JP2012146727A - 記憶素子及び記憶装置 - Google Patents

記憶素子及び記憶装置 Download PDF

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Publication number
JP2012146727A
JP2012146727A JP2011001921A JP2011001921A JP2012146727A JP 2012146727 A JP2012146727 A JP 2012146727A JP 2011001921 A JP2011001921 A JP 2011001921A JP 2011001921 A JP2011001921 A JP 2011001921A JP 2012146727 A JP2012146727 A JP 2012146727A
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JP
Japan
Prior art keywords
layer
magnetization
storage
memory
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011001921A
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English (en)
Japanese (ja)
Other versions
JP2012146727A5 (enExample
Inventor
Kazuhiro Bessho
和宏 別所
Masakatsu Hosomi
政功 細見
Hiroyuki Omori
広之 大森
Yutaka Higo
豊 肥後
Kazuaki Yamane
一陽 山根
Hiroyuki Uchida
裕行 内田
Tetsuya Asayama
徹哉 浅山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011001921A priority Critical patent/JP2012146727A/ja
Priority to TW100143789A priority patent/TWI530945B/zh
Priority to US13/334,351 priority patent/US9147455B2/en
Priority to KR20110145822A priority patent/KR20120080532A/ko
Priority to CN2011104613326A priority patent/CN102592657A/zh
Publication of JP2012146727A publication Critical patent/JP2012146727A/ja
Publication of JP2012146727A5 publication Critical patent/JP2012146727A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2011001921A 2011-01-07 2011-01-07 記憶素子及び記憶装置 Pending JP2012146727A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011001921A JP2012146727A (ja) 2011-01-07 2011-01-07 記憶素子及び記憶装置
TW100143789A TWI530945B (zh) 2011-01-07 2011-11-29 Memory elements and memory devices
US13/334,351 US9147455B2 (en) 2011-01-07 2011-12-22 Storage element having laminated storage layer including magnetic layer and conductive oxide and storage device including the storage element
KR20110145822A KR20120080532A (ko) 2011-01-07 2011-12-29 기억 소자 및 기억 장치
CN2011104613326A CN102592657A (zh) 2011-01-07 2011-12-30 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011001921A JP2012146727A (ja) 2011-01-07 2011-01-07 記憶素子及び記憶装置

Publications (2)

Publication Number Publication Date
JP2012146727A true JP2012146727A (ja) 2012-08-02
JP2012146727A5 JP2012146727A5 (enExample) 2014-02-20

Family

ID=46454621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011001921A Pending JP2012146727A (ja) 2011-01-07 2011-01-07 記憶素子及び記憶装置

Country Status (5)

Country Link
US (1) US9147455B2 (enExample)
JP (1) JP2012146727A (enExample)
KR (1) KR20120080532A (enExample)
CN (1) CN102592657A (enExample)
TW (1) TWI530945B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038421A (ja) * 2011-08-10 2013-02-21 Samsung Electronics Co Ltd 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置
JP2014072394A (ja) * 2012-09-28 2014-04-21 Sony Corp 記憶素子、記憶装置、磁気ヘッド
JP2014179447A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 磁気記憶素子

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012235015A (ja) * 2011-05-06 2012-11-29 Sony Corp 記憶素子及び記憶装置
US8921961B2 (en) 2012-09-14 2014-12-30 Headway Technologies, Inc. Storage element for STT MRAM applications
US8786039B2 (en) * 2012-12-20 2014-07-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
US8796797B2 (en) * 2012-12-21 2014-08-05 Intel Corporation Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
KR102078850B1 (ko) 2013-03-15 2020-02-18 삼성전자 주식회사 자기 메모리 소자 및 이에 대한 정보 쓰기 방법
CN103280234B (zh) * 2013-05-28 2016-06-29 中国科学院苏州纳米技术与纳米仿生研究所 磁性随机存储器
US9059389B2 (en) 2013-06-06 2015-06-16 International Business Machines Corporation Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
US9059399B2 (en) 2013-06-06 2015-06-16 International Business Machines Corporation Magnetic materials with enhanced perpendicular anisotropy energy density for STT-RAM
US9087543B2 (en) 2013-06-06 2015-07-21 International Business Machines Corporation Spin torque MRAM having perpendicular magnetization with oxide interface
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
KR102235609B1 (ko) * 2014-12-08 2021-04-02 삼성전자주식회사 Mram 기반의 프레임 버퍼링 장치, 그 장치를 포함하는 디스플레이 구동 장치 및 디스플레이 장치
US9508367B1 (en) 2016-02-03 2016-11-29 International Business Machines Corporation Tunnel magnetoresistive sensor having conductive ceramic layers
JP6832818B2 (ja) * 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
US10541361B2 (en) * 2017-11-30 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory and manufacturing method thereof
GB2576174B (en) * 2018-08-07 2021-06-16 Ip2Ipo Innovations Ltd Memory
US11710707B2 (en) * 2020-03-26 2023-07-25 Shibaura Mechatronics Corporation Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
WO2009128485A1 (ja) * 2008-04-17 2009-10-22 ソニー株式会社 磁気メモリ素子の記録方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US8374025B1 (en) * 2007-02-12 2013-02-12 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP2008211058A (ja) * 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ及びその書き込み方法
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
US8223533B2 (en) * 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
US8772886B2 (en) * 2010-07-26 2014-07-08 Avalanche Technology, Inc. Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
JP5740878B2 (ja) * 2010-09-14 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
KR20130015929A (ko) * 2011-08-05 2013-02-14 에스케이하이닉스 주식회사 자기 메모리 소자 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
WO2009128485A1 (ja) * 2008-04-17 2009-10-22 ソニー株式会社 磁気メモリ素子の記録方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038421A (ja) * 2011-08-10 2013-02-21 Samsung Electronics Co Ltd 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置
JP2014072394A (ja) * 2012-09-28 2014-04-21 Sony Corp 記憶素子、記憶装置、磁気ヘッド
JP2014179447A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 磁気記憶素子

Also Published As

Publication number Publication date
TW201234361A (en) 2012-08-16
TWI530945B (zh) 2016-04-21
KR20120080532A (ko) 2012-07-17
US20120175717A1 (en) 2012-07-12
CN102592657A (zh) 2012-07-18
US9147455B2 (en) 2015-09-29

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