JP2012252033A - Electro-optical device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device on which a contact hole of a pixel electrode is disposed without reducing the aperture ratio of pixels, and further to provide an electronic apparatus provided with the electro-optical device.SOLUTION: A liquid crystal device in one embodiment comprises: a pixel electrode 15; a thin film transistor, TFT, 30 disposed corresponding to the pixel electrode 15; a second capacitor electrode 16b disposed between the TFT 30 and the pixel electrode 15 so as to cover a semiconductor layer 30a of the TFT 30 as light-shielding first capacitance wiring; and a relay electrode 9 electrically connected to the pixel electrode 15 through a contact hole CNT 8 between second capacitance wiring 71 and the pixel electrode 15. The second capacitor electrode 16b as the first capacitance wiring has an overhanging portion 16ba that overhangs a corner portion of an aperture of a pixel with respect to the pixel electrode 15, and the contact hole CNT 8 is formed so as to be overlapped with the overhanging portion 16ba.

Description

  The present invention relates to an electro-optical device and an electronic apparatus including the same.

  As an electro-optical device, an active drive type liquid crystal device is known as a light valve that performs gradation control of light emitted from a light source of a projection display device (projector) based on display information. In such a liquid crystal device, the diagonal length is about 1 inch, and it is important to improve the aperture ratio of the pixel while improving the light shielding property to the transistor that controls the switching of the pixel electrode. ing.

  In order to improve the above-mentioned problem, for example, in Patent Document 1, a light shielding portion provided on a substrate so as to cover a semiconductor layer of a transistor, and a light shielding portion that overlaps with the light shielding portion, are provided below the pixel electrode. And a first conductive film formed on the upper layer side of the semiconductor layer, and a contact hole formed on the upper layer side of the first conductive film through the interlayer insulating film and opened in the interlayer insulating film. A second conductive film electrically connected to the first conductive film, and the light-shielding portion has a protruding portion protruding at a corner of an opening region of each pixel corresponding to the pixel electrode, An electro-optical device is disclosed in which the contact hole is at least partially overlapped with the protruding portion when viewed in plan on the substrate.

Patent Document 1 discloses an example in which the light shielding portion includes a lower capacitor electrode and an upper capacitor electrode, and one of the capacitor electrodes is a capacitor element electrically connected to the pixel electrode. At that time, the first conductive film is formed as one of the capacitor electrodes and is electrically connected to the semiconductor layer, and the second conductive film is electrically connected to the pixel electrode. Yes.
That is, the first and second conductive films function as a relay layer that electrically connects the semiconductor layer and the pixel electrode.

JP 2009-63994 A

The wiring structure on the substrate in the electro-optical device of Patent Document 1 is shown as an example of five layers or six layers, such as a data line or a capacitor line between the second conductive film and the uppermost pixel electrode. It has another relay layer formed simultaneously with the formation of the wiring.
Another contact hole for electrically connecting the other relay layer and the pixel electrode is still necessary, and the other contact hole is also arranged so as to overlap the light shielding portion in a plan view.
However, in consideration of the aperture ratio of the pixel, it is difficult to secure a space for providing the other contact hole, and there is a possibility that an electrical short circuit occurs because the space is arranged close to the wiring such as the data line or the capacitor line.
In addition, if the other contact hole is arranged apart from the data line or the capacitor line, the distance from the outer edge of the light-shielding portion is shortened, resulting in unevenness of the other contact hole. There is a problem that it becomes difficult to sufficiently block light leakage by the light blocking portion.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example covers a pixel electrode, a transistor provided corresponding to the pixel electrode, and a semiconductor layer of the transistor between the transistor and the pixel electrode. And a relay electrode electrically connected to the pixel electrode through a contact hole between the capacitor line and the pixel electrode, and the capacitor line includes: It has a projecting portion that projects at the corner of the opening of the pixel with respect to the pixel electrode, and the contact hole is formed so as to overlap the projecting portion.

According to this configuration, the relay electrode is provided between the capacitor wiring and the pixel electrode, and the contact hole in which the relay electrode and the pixel electrode are electrically connected is formed so as to overlap the protruding portion of the capacitor wiring. An electrical short circuit between the capacitor wiring and the contact hole is prevented. In addition, since it is not necessary to consider a short circuit with the capacitor wiring, the contact hole can be arranged on the inner side of the protruding portion of the capacitor wiring, and light leakage caused by the contact hole has a light shielding property. Light can be reliably shielded by the overhanging portion.
That is, it is possible to provide an electro-optical device having a contact hole of a pixel electrode in which an electrical short circuit with other wiring is prevented without reducing the aperture ratio of the pixel.

Application Example 2 In the electro-optical device according to the application example, the capacitor wiring is provided in a layer above the first capacitor wiring on the substrate, the first capacitor wiring having the protruding portion, and the first capacitor wiring. And the relay electrode is provided between the second capacitor line and the pixel electrode.
According to this configuration, the capacitor wiring is composed of the first capacitor wiring and the second capacitor wiring provided in different wiring layers, and the electrical resistance as the capacitor wiring can be reduced. Furthermore, a short circuit between the contact hole connecting the pixel electrode and the relay electrode and the second capacitor wiring is prevented.

Application Example 3 In the electro-optical device according to the application example described above, a storage capacitor electrically connected to the pixel electrode is included, and one of the pair of capacitor electrodes in the storage capacitor is the first capacitor. It is characterized by constituting wiring.
According to this configuration, it is possible to provide the first capacitor wiring in the same layer as one of the capacitor electrodes on the substrate. Compared to the case where the first capacitor wiring is provided in a layer different from the one of the capacitor electrodes, The wiring structure in can be simplified.

Application Example 4 In the electro-optical device according to the application example described above, the scanning electrode and the data line that are electrically connected to the transistor and intersect each other are provided, the relay electrode has a light shielding property, and the scanning line and the data line It is preferable to have a protruding portion that overlaps the intersection with the data line and protrudes in the extending direction of the scanning line and the extending direction of the data line.
According to this configuration, the pixel electrode is provided in a region partitioned by the scanning line and the data line intersecting each other, and the side of the pixel electrode can be shielded by the light-shielding relay electrode. It is possible to make the flickering of the pixel caused by the image conspicuous.

Application Example 5 In the electro-optical device according to the application example described above, it is preferable that the contact hole of the pixel electrode is larger in plan than the contact hole on the semiconductor layer side with respect to the relay electrode.
According to this configuration, the pixel electrode formed using the transparent conductive film has a higher electrical resistance than other wirings, so the size of the contact hole connected to the pixel electrode is larger than that of other contact holes. Therefore, the relay electrode and the pixel electrode can be stably connected.

Application Example 6 An electronic apparatus according to this application example includes the electro-optical device according to the application example described above.
According to this configuration, it is possible to provide an electronic apparatus including an electro-optical device that secures an aperture ratio in a pixel and obtains a bright display.

(A) is a schematic plan view which shows the structure of a liquid crystal device, (b) is a schematic sectional drawing cut | disconnected by the H-H 'line | wire of (a). FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic plan view showing the arrangement of pixels in a liquid crystal device. FIG. 3 is a schematic plan view showing the arrangement of thin film transistors and signal lines in a pixel of a liquid crystal device. (A) And (b) is a schematic plan view which shows arrangement | positioning of a pixel electrode, a capacitance electrode, a relay electrode, and each contact hole. FIG. 6 is a schematic cross-sectional view illustrating the structure of a pixel cut along the line A-A ′ in FIGS. 4 and 5A. Schematic which shows the structure of the projection type display apparatus as an electronic device. The schematic plan view which shows the relay electrode of a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In the present embodiment, an active drive type liquid crystal device as an electro-optical device including a thin film transistor (TFT) as a pixel switching element will be described as an example. This liquid crystal device can be suitably used as, for example, a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

<Liquid crystal device>
A liquid crystal device as an electro-optical device of this embodiment will be described with reference to FIGS. 1 and 2. 1A is a schematic plan view showing the configuration of the liquid crystal device, FIG. 1B is a schematic cross-sectional view taken along line HH ′ of FIG. 1A, and FIG. 2 is an electrical configuration of the liquid crystal device. FIG.

  As shown in FIGS. 1A and 1B, a liquid crystal device 100 according to the present embodiment includes an element substrate 10 and a counter substrate 20 that are disposed to face each other, and a liquid crystal layer 50 that is sandwiched between the pair of substrates. . As the element substrate 10 and the counter substrate 20, a transparent substrate such as a quartz substrate or a glass substrate is used.

  The element substrate 10 is slightly larger than the counter substrate 20, and both substrates are bonded via a seal material 40 arranged in a frame shape, and liquid crystal having positive or negative dielectric anisotropy is sealed in the gap. A liquid crystal layer 50 is formed. For the sealing material 40, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. A spacer (not shown) is mixed in the sealing material 40 to keep the distance between the pair of substrates constant.

  A light shielding film 21 is similarly provided in a frame shape inside the sealing material 40 arranged in a frame shape. The light shielding film 21 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 21 is a display region E having a plurality of pixels P. Although not shown in FIG. 1, the display area E is also provided with a light-shielding portion that divides a plurality of pixels P in a plane.

A data line driving circuit 101 is provided between the element substrate 10 and the sealing material 40 along one side. Further, an inspection circuit 103 is provided inside the sealing material 40 along the other one side facing the one side. Further, a scanning line driving circuit 102 is provided inside the sealing material 40 along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 105 that connect the two scanning line driving circuits 102 are provided inside the sealing material 40 on the other side facing the one side. Wirings connected to the data line driving circuit 101 and the scanning line driving circuit 102 are connected to a plurality of external connection terminals 104 arranged along the one side.
Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.
The arrangement of the inspection circuit 103 is not limited to this, and the inspection circuit 103 may be provided at a position along the inner side of the sealing material 40 between the data line driving circuit 101 and the display area E.

As shown in FIG. 1B, on the surface of the element substrate 10 on the liquid crystal layer 50 side, a light-transmitting pixel electrode 15 provided for each pixel P and a thin film transistor (TFT; Thin Film) as a switching element. Transistor) 30, signal wiring, and an alignment film 18 covering these are formed.
In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The light shielding structure will be described later.

  On the surface of the counter substrate 20 on the liquid crystal layer 50 side, a light shielding film 21, an interlayer insulating film 22 formed so as to cover the light shielding film 21, and a common electrode 23 provided so as to cover the interlayer insulating film 22, An alignment film 24 covering the electrode 23 is provided.

  As shown in FIG. 1A, the light shielding film 21 is provided in a frame shape at a position where the data line driving circuit 101, the scanning line driving circuit 102, and the inspection circuit 103 overlap in plan view. Thus, the light incident from the counter substrate 20 side is shielded, and the malfunction of the peripheral circuits including these drive circuits due to the light is prevented. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The interlayer insulating film 22 is made of an inorganic material such as silicon oxide, for example, and is provided so as to cover the light shielding film 21 with light transmittance. The interlayer insulating film 22 also functions as a planarizing layer, and is formed so that the surface of the common electrode 23 that covers the interlayer insulating film 22 facing the liquid crystal layer 50 is flat. As a method for forming the interlayer insulating film 22, for example, a method of forming a film using a plasma CVD method or the like can be given.

  The common electrode 23 is made of, for example, a transparent conductive film such as ITO, covers the interlayer insulating film 22, and, as shown in FIG. 1A, the element substrate 10 side by the vertical conduction portions 106 provided at the four corners of the counter substrate 20. It is electrically connected to the wiring.

  The alignment film 18 covering the pixel electrode 15 and the alignment film 24 covering the common electrode 23 are selected based on the optical design of the liquid crystal device 100. For example, an organic material such as polyimide is formed, and the surface thereof is rubbed so that liquid crystal molecules are subjected to a substantially horizontal alignment treatment, or an inorganic material such as SiOx (silicon oxide) is vapor-phase grown. And a film formed by a method and aligned substantially perpendicularly to liquid crystal molecules.

As shown in FIG. 2, the liquid crystal device 100 is parallel to the plurality of scanning lines 3 and the plurality of data lines 6 as signal lines that are insulated and orthogonal to each other at least in the display region E, along the data lines 6. The capacitor wiring 7 is disposed.
The direction in which the scanning line 3 extends is the X direction, and the direction in which the data line 6 extends is the Y direction.

  The scanning line 3, the data line 6 and the capacitor wiring 7, and the pixel electrode 15, the TFT 30, and the storage capacitor 16 are provided in a region divided by these wirings, and these constitute a pixel circuit of the pixel P. Yes.

The scanning line 3 is electrically connected to the gate of the TFT 30, and the data line 6 is electrically connected to the source of the TFT 30. The pixel electrode 15 is electrically connected to the drain of the TFT 30.
The data line 6 is connected to the data line driving circuit 101 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 101 to the pixels P. The scanning line 3 is connected to a scanning line driving circuit 102 (see FIG. 1), and supplies scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 102 to each pixel P. The image signals D1 to Dn supplied from the data line driving circuit 101 to the data lines 6 may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6 for each group. Good. The scanning line driving circuit 102 supplies the scanning signals SC <b> 1 to SCm to the scanning line 3 in a pulse-sequential manner at a predetermined timing.

In the liquid crystal device 100, the TFT 30 which is a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6 are supplied to the pixel electrode 15 at a predetermined timing. It is the structure written in. The predetermined level of image signals D1 to Dn written to the liquid crystal layer 50 via the pixel electrode 15 is held for a certain period between the pixel electrode 15 and the common electrode 23 arranged to face each other via the liquid crystal layer 50. The
In order to prevent the held image signals D1 to Dn from leaking, the holding capacitor 16 is connected in parallel with the liquid crystal capacitor formed between the pixel electrode 15 and the common electrode 23. The storage capacitor 16 is provided between the drain of the TFT 30 and the capacitor wiring 7. Although details will be described later, on the element substrate 10, the capacitor wiring 7 is provided in a layer different from the first capacitor wiring and the first capacitor wiring and is electrically connected to the first capacitor wiring. The first capacitor wiring is configured by one capacitor electrode of the pair of capacitor electrodes constituting the storage capacitor 16. Further, the capacitor wiring 7 is connected to a fixed potential.

  Note that the data line 6 is electrically connected to the inspection circuit 103 illustrated in FIG. 1A, and an operation defect of the liquid crystal device 100 is detected by detecting the image signal in the manufacturing process of the liquid crystal device 100. However, it is omitted in the equivalent circuit of FIG. The inspection circuit 103 includes a sampling circuit that samples the image signal and supplies it to the data line 6, and a precharge circuit that supplies a precharge signal of a predetermined voltage level to the data line 6 prior to the image signal. Also good.

  Such a liquid crystal device 100 is a transmission type, and adopts an optical design of a normally white mode in which the pixel P is brightly displayed when not driven and a normally black mode in which the pixel P is darkly displayed when not driven. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  Next, the planar arrangement and structure of the pixel P will be described with reference to FIGS. 3 is a schematic plan view showing the arrangement of pixels in the liquid crystal device, FIG. 4 is a schematic plan view showing the arrangement of thin film transistors and signal lines in the pixels of the liquid crystal device, and FIGS. 5A and 5B are pixel electrodes and capacitors. FIG. 6 is a schematic cross-sectional view showing the structure of the pixel cut along the line AA ′ in FIGS. 4 and 5A.

  As shown in FIG. 3, the pixel P in the liquid crystal device 100 has, for example, a substantially rectangular opening region in a plan view. The opening area is surrounded by a light-shielding non-opening area extending in the X direction and the Y direction and provided in a lattice shape.

  A scanning line 3 shown in FIG. 2 is provided in the non-opening region extending in the X direction. The scanning line 3 uses a light-shielding conductive member, and the scanning line 3 constitutes at least a part of the non-opening region.

  Similarly, the data line 6 and the capacitor wiring 7 shown in FIG. 2 are provided in the non-opening region extending in the Y direction. The data line 6 and the capacitor wiring 7 are also made of a light-shielding conductive member, and at least a part of the non-opening region is constituted by these.

  The non-opening region can be formed not only by the signal lines provided on the element substrate 10 side, but also by the light shielding film 21 patterned in a lattice shape on the counter substrate 20 side.

  Near the intersection of the non-opening regions, the TFT 30 and the storage capacitor 16 shown in FIG. 2 are provided. By providing the TFT 30 in the vicinity of the intersection of the non-opening region having the light shielding property, the optical malfunction of the TFT 30 is prevented and the aperture ratio in the opening region is secured. Although the detailed structure of the pixel P will be described later, the width of the non-opening region in the vicinity of the intersecting portion is wider than that in the other portions because the TFT 30 and the storage capacitor 16 are provided in the vicinity of the intersecting portion.

Next, components such as a thin film transistor in the pixel circuit of the pixel P will be described with reference to FIGS.
As shown in FIG. 4, the pixel P has a TFT 30 provided at the intersection of the scanning line 3 and the data line 6. The TFT 30 is provided between the source region 30s, the drain region 30d, the channel region 30c, the junction region 30e provided between the source region 30s and the channel region 30c, and the channel region 30c and the drain region 30d. The semiconductor layer 30a has an LDD (Lightly Doped Drain) structure having a junction region 30f. The semiconductor layer 30 a is disposed so as to pass through the intersection and overlap the scanning line 3.

  The scanning line 3 has a quadrangular extended portion 3 a in a plan view extended in the X and Y directions at the intersection with the data line 6. A bent gate electrode 30g having an opening that overlaps the extension portion 3a in a plan view and that does not overlap the junction region 30f and the drain region 30d is provided.

  In the gate electrode 30g, the portion extending in the Y direction overlaps the channel region 30c in a plane. Further, the scanning line 3 is bent by contact holes CNT1 and CNT2 which are bent from the portion overlapping the channel region 30c and extend in the X direction, and the portions facing each other are provided between the extended portions 3a of the scanning line 3, respectively. And is electrically connected.

  The contact holes CNT1 and CNT2 are rectangular (rectangular) having a long X direction in a plan view, and are provided on both sides so as to sandwich the junction region 30f along the channel region 30c and the junction region 30f of the semiconductor layer 30a. Yes.

  The data line 6 extends in the Y direction, and also has a rectangular extension 6a at the intersection with the scanning line 3, and is a contact hole provided in a protrusion 6b protruding from the extension 6a in the X direction. The CNT3 is electrically connected to the source region 30s. A portion including the contact hole CNT3 serves as a source electrode. On the other hand, a contact hole CNT4 is also provided at the end of the drain region 30d, and a portion including the contact hole CNT4 serves as a drain electrode. A contact hole CNT5 is provided adjacent to the contact hole CNT4, and the contact hole CNT5 is electrically connected to a relay electrode 6c provided in an island shape.

  As shown in FIG. 5A, the storage capacitor 16 has a first capacitor electrode 16a and a second capacitor electrode 16b as a pair of capacitor electrodes. The first capacitor electrode 16 a is provided for each pixel P and is disposed so as to overlap the intersection of the scanning line 3 and the data line 6. Moreover, it has the protrusion part 16ab which protruded in X direction along the scanning line 3 from main-body part 16aa overlapped with this crossing part. That is, the first capacitor electrode 16a has a main body portion 16aa and a protruding portion 16ab, and has a substantially rectangular island shape.

  On the other hand, the second capacitor electrode 16b is provided so as to overlap the main line portion 16bc extending in the Y direction across the plurality of pixels P and the main body portion 16aa of the first capacitor electrode 16a. 3) and a protruding portion 16bb protruding from the protruding portion 16ba and provided so as to overlap the protruding portion 16ab of the first capacitor electrode 16a.

  The overhanging portion 16ba of the second capacitor electrode 16b is also formed so as to overlap the above-described intersection between the scanning line 3 and the data line 6 and has a quadrangular shape.

  The protruding portion 16ab of the first capacitor electrode 16a protrudes in the X direction to a position overlapping the contact hole CNT5 described above, and the contact hole CNT4 and the contact hole CNT5 described above and the contact hole disposed next to the contact hole CNT5. It is electrically connected to CNT6.

  The protrusion 16bb of the second capacitor electrode 16b has a shorter length in the X direction than the protrusion 16ab of the first capacitor electrode 16a, and extends to the front of the contact hole CNT5. As described above, the second capacitor electrode 16b extends in the Y direction across the plurality of pixels P, and functions as the first capacitor wiring of the capacitor wiring 7 described above. Therefore, it is connected to a fixed potential and, of course, is not electrically connected to contact holes CNT4 and CNT5 to which the first capacitor electrode 16a is electrically connected, and contact holes CNT7 and CNT8 described later. .

  The contact hole CNT8 that is electrically connected to the pixel electrode 15 overlaps with the projecting portion 16ba of the second capacitor electrode 16b that projects to the corner of the opening of the pixel P, and is provided at a position separated from the outer edge of the projecting portion 16ba. Yes. Moreover, it is larger than other contact holes CNT5, CNT6 and CNT7 in plan view.

  FIG. 5A shows the arrangement of the capacitor electrodes in the storage capacitor provided in the upper layer of the thin film transistor shown in FIG. FIG. 5B shows a planar arrangement of the relay electrode, the second capacitor wiring, the pixel electrode, and each contact hole provided in the upper layer of the storage capacitor.

  As shown in FIG. 5B, the second capacitor wiring 71 is provided to extend in the Y direction across the plurality of pixels P similarly to the second capacitor electrode 16b, and the scanning line 3 and the data line described above. 6 has an extended portion 71a extended to the left in the drawing in the X direction. The second capacitor wiring 71 is also connected to a fixed potential. The second capacitor electrode 16b functioning as the first capacitor line and the second capacitor line 71 are, for example, drawn out to a peripheral region outside the display region E shown in FIG. 1 and electrically connected via a contact hole (not shown). Connected to.

  In addition, an island-shaped (quadrangle in plan view) relay electrode 71b is provided at a position spaced apart from the second capacitor wiring 71 in the X direction and overlapping the contact hole CNT6 and the contact hole CNT7. Further, a relay electrode 9 is provided that overlaps the overhanging portion 16ba of the second capacitor electrode 16b and is electrically connected to the contact hole CNT7 and the contact hole CNT8.

  An L-shaped relay electrode 9 (shown by hatching in FIG. 5B) having a protruding portion 9a protruding in the X direction is one example of the relay electrode in the present invention, and includes the first capacitor electrode 16a and the Similar to the second capacitor electrode 16 b, that is, the storage capacitor 16, it is provided in the non-opening region.

  Next, the wiring structure on the element substrate 10 will be described in more detail with reference to FIG. FIG. 6 is a schematic cross-sectional view showing a wiring structure along the line A-A ′ in FIGS. 4 and 5A.

  As shown in FIG. 6, the scanning line 3 is first formed on the element substrate 10. The scanning line 3 also serves as a light-shielding film that shields the semiconductor layer 30a. For example, the scanning line 3 includes a simple metal, an alloy, a metal silicide, a poly, including at least one of metals such as Al, Ti, Cr, W, Ta, and Mo. Silicide, nitride, or a laminate of these can be used and has light shielding properties.

  A base insulating film 11a made of, for example, silicon oxide is formed so as to cover the scanning lines 3, and a semiconductor layer 30a is formed in an island shape on the base insulating film 11a. The semiconductor layer 30a is made of, for example, a polycrystalline silicon film, and impurity ions are implanted to form an LDD structure having the above-described source region 30s, junction region 30e, channel region 30c, junction region 30f, and drain region 30d.

  A first insulating film (gate insulating film) 11b made of, for example, silicon oxide is formed so as to cover the semiconductor layer 30a. Further, a gate electrode 30g is formed at a position facing the channel region 30c with the first insulating film 11b interposed therebetween. The gate electrode 30g can be formed using, for example, a polycrystalline silicon film, and at the same time, the scanning line 3 (expansion portion 3a) and the gate electrode 30g are electrically connected through the base insulating film 11a and the first insulating film 11b. A contact hole CNT1 connected to is formed. Although not shown in FIG. 6, a contact hole CNT2 (see FIG. 4) is also formed at the same time.

  A second insulating film 11c made of, for example, silicon oxide is formed so as to cover the gate electrode 30g and the first insulating film 11b. A contact hole CNT4 penetrating the first insulating film 11b and the second insulating film 11c overlapping the drain region 30d of the semiconductor layer 30a is formed. Subsequently, a conductive film made of a light-shielding metal such as Al is formed and patterned so as to cover the second insulating film 11c, thereby being electrically connected to the drain region 30d through the contact hole CNT4. A first capacitor electrode 16a is formed.

  A third insulating film 11d made of, for example, silicon oxide is formed or patterned so as to exclude the portion of the first capacitor electrode 16a facing the second capacitor electrode 16b and the portion where the contact hole CNT5 is formed. Is done.

A dielectric layer 16c is formed on at least a portion of the first capacitor electrode 16a facing the second capacitor electrode 16b. As the dielectric layer 16c, a silicon nitride film, a single-layer film such as haunium oxide (HfO ₂ ), alumina (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), or at least one of these single-layer films is used. A multilayer film in which two types of single-layer films are stacked may be used. The thickness is set to 20 nm to 30 nm in consideration of electric capacity.

  By forming and patterning a conductive film made of a light-shielding metal nitride such as TiN so as to cover the dielectric layer 16c, the second capacitor electrode 16b functioning as the first capacitor wiring is formed. The second capacitor electrode 16b is formed so as to cover the entire patterned dielectric layer 16c. When the second capacitor electrode 16b is patterned through the thin dielectric layer 16c having a thickness of 20 nm to 30 nm by making it different from the conductive film constituting the first capacitor electrode 16a, the first capacitor electrode previously formed Problems such as etching of 16a can be prevented. Further, since the metal nitride such as TiN is excellent in corrosion resistance and wear resistance, it is possible to prevent the second capacitor electrode 16b from being damaged, that is, the storage capacitor 16 from being electrically damaged in the subsequent steps. it can.

A fourth insulating film 11e made of, for example, silicon oxide is formed so as to cover the second capacitor electrode 16b. A contact hole CNT3 that penetrates the first insulating film 11b to the fourth insulating film 11e at a position that overlaps the source region 30s of the semiconductor layer 30a, and a third insulating film 11d and a second one that overlap with the protruding portion 16ab of the first capacitor electrode 16a. A contact hole CNT5 penetrating the 4 insulating film 11e is formed.
A conductive film made of a light-shielding metal such as Al is formed to cover the fourth insulating film 11e so as to fill the contact holes CNT3 and CNT5. By patterning the conductive film, the contact hole CNT3 is formed in the source region 30s. A data line 6 (including the extended portion 6a and the protruding portion 6b) that is electrically connected to the first capacitor electrode 16a and a relay electrode 6c that is electrically connected to the first capacitor electrode 16a via the contact hole CNT5 are formed. .

  Interlayer insulating film 12 is formed so as to cover data line 6 and relay electrode 6c. The interlayer insulating film 12 is made of, for example, silicon oxide or nitride, and is subjected to a flattening process for flattening surface irregularities caused by covering the region where the TFT 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating.

  A contact hole CNT6 penetrating through the interlayer insulating film 12 is formed at a position overlapping the relay electrode 6c. A conductive film made of a light-shielding metal such as Al is formed so as to cover the contact hole CNT6 and the interlayer insulating film 12, and by patterning the conductive film, the second capacitor wiring 71 (the extended portion 71a is formed). The relay electrode 71b is formed.

  Next, the interlayer insulating film 13 that covers the second capacitor wiring 71 and the relay electrode 71b is formed. The interlayer insulating film 13 is also made of, for example, silicon oxide or nitride, and may be planarized in the same manner as the interlayer insulating film 12.

  A contact hole CNT7 penetrating the interlayer insulating film 13 is formed at a position overlapping the relay electrode 71b. A conductive film made of a light-shielding metal such as Al is formed so as to cover the contact hole CNT7 and cover the interlayer insulating film 13, and the relay electrode 9 (including the protruding portion 9a) is formed by patterning the conductive film. Is formed.

  Next, an interlayer insulating film 14 that covers the relay electrode 9 is formed. The interlayer insulating film 14 is also made of, for example, silicon oxide or nitride, and may be planarized in the same manner as the interlayer insulating film 12.

  A contact hole CNT8 penetrating through the interlayer insulating film 14 is formed at a position overlapping the relay electrode 9. A transparent conductive film such as ITO is formed so as to cover the contact hole CNT8 and cover the interlayer insulating film 14, and is electrically connected to the relay electrode 9 via the contact hole CNT8 by patterning the transparent conductive film. A pixel electrode 15 is formed.

  According to such a wiring structure of the element substrate 10, the drain region 30d of the TFT 30 is electrically connected to the first capacitor electrode 16a of the storage capacitor 16 through the contact hole CNT4. In addition, the pixel electrode 15 is electrically connected via the protrusion 16ab of the first capacitor electrode 16a, the contact hole CNT5, the relay electrode 6c, the contact hole CNT6, the relay electrode 71b, the contact hole CNT7, the relay electrode 9, and the contact hole CNT8. Is done.

According to the first embodiment, the following effects can be obtained.
(1) Since the relay electrode 9 is provided between the second capacitor wiring 71 and the pixel electrode 15 on the element substrate 10, an electrical short circuit between the second capacitor wiring 71 and the contact hole CNT8 is prevented. The In addition, since it is not necessary to consider a short circuit with the second capacitor wiring 71, the contact hole CNT8 is planar with respect to the main body portion 16aa of the first capacitor electrode 16a having light shielding properties and the overhanging portion 16ba of the second capacitor electrode 16b. Thus, light leakage caused by the contact hole CNT8 can be reliably shielded by the main body 16aa and the overhanging portion 16ba.
That is, it is possible to provide the liquid crystal device 100 having the contact hole CNT8 of the pixel electrode 15 in which an electrical short circuit with other wiring is prevented without reducing the aperture ratio of the pixel P.

(2) Since the capacitor wiring 7 is composed of the second capacitor electrode 16b and the second capacitor wiring 71 as the first capacitor wiring, the electric resistance can be reduced as compared with the second capacitor electrode 16b alone.
In addition, since the second capacitor electrode 16b in the storage capacitor 16 functions as the first capacitor wiring, the element capacitor 10 is compared with the case where the first capacitor wiring is provided in a layer different from the second capacitor electrode 16b on the element substrate 10. The wiring structure on the substrate 10 can be simplified.

  (3) The contact hole CNT8 that electrically connects the pixel electrode 15 and the relay electrode 9 is formed to be larger in plan view than the contact holes CNT5, CNT6, and CNT7 provided on the semiconductor layer 30a side with respect to the relay electrode 9. Has been. Thereby, even if the pixel electrode 15 is formed using a transparent conductive film such as ITO having a higher resistance than the relay electrode 9, an electrically stable connection between the pixel electrode 15 and the relay electrode 9 can be realized.

(Second Embodiment)
<Electronic equipment>
FIG. 7 is a schematic diagram illustrating a configuration of a projection display device as an electronic apparatus. As shown in FIG. 7, a projection display apparatus 1000 as an electronic apparatus according to the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 as light separation elements. Three reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a light combining element As a cross dichroic prism 1206 and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205.
Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204.
The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 of the first embodiment described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection display device 1000, the liquid crystal device 100 in which a desired aperture ratio is secured in the pixel P is used as the liquid crystal light valves 1210, 1220, and 1230. Therefore, the light emitted from the polarization illumination device 1100 is effectively used. The bright display quality is realized by using it.

  Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1) The shape of the relay electrode 9 in the liquid crystal device 100 of the first embodiment is not limited to this. FIG. 8 is a schematic plan view showing a relay electrode according to a modification. For example, as shown in FIG. 8, the relay electrode 9 of the modification is provided in a non-opening region that substantially partitions the pixel P, and includes a protruding portion 9 b that protrudes in the Y direction along the data line 6, and a scanning line. 3 and a protruding portion 9c protruding in the X direction. The pixel electrode 15 is disposed so as to overlap the protruding portions 9b and 9c.
According to such a shape of the relay electrode 9, the four sides of the pixel electrode 15 in the pixel P can be shielded by the light-shielding relay electrode 9 disposed on the side close to the liquid crystal layer 50. Therefore, light leakage of the pixel P due to flicker or the like can be shielded in a wide viewing angle range.

  (Modification 2) The configuration of the capacitor wiring 7 in the liquid crystal device 100 of the first embodiment is not limited to this. For example, the second capacitor electrode 16b extending in the Y direction across the plurality of pixels P may be used as the capacitor wiring 7, and the second capacitor wiring 71 may function as a shield layer. According to this, when a signal corresponding to image display is applied to the data line 6, a shield layer is provided to prevent noise on the data line 6 due to an electric field generated by a potential difference between adjacent pixel electrodes 15. Can be reduced.

  (Modification 3) The semiconductor layer 30a in the TFT 30 is not limited to be disposed so as to overlap the scanning line 3 as in the above embodiment. For example, the arrangement of the relay electrode 9 and the contact hole CNT8 of the present application is applied even if the semiconductor layer 30a is arranged to be overlapped with the data line 6 or the semiconductor layer 30a is bent in the middle so as to be overlapped with the scanning line 3 and the data line 6. Can do.

(Modification 4) The electro-optical device to which the wiring structure of the element substrate 10 can be applied is not limited to the transmissive liquid crystal device 100. For example, the present invention can also be applied to a reflective liquid crystal device in which the pixel electrode 15 is formed of a reflective metal material such as Al. In the reflective liquid crystal device, a silicon substrate may be used as the material of the element substrate 10.
Further, it is an active drive type electro-optical device including a transistor, and can be applied to a display device such as an organic EL (Electro Luminessence) device or an electrophoresis device.

  (Modification 5) The electronic apparatus to which the liquid crystal device 100 is applied is not limited to the projection display device 1000 of the above embodiment. For example, projection-type HUD (head-up display), direct-view type HMD (head-mounted display), electronic book, personal computer, digital still camera, LCD TV, viewfinder type or monitor direct-view type video recorder, car navigation system It can be suitably used as a display unit of an information terminal device such as an electronic notebook or POS.

  DESCRIPTION OF SYMBOLS 3 ... Scanning line, 6 ... Data line, 9 ... Relay electrode, 9b, 9c ... Projection part of relay electrode, 10 ... Element substrate, 15 ... Pixel electrode, 16 ... Retention capacity, 16a ... First capacity electrode, 16aa ... 1 body electrode body, 16b ... second capacitor electrode, 16ba ... second capacitor electrode projection, 100 ... liquid crystal device as electro-optical device, 1000 ... projection type display device as electronic device, CNT8 ... pixel electrode Contact hole.

Claims (6)

A pixel electrode;
A transistor provided corresponding to the pixel electrode;
A light-shielding capacitive wiring provided so as to cover the semiconductor layer of the transistor between the transistor and the pixel electrode;
A relay electrode electrically connected to the pixel electrode via a contact hole between the capacitor wiring and the pixel electrode;
The capacitor wiring has a protruding portion that protrudes at an opening corner of the pixel with respect to the pixel electrode,
The electro-optical device, wherein the contact hole is formed so as to overlap the overhanging portion. The capacitor wiring includes a first capacitor wiring having the projecting portion and a second capacitor wiring provided on the substrate in an upper layer than the first capacitor wiring and electrically connected to the first capacitor wiring. And
The electro-optical device according to claim 1, wherein the relay electrode is provided between the second capacitor wiring and the pixel electrode. A storage capacitor electrically connected to the pixel electrode;
3. The electro-optical device according to claim 2, wherein one of the pair of capacitor electrodes in the storage capacitor constitutes the first capacitor wiring. A scanning line and a data line electrically connected to the transistor and intersecting each other;
The relay electrode has a light-shielding property, and has a protruding portion that protrudes in an extending direction of the scanning line and an extending direction of the data line, and overlaps an intersection of the scanning line and the data line. The electro-optical device according to claim 1, wherein the electro-optical device is provided.   5. The electro-optical device according to claim 1, wherein the contact hole on the pixel electrode side with respect to the relay electrode is planarly larger than the contact hole on the semiconductor layer side. apparatus.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images