JP2012180261A - 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 - Google Patents
導電性ペースト及び該導電性ペーストを用いた太陽電池素子 Download PDFInfo
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- JP2012180261A JP2012180261A JP2011270958A JP2011270958A JP2012180261A JP 2012180261 A JP2012180261 A JP 2012180261A JP 2011270958 A JP2011270958 A JP 2011270958A JP 2011270958 A JP2011270958 A JP 2011270958A JP 2012180261 A JP2012180261 A JP 2012180261A
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- conductive paste
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- glass frit
- solar cell
- semiconductor silicon
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- 239000011521 glass Substances 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 4
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000001856 Ethyl cellulose Substances 0.000 description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 5
- 229920001249 ethyl cellulose Polymers 0.000 description 5
- 235000019325 ethyl cellulose Nutrition 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 3
- 229940088601 alpha-terpineol Drugs 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 125000005396 acrylic acid ester group Chemical group 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 polymethylstyrene Polymers 0.000 description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Chemical class 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Chemical class 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
半導体シリコン太陽電池に形成される電極として使用可能な鉛を含まない導電性ペーストを得ることを目的とした。
【解決手段】
半導体シリコン基板を用いる太陽電池用の導電性ペーストであって、該導電性ペーストに含まれるガラスフリットの組成は、実質的に鉛成分を含まず、質量%で
SiO2を1〜20、B2O3を5〜30、Al2O3を0〜10、ZnOを5〜35、RO(MgO、CaO、SrO、及びBaOからなる群から選ばれる少なくとも1種の合計)を5〜30、R2O(Li2O、Na2O、及びK2Oからなる群から選ばれる少なくとも1種の合計)を0.1〜6、Bi2O3を10〜60、を含むことを特徴とする導電性ペースト。
【選択図】図1
Description
まず、ガラス粉末は、実施例に記載した所定組成となるように各種無機原料を秤量、混合して原料バッチを作製した。この原料バッチを白金ルツボに投入し、電気加熱炉内で1000〜1300℃、1〜2時間で加熱溶融して表1の実施例1〜6、表2の比較例1〜5に示す組成のガラスを得た。ガラスの一部は型に流し込み、ブロック状にして熱膨張係数測定用に供した。残余のガラスは急冷双ロール成形機にてフレーク状とし、粉砕装置で平均粒径1〜10μm、最大粒径30μm未満の粉末状に整粒した。
無鉛低融点ガラス組成および、各種試験結果を表に示す。
2 n型半導体シリコン層
3 反射防止膜
4 表面電極
5 アルミニウム電極層
6 BSF層
7 P+層
Claims (6)
- 半導体シリコン基板を用いる太陽電池用の導電性ペーストであって、該導電性ペーストはガラスフリットを含み、該ガラスフリットの組成は、実質的に鉛成分を含まず、質量%で
SiO2を1〜20、
B2O3を5〜30、
Al2O3を0〜10、
ZnOを5〜35、
RO(MgO、CaO、SrO、及びBaOからなる群から選ばれる少なくとも1種の合計)を5〜30、
R2O(Li2O、Na2O、及びK2Oからなる群から選ばれる少なくとも1種の合計)を0.1〜6、
Bi2O3を10〜60、
を含むことを特徴とする導電性ペースト。 - 前記ガラスフリットは、30℃〜300℃における熱膨張係数が(70〜110)×10−7/℃、軟化点が450℃以上600℃以下であることを特徴とする請求項1に記載の導電性ペースト。
- 前記導電性ペーストはアルミニウム粉末を有することを特徴とする請求項1又は請求項2に記載の導電性ペースト。
- 前記ガラスフリットの組成において、R2Oとして少なくともK2Oを含むことを特徴とする請求項1乃至請求項3のいずれか1項に記載の導電性ペースト。
- 前記ガラスフリットの組成において、ROとして少なくともBaOを含むことを特徴とする請求項1乃至請求項4のいずれか1項に記載の導電性ペースト。
- 請求項1乃至請求項5のいずれか1項に記載の導電性ペーストを焼成させたアルミニウム電極層を有することを特徴とする太陽電池素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011270958A JP5888493B2 (ja) | 2011-02-10 | 2011-12-12 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
KR1020137020740A KR101455019B1 (ko) | 2011-02-10 | 2012-01-31 | 도전성 페이스트 및 그 도전성 페이스트를 사용한 태양전지 소자 |
PCT/JP2012/052055 WO2012108290A1 (ja) | 2011-02-10 | 2012-01-31 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
CN201280005074.3A CN103314414B (zh) | 2011-02-10 | 2012-01-31 | 导电性糊剂及使用了该导电性糊剂的太阳能电池元件 |
TW101104460A TWI497739B (zh) | 2011-02-10 | 2012-02-10 | A conductive paste and a solar cell element using the conductive paste |
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JP2011026781 | 2011-02-10 | ||
JP2011026781 | 2011-02-10 | ||
JP2011270958A JP5888493B2 (ja) | 2011-02-10 | 2011-12-12 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
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JP2012180261A true JP2012180261A (ja) | 2012-09-20 |
JP5888493B2 JP5888493B2 (ja) | 2016-03-22 |
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Country Status (5)
Country | Link |
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JP (1) | JP5888493B2 (ja) |
KR (1) | KR101455019B1 (ja) |
CN (1) | CN103314414B (ja) |
TW (1) | TWI497739B (ja) |
WO (1) | WO2012108290A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015041741A (ja) * | 2013-08-23 | 2015-03-02 | 旭硝子株式会社 | 電極形成用ガラス粉末、電極形成用導電ペーストおよび太陽電池 |
JP2015115400A (ja) * | 2013-12-10 | 2015-06-22 | 東洋アルミニウム株式会社 | 導電性アルミニウムペースト |
JP2020075843A (ja) * | 2018-11-09 | 2020-05-21 | Agc株式会社 | ガラス、ガラス粉末、導電ペーストおよび太陽電池 |
JP2020198380A (ja) * | 2019-06-04 | 2020-12-10 | Agc株式会社 | ガラス組成物、ガラス組成物の製造方法、導電ペースト、及び太陽電池 |
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CN103440899B (zh) * | 2013-08-15 | 2015-10-07 | 广东风华高新科技股份有限公司 | 银电极浆料 |
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KR20170108577A (ko) * | 2016-03-18 | 2017-09-27 | 대주전자재료 주식회사 | 태양전지용 무연 도전 페이스트 |
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CN109994247A (zh) * | 2017-12-29 | 2019-07-09 | 白金光学科技(苏州)有限公司 | 一种导电浆料 |
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US7176152B2 (en) * | 2004-06-09 | 2007-02-13 | Ferro Corporation | Lead-free and cadmium-free conductive copper thick film pastes |
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- 2012-01-31 CN CN201280005074.3A patent/CN103314414B/zh not_active Expired - Fee Related
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JP2015041741A (ja) * | 2013-08-23 | 2015-03-02 | 旭硝子株式会社 | 電極形成用ガラス粉末、電極形成用導電ペーストおよび太陽電池 |
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JP2020075843A (ja) * | 2018-11-09 | 2020-05-21 | Agc株式会社 | ガラス、ガラス粉末、導電ペーストおよび太陽電池 |
JP7088811B2 (ja) | 2018-11-09 | 2022-06-21 | Agc株式会社 | ガラス、ガラス粉末、導電ペーストおよび太陽電池 |
JP2020198380A (ja) * | 2019-06-04 | 2020-12-10 | Agc株式会社 | ガラス組成物、ガラス組成物の製造方法、導電ペースト、及び太陽電池 |
JP7444552B2 (ja) | 2019-06-04 | 2024-03-06 | Agc株式会社 | ガラス組成物、ガラス組成物の製造方法、導電ペースト、及び太陽電池 |
Also Published As
Publication number | Publication date |
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CN103314414A (zh) | 2013-09-18 |
KR20130121933A (ko) | 2013-11-06 |
TW201242060A (en) | 2012-10-16 |
KR101455019B1 (ko) | 2014-10-28 |
TWI497739B (zh) | 2015-08-21 |
CN103314414B (zh) | 2015-09-16 |
JP5888493B2 (ja) | 2016-03-22 |
WO2012108290A1 (ja) | 2012-08-16 |
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