JP2017097086A - Liquid crystal device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of improving display qualities, and an electronic apparatus.SOLUTION: The liquid crystal device includes a liquid crystal layer 15 disposed on a first substrate 10a, a first light-shielding layer 3c1 disposed between the first substrate 10a and the liquid crystal layer 15, a second light-shielding layer 3c2 disposed between the first light-shielding layer 3c1 and the liquid crystal layer 15, a first transistor 30 (301) disposed in a display region, and a second transistor disposed in a peripheral region that is a peripheral region of the display region. The first transistor 301 is disposed to overlap at least the second light-shielding layer 3c2 in a plan view, while the second transistor is disposed to overlap at least the first light-shielding layer 3c2 in a plan view.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a liquid crystal device and an electronic apparatus.

  As the liquid crystal device, for example, an active drive type liquid crystal device including a transistor for switching control of a pixel electrode for each pixel is known. This liquid crystal device is used, for example, as a liquid crystal light valve of a liquid crystal projector as an electronic apparatus.

  The liquid crystal device includes an element substrate, a counter substrate disposed so as to face the element substrate, and a liquid crystal layer sandwiched between the element substrate and the counter substrate. The element substrate includes the transistor and a light shielding layer that shields light from the liquid crystal projector.

  For example, in the liquid crystal device described in Patent Document 1, a transistor is provided on a substrate in a pixel region, and a first light-shielding film and a second light-shielding film are provided between the substrate and the transistor (active layer). A method is disclosed for blocking incoming light. In particular, as the amount of light of the liquid crystal projector increases, an improvement in light shielding properties is required.

JP 2003-131261 A

  However, Patent Document 1 discloses the structure of the light shielding film in the pixel region, but does not disclose the structure of the light shielding film in the peripheral region around the pixel region, and when light enters the transistor in the peripheral region, There is a problem of adverse effects such as changes in transistor characteristics.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 A liquid crystal device according to this application example includes a substrate, a liquid crystal layer disposed on the substrate, a first light-shielding layer disposed between the substrate and the liquid crystal layer, and the first A second light-shielding layer disposed between the light-shielding layer and the liquid crystal layer; a first transistor provided between the second light-shielding layer and the liquid crystal layer in the display region; and a region around the display region A second transistor provided between the first light-shielding layer and the liquid crystal layer in the peripheral region, wherein the first transistor is arranged to overlap at least the second light-shielding layer in plan view. The second transistor is disposed so as to overlap at least the first light shielding layer in plan view.

  According to this application example, since the first transistor of the pixel arranged in the display area overlaps the second light shielding layer in plan view, the first transistor is shielded even when light is incident on the display area. Can do. On the other hand, since the second transistor arranged in the peripheral region overlaps the first light shielding layer in plan view, it can be shielded even when light leaking from the outside is incident, for example. Furthermore, since the second light shielding layer is disposed in a layer closer to the first transistor than the first light shielding layer, it is possible to further suppress the light from entering the first transistor in the light transmission region. Further, the light shielding property against oblique light can be improved.

  Application Example 2 In the liquid crystal device according to the application example, it is preferable that the first transistor is disposed so as to overlap the first light shielding layer and the second light shielding layer in plan view.

  According to this application example, since the first transistor is arranged so as to overlap the two layers of the first light shielding layer and the second light shielding layer in plan view, the first transistor in the region where light is transmitted (display region). The light shielding property can be further improved.

  Application Example 3 In the liquid crystal device according to the application example, the first light shielding layer and the second light shielding layer are electrically connected to the gate electrode of the first transistor through one contact hole. Is preferred.

  According to this application example, since the first light-shielding layer and the second light-shielding layer are electrically connected to the gate electrode, it is possible to suppress fluctuations in transistor characteristics such as potential variation as in the case of floating. it can. Furthermore, since the connection is made with one contact hole, it is possible to suppress the aperture ratio from being greatly lowered. Further, it is possible to effectively cope with a case where the pixel pitch is narrowed.

  Application Example 4 In the liquid crystal device according to the application example described above, it is preferable that at least one of the first light shielding layer and the second light shielding layer is a material having light reflectivity.

  According to this application example, since the first light-shielding layer and the second light-shielding layer have light reflectivity, it is possible to prevent the first transistor and the second transistor (and also the liquid crystal device) from being heated.

  Application Example 5 In the liquid crystal device according to the application example, it is preferable that a material of the first light shielding layer and the second light shielding layer is tungsten silicide.

  According to this application example, since the first light-shielding layer and the second light-shielding layer are tungsten silicide, it is possible to prevent the first transistor and the second transistor (and also the liquid crystal device) from being heated.

  Application Example 6 An electronic apparatus according to this application example includes the liquid crystal device described above.

  According to this application example, since the liquid crystal device is provided, an electronic apparatus having excellent display quality can be provided.

FIG. 2 is a schematic plan view illustrating a configuration of a liquid crystal device. FIG. 2 is a schematic cross-sectional view taken along the line H-H ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view mainly illustrating a pixel structure in a liquid crystal device. The enlarged plan view which expands and shows the A section of the liquid crystal device in FIG. The schematic sectional drawing which shows the structure of the light shielding layer of the display area of 1st Embodiment. The schematic sectional drawing which shows the structure of the light shielding layer of a peripheral region. Schematic which shows the structure of the projector as an electronic device. The schematic sectional drawing which shows the structure of the light shielding layer of the display area of 2nd Embodiment. The schematic sectional drawing which shows the structure of the light shielding layer of a peripheral region. The schematic plan view which shows the structure of the light shielding layer and 1st transistor of the display area of 3rd Embodiment. FIG. 3 is a schematic cross-sectional view illustrating a configuration of a light shielding layer and a first transistor in a display region.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In the present embodiment, an active matrix liquid crystal device including a thin film transistor as a pixel switching element will be described as an example of the liquid crystal device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

(First embodiment)
<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing the configuration of the liquid crystal device. FIG. 2 is a schematic cross-sectional view along the line HH ′ of the liquid crystal device shown in FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the configuration of the liquid crystal device will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 according to the present embodiment includes an element substrate 10 and a counter substrate 20 that are arranged to face each other, and a liquid crystal layer 15 that is sandwiched between the pair of substrates. As the first base material 10a (substrate) constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates are bonded via a sealing material 14 disposed along the outer periphery of the counter substrate 20. A liquid crystal having positive or negative dielectric anisotropy is sealed in the gap to form the liquid crystal layer 15.

  For example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed as the sealing material 14. Spacers for keeping a constant distance between the pair of substrates are mixed in the sealing material 14. The spacer is used to create a cell gap.

  A display area E in which a plurality of pixels P contributing to display are arranged is provided inside the sealing material 14. Around the display area E, a peripheral area E1 provided with peripheral circuits that do not contribute to display is arranged.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. Further, an inspection circuit 25 is provided between the sealing material 14 and the display area E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the display area E along the other two sides that are orthogonal to the one side and face each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  A light shielding film 18 (parting portion) is also provided in the same frame shape inside the sealing material 14 arranged in a frame shape on the counter substrate 20 side. The light shielding film 18 is made of, for example, a light reflective metal or metal oxide, and the inside of the light shielding film 18 is a display region E having a plurality of pixels P. As the light shielding film 18, for example, tungsten silicide (WSi) can be used. Although not shown in FIG. 1, a light shielding film that divides a plurality of pixels P in a plane is also provided in the display area E.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 65 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

  As shown in FIG. 2, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (hereinafter referred to as “transistor 30”) as a switching element. , Signal wiring (not shown), and a first alignment film 28 covering them are formed.

  Further, a light shielding structure (not shown) that prevents light from entering the semiconductor layer in the transistor 30 and unstable switching operation is employed. The element substrate 10 in the present invention includes at least the pixel electrode 27, the transistor 30, the signal wiring, and the first alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, the light shielding film 18, the insulating layer 33 formed so as to cover it, the counter electrode 31 provided so as to cover the insulating layer 33, and the counter electrode 31 And a second alignment film 32 is provided. The counter substrate 20 in the present invention includes at least the light shielding film 18, the counter electrode 31, and the second alignment film 32.

  The light shielding film 18 surrounds the display area E as shown in FIG. 1 and is provided at a position overlapping the scanning line driving circuit 24 and the inspection circuit 25 in plan view. Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The insulating layer 33 is made of, for example, an inorganic material such as silicon oxide, and is provided so as to cover the light shielding film 18 with optical transparency. As a method of forming such an insulating layer 33, for example, a method of forming a film using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The counter electrode 31 is made of, for example, a transparent conductive film such as ITO (Indium Tin Oxide), covers the insulating layer 33, and includes the element substrate 10 by the vertical conduction portions 26 provided at the four corners of the counter substrate 20 as shown in FIG. It is electrically connected to the side wiring.

  The first alignment film 28 that covers the pixel electrode 27 and the second alignment film 32 that covers the counter electrode 31 are selected based on the optical design of the liquid crystal device 100. As the first alignment film 28 and the second alignment film 32, an inorganic material such as SiOx (silicon oxide) is formed using a vapor phase growth method, and the liquid crystal molecules having a negative dielectric anisotropy are substantially omitted. A vertically aligned inorganic alignment film can be mentioned.

  Such a liquid crystal device 100 is, for example, a transmissive type, and normally white of the pixel P when the voltage is not applied is larger than the transmittance when the voltage is applied, or the pixel P when the voltage is not applied. A normally black mode optical design is adopted in which the transmittance is smaller than the transmittance when a voltage is applied. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  As shown in FIG. 3, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a that are insulated from each other and orthogonal to each other at least in the display region E, and capacitance lines 3 b. For example, the direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a transistor 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a and the capacitive line 3b, and these signal lines, and these constitute the pixel circuit of the pixel P. It is composed.

  The scanning line 3a is electrically connected to the gate of the transistor 30, and the data line 6a is electrically connected to the data line side source / drain region of the transistor 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region of the transistor 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 1), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

  In the liquid crystal device 100, the transistor 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are pixel electrodes at a predetermined timing. 27 is written. The predetermined level of the image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the counter electrode 31 disposed to face the liquid crystal layer 15. The

  In order to prevent the held image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the counter electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the transistor 30 and the capacitive line 3b. The capacitive element 16 has a dielectric layer between two capacitive electrodes.

<Configuration of pixels constituting liquid crystal device>
Next, the configuration of the pixel will be described with reference to FIG. FIG. 4 is a schematic cross-sectional view mainly showing the structure of a pixel in the liquid crystal device. FIG. 4 shows the cross-sectional positional relationship of each component and is expressed on a scale that can be clearly shown.

  As shown in FIG. 4, the pixel P of the liquid crystal device 100 includes an element substrate 10 and a counter substrate 20 disposed to face the element substrate 10. The first base material 10a constituting the element substrate 10 is, for example, a quartz substrate.

  As shown in FIG. 4, a first light shielding layer 3c1 made of, for example, tungsten silicide (WSi) is disposed on the first base material 10a. The first light shielding layer 3c1 is planarly patterned in a lattice shape and defines an opening region of each pixel P.

  A first insulating layer 11a made of silicon oxide or the like is formed on the first light shielding layer 3c1 and the first base material 10a. On the first insulating layer 11a, a second light shielding layer 3c2 made of, for example, tungsten silicide (WSi) having light reflectivity is formed so as to overlap with a partial region of the semiconductor layer 30a in plan view. . A second insulating layer 11b made of silicon oxide or the like is formed on the second light shielding layer 3c2 and the first insulating layer 11a.

  On the second insulating layer 11b, the transistor 30 and the scanning line 3a are formed. The transistor 30 has, for example, an LDD (Lightly Doped Drain) structure, and includes a semiconductor layer 30a made of polysilicon (high purity polycrystalline silicon) and the like, and a gate insulating layer 11g formed on the semiconductor layer 30a. And a gate electrode 30g made of a polysilicon film or the like formed on the gate insulating layer 11g. The scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type transistor 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the transistor 30 is formed as an N-type transistor.

  A third interlayer insulating layer 11c made of silicon oxide or the like is formed on the gate electrode 30g and the gate insulating layer 11g. A capacitive element 16 is provided on the third interlayer insulating layer 11c. Specifically, the first capacitor electrode 16a as the pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the transistor 30, and the capacitor line 3b as the fixed potential side capacitor electrode. A part of the (second capacitor electrode 16b) is disposed to face the dielectric film 16c, whereby the capacitor element 16 is formed.

  The dielectric film 16c is, for example, a silicon nitride film. The second capacitor electrode 16b (capacitor line 3b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. In addition to functioning as a pixel potential side capacitance electrode, the first capacitance electrode 16a relays the pixel electrode 27 and the pixel electrode side source / drain region 30d (drain region) of the transistor 30 via contact holes CNT1, CNT3, and CNT4. Has a function to connect.

  A data line 6a is formed on the capacitive element 16 via a fourth interlayer insulating layer 11d. The data line 6a is connected to the data line side source / drain of the semiconductor layer 30a through the contact hole CNT2 formed in the gate insulating layer 11g, the third interlayer insulating layer 11c, the dielectric film 16c, and the fourth interlayer insulating layer 11d. It is electrically connected to the region 30s (source region).

  A pixel electrode 27 is formed on the data line 6a via a fifth interlayer insulating layer 11e. The fifth interlayer insulating layer 11e is made of, for example, silicon oxide or nitride, and is subjected to a flattening process for flattening a convex portion on the surface generated by covering the region where the transistor 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating. A contact hole CNT4 is formed in the fifth interlayer insulating layer 11e.

  The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region 30d (drain region) of the semiconductor layer 30a by being connected to the first capacitor electrode 16a via the contact holes CNT4 and CNT3. The pixel electrode 27 is formed of a transparent conductive film such as an ITO film, for example.

On the fifth interlayer insulating layer 11e between the pixel electrode 27 and the adjacent pixel electrode 27, a first alignment film 28 obtained by oblique deposition of an inorganic material such as silicon oxide (SiO ₂ ) is provided. On the first alignment film 28, a liquid crystal layer 15 in which liquid crystal or the like is sealed in a space surrounded by the sealing material 14 is provided.

On the other hand, on the insulating layer 33 (on the liquid crystal layer 15 side) of the counter substrate 20, for example, the counter electrode 31 is provided over the entire surface. A second alignment film 32 is formed on the counter electrode 31 by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ). The counter electrode 31 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 27 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the alignment films 28 and 32 in a state where no electric field is generated between the pixel electrode 27 and the counter electrode 31. The sealing material 14 is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the element substrate 10 and the counter substrate 20, and sets the distance between the element substrate 10 and the counter substrate 20 to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

  For example, light from a projector 1000 to be described later enters from the back side (element substrate 10 side) of the liquid crystal device 100.

<Configuration of light shielding layer>
Next, the structure of the light shielding layer of 1st Embodiment is demonstrated with reference to FIGS. FIG. 5 is an enlarged plan view showing the portion A of the liquid crystal device in FIG. 1 in an enlarged manner. FIG. 6 is a schematic cross-sectional view showing the structure of the light shielding layer (second light shielding layer) in the display area. FIG. 7 is a schematic cross-sectional view showing the structure of the light shielding layer (first light shielding layer) in the peripheral region.

  As shown in FIG. 5, the liquid crystal device 100 includes a display region E in which a pixel P having a first transistor 301 is disposed, and a peripheral region E1 in which a peripheral circuit having a second transistor 302 is disposed.

  In the display area E, for example, the first insulating layer 11a, the second light shielding layer 3c2, the second insulating layer 11b, and the semiconductor layer 30a1 are stacked in this order from the first base material 10a side. The second light shielding layer 3c2 is disposed so as to overlap the semiconductor layer 30a1 in plan view. Specifically, the second light shielding layer 3c2 is disposed so as to overlap at least the LDD region of the semiconductor layer 30a1 in plan view.

  In the peripheral region E1, for example, the first light shielding layer 3c1, the first insulating layer 11a, the second insulating layer 11b, and the semiconductor layer 30a2 are stacked in this order from the first base material 10a side. The first light shielding layer 3c1 is arranged to overlap the semiconductor layer 30a2 in plan view. Specifically, the first light shielding layer 3c1 is disposed so as to overlap at least the LDD region of the semiconductor layer 30a2.

  The material of the first light-shielding layer 3c1 and the second light-shielding layer 3c2 may be any material having a light-shielding property or a light-reflecting property. For example, similar to the light-shielding film 18, a light-reflective tungsten silicide (WSi) is used. be able to. By using tungsten silicide in this manner, heat can be suppressed from being applied to the transistor.

  The second light shielding layer 3c2 provided in the display area E is arranged so as to overlap the first transistor 301 in plan view, and can be shielded from light at a position closer to the first light shielding layer 3c1. Thus, the light shielding property can be improved in a light transmission region where light such as a projector is transmitted.

  Since the first light shielding layer 3c1 provided in the peripheral region E1 is arranged so as to overlap the second transistor 302 in plan view, it is possible to shield light leaked from the outside. For example, the transistor characteristics are Fluctuation can be suppressed.

  The film thickness of the first light shielding layer 3c1 is, for example, 200 nm or more. The film thickness of the second light shielding layer 3c2 is, for example, 100 nm or more. The film thickness of the first insulating layer 11a is, for example, 2000 mm. The film thickness of the second insulating layer 11b is, for example, 2000 mm.

<Configuration of electronic equipment>
FIG. 8 is a schematic diagram illustrating a configuration of a projector as an electronic apparatus. Hereinafter, the configuration of the projector will be described with reference to FIG.

  As shown in FIG. 8, the projector 1000 according to the present embodiment includes a polarization illumination device 1100 as an illumination system arranged along the system optical axis L, two dichroic mirrors 1104 and 1105 as light separation elements, and 3 Two reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulating means, and a cross as a light combining element A dichroic prism 1206 and a projection lens 1207 are provided.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205. Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204. The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206.

  In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected onto the screen 1300 by the projection lens 1207 constituting the projection optical system 1400, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is a liquid crystal device 100 to be described later. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  Since the electronic apparatus having the above-described configuration uses the liquid crystal device 100 of the above-described embodiment, it is possible to provide the projector 1000 having high reliability and excellent display characteristics.

  In addition to the projector 1000, examples of the electronic device on which the liquid crystal device 100 is mounted include a head mounted display (HMD), a head-up display (HUD), a smartphone, an EVF (Electrical View Finder), a mobile phone, and a mobile computer. It can be used in various electronic devices such as digital cameras, digital video cameras, in-vehicle devices, and lighting devices.

  As described above in detail, according to the liquid crystal device 100 and the electronic apparatus of the first embodiment, the following effects can be obtained.

  (1) According to the liquid crystal device 100 of the first embodiment, the first transistor 301 of the pixel P arranged in the display area E overlaps with the second light-shielding layer 3c2 in plan view. Even when light from 1000 is incident, the first transistor 301 can be shielded from the light. On the other hand, since the second transistor 302 of the peripheral circuit arranged in the peripheral region E1 overlaps the first light shielding layer 3c1 in a plan view, for example, even when light leaking from the outside enters, it can be shielded. Therefore, the light can be shielded without any defective characteristics of the peripheral circuit. Further, since the second light shielding layer 3c2 is disposed in a layer closer to the first transistor 301 than the first light shielding layer 3c1, it is possible to further suppress the light from entering the first transistor 301 in the light transmission region. . Further, since light can be shielded at a position close to the first transistor 301, the light shielding property against oblique light can be improved.

  (2) According to the liquid crystal device 100 of the first embodiment, since the first light-shielding layer 3c1 and the second light-shielding layer 3c2 are made of tungsten silicide having light reflectivity, the first transistor 301 and the second transistor 302 are used. (Further, the liquid crystal device 100) can be prevented from being heated.

  (3) According to the electronic device of the first embodiment, since the liquid crystal device 100 is provided, an electronic device with excellent display quality can be provided.

(Second Embodiment)
<Configuration of light shielding layer>
Next, the structure of the light shielding layer of 2nd Embodiment is demonstrated with reference to FIG.9 and FIG.10. FIG. 9 is a schematic cross-sectional view showing the configuration of the light shielding layer in the display area. FIG. 10 is a schematic cross-sectional view showing the configuration of the light shielding layer in the peripheral region.

  The liquid crystal device 200 of the second embodiment is different from the liquid crystal device 100 of the first embodiment described above in that the two light shielding layers 3c1 and 3c2 are arranged in the display area E. The other parts are almost the same. Therefore, in the second embodiment, portions different from the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  As shown in FIG. 9, in the display area E of the liquid crystal device 200 of the second embodiment, the first light shielding layer 3c1, the first insulating layer 11a, the second light shielding layer 3c2, and the second insulation are formed from the first base material 10a side. The layer 11b and the semiconductor layer 30a1 are stacked in this order. The first light shielding layer 3c1 and the second light shielding layer 3c2 are arranged to overlap the semiconductor layer 30a1 in plan view. Specifically, the first light shielding layer 3c1 and the second light shielding layer 3c2 are arranged so as to overlap at least the LDD region of the semiconductor layer 30a1 in plan view.

  As shown in FIG. 10, in the peripheral region E1, as in the first embodiment, the first light shielding layer 3c1, the first insulating layer 11a, the second insulating layer 11b, and the semiconductor layer 30a2 from the first base material 10a side. Are stacked in this order. The first light shielding layer 3c1 is arranged to overlap the semiconductor layer 30a2 in plan view. Specifically, the first light shielding layer 3c1 is disposed so as to overlap at least the LDD region of the semiconductor layer 30a2.

  Since the first transistor 301 in the display region E is arranged so as to overlap the first light shielding layer 3c1 and the second light shielding layer 3c2 in plan view, the first transistor 301 has a light shielding property as compared with the case of only the second light shielding layer 3c2. Can be improved. In particular, the light shielding property can be greatly improved in the light transmission region.

  As in the first embodiment, the first light shielding layer 3c1 provided in the peripheral region E1 is disposed so as to overlap the second transistor 302 in a plan view, and therefore can shield light leaked from the outside. For example, fluctuations in transistor characteristics can be suppressed.

  As described above in detail, according to the liquid crystal device 200 of the second embodiment, the following effects can be obtained in addition to the effects of the first embodiment.

  (4) According to the liquid crystal device 200 of the second embodiment, in the display region E, the first transistor 301 is disposed so as to overlap with the first light shielding layer 3c1 and the second light shielding layer 3c2 in plan view. Therefore, the light from the projector 1000 can be prevented from entering the first transistor 301, and the light shielding property can be improved.

(Third embodiment)
<Configuration of light shielding layer>
Next, the structure of the light shielding layer of 3rd Embodiment is demonstrated with reference to FIG.11 and FIG.12. FIG. 11 is a schematic plan view showing the configuration of the light shielding layer and the first transistor in the display area. FIG. 12 is a schematic cross-sectional view illustrating the configuration of the light shielding layer and the first transistor in the display area.

  In the liquid crystal device 300 of the third embodiment, compared to the liquid crystal device 200 of the second embodiment described above, two layers of the first light shielding layer 3c1 and the second light shielding layer 3c2 are arranged in the display region E, and further the first light shielding layer. The portions where the layer 3c1 and the second light shielding layer 3c2 are electrically connected to the gate electrode 30g are different, and the other portions are substantially the same. For this reason, in 3rd Embodiment, a different part from 2nd Embodiment is demonstrated in detail, and description is abbreviate | omitted suitably about another overlapping part.

  As shown in FIGS. 11 and 12, in the display region E of the liquid crystal device 300 of the third embodiment, as in the second embodiment, the first light shielding layer 3c1 and the first insulating layer are formed from the first base material 10a side. 11a, the second light shielding layer 3c2, the second insulating layer 11b, and the semiconductor layer 30a1 are stacked in this order. Furthermore, a gate electrode 30g is disposed on the semiconductor layer 30a1 via a gate insulating layer 11g.

  The first light shielding layer 3c1 and the second light shielding layer 3c2 are electrically connected to the gate electrode 30g through the contact hole CNT11. The first light shielding layer 3c1 and the second light shielding layer 3c2 are electrically connected to the gate electrode 30g through the contact hole CNT12.

  The structure of the peripheral region E1 is the same as that of the first embodiment and the second embodiment.

  In the first transistor 301 in the display region E, the first light-shielding layer 3c1 and the second light-shielding layer 3c2 and the gate electrode 30g are electrically connected, and the first light-shielding layer 3c1 and the second light-shielding layer 3c2 can be set to the gate potential. Therefore, transistor characteristics can be improved.

  In addition, since the first light shielding layer 3c1 and the second light shielding layer 3c2 can be electrically connected to the gate electrode 30g with one contact hole CNT11 (or CNT12), it is possible to suppress the spread of the planar area, and the opening The rate can be maintained. Furthermore, it is effective when the pixel pitch is narrowed.

  As described above in detail, according to the liquid crystal device 300 of the third embodiment, the following effects can be obtained in addition to the effects of the above embodiments.

  (5) According to the liquid crystal device 300 of the third embodiment, since the first light shielding layer 3c1 and the second light shielding layer 3c2 are electrically connected to the gate electrode 30g, the potential varies as in the case of floating. For example, the transistor characteristics can be prevented from changing. Furthermore, since it is connected by one contact hole CNT11 (or CNT12), it is possible to suppress the aperture ratio from being greatly reduced. Further, it is possible to effectively cope with a case where the pixel pitch is narrowed. Furthermore, there are few restrictions on layout.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the light shielding layer in the peripheral region E1 is not limited to the first light shielding layer 3c1, and two layers of the first light shielding layer 3c1 and the second light shielding layer 3c2 may be arranged.

(Modification 2)
The second light shielding layer 3c2 of the first embodiment described above is not limited to being in a floating state. For example, a contact hole may be provided to be electrically connected to the gate electrode 30g.

  3a ... scanning line, 3b ... capacitance line, 3c1 ... first light shielding layer, 3c2 ... second light shielding layer, 6a ... data line, 10 ... element substrate, 10a ... first base material, 11a ... first insulating layer, 11b ... 2nd insulating layer, 11c ... 3rd interlayer insulating layer, 11d ... 4th interlayer insulating layer, 11e ... 5th interlayer insulating layer, 11g ... Gate insulating layer, 14 ... Sealing material, 15 ... Liquid crystal layer, 16 ... Capacitance element, 16a ... 1st capacity electrode, 16b ... 2nd capacity electrode, 16c ... Dielectric film, 18 ... Light shielding film, 20 ... Opposite substrate, 20a ... 2nd base material, 22 ... Data line drive circuit, 24 ... Scan line drive circuit , 25 ... inspection circuit, 26 ... vertical conduction part, 27 ... pixel electrode, 28 ... first alignment film, 29 ... wiring, 30 ... transistor, 30a ... semiconductor layer, 30c ... channel region, 30d ... pixel electrode side source / drain region 30d1... Pixel electrode side LDD region, 0 g: gate electrode, 30 s: data line side source / drain region, 30 s 1: data line side LDD region, 31 ... counter electrode, 32 ... second alignment film, 33 ... insulating layer, 65 ... terminal for external connection, 100, 200, DESCRIPTION OF SYMBOLS 300 ... Liquid crystal device 301 ... 1st transistor 302 ... 2nd transistor 1000 ... Projector 1100 ... Polarized illumination apparatus 1101 ... Lamp unit 1102 ... Integrator lens 1103 ... Polarization conversion element 1104, 1105 ... Dichroic mirror, 1106, 1107, 1108 ... reflective mirror, 1201, 1202, 1203, 1204, 1205 ... relay lens, 1206 ... cross dichroic prism, 1207 ... projection lens, 1210, 1220, 1230 ... liquid crystal light valve, 1300 ... screen, 1 00 ... projection optical system.

Claims (6)

A substrate,
A liquid crystal layer disposed on the substrate;
A first light-shielding layer disposed between the substrate and the liquid crystal layer;
A second light-shielding layer disposed between the first light-shielding layer and the liquid crystal layer;
A first transistor provided between the second light-shielding layer and the liquid crystal layer in a display region;
A second transistor provided between the first light-shielding layer and the liquid crystal layer in a peripheral region that is a peripheral region of the display region;
With
The first transistor is disposed so as to overlap at least the second light shielding layer in plan view,
The liquid crystal device, wherein the second transistor is arranged to overlap at least the first light shielding layer in a plan view. The liquid crystal device according to claim 1,
The liquid crystal device, wherein the first transistor is arranged to overlap the first light shielding layer and the second light shielding layer in a plan view. The liquid crystal device according to claim 1 or 2,
The liquid crystal device, wherein the first light shielding layer and the second light shielding layer are electrically connected to the gate electrode of the first transistor through one contact hole. The liquid crystal device according to any one of claims 1 to 3,
At least one of the first light-shielding layer and the second light-shielding layer is a light-reflective material. The liquid crystal device according to claim 4,
The liquid crystal device according to claim 1, wherein a material of the first light shielding layer and the second light shielding layer is tungsten silicide.   An electronic apparatus comprising the liquid crystal device according to any one of claims 1 to 5.

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