JP2012145908A - 回折格子の製造方法 - Google Patents
回折格子の製造方法 Download PDFInfo
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- JP2012145908A JP2012145908A JP2011151277A JP2011151277A JP2012145908A JP 2012145908 A JP2012145908 A JP 2012145908A JP 2011151277 A JP2011151277 A JP 2011151277A JP 2011151277 A JP2011151277 A JP 2011151277A JP 2012145908 A JP2012145908 A JP 2012145908A
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- diffraction grating
- grating
- blazed diffraction
- processing machine
- manufacturing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 238000003754 machining Methods 0.000 claims abstract description 13
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 12
- 229910004611 CdZnTe Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 16
- 239000010432 diamond Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 description 29
- 230000003746 surface roughness Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
Abstract
【解決手段】CdTeまたはCdZnTeの結晶材料からなるブレーズ型回折格子10の製造方法は、加工機20による機械加工によって被加工物Wの被加工面に複数の格子溝17を形成して前記ブレーズ型回折格子を形成するステップ(S150)と、形成ステップによって形成される各格子の三角形の断面形状の短辺11を有する面16が結晶方位である(110)面となるように加工機20に被加工物を搭載するステップ(S140)と、を有する。
【選択図】図2
Description
10 エシェル型回折格子(ブレーズ型回折格子)
11 短辺
22 ダイヤモンドバイト
16 短辺を有する面
17 格子溝
Claims (6)
- 入射光を回折させ、CdTeまたはCdZnTeの結晶材料からなるブレーズ型回折格子の製造方法であって、
加工機による機械加工よって被加工物の被加工面に複数の格子溝を形成して前記ブレーズ型回折格子を形成するステップと、
前記形成するステップによって形成される各格子を構成する面のうち前記入射光を最も多く受光する面が前記結晶の結晶方位である(110)面となるように前記加工機に前記被加工物を搭載するステップと、
を有することを特徴とするブレーズ型回折格子の製造方法。 - 前記入射光を最も多く受光する面は、各格子の三角形の断面形状の短辺を有する面であることを特徴とする請求項1に記載のブレーズ型回折格子の製造方法。
- 前記格子溝の開き角は90度であることを特徴とする請求項1または2に記載のブレーズ型回折格子の製造方法。
- 前記加工機はダイヤモンドバイトを有し、
前記形成するステップは、前記ダイヤモンドバイトを用いてシェーパー方式によって前記格子溝を形成することを特徴とする請求項1に記載のブレーズ型回折格子の製造方法。 - 前記ブレーズ型回折格子はイマージョン型回折格子であることを特徴とする請求項1に記載のブレーズ型回折格子の製造方法。
- 入射光を回折させ、CdTeまたはCdZnTeの結晶材料からなるブレーズ型回折格子の製造方法であって、
加工機による機械加工よって被加工物の被加工面に複数の格子溝を形成して前記ブレーズ型回折格子を形成するステップと、
前記形成するステップによって形成される各格子の三角形の断面形状の短辺を有する面が前記結晶の結晶方位である(110)面となるように前記加工機に前記被加工物を搭載するステップと、
を有することを特徴とするブレーズ型回折格子の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011151277A JP5864920B2 (ja) | 2010-12-20 | 2011-07-07 | 回折格子の製造方法 |
ES11009814T ES2427789T3 (es) | 2010-12-20 | 2011-12-13 | Método de fabricación de una rejilla de difracción en CdTe o CdZnTe |
EP11009814.2A EP2466346B1 (en) | 2010-12-20 | 2011-12-13 | Manufacturing method of diffraction grating in CdTe or CdZnTe |
EP13004129.6A EP2667228B1 (en) | 2010-12-20 | 2011-12-13 | Diffraction grating |
US13/330,748 US9678253B2 (en) | 2010-12-20 | 2011-12-20 | Manufacturing method of diffraction grating |
US15/590,427 US10168457B2 (en) | 2010-12-20 | 2017-05-09 | Manufacturing method of diffraction grating |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010282546 | 2010-12-20 | ||
JP2010282546 | 2010-12-20 | ||
JP2011151277A JP5864920B2 (ja) | 2010-12-20 | 2011-07-07 | 回折格子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012145908A true JP2012145908A (ja) | 2012-08-02 |
JP2012145908A5 JP2012145908A5 (ja) | 2014-03-27 |
JP5864920B2 JP5864920B2 (ja) | 2016-02-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011151277A Active JP5864920B2 (ja) | 2010-12-20 | 2011-07-07 | 回折格子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9678253B2 (ja) |
EP (2) | EP2667228B1 (ja) |
JP (1) | JP5864920B2 (ja) |
ES (1) | ES2427789T3 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014038158A (ja) * | 2012-08-13 | 2014-02-27 | Canon Inc | 反射型回折素子 |
JP2015121605A (ja) * | 2013-12-20 | 2015-07-02 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
JP2016173614A (ja) * | 2016-07-08 | 2016-09-29 | キヤノン株式会社 | 反射型回折素子 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5731811B2 (ja) * | 2010-12-15 | 2015-06-10 | キヤノン株式会社 | ブレーズ型回折格子の製造方法及びそのための型の製造方法 |
JP6032869B2 (ja) * | 2011-03-10 | 2016-11-30 | キヤノン株式会社 | ブレーズ型回折格子 |
JP6049320B2 (ja) | 2012-06-20 | 2016-12-21 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
JP6049319B2 (ja) * | 2012-06-20 | 2016-12-21 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
CN103499851B (zh) * | 2013-09-29 | 2015-06-10 | 清华大学深圳研究生院 | 一种闪耀凹面光栅制作方法 |
CN109407192A (zh) * | 2018-11-26 | 2019-03-01 | 中国科学院长春光学精密机械与物理研究所 | 一种光栅刻划机刻线位置测量光路的调整方法及其系统 |
CN110788710B (zh) * | 2019-10-16 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | 一种碲锌镉晶体表面磨抛装置 |
CN112372036B (zh) * | 2020-10-30 | 2023-05-23 | 东北林业大学 | 一种亚波长闪耀光栅结构的加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4475792A (en) * | 1982-07-27 | 1984-10-09 | The United States Of America As Represented By The Secretary Of The Navy | High resolution diffraction grating |
JP2003075622A (ja) * | 2001-09-05 | 2003-03-12 | Toshiba Corp | 回折格子、回折格子の加工方法及び光学要素 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946363B2 (ja) * | 1979-04-06 | 1984-11-12 | 日本電信電話株式会社 | 平面回折格子の製法 |
EP0007108B1 (en) * | 1978-07-18 | 1983-04-13 | Nippon Telegraph and Telephone Public Corporation | A method of manufacturing a diffraction grating structure |
US4376663A (en) * | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
JP5669434B2 (ja) * | 2009-05-09 | 2015-02-12 | キヤノン株式会社 | 回折素子及び回折素子の製造方法及びそれを用いた分光器 |
-
2011
- 2011-07-07 JP JP2011151277A patent/JP5864920B2/ja active Active
- 2011-12-13 EP EP13004129.6A patent/EP2667228B1/en active Active
- 2011-12-13 ES ES11009814T patent/ES2427789T3/es active Active
- 2011-12-13 EP EP11009814.2A patent/EP2466346B1/en active Active
- 2011-12-20 US US13/330,748 patent/US9678253B2/en active Active
-
2017
- 2017-05-09 US US15/590,427 patent/US10168457B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4475792A (en) * | 1982-07-27 | 1984-10-09 | The United States Of America As Represented By The Secretary Of The Navy | High resolution diffraction grating |
JP2003075622A (ja) * | 2001-09-05 | 2003-03-12 | Toshiba Corp | 回折格子、回折格子の加工方法及び光学要素 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014038158A (ja) * | 2012-08-13 | 2014-02-27 | Canon Inc | 反射型回折素子 |
JP2015121605A (ja) * | 2013-12-20 | 2015-07-02 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
JP2016173614A (ja) * | 2016-07-08 | 2016-09-29 | キヤノン株式会社 | 反射型回折素子 |
Also Published As
Publication number | Publication date |
---|---|
EP2466346A1 (en) | 2012-06-20 |
JP5864920B2 (ja) | 2016-02-17 |
EP2667228B1 (en) | 2017-07-19 |
US20120156967A1 (en) | 2012-06-21 |
US10168457B2 (en) | 2019-01-01 |
US9678253B2 (en) | 2017-06-13 |
EP2667228A1 (en) | 2013-11-27 |
EP2466346B1 (en) | 2013-09-11 |
ES2427789T3 (es) | 2013-11-04 |
US20170242166A1 (en) | 2017-08-24 |
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