JP6361155B2 - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  As the electro-optical device, for example, an active drive type liquid crystal device including a transistor for each pixel as an element for controlling switching of a pixel electrode is known. Liquid crystal devices are used in, for example, direct view displays and light valves.

  In the liquid crystal device, for example, a liquid crystal layer is sandwiched between an element substrate on which a pixel electrode is formed and a counter substrate on which a common electrode is formed. In such a liquid crystal device, a difference is likely to occur between the amount of charge transfer between the pixel electrode and the liquid crystal layer and the amount of charge transfer between the common electrode and the liquid crystal layer. As a result, there is a problem that the optimum Vcom which becomes the flicker minimum shifts in the plus direction or the minus direction, and as a result, flicker occurs.

  Therefore, in Patent Document 1, only the pixel electrode made of a metal electrode is subjected to surface treatment, and the charge transfer amount between the pixel electrode and the liquid crystal layer is combined with the charge transfer amount between the common electrode and the liquid crystal layer. In addition, a method of suppressing display quality deterioration such as flicker is disclosed.

JP 2011-209547 A

  However, since the amount of charge transfer varies depending not only on the material of the electrode but also on the planar area difference between the pixel electrode and the common electrode, there is a problem that display quality deteriorates such as flickering.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example is sealed in an element substrate, a counter substrate disposed so as to face the element substrate via a sealing material, and a region surrounded by the sealing material. An electro-optical layer, a pixel electrode disposed between the element substrate and the electro-optical layer, a counter electrode disposed between the counter substrate and the electro-optical layer, and covering the pixel electrode A first alignment film, a second alignment film disposed so as to cover the counter electrode, a first organic film disposed so as to cover the first alignment film, and the second alignment film. A contact angle between the first organic film and water, and the contact angle between the first organic film and water is larger than the contact angle between the first organic film and water. As will be described later, when the coverage of the organic film on the electrode increases, the contact angle of the organic film with water increases.

  According to this application example, since the contact angle of the second organic film with water is large, that is, the coverage of the second organic film is large, for example, the electrode material is the same as in the transmission type electro-optical device. If there is a difference in the area of the electrodes, specifically, even if the opening area of the counter electrode is larger than that of the pixel electrode, the amount of charge transfer between the pixel electrode and the liquid crystal layer, and the counter electrode and the liquid crystal The amount of charge transfer with the layer can be made substantially equal. In other words, it is possible to correct a deviation in the amount of ions adsorbed on the alignment film. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  Application Example 2 An electro-optical device according to this application example is enclosed in an element substrate, a counter substrate disposed so as to face the element substrate via a sealing material, and a region surrounded by the sealing material. An electro-optical layer, a pixel electrode disposed between the element substrate and the electro-optical layer, a counter electrode disposed between the counter substrate and the electro-optical layer, and covering the pixel electrode A first alignment film, a second alignment film disposed so as to cover the counter electrode, a first organic film disposed so as to cover the first alignment film, and the second alignment film. A contact angle between the first organic film and water, which is smaller than a contact angle between the first organic film and water.

  According to this application example, the contact angle of the second organic film with water is small (the coverage of the second organic film is small), that is, the coverage of the first organic film is large. When the material of the electrode is different as in the device, specifically, even when a metal material is used for the pixel electrode and ITO is used for the counter electrode, the amount of charge transfer between the pixel electrode and the liquid crystal layer, The amount of charge transfer between the counter electrode and the liquid crystal layer can be made substantially equal. In other words, it is possible to correct a deviation in the amount of ions adsorbed on the alignment film. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  Application Example 3 In the electro-optical device according to the application example described above, a contact angle difference which is a difference between a contact angle of the second organic film with water and a contact angle of the first organic film with water, and the pixel electrode And the area of the counter electrode satisfy the following relational expression. Difference in contact angle (deg) = k × (area of pixel electrode per 1-1 pixel / area of counter electrode per pixel) × 100 (%) (provided that 0.3 ≦ k ≦ 0.7)

  According to this application example, in the transmissive electro-optical device, it is possible to correct a deviation in the amount of ions adsorbed on the first alignment film and the second alignment film. As a result, it is possible to suppress deterioration in display quality such as occurrence of flicker. Note that as the coverage increases, the contact angle increases. Specifically, when the coverage is 100%, the contact angle is about 90 ° to 100 °.

  Application Example 4 In the electro-optical device according to the application example described above, a work function difference that is a difference between a work function of the pixel electrode and a work function of the counter electrode, a contact angle of the first organic film with water, and the A contact angle difference, which is a difference in contact angle between the second organic film and water, satisfies the following relational expression. Contact angle difference (deg) = k × work function difference (eV) (however, 50 ≦ k ≦ 150)

  According to this application example, in the reflection type electro-optical device, it is possible to correct a deviation in the amount of ions adsorbed on the first alignment film and the second alignment film. As a result, it is possible to suppress deterioration in display quality such as occurrence of flicker.

  Application Example 5 In the electro-optical device according to the application example, the first alignment film and the second alignment film are inorganic alignment films, and the organic film includes a substance generated from a silane coupling material. It is preferable.

  According to this application example, since the first alignment film and the second alignment film are inorganic alignment films and silanol groups exist on the surface of the inorganic alignment film, the silanol groups react with the hydrolysis groups of the silane coupling material. Thus, a substance generated from the silane coupling material can be applied to the surface of the inorganic alignment film. As a result, surface treatment can be performed on the inorganic alignment film, and display quality can be prevented from being deteriorated.

  Application Example 6 In the electro-optical device manufacturing method according to this application example, the first surface treatment is performed on the first alignment film disposed so as to cover the pixel electrode, and the first organic film is formed. Performing a second surface treatment on the second alignment film disposed so as to cover the counter electrode, and forming a second organic film, and comparing the contact angle of the first organic film with water The contact angle between the second organic film and water is large.

  According to this application example, since the surface treatment is performed so that the coverage of the second organic film is increased, for example, the material of the electrode is the same as in the transmission type electro-optical device, and the area of the electrode is different. Specifically, even when the opening area of the counter electrode is larger than that of the pixel electrode, the charge transfer amount between the pixel electrode and the liquid crystal layer and the charge transfer amount between the counter electrode and the liquid crystal layer are Can be made substantially equal. In other words, it is possible to correct a deviation in the amount of ions adsorbed on the alignment film. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  Application Example 7 In the electro-optical device manufacturing method according to this application example, the first surface treatment is performed on the first alignment film disposed so as to cover the pixel electrode, and the first organic film is formed. Performing a second surface treatment on the second alignment film disposed so as to cover the counter electrode, and forming a second organic film, and comparing the contact angle of the first organic film with water The contact angle between the second organic film and water is small.

  According to this application example, the surface treatment is performed so that the coverage of the second organic film is reduced, that is, the coverage of the first organic film is increased. For example, as in a reflective electro-optical device, When the materials are different, specifically, even when a metal material is used for the pixel electrode and ITO is used for the counter electrode, the amount of charge transfer between the pixel electrode and the liquid crystal layer is different from that of the counter electrode and the liquid crystal layer. The amount of charge transfer can be made substantially equal. In other words, it is possible to correct a deviation in the amount of ions adsorbed on the alignment film. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  Application Example 8 In the method for manufacturing an electro-optical device according to the application example, the first alignment film and the second alignment film are inorganic alignment films, and the first surface treatment and the second surface treatment are performed. Is preferably a silane coupling treatment.

  According to this application example, since the first alignment film and the second alignment film are inorganic alignment films and silanol groups exist on the surface of the inorganic alignment film, the silanol groups react with the hydrolysis groups of the silane coupling material. Thus, a substance generated from the silane coupling material can be applied to the surface of the inorganic alignment film. As a result, it is possible to suppress a decrease in display quality.

  Application Example 9 Electronic equipment according to this application example includes the electro-optical device.

  According to this application example, since the electro-optical device is provided, an electronic apparatus capable of improving display characteristics can be provided.

1 is a schematic plan view illustrating a configuration of a liquid crystal device according to a first embodiment. FIG. 2 is a schematic cross-sectional view taken along the line H-H ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view mainly illustrating a pixel structure in a liquid crystal device. The schematic cross section which mainly shows the structure of an inorganic alignment film and the structure of an organic film among liquid crystal devices. 5 is a flowchart showing a method for manufacturing a liquid crystal device in the order of steps. FIG. 4 is a schematic cross-sectional view showing a part of the manufacturing method of the liquid crystal device in the order of steps. FIG. 4 is a schematic cross-sectional view showing a part of the manufacturing method of the liquid crystal device in the order of steps. The schematic diagram which shows the structure of CVD apparatus. Schematic which shows the structure of the projection type display apparatus provided with the liquid crystal device. FIG. 5 is a schematic cross-sectional view illustrating a structure of a liquid crystal device according to a second embodiment. FIG. 10 is a schematic cross-sectional view illustrating a part of the manufacturing method of the liquid crystal device according to the second embodiment in the order of steps. FIG. 10 is a schematic cross-sectional view illustrating a part of the manufacturing method of the liquid crystal device according to the second embodiment in the order of steps. FIG. 9 is a schematic cross-sectional view illustrating a structure of a liquid crystal device according to a modification. FIG. 9 is a schematic cross-sectional view illustrating a structure of a liquid crystal device according to a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In the present embodiment, an active matrix liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example of an electro-optical device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

(First embodiment)
<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing the configuration of the liquid crystal device. 2 is a schematic cross-sectional view taken along the line HH ′ of the liquid crystal device shown in FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the configuration of the liquid crystal device will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 according to the present embodiment includes an element substrate 10 (first substrate) and a counter substrate 20 (second substrate) arranged to face each other, and the pair of substrates 10. , 20 and a liquid crystal layer 15 as an electro-optical layer. As the first base material 10a as the substrate constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates 10, 20 are bonded together via a seal material 14 disposed along the outer periphery of the counter substrate 20. In the element substrate 10, liquid crystal having positive or negative dielectric anisotropy is sealed between the opposing substrates 20 inside the sealing material 14 provided in an annular shape in plan view, thereby forming a liquid crystal layer 15. For the sealing material 14, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. Spacers (not shown) are mixed in the sealing material 14 to keep the distance between the pair of substrates constant.

  A display area E in which a plurality of pixels P are arranged is provided inside the inner edge of the sealing material 14. The display area E may include dummy pixels arranged so as to surround the plurality of pixels P in addition to the plurality of pixels P contributing to display. Although not shown in FIGS. 1 and 2, a light shielding film (black matrix: BM) for planarly dividing the plurality of pixels P in the display area E is provided on the counter substrate 20.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. Further, an inspection circuit 25 is provided between the sealing material 14 and the display area E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the display area E along the other two sides that are orthogonal to the one side and face each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  A light shielding film 18 (parting part) as a light shielding member is provided between the sealing material 14 arranged in a ring shape on the counter substrate 20 and the display region E. The light shielding film 18 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 18 is a display area E having a plurality of pixels P. Although not shown in FIG. 1, a light shielding film that divides a plurality of pixels P in a plane is also provided in the display area E.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 61 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

  As shown in FIG. 2, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (TFT: Thin Film Transistor, which is a switching element) are provided. Hereinafter, it is referred to as “TFT 30”), signal wirings, and an alignment film 28 covering them.

  In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The element substrate 10 in the present invention includes at least the pixel electrode 27, the TFT 30, and the alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, the light shielding film 18, the insulating film 33 formed so as to cover it, the counter electrode 31 provided so as to cover the insulating film 33, and the counter electrode 31 And an alignment film 32 is provided. The counter substrate 20 in the present invention includes at least an insulating film 33, a counter electrode 31, and an alignment film 32.

  As shown in FIG. 1, the light shielding film 18 surrounds the display area E and is provided at a position where the scanning line driving circuit 24 and the inspection circuit 25 overlap in a plan view (illustration is simplified). Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The insulating film 33 is made of, for example, an inorganic material such as silicon oxide, and is provided so as to cover the light shielding film 18 with optical transparency. As a method for forming such an insulating film 33, for example, a method of forming a film using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The counter electrode 31 is made of a transparent conductive film such as ITO, for example, covers the insulating film 33, and electrically connects the wiring on the element substrate 10 side by the vertical conduction portions 26 provided at the four corners of the counter substrate 20 as shown in FIG. Connected.

  The alignment film 28 that covers the pixel electrode 27 and the alignment film 32 that covers the counter electrode 31 are selected based on the optical design of the liquid crystal device 100. For example, an inorganic alignment film formed by depositing an inorganic material such as SiOx (silicon oxide) using a vapor deposition method and substantially vertically aligning with liquid crystal molecules having negative dielectric anisotropy can be given.

  Such a liquid crystal device 100 is a transmission type, and the transmittance of the pixel P when the voltage is not applied is normally white larger than the transmittance when the voltage is applied, or the transmittance of the pixel P when the voltage is not applied. A normally black mode optical design is employed, which is smaller than the transmittance when a voltage is applied. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  As shown in FIG. 3, the liquid crystal device 100 includes a plurality of scanning lines 3a and a plurality of data lines 6a that are insulated from each other and orthogonal to each other at least in the display region E, and a capacitor line 3b as a common potential wiring. The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a TFT 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitive line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. doing.

  The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the data line side source / drain region (source region) of the TFT 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region (drain region) of the TFT 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 1), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a at a predetermined timing.

  In the liquid crystal device 100, the TFT 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 27 at a predetermined timing. It is the structure written in. The predetermined level of the image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the counter electrode 31 disposed to face the liquid crystal layer 15. The

  In order to prevent the held image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the counter electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the TFT 30 and the capacitive line 3b.

<Configuration of pixels constituting liquid crystal device>
FIG. 4 is a schematic cross-sectional view mainly showing the structure of a pixel in the liquid crystal device. Hereinafter, the pixel structure of the liquid crystal device will be described with reference to FIG. FIG. 4 shows the cross-sectional positional relationship of each component and is expressed on a scale that can be clearly shown.

  As shown in FIG. 4, the liquid crystal device 100 includes an element substrate 10 and a counter substrate 20 disposed to face the element substrate 10. As described above, the first base material 10a configuring the element substrate 10 is configured by, for example, a quartz substrate.

  As shown in FIG. 4, a lower light-shielding film 3c containing a material such as Al (aluminum), Ti (titanium), Cr (chromium), W (tungsten) is formed on the first base material 10a. ing. The lower light-shielding film 3c is planarly patterned in a lattice shape and defines an opening area of each pixel P. Note that the lower light-shielding film 3c may have conductivity and function as part of the scanning line 3a. A base insulating layer 11a made of a silicon oxide film or the like is formed on the first base material 10a and the lower light shielding film 3c.

  On the base insulating layer 11a, the TFT 30, the scanning line 3a, and the like are formed. The TFT 30 has, for example, an LDD (Lightly Doped Drain) structure, and includes a semiconductor layer 30a made of polysilicon (high-purity polycrystalline silicon), a gate insulating layer 11g formed on the semiconductor layer 30a, A gate electrode 30g made of a polysilicon film or the like formed on the gate insulating layer 11g. The scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type TFT 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the TFT 30 is formed as an N-type TFT.

  A first interlayer insulating layer 11b made of a silicon oxide film or the like is formed on the gate electrode 30g and the gate insulating layer 11g. A capacitive element 16 is provided on the first interlayer insulating layer 11b. Specifically, the first capacitor electrode 16a as the pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the TFT 30, and the capacitor line 3b (as the fixed potential side capacitor electrode). A part of the second capacitor electrode 16b) is disposed to face the dielectric film 16c, whereby the capacitor element 16 is formed.

  The dielectric film 16c is, for example, a silicon nitride film. The second capacitor electrode 16b (capacitor line 3b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. In addition to functioning as a pixel potential side capacitance electrode, the first capacitance electrode 16a relay-connects the pixel electrode 27 and the pixel electrode side source / drain region 30d (drain region) of the TFT 30 via contact holes CNT1, CNT3, and CNT4. It has the function to do.

  A data line 6a is formed on the capacitive element 16 via the second interlayer insulating layer 11c. The data line 6a is connected to the data line side source / drain of the semiconductor layer 30a through the contact hole CNT2 formed in the gate insulating layer 11g, the first interlayer insulating layer 11b, the dielectric film 16c, and the second interlayer insulating layer 11c. It is electrically connected to the region 30s (source region).

  A pixel electrode 27 is formed on the data line 6a via a third interlayer insulating layer 11d. The third interlayer insulating layer 11d is made of, for example, silicon oxide or nitride, and is subjected to a flattening process for flattening the convex portions on the surface generated by covering the region where the TFT 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating. A contact hole CNT4 is formed in the third interlayer insulating layer 11d.

  The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region 30d (drain region) of the semiconductor layer 30a by being connected to the first capacitor electrode 16a via the contact holes CNT4 and CNT3. The pixel electrode 27 is formed of a transparent conductive film such as an ITO film, for example.

On the third interlayer insulating layer 11d between the pixel electrode 27 and the adjacent pixel electrode 27, an alignment film 28 obtained by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ) is provided. On the alignment film 28, a liquid crystal layer 15 in which liquid crystal or the like is sealed in a space surrounded by the sealing material 14 (see FIGS. 1 and 2) is provided.

On the other hand, an insulating film 33 made of, for example, a PSG film (phosphorus-doped silicon oxide film) is provided on the second base material 20a (the liquid crystal layer 15 side). On the insulating film 33, the counter electrode 31 is provided over the entire surface. On the counter electrode 31, an alignment film 32 is formed by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ). The counter electrode 31 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 27 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the alignment films 28 and 32 in a state where no electric field is generated between the pixel electrode 27 and the counter electrode 31. The sealing material 14 is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the element substrate 10 and the counter substrate 20, and sets the distance between the element substrate 10 and the counter substrate 20 to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

<Configuration of alignment film and configuration of organic film in transmissive liquid crystal device>
FIG. 5 is a schematic cross-sectional view mainly showing the configuration of the inorganic alignment film and the configuration of the organic film in the liquid crystal device. Hereinafter, the configuration of the inorganic alignment film and the organic film will be described with reference to FIG. Note that FIG. 5 is illustrated in a simplified manner for easy explanation.

  As shown in FIG. 5, the liquid crystal device 100 includes an element substrate 10 and a counter substrate 20. A pixel electrode 27 is provided in the display region E on the first base material 10 a constituting the element substrate 10. A first alignment film having a columnar structure (column) formed by oblique deposition on the surface of the pixel electrode 27 and the surface of the first base material 10a on which the pixel electrode 27 is not provided. An inorganic alignment film 28 is provided.

  The columnar structures (not shown) are densely provided over the entire first base material 10a. These columnar structures are provided to be inclined with respect to the first base material 10a, and a pretilt angle is given to the liquid crystal molecules of the liquid crystal layer 15 by the inclination angle. Here, the pretilt angle refers to an angle formed by a direction perpendicular to the surface of the first substrate 10a and a major axis direction of liquid crystal molecules.

  A first organic film 28a is applied to the first inorganic alignment film 28 by surface treatment. The first organic film 28a is a surface treatment film formed using, for example, a silane coupling material. The surface treatment film contains a substance generated from a silane coupling material.

  A counter electrode 31 is provided on the second base material 20 a (the liquid crystal layer side) constituting the counter substrate 20. On the counter electrode 31, a second inorganic alignment film 32 is provided as a second alignment film formed by oblique deposition so as to cover the counter electrode 31. On the second inorganic alignment film 32, a second organic film 32a is provided by surface treatment. Similar to the first organic film 28a, the second organic film 32a is a surface treatment film formed using a silane coupling material.

  In the case of the transmissive liquid crystal device 100 as in the present embodiment, the coverage of the second organic film 32a is given to be larger than the coverage of the first organic film 28a.

According to the research of the present inventors, the difference in the coverage ratio (contact angle) of the organic films 28a and 32a suitable for correcting the Vcom shift from the difference in aperture ratio between the area of the pixel electrode 27 and the area of the counter electrode 31. The difference can be expressed by the following empirical formula:
Contact angle difference (deg) = k × aperture ratio difference (%)
0.3 ≦ k ≦ 0.7
Aperture ratio difference = (1−area of pixel electrode 27 / area of counter electrode 31) × 100
However, the area of the pixel electrode 27 and the area of the counter electrode 31 are both per pixel, and the contact angle difference is calculated based on the contact angle with water.
As the coverage increases, the contact angle increases. Specifically, when the coverage is 100%, the contact angle with water is about 90 ° to 100 °.

  For example, when a lot of negative ions adhere to the first organic film 28a, a large amount of negative ions adheres to the second organic film 32a by increasing the coverage of the second organic film 32a based on the above formula. Can be made. As a result, it is possible to correct the deviation in the amount of ions adsorbed on the first inorganic alignment film 28 and the second inorganic alignment film 32, and the negative is caused between the first inorganic alignment film side and the second inorganic alignment film side. The amount of ions can be made substantially the same. As a result, it is possible to suppress the Vcom shift, and it is possible to suppress the display quality from being deteriorated such as the occurrence of flicker.

<Method for manufacturing liquid crystal device>
FIG. 6 is a flowchart showing a manufacturing method of the liquid crystal device in the order of steps. 7 and 8 are schematic cross-sectional views showing a part of the manufacturing method of the liquid crystal device in the order of steps. FIG. 9 is a schematic diagram showing the structure of a CVD apparatus. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

  First, a manufacturing method on the element substrate 10 side will be described. First, in step S11, the TFT 30 is formed on the first base material 10a made of a quartz substrate or the like. Specifically, first, a lower light-shielding film 3c (see FIG. 4) made of aluminum or the like is formed on the first base material 10a. Thereafter, a base insulating layer 11a made of a silicon oxide film or the like is formed using a known film forming technique.

  Next, the TFT 30 is formed on the base insulating layer 11a. Specifically, the TFT 30 is formed using a well-known film formation technique, photolithography technique, and etching technique. Hereinafter, the layer in which these are formed will be simply referred to as a circuit layer.

  In step S12, the pixel electrode 27 is formed. Specifically, as shown in FIG. 7A, on a circuit layer (not shown) including the TFT 30 or the like, using a well-known film forming technique, a photolithography technique, and an etching technique, ITO or the like is used. A pixel electrode 27 is formed.

In step S13, the first inorganic alignment film 28 is formed. Specifically, as shown in FIG. 7B, a first inorganic alignment film 28 is formed so as to cover the pixel electrode 27. As a manufacturing method of the first inorganic alignment film 28, for example, an oblique deposition method in which an inorganic material such as silicon oxide (SiO ₂ ) is obliquely deposited is used.

  In step S <b> 14, the first organic film 28 a is applied to the first inorganic alignment film 28. Specifically, as shown in FIG. 7C, chemical vapor deposition (hereinafter referred to as CVD) is used. Hereinafter, the structure of the CVD apparatus 70 and the manufacturing method of the first organic film 28a will be described with reference to FIG.

  As shown in FIG. 9, first, the element substrate 10 and the container 72 containing the liquid silane coupling material are placed in a sealed chamber 71 such as a vacuum chamber of the CVD apparatus 70. Next, the container 72 is heated by the heater 73 to vaporize the silane coupling material. Thereby, as shown in FIG. 7C, the first organic film 28 a is provided on the surface of the first inorganic alignment film 28.

  That is, the silanol group on the surface of the first inorganic alignment film 28 reacts with the hydrolysis group of the silane coupling material, and the substance generated from the silane coupling material adheres to form the first organic film 28a. Thus, the element substrate 10 side is completed.

  Next, a manufacturing method on the counter substrate 20 side will be described. First, in step S21, as shown in FIG. 8A, on the second base material 20a that transmits light such as a glass substrate, a counter electrode is formed using a well-known film forming technique, photolithography technique, and etching technique. 31 is formed.

  In step S <b> 22, the second inorganic alignment film 32 is formed on the counter electrode 31. Specifically, as shown in FIG. 8B, for example, it is formed using an oblique vapor deposition method in the same manner as the first inorganic alignment film 28.

  In step S23, the second organic film 32a is formed so that the coverage is higher than the coverage of the first organic film 28a. Specifically, as shown in FIG. 8C, the same chemical vapor deposition method as that for the element substrate 10 is used. First, the counter substrate 20 and the container 72 containing the liquid silane coupling material are placed in a sealed chamber 71 such as a vacuum chamber of the CVD apparatus 70 (see FIG. 9). Next, the container 72 is heated by the heater 73 to vaporize the silane coupling material.

  At this time, for example, the conditions such as the concentration of the silane coupling material, the heating temperature of the heater 73, and the treatment time are changed from the surface treatment conditions of the first organic film 28a. Thereby, the second organic film 32 a is provided on the surface of the second inorganic alignment film 32.

  Thus, the counter substrate 20 side is completed. Next, a method for bonding the element substrate 10 and the counter substrate 20 will be described.

  In step S <b> 31, the sealing material 14 is applied on the element substrate 10. Specifically, for example, the relative positional relationship between the element substrate 10 and a dispenser (also possible with a discharge device) is changed, so that the periphery of the display area E in the element substrate 10 (so as to surround the display area E). The sealing material 14 is applied.

  Examples of the sealing material 14 include an ultraviolet curable epoxy resin. In addition, it is not limited to photocurable resins, such as an ultraviolet-ray, You may make it use a thermosetting resin. Further, the sealing material 14 includes, for example, a gap material such as a spacer for setting a distance (gap or cell gap) between the element substrate 10 and the counter substrate 20 to a predetermined value.

  In step S <b> 32, the liquid crystal is dropped inside the seal material 14. Specifically, the liquid crystal is dropped onto an area surrounded by the sealing material 14 (ODF (One Drop Fill) method). As a dropping method, for example, an ink jet head can be used. Further, it is desirable that the liquid crystal is dropped on the central portion of the region (display region E) surrounded by the sealing material 14.

  In step S33, the element substrate 10 and the counter substrate 20 are bonded together. Specifically, the element substrate 10 and the counter substrate 20 are bonded together via the sealing material 14 applied to the element substrate 10. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 10 and 20. Thus, the liquid crystal device 100 is completed.

<Configuration of electronic equipment>
Next, a projection type display device as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 10 is a schematic diagram showing a configuration of a projection display device including the above-described liquid crystal device.

  As shown in FIG. 10, the projection display apparatus 1000 of the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, two dichroic mirrors 1104 and 1105 as light separation elements, and three Reflective mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a cross dichroic as a light combiner A prism 1206 and a projection lens 1207 are provided.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205. Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204. The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206.

  In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  Since the liquid crystal light valves 1210, 1220, and 1230 are used in such a projection display device 1000, high reliability can be obtained.

  The electronic device on which the liquid crystal device 100 is mounted includes a projection display device 1000, a head-up display (HUD), a head-mounted display (HMD), a smartphone, an EVF (Electrical View Finder), a mobile mini projector, an electronic device. It can be used for various electronic devices such as books, mobile phones, mobile computers, digital cameras, digital video cameras, displays, in-vehicle devices, audio devices, exposure devices, and lighting devices.

  As described above in detail, according to the liquid crystal device 100, the method for manufacturing the liquid crystal device 100, and the electronic apparatus of the first embodiment, the following effects can be obtained.

  (1) According to the liquid crystal device 100 of the first embodiment and the method for manufacturing the liquid crystal device 100, the surface treatment is performed so that the coverage of the second organic film 32a is increased. When the electrode materials are the same and there is a difference in the area of the electrodes, specifically, even when the opening area of the counter electrode 31 is larger than that of the pixel electrode 27, the pixel electrode 27 and the liquid crystal layer The charge transfer amount between the counter electrode 31 and the liquid crystal layer 15 can be made substantially equal. In other words, it is possible to correct a deviation in the amount of ions adsorbed on the first inorganic alignment film 28 and the second inorganic alignment film 32. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  (2) According to the method for manufacturing the liquid crystal device 100 of the first embodiment, since the alignment film is an inorganic alignment film and silanol groups exist on the surface of the inorganic alignment film, the hydrolysis of the silanol groups and the silane coupling material. It becomes possible to react with a group, and a substance generated from a silane coupling material can be applied to the surfaces of the first inorganic alignment film 28 and the second inorganic alignment film 32. As a result, it is possible to perform surface treatment on the first inorganic alignment film 28 and the second inorganic alignment film 32, and display quality can be prevented from deteriorating.

  (3) According to the electronic apparatus of the first embodiment, since the liquid crystal device 100 is provided, it is possible to provide an electronic apparatus that can improve display characteristics.

(Second Embodiment)
<Configuration of alignment film and configuration of organic film in transmissive liquid crystal device>
FIG. 11 is a schematic cross-sectional view showing the structure of the liquid crystal device of the second embodiment. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG.

  The liquid crystal device 200 according to the second embodiment is a portion where the combination of long-chain alkyl and short-chain alkyl is changed as a specific method for making the coverage different from that of the liquid crystal device 100 according to the first embodiment described above. The other parts are almost the same. Therefore, in the second embodiment, portions different from the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  Specifically, in the liquid crystal device 200 of the second embodiment, the structure from the first base material 10a to the first inorganic alignment film 28 in the element substrate 10 is the same as that of the first embodiment. The structure from the second base material 20a to the second inorganic alignment film 32 in the counter substrate 20 is the same as that in the first embodiment.

  As shown in FIG. 11, in the element substrate 10, the surface of the first inorganic alignment film 28 is provided with a long-chain alkyl 28b that constitutes the first organic film 28a. In the counter substrate 20, a long chain alkyl 32 b and a short chain alkyl 32 c constituting the second organic film 32 a are formed on the surface of the second inorganic alignment film 32. That is, it is formed so that the coverage of the second organic film 32a is larger than the coverage of the first organic film 28a.

  The long-chain alkyls 28b and 32b are alkyl groups having a long-chain organic functional group. The short chain alkyl 32c refers to an alkyl group having a short chain organic functional group. The long-chain alkyls 28b and 32b tend to give a pretilt angle to the liquid crystal molecules. Moreover, the short chain alkyl 32c tends to increase the coverage.

  Thus, by providing the long-chain alkyl 28b on the element substrate 10 side and providing both the long-chain alkyl 32b and the short-chain alkyl 32c on the counter substrate 20 side, the second organic film 32a on the counter substrate 20 side is provided. The coverage can be increased as compared with the coverage of the first organic film 28a on the element substrate 10 side.

  Therefore, as in the case of the transmissive liquid crystal device 200, when the electrode materials are the same and there is a difference in electrode area, specifically, when the opening area of the counter electrode 31 is larger than that of the pixel electrode 27. However, the amount of charge transfer between the pixel electrode 27 and the liquid crystal layer 15 and the amount of charge transfer between the counter electrode 31 and the liquid crystal layer 15 can be made substantially equal. In other words, the deviation of the amount of ions adsorbed on the alignment films 28 and 32 can be corrected. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

<Method for manufacturing liquid crystal device>
12 and 13 are schematic cross-sectional views illustrating a part of the manufacturing method of the liquid crystal device according to the second embodiment in the order of steps. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS. Note that portions different from the method of manufacturing the liquid crystal device of the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  First, in the step shown in FIG. 12A, the pixel electrode 27 is formed on the first base material 10a. Next, as shown in FIG. 12B, a first inorganic alignment film 28 is formed on the pixel electrode 27.

  Next, in the step shown in FIG. 12C, the first organic film 28 a having the long-chain alkyl 28 b is applied to the first inorganic alignment film 28. As shown in FIG. 9, the method of applying the long-chain alkyl 28b to the first inorganic alignment film 28 is as follows. First, the device substrate 10 and a container 72 containing a long-chain silane coupling material having a liquid long-chain alkyl 28b, Is put into a sealed chamber 71 such as a vacuum chamber of the CVD apparatus 70.

  Next, the container 72 is heated by the heater 73 to vaporize the long chain silane coupling material. Thereby, as shown in FIG. 12C, the long-chain alkyl 28 b is imparted to the surface of the first inorganic alignment film 28.

  That is, the silanol group on the surface of the first inorganic alignment film 28 reacts with the hydrolyzable group of the long-chain silane coupling material, and the long-chain silane coupling material adheres, so that the first inorganic alignment film 28 has a straight chain on the surface. The long alkyl chain 28b of the alkyl chain is provided. Thus, the element substrate 10 side is completed.

  Next, in the step shown in FIG. 13A, the counter electrode 31 is formed on the second base material 20a. Next, in the step shown in FIG. 13B, the second inorganic alignment film 32 is formed on the counter electrode 31.

  Next, in the step shown in FIG. 13C, the second organic film 32a is applied to the second inorganic alignment film 32 so that the coverage is higher than the coverage of the first organic film 28a. Specifically, the chemical vapor deposition method is used similarly to the element substrate 10.

  First, as shown in FIG. 9, a counter substrate 20 and a container 72 containing a long-chain silane coupling material having a liquid long-chain alkyl 32 b are placed in a sealed chamber 71 such as a vacuum chamber of a CVD apparatus 70. Next, the container 72 is heated by the heater 73 to vaporize the long chain silane coupling material. Thereby, as shown in FIG. 13C, the long-chain alkyl 32 b is imparted to the surface of the second inorganic alignment film 32.

  Next, a container 72 containing a short-chain silane coupling material having a liquid short-chain alkyl 32 c is placed in the sealed chamber 71. Then, the container 72 is heated by the heater 73 to vaporize the short chain silane coupling material.

  Thereby, as shown in FIG.13 (d)), the short chain alkyl 32c is provided to the surface of the 2nd inorganic alignment film 32. FIG. That is, both the long chain alkyl 32 b and the short chain alkyl 32 c are provided on the surface of the second inorganic alignment film 32. Thus, the counter substrate 20 side is completed.

  Thereafter, similarly to the first embodiment, the element substrate 10 and the counter substrate 20 are bonded together. As described above, the liquid crystal device 200 of the second embodiment is completed.

  As described above in detail, according to the liquid crystal device 200 of the second embodiment and the method for manufacturing the liquid crystal device 200, the following effects can be obtained.

  (4) According to the liquid crystal device 200 of the second embodiment and the method for manufacturing the liquid crystal device 200, the first inorganic alignment film 28 is provided with the long-chain alkyl 28 b, and the second inorganic alignment film 32 is provided with the long-chain alkyl 32 b By providing both of the short-chain alkyls 32c, the coverage of the second organic film 32a on the counter substrate 20 side can be increased as compared with the coverage of the first organic film 28a on the element substrate 10 side. . Therefore, even when the opening area of the counter electrode 31 is larger than that of the pixel electrode 27 as in the transmissive liquid crystal device 200, the charge transfer amount between the pixel electrode 27 and the liquid crystal layer 15, The amount of charge transfer with the liquid crystal layer 15 can be made substantially equal. In other words, the deviation of the amount of ions adsorbed on the alignment films 28 and 32 can be corrected. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the present invention is not limited to the transmissive liquid crystal devices 100 and 200, and may be applied to the reflective liquid crystal devices 300 and 400. The structure in the case of the reflective liquid crystal devices 300 and 400 will be described below. 14 and 15 are schematic cross-sectional views showing structures in the case where the coverage is changed between the element substrate 10 and the counter substrate 20 in the reflective liquid crystal devices 300 and 400.

  The reflective liquid crystal device 300 shown in FIG. 14 is formed so that the coverage of the second organic film 32a on the counter substrate 20 side is smaller than the coverage of the first organic film 28a on the element substrate 10 side. ing. In the reflective liquid crystal device 300, the pixel electrode 27 is made of a metal material (for example, aluminum).

According to the research of the present inventor, the coverage difference (contact angle difference) between the organic films 28a and 32a suitable for correcting the Vcom shift is calculated from the work function difference between the pixel electrode 27 and the counter electrode 31 as follows. This can be expressed by an empirical formula.
Contact angle difference (deg) = k × work function difference (eV)
50 ≦ k ≦ 150
However, the contact angle difference is the difference between the contact angle between the water of the first organic film and the water of the second organic film, and the work function difference is the difference between the work function of the counter electrode and the work function of the pixel electrode. It is. In addition,
The work function of the pixel electrode 27 is 4.1 to 4.3 (eV),
The work function of the counter electrode 31 is 4.6 to 4.9 (eV).

  As in the case of the reflective liquid crystal device 300, the first organic film is formed even when the electrode material is different, specifically, when the pixel electrode 27 is made of a metal material and the counter electrode 31 is made of ITO. By making the coverage of 28a larger than that of the second organic film 32a based on the above calculation formula, it is possible to attach more negative ions to the first organic film 28a. As a result, it is possible to correct the bias of the amount of ions adsorbed on the first inorganic alignment film 28 and the second inorganic alignment film 32, and negative ions on the first inorganic alignment film side and the second inorganic alignment film side. Can be made substantially the same. As a result, it is possible to suppress the Vcom shift, and it is possible to suppress the display quality from being deteriorated such as the occurrence of flicker.

  In the reflective liquid crystal device 400 shown in FIG. 15, both the long-chain alkyl 28b and the short-chain alkyl 28c are provided to the first inorganic alignment film 28 on the element substrate 10 side. Further, only the long-chain alkyl 32b is given to the second inorganic alignment film 32 on the counter substrate 20 side.

  According to the liquid crystal device 400, since the coverage of the first organic film 28 a is large as in the case of the liquid crystal device 300, even when the pixel electrode 27 is made of a metal material and the counter electrode 31 is made of ITO, the pixel electrode 27. The amount of charge transfer between the liquid crystal layer 15 and the amount of charge transfer between the counter electrode 31 and the liquid crystal layer 15 can be made substantially equal. In other words, the deviation of the amount of ions adsorbed on the alignment films 28 and 32 can be corrected. Thereby, it can suppress that display quality falls, such as the occurrence of flicker.

(Modification 2)
As described above, the present invention is not limited to application to the active matrix liquid crystal device 100, and may be applied to, for example, a simple matrix liquid crystal device.

(Modification 3)
As described above, the liquid crystal device 100 is not limited to being applied as an electro-optical device, and may be applied to, for example, an organic EL device, a plasma display, electronic paper (EPD), or the like.

  3a ... scanning line, 3b ... capacitance line, 3c ... lower light-shielding film, CNT1 to CNT4 ... contact hole, 6a ... data line, 10 ... element substrate, 10a ... first substrate, 11a ... underlying insulating layer, 11b ... first 1st interlayer insulation layer, 11c ... 2nd interlayer insulation layer, 11d ... 3rd interlayer insulation layer, 11g ... Gate insulation layer, 14 ... Sealing material, 15 ... Liquid crystal layer as electro-optic layer, 16 ... Capacitance element, 16a ... 1st 1 capacitive electrode, 16b ... 2nd capacitive electrode, 16c ... dielectric film, 18 ... light shielding film, 20 ... counter substrate, 20a ... 2nd base material, 22 ... data line drive circuit, 24 ... scanning line drive circuit, 25 ... Inspection circuit 26... Vertical conduction portion 27... Pixel electrode 28. First inorganic alignment film as first alignment film 28 a. First organic film 28 b long alkyl alkyl 28 c short alkyl alkyl 29 wiring 30 ... TFT, 30a ... Semiconductor layer, 0c ... Channel region, 30d ... Pixel electrode side source / drain region, 30d1 ... Pixel electrode side LDD region, 30g ... Gate electrode, 30s ... Data line side source / drain region, 30s1 ... Data line side LDD region, 31 ... Counter electrode, 32 2nd inorganic alignment film as second alignment film, 32a ... 2nd organic film, 32b ... long chain alkyl, 32c ... short chain alkyl, 33 ... insulating film, 61 ... external connection terminal, 70 ... CVD apparatus, 71 ... Sealed chamber, 72 ... Container, 73 ... Heater, 100, 200 ... Transmission type liquid crystal device, 300, 400 ... Reflection type liquid crystal device, 1000 ... Projection type display device, 1100 ... Polarized illumination device, 1101 ... Lamp unit, 1102 ... Integrator lens, 1103 ... Polarization conversion element, 1104, 1105 ... Dichroic mirror, 1106, 110 , 1108 ... reflecting mirror, 1201,1202,1203,1204,1205 ... relay lens, 1206 ... cross dichroic prism, 1207 ... projection lens, 1210, 1220 ... liquid crystal light valves, 1300 ... screen.

Claims (7)

An element substrate;
A counter substrate disposed so as to oppose the element substrate via a sealing material;
An electro-optic layer enclosed in a region surrounded by the sealing material;
A pixel electrode disposed between the element substrate and the electro-optic layer;
A counter electrode disposed between the counter substrate and the electro-optic layer;
A first alignment film disposed to cover the pixel electrode;
A second alignment film disposed so as to cover the counter electrode;
A first organic film disposed to cover the first alignment film;
A second organic film disposed to cover the second alignment film;
Including
Compared to the contact angle of the first organic film with water, the contact angle of the second organic film with water is large,
The contact angle difference, which is the difference between the contact angle between the water of the second organic film and the water of the first organic film, the area of the pixel electrode, and the area of the counter electrode is as follows. An electro-optical device satisfying the formula:
Contact angle difference (deg) = k × (1−area of pixel electrode per pixel / area of counter electrode per pixel) × 100 (%) (provided that 0.3 ≦ k ≦ 0.7) An element substrate;
A counter substrate disposed so as to oppose the element substrate via a sealing material;
An electro-optic layer enclosed in a region surrounded by the sealing material;
A pixel electrode disposed between the element substrate and the electro-optic layer;
A counter electrode disposed between the counter substrate and the electro-optic layer;
A first alignment film disposed to cover the pixel electrode;
A second alignment film disposed so as to cover the counter electrode;
A first organic film disposed to cover the first alignment film;
A second organic film disposed to cover the second alignment film;
Including
Compared with the work function of the pixel electrode, the work function of the counter electrode is large,
A contact which is a difference between a work function difference which is a difference between a work function of the pixel electrode and a work function of the counter electrode, and a contact angle between water of the first organic film and water of the second organic film. An electro-optical device characterized in that the angular difference satisfies the following relational expression.
Contact angle difference (deg) = k × work function difference (eV) (however, 50 ≦ k ≦ 150) The electro-optical device according to claim 1 or 2,
The first alignment film and the second alignment film are inorganic alignment films,
The electro-optical device, wherein the first organic film and the second organic film contain a substance generated from a silane coupling material. Performing a first surface treatment on the first alignment film disposed so as to cover the pixel electrode to form a first organic film;
Performing a second surface treatment on the second alignment film disposed to cover the counter electrode to form a second organic film;
Including
Compared to the contact angle of the first organic film with water, the contact angle of the second organic film with water is large,
The contact angle difference, which is the difference between the contact angle between the water of the second organic film and the water of the first organic film, the area of the pixel electrode, and the area of the counter electrode is as follows. An electro-optical device manufacturing method characterized by satisfying the formula:
Contact angle difference (deg) = k × (1−area of pixel electrode per pixel / area of counter electrode per pixel) × 100 (%) (provided that 0.3 ≦ k ≦ 0.7) Performing a first surface treatment on the first alignment film disposed so as to cover the pixel electrode to form a first organic film;
Performing a second surface treatment on the second alignment film disposed to cover the counter electrode to form a second organic film;
Including
Compared with the work function of the pixel electrode, the work function of the counter electrode is large,
A contact which is a difference between a work function difference which is a difference between a work function of the pixel electrode and a work function of the counter electrode, and a contact angle between water of the first organic film and water of the second organic film. The method of manufacturing an electro-optical device, wherein the angular difference satisfies the following relational expression.
Contact angle difference (deg) = k × work function difference (eV) (however, 50 ≦ k ≦ 150) A method of manufacturing the electro-optical device according to claim 4 or 5,
The first alignment film and the second alignment film are inorganic alignment films,
The method of manufacturing an electro-optical device, wherein the first surface treatment and the second surface treatment are silane coupling treatments.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 3.

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