistor, and at least five conductive layers provided between the transistor and the pixel electrode and including the data line and the storage capacitor. The conductive layer has a fixed potential every other layer.

  According to this configuration, it is possible to provide an electro-optical device in which the conductive layers connected to a fixed potential and arranged every other layer function as a shield layer, and the electromagnetic wave shielding property between wirings between the transistor and the pixel electrode is improved. .

Application Example 2 In the electro-optical device according to the application example described above, the transistor includes a semiconductor layer and a gate electrode disposed on the semiconductor layer via an insulating film, and the at least five conductive layers include: A first conductive layer disposed between the gate electrode and the pixel electrode so as to planarly overlap the gate electrode; and the first conductive layer and the plane between the first conductive layer and the pixel electrode. A second conductive layer including the data line disposed so as to overlap with the second conductive layer, and a third conductive layer disposed between the second conductive layer and the pixel electrode so as to planarly overlap the second data layer. A first capacitor electrode as a fourth conductive layer disposed between the third conductive layer and the pixel electrode so as to planarly overlap the third conductive layer, the first capacitor electrode, and the pixel Opposite the first capacitor electrode with a dielectric layer between the electrodes And a second capacitor electrode of the fifth conductive layer which is location, and the first conductive layer, said third conductive layer, and the second capacitor electrode, characterized in that there is a fixed potential.
According to this, the first conductive layer, the third conductive layer, and the second capacitor electrode function as a shield layer, and between the wiring including the gate electrode and the data line between the transistor and the pixel electrode. Electromagnetic shielding properties can be improved.

Application Example 3 In the electro-optical device according to the application example described above, the data line and the first conductive layer are planarly overlapped with each other via a dielectric layer to form an additional capacitor.
According to this, since not only the first conductive layer functions as a shield layer but also functions as one electrode of the additional capacitor, an electro-optical device capable of obtaining a stable operation state can be provided.

Application Example 4 In the electro-optical device according to the application example described above, the fixed potential applied to at least one of the first conductive layer and the second capacitor electrode is an intermediate potential between the maximum potential of the drive signal and the reference potential. Preferably there is.
According to this, compared with the case where the fixed potential is set as the reference potential, the electric withstand voltage when functioning as the storage capacitor or the additional capacitor can be set low. In other words, in order to ensure the withstand voltage in the storage capacitor or the additional capacitor, for example, the dielectric layer sandwiched between the pair of electrodes may not have a high withstand voltage structure.

Application Example 5 In the electro-optical device according to the application example described above, the first conductive layer is an amorphous metal silicide film.
According to this, the amorphous metal silicide film does not need to be heat-treated at a high temperature at the time of film formation, and has both light shielding properties and low reflection properties, so that light incident on the semiconductor layer of the transistor is shielded and leaked. Generation of current and the like can be prevented. That is, it is possible to provide an electro-optical device including a transistor that can obtain a more stable operation state.

Application Example 6 An electronic apparatus according to this application example includes the electro-optical device according to the application example described above.
According to this, an electronic apparatus including an electro-optical device that can obtain a stable operation state can be provided.

(A) is a schematic plan view which shows the structure of a liquid crystal device, (b) is a schematic sectional drawing cut | disconnected by the H-H 'line | wire of (a). FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 2 is a schematic plan view showing the arrangement of pixels in the liquid crystal device of the first embodiment. (A) And (b) is a schematic plan view which shows the structure of the pixel in the liquid crystal device of 1st Embodiment. FIG. 5 is a schematic cross-sectional view illustrating the structure of a pixel cut along line A-A ′ in FIG. 4. The schematic plane which shows planar arrangement | positioning of a 1st conductive layer. Schematic which shows the structure of the projection type display apparatus as an electronic device.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
In the present embodiment, an active matrix liquid crystal device as an electro-optical device including a thin film transistor (TFT) as a pixel switching element will be described as an example. This liquid crystal device can be suitably used as, for example, a light modulation element (liquid crystal light valve) of a projection type display device (liquid crystal projector) described later.

<Liquid crystal device>
First, a liquid crystal device as an electro-optical device according to this embodiment will be described with reference to FIGS. 1 and 2. 1A is a schematic plan view showing the configuration of the liquid crystal device, FIG. 1B is a schematic cross-sectional view taken along line HH ′ of FIG. 1A, and FIG. 2 is an electrical configuration of the liquid crystal device. FIG.

  As shown in FIGS. 1A and 1B, a liquid crystal device 100 according to the present embodiment includes an element substrate 10 and a counter substrate 20 that are disposed to face each other, and a liquid crystal layer 50 that is sandwiched between the pair of substrates. . As the element substrate 10 and the counter substrate 20, a transparent glass substrate such as quartz is used.

  The element substrate 10 is slightly larger than the counter substrate 20, and both substrates are bonded via a seal material 40 arranged in a frame shape, and liquid crystal having positive or negative dielectric anisotropy is sealed in the gap. A liquid crystal layer 50 is formed. For the sealing material 40, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. A spacer (not shown) is mixed in the sealing material 40 to keep the distance between the pair of substrates constant.

  A light shielding film 21 is similarly provided in a frame shape inside the sealing material 40 arranged in a frame shape. The light shielding film 21 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 21 is a display region E having a plurality of pixels P. Although not shown in FIG. 1, the display area E is also provided with a light-shielding portion that divides a plurality of pixels P in a plane.

A data line driving circuit 101 is provided between the element substrate 10 and the sealing material 40 along one side. Further, an inspection circuit 103 is provided inside the sealing material 40 along the other one side facing the one side. Further, a scanning line driving circuit 102 is provided inside the sealing material 40 along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 105 that connect the two scanning line driving circuits 102 are provided inside the sealing material 40 on the other side facing the one side. Wirings connected to the data line driving circuit 101 and the scanning line driving circuit 102 are connected to a plurality of external connection terminals 104 arranged along the one side.
Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.
The arrangement of the inspection circuit 103 is not limited to this, and the inspection circuit 103 may be provided at a position along the inner side of the sealing material 40 between the data line driving circuit 101 and the display area E.

As shown in FIG. 1B, on the surface of the element substrate 10 on the liquid crystal layer 50 side, a light-transmitting pixel electrode 15 provided for each pixel P and a thin film transistor (TFT; Thin Film) as a switching element. Transistor) 30, signal wiring, and an alignment film 18 covering these are formed.
In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The light shielding structure will be described later.

  On the surface of the counter substrate 20 on the liquid crystal layer 50 side, a light shielding film 21, an interlayer film layer 22 formed so as to cover the light shielding film 21, and a common electrode 23 provided so as to cover the interlayer film layer 22 are shared. An alignment film 24 covering the electrode 23 is provided.

  As shown in FIG. 1A, the light shielding film 21 is provided in a frame shape at a position where the data line driving circuit 101, the scanning line driving circuit 102, and the inspection circuit 103 overlap in plan view. Thus, the light incident from the counter substrate 20 side is shielded, and the malfunction of the peripheral circuits including these drive circuits due to the light is prevented. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The interlayer film layer 22 is made of an inorganic material such as silicon oxide, for example, and is provided so as to cover the light shielding film 21 with light transmittance. Examples of a method for forming such an interlayer film layer 22 include a method of forming a film using a plasma CVD method or the like.

  The common electrode 23 is made of, for example, a transparent conductive film such as ITO, and covers the interlayer film layer 22 and, as shown in FIG. 1A, the element substrate 10 side by the vertical conduction parts 106 provided at the four corners of the counter substrate 20. It is electrically connected to the wiring.

  The alignment film 18 covering the pixel electrode 15 and the alignment film 24 covering the common electrode 23 are selected based on the optical design of the liquid crystal device 100. For example, an organic material such as polyimide is formed, and the surface thereof is rubbed so that liquid crystal molecules are subjected to a substantially horizontal alignment treatment, or an inorganic material such as SiOx (silicon oxide) is vapor-phase grown. And a film formed by a method and aligned substantially perpendicularly to liquid crystal molecules.

As shown in FIG. 2, the liquid crystal device 100 is disposed so as to be parallel to the plurality of scanning lines 3 a and the plurality of data lines 6 a as signal lines that are insulated and orthogonal to each other at least in the display region E along the data lines 6 a. Capacitance line 3b.
The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 15, a TFT 30, and a storage capacitor 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitor line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. is doing.

The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the source of the TFT 30. The pixel electrode 15 is electrically connected to the drain of the TFT 30.
The data line 6a is connected to the data line driving circuit 101 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 101 to the pixels P. The scanning line 3a is connected to a scanning line driving circuit 102 (see FIG. 1), and supplies scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 102 to each pixel P. The image signals D1 to Dn supplied from the data line driving circuit 101 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 102 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

In the liquid crystal device 100, the TFT 30 that is a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 15 at a predetermined timing. It is the structure written in. The predetermined level of image signals D1 to Dn written to the liquid crystal layer 50 via the pixel electrode 15 is held for a certain period between the pixel electrode 15 and the common electrode 23 arranged to face each other via the liquid crystal layer 50. The
In order to prevent the held image signals D1 to Dn from leaking, the holding capacitor 16 is connected in parallel with the liquid crystal capacitor formed between the pixel electrode 15 and the common electrode 23. The storage capacitor 16 is provided between the drain of the TFT 30 and the capacitor line 3b. As will be described in detail later, the storage capacitor 16 has a dielectric layer between the light-shielding first capacitor electrode and the second capacitor electrode, and the second capacitor electrode constitutes the capacitor line 3b. is doing. The capacitor line 3b is connected to a fixed potential.
Although not shown in FIG. 2, an additional capacitor 34 (see FIG. 5) having the data line 6a as one electrode is provided. Detailed configurations of the storage capacitor 16 and the additional capacitor 34 will be described later.

  Note that a data line 6a is connected to the inspection circuit 103 shown in FIG. 1A, and an operation defect or the like of the liquid crystal device 100 is confirmed by detecting the image signal in the manufacturing process of the liquid crystal device 100. Although it can be configured, it is omitted in the equivalent circuit of FIG. The inspection circuit 103 includes a sampling circuit that samples the image signal and supplies it to the data line 6a, and a precharge circuit that supplies a precharge signal of a predetermined voltage level to the data line 6a prior to the image signal. Also good.

  Such a liquid crystal device 100 is a transmission type, and adopts an optical design of a normally white mode in which the pixel P is brightly displayed when not driven and a normally black mode in which the pixel P is darkly displayed when not driven. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  Next, the planar arrangement and structure of the pixel P will be described with reference to FIGS. 3 is a schematic plan view showing the arrangement of pixels in the liquid crystal device of the first embodiment, FIGS. 4A and 4B are schematic plan views showing the configuration of pixels in the liquid crystal device of the first embodiment, and FIG. FIG. 6 is a schematic cross-sectional view showing the structure of the pixel cut along the line AA ′ in FIG. 4, and FIG. 6 is a schematic plan view showing the planar arrangement of the first conductive layer.

  As shown in FIG. 3, the pixel P in the liquid crystal device 100 has, for example, a substantially rectangular opening region in a plan view. The opening area is surrounded by a light-shielding non-opening area extending in the X direction and the Y direction and provided in a lattice shape.

  A scanning line 3a shown in FIG. 2 is provided in the non-opening region extending in the X direction. The scanning line 3a uses a light-shielding conductive member, and at least a part of the non-opening region is constituted by the scanning line 3a.

  Similarly, the data line 6a and the capacitor line 3b shown in FIG. 2 are provided in the non-opening region extending in the Y direction. The data line 6a and the capacitor line 3b are also made of a light-shielding conductive member, and at least a part of the non-opening region is constituted by these.

  The non-opening region can be formed not only by the signal lines provided on the element substrate 10 side, but also by the light shielding film 21 patterned in a lattice shape on the counter substrate 20 side.

  Near the intersection of the non-opening regions, the TFT 30 and the storage capacitor 16 shown in FIG. 2 are provided. By providing the TFT 30 in the vicinity of the intersection of the non-opening region having the light shielding property, the optical malfunction of the TFT 30 is prevented and the aperture ratio in the opening region is secured. Although the detailed structure of the pixel P will be described later, the width of the non-opening region in the vicinity of the intersecting portion is wider than that in the other portions because the TFT 30 and the storage capacitor 16 are provided in the vicinity of the intersecting portion.

  As shown in FIG. 4A, the pixel P is provided with a TFT 30 at the intersection of the scanning line 3a and the data line 6a. The TFT 30 is provided between the source region 30s, the drain region 30d, the channel region 30c, the junction region 30e provided between the source region 30s and the channel region 30c, and the channel region 30c and the drain region 30d. The semiconductor layer 30a has an LDD (Lightly Doped Drain) structure having a junction region 30f. The semiconductor layer 30a is disposed so as to pass through the intersection and overlap the scanning line 3a.

  The scanning line 3a has a quadrangular extended portion in a plan view extended in the X and Y directions at the intersection with the data line 6a. A bent gate electrode 30g having an opening that planarly overlaps the extension portion and does not overlap the junction region 30f and the drain region 30d is provided.

  In the gate electrode 30g, the portion extending in the Y direction overlaps the channel region 30c in a plane. Also, the portion that overlaps the channel region 30c is bent in the X direction, and the portions facing each other are electrically scanned by contact holes CNT7 and CNT8 provided between the extended portions of the scanning lines 3a, respectively. It is connected to the line 3a.

  The contact holes CNT7 and CNT8 are rectangular (rectangular) having a long X direction in a plan view, and are provided on both sides so as to sandwich the junction region 30f along the channel region 30c and the junction region 30f of the semiconductor layer 30a. Yes.

  The data line 6a extends in the Y direction, and has the same extended portion that overlaps the scanning line 3a in a plan view. The data line 6a is provided in a portion protruding in the X direction from the extended portion, and is overlapped and joined. The contact holes CNT1 and CNT3 are electrically connected to the source region 30s. A portion including the contact hole CNT1 is a source electrode 31a (see FIG. 5). On the other hand, two contact holes CNT2 and CNT4 that are overlapped and joined also at the end of the drain region 30d are provided, and a portion including the contact hole CNT2 is a drain electrode 31c (see FIG. 5). A contact hole CNT5 is provided adjacent to the contact holes CNT2 and CNT4, and the contact hole CNT4 and the contact hole CNT5 are electrically connected by a relay electrode 6b provided in an island shape. A detailed structure of the contact holes CNT1, CNT2, CNT3, CNT4, and CNT5 will be described later.

  The pixel electrode 15 is provided such that the outer edge overlaps the scanning line 3a and the data line 6a. In this embodiment, the pixel electrode 15 is drain electrode via two contact holes CNT4 and CNT5 provided at the position overlapping the scanning line 3a. It is electrically connected to 31c.

The storage capacitor 16 includes a first capacitor electrode 16b and a second capacitor electrode 16a disposed so as to face the first capacitor electrode 16b. The first capacitor electrode 16b includes a portion that overlaps the extended portion of the scanning line 3a, and a portion that extends from the portion overlapping the extended portion in the extending direction of the scanning line 3a and the extending direction of the data line 6a. And is disposed in the non-opening region (see FIG. 3).
Further, as shown in FIG. 4B, the first capacitor electrode 16b is provided in an island shape independently for each pixel P. The first capacitor electrode 16b of the pixel P and the first capacitor electrode 16b of the adjacent pixel P are arranged so as to surround one pixel P, thereby forming a light-shielding non-opening region.
On the other hand, as shown in FIGS. 4A and 4B, the second capacitor electrode 16a overlaps the first capacitor electrode 16b in a plane and is provided across a plurality of pixels P in the Y direction. A main line portion 16am and a protruding portion 16ap protruding from the main line portion 16am in the X direction. The main line portion 16am and the protruding portion 16ap are provided with substantially the same width as the first capacitor electrode 16b, the data line 6a, and the scanning line 3a. The second capacitor electrode 16a is provided so as to overlap the first capacitor electrode 16b except for a region including the contact hole CNT6 in which the pixel electrode 15 is electrically connected to the first capacitor electrode 16b.

Next, the structure of the pixel P will be described in more detail with reference to FIGS. The liquid crystal device 100 of the present embodiment has five conductive layers between the TFT 30 and the pixel electrode 15 on the element substrate 10. The five conductive layers have a fixed potential every other layer.
Specifically, as shown in FIG. 5, first, the scanning line 3 a is formed on the element substrate 10. The scanning line 3a is, for example, a metal simple substance containing at least one of metals such as Al, Ti, Cr, W, Ta, and Mo, an alloy, a metal silicide, a polysilicide, a nitride, or a laminate of these. It can be used and has light shielding properties.

  A base insulating film 11a made of, for example, silicon oxide is formed so as to cover the scanning line 3a, and a semiconductor layer 30a is formed in an island shape on the base insulating film 11a. The semiconductor layer 30a is made of, for example, a polycrystalline silicon film, and impurity ions are implanted to form an LDD structure having the above-described source region 30s, junction region 30e, channel region 30c, junction region 30f, and drain region 30d.

  A first insulating film (gate insulating film) 11b is formed so as to cover the semiconductor layer 30a. Further, a gate electrode 30g is formed at a position facing the channel region 30c with the first insulating film 11b interposed therebetween.

  A second insulating film 11c is formed so as to cover the gate electrode 30g and the first insulating film 11b, and penetrates the first insulating film 11b and the second insulating film 11c at positions overlapping with respective end portions of the semiconductor layer 30a. Two holes are formed. Then, a conductive film is formed using a light-shielding conductive part material such as Al (aluminum) so as to fill the two holes and cover the second insulating film 11c, and is patterned to form the source region 30s. Connected contact hole CNT1 and source electrode 31a are formed. At the same time, a wiring 31b that overlaps the gate electrode 30g in a plane, a contact hole CNT2, and a drain electrode 31c are formed. That is, the source electrode 31a, the wiring 31b, and the drain electrode 31c are patterned in the same conductive layer. These electrode portions including the wiring 31b are collectively referred to as a first conductive layer 31.

  Note that an amorphous metal silicide film is used as a material for forming the first conductive layer 31 from the viewpoint of blocking light that is incident on the TFT 30 (semiconductor layer 30a) from any direction and reflecting it so as not to generate stray light. preferable. As an amorphous metal silicide film, for example, an a-W-Si (tungsten silicide) film can be cited, and both light shielding properties and low reflectivity can be achieved as compared with a crystallized metal silicide film.

  A third insulating film 11d is formed so as to cover the first conductive layer 31, and two holes penetrating the third insulating film 11d are formed at positions overlapping the source electrode 31a and the drain electrode 31c. A conductive film is formed using a light-shielding conductive material such as Al (aluminum) so as to fill the two holes and cover the third insulating film 11d, and this is patterned to connect to the source electrode 31a. Contact holes CNT3 and data lines 6a are formed. In addition, contact holes CNT4 and relay electrodes 6b connected to the drain electrode 31c are formed. The data line 6a and the relay electrode 6b that are patterned in the same conductive layer are collectively referred to as a second conductive layer 32.

As shown in FIG. 6, in the first conductive layer 31, the wiring 31 b overlaps the data line 6 a in a plan view and is continuous across adjacent pixels P along the extending direction (Y direction) of the data line 6 a. Patterned. As a result, the additional capacitor 34 is formed, in which the data line 6a and the wiring 31b arranged opposite to each other with the third insulating film 11d as the dielectric layer interposed therebetween are paired electrodes.
Further, the source electrode 31a and the drain electrode 31c are patterned in an island shape separately from the wiring 31b. The drain electrode 31c is patterned so as to overlap the relay electrode 6b in a plan view.

  Interlayer insulating film 12 is formed to cover data line 6a and relay electrode 6b and third insulating film 11d. The interlayer insulating film 12 is made of, for example, silicon oxide or nitride, and is subjected to a flattening process for flattening surface irregularities caused by covering the region where the TFT 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating.

  On the interlayer insulating film 12, a third conductive layer 33 patterned so as to overlap the scanning line 3a and the data line 6a in a plane is formed. The third conductive layer 33 is made of a light-shielding conductive member such as Al. In the plan view of FIG. 4A, the third conductive layer 33 is not shown, but is formed in the non-opening region shown in FIG. 3 in plan view.

  An interlayer insulating film 13 a is formed so as to cover the third conductive layer 33 and the interlayer insulating film 12. The interlayer insulating film 13 a is also made of, for example, silicon oxide or nitride, and may be subjected to a planarization process in the same manner as the interlayer insulating film 12.

A hole penetrating the two interlayer insulating films 12 and 13a is formed at a position overlapping the relay electrode 6b, and a light-shielding conductive film is formed so as to fill the hole. The conductive film is patterned to form contact holes CNT5 and first capacitor electrodes 16b connected to the relay electrodes 6b. The conductive layer including the first capacitor electrode 16b is the fourth conductive layer.
As the light-shielding conductive film constituting the fourth conductive layer, a single layer film made of Al (aluminum), TiN (titanium nitride), or a multilayer film in which these layers are stacked can be used.

  Next, a protective film made of, for example, silicon oxide is formed so as to cover the first capacitor electrode 16b and the interlayer insulating film 13a. The protective film is patterned so as to exclude the region where the dielectric layer 16c is formed in the protective film. As a method of patterning by partially removing the protective film, for example, a method of partially dry-etching the formed protective film, or a state in which the surface of the first capacitor electrode 16b to be removed is masked with a resist or the like in advance. There is a lift-off method in which the resist is removed after forming the protective film. As a result, the protective layer 13b that covers the outer edge portion of the first capacitor electrode 16b and covers the surface of the interlayer insulating film 13a is formed.

Next, a dielectric film is formed so as to cover the first capacitor electrode 16b and the protective layer 13b, and the dielectric film is patterned so as to exclude a portion overlapping the contact hole CNT6 connected to the pixel electrode 15 in the dielectric film. Layer 16c is formed. Examples of the dielectric film include a silicon nitride film, a single layer film such as haunium oxide (HfO ₂ ), alumina (Al ₂ O ₃ ), and tantalum oxide (Ta ₂ O ₅ ), or at least two of these single layer films. A multilayer film in which seed single-layer films are stacked may be used. Further, the second capacitor electrode 16a is formed by patterning so as to substantially overlap the dielectric layer 16c. The conductive layer including the second capacitor electrode 16a is the fifth conductive layer. For example, even when the first capacitor electrode 16b (fourth conductive layer) and the second capacitor electrode 16a (fifth conductive layer) are both made of the same material, when the second capacitor electrode 16a is patterned, Since the first capacitor electrode 16b is completely covered with the protective layer 13b and the dielectric layer 16c, the occurrence of problems such as etching of the first capacitor electrode 16b is prevented.

  The storage capacitor 16 includes the light-shielding first capacitor electrode 16b and the second capacitor electrode 16a formed as described above, and a dielectric layer 16c sandwiched between these electrodes.

  An interlayer insulating film 14 is formed so as to cover the storage capacitor 16 and the protective layer 13b. The interlayer insulating film 14 is also made of, for example, silicon oxide or nitride, and may be planarized in the same manner as the interlayer insulating film 13a.

  A hole penetrating the interlayer insulating film 14 is formed at a position overlapping the first capacitor electrode 16b, and a transparent conductive film such as ITO is formed so as to fill the hole. The transparent conductive film is patterned to form a pixel electrode 15 and a contact hole CNT6 that electrically connects the first capacitor electrode 16b and the pixel electrode 15.

  In the storage capacitor 16, as described above, the first capacitor electrode 16b is electrically connected to the drain electrode 31c of the TFT 30 via the contact hole CNT5 and the relay electrode 6b, and electrically connected to the pixel electrode 15 via the contact hole CNT6. Connected to. As described above, the main line portion 16am of the second capacitor electrode 16a is formed so as to straddle a plurality of pixels P in the extending direction (Y direction) of the data line 6a, and also as the capacitor line 3b in the equivalent circuit (see FIG. 2). It is functioning. Thereby, the potential applied to the pixel electrode 15 via the drain electrode 31c of the TFT 30 can be held between the first capacitor electrode 16b and the second capacitor electrode 16a.

  In such a wiring structure of the element substrate 10, a fixed potential is applied to the wiring 31b of the first conductive layer 31, the third conductive layer 33, and the second capacitor electrode 16a as the fifth conductive layer. As the fixed potential, an intermediate potential between the driving voltage Vdd and the reference potential Vss in the liquid crystal device 100 is given. For example, the drive voltage Vdd has a maximum potential of 15.5 v, a reference potential Vss of 0 v, and an intermediate potential of 7 v.

  As a method for connecting the wiring 31b, the third conductive layer 33, and the second capacitor electrode 16a of the first conductive layer 31 to the fixed potential, for example, the respective conductive layers are displayed in the display region shown in FIG. A method of drawing out to a peripheral region outside E and connecting to the wiring for supplying the fixed potential can be given.

The effect of the said embodiment is as follows.
(1) According to the wiring structure of the element substrate 10 of the above-described embodiment, the wiring 31b of the first conductive layer 31, the third conductive layer 33, which are arranged every other layer between the TFT 30 and the pixel electrode 15, Since a fixed potential is applied to the second capacitor electrode 16a as the fifth conductive layer, the electromagnetic wave shielding property between the wirings including between the gate electrode 30g and the data line 6a is improved. Therefore, stable operation of the TFT 30 is realized, and phenomena such as crosstalk due to unstable operation are reduced. That is, the liquid crystal device 100 as an electro-optical device having excellent display quality can be realized.
(2) Further, since the given fixed potential is an intermediate potential, the applied voltage applied to the storage capacitor 16 and the additional capacitor 34 can be reduced as compared with the case where the fixed potential is set to the reference potential Vss. Therefore, the withstand voltage in the storage capacitor 16 and the additional capacitor 34 can be small. In other words, the storage capacitor 16 and the additional capacitor 34 that are not easily destroyed by the applied voltage can be obtained.
(3) Further, the additional capacitor 34 that can secure a relatively large electric capacity is configured by using the data line 6a extending in the same direction (Y direction) and the wiring 31b of the first conductive layer 31 as a pair of electrodes. Has been. Therefore, as described above, the image signal supplied to the data line 6a is not easily affected by electromagnetic waves, and the potential of the data line 6a, that is, the potential of the image signal is stabilized.

(Second Embodiment)
<Electronic equipment>
FIG. 7 is a schematic diagram illustrating a configuration of a projection display device as an electronic apparatus. As shown in FIG. 7, a projection display apparatus 1000 as an electronic apparatus according to the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 as light separation elements. Three reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a light combining element As a cross dichroic prism 1206 and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205.
Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204.
The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection type display device 1000, the liquid crystal device 100 having a stable operation quality is provided, and the liquid crystal light valves 1210, 1220, and 1230 are irradiated with strong (bright) light from the lamp unit 1101 as a light source. Even so, high display quality is realized.

  Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

  (Modification 1) The planar arrangement of the first conductive layer 31 in the liquid crystal device 100 is not limited to this. For example, as in the non-opening region shown in FIG. 3, the first conductive layer 31 is provided in a so-called lattice pattern, which is continuous in the X direction along the scanning line 3a and the Y direction along the data line 6a. Also good. According to this, compared with the case where it continues to any one of a X direction or a Y direction, the electrical resistance of the 1st conductive layer 31 falls and the effect of an electromagnetic wave shield can be improved more. The patterning is performed except for a portion overlapping the contact hole for connecting the semiconductor layer 30a located below the first conductive layer 31 and the wiring located above.

  (Modification 2) In the conductive layer on the element substrate 10, the fixed potentials applied to every other conductive layer are not limited to the same fixed potential. For example, the intermediate potential is applied as a fixed potential to the wiring 31b and the second capacitor electrode 16a of the first conductive layer 31 related to the storage capacitor 16 and the additional capacitor 34, as described above. A reference potential Vss or a GND potential may be applied to the third conductive layer 33 that is not present.

  (Modification 3) The arrangement of the semiconductor layer 30a in the liquid crystal device 100 is not limited to this. For example, even if the semiconductor layer 30a is disposed in the direction along the data line 6a at the intersection of the scanning line 3a and the data line 6a, the wiring structure of the present invention can be applied.

  (Modification 4) The number of conductive layers between the TFT 30 and the pixel electrode 15 in the liquid crystal device 100 is not limited to five. It is good also as a structure of 6 layers or more.

  (Modification 5) The liquid crystal device 100 is not limited to the transmission type. The present invention can be applied even if the pixel electrode 15 is a reflective liquid crystal device having light reflectivity.

  (Modification 6) The electronic apparatus to which the liquid crystal device 100 is applied is not limited to the projection display device 1000 of the above embodiment. For example, a projection-type HUD (head-up display), a direct-view HMD (head-mounted display), an electronic book, a personal computer, a digital still camera, an LCD TV, a viewfinder-type or monitor-direct-view video recorder, car navigation It can be suitably used as a display unit of an information terminal device such as a system, electronic notebook, or POS.

  (Modification 7) The electro-optical device to which the wiring structure of the element substrate 10 can be applied is not limited to the liquid crystal device 100. For example, it is an active drive type electro-optical device including a transistor, and can be applied to a display device such as an organic EL (Electro Luminessence) device or an electrophoresis device.

  3a ... scanning line, 6a ... data line, 10 ... element substrate as substrate, 11b ... first insulating film as gate insulating film, 15 ... pixel electrode, 16a ... fifth conductive layer and second capacitor electrode, 16b ... first 4 conductive layers and first capacitor electrode, 16c: dielectric layer, 30 ... TFT as transistor, 30a ... semiconductor layer, 30g ... gate electrode, 31 ... first conductive layer, 32 ... second conductive layer, 33 ... third Conductive layer, 34... Additional capacitance, 100... Liquid crystal device as an electro-optical device, 1000... Projection type display device as electronic equipment.

Claims (6)

A pixel electrode;
Data lines,
A transistor provided corresponding to the pixel electrode and electrically connected to the data line;
A storage capacitor electrically connected to the transistor and the pixel electrode;
A conductive layer provided between the transistor and the pixel electrode and including the data line and the storage capacitor; and
The electro-optical device, wherein the at least five conductive layers have a fixed potential every other layer. The transistor includes a semiconductor layer, and a gate electrode disposed on the semiconductor layer via an insulating film,
The at least five conductive layers include a first conductive layer disposed between the gate electrode and the pixel electrode so as to planarly overlap the gate electrode, and the first conductive layer and the pixel electrode. A second conductive layer including the data line disposed between the first conductive layer and the first conductive layer; and a second conductive layer between the second conductive layer and the pixel electrode. And a first capacitor electrode as a fourth conductive layer disposed so as to overlap the third conductive layer in a plane between the third conductive layer and the pixel electrode. A second capacitor electrode as a fifth conductive layer disposed opposite to the first capacitor electrode via a dielectric layer between the first capacitor electrode and the pixel electrode;
The electro-optical device according to claim 1, wherein the first conductive layer, the third conductive layer, and the second capacitor electrode are set to a fixed potential.   3. The electro-optical device according to claim 2, wherein the data line and the first conductive layer overlap each other in a planar manner via a dielectric layer to form an additional capacitor.   The fixed potential applied to at least one of the first conductive layer and the second capacitor electrode is an intermediate potential between a maximum potential of a drive signal and a reference potential. Electro-optic device.   The electro-optical device according to claim 1, wherein the first conductive layer is an amorphous metal silicide film.   An electronic apparatus comprising the electro-optical device according to claim 1.

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